Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117840) > Сторінка 206 з 1964
| Фото | Назва | Виробник | Інформація |
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CY8C20237-24LKXI | Infineon Technologies |
Description: IC CAPSENCE 8K FLASH 16QFNPackaging: Tray Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Part Status: Active Number of I/O: 14 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20337-24LQXI | Infineon Technologies |
Description: IC CAPSENCE 8K FLASH 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20347S-24LQXI | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 16K 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20437-24LQXI | Infineon Technologies |
Description: IC CAPSENCE 8K FLASH 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 29 DigiKey Programmable: Not Verified |
на замовлення 966 шт: термін постачання 21-31 дні (днів) |
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CY8C20447S-24LQXI | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 16K 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 29 DigiKey Programmable: Not Verified |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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CY8C20467S-24LQXI | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 32K 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 3K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (32kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20636A-24LQXI | Infineon Technologies |
Description: IC CAPSENCE 8K FLASH 48QFNPackaging: Tray Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (6x6) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20637-24LQXI | Infineon Technologies |
Description: IC CAPSENCE 8K FLASH 48QFNPackaging: Tray Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (6x6) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20647-24LQXI | Infineon Technologies |
Description: IC CAPSENCE 16K FLASH 48QFNPackaging: Tray Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (6x6) Number of I/O: 33 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20647S-24LQXI | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 16K 48QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20667S-24LQXI | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 32K 48QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY22388ZXC-11 | Infineon Technologies |
Description: IC CLOCK GEN PROG 16TSSOPPackaging: Tube Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFHM8326TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 25A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V |
на замовлення 3490 шт: термін постачання 21-31 дні (днів) |
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IRFHM8326TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 25A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFS8408-7TRR | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO263-7-900 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFR8403 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFB8409 | Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V |
на замовлення 1986 шт: термін постачання 21-31 дні (днів) |
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CY8C5468AXI-LP106 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x12b; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Active Number of I/O: 62 DigiKey Programmable: Not Verified |
на замовлення 895 шт: термін постачання 21-31 дні (днів) |
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CY8C5667LTI-LP009 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 128KB (128K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 2x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C5866LTI-LP022 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 1x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C5666LTI-LP005 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 2x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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CY8C5866AXI-LP021 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 1x12b; D/A 4x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C5867LTI-LP028 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 128KB (128K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 1x12b; D/A 4x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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CY8C5667LTI-LP041 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 128KB (128K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 2x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
на замовлення 3884 шт: термін постачання 21-31 дні (днів) |
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CY8C5666AXI-LP004 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 2x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Active Number of I/O: 62 DigiKey Programmable: Not Verified |
на замовлення 601 шт: термін постачання 21-31 дні (днів) |
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CY8C5667AXI-LP040 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 128KB (128K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 2x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Active Number of I/O: 62 DigiKey Programmable: Not Verified |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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IR4321MTRPBF | Infineon Technologies |
Description: IC AMP CLASS D MONO 90W 22QFNPackaging: Tape & Reel (TR) Features: Depop, Differential Inputs Package / Case: 22-PowerVQFN Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 100°C (TA) Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm Supplier Device Package: 22-QFN (3x4) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IR4322MTRPBF | Infineon Technologies |
Description: IC AMP CLASS D STEREO 100W 44QFNPackaging: Cut Tape (CT) Features: Depop Package / Case: 44-PowerVFQFN Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 100°C (TA) Voltage - Supply: 46V Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm Supplier Device Package: 44-PQFN (7x7) Part Status: Active |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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IR4321MTRPBF | Infineon Technologies |
Description: IC AMP CLASS D MONO 90W 22QFNPackaging: Cut Tape (CT) Features: Depop, Differential Inputs Package / Case: 22-PowerVQFN Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 100°C (TA) Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm Supplier Device Package: 22-QFN (3x4) |
на замовлення 7995 шт: термін постачання 21-31 дні (днів) |
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IRS44273LTRPBF | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10.2V ~ 20V Input Type: Non-Inverting Supplier Device Package: SOT-23-5 Rise / Fall Time (Typ): 25ns, 25ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 8368 шт: термін постачання 21-31 дні (днів) |
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IRFS4410ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 97A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
на замовлення 11253 шт: термін постачання 21-31 дні (днів) |
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PVN012S-TPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 2.5A 0-20VPackaging: Cut Tape (CT) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 2.5 A Supplier Device Package: 6-SMT Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 100 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: UL |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
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IRFH4201TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 49A 8PQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4210TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 45A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4213DTRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 40A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4213TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 41A 8PQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFHM4226TRPBF | Infineon Technologies |
Description: MOSFET N CH 25V 28A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 50µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4251DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/188A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 63W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PG-TISON-8 Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4201TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 49A 8PQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4210TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 45A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4213TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 41A 8PQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4251DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/188A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 63W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PG-TISON-8 Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4253DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/145A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 50W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 145A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH4253DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/145A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 50W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 145A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs |
на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
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IPD50R1K4CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 3.1A TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD50R3K0CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 1.7A PG-TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD50R1K4CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 3.1A TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD50R3K0CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 1.7A PG-TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP50R190CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 18.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 510µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V |
на замовлення 649 шт: термін постачання 21-31 дні (днів) |
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XMC4504F144F512ABXQMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-18 Number of I/O: 91 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3847MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJUSTABLE 25A PQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3891MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 4A DL PQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPA60R190P6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A TO220-FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µ Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V |
на замовлення 309 шт: термін постачання 21-31 дні (днів) |
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IPA60R600P6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 4.9A TO220-FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD60R600P6 | Infineon Technologies |
Description: MOSFET N-CH 600V 7.3A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP60R600P6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 7.3A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPU50R950CEBKMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.3A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IPW60R190P6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µ Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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BGA 715N7 E6330 | Infineon Technologies |
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGA 715N7 E6330 | Infineon Technologies |
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1 |
товару немає в наявності |
В кошику од. на суму грн. |
| CY8C20237-24LKXI |
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Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8C20337-24LQXI |
![]() |
Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8C20347S-24LQXI |
![]() |
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 16K 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8C20437-24LQXI |
![]() |
Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
на замовлення 966 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 375.72 грн |
| 10+ | 278.19 грн |
| 25+ | 257.33 грн |
| 100+ | 219.97 грн |
| 490+ | 210.70 грн |
| CY8C20447S-24LQXI |
![]() |
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 16K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
на замовлення 270 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 539.66 грн |
| 10+ | 402.22 грн |
| 25+ | 372.90 грн |
| 100+ | 319.70 грн |
| CY8C20467S-24LQXI |
![]() |
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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| CY8C20636A-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| CY8C20637-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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| CY8C20647-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENCE 16K FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 33
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 16K FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 33
DigiKey Programmable: Not Verified
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| CY8C20647S-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 48QFN
Description: IC CAPSENCE SMARTSENCE 16K 48QFN
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| CY8C20667S-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 32K 48QFN
Description: IC CAPSENCE SMARTSENCE 32K 48QFN
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| CY22388ZXC-11 |
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Виробник: Infineon Technologies
Description: IC CLOCK GEN PROG 16TSSOP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN PROG 16TSSOP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IRFHM8326TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
Description: MOSFET N-CH 30V 25A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.14 грн |
| 10+ | 36.48 грн |
| 100+ | 25.25 грн |
| 500+ | 19.80 грн |
| 1000+ | 16.85 грн |
| 2000+ | 15.01 грн |
| IRFHM8326TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
Description: MOSFET N-CH 30V 25A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
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| AUIRFS8408-7TRR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7-900
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7-900
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| AUIRFR8403 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| AUIRFB8409 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 1986 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 676.14 грн |
| 50+ | 389.10 грн |
| CY8C5468AXI-LP106 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 951.46 грн |
| 10+ | 723.01 грн |
| 90+ | 624.99 грн |
| 180+ | 567.46 грн |
| 270+ | 557.90 грн |
| 540+ | 543.89 грн |
| CY8C5667LTI-LP009 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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| CY8C5866LTI-LP022 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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| CY8C5666LTI-LP005 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1022.06 грн |
| 10+ | 781.47 грн |
| 25+ | 730.84 грн |
| 80+ | 670.95 грн |
| CY8C5866AXI-LP021 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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В кошику
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| CY8C5867LTI-LP028 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1382.09 грн |
| 10+ | 1068.88 грн |
| 25+ | 1003.51 грн |
| 100+ | 883.31 грн |
| CY8C5667LTI-LP041 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 3884 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1110.70 грн |
| 10+ | 851.42 грн |
| 25+ | 796.94 грн |
| 100+ | 734.96 грн |
| CY8C5666AXI-LP004 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1042.45 грн |
| 10+ | 797.34 грн |
| 25+ | 745.76 грн |
| 90+ | 685.38 грн |
| CY8C5667AXI-LP040 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1414.25 грн |
| 10+ | 1085.04 грн |
| 25+ | 1015.81 грн |
| IR4321MTRPBF |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 90W 22QFN
Packaging: Tape & Reel (TR)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Supplier Device Package: 22-QFN (3x4)
Description: IC AMP CLASS D MONO 90W 22QFN
Packaging: Tape & Reel (TR)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Supplier Device Package: 22-QFN (3x4)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 136.96 грн |
| IR4322MTRPBF |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D STEREO 100W 44QFN
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 46V
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
Description: IC AMP CLASS D STEREO 100W 44QFN
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 46V
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 427.49 грн |
| 10+ | 314.98 грн |
| 25+ | 290.87 грн |
| 100+ | 248.06 грн |
| 250+ | 236.18 грн |
| 500+ | 229.02 грн |
| 1000+ | 219.47 грн |
| IR4321MTRPBF |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 90W 22QFN
Packaging: Cut Tape (CT)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Supplier Device Package: 22-QFN (3x4)
Description: IC AMP CLASS D MONO 90W 22QFN
Packaging: Cut Tape (CT)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Supplier Device Package: 22-QFN (3x4)
на замовлення 7995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 272.97 грн |
| 10+ | 236.04 грн |
| 25+ | 223.10 грн |
| 100+ | 181.47 грн |
| 250+ | 172.16 грн |
| 500+ | 154.48 грн |
| 1000+ | 128.15 грн |
| IRS44273LTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8368 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.28 грн |
| 10+ | 31.80 грн |
| 25+ | 28.52 грн |
| 100+ | 23.41 грн |
| 250+ | 21.80 грн |
| 500+ | 20.83 грн |
| 1000+ | 19.70 грн |
| IRFS4410ZTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 11253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.61 грн |
| 10+ | 118.44 грн |
| 100+ | 81.54 грн |
| PVN012S-TPBF |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 6-SMT
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 6-SMT
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 103 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 569.47 грн |
| 10+ | 488.85 грн |
| 25+ | 466.80 грн |
| 50+ | 423.06 грн |
| 100+ | 408.54 грн |
| IRFH4201TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 49A 8PQFN
Description: MOSFET N-CH 25V 49A 8PQFN
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од. на суму грн.
| IRFH4210TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
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| IRFH4213DTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 13 V
Description: MOSFET N-CH 25V 40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 13 V
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од. на суму грн.
| IRFH4213TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A 8PQFN
Description: MOSFET N-CH 25V 41A 8PQFN
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В кошику
од. на суму грн.
| IRFHM4226TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 25V 28A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
Description: MOSFET N CH 25V 28A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
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| IRFH4251DTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 63W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PG-TISON-8
Part Status: Last Time Buy
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 63W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PG-TISON-8
Part Status: Last Time Buy
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| IRFH4201TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 49A 8PQFN
Description: MOSFET N-CH 25V 49A 8PQFN
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| IRFH4210TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
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| IRFH4213TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A 8PQFN
Description: MOSFET N-CH 25V 41A 8PQFN
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| IRFH4251DTRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 63W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PG-TISON-8
Part Status: Last Time Buy
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 63W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PG-TISON-8
Part Status: Last Time Buy
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| IRFH4253DTRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
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| IRFH4253DTRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.89 грн |
| 10+ | 148.58 грн |
| 100+ | 103.09 грн |
| 500+ | 78.50 грн |
| 1000+ | 74.67 грн |
| IPD50R1K4CEBTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Description: MOSFET N-CH 500V 3.1A TO252-3
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| IPD50R3K0CEBTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A PG-TO-252
Description: MOSFET N-CH 500V 1.7A PG-TO-252
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| IPD50R1K4CEBTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Description: MOSFET N-CH 500V 3.1A TO252-3
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| IPD50R3K0CEBTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A PG-TO-252
Description: MOSFET N-CH 500V 1.7A PG-TO-252
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| IPP50R190CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Description: MOSFET N-CH 500V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
на замовлення 649 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.78 грн |
| 50+ | 81.49 грн |
| 100+ | 73.29 грн |
| 500+ | 55.29 грн |
| XMC4504F144F512ABXQMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
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| IR3847MTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 25A PQFN
Description: IC REG BUCK ADJUSTABLE 25A PQFN
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| IR3891MTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 4A DL PQFN
Description: IC REG BUCK ADJ 4A DL PQFN
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| IPA60R190P6XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 309 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 198.45 грн |
| 50+ | 94.72 грн |
| 100+ | 85.38 грн |
| IPA60R600P6XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Description: MOSFET N-CH 600V 4.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
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| IPD60R600P6 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
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| IPP60R600P6XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
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| IPU50R950CEBKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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| IPW60R190P6FKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 255.71 грн |
| 30+ | 135.05 грн |
| 120+ | 110.51 грн |
| BGA 715N7 E6330 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику
од. на суму грн.
| BGA 715N7 E6330 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику
од. на суму грн.






























