Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148446) > Сторінка 214 з 2475
Фото | Назва | Виробник | Інформація |
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ESD200B1CSP0201XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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ESD205B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 30W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD5V5S1B02LRHE6327XTSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD102U2099ELE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Unidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD201B203LRHE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 5pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-3 Bidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 12.1V (Typ) Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD102U405LE6327XTSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGF120AE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: Ethernet, HDMI, RF Antenna Capacitance @ Frequency: 1.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 30A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 31V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE72762DATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 30 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-TO252-5-11 Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 40 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ESD101B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.3V (Typ) Voltage - Clamping (Max) @ Ipp: 30V Power Line Protection: No Part Status: Active |
на замовлення 136705 шт: термін постачання 21-31 дні (днів) |
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ESD102U102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSSLP-2-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V (Typ) Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 385618 шт: термін постачання 21-31 дні (днів) |
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ESD103B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.13pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 21V (Typ) Voltage - Clamping (Max) @ Ipp: 48V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 91909 шт: термін постачання 21-31 дні (днів) |
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ESD112B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD200B1CSP0201XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 76712 шт: термін постачання 21-31 дні (днів) |
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ESD205B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 30W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD5V5S1B02LRHE6327XTSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD102U2099ELE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-WFBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Unidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD102U405LE6327XTSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGF120AE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-WFBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: Ethernet, HDMI, RF Antenna Capacitance @ Frequency: 1.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 30A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 31V Power Line Protection: No |
на замовлення 223 шт: термін постачання 21-31 дні (днів) |
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IR3565BMTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -40°C ~ 85°C Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Supplier Device Package: 48-QFN (6x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB65R045C7ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB65R225C7ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R225C7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPW65R045C7FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO247-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
на замовлення 2318 шт: термін постачання 21-31 дні (днів) |
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IPB65R045C7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3846MTRPBF | Infineon Technologies |
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на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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IRFS7434-7PPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFS7434TRL7PP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V |
на замовлення 6400 шт: термін постачання 21-31 дні (днів) |
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IRFR7446PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFS7434TRL7PP | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V |
на замовлення 7130 шт: термін постачання 21-31 дні (днів) |
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IRFR7446TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BTN8960TAAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 6V ~ 40V Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 30A Current - Peak Output: 70A Technology: DMOS Voltage - Load: 6V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTN8980TAAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 6V ~ 40V Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 50A Current - Peak Output: 117A Technology: DMOS Voltage - Load: 6V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGP40N65F5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 360µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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IGP40N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO220-3-1 Td (on/off) @ 25°C: 22ns/165ns Switching Energy: 390µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 972 шт: термін постачання 21-31 дні (днів) |
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IGW40N65F5FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 360µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGW40N65H5FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 22ns/165ns Switching Energy: 390µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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IGW50N65F5FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/175ns Switching Energy: 490µJ (on), 160µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 305 W |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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IGW50N65H5FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/180ns Switching Energy: 520µJ (on), 180µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 305 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKA08N65F5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 10ns/116ns Switching Energy: 70µJ (on), 20µJ (off) Test Condition: 400V, 4A, 48Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 10.8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 31.2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKA08N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: PG-TO220-3-111 Td (on/off) @ 25°C: 11ns/115ns Switching Energy: 70µJ (on), 30µJ (off) Test Condition: 400V, 4A, 48Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 10.8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 31.2 W |
на замовлення 488 шт: термін постачання 21-31 дні (днів) |
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IKA15N65F5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-FP Td (on/off) @ 25°C: 17ns/150ns Switching Energy: 130µJ (on), 40µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 33.3 W |
на замовлення 559 шт: термін постачання 21-31 дні (днів) |
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IKA15N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-3-111 Td (on/off) @ 25°C: 17ns/160ns Switching Energy: 120µJ (on), 50µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 33.3 W |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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IKP08N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: PG-TO220-3-111 Td (on/off) @ 25°C: 11ns/115ns Switching Energy: 70µJ (on), 30µJ (off) Test Condition: 400V, 4A, 48Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 70 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKP15N65F5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 17ns/150ns Switching Energy: 130µJ (on), 40µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKP15N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 17ns/160ns Switching Energy: 120µJ (on), 50µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKP40N65F5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 360µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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IKW40N65H5FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 22ns/165ns Switching Energy: 390µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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IRAUDAMP19 | Infineon Technologies |
![]() Packaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 41V ~ 52V Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: IR4301 Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRAUDAMP21 | Infineon Technologies |
![]() Packaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: ±12V ~ 18V Max Output Power x Channels @ Load: 120W x 2 @ 3Ohm Board Type: Fully Populated Utilized IC / Part: IR4321 Supplied Contents: Board(s) Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRAUDAMP22 | Infineon Technologies |
![]() Packaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: ±12V ~ 13.5V Max Output Power x Channels @ Load: 80W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: IR4322 Supplied Contents: Board(s) Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRS2505LTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10.5V ~ 20.8V Mode: Critical Conduction (CRM) Supplier Device Package: SOT-23-5 Part Status: Obsolete Current - Startup: 60 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRS2538DSPBF | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRS2505LTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10.5V ~ 20.8V Mode: Critical Conduction (CRM) Supplier Device Package: SOT-23-5 Part Status: Obsolete Current - Startup: 60 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDP08E65D1XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDP15E65D1XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 114 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDW30E65D1FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: PG-TO247-3-1 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 259 шт: термін постачання 21-31 дні (днів) |
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IDW40E65D1FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 129 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: PG-TO247-3-1 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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IDP15E65D2XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 47 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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IDV15E65D2XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 47 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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IDW15E65D2FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 47 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: PG-TO247-3-1 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 219 шт: термін постачання 21-31 дні (днів) |
|
ESD200B1CSP0201XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 13VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15000+ | 1.01 грн |
ESD205B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5.5VWM 9VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
ESD5V5S1B02LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.2VC
Description: TVS DIODE 5.5VWM 9.2VC
товару немає в наявності
В кошику
од. на суму грн.
ESD102U2099ELE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
ESD201B203LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 12.1VC TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5.5VWM 12.1VC TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
ESD102U405LE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM TSLP-5-2
Description: TVS DIODE 3.3VWM TSLP-5-2
товару немає в наявності
В кошику
од. на суму грн.
BGF120AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 31VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
Description: TVS DIODE 5.3VWM 31VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
TLE72762DATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
ESD101B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
на замовлення 136705 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.14 грн |
45+ | 6.82 грн |
100+ | 5.09 грн |
500+ | 4.58 грн |
1000+ | 4.38 грн |
2000+ | 4.31 грн |
5000+ | 4.18 грн |
ESD102U102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 385618 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.49 грн |
24+ | 13.03 грн |
100+ | 9.19 грн |
500+ | 7.76 грн |
1000+ | 6.16 грн |
ESD103B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 91909 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.30 грн |
29+ | 10.73 грн |
100+ | 6.15 грн |
500+ | 5.44 грн |
1000+ | 4.98 грн |
2000+ | 4.91 грн |
5000+ | 4.76 грн |
ESD112B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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ESD200B1CSP0201XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 13VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 76712 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 7.96 грн |
66+ | 4.67 грн |
150+ | 2.05 грн |
500+ | 1.76 грн |
1000+ | 1.58 грн |
2000+ | 1.51 грн |
5000+ | 1.39 грн |
ESD205B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5.5VWM 9VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
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ESD5V5S1B02LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.2VC
Description: TVS DIODE 5.5VWM 9.2VC
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ESD102U2099ELE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
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од. на суму грн.
ESD102U405LE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM TSLP-5-2
Description: TVS DIODE 3.3VWM TSLP-5-2
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BGF120AE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 31VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
Description: TVS DIODE 5.3VWM 31VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
на замовлення 223 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 19.90 грн |
20+ | 15.94 грн |
100+ | 13.56 грн |
IR3565BMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
товару немає в наявності
В кошику
од. на суму грн.
IPB65R045C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
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IPB65R225C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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IPP65R225C7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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IPW65R045C7FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 2318 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 849.92 грн |
30+ | 464.30 грн |
120+ | 435.11 грн |
510+ | 398.92 грн |
IPB65R045C7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
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IR3846MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 35A 34PQFN
Description: IC REG BUCK ADJ 35A 34PQFN
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
IRFS7434-7PPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
IRFS7434TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 83.86 грн |
1600+ | 76.24 грн |
IRFR7446PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 56A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Description: MOSFET N-CH 40V 56A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
IRFS7434TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
на замовлення 7130 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 230.78 грн |
10+ | 151.12 грн |
100+ | 105.19 грн |
IRFR7446TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 24.59 грн |
4000+ | 23.62 грн |
BTN8960TAAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
BTN8980TAAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
IGP40N65F5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 269.78 грн |
50+ | 131.63 грн |
100+ | 119.14 грн |
IGP40N65H5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 972 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 269.78 грн |
50+ | 131.63 грн |
100+ | 119.14 грн |
500+ | 91.29 грн |
IGW40N65F5FKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
товару немає в наявності
В кошику
од. на суму грн.
IGW40N65H5FKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 142 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 319.92 грн |
30+ | 170.71 грн |
120+ | 140.32 грн |
IGW50N65F5FKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
на замовлення 35 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 393.13 грн |
30+ | 212.94 грн |
IGW50N65H5FKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
товару немає в наявності
В кошику
од. на суму грн.
IKA08N65F5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
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IKA08N65H5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
на замовлення 488 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 194.97 грн |
50+ | 92.60 грн |
100+ | 83.31 грн |
IKA15N65F5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
на замовлення 559 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.48 грн |
50+ | 101.09 грн |
100+ | 91.09 грн |
500+ | 69.03 грн |
IKA15N65H5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
Description: IGBT 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 222.03 грн |
IKP08N65H5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
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IKP15N65F5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
товару немає в наявності
В кошику
од. на суму грн.
IKP15N65H5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
товару немає в наявності
В кошику
од. на суму грн.
IKP40N65F5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 316.73 грн |
50+ | 156.53 грн |
100+ | 142.13 грн |
IKW40N65H5FKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 353.34 грн |
30+ | 189.34 грн |
120+ | 156.20 грн |
IRAUDAMP19 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR4301
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 41V ~ 52V
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4301
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR IR4301
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 41V ~ 52V
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4301
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 15059.11 грн |
IRAUDAMP21 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR4321
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±12V ~ 18V
Max Output Power x Channels @ Load: 120W x 2 @ 3Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4321
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR IR4321
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±12V ~ 18V
Max Output Power x Channels @ Load: 120W x 2 @ 3Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4321
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 22043.93 грн |
IRAUDAMP22 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR4322
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±12V ~ 13.5V
Max Output Power x Channels @ Load: 80W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4322
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR IR4322
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±12V ~ 13.5V
Max Output Power x Channels @ Load: 80W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4322
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 19566.57 грн |
IRS2505LTRPBF |
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Виробник: Infineon Technologies
Description: IC PFC CTRLR CRM SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 20.8V
Mode: Critical Conduction (CRM)
Supplier Device Package: SOT-23-5
Part Status: Obsolete
Current - Startup: 60 µA
Description: IC PFC CTRLR CRM SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 20.8V
Mode: Critical Conduction (CRM)
Supplier Device Package: SOT-23-5
Part Status: Obsolete
Current - Startup: 60 µA
товару немає в наявності
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IRS2538DSPBF |
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Виробник: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 85.6KHZ 8SO
Description: IC PFC/BALLAST CNTRL 85.6KHZ 8SO
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од. на суму грн.
IRS2505LTRPBF |
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Виробник: Infineon Technologies
Description: IC PFC CTRLR CRM SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 20.8V
Mode: Critical Conduction (CRM)
Supplier Device Package: SOT-23-5
Part Status: Obsolete
Current - Startup: 60 µA
Description: IC PFC CTRLR CRM SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 20.8V
Mode: Critical Conduction (CRM)
Supplier Device Package: SOT-23-5
Part Status: Obsolete
Current - Startup: 60 µA
товару немає в наявності
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од. на суму грн.
IDP08E65D1XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 8A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE STANDARD 650V 8A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
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од. на суму грн.
IDP15E65D1XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 114 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE STANDARD 650V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 114 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
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IDW30E65D1FKSA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 650V 60A TO247-3-1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE GP 650V 60A TO247-3-1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 259 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 224.42 грн |
30+ | 116.18 грн |
120+ | 94.11 грн |
IDW40E65D1FKSA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 650V 80A TO247-3-1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 129 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE GP 650V 80A TO247-3-1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 129 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 243.52 грн |
30+ | 127.34 грн |
IDP15E65D2XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE STANDARD 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 148.82 грн |
50+ | 62.69 грн |
100+ | 60.54 грн |
IDV15E65D2XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE STANDARD 650V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.88 грн |
50+ | 46.64 грн |
100+ | 45.03 грн |
IDW15E65D2FKSA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 650V 30A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE STD 650V 30A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 195.77 грн |
30+ | 99.37 грн |
120+ | 98.28 грн |