Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119473) > Сторінка 207 з 1992

Обрати Сторінку:   [  << Попередня Сторінка ]  1 199 202 203 204 205 206 207 208 209 210 211 212 398 597 796 995 1194 1393 1592 1791 1990 1992  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IRFH4253DTRPBF IRFH4253DTRPBF Infineon Technologies irfh4253dpbf.pdf?fileId=5546d462533600a40153561a847c1e8e Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)
2+235.20 грн
10+147.52 грн
100+102.35 грн
500+77.94 грн
1000+74.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD50R1K4CEBTMA1 IPD50R1K4CEBTMA1 Infineon Technologies IPx50R1K4CE.pdf Description: MOSFET N-CH 500V 3.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R3K0CEBTMA1 IPD50R3K0CEBTMA1 Infineon Technologies IPx50R3K0CE.pdf Description: MOSFET N-CH 500V 1.7A PG-TO-252
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R1K4CEBTMA1 IPD50R1K4CEBTMA1 Infineon Technologies IPx50R1K4CE.pdf Description: MOSFET N-CH 500V 3.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R3K0CEBTMA1 IPD50R3K0CEBTMA1 Infineon Technologies IPx50R3K0CE.pdf Description: MOSFET N-CH 500V 1.7A PG-TO-252
товару немає в наявності
В кошику  од. на суму  грн.
IPP50R190CEXKSA1 IPP50R190CEXKSA1 Infineon Technologies IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb Description: MOSFET N-CH 500V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
на замовлення 649 шт:
термін постачання 21-31 дні (днів)
2+170.56 грн
50+80.91 грн
100+72.77 грн
500+54.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC4504F144F512ABXQMA1 XMC4504F144F512ABXQMA1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR3847MTRPBF IR3847MTRPBF Infineon Technologies ir3847m.pdf?fileId=5546d462533600a4015355d5711917f1 Description: IC REG BUCK ADJUSTABLE 25A PQFN
товару немає в наявності
В кошику  од. на суму  грн.
IR3891MTRPBF IR3891MTRPBF Infineon Technologies ir3891m.pdf?fileId=5546d462533600a4015355d5c3a9180b Description: IC REG BUCK ADJ 4A DL PQFN
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R190P6XKSA1 IPA60R190P6XKSA1 Infineon Technologies DS_IPA60R190P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f37c80e24240f Description: MOSFET N-CH 600V 20.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
2+207.94 грн
50+99.38 грн
100+89.57 грн
500+67.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R600P6XKSA1 IPA60R600P6XKSA1 Infineon Technologies DS_IPA60R600P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 4.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600P6 IPD60R600P6 Infineon Technologies DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R600P6XKSA1 IPP60R600P6XKSA1 Infineon Technologies DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU50R950CEBKMA1 IPU50R950CEBKMA1 Infineon Technologies IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R190P6FKSA1 IPW60R190P6FKSA1 Infineon Technologies Infineon-IPX60R190P6-DS-v02_01-en.pdf?fileId=db3a30433f2e70c5013f37c80e24240f Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
2+253.89 грн
30+134.09 грн
120+109.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BGA 715N7 E6330 BGA 715N7 E6330 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA 715N7 E6330 BGA 715N7 E6330 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA 231N7 E6330 BGA 231N7 E6330 Infineon Technologies BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d Description: IC AMP LNA SIGE GPS TSLP-7
товару немає в наявності
В кошику  од. на суму  грн.
BGA 231N7 E6330 BGA 231N7 E6330 Infineon Technologies BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d Description: IC AMP LNA SIGE GPS TSLP-7
товару немає в наявності
В кошику  од. на суму  грн.
BGA 825L6S E6327 BGA 825L6S E6327 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP LNA SIGE GPS 6TSLP
на замовлення 12236 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGA 825L6S E6327 BGA 825L6S E6327 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP LNA SIGE GPS 6TSLP
на замовлення 12236 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGA 715N7 E6330 BGA 715N7 E6330 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA231N7E6330XTSA1 BGA231N7E6330XTSA1 Infineon Technologies BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d Description: IC AMP LNA SIGE GPS TSLP-7
товару немає в наявності
В кошику  од. на суму  грн.
BGA 825L6S E6327 BGA 825L6S E6327 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP LNA SIGE GPS 6TSLP
товару немає в наявності
В кошику  од. на суму  грн.
CY7C65211-24LTXI CY7C65211-24LTXI Infineon Technologies Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1308 шт:
термін постачання 21-31 дні (днів)
2+215.73 грн
10+156.14 грн
25+143.09 грн
100+120.87 грн
490+110.72 грн
980+107.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C65215-32LTXI CY7C65215-32LTXI Infineon Technologies download Description: IC USB TO SERIAL BRIDGE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3231 шт:
термін постачання 21-31 дні (днів)
2+228.97 грн
10+165.29 грн
25+151.64 грн
100+128.23 грн
490+117.57 грн
980+114.22 грн
1470+110.69 грн
2940+108.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS21867STRPBF IRS21867STRPBF Infineon Technologies infineon-irs21867s-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4039 шт:
термін постачання 21-31 дні (днів)
3+133.17 грн
10+94.49 грн
25+86.09 грн
100+72.10 грн
250+67.95 грн
500+65.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PVT312LS-TPBF PVT312LS-TPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 23867 шт:
термін постачання 21-31 дні (днів)
1+350.46 грн
10+300.58 грн
25+287.05 грн
50+260.17 грн
100+251.25 грн
250+239.92 грн
В кошику  од. на суму  грн.
IRFR3410TRPBF IRFR3410TRPBF Infineon Technologies irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 description Description: MOSFET N-CH 100V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 958 шт:
термін постачання 21-31 дні (днів)
3+105.92 грн
10+64.27 грн
100+42.73 грн
500+31.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC010N04LSATMA1 BSC010N04LSATMA1 Infineon Technologies BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4 Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
на замовлення 7336 шт:
термін постачання 21-31 дні (днів)
2+198.59 грн
10+123.44 грн
100+84.97 грн
500+64.30 грн
1000+61.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC010N04LSATMA1 BSC010N04LSATMA1 Infineon Technologies BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4 Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+56.05 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC014N04LSIATMA1 BSC014N04LSIATMA1 Infineon Technologies BSC014N04LSI_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552fc8f274806 Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
на замовлення 42336 шт:
термін постачання 21-31 дні (днів)
2+189.25 грн
10+117.74 грн
100+80.82 грн
500+61.03 грн
1000+57.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC014N04LSIATMA1 BSC014N04LSIATMA1 Infineon Technologies BSC014N04LSI_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552fc8f274806 Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
5000+53.05 грн
10000+49.91 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC019N04NSGATMA1 BSC019N04NSGATMA1 Infineon Technologies Infineon-BSC019N04NSG-DS-v01_04-en.pdf?fileId=db3a30431689f4420116c45be78a0832 Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
на замовлення 9942 шт:
термін постачання 21-31 дні (днів)
3+123.05 грн
10+75.37 грн
100+50.70 грн
500+37.65 грн
1000+34.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC036NE7NS3GATMA1 BSC036NE7NS3GATMA1 Infineon Technologies BSC036NE7NS3G_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304332fc1ee7013316e0d2607105 Description: MOSFET N-CH 75V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
2+209.50 грн
10+130.57 грн
100+90.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC036NE7NS3GATMA1 BSC036NE7NS3GATMA1 Infineon Technologies BSC036NE7NS3G_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304332fc1ee7013316e0d2607105 Description: MOSFET N-CH 75V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC046N10NS3GATMA1 BSC046N10NS3GATMA1 Infineon Technologies BSC046N10NS3G.pdf Description: MOSFET N-CH 100V 17A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC046N10NS3GATMA1 BSC046N10NS3GATMA1 Infineon Technologies BSC046N10NS3G.pdf Description: MOSFET N-CH 100V 17A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC440N10NS3GATMA1 BSC440N10NS3GATMA1 Infineon Technologies BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56 Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
на замовлення 10345 шт:
термін постачання 21-31 дні (днів)
4+83.33 грн
10+50.40 грн
100+33.22 грн
500+24.26 грн
1000+22.04 грн
2000+20.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC500N20NS3GATMA1 BSC500N20NS3GATMA1 Infineon Technologies BSC500N20NS3+G+Rev2.0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30433cfb5caa013d11dd032123a3 Description: MOSFET N-CH 200V 24A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 22A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V
на замовлення 7285 шт:
термін постачання 21-31 дні (днів)
2+166.66 грн
10+103.34 грн
100+70.62 грн
500+53.16 грн
1000+52.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC500N20NS3GATMA1 BSC500N20NS3GATMA1 Infineon Technologies BSC500N20NS3+G+Rev2.0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30433cfb5caa013d11dd032123a3 Description: MOSFET N-CH 200V 24A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 22A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+49.20 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ900N15NS3 G BSZ900N15NS3 G Infineon Technologies BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c Description: MOSFET N-CH 150V 13A TDSON-8
на замовлення 15211 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IGB10N60TATMA1 IGB10N60TATMA1 Infineon Technologies IGB10N60T_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30431ed1d7b2011f4a5040f45e92 Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
3+127.72 грн
10+78.22 грн
100+52.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IGB20N60H3ATMA1 IGB20N60H3ATMA1 Infineon Technologies IGB20N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a4677106a2b6d Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
2+158.10 грн
10+97.49 грн
100+66.29 грн
500+49.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 2416 шт:
термін постачання 21-31 дні (днів)
2+195.48 грн
10+122.02 грн
100+84.20 грн
500+65.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55 Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
на замовлення 2591 шт:
термін постачання 21-31 дні (днів)
1+348.12 грн
10+222.51 грн
100+158.50 грн
500+132.74 грн
В кошику  од. на суму  грн.
IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
на замовлення 4633 шт:
термін постачання 21-31 дні (днів)
4+92.68 грн
10+56.10 грн
100+37.06 грн
500+27.12 грн
1000+24.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IGW30N100TFKSA1 IGW30N100TFKSA1 Infineon Technologies IGW30N100T.pdf Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
товару немає в наявності
В кошику  од. на суму  грн.
IHW30N135R3FKSA1 IHW30N135R3FKSA1 Infineon Technologies DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88 Description: IGBT TRENCH 1350V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/337ns
Switching Energy: 1.93mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 263 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 349 W
товару немає в наявності
В кошику  од. на суму  грн.
IHW40N120R3FKSA1 IHW40N120R3FKSA1 Infineon Technologies DS_IHW40N120R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a6e8aa8405fe2 Description: IGBT TRENCH 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/336ns
Switching Energy: 2.02mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 429 W
товару немає в наявності
В кошику  од. на суму  грн.
IKB06N60TATMA1 IKB06N60TATMA1 Infineon Technologies IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2 Description: IGBT TRENCH FS 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
на замовлення 615 шт:
термін постачання 21-31 дні (днів)
2+157.32 грн
10+97.27 грн
100+66.20 грн
500+49.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R150CFDXKSA1 IPA65R150CFDXKSA1 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R380C6ATMA1 IPB60R380C6ATMA1 Infineon Technologies IPB60R380C6_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd012297c86280445b Description: MOSFET N-CH 600V 10.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R150CFDATMA1 IPB65R150CFDATMA1 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB90R340C3ATMA1 IPB90R340C3ATMA1 Infineon Technologies IPB90R340C3+final+datasheet.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a304336c52a950136c5c59ef500ad Description: MOSFET N-CH 900V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB90R340C3ATMA1 IPB90R340C3ATMA1 Infineon Technologies IPB90R340C3+final+datasheet.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a304336c52a950136c5c59ef500ad Description: MOSFET N-CH 900V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R1K4CFDBTMA1 IPD65R1K4CFDBTMA1 Infineon Technologies DS_IPD65R1K4CFD_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304338ec6d3901390056583f48f4 Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R250C6XTMA1 IPD65R250C6XTMA1 Infineon Technologies DS_IPD65R250C6_2_1.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043337a914d013383668e4d609a Description: MOSFET N-CH 650V 16.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V
Power Dissipation (Max): 208.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 Infineon Technologies Infineon-IPD65R950CFD-DS-v02_01-en.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433efacd9a013f0a7335ee3163 Description: MOSFET N-CH 650V 3.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 36.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R150CFDXKSA1 IPI65R150CFDXKSA1 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH4253DTRPBF irfh4253dpbf.pdf?fileId=5546d462533600a40153561a847c1e8e
IRFH4253DTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+235.20 грн
10+147.52 грн
100+102.35 грн
500+77.94 грн
1000+74.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD50R1K4CEBTMA1 IPx50R1K4CE.pdf
IPD50R1K4CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R3K0CEBTMA1 IPx50R3K0CE.pdf
IPD50R3K0CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A PG-TO-252
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R1K4CEBTMA1 IPx50R1K4CE.pdf
IPD50R1K4CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R3K0CEBTMA1 IPx50R3K0CE.pdf
IPD50R3K0CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A PG-TO-252
товару немає в наявності
В кошику  од. на суму  грн.
IPP50R190CEXKSA1 IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb
IPP50R190CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
на замовлення 649 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+170.56 грн
50+80.91 грн
100+72.77 грн
500+54.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC4504F144F512ABXQMA1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
XMC4504F144F512ABXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR3847MTRPBF ir3847m.pdf?fileId=5546d462533600a4015355d5711917f1
IR3847MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 25A PQFN
товару немає в наявності
В кошику  од. на суму  грн.
IR3891MTRPBF ir3891m.pdf?fileId=5546d462533600a4015355d5c3a9180b
IR3891MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 4A DL PQFN
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R190P6XKSA1 DS_IPA60R190P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f37c80e24240f
IPA60R190P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+207.94 грн
50+99.38 грн
100+89.57 грн
500+67.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R600P6XKSA1 DS_IPA60R600P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f3862b5622681
IPA60R600P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600P6 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPD60R600P6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R600P6XKSA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPP60R600P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU50R950CEBKMA1 IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064
IPU50R950CEBKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R190P6FKSA1 Infineon-IPX60R190P6-DS-v02_01-en.pdf?fileId=db3a30433f2e70c5013f37c80e24240f
IPW60R190P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.89 грн
30+134.09 грн
120+109.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BGA 715N7 E6330 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA 715N7 E6330
Виробник: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA 715N7 E6330 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA 715N7 E6330
Виробник: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA 231N7 E6330 BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d
BGA 231N7 E6330
Виробник: Infineon Technologies
Description: IC AMP LNA SIGE GPS TSLP-7
товару немає в наявності
В кошику  од. на суму  грн.
BGA 231N7 E6330 BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d
BGA 231N7 E6330
Виробник: Infineon Technologies
Description: IC AMP LNA SIGE GPS TSLP-7
товару немає в наявності
В кошику  од. на суму  грн.
BGA 825L6S E6327 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA 825L6S E6327
Виробник: Infineon Technologies
Description: IC AMP LNA SIGE GPS 6TSLP
на замовлення 12236 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGA 825L6S E6327 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA 825L6S E6327
Виробник: Infineon Technologies
Description: IC AMP LNA SIGE GPS 6TSLP
на замовлення 12236 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGA 715N7 E6330 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA 715N7 E6330
Виробник: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA231N7E6330XTSA1 BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d
BGA231N7E6330XTSA1
Виробник: Infineon Technologies
Description: IC AMP LNA SIGE GPS TSLP-7
товару немає в наявності
В кошику  од. на суму  грн.
BGA 825L6S E6327 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA 825L6S E6327
Виробник: Infineon Technologies
Description: IC AMP LNA SIGE GPS 6TSLP
товару немає в наявності
В кошику  од. на суму  грн.
CY7C65211-24LTXI Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
CY7C65211-24LTXI
Виробник: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1308 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+215.73 грн
10+156.14 грн
25+143.09 грн
100+120.87 грн
490+110.72 грн
980+107.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C65215-32LTXI download
CY7C65215-32LTXI
Виробник: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3231 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+228.97 грн
10+165.29 грн
25+151.64 грн
100+128.23 грн
490+117.57 грн
980+114.22 грн
1470+110.69 грн
2940+108.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS21867STRPBF infineon-irs21867s-datasheet-en.pdf
IRS21867STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4039 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.17 грн
10+94.49 грн
25+86.09 грн
100+72.10 грн
250+67.95 грн
500+65.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PVT312LS-TPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312LS-TPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 23867 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+350.46 грн
10+300.58 грн
25+287.05 грн
50+260.17 грн
100+251.25 грн
250+239.92 грн
В кошику  од. на суму  грн.
IRFR3410TRPBF description irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
IRFR3410TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+105.92 грн
10+64.27 грн
100+42.73 грн
500+31.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC010N04LSATMA1 BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4
BSC010N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
на замовлення 7336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.59 грн
10+123.44 грн
100+84.97 грн
500+64.30 грн
1000+61.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC010N04LSATMA1 BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4
BSC010N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+56.05 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC014N04LSIATMA1 BSC014N04LSI_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552fc8f274806
BSC014N04LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
на замовлення 42336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.25 грн
10+117.74 грн
100+80.82 грн
500+61.03 грн
1000+57.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC014N04LSIATMA1 BSC014N04LSI_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552fc8f274806
BSC014N04LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+53.05 грн
10000+49.91 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC019N04NSGATMA1 Infineon-BSC019N04NSG-DS-v01_04-en.pdf?fileId=db3a30431689f4420116c45be78a0832
BSC019N04NSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
на замовлення 9942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.05 грн
10+75.37 грн
100+50.70 грн
500+37.65 грн
1000+34.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC036NE7NS3GATMA1 BSC036NE7NS3G_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304332fc1ee7013316e0d2607105
BSC036NE7NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.50 грн
10+130.57 грн
100+90.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC036NE7NS3GATMA1 BSC036NE7NS3G_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304332fc1ee7013316e0d2607105
BSC036NE7NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC046N10NS3GATMA1 BSC046N10NS3G.pdf
BSC046N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC046N10NS3GATMA1 BSC046N10NS3G.pdf
BSC046N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC440N10NS3GATMA1 BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56
BSC440N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
на замовлення 10345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.33 грн
10+50.40 грн
100+33.22 грн
500+24.26 грн
1000+22.04 грн
2000+20.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC500N20NS3GATMA1 BSC500N20NS3+G+Rev2.0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30433cfb5caa013d11dd032123a3
BSC500N20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 22A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V
на замовлення 7285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.66 грн
10+103.34 грн
100+70.62 грн
500+53.16 грн
1000+52.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC500N20NS3GATMA1 BSC500N20NS3+G+Rev2.0.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30433cfb5caa013d11dd032123a3
BSC500N20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 22A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+49.20 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ900N15NS3 G BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c
BSZ900N15NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 13A TDSON-8
на замовлення 15211 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IGB10N60TATMA1 IGB10N60T_Rev1_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30431ed1d7b2011f4a5040f45e92
IGB10N60TATMA1
Виробник: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.72 грн
10+78.22 грн
100+52.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IGB20N60H3ATMA1 IGB20N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a4677106a2b6d
IGB20N60H3ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+158.10 грн
10+97.49 грн
100+66.29 грн
500+49.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 2416 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+195.48 грн
10+122.02 грн
100+84.20 грн
500+65.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGB50N60TATMA1 IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55
IGB50N60TATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
на замовлення 2591 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+348.12 грн
10+222.51 грн
100+158.50 грн
500+132.74 грн
В кошику  од. на суму  грн.
IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
на замовлення 4633 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.68 грн
10+56.10 грн
100+37.06 грн
500+27.12 грн
1000+24.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IGW30N100TFKSA1 IGW30N100T.pdf
IGW30N100TFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
товару немає в наявності
В кошику  од. на суму  грн.
IHW30N135R3FKSA1 DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88
IHW30N135R3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1350V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/337ns
Switching Energy: 1.93mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 263 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 349 W
товару немає в наявності
В кошику  од. на суму  грн.
IHW40N120R3FKSA1 DS_IHW40N120R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a6e8aa8405fe2
IHW40N120R3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/336ns
Switching Energy: 2.02mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 429 W
товару немає в наявності
В кошику  од. на суму  грн.
IKB06N60TATMA1 IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2
IKB06N60TATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
на замовлення 615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+157.32 грн
10+97.27 грн
100+66.20 грн
500+49.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R150CFDXKSA1 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPA65R150CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R380C6ATMA1 IPB60R380C6_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd012297c86280445b
IPB60R380C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R150CFDATMA1 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPB65R150CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB90R340C3ATMA1 IPB90R340C3+final+datasheet.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a304336c52a950136c5c59ef500ad
IPB90R340C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB90R340C3ATMA1 IPB90R340C3+final+datasheet.pdf?folderId=db3a30432313ff5e0123a8557b1c5ba2&fileId=db3a304336c52a950136c5c59ef500ad
IPB90R340C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R1K4CFDBTMA1 DS_IPD65R1K4CFD_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304338ec6d3901390056583f48f4
IPD65R1K4CFDBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R250C6XTMA1 DS_IPD65R250C6_2_1.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043337a914d013383668e4d609a
IPD65R250C6XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 16.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V
Power Dissipation (Max): 208.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R950CFDBTMA1 Infineon-IPD65R950CFD-DS-v02_01-en.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433efacd9a013f0a7335ee3163
IPD65R950CFDBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 36.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R150CFDXKSA1 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPI65R150CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 199 202 203 204 205 206 207 208 209 210 211 212 398 597 796 995 1194 1393 1592 1791 1990 1992  [ Наступна Сторінка >> ]