Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123023) > Сторінка 444 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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DF200R07W2H3B77BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-411Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V Current - Collector Cutoff (Max): 21 µA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-EASY2B NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| S2GO_CUR-SENSE_TLI4971 | Infineon Technologies |
Description: SENSOR BOARD |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
| TLI4971 MS2GO | Infineon Technologies |
Description: XENSIV MAG CUR SENSOR |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
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TLI4971A075T5E0001XUMA1 | Infineon Technologies |
Description: CURRENT SEN HE/OL 75A PG-TISONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Supplier Device Package: PG-TISON-8-1 Grade: Automotive Part Status: Active Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLI4971A075T5E0001XUMA1 | Infineon Technologies |
Description: CURRENT SEN HE/OL 75A PG-TISONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Supplier Device Package: PG-TISON-8-1 Grade: Automotive Part Status: Active Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 3589 шт: термін постачання 21-31 дні (днів) |
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TLI4971A025T5E0001XUMA1 | Infineon Technologies |
Description: CURRENT SENSOR HE/OL 25APackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 48mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 25A Grade: Automotive Part Status: Active Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 2649 шт: термін постачання 21-31 дні (днів) |
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TLI4971A075T5UE0001XUMA1 | Infineon Technologies |
Description: CURRENT SENSOR HE/OL 75APackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Grade: Automotive Part Status: Active Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLI4971A075T5UE0001XUMA1 | Infineon Technologies |
Description: CURRENT SENSOR HE/OL 75APackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2622 шт: термін постачання 21-31 дні (днів) |
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| FF225R12ME3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 325A 1150W Input Capacitance (Cies) @ Vce: 16 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 1150 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 325 A Part Status: Not For New Designs IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A Operating Temperature: -40°C ~ 125°C Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||
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DEMODISTANCE2GOLTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT24LTR11N16Utilized IC / Part: BGT24LTR11N16 Contents: Board(s) Part Status: Active Supplied Contents: Board(s) Type: Transceiver Frequency: 24GHz For Use With/Related Products: BGT24LTR11N16 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF6716MTRPBF | Infineon Technologies |
Description: IRF6716 - 12V-300V N-CHANNEL POWInput Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DIRECTFET™ MX Vgs(th) (Max) @ Id: 2.4V @ 100µA Power Dissipation (Max): 3.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Packaging: Bulk |
на замовлення 89960 шт: термін постачання 21-31 дні (днів) |
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BFP640FESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4.7V 46GHZ 4-TSFPPart Status: Active Supplier Device Package: 4-TSFP Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz Frequency - Transition: 46GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Voltage - Collector Emitter Breakdown (Max): 4.7V Current - Collector (Ic) (Max): 50mA Power - Max: 200mW Gain: 8B ~ 30.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPI072N10N3G | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CY8C5866LTI-LP022 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 68QFNPackaging: Bulk Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 1x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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CY8C5248LTI-030 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x12b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Obsolete Number of I/O: 36 |
на замовлення 517 шт: термін постачання 21-31 дні (днів) |
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BSC077N12NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 13.4/98A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V |
на замовлення 6343 шт: термін постачання 21-31 дні (днів) |
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IPI147N12N3GAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 56A TO262-3Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 61µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V |
на замовлення 920 шт: термін постачання 21-31 дні (днів) |
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| TLE6228GPNT | Infineon Technologies | Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE6228GPAUMA1 | Infineon Technologies | Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPD70P04P409ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 73A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IPD70P04P409ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 73A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3260 шт: термін постачання 21-31 дні (днів) |
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IPB180P04P403ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 180A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB180P04P403ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 180A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1619 шт: термін постачання 21-31 дні (днів) |
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CY8C4146LQI-S423 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 40QFNPackaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Number of I/O: 34 DigiKey Programmable: Not Verified |
на замовлення 4232 шт: термін постачання 21-31 дні (днів) |
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IPD60R460CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9.1A TO252-3 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC019N04NM5ATMA1 | Infineon Technologies |
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 50µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC019N04NM5ATMA1 | Infineon Technologies |
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 50µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
на замовлення 10433 шт: термін постачання 21-31 дні (днів) |
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DDB6U145N16LHOSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1600VCurrent - Reverse Leakage @ Vr: 5 mA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Technology: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Diode Configuration: 3 Independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C20466A-24LQXI | Infineon Technologies |
Description: IC CAPSENSE PSOC 32K 32QFNNumber of I/O: 28 Supplier Device Package: 32-QFN (5x5) Core Processor: M8C Applications: Capacitive Sensing Program Memory Type: FLASH (32kB) Controller Series: CY8C20xx6A Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C RAM Size: 2K x 8 Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
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CY8C3445LTI-079 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFNPackaging: Bulk DigiKey Programmable: Not Verified Number of I/O: 38 Supplier Device Package: 68-QFN (8x8) Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 2x8b Core Processor: 8051 EEPROM Size: 1K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 50MHz Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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IRS2890DSPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 85ns, 30ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 220mA, 480mA DigiKey Programmable: Not Verified |
на замовлення 5460 шт: термін постачання 21-31 дні (днів) |
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| ACCESSORY21392NOSA1 | Infineon Technologies |
Description: ACCESSORY 21392NOSA1 Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IKFW40N65DH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 53A HSIP247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 64 ns Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/105ns Switching Energy: 1.17mJ (on), 500µJ (off) Test Condition: 400V, 40A, 14Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 53 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 106 W |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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SPD03N60C3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SPD03N60C3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 17082 шт: термін постачання 21-31 дні (днів) |
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IMZA65R057M1HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET, PG-TO247Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +20V, -2V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO247-4-3 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQE050N08NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE050N08NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
на замовлення 529 шт: термін постачання 21-31 дні (днів) |
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IQE065N10NM5ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 48µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE065N10NM5ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 48µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
на замовлення 6198 шт: термін постачання 21-31 дні (днів) |
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ISC022N10NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 254W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ISC022N10NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 254W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V |
на замовлення 12134 шт: термін постачання 21-31 дні (днів) |
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IQE008N03LM5ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-TSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE008N03LM5ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-TSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC019N08NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 28A/237A TSON-8Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSON-8-3 Vgs(th) (Max) @ Id: 3.8V @ 146µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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BSC019N08NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 28A/237A TSON-8Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSON-8-3 Vgs(th) (Max) @ Id: 3.8V @ 146µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4866 шт: термін постачання 21-31 дні (днів) |
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ISC009N06LM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 41A/348A TSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC009N06LM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 41A/348A TSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
на замовлення 2223 шт: термін постачання 21-31 дні (днів) |
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TLE9251VLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGTSON81Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 30 mV Duplex: Half Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE9251VLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGTSON81Packaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 30 mV Duplex: Half Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12552 шт: термін постачання 21-31 дні (днів) |
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TLE9250VLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE9250VLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Packaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 15180 шт: термін постачання 21-31 дні (днів) |
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TLE8457CLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Packaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LIN Supplier Device Package: PG-TSON-8-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2964 шт: термін постачання 21-31 дні (днів) |
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| TLE8457ALEXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8Part Status: Active Receiver Hysteresis: 200 mV Supplier Device Package: PG-TSON-8-1 Protocol: LIN Number of Drivers/Receivers: 1/1 Voltage - Supply: 3V ~ 28V, 5.5V ~ 40V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY96384RSCPMC-GS-134E2-ND | Infineon Technologies |
Description: IC MCU 16BIT 128KB MROM 120LQFP Packaging: Tray Package / Case: 120-LQFP Mounting Type: Surface Mount Speed: 56MHz Program Memory Size: 128KB (128K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: Mask ROM Core Processor: F²MC-16FX Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT Supplier Device Package: 120-LQFP (16x16) Part Status: Obsolete Number of I/O: 96 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MB91213APMC-GS-134K5E1 | Infineon Technologies |
Description: IC MCU 32BIT 544KB MROM 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 544KB (544K x 8) RAM Size: 24K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: FR60Lite RISC Data Converters: A/D 32x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, SPI, UART/USART Peripherals: DMA, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Obsolete Number of I/O: 118 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY96F385RSBPMC-GS134UJE2 | Infineon Technologies |
Description: IC MCU 16BIT 160KB FLASH 120LQFPPackaging: Tray Package / Case: 120-LQFP Mounting Type: Surface Mount Speed: 56MHz Program Memory Size: 160KB (160K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: F²MC-16FX Data Converters: A/D 16x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT Supplier Device Package: 120-LQFP (16x16) Part Status: Discontinued at Digi-Key Number of I/O: 94 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MB91248PFV-GS-134K5E1 | Infineon Technologies |
Description: IC MCU 32BIT 256KB MROM 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: FR60Lite RISC Data Converters: A/D 32x8/10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, LINbus, UART/USART Peripherals: DMA, LCD, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Obsolete Number of I/O: 120 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TD5116F-TDA5220_868_10 | Infineon Technologies |
Description: DEV KIT Packaging: Bulk For Use With/Related Products: TDA5220, TDK5116F Frequency: 868MHz Type: Transmitter, Receiver Supplied Contents: Board(s) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLE5041PLUSCXAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-53 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 4.5V ~ 20V Technology: Magnetoresistive Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-53 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| DF200R07W2H3B77BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-411
Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V
Current - Collector Cutoff (Max): 21 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LOW POWER EASY AG-EASY2B-411
Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V
Current - Collector Cutoff (Max): 21 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4175.98 грн |
| S2GO_CUR-SENSE_TLI4971 |
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Виробник: Infineon Technologies
Description: SENSOR BOARD
Description: SENSOR BOARD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| TLI4971 MS2GO |
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Виробник: Infineon Technologies
Description: XENSIV MAG CUR SENSOR
Description: XENSIV MAG CUR SENSOR
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| TLI4971A075T5E0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SEN HE/OL 75A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Description: CURRENT SEN HE/OL 75A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 180.85 грн |
| TLI4971A075T5E0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SEN HE/OL 75A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Description: CURRENT SEN HE/OL 75A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 3589 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.29 грн |
| 5+ | 242.52 грн |
| 10+ | 231.92 грн |
| 25+ | 205.86 грн |
| 50+ | 197.80 грн |
| 100+ | 190.42 грн |
| 500+ | 172.70 грн |
| 1000+ | 167.26 грн |
| TLI4971A025T5E0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SENSOR HE/OL 25A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Description: CURRENT SENSOR HE/OL 25A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 2649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.04 грн |
| 5+ | 222.07 грн |
| 10+ | 212.37 грн |
| 25+ | 188.41 грн |
| 50+ | 180.95 грн |
| 100+ | 174.13 грн |
| 500+ | 157.77 грн |
| 1000+ | 152.74 грн |
| TLI4971A075T5UE0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SENSOR HE/OL 75A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Description: CURRENT SENSOR HE/OL 75A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 184.22 грн |
| TLI4971A075T5UE0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SENSOR HE/OL 75A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: CURRENT SENSOR HE/OL 75A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.94 грн |
| 5+ | 246.70 грн |
| 10+ | 236.10 грн |
| 25+ | 209.58 грн |
| 50+ | 201.40 грн |
| 100+ | 193.90 грн |
| 500+ | 175.89 грн |
| 1000+ | 170.36 грн |
| FF225R12ME3BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 325A 1150W
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 325 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 325A 1150W
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 325 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| DEMODISTANCE2GOLTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT24LTR11N16
Utilized IC / Part: BGT24LTR11N16
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver
Frequency: 24GHz
For Use With/Related Products: BGT24LTR11N16
Packaging: Bulk
Description: EVAL BOARD FOR BGT24LTR11N16
Utilized IC / Part: BGT24LTR11N16
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver
Frequency: 24GHz
For Use With/Related Products: BGT24LTR11N16
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IRF6716MTRPBF |
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Виробник: Infineon Technologies
Description: IRF6716 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Description: IRF6716 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
на замовлення 89960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 216+ | 92.40 грн |
| BFP640FESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Frequency - Transition: 46GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Gain: 8B ~ 30.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Frequency - Transition: 46GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Gain: 8B ~ 30.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IPI072N10N3G |
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Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 197+ | 102.40 грн |
| CY8C5866LTI-LP022 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 1118.97 грн |
| CY8C5248LTI-030 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
на замовлення 517 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 860.15 грн |
| BSC077N12NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
на замовлення 6343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.10 грн |
| 10+ | 152.97 грн |
| 100+ | 106.43 грн |
| 500+ | 81.21 грн |
| 1000+ | 80.16 грн |
| IPI147N12N3GAKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 56A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Description: MOSFET N-CH 120V 56A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 307+ | 72.40 грн |
| TLE6228GPNT |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
товару немає в наявності
В кошику
од. на суму грн.
| TLE6228GPAUMA1 |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
товару немає в наявності
В кошику
од. на суму грн.
| IPD70P04P409ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 37.91 грн |
| IPD70P04P409ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.61 грн |
| 10+ | 83.20 грн |
| 100+ | 55.97 грн |
| 500+ | 41.58 грн |
| 1000+ | 38.06 грн |
| IPB180P04P403ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 104.59 грн |
| IPB180P04P403ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.01 грн |
| 10+ | 187.67 грн |
| 100+ | 132.07 грн |
| 500+ | 104.51 грн |
| CY8C4146LQI-S423 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 4232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.87 грн |
| 10+ | 177.60 грн |
| 25+ | 163.06 грн |
| 100+ | 138.05 грн |
| 490+ | 126.72 грн |
| 980+ | 123.16 грн |
| 1470+ | 119.39 грн |
| 2940+ | 116.82 грн |
| IPD60R460CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO252-3
Description: MOSFET N-CH 600V 9.1A TO252-3
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| ISC019N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 24.58 грн |
| ISC019N04NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
на замовлення 10433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 60.59 грн |
| 100+ | 40.18 грн |
| 500+ | 29.49 грн |
| 1000+ | 26.84 грн |
| 2000+ | 24.62 грн |
| DDB6U145N16LHOSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Technology: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Diode Configuration: 3 Independent
Description: DIODE MODULE GP 1600V
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Technology: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Diode Configuration: 3 Independent
товару немає в наявності
В кошику
од. на суму грн.
| CY8C20466A-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENSE PSOC 32K 32QFN
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 32K 32QFN
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.74 грн |
| 10+ | 82.31 грн |
| 25+ | 76.38 грн |
| 100+ | 64.01 грн |
| CY8C3445LTI-079 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 592.03 грн |
| IRS2890DSPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
на замовлення 5460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 159+ | 124.47 грн |
| ACCESSORY21392NOSA1 |
Виробник: Infineon Technologies
Description: ACCESSORY 21392NOSA1
Packaging: Tray
Part Status: Obsolete
Description: ACCESSORY 21392NOSA1
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IKFW40N65DH5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 53A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 1.17mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 14Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
Description: IGBT TRENCH FS 650V 53A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 1.17mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 14Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 490.52 грн |
| 30+ | 267.79 грн |
| 120+ | 222.76 грн |
| SPD03N60C3ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.75 грн |
| 5000+ | 29.64 грн |
| SPD03N60C3ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 17082 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.28 грн |
| 10+ | 81.71 грн |
| 100+ | 54.94 грн |
| 500+ | 40.78 грн |
| 1000+ | 37.32 грн |
| IMZA65R057M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IQE050N08NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQE050N08NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
на замовлення 529 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.15 грн |
| 10+ | 144.39 грн |
| 100+ | 100.29 грн |
| 500+ | 76.43 грн |
| IQE065N10NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 67.73 грн |
| IQE065N10NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
на замовлення 6198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.92 грн |
| 10+ | 144.69 грн |
| 100+ | 100.41 грн |
| 500+ | 76.49 грн |
| 1000+ | 74.92 грн |
| ISC022N10NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 132.47 грн |
| ISC022N10NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
на замовлення 12134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.31 грн |
| 10+ | 230.65 грн |
| 100+ | 196.69 грн |
| 500+ | 135.76 грн |
| IQE008N03LM5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Description: TRENCH <= 40V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQE008N03LM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Description: TRENCH <= 40V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| BSC019N08NS5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| BSC019N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4866 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 363.43 грн |
| 10+ | 232.37 грн |
| 100+ | 165.70 грн |
| 500+ | 128.80 грн |
| 1000+ | 124.39 грн |
| ISC009N06LM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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Мінімальне замовлення: 5000 шт
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| ISC009N06LM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 2223 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 445.57 грн |
| 10+ | 286.10 грн |
| 100+ | 204.86 грн |
| 500+ | 159.74 грн |
| 1000+ | 149.44 грн |
| TLE9251VLEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 51.21 грн |
| 10000+ | 48.38 грн |
| TLE9251VLEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12552 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.16 грн |
| 10+ | 74.32 грн |
| 25+ | 67.46 грн |
| 100+ | 56.22 грн |
| 250+ | 52.83 грн |
| 500+ | 50.80 грн |
| 1000+ | 49.48 грн |
| TLE9250VLEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 45.75 грн |
| 10000+ | 43.21 грн |
| TLE9250VLEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 10+ | 66.64 грн |
| 25+ | 60.44 грн |
| 100+ | 50.32 грн |
| 250+ | 47.26 грн |
| 500+ | 45.42 грн |
| 1000+ | 43.19 грн |
| 2500+ | 41.61 грн |
| TLE8457CLEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2964 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 70.22 грн |
| 25+ | 63.70 грн |
| 100+ | 53.08 грн |
| 250+ | 49.89 грн |
| 500+ | 47.96 грн |
| 1000+ | 45.62 грн |
| 2500+ | 43.97 грн |
| TLE8457ALEXUMA2 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LIN
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 28V, 5.5V ~ 40V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LIN
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 28V, 5.5V ~ 40V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
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| CY96384RSCPMC-GS-134E2-ND |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 96
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB MROM 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 96
DigiKey Programmable: Not Verified
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| MB91213APMC-GS-134K5E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 118
Description: IC MCU 32BIT 544KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 118
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| CY96F385RSBPMC-GS134UJE2 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Discontinued at Digi-Key
Number of I/O: 94
Description: IC MCU 16BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Discontinued at Digi-Key
Number of I/O: 94
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| MB91248PFV-GS-134K5E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
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| TD5116F-TDA5220_868_10 |
Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: TDA5220, TDK5116F
Frequency: 868MHz
Type: Transmitter, Receiver
Supplied Contents: Board(s)
Part Status: Active
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: TDA5220, TDK5116F
Frequency: 868MHz
Type: Transmitter, Receiver
Supplied Contents: Board(s)
Part Status: Active
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| TLE5041PLUSCXAMA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Magnetoresistive
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Magnetoresistive
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 1500 шт
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