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IPD100N06S403ATMA2 IPD100N06S403ATMA2 Infineon Technologies INFNS14378-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+67.04 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYW4329HKUBGT Infineon Technologies BCM4329_RevF_Sep19,2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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CYW4329FKUBGT Infineon Technologies BCM4329_RevF_Sep19,2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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CYW4325GKWBGT Infineon Technologies BCM4325_RevE_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4330FKUBGT Infineon Technologies CYW4330FKUBGT_Web.pdf Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW4330XKUBGT Infineon Technologies BCM4330_RevE_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20740A2KMLG Infineon Technologies Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
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IPTG007N06NM5ATMA1 IPTG007N06NM5ATMA1 Infineon Technologies Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+226.18 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTG007N06NM5ATMA1 IPTG007N06NM5ATMA1 Infineon Technologies Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 2535 шт:
термін постачання 21-31 дні (днів)
1+506.84 грн
10+325.62 грн
100+266.60 грн
В кошику  од. на суму  грн.
ISZ080N10NM6ATMA1 ISZ080N10NM6ATMA1 Infineon Technologies Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5 Description: TRENCH >=100V PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
товару немає в наявності
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ISZ080N10NM6ATMA1 ISZ080N10NM6ATMA1 Infineon Technologies Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5 Description: TRENCH >=100V PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 4536 шт:
термін постачання 21-31 дні (днів)
3+159.88 грн
10+100.07 грн
100+73.17 грн
500+52.90 грн
1000+47.23 грн
2000+45.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 Infineon Technologies Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 Infineon Technologies Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 3378 шт:
термін постачання 21-31 дні (днів)
3+159.88 грн
10+102.30 грн
100+70.28 грн
500+52.68 грн
1000+47.20 грн
2000+44.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC060N10NM6ATMA1 ISC060N10NM6ATMA1 Infineon Technologies Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3 Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+61.97 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC060N10NM6ATMA1 ISC060N10NM6ATMA1 Infineon Technologies Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3 Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 15073 шт:
термін постачання 21-31 дні (днів)
2+173.07 грн
10+118.96 грн
100+88.36 грн
500+68.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FZ3600R12HP4PHPSA1 FZ3600R12HP4PHPSA1 Infineon Technologies Description: IGBT MOD 1200V 4930A AGIHMB190-2
товару немає в наявності
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DDB6U104N16RRB37BPSA1 DDB6U104N16RRB37BPSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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DDB6U104N16RRBPSA1 DDB6U104N16RRBPSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+5439.24 грн
В кошику  од. на суму  грн.
DDB6U84N16RRBPSA1 DDB6U84N16RRBPSA1 Infineon Technologies Infineon-DDB6U84N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f59252b3 Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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F3L400R07W3S5B59BPSA1 F3L400R07W3S5B59BPSA1 Infineon Technologies Infineon-F3L400R07W3S5_B59-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef605751310 Description: IGBT MODULE 650V 255A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.13V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 255 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 19 µA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+6933.39 грн
В кошику  од. на суму  грн.
FP15R12W1T7PBPSA1 FP15R12W1T7PBPSA1 Infineon Technologies Infineon-FP15R12W1T7P-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1881082731c Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+3212.45 грн
В кошику  од. на суму  грн.
FP15R12W1T7PB11BPSA1 FP15R12W1T7PB11BPSA1 Infineon Technologies Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2 Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
товару немає в наявності
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FF300R12ME7B11BPSA1 FF300R12ME7B11BPSA1 Infineon Technologies Infineon-FF300R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad70463236 Description: MEDIUM POWER ECONO, AG-ECONOD-74
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 46 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+12676.74 грн
В кошику  од. на суму  грн.
FF750R12ME7B11BPSA1 FF750R12ME7B11BPSA1 Infineon Technologies Infineon-FF750R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad908a3239 Description: ECONODUAL 3 WITH TRENCHSTOP IGBT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 115 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+12221.82 грн
10+10766.44 грн
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ISC012N04LM6ATMA1 ISC012N04LM6ATMA1 Infineon Technologies Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
товару немає в наявності
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ISC012N04LM6ATMA1 ISC012N04LM6ATMA1 Infineon Technologies Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
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REFICL8820LED43WJTTOBO1 REFICL8820LED43WJTTOBO1 Infineon Technologies New_Product_Information_Aug2021.pdf Description: EVAL BOARD FOR ICL8820
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Utilized IC / Part: ICL8820
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4783.24 грн
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CY90387PMT-GT-350E1 CY90387PMT-GT-350E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
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IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 Infineon Technologies Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 64µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V
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IPW60R070P6 Infineon Technologies Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e Description: 600V, 0.07OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
товару немає в наявності
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FS450R17OE4BOSA1 FS450R17OE4BOSA1 Infineon Technologies Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b Description: IGBT MOD 1700V 630A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+38565.89 грн
В кошику  од. на суму  грн.
DF900R12IP4DVBOSA1 DF900R12IP4DVBOSA1 Infineon Technologies Infineon-DF900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f4eadf0f0271 Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+32261.31 грн
В кошику  од. на суму  грн.
TLD2326ELXUMA1 TLD2326ELXUMA1 Infineon Technologies Infineon-TLD2326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53c6bc3ad2 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
333+71.00 грн
Мінімальне замовлення: 333
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DR11141890NDSA1 Infineon Technologies Description: A-PCB DR111 41890
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IPB65R115CFD7AATMA1 IPB65R115CFD7AATMA1 Infineon Technologies Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
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IPB65R115CFD7AATMA1 IPB65R115CFD7AATMA1 Infineon Technologies Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
2+168.12 грн
10+154.91 грн
Мінімальне замовлення: 2
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IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Infineon Technologies Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
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IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Infineon Technologies Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
1+337.89 грн
10+222.13 грн
100+158.13 грн
500+140.08 грн
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SLE66R01PNBX1SA1 Infineon Technologies SLE%2066R01P,PN.pdf Description: IC SECURITY CHIP CARD CTLR
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SLE66R35RCZZZA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR DIE
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SLE66R04PNBZZZA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR
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CHL8325A-16CRT Infineon Technologies IR3541_CHL8325A_B_v1.09_6-21-13.pdf Description: IC REG BUCK 40VQFN
товару немає в наявності
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FZ2400R33HE4BPSA1 FZ2400R33HE4BPSA1 Infineon Technologies Infineon-FZ2400R33HE4-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d58b60587 Description: IGBT MOD 3300V 2400A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 5400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
товару немає в наявності
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FZ1400R33HE4BPSA1 FZ1400R33HE4BPSA1 Infineon Technologies Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
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FF600R07ME4BPSA1 FF600R07ME4BPSA1 Infineon Technologies Infineon-FF600R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e34c4b11090 Description: GBT MODULE 650V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+13055.01 грн
В кошику  од. на суму  грн.
FF300R07ME4BOSA1 FF300R07ME4BOSA1 Infineon Technologies Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b Description: GBT MODULE 650V 300A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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S2GOSECURITYOPTIGAETOBO1 S2GOSECURITYOPTIGAETOBO1 Infineon Technologies Infineon-OPTIGA%20TM%20Trust%20E%20_Security%20Shield2Go-GS-v07_18-EN.pdf?fileId=5546d46264a8de7e0164ace776d5417c Description: EVAL TRUST X SECURITY CHIP
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
Platform: Shield2Go
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+763.14 грн
В кошику  од. на суму  грн.
S25FL256LAGBHI030 S25FL256LAGBHI030 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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CY8C20237-24LKXI CY8C20237-24LKXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
5+81.59 грн
Мінімальне замовлення: 5
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BAT 54W E6327 BAT 54W E6327 Infineon Technologies BAT54_Series.pdf Description: DIODE SCHOTTKY 30V 200MA SOT323
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DDB2U40N12W1RFB11BPSA1 DDB2U40N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+6369.68 грн
В кошику  од. на суму  грн.
OPTIGATRUSTMEVALKITTOBO1 OPTIGATRUSTMEVALKITTOBO1 Infineon Technologies Infineon-OPTIGA_Trust_M-GettingStarted-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c2ffd7e4d Description: OPTIGA TRUST M EVAL KIT
Packaging: Box
Function: Battery Authentication
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+9889.53 грн
В кошику  од. на суму  грн.
FF6MR12W2M1B70BPSA1 Infineon Technologies Infineon-FF6MR12W2M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017839e7ffac498c Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: AG-EASY2B
Part Status: Obsolete
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+27430.27 грн
15+25620.04 грн
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FF300R08W2P2B11ABOMA1 FF300R08W2P2B11ABOMA1 Infineon Technologies Infineon-FF300R08W2P2_B11A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b05f2df5f54a4 Description: EASY PACK AG-EASY2B-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 53 nF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+5952.68 грн
В кошику  од. на суму  грн.
IFX1117GSV IFX1117GSV Infineon Technologies IFX1117.pdf Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
770+30.77 грн
Мінімальне замовлення: 770
В кошику  од. на суму  грн.
TLE4274DV33ATMA1 TLE4274DV33ATMA1 Infineon Technologies TLE4274_rev2.3_2008-03-10.pdf Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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XMC7531SCQ040XAAXUMA1 XMC7531SCQ040XAAXUMA1 Infineon Technologies Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40
DigiKey Programmable: Not Verified
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TLS41255VBOARDTOBO1 TLS41255VBOARDTOBO1 Infineon Technologies Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd Description: TLS4125 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
товару немає в наявності
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TLS41205VBOARDTOBO1 TLS41205VBOARDTOBO1 Infineon Technologies Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd Description: EVAL BOARD FOR TLS4120D0EPV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
товару немає в наявності
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IPI45N06S4L08AKSA2 IPI45N06S4L08AKSA2 Infineon Technologies INFNS14118-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
742+30.33 грн
Мінімальне замовлення: 742
В кошику  од. на суму  грн.
IPD100N06S403ATMA2 INFNS14378-1.pdf?t.download=true&u=5oefqw
IPD100N06S403ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+67.04 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYW4329HKUBGT BCM4329_RevF_Sep19,2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4329FKUBGT BCM4329_RevF_Sep19,2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4325GKWBGT BCM4325_RevE_Sep19%2C2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4330FKUBGT CYW4330FKUBGT_Web.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW4330XKUBGT BCM4330_RevE_Sep19%2C2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20740A2KMLG
Виробник: Infineon Technologies
Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
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IPTG007N06NM5ATMA1 Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e
IPTG007N06NM5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+226.18 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTG007N06NM5ATMA1 Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e
IPTG007N06NM5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 2535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+506.84 грн
10+325.62 грн
100+266.60 грн
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ISZ080N10NM6ATMA1 Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5
ISZ080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
товару немає в наявності
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ISZ080N10NM6ATMA1 Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5
ISZ080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 4536 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+159.88 грн
10+100.07 грн
100+73.17 грн
500+52.90 грн
1000+47.23 грн
2000+45.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
ISC080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
товару немає в наявності
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ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
ISC080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 3378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+159.88 грн
10+102.30 грн
100+70.28 грн
500+52.68 грн
1000+47.20 грн
2000+44.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC060N10NM6ATMA1 Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3
ISC060N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+61.97 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC060N10NM6ATMA1 Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3
ISC060N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 15073 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.07 грн
10+118.96 грн
100+88.36 грн
500+68.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FZ3600R12HP4PHPSA1
FZ3600R12HP4PHPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 4930A AGIHMB190-2
товару немає в наявності
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DDB6U104N16RRB37BPSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf
DDB6U104N16RRB37BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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DDB6U104N16RRBPSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f
DDB6U104N16RRBPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5439.24 грн
В кошику  од. на суму  грн.
DDB6U84N16RRBPSA1 Infineon-DDB6U84N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f59252b3
DDB6U84N16RRBPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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F3L400R07W3S5B59BPSA1 Infineon-F3L400R07W3S5_B59-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef605751310
F3L400R07W3S5B59BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 255A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.13V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 255 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 19 µA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6933.39 грн
В кошику  од. на суму  грн.
FP15R12W1T7PBPSA1 Infineon-FP15R12W1T7P-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1881082731c
FP15R12W1T7PBPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3212.45 грн
В кошику  од. на суму  грн.
FP15R12W1T7PB11BPSA1 Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2
FP15R12W1T7PB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
товару немає в наявності
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FF300R12ME7B11BPSA1 Infineon-FF300R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad70463236
FF300R12ME7B11BPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO, AG-ECONOD-74
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 46 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12676.74 грн
В кошику  од. на суму  грн.
FF750R12ME7B11BPSA1 Infineon-FF750R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad908a3239
FF750R12ME7B11BPSA1
Виробник: Infineon Technologies
Description: ECONODUAL 3 WITH TRENCHSTOP IGBT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 115 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12221.82 грн
10+10766.44 грн
В кошику  од. на суму  грн.
ISC012N04LM6ATMA1 Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860
ISC012N04LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
товару немає в наявності
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ISC012N04LM6ATMA1 Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860
ISC012N04LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
товару немає в наявності
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REFICL8820LED43WJTTOBO1 New_Product_Information_Aug2021.pdf
REFICL8820LED43WJTTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICL8820
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Utilized IC / Part: ICL8820
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4783.24 грн
В кошику  од. на суму  грн.
CY90387PMT-GT-350E1 download
CY90387PMT-GT-350E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
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IAUC100N10S5L054ATMA1 Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211
IAUC100N10S5L054ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 64µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V
товару немає в наявності
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IPW60R070P6 Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e
Виробник: Infineon Technologies
Description: 600V, 0.07OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
товару немає в наявності
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FS450R17OE4BOSA1 Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b
FS450R17OE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 630A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+38565.89 грн
В кошику  од. на суму  грн.
DF900R12IP4DVBOSA1 Infineon-DF900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f4eadf0f0271
DF900R12IP4DVBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+32261.31 грн
В кошику  од. на суму  грн.
TLD2326ELXUMA1 Infineon-TLD2326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53c6bc3ad2
TLD2326ELXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
333+71.00 грн
Мінімальне замовлення: 333
В кошику  од. на суму  грн.
DR11141890NDSA1
Виробник: Infineon Technologies
Description: A-PCB DR111 41890
товару немає в наявності
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IPB65R115CFD7AATMA1 Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81
IPB65R115CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
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IPB65R115CFD7AATMA1 Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81
IPB65R115CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.12 грн
10+154.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL65R115CFD7AUMA1 Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7
IPL65R115CFD7AUMA1
Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
товару немає в наявності
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IPL65R115CFD7AUMA1 Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7
IPL65R115CFD7AUMA1
Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.89 грн
10+222.13 грн
100+158.13 грн
500+140.08 грн
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SLE66R01PNBX1SA1 SLE%2066R01P,PN.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
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SLE66R35RCZZZA1
Виробник: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR DIE
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SLE66R04PNBZZZA1
Виробник: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
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CHL8325A-16CRT IR3541_CHL8325A_B_v1.09_6-21-13.pdf
Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
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FZ2400R33HE4BPSA1 Infineon-FZ2400R33HE4-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d58b60587
FZ2400R33HE4BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 2400A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 5400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
FZ1400R33HE4BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
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FF600R07ME4BPSA1 Infineon-FF600R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e34c4b11090
FF600R07ME4BPSA1
Виробник: Infineon Technologies
Description: GBT MODULE 650V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13055.01 грн
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FF300R07ME4BOSA1 Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b
FF300R07ME4BOSA1
Виробник: Infineon Technologies
Description: GBT MODULE 650V 300A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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S2GOSECURITYOPTIGAETOBO1 Infineon-OPTIGA%20TM%20Trust%20E%20_Security%20Shield2Go-GS-v07_18-EN.pdf?fileId=5546d46264a8de7e0164ace776d5417c
S2GOSECURITYOPTIGAETOBO1
Виробник: Infineon Technologies
Description: EVAL TRUST X SECURITY CHIP
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
Platform: Shield2Go
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+763.14 грн
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S25FL256LAGBHI030 INFN-S-A0017271261-1.pdf
S25FL256LAGBHI030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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CY8C20237-24LKXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20237-24LKXI
Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+81.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BAT 54W E6327 BAT54_Series.pdf
BAT 54W E6327
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA SOT323
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DDB2U40N12W1RFB11BPSA1 Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c
DDB2U40N12W1RFB11BPSA1
Виробник: Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6369.68 грн
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OPTIGATRUSTMEVALKITTOBO1 Infineon-OPTIGA_Trust_M-GettingStarted-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c2ffd7e4d
OPTIGATRUSTMEVALKITTOBO1
Виробник: Infineon Technologies
Description: OPTIGA TRUST M EVAL KIT
Packaging: Box
Function: Battery Authentication
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9889.53 грн
В кошику  од. на суму  грн.
FF6MR12W2M1B70BPSA1 Infineon-FF6MR12W2M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017839e7ffac498c
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: AG-EASY2B
Part Status: Obsolete
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27430.27 грн
15+25620.04 грн
В кошику  од. на суму  грн.
FF300R08W2P2B11ABOMA1 Infineon-FF300R08W2P2_B11A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b05f2df5f54a4
FF300R08W2P2B11ABOMA1
Виробник: Infineon Technologies
Description: EASY PACK AG-EASY2B-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 53 nF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5952.68 грн
В кошику  од. на суму  грн.
IFX1117GSV IFX1117.pdf
IFX1117GSV
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
770+30.77 грн
Мінімальне замовлення: 770
В кошику  од. на суму  грн.
TLE4274DV33ATMA1 TLE4274_rev2.3_2008-03-10.pdf
TLE4274DV33ATMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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XMC7531SCQ040XAAXUMA1 Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a
XMC7531SCQ040XAAXUMA1
Виробник: Infineon Technologies
Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40
DigiKey Programmable: Not Verified
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TLS41255VBOARDTOBO1 Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd
TLS41255VBOARDTOBO1
Виробник: Infineon Technologies
Description: TLS4125 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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TLS41205VBOARDTOBO1 Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd
TLS41205VBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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IPI45N06S4L08AKSA2 INFNS14118-1.pdf?t.download=true&u=5oefqw
IPI45N06S4L08AKSA2
Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
742+30.33 грн
Мінімальне замовлення: 742
В кошику  од. на суму  грн.
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