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BCR108E6433HTMA1 BCR108E6433HTMA1 Infineon Technologies bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 108 B6327 BCR 108 B6327 Infineon Technologies bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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CY15V104QI-20LPXIT CY15V104QI-20LPXIT Infineon Technologies Infineon-CY15B104QI_CY15V104QI_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6e6c56fcd Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY15V104QI-20LPXCT CY15V104QI-20LPXCT Infineon Technologies Infineon-CY15B104QI_CY15V104QI_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6e6c56fcd Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY15V104QI-20LPXI CY15V104QI-20LPXI Infineon Technologies Infineon-CY15B104QI_CY15V104QI_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee6e6c56fcd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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S29GL01GS10FAI010 S29GL01GS10FAI010 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
1+1100.27 грн
10+983.09 грн
25+952.51 грн
50+872.27 грн
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CY9AFB44LBQN-G-AVE2 CY9AFB44LBQN-G-AVE2 Infineon Technologies Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
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CY9AFB44LPMC-G-JNE2 Infineon Technologies infineon-cy9afb41l-m-n-cy9afb42l-m-n-cy9afb44l-m-n-32-bit-arm-cortex--m3-fm3-microcontroller-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608&utm_source=cypress&utm_medium=referr Description: IC MCU 32BIT 288KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Active
Number of I/O: 51
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S29GL01GS10DHSS43 S29GL01GS10DHSS43 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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PXE1610BDNG002XTMA1 Infineon Technologies Description: IC CONTROLLER
Packaging: Bulk
Part Status: Obsolete
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BCR402UE6433HTMA1 BCR402UE6433HTMA1 Infineon Technologies Infineon-BCR402-DataSheet-v02_02-EN.pdf?fileId=5546d4626102d35a01617524e8f40619 Description: LED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Topology: Constant Current
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+13.50 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BCR402UE6433HTMA1 BCR402UE6433HTMA1 Infineon Technologies Infineon-BCR402-DataSheet-v02_02-EN.pdf?fileId=5546d4626102d35a01617524e8f40619 Description: LED DRIVER
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Topology: Constant Current
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
8+45.13 грн
10+35.34 грн
25+32.34 грн
100+22.59 грн
250+20.47 грн
500+16.94 грн
1000+12.50 грн
2500+11.46 грн
5000+10.76 грн
Мінімальне замовлення: 8
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CY14V101LA-BA25XI CY14V101LA-BA25XI Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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2DIB0400FXUMA1 2DIB0400FXUMA1 Infineon Technologies Infineon-2DIBx40xF-DS-v_1_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187374172573005 Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Part Status: Active
Number of Channels: 2
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2DIB0400FXUMA1 2DIB0400FXUMA1 Infineon Technologies Infineon-2DIBx40xF-DS-v_1_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187374172573005 Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Part Status: Active
Number of Channels: 2
на замовлення 3929 шт:
термін постачання 21-31 дні (днів)
4+95.38 грн
10+64.95 грн
100+48.53 грн
500+38.72 грн
1000+36.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC019N04LSTATMA1 BSC019N04LSTATMA1 Infineon Technologies Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c Description: MOSFET N-CH 40V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
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BSC019N04LSTATMA1 BSC019N04LSTATMA1 Infineon Technologies Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c Description: MOSFET N-CH 40V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
на замовлення 4989 шт:
термін постачання 21-31 дні (днів)
3+114.11 грн
10+80.20 грн
25+72.85 грн
100+60.77 грн
250+57.13 грн
500+54.94 грн
1000+52.27 грн
2500+50.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S29AS016J70BFI040 S29AS016J70BFI040 Infineon Technologies Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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S29GL128S90DHSS10 S29GL128S90DHSS10 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CYW89570CFFBGT Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
Part Status: Active
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FP75R07N2E4B16BPSA1 Infineon Technologies infineon-fp75r07n2e4-ds-ja.pdf?fileId=db3a30433dcf2fc4013dcf563c3f005a Description: IGBT MODULE 650V 95A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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XMC4402F100K256BAXUMA1 XMC4402F100K256BAXUMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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D126B45CXPSA1 D126B45CXPSA1 Infineon Technologies Description: DIODE GEN PURP 4.5KV 200A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
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BSC034N03LSGATMA1 BSC034N03LSGATMA1 Infineon Technologies BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+29.03 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CY7C63101A-QXC CY7C63101A-QXC Infineon Technologies CY7C63001A_63101A.pdf Description: IC MCU 4K USB MCU LS 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 128 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C631xx
Program Memory Type: OTP (4kB)
Applications: USB Microcontroller
Core Processor: M8A
Supplier Device Package: 24-QSOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63101C-QXC CY7C63101C-QXC Infineon Technologies CY7C63001C%2C63101C.pdf Description: IC MCU 4K USB MCU LS 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 128 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C631xx
Program Memory Type: OTP (4kB)
Applications: USB Microcontroller
Core Processor: M8A
Supplier Device Package: 24-QSOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY91F523DSEPMC-GSE2 CY91F523DSEPMC-GSE2 Infineon Technologies Description: IC MCU 32BIT 448KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Last Time Buy
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F522DSEPMC-GS-ERE2 CY91F522DSEPMC-GS-ERE2 Infineon Technologies Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F525DSEPMC-GTE1 CY91F525DSEPMC-GTE1 Infineon Technologies Description: IC MCU 32BIT 832KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY91F522DSEPMC-GSE2 CY91F522DSEPMC-GSE2 Infineon Technologies Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F525DSEPMC-GS-ERE2 CY91F525DSEPMC-GS-ERE2 Infineon Technologies Description: IC MCU 32BIT 832KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F526DSEPMC-GTE1 CY91F526DSEPMC-GTE1 Infineon Technologies Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F526DSEPMC-GSE1 CY91F526DSEPMC-GSE1 Infineon Technologies Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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IMW120R045M1XKSA1 IMW120R045M1XKSA1 Infineon Technologies Infineon-IMW120R045M1-DataSheet-v02_03-EN.pdf?fileId=5546d46269bda8df0169de34fd2f3a3b Description: SICFET N-CH 1.2KV 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
1+855.86 грн
30+617.18 грн
В кошику  од. на суму  грн.
IRFP4410ZPBF IRFP4410ZPBF Infineon Technologies IRFP4410ZPBF.pdf Description: MOSFET N-CH 100V 97A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
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IRFB4020PBF IRFB4020PBF Infineon Technologies irfb4020pbf.pdf?fileId=5546d462533600a4015356158ffd1e05 Description: MOSFET N-CH 200V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
на замовлення 6325 шт:
термін постачання 21-31 дні (днів)
3+137.11 грн
50+63.13 грн
100+56.45 грн
500+41.99 грн
1000+38.45 грн
2000+35.48 грн
5000+32.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 Infineon Technologies Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+434.32 грн
10+320.31 грн
30+291.69 грн
120+249.80 грн
В кошику  од. на суму  грн.
TLE4966H TLE4966H Infineon Technologies TLE4966x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd85b86f7ad7 Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Part Status: Obsolete
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IRFB4019PBF IRFB4019PBF Infineon Technologies irfb4019pbf.pdf?fileId=5546d462533600a40153561587651e03 description Description: MOSFET N-CH 150V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
на замовлення 879 шт:
термін постачання 21-31 дні (днів)
3+127.74 грн
50+48.73 грн
100+42.85 грн
500+39.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS5482SFXUMA1 Infineon Technologies Description: IC PWR SWITCH
Packaging: Bulk
Part Status: Obsolete
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В кошику  од. на суму  грн.
IM523L6AXKMA1 IM523L6AXKMA1 Infineon Technologies Infineon-IM523-L6A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181e6167e065baf Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13V ~ 17.5V
Applications: Appliance
Technology: IGBT
Voltage - Load: 0V ~ 450V
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
1+742.59 грн
14+542.00 грн
28+514.09 грн
112+443.18 грн
252+426.37 грн
В кошику  од. на суму  грн.
IM523S6AXKMA1 IM523S6AXKMA1 Infineon Technologies Infineon-IM523-S6A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181e616732b5bac Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13V ~ 17.5V
Applications: Appliance
Technology: IGBT
Voltage - Load: 0V ~ 450V
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
1+698.31 грн
14+507.15 грн
28+480.41 грн
112+413.24 грн
В кошику  од. на суму  грн.
IM523M6AXKMA1 IM523M6AXKMA1 Infineon Technologies Infineon-IM523-M6A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181e61697295bb5 Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13V ~ 17.5V
Applications: Appliance
Technology: IGBT
Voltage - Load: 0V ~ 450V
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
1+659.99 грн
14+479.38 грн
28+454.22 грн
112+390.87 грн
252+375.72 грн
В кошику  од. на суму  грн.
IDW16G65C5XKSA1 IDW16G65C5XKSA1 Infineon Technologies IDW16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30433899edae0138a478b3db208c Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
1+537.36 грн
30+413.47 грн
120+369.95 грн
В кошику  од. на суму  грн.
IDH06G65C5XKSA2 IDH06G65C5XKSA2 Infineon Technologies IDH06G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a0353dadb5970 Description: DIODE SIL CARB 650V 6A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 110 µA @ 650 V
на замовлення 1291 шт:
термін постачання 21-31 дні (днів)
3+151.58 грн
50+116.89 грн
100+96.18 грн
500+81.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDW30G65C5XKSA1 IDW30G65C5XKSA1 Infineon Technologies IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca Description: DIODE SIL CARB 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 220 µA @ 650 V
на замовлення 1201 шт:
термін постачання 21-31 дні (днів)
1+915.47 грн
10+777.01 грн
100+672.02 грн
500+571.54 грн
1000+524.24 грн
В кошику  од. на суму  грн.
IDH16G65C5XKSA2 IDH16G65C5XKSA2 Infineon Technologies IDH16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06c7efb201a1 Description: DIODE SIL CARB 650V 16A TO220-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)
1+552.69 грн
50+284.51 грн
100+260.62 грн
500+205.32 грн
1000+203.09 грн
В кошику  од. на суму  грн.
IDW20G65C5XKSA1 IDW20G65C5XKSA1 Infineon Technologies IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Description: DIODE SIC 650V 20A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+650.62 грн
30+360.33 грн
120+306.09 грн
В кошику  од. на суму  грн.
IDL10G65C5XUMA2 IDL10G65C5XUMA2 Infineon Technologies Infineon-IDL10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143050c02185c06 Description: DIODE SIL CARB 650V 10A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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IDL10G65C5XUMA2 IDL10G65C5XUMA2 Infineon Technologies Infineon-IDL10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143050c02185c06 Description: DIODE SIL CARB 650V 10A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
на замовлення 751 шт:
термін постачання 21-31 дні (днів)
2+313.39 грн
10+209.03 грн
100+153.74 грн
500+121.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MB91F467CBPMCR-GSK5E2 Infineon Technologies Description: IC AUTO MCU 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 30x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 104
DigiKey Programmable: Not Verified
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CG7498AAT Infineon Technologies Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CG7499AA Infineon Technologies Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CG7499AAT Infineon Technologies Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CG7498AA Infineon Technologies Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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ICE5GR2280AGXUMA1 ICE5GR2280AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 23 W
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ICE5GR2280AGXUMA1 ICE5GR2280AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 23 W
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TLE4929CXVAM38AAHAMA1 TLE4929CXVAM38AAHAMA1 Infineon Technologies Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53 Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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CYW20819A1KFBG CYW20819A1KFBG Infineon Technologies Infineon-AIROC_CYW20819_Bluetooth_Bluetooth_LE_5_2_SoC-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7dba070bf Description: IC RF TXRX+MCU BLE 62FBGA
Packaging: Tray
Package / Case: 62-WFBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.045V ~ 1.26V
Power - Output: 4.5dBm
Protocol: Bluetooth v5.2
Current - Receiving: 6.1mA ~ 6.69mA
Data Rate (Max): 3Mbps
Current - Transmitting: 6.16mA ~ 11.28mA
Supplier Device Package: 62-FBGA (4.5x4.5)
GPIO: 22
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, JTAG, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
1+493.93 грн
10+366.89 грн
25+333.70 грн
80+280.20 грн
230+255.77 грн
490+241.04 грн
980+225.54 грн
В кошику  од. на суму  грн.
IRS24531DSTRPBF IRS24531DSTRPBF Infineon Technologies irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814 Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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BCR108E6433HTMA1 bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce
BCR108E6433HTMA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 108 B6327 bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce
BCR 108 B6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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CY15V104QI-20LPXIT Infineon-CY15B104QI_CY15V104QI_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6e6c56fcd
CY15V104QI-20LPXIT
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY15V104QI-20LPXCT Infineon-CY15B104QI_CY15V104QI_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6e6c56fcd
CY15V104QI-20LPXCT
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY15V104QI-20LPXI Infineon-CY15B104QI_CY15V104QI_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee6e6c56fcd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY15V104QI-20LPXI
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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S29GL01GS10FAI010 S29GL-S_PbPkg.pdf
S29GL01GS10FAI010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1100.27 грн
10+983.09 грн
25+952.51 грн
50+872.27 грн
В кошику  од. на суму  грн.
CY9AFB44LBQN-G-AVE2 Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AFB44LBQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
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CY9AFB44LPMC-G-JNE2 infineon-cy9afb41l-m-n-cy9afb42l-m-n-cy9afb44l-m-n-32-bit-arm-cortex--m3-fm3-microcontroller-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608&utm_source=cypress&utm_medium=referr
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Active
Number of I/O: 51
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S29GL01GS10DHSS43 PdfFile_133368.pdf
S29GL01GS10DHSS43
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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PXE1610BDNG002XTMA1
Виробник: Infineon Technologies
Description: IC CONTROLLER
Packaging: Bulk
Part Status: Obsolete
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BCR402UE6433HTMA1 Infineon-BCR402-DataSheet-v02_02-EN.pdf?fileId=5546d4626102d35a01617524e8f40619
BCR402UE6433HTMA1
Виробник: Infineon Technologies
Description: LED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Topology: Constant Current
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+13.50 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BCR402UE6433HTMA1 Infineon-BCR402-DataSheet-v02_02-EN.pdf?fileId=5546d4626102d35a01617524e8f40619
BCR402UE6433HTMA1
Виробник: Infineon Technologies
Description: LED DRIVER
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Topology: Constant Current
Supplier Device Package: PG-SC74-6
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.13 грн
10+35.34 грн
25+32.34 грн
100+22.59 грн
250+20.47 грн
500+16.94 грн
1000+12.50 грн
2500+11.46 грн
5000+10.76 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
CY14V101LA-BA25XI download
CY14V101LA-BA25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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2DIB0400FXUMA1 Infineon-2DIBx40xF-DS-v_1_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187374172573005
2DIB0400FXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Part Status: Active
Number of Channels: 2
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2DIB0400FXUMA1 Infineon-2DIBx40xF-DS-v_1_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187374172573005
2DIB0400FXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Part Status: Active
Number of Channels: 2
на замовлення 3929 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.38 грн
10+64.95 грн
100+48.53 грн
500+38.72 грн
1000+36.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC019N04LSTATMA1 Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c
BSC019N04LSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
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BSC019N04LSTATMA1 Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c
BSC019N04LSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
на замовлення 4989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.11 грн
10+80.20 грн
25+72.85 грн
100+60.77 грн
250+57.13 грн
500+54.94 грн
1000+52.27 грн
2500+50.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S29AS016J70BFI040 Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
S29AS016J70BFI040
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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S29GL128S90DHSS10 PdfFile_133368.pdf
S29GL128S90DHSS10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CYW89570CFFBGT
Виробник: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
Part Status: Active
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FP75R07N2E4B16BPSA1 infineon-fp75r07n2e4-ds-ja.pdf?fileId=db3a30433dcf2fc4013dcf563c3f005a
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 95A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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XMC4402F100K256BAXUMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4402F100K256BAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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D126B45CXPSA1
D126B45CXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 200A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
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BSC034N03LSGATMA1 BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef
BSC034N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+29.03 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CY7C63101A-QXC CY7C63001A_63101A.pdf
CY7C63101A-QXC
Виробник: Infineon Technologies
Description: IC MCU 4K USB MCU LS 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 128 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C631xx
Program Memory Type: OTP (4kB)
Applications: USB Microcontroller
Core Processor: M8A
Supplier Device Package: 24-QSOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63101C-QXC CY7C63001C%2C63101C.pdf
CY7C63101C-QXC
Виробник: Infineon Technologies
Description: IC MCU 4K USB MCU LS 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 128 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C631xx
Program Memory Type: OTP (4kB)
Applications: USB Microcontroller
Core Processor: M8A
Supplier Device Package: 24-QSOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY91F523DSEPMC-GSE2
CY91F523DSEPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 448KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Last Time Buy
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F522DSEPMC-GS-ERE2
CY91F522DSEPMC-GS-ERE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F525DSEPMC-GTE1
CY91F525DSEPMC-GTE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 832KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F522DSEPMC-GSE2
CY91F522DSEPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F525DSEPMC-GS-ERE2
CY91F525DSEPMC-GS-ERE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 832KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F526DSEPMC-GTE1
CY91F526DSEPMC-GTE1
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY91F526DSEPMC-GSE1
CY91F526DSEPMC-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
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IMW120R045M1XKSA1 Infineon-IMW120R045M1-DataSheet-v02_03-EN.pdf?fileId=5546d46269bda8df0169de34fd2f3a3b
IMW120R045M1XKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+855.86 грн
30+617.18 грн
В кошику  од. на суму  грн.
IRFP4410ZPBF IRFP4410ZPBF.pdf
IRFP4410ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 97A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
товару немає в наявності
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IRFB4020PBF irfb4020pbf.pdf?fileId=5546d462533600a4015356158ffd1e05
IRFB4020PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
на замовлення 6325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.11 грн
50+63.13 грн
100+56.45 грн
500+41.99 грн
1000+38.45 грн
2000+35.48 грн
5000+32.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AIKW30N60CTXKSA1 Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f
AIKW30N60CTXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+434.32 грн
10+320.31 грн
30+291.69 грн
120+249.80 грн
В кошику  од. на суму  грн.
TLE4966H TLE4966x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd85b86f7ad7
TLE4966H
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Part Status: Obsolete
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IRFB4019PBF description irfb4019pbf.pdf?fileId=5546d462533600a40153561587651e03
IRFB4019PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
на замовлення 879 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.74 грн
50+48.73 грн
100+42.85 грн
500+39.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS5482SFXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH
Packaging: Bulk
Part Status: Obsolete
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IM523L6AXKMA1 Infineon-IM523-L6A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181e6167e065baf
IM523L6AXKMA1
Виробник: Infineon Technologies
Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13V ~ 17.5V
Applications: Appliance
Technology: IGBT
Voltage - Load: 0V ~ 450V
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+742.59 грн
14+542.00 грн
28+514.09 грн
112+443.18 грн
252+426.37 грн
В кошику  од. на суму  грн.
IM523S6AXKMA1 Infineon-IM523-S6A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181e616732b5bac
IM523S6AXKMA1
Виробник: Infineon Technologies
Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13V ~ 17.5V
Applications: Appliance
Technology: IGBT
Voltage - Load: 0V ~ 450V
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+698.31 грн
14+507.15 грн
28+480.41 грн
112+413.24 грн
В кошику  од. на суму  грн.
IM523M6AXKMA1 Infineon-IM523-M6A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181e61697295bb5
IM523M6AXKMA1
Виробник: Infineon Technologies
Description: CIPOS MINI
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13V ~ 17.5V
Applications: Appliance
Technology: IGBT
Voltage - Load: 0V ~ 450V
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+659.99 грн
14+479.38 грн
28+454.22 грн
112+390.87 грн
252+375.72 грн
В кошику  од. на суму  грн.
IDW16G65C5XKSA1 IDW16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30433899edae0138a478b3db208c
IDW16G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+537.36 грн
30+413.47 грн
120+369.95 грн
В кошику  од. на суму  грн.
IDH06G65C5XKSA2 IDH06G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a0353dadb5970
IDH06G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 6A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 110 µA @ 650 V
на замовлення 1291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.58 грн
50+116.89 грн
100+96.18 грн
500+81.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDW30G65C5XKSA1 IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca
IDW30G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 220 µA @ 650 V
на замовлення 1201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+915.47 грн
10+777.01 грн
100+672.02 грн
500+571.54 грн
1000+524.24 грн
В кошику  од. на суму  грн.
IDH16G65C5XKSA2 IDH16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06c7efb201a1
IDH16G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO220-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+552.69 грн
50+284.51 грн
100+260.62 грн
500+205.32 грн
1000+203.09 грн
В кошику  од. на суму  грн.
IDW20G65C5XKSA1 IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5
IDW20G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 650V 20A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+650.62 грн
30+360.33 грн
120+306.09 грн
В кошику  од. на суму  грн.
IDL10G65C5XUMA2 Infineon-IDL10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143050c02185c06
IDL10G65C5XUMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
товару немає в наявності
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IDL10G65C5XUMA2 Infineon-IDL10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143050c02185c06
IDL10G65C5XUMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
на замовлення 751 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+313.39 грн
10+209.03 грн
100+153.74 грн
500+121.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MB91F467CBPMCR-GSK5E2
Виробник: Infineon Technologies
Description: IC AUTO MCU 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 30x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 104
DigiKey Programmable: Not Verified
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CG7498AAT
Виробник: Infineon Technologies
Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CG7499AA
Виробник: Infineon Technologies
Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CG7499AAT
Виробник: Infineon Technologies
Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CG7498AA
Виробник: Infineon Technologies
Description: IC SRAM NON VOLATILE 48FBGA
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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ICE5GR2280AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR2280AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 23 W
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ICE5GR2280AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR2280AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 23 W
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TLE4929CXVAM38AAHAMA1 Infineon-TLE4929C-DataSheet-v01_10-EN.pdf?fileId=5546d46265257de8016537ce85935e53
TLE4929CXVAM38AAHAMA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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CYW20819A1KFBG Infineon-AIROC_CYW20819_Bluetooth_Bluetooth_LE_5_2_SoC-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7dba070bf
CYW20819A1KFBG
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 62FBGA
Packaging: Tray
Package / Case: 62-WFBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.045V ~ 1.26V
Power - Output: 4.5dBm
Protocol: Bluetooth v5.2
Current - Receiving: 6.1mA ~ 6.69mA
Data Rate (Max): 3Mbps
Current - Transmitting: 6.16mA ~ 11.28mA
Supplier Device Package: 62-FBGA (4.5x4.5)
GPIO: 22
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, JTAG, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+493.93 грн
10+366.89 грн
25+333.70 грн
80+280.20 грн
230+255.77 грн
490+241.04 грн
980+225.54 грн
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IRS24531DSTRPBF irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814
IRS24531DSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
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