Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124748) > Сторінка 212 з 2080
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRF8736M2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 27A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric M4 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DirectFET™ Isometric M4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AUIRFP4568 | Infineon Technologies |
Description: MOSFET N-CH 150V 171A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||
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AUIRFS8407-7P | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAK-7Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.9V @ 150µA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRAC27951SR | Infineon Technologies |
Description: EVAL BOARD FOR IR11682 IRS27951Contents: Board(s) Packaging: Box Power - Output: 240W Part Status: Active Outputs and Type: 1 Isolated Output Main Purpose: AC/DC, Primary and Secondary Side Supplied Contents: Board(s) Utilized IC / Part: IR11682, IRS27951 Board Type: Fully Populated Regulator Topology: Flyback Current - Output: 10A Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V Voltage - Output: 24V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IRAM256-1567A2 | Infineon Technologies |
Description: IC MOD PWR HY 600V 15A 29PWRSSIPVoltage: 600 V Current: 15 A Voltage - Isolation: 2000Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IRAM630-1562F2 | Infineon Technologies |
Description: IC MOD PWR HYBRID 600V 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IRAMS10UP60B-S | Infineon Technologies |
Description: IC MOD PWR HYBRID 600V 10APackaging: Tube Part Status: Obsolete Mounting Type: Through Hole Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IRAMS10UP60B-W | Infineon Technologies |
Description: IC MOD PWR HYBRID 600V 10APart Status: Obsolete Mounting Type: Through Hole Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IRAMT20TP60A | Infineon Technologies |
Description: IC MOD PWR HYBRID 600V 20AMounting Type: Through Hole Package / Case: Module Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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IRFB7740PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 87A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRFH8201TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 49A/100A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IRFH8202TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 47A/100A 8PQFNVgs(th) (Max) @ Id: 2.35V @ 150µA Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRFH8303TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 43A/100A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 150µA Power Dissipation (Max): 3.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||
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IRFH8307TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 42A/100A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.35V @ 150µA Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRFS7430TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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IRFS7730TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 75V 240A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 13970 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 428 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IRFS7730TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263AB (D2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IRFS7734TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 75V 197A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 197A (Tc) Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRFS7734TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 183A D2PAKTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||
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IRFS7787TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 76A D2PAKMounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.7V @ 100µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRFSL7540PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 110A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||
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IRG7PH28UEF | Infineon Technologies |
Description: IGBT 1200V 15A TO247Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGB4620DPBF | Infineon Technologies |
Description: IGBT 600V 32A 140W TO220Power - Max: 140 W Current - Collector Pulsed (Icm): 36 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 32 A Part Status: Obsolete Gate Charge: 25 nC Test Condition: 400V, 12A, 22Ohm, 15V Switching Energy: 75µJ (on), 225µJ (off) Td (on/off) @ 25°C: 31ns/83ns Supplier Device Package: TO-220AC Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Reverse Recovery Time (trr): 68 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGR4607DPBF | Infineon Technologies |
Description: IGBT 600V 11A TO-252AAPower - Max: 58 W Current - Collector Pulsed (Icm): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 11 A Gate Charge: 9 nC Test Condition: 400V, 4A, 100Ohm, 15V Switching Energy: 140µJ (on), 62µJ (off) Td (on/off) @ 25°C: 27ns/120ns Supplier Device Package: TO-252AA (DPAK) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Reverse Recovery Time (trr): 48 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGR4607DTRLPBF | Infineon Technologies |
Description: IGBT 600V 11A 58W DPAKPower - Max: 58 W Current - Collector Pulsed (Icm): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 11 A Gate Charge: 9 nC Test Condition: 400V, 4A, 100Ohm, 15V Switching Energy: 140µJ (on), 62µJ (off) Td (on/off) @ 25°C: 27ns/120ns Supplier Device Package: D-Pak Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Reverse Recovery Time (trr): 48 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGR4607DTRPBF | Infineon Technologies |
Description: IGBT 600V 11A 58W DPAKPower - Max: 58 W Current - Collector Pulsed (Icm): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 11 A Gate Charge: 9 nC Test Condition: 400V, 1.5A, 100Ohm, 15V Switching Energy: 140µJ (on), 62µJ (off) Td (on/off) @ 25°C: 27ns/120ns Supplier Device Package: PG-TO252-3 Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Reverse Recovery Time (trr): 48 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGR4607DTRRPBF | Infineon Technologies |
Description: IGBT 600V 11A 58W DPAKPower - Max: 58 W Current - Collector Pulsed (Icm): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 11 A Part Status: Obsolete Gate Charge: 9 nC Test Condition: 400V, 4A, 100Ohm, 15V Switching Energy: 140µJ (on), 62µJ (off) Td (on/off) @ 25°C: 27ns/120ns Supplier Device Package: D-Pak Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Reverse Recovery Time (trr): 48 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGR4610DTRLPBF | Infineon Technologies |
Description: IGBT 600V 16A TO252AAVce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Reverse Recovery Time (trr): 74 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 77 W Current - Collector Pulsed (Icm): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 16 A Gate Charge: 13 nC Test Condition: 400V, 6A, 47Ohm, 15V Switching Energy: 56µJ (on), 122µJ (off) Td (on/off) @ 25°C: 27ns/75ns Supplier Device Package: TO-252AA (DPAK) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGR4610DTRRPBF | Infineon Technologies |
Description: IGBT 600V 16A TO252AAPower - Max: 77 W Current - Collector Pulsed (Icm): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 16 A Gate Charge: 13 nC Test Condition: 400V, 6A, 47Ohm, 15V Switching Energy: 56µJ (on), 122µJ (off) Td (on/off) @ 25°C: 27ns/75ns Supplier Device Package: TO-252AA (DPAK) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Reverse Recovery Time (trr): 74 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGS4607DTRRPBF | Infineon Technologies |
Description: IGBT 600V 11A 58W D2PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||
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IRGS4610DTRLPBF | Infineon Technologies |
Description: IGBT 600V 16A 77W D2PAKVce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Reverse Recovery Time (trr): 74 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Power - Max: 77 W Current - Collector Pulsed (Icm): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 16 A Gate Charge: 13 nC Test Condition: 400V, 6A, 47Ohm, 15V Switching Energy: 56µJ (on), 122µJ (off) Td (on/off) @ 25°C: 27ns/75ns Supplier Device Package: D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGS4610DTRRPBF | Infineon Technologies |
Description: IGBT 600V 16A 77W D2PAKPower - Max: 77 W Current - Collector Pulsed (Icm): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 16 A Gate Charge: 13 nC Test Condition: 400V, 6A, 47Ohm, 15V Switching Energy: 56µJ (on), 122µJ (off) Td (on/off) @ 25°C: 27ns/75ns Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Reverse Recovery Time (trr): 74 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IRGS4615DTRLPBF | Infineon Technologies |
Description: IGBT 600V 23A 99W D2PAKVoltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 23 A Gate Charge: 19 nC Test Condition: 400V, 8A, 47Ohm, 15V Switching Energy: 70µJ (on), 145µJ (off) Td (on/off) @ 25°C: 30ns/95ns Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Reverse Recovery Time (trr): 60 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Power - Max: 99 W Current - Collector Pulsed (Icm): 24 A |
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IRGS4620DTRLPBF | Infineon Technologies |
Description: IGBT 600V 32A 140W D2PAKPower - Max: 140 W Current - Collector Pulsed (Icm): 36 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 32 A Part Status: Obsolete Gate Charge: 25 nC Test Condition: 400V, 12A, 22Ohm, 15V Switching Energy: 75µJ (on), 225µJ (off) Td (on/off) @ 25°C: 31ns/83ns Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Reverse Recovery Time (trr): 68 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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IRGS4620DTRRPBF | Infineon Technologies |
Description: IGBT 600V 32A 140W D2PAKPower - Max: 140 W Current - Collector Pulsed (Icm): 36 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 32 A Gate Charge: 25 nC Test Condition: 400V, 12A, 22Ohm, 15V Switching Energy: 75µJ (on), 225µJ (off) Td (on/off) @ 25°C: 31ns/83ns Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Reverse Recovery Time (trr): 68 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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IRGS4630DPBF | Infineon Technologies |
Description: IGBT 600V 47A 206W D2PAKPower - Max: 206 W Current - Collector Pulsed (Icm): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 47 A Gate Charge: 35 nC Test Condition: 400V, 18A, 22Ohm, 15V Switching Energy: 95µJ (on), 350µJ (off) Td (on/off) @ 25°C: 40ns/105ns Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Reverse Recovery Time (trr): 100 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
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IRGS4630DTRLPBF | Infineon Technologies |
Description: IGBT 600V 47A 206W D2PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||
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IRGS4630DTRRPBF | Infineon Technologies |
Description: IGBT 600V 47A 206W D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 40ns/105ns Switching Energy: 95µJ (on), 350µJ (off) Test Condition: 400V, 18A, 22Ohm, 15V Gate Charge: 35 nC Current - Collector (Ic) (Max): 47 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 54 A Power - Max: 206 W |
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IRLS3813TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 160A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263AB) Vgs(th) (Max) @ Id: 2.35V @ 150µA Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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IRMCF143TR | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 64LQFPMotor Type - AC, DC: AC, Servo Supplier Device Package: 64-LQFP (10x10) Technology: IGBT Applications: General Purpose Voltage - Supply: 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||
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IRMCF171TR | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 48LQFPPart Status: Not For New Designs Motor Type - AC, DC: AC, Induction, Synchronous Supplier Device Package: 48-LQFP (7x7) Technology: Power MOSFET Applications: Appliance Voltage - Supply: 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||
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IRMCF171TY | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 48LQFPTechnology: Power MOSFET Applications: Appliance Voltage - Supply: 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray Part Status: Not For New Designs Motor Type - AC, DC: AC, Induction, Synchronous Supplier Device Package: 48-LQFP (7x7) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
| IRMCF188TR | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 64LQFPMotor Type - AC, DC: AC, Induction, Synchronous Supplier Device Package: 64-LQFP (12x12) Technology: IGBT Applications: General Purpose Voltage - Supply: 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) |
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IRMCK172M | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 48QFN |
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| IRMCK172MTR | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 48QFNMotor Type - AC, DC: AC, Induction, Synchronous Supplier Device Package: 48-QFN (7x7) Technology: Power MOSFET Applications: Appliance Voltage - Supply: 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||
| IRMCK182M | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ |
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В кошику од. на суму грн. | |||||||
| IRMCK182MTR | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ |
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| IRPLLED13 | Infineon Technologies |
Description: EVAL BOARD FOR IRS2980Outputs and Type: 1 Non-Isolated Output Utilized IC / Part: IRS2980 Current - Output / Channel: 350mA Contents: Board(s) Voltage - Input: 90 ~ 250 VAC Packaging: Box |
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В кошику од. на суму грн. | |||||||
| IRPLLED5 | Infineon Technologies |
Description: EVAL BOARD FOR IRS2548DContents: Board(s) Outputs and Type: 1 Isolated Output Supplied Contents: Board(s) Utilized IC / Part: IRS2548D Current - Output / Channel: 1.4A Voltage - Input: 90 ~ 305 VAC Features: Dimmable Packaging: Box |
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IRS20965STRPBF | Infineon Technologies |
Description: IC AMP CLASS D MONO 16SOICOperating Temperature: -40°C ~ 125°C (TA) Type: Class D Mounting Type: Surface Mount Output Type: 1-Channel (Mono) Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Not For New Designs Supplier Device Package: 16-SOIC Voltage - Supply: 10V ~ 15V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
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IRFS7434TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V |
на замовлення 13600 шт: термін постачання 21-31 дні (днів) |
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MB39A138PFT-G-JN-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 24TSSOPPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Topology: Buck Voltage - Supply (Vcc/Vdd): 6V ~ 24V Supplier Device Package: 24-TSSOP Synchronous Rectifier: Yes Control Features: Current Limit, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 2 |
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В кошику од. на суму грн. | ||||||
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MB90F342CASPFR-GS | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 24x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 82 DigiKey Programmable: Not Verified |
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MB90F342CESPQC-GSE2 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 24x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 82 DigiKey Programmable: Not Verified |
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CY90F387PMT-GSE1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASH 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, SCI, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 34 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MB91F366GBPMC3-G | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 120LQFP DigiKey Programmable: Not Verified Number of I/O: 80 Supplier Device Package: 120-LQFP (16x16) Peripherals: DMA, POR, PWM, WDT Connectivity: CANbus, I²C, Serial I/O, UART/USART Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V Core Size: 32-Bit Single-Core Data Converters: A/D 8x10b; D/A 2x10b Core Processor: FR50 RISC Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 36K x 8 Program Memory Size: 512KB (512K x 8) Speed: 64MHz Mounting Type: Surface Mount Package / Case: 120-LQFP Packaging: Tray |
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MB95F212KPF-G-SNE2 | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 8SOPPackaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 4KB (4K x 8) RAM Size: 240 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 2x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 8-SOP Number of I/O: 5 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||
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MB95F316EPMC-G-SNE2 | Infineon Technologies |
Description: IC MCU 8BIT 36KB FLASH 80LQFPDigiKey Programmable: Not Verified Number of I/O: 71 Supplier Device Package: 80-LQFP (12x12) Peripherals: LCD, LVD, POR, PWM, WDT Connectivity: I2C, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Core Size: 8-Bit Data Converters: A/D 4x8/10b Core Processor: F²MC-8FX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1008 x 8 Program Memory Size: 36KB (36K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray |
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В кошику од. на суму грн. | ||||||
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MB96F326RSBPMC-GSE2 | Infineon Technologies |
Description: IC MCU 16BIT 288KB FLASH 80LQFPRAM Size: 12K x 8 Program Memory Size: 288KB (288K x 8) Speed: 56MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 66 Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, LVR, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 18x10b Core Processor: F²MC-16FX Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) |
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MB96F347RSBPMC-GSE2 | Infineon Technologies |
Description: IC MCU 16BIT 416KB FLASH 100QFPDigiKey Programmable: Not Verified Number of I/O: 82 Supplier Device Package: 100-QFP (14x20) Peripherals: DMA, LVD, LVR, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 24x10b Core Processor: F²MC-16FX Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 416KB (416K x 8) Speed: 56MHz Mounting Type: Surface Mount Package / Case: 100-BQFP Packaging: Tray |
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| AUIRF8736M2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| AUIRFP4568 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| AUIRFS8407-7P |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Description: MOSFET N-CH 40V 240A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
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| IRAC27951SR |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR11682 IRS27951
Contents: Board(s)
Packaging: Box
Power - Output: 240W
Part Status: Active
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Supplied Contents: Board(s)
Utilized IC / Part: IR11682, IRS27951
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 10A
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Voltage - Output: 24V
Description: EVAL BOARD FOR IR11682 IRS27951
Contents: Board(s)
Packaging: Box
Power - Output: 240W
Part Status: Active
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Supplied Contents: Board(s)
Utilized IC / Part: IR11682, IRS27951
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 10A
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Voltage - Output: 24V
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| IRAM256-1567A2 |
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Виробник: Infineon Technologies
Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Packaging: Tube
Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Packaging: Tube
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| IRAM630-1562F2 |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 15A
Description: IC MOD PWR HYBRID 600V 15A
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| IRAMS10UP60B-S |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
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| IRAMS10UP60B-W |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Packaging: Tube
Description: IC MOD PWR HYBRID 600V 10A
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Packaging: Tube
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| IRAMT20TP60A |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 20A
Mounting Type: Through Hole
Package / Case: Module
Packaging: Tube
Description: IC MOD PWR HYBRID 600V 20A
Mounting Type: Through Hole
Package / Case: Module
Packaging: Tube
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| IRFB7740PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
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| IRFH8201TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 41.31 грн |
| IRFH8202TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
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| IRFH8303TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 43A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 43A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| IRFH8307TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 42A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 42A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| IRFS7430TRL7PP |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 145.03 грн |
| 1600+ | 131.11 грн |
| 2400+ | 129.28 грн |
| IRFS7730TRL7PP |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 428 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 75V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 428 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 118.95 грн |
| 1600+ | 107.20 грн |
| IRFS7730TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 96.77 грн |
| IRFS7734TRL7PP |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 197A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V
Description: MOSFET N-CH 75V 197A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V
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| IRFS7734TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 183A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 75V 183A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| IRFS7787TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 76A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 75V 76A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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| IRFSL7540PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Description: MOSFET N-CH 60V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
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| IRG7PH28UEF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 1200V 15A TO247
Part Status: Obsolete
Packaging: Bulk
Description: IGBT 1200V 15A TO247
Part Status: Obsolete
Packaging: Bulk
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| IRGB4620DPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W TO220
Power - Max: 140 W
Current - Collector Pulsed (Icm): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 32 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
Supplier Device Package: TO-220AC
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: IGBT 600V 32A 140W TO220
Power - Max: 140 W
Current - Collector Pulsed (Icm): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 32 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
Supplier Device Package: TO-220AC
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| IRGR4607DPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 11A TO-252AA
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 9 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: IGBT 600V 11A TO-252AA
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 9 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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| IRGR4607DTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W DPAK
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 9 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IGBT 600V 11A 58W DPAK
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 9 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IRGR4607DTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W DPAK
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 9 nC
Test Condition: 400V, 1.5A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: PG-TO252-3
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IGBT 600V 11A 58W DPAK
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 9 nC
Test Condition: 400V, 1.5A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: PG-TO252-3
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IRGR4607DTRRPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W DPAK
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Part Status: Obsolete
Gate Charge: 9 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IGBT 600V 11A 58W DPAK
Power - Max: 58 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11 A
Part Status: Obsolete
Gate Charge: 9 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 140µJ (on), 62µJ (off)
Td (on/off) @ 25°C: 27ns/120ns
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IRGR4610DTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 16A TO252AA
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: TO-252AA (DPAK)
Description: IGBT 600V 16A TO252AA
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: TO-252AA (DPAK)
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| IRGR4610DTRRPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 16A TO252AA
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IGBT 600V 16A TO252AA
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: TO-252AA (DPAK)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IRGS4607DTRRPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Description: IGBT 600V 11A 58W D2PAK
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Мінімальне замовлення: 800 шт
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| IRGS4610DTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 16A 77W D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: D2PAK
Description: IGBT 600V 16A 77W D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: D2PAK
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| IRGS4610DTRRPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 16A 77W D2PAK
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT 600V 16A 77W D2PAK
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| IRGS4615DTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Gate Charge: 19 nC
Test Condition: 400V, 8A, 47Ohm, 15V
Switching Energy: 70µJ (on), 145µJ (off)
Td (on/off) @ 25°C: 30ns/95ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 99 W
Current - Collector Pulsed (Icm): 24 A
Description: IGBT 600V 23A 99W D2PAK
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Gate Charge: 19 nC
Test Condition: 400V, 8A, 47Ohm, 15V
Switching Energy: 70µJ (on), 145µJ (off)
Td (on/off) @ 25°C: 30ns/95ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 99 W
Current - Collector Pulsed (Icm): 24 A
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| IRGS4620DTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W D2PAK
Power - Max: 140 W
Current - Collector Pulsed (Icm): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 32 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT 600V 32A 140W D2PAK
Power - Max: 140 W
Current - Collector Pulsed (Icm): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 32 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| IRGS4620DTRRPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W D2PAK
Power - Max: 140 W
Current - Collector Pulsed (Icm): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 32 A
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT 600V 32A 140W D2PAK
Power - Max: 140 W
Current - Collector Pulsed (Icm): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 32 A
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| IRGS4630DPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 47A 206W D2PAK
Power - Max: 206 W
Current - Collector Pulsed (Icm): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 47 A
Gate Charge: 35 nC
Test Condition: 400V, 18A, 22Ohm, 15V
Switching Energy: 95µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: IGBT 600V 47A 206W D2PAK
Power - Max: 206 W
Current - Collector Pulsed (Icm): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 47 A
Gate Charge: 35 nC
Test Condition: 400V, 18A, 22Ohm, 15V
Switching Energy: 95µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| IRGS4630DTRLPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 47A 206W D2PAK
Description: IGBT 600V 47A 206W D2PAK
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| IRGS4630DTRRPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 47A 206W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
Description: IGBT 600V 47A 206W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
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| IRLS3813TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263AB)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263AB)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| IRMCF143TR |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Motor Type - AC, DC: AC, Servo
Supplier Device Package: 64-LQFP (10x10)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Motor Type - AC, DC: AC, Servo
Supplier Device Package: 64-LQFP (10x10)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
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| IRMCF171TR |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Part Status: Not For New Designs
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 48-LQFP (7x7)
Technology: Power MOSFET
Applications: Appliance
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Part Status: Not For New Designs
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 48-LQFP (7x7)
Technology: Power MOSFET
Applications: Appliance
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2000 шт
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| IRMCF171TY |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Technology: Power MOSFET
Applications: Appliance
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Part Status: Not For New Designs
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 48-LQFP (7x7)
Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Technology: Power MOSFET
Applications: Appliance
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Part Status: Not For New Designs
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 48-LQFP (7x7)
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| IRMCF188TR |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 64-LQFP (12x12)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 64-LQFP (12x12)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
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| IRMCK172M |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48QFN
Description: IC MOTOR DRIVER 3V-3.6V 48QFN
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| IRMCK172MTR |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48QFN
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 48-QFN (7x7)
Technology: Power MOSFET
Applications: Appliance
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 3V-3.6V 48QFN
Motor Type - AC, DC: AC, Induction, Synchronous
Supplier Device Package: 48-QFN (7x7)
Technology: Power MOSFET
Applications: Appliance
Voltage - Supply: 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| IRMCK182M |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
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| IRMCK182MTR |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
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| IRPLLED13 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2980
Outputs and Type: 1 Non-Isolated Output
Utilized IC / Part: IRS2980
Current - Output / Channel: 350mA
Contents: Board(s)
Voltage - Input: 90 ~ 250 VAC
Packaging: Box
Description: EVAL BOARD FOR IRS2980
Outputs and Type: 1 Non-Isolated Output
Utilized IC / Part: IRS2980
Current - Output / Channel: 350mA
Contents: Board(s)
Voltage - Input: 90 ~ 250 VAC
Packaging: Box
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| IRPLLED5 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2548D
Contents: Board(s)
Outputs and Type: 1 Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: IRS2548D
Current - Output / Channel: 1.4A
Voltage - Input: 90 ~ 305 VAC
Features: Dimmable
Packaging: Box
Description: EVAL BOARD FOR IRS2548D
Contents: Board(s)
Outputs and Type: 1 Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: IRS2548D
Current - Output / Channel: 1.4A
Voltage - Input: 90 ~ 305 VAC
Features: Dimmable
Packaging: Box
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| IRS20965STRPBF |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: 16-SOIC
Voltage - Supply: 10V ~ 15V
Description: IC AMP CLASS D MONO 16SOIC
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: 16-SOIC
Voltage - Supply: 10V ~ 15V
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Мінімальне замовлення: 2500 шт
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| IRFS7434TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 13600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 79.59 грн |
| MB39A138PFT-G-JN-ERE1 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Topology: Buck
Voltage - Supply (Vcc/Vdd): 6V ~ 24V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Topology: Buck
Voltage - Supply (Vcc/Vdd): 6V ~ 24V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
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| MB90F342CASPFR-GS |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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| MB90F342CESPQC-GSE2 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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| CY90F387PMT-GSE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
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| MB91F366GBPMC3-G |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x10b; D/A 2x10b
Core Processor: FR50 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 36K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
Description: IC MCU 32BIT 512KB FLASH 120LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, I²C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.25V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x10b; D/A 2x10b
Core Processor: FR50 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 36K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
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| MB95F212KPF-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8SOP
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 8SOP
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
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| MB95F316EPMC-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 71
Supplier Device Package: 80-LQFP (12x12)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 4x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1008 x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Description: IC MCU 8BIT 36KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 71
Supplier Device Package: 80-LQFP (12x12)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 4x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1008 x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
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| MB96F326RSBPMC-GSE2 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 288KB FLASH 80LQFP
RAM Size: 12K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 56MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 18x10b
Core Processor: F²MC-16FX
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Description: IC MCU 16BIT 288KB FLASH 80LQFP
RAM Size: 12K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 56MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 66
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 18x10b
Core Processor: F²MC-16FX
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
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| MB96F347RSBPMC-GSE2 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 416KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 82
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Core Processor: F²MC-16FX
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 56MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Description: IC MCU 16BIT 416KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 82
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Core Processor: F²MC-16FX
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 56MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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