Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126755) > Сторінка 445 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SHIELDBTS500251TEATOBO1 | Infineon Technologies |
Description: SHIELD_BTS50025-1TEAPart Status: Active Platform: Arduino Utilized IC / Part: BTS50025-1TEA Contents: Board(s) Type: Power Management Function: Switch Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3V @ 130µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 435A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3V @ 130µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 435A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS127IXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSS127IXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 4798 шт: термін постачання 21-31 дні (днів) |
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BTS244ZE3062ANTMA1 | Infineon Technologies |
Description: BTS244 - TEMPFET, AUTOMOTIVE LOWInput Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO263-5-2 Vgs(th) (Max) @ Id: 2V @ 130µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Packaging: Bulk |
на замовлення 24500 шт: термін постачання 21-31 дні (днів) |
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IR3513MTRPBF | Infineon Technologies |
Description: IC XPHASE3 CONTROL 32-MLPQSupplier Device Package: 32-MLPQ (5x5) Current - Supply: 3mA Applications: Processor Voltage - Supply: 8V ~ 16V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2860 шт: термін постачання 21-31 дні (днів) |
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AUIR3242SBOARDB2BTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR AUIR3242SPackaging: Bulk Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: AUIR3242S Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) Secondary Attributes: On-Board Test Points |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| EVALM3CM615PNTOBO2 | Infineon Technologies | Description: EVAL BOARD FOR IFCM15P60GD |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| BCR119SH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPart Status: Active Supplier Device Package: PG-SOT363-6-1 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BCR119S | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPart Status: Active Supplier Device Package: PG-SOT363-6-1 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCR119SH6327XTSA1 | Infineon Technologies |
Description: TRANS 2NPN PREBIAS 0.25W SOT363Part Status: Last Time Buy Supplier Device Package: PG-SOT363-PO Resistor - Base (R1): 4.7kOhms Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
на замовлення 17800 шт: термін постачання 21-31 дні (днів) |
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BCR 114T E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW SC75 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR 114L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW TSLP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR 114F E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW TSFP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20045-24LKXIT | Infineon Technologies |
Description: IC CAPSENSE 8K FLASH 16 QFNDigiKey Programmable: Not Verified Supplier Device Package: 16-QFN (3x3) Core Processor: M8C Applications: Capacitive Sensing Controller Series: CY8C20045 Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| BA89502VH6327XTSA1 | Infineon Technologies |
Description: DIODE GEN PURP SC79-2Part Status: Obsolete Packaging: Bulk |
на замовлення 16350 шт: термін постачання 21-31 дні (днів) |
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TLE4929CXHAM18NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSSupplier Device Package: PG-SSO-3-53 Current - Supply (Max): 13.4mA Current - Output (Max): 15mA Sensing Range: ±120mT Resolution: 16 b Technology: Hall Effect Voltage - Supply: 4V ~ 16V Operating Temperature: -40°C ~ 175°C (TJ) Axis: Single Mounting Type: Through Hole Output Type: Open Drain Package / Case: 3-SSIP Module Features: Programmable, Temperature Compensated Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE4929CXHAM18NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackage / Case: 3-SSIP Module Features: Programmable, Temperature Compensated Packaging: Cut Tape (CT) Supplier Device Package: PG-SSO-3-53 Current - Supply (Max): 13.4mA Current - Output (Max): 15mA Sensing Range: ±120mT Resolution: 16 b Technology: Hall Effect Voltage - Supply: 4V ~ 16V Operating Temperature: -40°C ~ 175°C (TJ) Axis: Single Mounting Type: Through Hole Output Type: Open Drain |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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IGI60F1414A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 28TIQFNPart Status: Active Load Type: Inductive, Resistive Supplier Device Package: PG-TIQFN-28-1 Applications: General Purpose Rds On (Typ): 140mOhm LS, 140mOhm HS Output Configuration: Half Bridge (2) Interface: Logic, PWM Mounting Type: Surface Mount Package / Case: 28-PowerTQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMC302AF064XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPDigiKey Programmable: Not Verified Number of I/O: 41 Supplier Device Package: 64-QFP (10x10) Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Cut Tape (CT) |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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IMC301AF064XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT Supplier Device Package: 64-QFP (10x10) Part Status: Active Number of I/O: 41 DigiKey Programmable: Not Verified |
на замовлення 1567 шт: термін постачання 21-31 дні (днів) |
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SAF-XC886CM-6FFI 5V AC | Infineon Technologies |
Description: IC MCU 8BIT 24KB FLASH 48TQFPOscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1.75K x 8 Program Memory Size: 24KB (24K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tape & Reel (TR) Number of I/O: 34 Part Status: Obsolete Supplier Device Package: PG-TQFP-48 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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ISC0603NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 12.3A/56A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 24µA Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC0603NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 12.3A/56A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 24µA Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 6987 шт: термін постачання 21-31 дні (днів) |
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ISC0602NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 14A/66A TDSON-8Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 29µA Power Dissipation (Max): 2.5W (Ta), 60W (Tc) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC0602NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 14A/66A TDSON-8Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 29µA Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 10539 шт: термін постачання 21-31 дні (днів) |
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ISC0805NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/71A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 40µA Supplier Device Package: PG-TDSON-8-46 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ISC0805NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/71A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 40µA Supplier Device Package: PG-TDSON-8-46 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 10503 шт: термін постачання 21-31 дні (днів) |
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ISC0806NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 16A/97A TDSONMounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 2.3V @ 61µA Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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ISC0806NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 16A/97A TDSONSupplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 2.3V @ 61µA Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 4756 шт: термін постачання 21-31 дні (днів) |
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| DD800S17H4_B2 | Infineon Technologies |
Description: DDXS17F - RECTIFIER DIODE MODULE |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
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| DD800S17HA_B2 | Infineon Technologies |
Description: RECTIFIER DIODE MODULEPackaging: Bulk |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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AUIRF7648M2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 14A DIRECTFETVgs(th) (Max) @ Id: 4.9V @ 150µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric M4 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: DirectFET™ Isometric M4 Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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AUIRF7648M2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 14A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: DirectFET™ Isometric M4 Vgs(th) (Max) @ Id: 4.9V @ 150µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric M4 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 9399 шт: термін постачання 21-31 дні (днів) |
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BAT54-04E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKY |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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| BAT54-06E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKYSpeed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23-3-3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Common Anode Technology: Schottky Reverse Recovery Time (trr): 5 ns |
на замовлення 163000 шт: термін постачання 21-31 дні (днів) |
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BAT54-05E6327 | Infineon Technologies |
Description: SCHOTTKY DIODECurrent - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23-3-3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 41151 шт: термін постачання 21-31 дні (днів) |
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T3800N16TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 5970A TO-200AEVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 5970 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 3800 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: 135°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-200AE Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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TLE4253EXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSO-27Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-27 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 18017 шт: термін постачання 21-31 дні (днів) |
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TLE4253GSXUMA4 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE4253GSXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8Voltage - Output (Min/Fixed): Tracking Supplier Device Package: PG-DSO-8 Number of Regulators: 1 Voltage - Input (Max): 40V Qualification: AEC-Q100 Current - Supply (Max): 15 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 200mA PSRR: 60dB (100Hz) Grade: Automotive Control Features: Enable Current - Quiescent (Iq): 150 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 250mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE4253GSXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 150 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 250mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Grade: Automotive Control Features: Enable Voltage - Output (Min/Fixed): Tracking Supplier Device Package: PG-DSO-8 Qualification: AEC-Q100 Current - Supply (Max): 15 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 200mA PSRR: 60dB (100Hz) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR583E6327HTSA1 | Infineon Technologies |
Description: TRANS PREBIASPackaging: Bulk |
на замовлення 521602 шт: термін постачання 21-31 дні (днів) |
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IPLK80R750P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK80R750P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 |
на замовлення 1596 шт: термін постачання 21-31 дні (днів) |
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IPLK70R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK70R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK80R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK80R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK80R900P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-TDSON-8 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK80R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK80R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TDSON-8 Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K4P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IPLK70R1K4P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Drain to Source Voltage (Vdss): 700 V Part Status: Active Supplier Device Package: PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFXDPL8219U40WTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR XDPL8219Packaging: Bulk Voltage - Output: 54V Current - Output / Channel: 800mA Utilized IC / Part: XDPL8219 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| SIGC14T60SNCX1SA3 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFERCurrent - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Test Condition: 400V, 15A, 21Ohm, 15V Td (on/off) @ 25°C: 31ns/261ns IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BLOCKCHAINSTARTKITTOBO1 | Infineon Technologies |
Description: SECURITY 2 GOPart Status: Active Packaging: Box Type: Near Field Communication (NFC) |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| SHIELDBTS500251TEATOBO1 |
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Виробник: Infineon Technologies
Description: SHIELD_BTS50025-1TEA
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTS50025-1TEA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
Description: SHIELD_BTS50025-1TEA
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTS50025-1TEA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4551.41 грн |
| IAUA250N04S6N007AUMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IAUA250N04S6N007AUMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BSS127IXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.57 грн |
| BSS127IXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 4798 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.17 грн |
| 20+ | 15.50 грн |
| 50+ | 11.13 грн |
| 100+ | 9.12 грн |
| 500+ | 6.76 грн |
| BTS244ZE3062ANTMA1 |
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Виробник: Infineon Technologies
Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 670+ | 35.68 грн |
| IR3513MTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CONTROL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC XPHASE3 CONTROL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.49 грн |
| 10+ | 230.90 грн |
| 25+ | 216.55 грн |
| 100+ | 192.93 грн |
| AUIR3242SBOARDB2BTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11516.50 грн |
| EVALM3CM615PNTOBO2 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IFCM15P60GD
Description: EVAL BOARD FOR IFCM15P60GD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8847.50 грн |
| BCR119SH6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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| BCR119S |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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| BCR119SH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
на замовлення 17800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5352+ | 4.54 грн |
| BCR 114T E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Description: TRANS PREBIAS NPN 250MW SC75
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| BCR 114L3 E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Description: TRANS PREBIAS NPN 250MW TSLP-3
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| BCR 114F E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
Description: TRANS PREBIAS NPN 250MW TSFP-3
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| CY8C20045-24LKXIT |
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Виробник: Infineon Technologies
Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BA89502VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
на замовлення 16350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5106+ | 4.76 грн |
| TLE4929CXHAM18NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
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| TLE4929CXHAM18NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.85 грн |
| 5+ | 188.14 грн |
| 10+ | 179.67 грн |
| 25+ | 159.11 грн |
| 50+ | 152.62 грн |
| 100+ | 146.69 грн |
| 500+ | 132.54 грн |
| IGI60F1414A1LAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
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| IMC302AF064XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 486.86 грн |
| 10+ | 423.47 грн |
| 25+ | 403.74 грн |
| 100+ | 329.01 грн |
| IMC301AF064XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
на замовлення 1567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 390.91 грн |
| 10+ | 288.17 грн |
| 25+ | 266.15 грн |
| 100+ | 227.06 грн |
| 250+ | 216.23 грн |
| 500+ | 209.71 грн |
| SAF-XC886CM-6FFI 5V AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| ISC0603NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 51.77 грн |
| ISC0603NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 6987 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.45 грн |
| 10+ | 110.56 грн |
| 100+ | 86.21 грн |
| 500+ | 66.83 грн |
| 1000+ | 52.76 грн |
| 2000+ | 49.25 грн |
| ISC0602NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 45.79 грн |
| ISC0602NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 10539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.83 грн |
| 10+ | 85.21 грн |
| 100+ | 60.41 грн |
| 500+ | 46.33 грн |
| 1000+ | 42.94 грн |
| 2000+ | 41.38 грн |
| ISC0805NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 41.73 грн |
| ISC0805NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
на замовлення 10503 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.07 грн |
| 10+ | 91.63 грн |
| 50+ | 69.16 грн |
| 100+ | 58.09 грн |
| 500+ | 46.14 грн |
| ISC0806NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC0806NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 4756 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.33 грн |
| 10+ | 145.53 грн |
| 100+ | 100.87 грн |
| 500+ | 76.76 грн |
| 1000+ | 71.02 грн |
| 2000+ | 67.49 грн |
| DD800S17H4_B2 |
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Виробник: Infineon Technologies
Description: DDXS17F - RECTIFIER DIODE MODULE
Description: DDXS17F - RECTIFIER DIODE MODULE
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 63535.80 грн |
| DD800S17HA_B2 |
![]() |
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 39660.71 грн |
| AUIRF7648M2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4800+ | 123.80 грн |
| AUIRF7648M2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 9399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 337.79 грн |
| 10+ | 215.10 грн |
| 100+ | 152.45 грн |
| 500+ | 118.00 грн |
| 1000+ | 111.88 грн |
| BAT54-04E6327 |
![]() |
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5602+ | 3.70 грн |
| BAT54-06E6327 |
![]() |
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
на замовлення 163000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5170+ | 4.76 грн |
| BAT54-05E6327 |
![]() |
Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 41151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5602+ | 3.96 грн |
| T3800N16TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| TLE4253EXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 18017 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.25 грн |
| 10+ | 74.75 грн |
| 25+ | 67.83 грн |
| 100+ | 56.52 грн |
| 250+ | 53.11 грн |
| 500+ | 51.05 грн |
| 1000+ | 49.70 грн |
| TLE4253GSXUMA4 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 46.72 грн |
| TLE4253GSXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE4253GSXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
товару немає в наявності
В кошику
од. на суму грн.
| BCR583E6327HTSA1 |
![]() |
на замовлення 521602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4418+ | 5.20 грн |
| IPLK80R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK80R750P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
на замовлення 1596 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.79 грн |
| 10+ | 97.20 грн |
| 100+ | 65.80 грн |
| 500+ | 49.13 грн |
| 1000+ | 45.07 грн |
| IPLK70R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK70R750P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
товару немає в наявності
В кошику
од. на суму грн.
| IPLK80R2K0P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK80R2K0P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPLK80R900P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
товару немає в наявності
В кошику
од. на суму грн.
| IPLK80R1K2P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK80R1K2P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPLK70R1K2P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK70R1K2P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику
од. на суму грн.
| IPLK70R1K4P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPLK70R1K4P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| REFXDPL8219U40WTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8368.57 грн |
| SIGC14T60SNCX1SA3 |
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Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BLOCKCHAINSTARTKITTOBO1 |
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Виробник: Infineon Technologies
Description: SECURITY 2 GO
Part Status: Active
Packaging: Box
Type: Near Field Communication (NFC)
Description: SECURITY 2 GO
Part Status: Active
Packaging: Box
Type: Near Field Communication (NFC)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4606.92 грн |






























