Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148586) > Сторінка 445 з 2477
Фото | Назва | Виробник | Інформація |
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FS800R07A2E3IB31BPSA1 | Infineon Technologies |
Description: IGBT MODULE MED PWR ECOHY2-1 Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BB914E6327HTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: PG-SOT23 Part Status: Active Voltage - Peak Reverse (Max): 18 V Capacitance Ratio: 2.42 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDW60C65D1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRB24427STR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-9 Rise / Fall Time (Typ): 33ns, 33ns (Max) Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
на замовлення 2283 шт: термін постачання 21-31 дні (днів) |
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IRHNA57260SE | Infineon Technologies | Description: IRHNA57260SE |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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1ED3123MC12HXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 13.5A, 14A Technology: Magnetic Coupling Current - Output High, Low: 13.5A, 14A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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1ED3123MC12HXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 13.5A, 14A Technology: Magnetic Coupling Current - Output High, Low: 13.5A, 14A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 5003 шт: термін постачання 21-31 дні (днів) |
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BGSF18DM20E6327XUMA1138 | Infineon Technologies |
![]() Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IMIC32V06X6SA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IMIC32V05X6SA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TDA88240AUMA1 | Infineon Technologies | Description: IFX POWERSTAGE/DRIVER PG-IQFN-30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1ED3120MC12HXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 1505 шт: термін постачання 21-31 дні (днів) |
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1ED3131MU12HXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1ED3131MU12HXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 915 шт: термін постачання 21-31 дні (днів) |
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1ED3121MU12HXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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1ED3121MU12HXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 1114 шт: термін постачання 21-31 дні (днів) |
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TLE75602EMHXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-SSOP-24-9 Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE75602EMDXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-SSOP-24-9 Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SAH-XC2237M-104F80LAAHXUMA1 | Infineon Technologies |
Description: IC MCU 16/32BT 832KB FLSH 64LQFP Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 832KB (832K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 110°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-13 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SAK-XC164CM-4F20FAA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 14x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-64-8 Part Status: Active Number of I/O: 47 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAK-XC888C-6FFI5VAC | Infineon Technologies |
Description: IC MCU 8BIT 24KB FLASH 64TQFP Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 24KB (24K x 8) RAM Size: 1.75K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TQFP-64 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSB2132HV2.2 | Infineon Technologies |
Description: SICOFI-TE TWO CHANNEL CODEC Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: CODEC Filter Interface: IOM-2 PCM, SPI Voltage - Supply: 5V Current - Supply: 18mA Supplier Device Package: P-MQFP-64 Part Status: Active Number of Circuits: 2 Power (Watts): 90 mW |
на замовлення 33825 шт: термін постачання 21-31 дні (днів) |
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TLE9832QXXUMA4 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE9832QVXUMA3 | Infineon Technologies |
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на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CY7C1480BV33-200AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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XC2297H136F80LABKXUMA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.088MB (1.088M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 40x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-176-12 Part Status: Active Number of I/O: 150 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE49681LHALA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Bipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 2.25mT Trip, -2.25mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 642 шт: термін постачання 21-31 дні (днів) |
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TLE49681LHALA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Tape & Box (TB) Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Bipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 2.25mT Trip, -2.25mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE49452LHALA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Tape & Box (TB) Output Type: Open Collector Polarization: North Pole, South Pole Function: Bipolar Switch Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3.8V ~ 24V Technology: Hall Effect Sensing Range: ±3mT Trip, ±6mT Release Current - Output (Max): 100mA Current - Supply (Max): 8mA Test Condition: 25°C Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FF600R12ME7B11BPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 35 µA Input Capacitance (Cies) @ Vce: 92 nF @ 25 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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1ED3131MC12HXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1ED3131MC12HXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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STT1900N16P55XPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BTS4880R | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C Output Configuration: High Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 11V ~ 45V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 625mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-36-12 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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T830N14TOFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 844 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 1.8 kV |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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PXC1331CPNG003XTMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER PG-VQFN-4 Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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CY4521 | Infineon Technologies |
![]() Packaging: Bulk Function: USB Type-C® Type: Interface Contents: Board(s), Cable(s), Power Supply Utilized IC / Part: CCG2 Supplied Contents: Board(s), Cable(s), Power Supply Secondary Attributes: On-Board LEDs Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRFH4255DTRPBF/BKN | Infineon Technologies | Description: IRFH4255DTRPBF/BKN |
на замовлення 1229 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
IRFHM4231TRPBF/BKN | Infineon Technologies | Description: IRFHM4231TRPBF/BKN |
на замовлення 404 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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BAS 16-02W E6327 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPS65R400CEAKMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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IPP65R145CFD7AAKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDDD08G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 401pF @ 1V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 27 µA @ 420 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDDD08G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 401pF @ 1V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 27 µA @ 420 V |
на замовлення 1813 шт: термін постачання 21-31 дні (днів) |
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IDDD12G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDDD12G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
на замовлення 1688 шт: термін постачання 21-31 дні (днів) |
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IDDD20G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 970pF @ 1V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 67 µA @ 420 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDDD20G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 970pF @ 1V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 67 µA @ 420 V |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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IDDD04G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 205pF @ 1V, 1MHz Current - Average Rectified (Io): 13A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 14 µA @ 420 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDDD04G65C6XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 205pF @ 1V, 1MHz Current - Average Rectified (Io): 13A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 14 µA @ 420 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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S70GL02GP11FAIR23 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Obsolete Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256M x 8, 128M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
P2000D45X168HPSA1 | Infineon Technologies |
Description: PRESS PACK IGBT BG-P16826K-1 Packaging: Tray Input: Standard Configuration: Single NTC Thermistor: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCR430UXTSA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Voltage - Output: 42V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: LED Lighting Current - Output / Channel: 100mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: PG-SOT23-6-1 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 42V Part Status: Active |
на замовлення 23212 шт: термін постачання 21-31 дні (днів) |
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IPB50N10S3L16ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB50N10S3L16ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPG20N10S436AATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
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BSC016N06NSSCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 234A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BGM7LLHM4L12E6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 12-XFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 700MHz ~ 2.7GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.3V Gain: 13dB Current - Supply: 4.5mA Supplier Device Package: TSLP-12-4 Part Status: Obsolete |
на замовлення 682500 шт: термін постачання 21-31 дні (днів) |
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IPB47N10S33ATMA1 | Infineon Technologies |
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на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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AUIRFR1010Z | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D-PAK (TO-252AA) Part Status: Active Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
FS800R07A2E3IB31BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE MED PWR ECOHY2-1
Packaging: Tray
Part Status: Obsolete
Description: IGBT MODULE MED PWR ECOHY2-1
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
BB914E6327HTSA1 |
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Виробник: Infineon Technologies
Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.42
Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.42
товару немає в наявності
В кошику
од. на суму грн.
IDW60C65D1 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Description: POWER FIELD-EFFECT TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
AUIRB24427STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
на замовлення 2283 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 413.03 грн |
10+ | 303.78 грн |
25+ | 280.36 грн |
100+ | 238.90 грн |
250+ | 227.36 грн |
500+ | 220.41 грн |
1000+ | 211.16 грн |
IRHNA57260SE |
Виробник: Infineon Technologies
Description: IRHNA57260SE
Description: IRHNA57260SE
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
1ED3123MC12HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 131.37 грн |
2000+ | 123.44 грн |
3000+ | 121.90 грн |
1ED3123MC12HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 13.5A, 14A
Technology: Magnetic Coupling
Current - Output High, Low: 13.5A, 14A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 5003 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 238.74 грн |
10+ | 172.35 грн |
25+ | 158.02 грн |
100+ | 133.52 грн |
250+ | 126.47 грн |
500+ | 122.22 грн |
IMIC32V06X6SA1 |
Виробник: Infineon Technologies
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
IMIC32V05X6SA1 |
Виробник: Infineon Technologies
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
TDA88240AUMA1 |
Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-30
Description: IFX POWERSTAGE/DRIVER PG-IQFN-30
товару немає в наявності
В кошику
од. на суму грн.
1ED3120MC12HXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 8KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGTL ISO 8KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 1505 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 210.89 грн |
10+ | 151.27 грн |
25+ | 138.46 грн |
100+ | 116.69 грн |
250+ | 110.35 грн |
500+ | 106.53 грн |
1ED3131MU12HXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
товару немає в наявності
В кошику
од. на суму грн.
1ED3131MU12HXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 183.83 грн |
10+ | 132.04 грн |
25+ | 120.74 грн |
100+ | 101.64 грн |
250+ | 96.08 грн |
500+ | 92.72 грн |
1ED3121MU12HXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 104.44 грн |
1ED3121MU12HXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 1114 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 193.38 грн |
10+ | 138.55 грн |
25+ | 126.66 грн |
100+ | 106.64 грн |
250+ | 100.80 грн |
500+ | 97.28 грн |
TLE75602EMHXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
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TLE75602EMDXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Obsolete
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SAH-XC2237M-104F80LAAHXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 16/32BT 832KB FLSH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 110°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BT 832KB FLSH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 110°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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SAK-XC164CM-4F20FAA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
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SAK-XC888C-6FFI5VAC |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 24KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
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PSB2132HV2.2 |
Виробник: Infineon Technologies
Description: SICOFI-TE TWO CHANNEL CODEC
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 18mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 2
Power (Watts): 90 mW
Description: SICOFI-TE TWO CHANNEL CODEC
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 18mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 2
Power (Watts): 90 mW
на замовлення 33825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
54+ | 400.29 грн |
TLE9832QXXUMA4 |
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Виробник: Infineon Technologies
Description: TLE9832 - MICROCONTROLLER WITH L
Description: TLE9832 - MICROCONTROLLER WITH L
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TLE9832QVXUMA3 |
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Виробник: Infineon Technologies
Description: TLE9832 - SMART LIN-BASED RELAY
Description: TLE9832 - SMART LIN-BASED RELAY
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
CY7C1480BV33-200AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 17 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 5148.89 грн |
XC2297H136F80LABKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 1.088MB FL 176QFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 1.088MB FL 176QFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
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TLE49681LHALA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 642 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 94.70 грн |
5+ | 77.55 грн |
10+ | 72.27 грн |
25+ | 61.79 грн |
50+ | 57.61 грн |
100+ | 53.69 грн |
500+ | 44.82 грн |
TLE49681LHALA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MAGNETIC SWITCH BIPOLAR SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLE49452LHALA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
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FF600R12ME7B11BPSA2 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-741
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
Description: MEDIUM POWER ECONO AG-ECONOD-741
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12914.40 грн |
1ED3131MC12HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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1ED3131MC12HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 194.18 грн |
10+ | 139.55 грн |
25+ | 127.70 грн |
100+ | 107.60 грн |
250+ | 101.76 грн |
500+ | 98.24 грн |
STT1900N16P55XPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE POWERBLOCK PS55-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
Description: SCR MODULE POWERBLOCK PS55-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
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BTS4880R |
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Виробник: Infineon Technologies
Description: BTS4880 - PROFET - SMART HIGH SI
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: BTS4880 - PROFET - SMART HIGH SI
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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T830N14TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 18 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 11198.63 грн |
18+ | 9575.36 грн |
PXC1331CPNG003XTMA1 |
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 178.93 грн |
CY4521 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4547.26 грн |
IRFH4255DTRPBF/BKN |
Виробник: Infineon Technologies
Description: IRFH4255DTRPBF/BKN
Description: IRFH4255DTRPBF/BKN
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
IRFHM4231TRPBF/BKN |
Виробник: Infineon Technologies
Description: IRFHM4231TRPBF/BKN
Description: IRFHM4231TRPBF/BKN
на замовлення 404 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BAS 16-02W E6327 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SCD80-2
Description: DIODE GEN PURP 80V 200MA SCD80-2
товару немає в наявності
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IPS65R400CEAKMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
567+ | 37.88 грн |
IPP65R145CFD7AAKSA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
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IDDD08G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
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IDDD08G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
на замовлення 1813 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 287.29 грн |
10+ | 180.55 грн |
100+ | 126.93 грн |
500+ | 105.73 грн |
IDDD12G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
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од. на суму грн.
IDDD12G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 381.99 грн |
IDDD20G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
товару немає в наявності
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од. на суму грн.
IDDD20G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
на замовлення 410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 549.90 грн |
10+ | 363.40 грн |
100+ | 265.21 грн |
IDDD04G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
товару немає в наявності
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од. на суму грн.
IDDD04G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 197.36 грн |
10+ | 115.18 грн |
100+ | 83.45 грн |
S70GL02GP11FAIR23 |
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Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
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P2000D45X168HPSA1 |
Виробник: Infineon Technologies
Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
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BCR430UXTSA2 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
на замовлення 23212 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.47 грн |
19+ | 16.94 грн |
25+ | 15.08 грн |
100+ | 12.18 грн |
250+ | 11.25 грн |
500+ | 10.69 грн |
1000+ | 10.06 грн |
IPB50N10S3L16ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
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IPB50N10S3L16ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
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IPG20N10S436AATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 36.57 грн |
10000+ | 34.74 грн |
BSC016N06NSSCATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
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BGM7LLHM4L12E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
на замовлення 682500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
211+ | 104.24 грн |
IPB47N10S33ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
Description: MOSFET N-CH 100V 47A TO263-3
на замовлення 446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
311+ | 73.37 грн |
AUIRFR1010Z |
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Виробник: Infineon Technologies
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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од. на суму грн.