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CY95F636HNPMC-G-UNERE2 CY95F636HNPMC-G-UNERE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+223.87 грн
10+155.04 грн
25+140.01 грн
100+115.89 грн
250+108.49 грн
500+104.03 грн
Мінімальне замовлення: 2
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S25FL512SAGBAEA10 S25FL512SAGBAEA10 Infineon Technologies Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 399 шт:
термін постачання 21-31 дні (днів)
1+5851.20 грн
10+5198.47 грн
25+5028.13 грн
40+4637.87 грн
80+4520.31 грн
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S25FL512SAGBHBA13 S25FL512SAGBHBA13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL512SAGBHBA13 S25FL512SAGBHBA13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2152 шт:
термін постачання 21-31 дні (днів)
1+540.26 грн
10+483.10 грн
25+468.39 грн
50+429.11 грн
100+418.70 грн
250+405.09 грн
500+395.13 грн
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CY9AF112KPMC-G-101-JNE1 CY9AF112KPMC-G-101-JNE1 Infineon Technologies Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
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CY9AF112KPMC-G-105-JNE2 CY9AF112KPMC-G-105-JNE2 Infineon Technologies Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
товару немає в наявності
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CY23S05SXC-1 CY23S05SXC-1 Infineon Technologies Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23S09SXC-1HT CY23S09SXC-1HT Infineon Technologies Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
46+518.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
CY23S05SXC-1H CY23S05SXC-1H Infineon Technologies Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY23S05SXC-1HT CY23S05SXC-1HT Infineon Technologies Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23S05SXI-1T CY23S05SXI-1T Infineon Technologies Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY23S09ZXC-1HT CY23S09ZXC-1HT Infineon Technologies Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
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TT570N16KOFHPSA2 TT570N16KOFHPSA2 Infineon Technologies Infineon-TT570N-DS-v3_1-en_de.pdf?fileId=db3a304412b407950112b42f96354c4e Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+19718.77 грн
В кошику  од. на суму  грн.
S29GL256S90DHSS30 S29GL256S90DHSS30 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY8C4127AXI-S445 CY8C4127AXI-S445 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
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FS200R07N3E4RBOSA1 FS200R07N3E4RBOSA1 Infineon Technologies Infineon-FS200R07N3E4R-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f44e7fb1f1f5b Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
1+7894.12 грн
10+6433.48 грн
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CG7470AM Infineon Technologies Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
на замовлення 1053 шт:
термін постачання 21-31 дні (днів)
55+456.00 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
CG7476AF Infineon Technologies Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
44+570.00 грн
Мінімальне замовлення: 44
В кошику  од. на суму  грн.
TLE72702DATMA1 TLE72702DATMA1 Infineon Technologies Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91 Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+95.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE72702DATMA1 TLE72702DATMA1 Infineon Technologies Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91 Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
2+183.39 грн
10+131.34 грн
25+120.12 грн
100+101.07 грн
250+95.52 грн
500+92.17 грн
1000+87.95 грн
Мінімальне замовлення: 2
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CY7C1545KV18-400BZXI CY7C1545KV18-400BZXI Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
2+15436.32 грн
Мінімальне замовлення: 2
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IRFR1018EPBF IRFR1018EPBF Infineon Technologies irfr1018epbf.pdf?fileId=5546d462533600a40153562d092f2042 description Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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BF888H6327XTSA1 Infineon Technologies BF888.pdf Description: RF TRANS NPN 4V 47GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
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BF888H6327XTSA1 Infineon Technologies BF888.pdf Description: RF TRANS NPN 4V 47GHZ SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 375000 шт:
термін постачання 21-31 дні (днів)
1553+14.49 грн
Мінімальне замовлення: 1553
В кошику  од. на суму  грн.
AUIRFSL8407 AUIRFSL8407 Infineon Technologies auirfs8407.pdf?fileId=5546d462533600a4015355b711f614e1 Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+612.13 грн
10+404.75 грн
100+335.81 грн
В кошику  од. на суму  грн.
CY62147GE30-45ZSXI CY62147GE30-45ZSXI Infineon Technologies Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
3+162.74 грн
10+133.72 грн
25+125.53 грн
40+114.05 грн
135+105.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY62147GE30-45ZSXI CY62147GE30-45ZSXI Infineon Technologies Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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TLE9854QXXUMA1 Infineon Technologies Infineon-TLE9854QX-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016a12195200459f Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+244.16 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9854QXXUMA1 Infineon Technologies Infineon-TLE9854QX-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016a12195200459f Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4570 шт:
термін постачання 21-31 дні (днів)
1+435.35 грн
10+320.98 грн
25+296.24 грн
100+252.52 грн
250+240.37 грн
500+233.04 грн
1000+223.29 грн
В кошику  од. на суму  грн.
IDH05SG60CXKSA2 IDH05SG60CXKSA2 Infineon Technologies Infineon-IDH05SG60C-DS-v02_04-en.pdf?fileId=db3a30431f848401011ff4cebd9a531b Description: DIODE SIL CARB 600V 5A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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BSM150GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 300A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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BSM150GB120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 210A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 2.8 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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BSM150GB120DN2FE325HOSA1 Infineon Technologies Description: IGBT MOD
Packaging: Bulk
Part Status: Obsolete
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CY9BF516RPMC-GE1 CY9BF516RPMC-GE1 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
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IRFZ34NSTRRPBF IRFZ34NSTRRPBF Infineon Technologies irfz34nspbf.pdf?fileId=5546d462533600a40153563b1a522202 Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
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KIT6W12VP7950VTOBO1 KIT6W12VP7950VTOBO1 Infineon Technologies Infineon-General_description_KIT_6W_12V_P7_950V-ATI-v01_00-EN.pdf?fileId=5546d462647e95a60164897fd658509a Description: EVAL BOARD FOR ICE5QSAG
Packaging: Bulk
Accessory Type: Interface Board
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+2962.36 грн
В кошику  од. на суму  грн.
TZ425N16KOFHPSA1 TZ425N16KOFHPSA1 Infineon Technologies Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+13669.31 грн
В кошику  од. на суму  грн.
IPD60R2K0C6ATMA1 IPD60R2K0C6ATMA1 Infineon Technologies Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+19.00 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R2K0C6ATMA1 IPD60R2K0C6ATMA1 Infineon Technologies Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+66.91 грн
10+41.84 грн
100+30.75 грн
500+23.09 грн
1000+20.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MB90561APF-G-434E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MICROCONTROLLER 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
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MB89191APF-G-347-ER-RE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 4KB MROM 28SOP
Packaging: Tray
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
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MB90467PFM-G-347-JNE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
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MB90673PF-G-347-BND-B MB90673PF-G-347-BND-B Infineon Technologies Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
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MB90673PF-G-347-BND-BE1 Infineon Technologies Description: IC MICROCONTROLLER 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
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MB89657ARPF-G-347-BNDE1 MB89657ARPF-G-347-BNDE1 Infineon Technologies Description: IC MCU 8BIT 32KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 48
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SP36203431DQAC Infineon Technologies Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
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SP36203431DQBC Infineon Technologies Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
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SP36203431DQCC Infineon Technologies Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
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FF650R17IE4DPB2BOSA1 FF650R17IE4DPB2BOSA1 Infineon Technologies Infineon-FF650R17IE4DP_B2-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153f006102d3cca Description: IGBT MODULE 1700V 650A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+37168.27 грн
В кошику  од. на суму  грн.
S26HS01GTGABHB030 S26HS01GTGABHB030 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
1+1489.44 грн
10+1328.95 грн
25+1287.01 грн
50+1178.25 грн
100+1148.99 грн
260+1109.29 грн
В кошику  од. на суму  грн.
IPD90N06S4L05ATMA2 IPD90N06S4L05ATMA2 Infineon Technologies Infineon-IPD90N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038729a180c91 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPD90N06S4L05ATMA2 IPD90N06S4L05ATMA2 Infineon Technologies Infineon-IPD90N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038729a180c91 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2241 шт:
термін постачання 21-31 дні (днів)
3+117.30 грн
10+84.88 грн
100+58.40 грн
500+48.50 грн
1000+46.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N06S4L06ATMA2 IPD90N06S4L06ATMA2 Infineon Technologies Infineon-IPD90N06S4L_06-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038818b620c96 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+35.86 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90N06S4L06ATMA2 IPD90N06S4L06ATMA2 Infineon Technologies Infineon-IPD90N06S4L_06-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038818b620c96 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3331 шт:
термін постачання 21-31 дні (днів)
3+112.35 грн
10+68.97 грн
100+52.48 грн
500+40.56 грн
1000+37.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB90N06S404ATMA2 IPB90N06S404ATMA2 Infineon Technologies Infineon-I90N06S4_04-DS-v01_02-en.pdf?fileId=db3a30431ff98815012038cce6020cda Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
228+95.87 грн
Мінімальне замовлення: 228
В кошику  од. на суму  грн.
AUIRLS3036TRL AUIRLS3036TRL Infineon Technologies irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Qualification: AEC-Q101
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AUIRLS3036-7P AUIRLS3036-7P Infineon Technologies auirls3036-7p.pdf?fileId=5546d462533600a4015355bed38b158a Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
Qualification: AEC-Q101
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AUIRLS4030TRL AUIRLS4030TRL Infineon Technologies IRSDS19253-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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AUIRLS4030-7P Infineon Technologies auirls4030-7p.pdf?fileId=5546d462533600a4015355beeae91591 Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
Qualification: AEC-Q101
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IRLS4030PBF IRLS4030PBF Infineon Technologies irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715 Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
товару немає в наявності
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CY95F636HNPMC-G-UNERE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F636HNPMC-G-UNERE2
Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.87 грн
10+155.04 грн
25+140.01 грн
100+115.89 грн
250+108.49 грн
500+104.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL512SAGBAEA10 Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f
S25FL512SAGBAEA10
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 399 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5851.20 грн
10+5198.47 грн
25+5028.13 грн
40+4637.87 грн
80+4520.31 грн
В кошику  од. на суму  грн.
S25FL512SAGBHBA13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SAGBHBA13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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S25FL512SAGBHBA13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SAGBHBA13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2152 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+540.26 грн
10+483.10 грн
25+468.39 грн
50+429.11 грн
100+418.70 грн
250+405.09 грн
500+395.13 грн
В кошику  од. на суму  грн.
CY9AF112KPMC-G-101-JNE1
CY9AF112KPMC-G-101-JNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
товару немає в наявності
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CY9AF112KPMC-G-105-JNE2
CY9AF112KPMC-G-105-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
товару немає в наявності
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CY23S05SXC-1 Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY23S05SXC-1
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
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CY23S09SXC-1HT Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY23S09SXC-1HT
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
46+518.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
CY23S05SXC-1H Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY23S05SXC-1H
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
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CY23S05SXC-1HT Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY23S05SXC-1HT
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23S05SXI-1T Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY23S05SXI-1T
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23S09ZXC-1HT Infineon-CY23S09_CY23S05_Low_Cost_3.3_V_Spread_Aware_Zero_Delay_Buffer-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5dfdc3bff&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY23S09ZXC-1HT
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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TT570N16KOFHPSA2 Infineon-TT570N-DS-v3_1-en_de.pdf?fileId=db3a304412b407950112b42f96354c4e
TT570N16KOFHPSA2
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+19718.77 грн
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S29GL256S90DHSS30
S29GL256S90DHSS30
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY8C4127AXI-S445 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4127AXI-S445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
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FS200R07N3E4RBOSA1 Infineon-FS200R07N3E4R-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f44e7fb1f1f5b
FS200R07N3E4RBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7894.12 грн
10+6433.48 грн
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CG7470AM
Виробник: Infineon Technologies
Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
на замовлення 1053 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
55+456.00 грн
Мінімальне замовлення: 55
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CG7476AF
Виробник: Infineon Technologies
Description: IC CLOCK DISTRIBUTION QFN
Packaging: Bulk
Part Status: Obsolete
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
44+570.00 грн
Мінімальне замовлення: 44
В кошику  од. на суму  грн.
TLE72702DATMA1 Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91
TLE72702DATMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+95.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE72702DATMA1 Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91
TLE72702DATMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.39 грн
10+131.34 грн
25+120.12 грн
100+101.07 грн
250+95.52 грн
500+92.17 грн
1000+87.95 грн
Мінімальне замовлення: 2
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CY7C1545KV18-400BZXI download
CY7C1545KV18-400BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+15436.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR1018EPBF description irfr1018epbf.pdf?fileId=5546d462533600a40153562d092f2042
IRFR1018EPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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BF888H6327XTSA1 BF888.pdf
Виробник: Infineon Technologies
Description: RF TRANS NPN 4V 47GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
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BF888H6327XTSA1 BF888.pdf
Виробник: Infineon Technologies
Description: RF TRANS NPN 4V 47GHZ SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 375000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1553+14.49 грн
Мінімальне замовлення: 1553
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AUIRFSL8407 auirfs8407.pdf?fileId=5546d462533600a4015355b711f614e1
AUIRFSL8407
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+612.13 грн
10+404.75 грн
100+335.81 грн
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CY62147GE30-45ZSXI Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp
CY62147GE30-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+162.74 грн
10+133.72 грн
25+125.53 грн
40+114.05 грн
135+105.09 грн
Мінімальне замовлення: 3
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CY62147GE30-45ZSXI Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp
CY62147GE30-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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TLE9854QXXUMA1 Infineon-TLE9854QX-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016a12195200459f
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+244.16 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9854QXXUMA1 Infineon-TLE9854QX-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016a12195200459f
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+435.35 грн
10+320.98 грн
25+296.24 грн
100+252.52 грн
250+240.37 грн
500+233.04 грн
1000+223.29 грн
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IDH05SG60CXKSA2 Infineon-IDH05SG60C-DS-v02_04-en.pdf?fileId=db3a30431f848401011ff4cebd9a531b
IDH05SG60CXKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
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BSM150GB120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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BSM150GB120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 210A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 2.8 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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BSM150GB120DN2FE325HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD
Packaging: Bulk
Part Status: Obsolete
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CY9BF516RPMC-GE1 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c
CY9BF516RPMC-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
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IRFZ34NSTRRPBF irfz34nspbf.pdf?fileId=5546d462533600a40153563b1a522202
IRFZ34NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
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KIT6W12VP7950VTOBO1 Infineon-General_description_KIT_6W_12V_P7_950V-ATI-v01_00-EN.pdf?fileId=5546d462647e95a60164897fd658509a
KIT6W12VP7950VTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5QSAG
Packaging: Bulk
Accessory Type: Interface Board
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2962.36 грн
В кошику  од. на суму  грн.
TZ425N16KOFHPSA1 Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d
TZ425N16KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13669.31 грн
В кошику  од. на суму  грн.
IPD60R2K0C6ATMA1 Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f
IPD60R2K0C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+19.00 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R2K0C6ATMA1 Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f
IPD60R2K0C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.91 грн
10+41.84 грн
100+30.75 грн
500+23.09 грн
1000+20.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MB90561APF-G-434E1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
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MB89191APF-G-347-ER-RE1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB MROM 28SOP
Packaging: Tray
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
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MB90467PFM-G-347-JNE1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 51
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MB90673PF-G-347-BND-B
MB90673PF-G-347-BND-B
Виробник: Infineon Technologies
Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
товару немає в наявності
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MB90673PF-G-347-BND-BE1
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
товару немає в наявності
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MB89657ARPF-G-347-BNDE1
MB89657ARPF-G-347-BNDE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 48
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SP36203431DQAC
Виробник: Infineon Technologies
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
товару немає в наявності
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SP36203431DQBC
Виробник: Infineon Technologies
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
товару немає в наявності
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SP36203431DQCC
Виробник: Infineon Technologies
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
товару немає в наявності
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FF650R17IE4DPB2BOSA1 Infineon-FF650R17IE4DP_B2-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153f006102d3cca
FF650R17IE4DPB2BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+37168.27 грн
В кошику  од. на суму  грн.
S26HS01GTGABHB030 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS01GTGABHB030
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1489.44 грн
10+1328.95 грн
25+1287.01 грн
50+1178.25 грн
100+1148.99 грн
260+1109.29 грн
В кошику  од. на суму  грн.
IPD90N06S4L05ATMA2 Infineon-IPD90N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038729a180c91
IPD90N06S4L05ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IPD90N06S4L05ATMA2 Infineon-IPD90N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038729a180c91
IPD90N06S4L05ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.30 грн
10+84.88 грн
100+58.40 грн
500+48.50 грн
1000+46.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N06S4L06ATMA2 Infineon-IPD90N06S4L_06-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038818b620c96
IPD90N06S4L06ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+35.86 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90N06S4L06ATMA2 Infineon-IPD90N06S4L_06-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038818b620c96
IPD90N06S4L06ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.35 грн
10+68.97 грн
100+52.48 грн
500+40.56 грн
1000+37.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB90N06S404ATMA2 Infineon-I90N06S4_04-DS-v01_02-en.pdf?fileId=db3a30431ff98815012038cce6020cda
IPB90N06S404ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
228+95.87 грн
Мінімальне замовлення: 228
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AUIRLS3036TRL irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d
AUIRLS3036TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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AUIRLS3036-7P auirls3036-7p.pdf?fileId=5546d462533600a4015355bed38b158a
AUIRLS3036-7P
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
Qualification: AEC-Q101
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AUIRLS4030TRL IRSDS19253-1.pdf?t.download=true&u=5oefqw
AUIRLS4030TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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AUIRLS4030-7P auirls4030-7p.pdf?fileId=5546d462533600a4015355beeae91591
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
Qualification: AEC-Q101
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IRLS4030PBF irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715
IRLS4030PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
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