Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124869) > Сторінка 447 з 2082
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CY8C20045-24LKXIT | Infineon Technologies |
Description: IC CAPSENSE 8K FLASH 16 QFNDigiKey Programmable: Not Verified Supplier Device Package: 16-QFN (3x3) Core Processor: M8C Applications: Capacitive Sensing Controller Series: CY8C20045 Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| BA89502VH6327XTSA1 | Infineon Technologies |
Description: DIODE GEN PURP SC79-2Part Status: Obsolete Packaging: Bulk |
на замовлення 16350 шт: термін постачання 21-31 дні (днів) |
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TLE4929CXHAM18NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSSupplier Device Package: PG-SSO-3-53 Current - Supply (Max): 13.4mA Current - Output (Max): 15mA Sensing Range: ±120mT Resolution: 16 b Technology: Hall Effect Voltage - Supply: 4V ~ 16V Operating Temperature: -40°C ~ 175°C (TJ) Axis: Single Mounting Type: Through Hole Output Type: Open Drain Package / Case: 3-SSIP Module Features: Programmable, Temperature Compensated Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE4929CXHAM18NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackage / Case: 3-SSIP Module Features: Programmable, Temperature Compensated Packaging: Cut Tape (CT) Supplier Device Package: PG-SSO-3-53 Current - Supply (Max): 13.4mA Current - Output (Max): 15mA Sensing Range: ±120mT Resolution: 16 b Technology: Hall Effect Voltage - Supply: 4V ~ 16V Operating Temperature: -40°C ~ 175°C (TJ) Axis: Single Mounting Type: Through Hole Output Type: Open Drain |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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IGI60F1414A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 28TIQFNPart Status: Active Load Type: Inductive, Resistive Supplier Device Package: PG-TIQFN-28-1 Applications: General Purpose Rds On (Typ): 140mOhm LS, 140mOhm HS Output Configuration: Half Bridge (2) Interface: Logic, PWM Mounting Type: Surface Mount Package / Case: 28-PowerTQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMC302AF064XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPDigiKey Programmable: Not Verified Number of I/O: 41 Supplier Device Package: 64-QFP (10x10) Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Cut Tape (CT) |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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IMC301AF064XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT Supplier Device Package: 64-QFP (10x10) Part Status: Active Number of I/O: 41 DigiKey Programmable: Not Verified |
на замовлення 1567 шт: термін постачання 21-31 дні (днів) |
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SAF-XC886CM-6FFI 5V AC | Infineon Technologies |
Description: IC MCU 8BIT 24KB FLASH 48TQFPOscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1.75K x 8 Program Memory Size: 24KB (24K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tape & Reel (TR) Number of I/O: 34 Part Status: Obsolete Supplier Device Package: PG-TQFP-48 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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ISC0603NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 12.3A/56A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 24µA Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC0603NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 12.3A/56A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 24µA Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 6987 шт: термін постачання 21-31 дні (днів) |
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ISC0602NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 14A/66A TDSON-8Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 29µA Power Dissipation (Max): 2.5W (Ta), 60W (Tc) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC0602NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 14A/66A TDSON-8Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 29µA Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 10539 шт: термін постачання 21-31 дні (днів) |
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ISC0805NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/71A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 40µA Supplier Device Package: PG-TDSON-8-46 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ISC0805NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/71A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 40µA Supplier Device Package: PG-TDSON-8-46 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 10603 шт: термін постачання 21-31 дні (днів) |
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ISC0806NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 16A/97A TDSONMounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 2.3V @ 61µA Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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ISC0806NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 16A/97A TDSONSupplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 2.3V @ 61µA Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 4756 шт: термін постачання 21-31 дні (днів) |
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| DD800S17H4_B2 | Infineon Technologies |
Description: DDXS17F - RECTIFIER DIODE MODULE |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
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| DD800S17HA_B2 | Infineon Technologies |
Description: RECTIFIER DIODE MODULEPackaging: Bulk |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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AUIRF7648M2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 14A DIRECTFETVgs(th) (Max) @ Id: 4.9V @ 150µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric M4 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: DirectFET™ Isometric M4 Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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AUIRF7648M2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 14A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: DirectFET™ Isometric M4 Vgs(th) (Max) @ Id: 4.9V @ 150µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric M4 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 9399 шт: термін постачання 21-31 дні (днів) |
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BAT54-04E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKY |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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| BAT54-06E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKYSpeed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23-3-3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Common Anode Technology: Schottky Reverse Recovery Time (trr): 5 ns |
на замовлення 163000 шт: термін постачання 21-31 дні (днів) |
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BAT54-05E6327 | Infineon Technologies |
Description: SCHOTTKY DIODECurrent - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23-3-3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 41151 шт: термін постачання 21-31 дні (днів) |
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T3800N16TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 5970A TO-200AEVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 5970 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 3800 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: 135°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-200AE Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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TLE4253EXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSO-27Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-27 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 18017 шт: термін постачання 21-31 дні (днів) |
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TLE4253GSXUMA4 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE4253GSXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8Voltage - Output (Min/Fixed): Tracking Supplier Device Package: PG-DSO-8 Number of Regulators: 1 Voltage - Input (Max): 40V Qualification: AEC-Q100 Current - Supply (Max): 15 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 200mA PSRR: 60dB (100Hz) Grade: Automotive Control Features: Enable Current - Quiescent (Iq): 150 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 250mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE4253GSXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 150 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 250mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Grade: Automotive Control Features: Enable Voltage - Output (Min/Fixed): Tracking Supplier Device Package: PG-DSO-8 Qualification: AEC-Q100 Current - Supply (Max): 15 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 200mA PSRR: 60dB (100Hz) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR583E6327HTSA1 | Infineon Technologies |
Description: TRANS PREBIASPackaging: Bulk |
на замовлення 521602 шт: термін постачання 21-31 дні (днів) |
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IPLK80R750P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK80R750P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 |
на замовлення 1596 шт: термін постачання 21-31 дні (днів) |
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IPLK70R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK70R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK80R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK80R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK80R900P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-TDSON-8 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK80R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK80R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K4P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K4P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
REFXDPL8219U40WTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR XDPL8219Packaging: Bulk Voltage - Output: 54V Current - Output / Channel: 800mA Utilized IC / Part: XDPL8219 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| SIGC14T60SNCX1SA3 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFERCurrent - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Test Condition: 400V, 15A, 21Ohm, 15V Td (on/off) @ 25°C: 31ns/261ns IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BLOCKCHAINSTARTKITTOBO1 | Infineon Technologies |
Description: SECURITY 2 GOPart Status: Active Packaging: Box Type: Near Field Communication (NFC) |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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IR35215MTRPBF | Infineon Technologies |
Description: IC CONTROLLER MULTIPHASE 40QFNPart Status: Active Supplier Device Package: 32-MLPQ (5x5) Current - Supply: 10mA Applications: Multiphase Controller Voltage - Supply: 4.75V ~ 7.5V Operating Temperature: 0°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IR35215MTRPBF | Infineon Technologies |
Description: IC CONTROLLER MULTIPHASE 40QFNPart Status: Active Supplier Device Package: 32-MLPQ (5x5) Current - Supply: 10mA Applications: Multiphase Controller Voltage - Supply: 4.75V ~ 7.5V Operating Temperature: 0°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 5227 шт: термін постачання 21-31 дні (днів) |
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CY7C1370KV33-200AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 100TQFPOperating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 18Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 512K x 36 Access Time: 3 ns Memory Interface: Parallel Supplier Device Package: 100-TQFP (14x20) Memory Format: SRAM Clock Frequency: 200 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.135V ~ 3.6V |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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IPA075N15N3 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETRds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 39W (Tc) |
на замовлення 527 шт: термін постачання 21-31 дні (днів) |
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IPA075N15N3G | Infineon Technologies |
Description: IPA075N15 - 12V-300V N-CHANNEL P |
товару немає в наявності |
Мінімальне замовлення: 87 шт В кошику од. на суму грн. | ||||||||||||||
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IRFHM8363TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 11A 8PQFNPart Status: Not For New Designs Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Current - Continuous Drain (Id) @ 25°C: 11A Drain to Source Voltage (Vdss): 30V Power - Max: 2.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI075N15N3G | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI075N15N3 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC120N12LSGATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TDSON-8Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.4V @ 72µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSC120N12LSGATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TDSON-8Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.4V @ 72µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 2367 шт: термін постачання 21-31 дні (днів) |
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| BSC130P03LS G | Infineon Technologies |
Description: P-CHANNEL POWER MOSFET Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY8C4014LQI-SLT1 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 16QFNSpeed: 16MHz Mounting Type: Surface Mount Program Memory Size: 16KB (16K x 8) Package / Case: 16-UFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 12 Supplier Device Package: 16-QFN (3x3) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I²C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAF-C161SLM3VAAFXUMA1 | Infineon Technologies |
Description: SAF-C161S-LM 3V AA - LEGACY 16 BProgram Memory Type: ROMless Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Speed: 20MHz Mounting Type: Surface Mount Package / Case: 80-QFP DigiKey Programmable: Not Verified Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Core Size: 16-Bit Core Processor: C166 Number of I/O: 63 Part Status: Active Supplier Device Package: PG-MQFP-80-7 Peripherals: POR, PWM, WDT Connectivity: EBI/EMI, SPI, UART/USART Packaging: Bulk |
на замовлення 7472 шт: термін постачання 21-31 дні (днів) |
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IPB60R385CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB60R385CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
| CY8C20045-24LKXIT |
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Виробник: Infineon Technologies
Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BA89502VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
на замовлення 16350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5106+ | 4.65 грн |
| TLE4929CXHAM18NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLE4929CXHAM18NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.87 грн |
| 5+ | 183.87 грн |
| 10+ | 175.58 грн |
| 25+ | 155.49 грн |
| 50+ | 149.15 грн |
| 100+ | 143.36 грн |
| 500+ | 129.53 грн |
| IGI60F1414A1LAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IMC302AF064XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 475.79 грн |
| 10+ | 413.85 грн |
| 25+ | 394.56 грн |
| 100+ | 321.54 грн |
| IMC301AF064XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
на замовлення 1567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.03 грн |
| 10+ | 281.62 грн |
| 25+ | 260.10 грн |
| 100+ | 221.90 грн |
| 250+ | 211.32 грн |
| 500+ | 204.94 грн |
| SAF-XC886CM-6FFI 5V AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| ISC0603NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 50.59 грн |
| ISC0603NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 6987 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.54 грн |
| 10+ | 108.05 грн |
| 100+ | 84.25 грн |
| 500+ | 65.31 грн |
| 1000+ | 51.56 грн |
| 2000+ | 48.13 грн |
| ISC0602NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 44.75 грн |
| ISC0602NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 10539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.86 грн |
| 10+ | 83.28 грн |
| 100+ | 59.04 грн |
| 500+ | 45.27 грн |
| 1000+ | 41.96 грн |
| 2000+ | 40.44 грн |
| ISC0805NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 38.56 грн |
| 10000+ | 34.88 грн |
| ISC0805NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
на замовлення 10603 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.68 грн |
| 10+ | 89.77 грн |
| 100+ | 60.64 грн |
| 500+ | 45.20 грн |
| 1000+ | 41.44 грн |
| 2000+ | 39.71 грн |
| ISC0806NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC0806NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 4756 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.05 грн |
| 10+ | 142.23 грн |
| 100+ | 98.57 грн |
| 500+ | 75.02 грн |
| 1000+ | 69.40 грн |
| 2000+ | 65.95 грн |
| DD800S17H4_B2 |
![]() |
Виробник: Infineon Technologies
Description: DDXS17F - RECTIFIER DIODE MODULE
Description: DDXS17F - RECTIFIER DIODE MODULE
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 62091.80 грн |
| DD800S17HA_B2 |
![]() |
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 38759.33 грн |
| AUIRF7648M2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4800+ | 120.99 грн |
| AUIRF7648M2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 9399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 330.11 грн |
| 10+ | 210.21 грн |
| 100+ | 148.99 грн |
| 500+ | 115.31 грн |
| 1000+ | 109.34 грн |
| BAT54-04E6327 |
![]() |
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5602+ | 3.61 грн |
| BAT54-06E6327 |
![]() |
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
на замовлення 163000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5170+ | 4.65 грн |
| BAT54-05E6327 |
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Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 41151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5602+ | 3.87 грн |
| T3800N16TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| TLE4253EXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 18017 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.84 грн |
| 10+ | 73.05 грн |
| 25+ | 66.29 грн |
| 100+ | 55.23 грн |
| 250+ | 51.90 грн |
| 500+ | 49.89 грн |
| 1000+ | 48.57 грн |
| TLE4253GSXUMA4 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 45.66 грн |
| TLE4253GSXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE4253GSXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
товару немає в наявності
В кошику
од. на суму грн.
| BCR583E6327HTSA1 |
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на замовлення 521602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4418+ | 5.08 грн |
| IPLK80R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK80R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
на замовлення 1596 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.21 грн |
| 10+ | 94.99 грн |
| 100+ | 64.31 грн |
| 500+ | 48.01 грн |
| 1000+ | 44.05 грн |
| IPLK70R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK70R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
товару немає в наявності
В кошику
од. на суму грн.
| IPLK80R2K0P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK80R2K0P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPLK80R900P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
товару немає в наявності
В кошику
од. на суму грн.
| IPLK80R1K2P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK80R1K2P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPLK70R1K2P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK70R1K2P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику
од. на суму грн.
| IPLK70R1K4P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK70R1K4P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| REFXDPL8219U40WTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8178.38 грн |
| SIGC14T60SNCX1SA3 |
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Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BLOCKCHAINSTARTKITTOBO1 |
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Виробник: Infineon Technologies
Description: SECURITY 2 GO
Part Status: Active
Packaging: Box
Type: Near Field Communication (NFC)
Description: SECURITY 2 GO
Part Status: Active
Packaging: Box
Type: Near Field Communication (NFC)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4502.21 грн |
| IR35215MTRPBF |
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Виробник: Infineon Technologies
Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 278.16 грн |
| IR35215MTRPBF |
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Виробник: Infineon Technologies
Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 5227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 490.52 грн |
| 10+ | 363.78 грн |
| 25+ | 336.51 грн |
| 100+ | 287.71 грн |
| 250+ | 274.30 грн |
| 500+ | 266.23 грн |
| 1000+ | 255.33 грн |
| CY7C1370KV33-200AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 3 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 3 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.19 грн |
| 10+ | 437.58 грн |
| IPA075N15N3 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 39W (Tc)
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 39W (Tc)
на замовлення 527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 305.54 грн |
| IPA075N15N3G |
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Виробник: Infineon Technologies
Description: IPA075N15 - 12V-300V N-CHANNEL P
Description: IPA075N15 - 12V-300V N-CHANNEL P
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Мінімальне замовлення: 87 шт
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| IRFHM8363TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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| IPI075N15N3G |
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Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Description: OPTLMOS N-CHANNEL POWER MOSFET
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| IPI075N15N3 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| BSC120N12LSGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| BSC120N12LSGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 2367 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.81 грн |
| 10+ | 93.95 грн |
| 100+ | 76.66 грн |
| 500+ | 58.65 грн |
| CY8C4014LQI-SLT1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16QFN
Speed: 16MHz
Mounting Type: Surface Mount
Program Memory Size: 16KB (16K x 8)
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 12
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Description: IC MCU 32BIT 16KB FLASH 16QFN
Speed: 16MHz
Mounting Type: Surface Mount
Program Memory Size: 16KB (16K x 8)
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 12
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
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| SAF-C161SLM3VAAFXUMA1 |
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Виробник: Infineon Technologies
Description: SAF-C161S-LM 3V AA - LEGACY 16 B
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
DigiKey Programmable: Not Verified
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Packaging: Bulk
Description: SAF-C161S-LM 3V AA - LEGACY 16 B
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
DigiKey Programmable: Not Verified
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Packaging: Bulk
на замовлення 7472 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 308.70 грн |
| IPB60R385CPATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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| IPB60R385CPATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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