Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129564) > Сторінка 208 з 2160

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
BGT24MTR11E6327XUMA1 BGT24MTR11E6327XUMA1 Infineon Technologies BGT24MTR11_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139def491930214 Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 Infineon Technologies BGT24MTR12_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df108e75025b Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
на замовлення 1991 шт:
термін постачання 21-31 дні (днів)
1+1283.50 грн
10+980.84 грн
25+917.19 грн
100+795.10 грн
250+763.80 грн
500+744.94 грн
В кошику  од. на суму  грн.
BFR720L3RHE6327XTSA1 BFR720L3RHE6327XTSA1 Infineon Technologies Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740 Description: TRANS RF NPN 4V 20MA TSLP-3
товару немає в наявності
В кошику  од. на суму  грн.
BGSF18DM20E6727XUMA1 BGSF18DM20E6727XUMA1 Infineon Technologies BGSF18DM20.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f2e70c5013f334cfa28119c Description: IC SWITCH SP8T HP SPI 20SMD
товару немає в наявності
В кошику  од. на суму  грн.
BAR6402ELE6327XTMA1 BAR6402ELE6327XTMA1 Infineon Technologies Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6402ELE6327XTMA1 BAR6402ELE6327XTMA1 Infineon Technologies Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR9002ELE6327XTMA1 BAR9002ELE6327XTMA1 Infineon Technologies Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 13500 шт
В кошику  од. на суму  грн.
SPP04N60C3XKSA1 SPP04N60C3XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY7C65213-28PVXI CY7C65213-28PVXI Infineon Technologies CYPR-S-A0004572493-1.pdf?t.download=true&u=5oefqw Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12281 шт:
термін постачання 21-31 дні (днів)
1+319.09 грн
10+232.63 грн
47+203.64 грн
141+177.83 грн
282+171.33 грн
517+166.59 грн
1034+159.42 грн
2538+154.81 грн
В кошику  од. на суму  грн.
BTN8982TAAUMA1 BTN8982TAAUMA1 Infineon Technologies BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+278.41 грн
2000+262.37 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTN8962TAAUMA1 BTN8962TAAUMA1 Infineon Technologies BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+253.40 грн
2000+238.73 грн
3000+236.08 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTN8982TAAUMA1 BTN8982TAAUMA1 Infineon Technologies BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+479.04 грн
10+353.63 грн
25+326.92 грн
100+279.21 грн
250+269.42 грн
В кошику  од. на суму  грн.
BTN8962TAAUMA1 BTN8962TAAUMA1 Infineon Technologies BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 6375 шт:
термін постачання 21-31 дні (днів)
1+437.86 грн
10+323.06 грн
25+298.37 грн
100+254.51 грн
250+244.71 грн
В кошику  од. на суму  грн.
IRFB7537PBF IRFB7537PBF Infineon Technologies infineon-data-sheet-irfs7537pbf-datasheet-en.pdf Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
2+214.58 грн
10+133.51 грн
50+102.06 грн
100+86.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFB7540PBF IRFB7540PBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
3+140.94 грн
50+65.24 грн
100+58.41 грн
500+43.57 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFB7546PBF IRFB7546PBF Infineon Technologies irfb7546pbf.pdf?fileId=5546d462533600a401535619ea0e1e68 Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFP7530PBF IRFP7530PBF Infineon Technologies irfp7530pbf.pdf?fileId=5546d462533600a40153562caf372027 Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)
1+380.85 грн
25+211.30 грн
100+174.10 грн
500+135.44 грн
1000+126.47 грн
В кошику  од. на суму  грн.
IRFP7537PBF IRFP7537PBF Infineon Technologies irfp7537pbf.pdf?fileId=5546d462533600a40153562cb6662029 Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7530-7PPBF IRFS7530-7PPBF Infineon Technologies irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8 Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7530PBF IRFS7530PBF Infineon Technologies irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3 Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7534-7PPBF IRFS7534-7PPBF Infineon Technologies irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7534PBF IRFS7534PBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7530TRL7PP IRFS7530TRL7PP Infineon Technologies irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8 Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+159.25 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7530TRLPBF IRFS7530TRLPBF Infineon Technologies irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3 Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+131.57 грн
2400+115.61 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7537TRLPBF IRFS7537TRLPBF Infineon Technologies irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+84.05 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7540TRLPBF IRFS7540TRLPBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
XMC1302T016X0032AAXUMA1 XMC1302T016X0032AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BSP318SH6327XTSA1 BSP318SH6327XTSA1 Infineon Technologies BSP318S.pdf Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
6ED003L02F2XUMA1 6ED003L02F2XUMA1 Infineon Technologies Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190 Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+106.48 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+113.34 грн
6000+107.06 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BSC022N04LSATMA1 BSC022N04LSATMA1 Infineon Technologies BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9 Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
6ED003L02F2XUMA1 6ED003L02F2XUMA1 Infineon Technologies Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190 Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9796 шт:
термін постачання 21-31 дні (днів)
2+203.49 грн
10+146.24 грн
25+133.83 грн
100+112.79 грн
250+106.68 грн
500+104.57 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)
2+216.16 грн
10+155.62 грн
25+142.43 грн
100+120.04 грн
250+113.54 грн
500+111.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BSC022N04LSATMA1 BSC022N04LSATMA1 Infineon Technologies BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9 Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BGA715N7E6327XTSA2 BGA715N7E6327XTSA2 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+55.54 грн
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
BGA715N7E6327XTSA2 BGA715N7E6327XTSA2 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
на замовлення 12207 шт:
термін постачання 21-31 дні (днів)
4+96.60 грн
10+79.53 грн
25+75.00 грн
100+64.56 грн
250+61.05 грн
500+58.58 грн
1000+55.32 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
AUIRF8736M2TR AUIRF8736M2TR Infineon Technologies auirf8736m2.pdf?fileId=5546d462533600a4015355b0dade1414 Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFP4568 AUIRFP4568 Infineon Technologies auirfp4568.pdf?fileId=5546d462533600a4015355b1d8751458 Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
AUIRFS8407-7P AUIRFS8407-7P Infineon Technologies auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5 Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRAC27951SR IRAC27951SR Infineon Technologies irac27951sr-240w.pdf?fileId=5546d462533600a4015356971f172bd7 Description: EVAL BOARD FOR IR11682 IRS27951
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11682, IRS27951
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
товару немає в наявності
В кошику  од. на суму  грн.
IRAM256-1567A2 Infineon Technologies IRAM256-1567A.pdf Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
IRAM630-1562F2 Infineon Technologies IRAM630-1562F.pdf Description: IC MOD PWR HYBRID 600V 15A
товару немає в наявності
В кошику  од. на суму  грн.
IRAMS10UP60B-S Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRAMS10UP60B-W Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRAMT20TP60A Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOD PWR HYBRID 600V 20A
Packaging: Tube
Package / Case: Module
Mounting Type: Through Hole
товару немає в наявності
В кошику  од. на суму  грн.
IRFB7740PBF IRFB7740PBF Infineon Technologies IRSD-S-A0000576246-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8201TRPBF IRFH8201TRPBF Infineon Technologies irfh8201pbf.pdf?fileId=5546d462533600a40153561f75651f0a Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+42.21 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFH8202TRPBF IRFH8202TRPBF Infineon Technologies irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8303TRPBF IRFH8303TRPBF Infineon Technologies irfh8303pbf.pdf?fileId=5546d462533600a40153561f84a41f0e Description: MOSFET N-CH 30V 43A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 24 V
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFH8307TRPBF IRFH8307TRPBF Infineon Technologies irfh8307pbf.pdf?fileId=5546d462533600a40153561f8baa1f10 Description: MOSFET N-CH 30V 42A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7430TRL7PP IRFS7430TRL7PP Infineon Technologies infineon-irfs7430-7p-datasheet-en.pdf Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+150.08 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7730TRL7PP IRFS7730TRL7PP Infineon Technologies infineon-irfs7730-7p-datasheet-en.pdf Description: MOSFET N-CH 75V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 428 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13970 pF @ 25 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+134.82 грн
2400+117.36 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7730TRLPBF IRFS7730TRLPBF Infineon Technologies irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7734TRL7PP IRFS7734TRL7PP Infineon Technologies irfs7734-7ppbf.pdf?fileId=5546d462533600a40153563ac71b21e6 Description: MOSFET N-CH 75V 197A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7734TRLPBF IRFS7734TRLPBF Infineon Technologies irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2 Description: MOSFET N-CH 75V 183A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7787TRLPBF IRFS7787TRLPBF Infineon Technologies irfs7787pbf.pdf?fileId=5546d462533600a40153563ad73d21eb Description: MOSFET N-CH 75V 76A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFSL7540PBF IRFSL7540PBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRG7PH28UEF IRG7PH28UEF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 1200V 15A TO247
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRGB4620DPBF IRGB4620DPBF Infineon Technologies IRGx4620D(-E)PbF.pdf Description: IGBT 600V 32A 140W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
товару немає в наявності
В кошику  од. на суму  грн.
IRGR4607DPBF IRGR4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
товару немає в наявності
В кошику  од. на суму  грн.
BGT24MTR11E6327XUMA1 BGT24MTR11_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139def491930214
BGT24MTR11E6327XUMA1
Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BGT24MTR12E6327XUMA1 BGT24MTR12_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df108e75025b
BGT24MTR12E6327XUMA1
Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
на замовлення 1991 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1283.50 грн
10+980.84 грн
25+917.19 грн
100+795.10 грн
250+763.80 грн
500+744.94 грн
В кошику  од. на суму  грн.
BFR720L3RHE6327XTSA1 Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740
BFR720L3RHE6327XTSA1
Виробник: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
товару немає в наявності
В кошику  од. на суму  грн.
BGSF18DM20E6727XUMA1 BGSF18DM20.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f2e70c5013f334cfa28119c
BGSF18DM20E6727XUMA1
Виробник: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
товару немає в наявності
В кошику  од. на суму  грн.
BAR6402ELE6327XTMA1 Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa
BAR6402ELE6327XTMA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6402ELE6327XTMA1 Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa
BAR6402ELE6327XTMA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR9002ELE6327XTMA1 Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e
BAR9002ELE6327XTMA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 13500 шт
В кошику  од. на суму  грн.
SPP04N60C3XKSA1 fundamentals-of-power-semiconductors
SPP04N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY7C65213-28PVXI CYPR-S-A0004572493-1.pdf?t.download=true&u=5oefqw
CY7C65213-28PVXI
Виробник: Infineon Technologies
Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12281 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+319.09 грн
10+232.63 грн
47+203.64 грн
141+177.83 грн
282+171.33 грн
517+166.59 грн
1034+159.42 грн
2538+154.81 грн
В кошику  од. на суму  грн.
BTN8982TAAUMA1 BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t
BTN8982TAAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+278.41 грн
2000+262.37 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTN8962TAAUMA1 BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t
BTN8962TAAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+253.40 грн
2000+238.73 грн
3000+236.08 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BTN8982TAAUMA1 BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t
BTN8982TAAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+479.04 грн
10+353.63 грн
25+326.92 грн
100+279.21 грн
250+269.42 грн
В кошику  од. на суму  грн.
BTN8962TAAUMA1 BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t
BTN8962TAAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 6375 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+437.86 грн
10+323.06 грн
25+298.37 грн
100+254.51 грн
250+244.71 грн
В кошику  од. на суму  грн.
IRFB7537PBF infineon-data-sheet-irfs7537pbf-datasheet-en.pdf
IRFB7537PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+214.58 грн
10+133.51 грн
50+102.06 грн
100+86.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFB7540PBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFB7540PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+140.94 грн
50+65.24 грн
100+58.41 грн
500+43.57 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFB7546PBF irfb7546pbf.pdf?fileId=5546d462533600a401535619ea0e1e68
IRFB7546PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFP7530PBF irfp7530pbf.pdf?fileId=5546d462533600a40153562caf372027
IRFP7530PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+380.85 грн
25+211.30 грн
100+174.10 грн
500+135.44 грн
1000+126.47 грн
В кошику  од. на суму  грн.
IRFP7537PBF irfp7537pbf.pdf?fileId=5546d462533600a40153562cb6662029
IRFP7537PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7530-7PPBF irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8
IRFS7530-7PPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7530PBF irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3
IRFS7530PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7534-7PPBF irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da
IRFS7534-7PPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7534PBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFS7534PBF
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7530TRL7PP irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8
IRFS7530TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+159.25 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7530TRLPBF irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3
IRFS7530TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+131.57 грн
2400+115.61 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7537TRLPBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
IRFS7537TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+84.05 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7540TRLPBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFS7540TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
XMC1302T016X0032AAXUMA1 XMC1300.pdf
XMC1302T016X0032AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BSP318SH6327XTSA1 BSP318S.pdf
BSP318SH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
6ED003L02F2XUMA1 Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190
6ED003L02F2XUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+106.48 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
6EDL04N02PRXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N02PRXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+113.34 грн
6000+107.06 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BSC022N04LSATMA1 BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9
BSC022N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
6ED003L02F2XUMA1 Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190
6ED003L02F2XUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9796 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+203.49 грн
10+146.24 грн
25+133.83 грн
100+112.79 грн
250+106.68 грн
500+104.57 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
6EDL04N02PRXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N02PRXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+216.16 грн
10+155.62 грн
25+142.43 грн
100+120.04 грн
250+113.54 грн
500+111.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BSC022N04LSATMA1 BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9
BSC022N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BGA715N7E6327XTSA2 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA715N7E6327XTSA2
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7500+55.54 грн
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
BGA715N7E6327XTSA2 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA715N7E6327XTSA2
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
на замовлення 12207 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+96.60 грн
10+79.53 грн
25+75.00 грн
100+64.56 грн
250+61.05 грн
500+58.58 грн
1000+55.32 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
AUIRF8736M2TR auirf8736m2.pdf?fileId=5546d462533600a4015355b0dade1414
AUIRF8736M2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFP4568 auirfp4568.pdf?fileId=5546d462533600a4015355b1d8751458
AUIRFP4568
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
AUIRFS8407-7P auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5
AUIRFS8407-7P
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRAC27951SR irac27951sr-240w.pdf?fileId=5546d462533600a4015356971f172bd7
IRAC27951SR
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR11682 IRS27951
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11682, IRS27951
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
товару немає в наявності
В кошику  од. на суму  грн.
IRAM256-1567A2 IRAM256-1567A.pdf
Виробник: Infineon Technologies
Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
IRAM630-1562F2 IRAM630-1562F.pdf
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 15A
товару немає в наявності
В кошику  од. на суму  грн.
IRAMS10UP60B-S fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRAMS10UP60B-W fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRAMT20TP60A fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 20A
Packaging: Tube
Package / Case: Module
Mounting Type: Through Hole
товару немає в наявності
В кошику  од. на суму  грн.
IRFB7740PBF IRSD-S-A0000576246-1.pdf?t.download=true&u=5oefqw
IRFB7740PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8201TRPBF irfh8201pbf.pdf?fileId=5546d462533600a40153561f75651f0a
IRFH8201TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+42.21 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFH8202TRPBF irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c
IRFH8202TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8303TRPBF irfh8303pbf.pdf?fileId=5546d462533600a40153561f84a41f0e
IRFH8303TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 43A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 24 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IRFH8307TRPBF irfh8307pbf.pdf?fileId=5546d462533600a40153561f8baa1f10
IRFH8307TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 42A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7430TRL7PP infineon-irfs7430-7p-datasheet-en.pdf
IRFS7430TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+150.08 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7730TRL7PP infineon-irfs7730-7p-datasheet-en.pdf
IRFS7730TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 428 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13970 pF @ 25 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+134.82 грн
2400+117.36 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7730TRLPBF irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc
IRFS7730TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7734TRL7PP irfs7734-7ppbf.pdf?fileId=5546d462533600a40153563ac71b21e6
IRFS7734TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 197A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7734TRLPBF irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2
IRFS7734TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 183A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7787TRLPBF irfs7787pbf.pdf?fileId=5546d462533600a40153563ad73d21eb
IRFS7787TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 76A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFSL7540PBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFSL7540PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRG7PH28UEF Part_Number_Guide_Web.pdf
IRG7PH28UEF
Виробник: Infineon Technologies
Description: IGBT 1200V 15A TO247
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRGB4620DPBF IRGx4620D(-E)PbF.pdf
IRGB4620DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
товару немає в наявності
В кошику  од. на суму  грн.
IRGR4607DPBF IRGx4607DPbF.pdf
IRGR4607DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 11A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
товару немає в наявності
В кошику  од. на суму  грн.