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CYPD2704-09FNXIT CYPD2704-09FNXIT Infineon Technologies Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+64.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CYPD2704-09FNXIT CYPD2704-09FNXIT Infineon Technologies Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+140.50 грн
10+99.87 грн
25+90.93 грн
100+76.14 грн
250+71.76 грн
500+69.12 грн
1000+65.85 грн
Мінімальне замовлення: 3
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GLPB3460G1K1457XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
товару немає в наявності
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XMC1402F064X0064AAXUMA1 XMC1402F064X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 48
DigiKey Programmable: Not Verified
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TLE9180D21QKXUMA1 TLE9180D21QKXUMA1 Infineon Technologies Infineon-TLE9180D-ProductBrief-v01_00-EN.pdf?fileId=5546d4626afcd350016b2d695769726b Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
1900+260.64 грн
Мінімальне замовлення: 1900
В кошику  од. на суму  грн.
TLE9180D21QKXUMA1 TLE9180D21QKXUMA1 Infineon Technologies Infineon-TLE9180D-ProductBrief-v01_00-EN.pdf?fileId=5546d4626afcd350016b2d695769726b Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
1+456.44 грн
10+337.42 грн
25+312.01 грн
100+266.56 грн
250+254.06 грн
500+246.52 грн
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FS100R12KE3OTISBOSA1 Infineon Technologies Description: LPOWECONO
Packaging: Bulk
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AUIRF7342QCT Infineon Technologies Description: AUIRF7320V-15P-CHANNAUTOMOTIMOSF
Packaging: Bulk
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MAX6129BEUK25 Infineon Technologies Description: MAX61ULTRA-LOW-POWSERIVOLTAREFER
Packaging: Bulk
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IPD50P04P4L11AUMA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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IPD50P04P4L11AUMA2 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA2 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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CY8C4146AZE-S265T CY8C4146AZE-S265T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S26KL256SDABHI020 S26KL256SDABHI020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CY9AF142LBQN-G-AVE2 CY9AF142LBQN-G-AVE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
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FF400R06KE3HOSA1 FF400R06KE3HOSA1 Infineon Technologies Infineon-FF400R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a7a560dc Description: IGBT MOD 600V 500A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+9543.99 грн
10+8021.42 грн
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FF400R17KE4EHOSA1 FF400R17KE4EHOSA1 Infineon Technologies Infineon-FF400R17KE4_E-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155fcb33b8637e3 Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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IRS2817DSPBF Infineon Technologies Infineon-Infineon-IRS28x7DS-DS-v01_00-EN-DS-v01_01-EN.pdf?fileId=5546d462602a9dc801604a3dcbd308af Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
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BTS5672EAUMA2 BTS5672EAUMA2 Infineon Technologies BTS5672E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
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CY9AF142LBPMC1-G-JNE2 CY9AF142LBPMC1-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+686.98 грн
10+597.33 грн
25+569.57 грн
160+464.10 грн
320+443.25 грн
480+404.14 грн
960+346.22 грн
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TZ740N22KOFTIMHDSA1 Infineon Technologies Description: MODULE
Packaging: Bulk
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TZ740N22KOFB1TIMHDSA1 Infineon Technologies Description: MODULE
Packaging: Bulk
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CY62128ELL-45ZXA CY62128ELL-45ZXA Infineon Technologies Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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DZ1070N18KHPSA3 DZ1070N18KHPSA3 Infineon Technologies Infineon-DZ1070N18K-DS-v03_02-en_de.pdf?fileId=5546d4614755559a0147a145459a6377 Description: DIODE STD 1800V 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+32103.37 грн
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DZ1070N22KHPSA3 DZ1070N22KHPSA3 Infineon Technologies Infineon-DZ1070N22K-DS-v03_03-EN.pdf?fileId=5546d461464245d3014666990cf460f1 Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+35296.09 грн
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DZ1070N26KHPSA1 DZ1070N26KHPSA1 Infineon Technologies Infineon-DZ1070N26K-DS-v03_01-EN.pdf?fileId=5546d46259d9a4bf015a219a683a284c Description: DIODE GP 2.6KV 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
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DZ1070N28KHPSA1 DZ1070N28KHPSA1 Infineon Technologies Infineon-DZ1070N28K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669acbfb60f5 Description: DIODE GP 2.8KV 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
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DZ1070N22KTIMHDSA1 Infineon Technologies Description: MODULE
Packaging: Bulk
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FF650R17IE4VBOSA1 FF650R17IE4VBOSA1 Infineon Technologies Infineon-FF650R17IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5885c310942 Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товару немає в наявності
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FZ1200R33HE3BPSA1 FZ1200R33HE3BPSA1 Infineon Technologies Infineon-FZ1200R33HE3-DS-v03_01-en_de.pdf?fileId=db3a304327b8975001283eeed2944021 Description: IGBT MODULE 3300V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 13000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 210 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PVX6012PBF PVX6012PBF Infineon Technologies pvx6012.pdf?fileId=5546d462533600a40153568456b52979 description Description: SSR RELAY SPST-NO 1A 0-280V
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 14-DIP
Voltage - Load: 0 V ~ 280 V
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
товару немає в наявності
В кошику  од. на суму  грн.
PX7510EDSGCS10060XUMA1 Infineon Technologies Description: PX7510EDSG - PRIMERION PMBUS COM
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
251+88.70 грн
Мінімальне замовлення: 251
В кошику  од. на суму  грн.
IRG4PC50KDPBF IRG4PC50KDPBF Infineon Technologies irg4pc50kdpbf.pdf?fileId=5546d462533600a40153564461bb22ea description Description: IGBT 600V 52A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/150ns
Switching Energy: 1.61mJ (on), 840µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ65R125CFD7XTMA1 IPDQ65R125CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
2+237.53 грн
10+172.22 грн
25+158.02 грн
100+133.68 грн
250+126.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPDQ65R060CFD7XTMA1 IPDQ65R060CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
1+444.02 грн
10+327.63 грн
25+302.68 грн
100+258.34 грн
250+246.07 грн
В кошику  од. на суму  грн.
IPDQ65R040CFD7XTMA1 IPDQ65R040CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
1+596.94 грн
10+445.14 грн
25+412.74 грн
100+353.92 грн
250+337.98 грн
В кошику  од. на суму  грн.
IPDQ65R029CFD7XTMA1 IPDQ65R029CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
1+787.89 грн
10+593.07 грн
25+551.68 грн
100+475.04 грн
250+454.69 грн
В кошику  од. на суму  грн.
IPDQ65R017CFD7XTMA1 IPDQ65R017CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
1+1097.62 грн
10+836.23 грн
25+781.11 грн
100+676.18 грн
250+649.08 грн
В кошику  од. на суму  грн.
IPDQ65R080CFD7XTMA1 IPDQ65R080CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R080CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff8249778e Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
750+191.68 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
IPDQ65R080CFD7XTMA1 IPDQ65R080CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R080CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff8249778e Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+464.97 грн
10+301.39 грн
100+218.20 грн
В кошику  од. на суму  грн.
IPDQ60R035CFD7XTMA1 IPDQ60R035CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Drain to Source Voltage (Vdss): 600 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+669.90 грн
10+501.20 грн
25+465.30 грн
100+399.69 грн
250+382.05 грн
В кошику  од. на суму  грн.
IPDQ60R025CFD7XTMA1 IPDQ60R025CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R025CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6dd7e7dbf Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
товару немає в наявності
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IPDQ60R025CFD7XTMA1 IPDQ60R025CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R025CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6dd7e7dbf Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
1+983.51 грн
10+663.33 грн
100+503.21 грн
В кошику  од. на суму  грн.
IPDQ60R020CFD7XTMA1 IPDQ60R020CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R020CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6ee517dc2 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
750+672.56 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
IPDQ60R020CFD7XTMA1 IPDQ60R020CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R020CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6ee517dc2 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+1212.50 грн
10+827.86 грн
100+647.66 грн
В кошику  од. на суму  грн.
IPDQ60R015CFD7XTMA1 IPDQ60R015CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R015CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6cd157dbc Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ60R015CFD7XTMA1 IPDQ60R015CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R015CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6cd157dbc Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
товару немає в наявності
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CY8C4025AZQ-S403 CY8C4025AZQ-S403 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
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FP35R12KT4PBPSA1 FP35R12KT4PBPSA1 Infineon Technologies Infineon-FP35R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb011f03fb Description: IGBT MOD 1200V 70A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
3+8045.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FP35R12KT4PBPSA1 FP35R12KT4PBPSA1 Infineon Technologies Infineon-FP35R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb011f03fb Description: IGBT MOD 1200V 70A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
товару немає в наявності
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FP35R12KT4B16BOSA1 Infineon Technologies Infineon-FP35R12KT4-DS-v02_00-en_cn.pdf?fileId=db3a30433dcea2e4013dcec5ad340031 Description: FP35R12 - IGBT MODULE
Packaging: Bulk
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
4+7132.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FP35R12KT4BOSA1 Infineon Technologies Infineon-FP35R12KT4-DS-v02_00-en_cn.pdf?fileId=db3a30433dcea2e4013dcec5ad340031 Description: FP35R12 - IGBT MODULE
Packaging: Bulk
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S29CD016J0MQFM030 S29CD016J0MQFM030 Infineon Technologies Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam Description: IC FLASH 16MBIT PAR 56MHZ 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-PQFP (14x20)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
1+364.06 грн
10+322.62 грн
25+319.78 грн
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IPD040N08NF2SATMA1 IPD040N08NF2SATMA1 Infineon Technologies Infineon-IPD040N08NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181b3cdad3f51b4 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 1858 шт:
термін постачання 21-31 дні (днів)
2+176.21 грн
10+116.01 грн
100+81.10 грн
500+61.30 грн
1000+56.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD040N08NF2SATMA1 IPD040N08NF2SATMA1 Infineon Technologies Infineon-IPD040N08NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181b3cdad3f51b4 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
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CY9BF617TBGL-GK7E1 CY9BF617TBGL-GK7E1 Infineon Technologies download Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
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IRFP4868PBF IRFP4868PBF Infineon Technologies irfp4868pbf.pdf?fileId=5546d462533600a40153562c9c822023 Description: MOSFET N-CH 300V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
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CY25404ZXI243 Infineon Technologies Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY2545QC020T CY2545QC020T Infineon Technologies Description: IC FANOUT DIST 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CYPD2704-09FNXIT Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CYPD2704-09FNXIT
Виробник: Infineon Technologies
Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+64.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CYPD2704-09FNXIT Infineon-EZ-PD_CMG1_Datasheet_USB-C_EMCA_Controller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4bb726be8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CYPD2704-09FNXIT
Виробник: Infineon Technologies
Description: IC USB-C CONTROLER THNDRBLT 9CSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: USB Type C
Supplier Device Package: 9-WLCSP (1.38x1.35)
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.50 грн
10+99.87 грн
25+90.93 грн
100+76.14 грн
250+71.76 грн
500+69.12 грн
1000+65.85 грн
Мінімальне замовлення: 3
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GLPB3460G1K1457XPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
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XMC1402F064X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402F064X0064AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 48
DigiKey Programmable: Not Verified
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TLE9180D21QKXUMA1 Infineon-TLE9180D-ProductBrief-v01_00-EN.pdf?fileId=5546d4626afcd350016b2d695769726b
TLE9180D21QKXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1900+260.64 грн
Мінімальне замовлення: 1900
В кошику  од. на суму  грн.
TLE9180D21QKXUMA1 Infineon-TLE9180D-ProductBrief-v01_00-EN.pdf?fileId=5546d4626afcd350016b2d695769726b
TLE9180D21QKXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: TTL
Supplier Device Package: PG-LQFP-64-27
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+456.44 грн
10+337.42 грн
25+312.01 грн
100+266.56 грн
250+254.06 грн
500+246.52 грн
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FS100R12KE3OTISBOSA1
Виробник: Infineon Technologies
Description: LPOWECONO
Packaging: Bulk
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AUIRF7342QCT
Виробник: Infineon Technologies
Description: AUIRF7320V-15P-CHANNAUTOMOTIMOSF
Packaging: Bulk
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MAX6129BEUK25
Виробник: Infineon Technologies
Description: MAX61ULTRA-LOW-POWSERIVOLTAREFER
Packaging: Bulk
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IPD50P04P4L11AUMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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IPD50P04P4L11AUMA2
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IPD50P04P413AUMA2
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
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CY8C4146AZE-S265T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146AZE-S265T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S26KL256SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL256SDABHI020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CY9AF142LBQN-G-AVE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142LBQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
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FF400R06KE3HOSA1 Infineon-FF400R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a7a560dc
FF400R06KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 500A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9543.99 грн
10+8021.42 грн
В кошику  од. на суму  грн.
FF400R17KE4EHOSA1 Infineon-FF400R17KE4_E-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155fcb33b8637e3
FF400R17KE4EHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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IRS2817DSPBF Infineon-Infineon-IRS28x7DS-DS-v01_00-EN-DS-v01_01-EN.pdf?fileId=5546d462602a9dc801604a3dcbd308af
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
товару немає в наявності
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BTS5672EAUMA2 BTS5672E.pdf
BTS5672EAUMA2
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Automotive
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
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CY9AF142LBPMC1-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142LBPMC1-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+686.98 грн
10+597.33 грн
25+569.57 грн
160+464.10 грн
320+443.25 грн
480+404.14 грн
960+346.22 грн
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TZ740N22KOFTIMHDSA1
Виробник: Infineon Technologies
Description: MODULE
Packaging: Bulk
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TZ740N22KOFB1TIMHDSA1
Виробник: Infineon Technologies
Description: MODULE
Packaging: Bulk
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CY62128ELL-45ZXA Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
CY62128ELL-45ZXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
DZ1070N18KHPSA3 Infineon-DZ1070N18K-DS-v03_02-en_de.pdf?fileId=5546d4614755559a0147a145459a6377
DZ1070N18KHPSA3
Виробник: Infineon Technologies
Description: DIODE STD 1800V 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+32103.37 грн
В кошику  од. на суму  грн.
DZ1070N22KHPSA3 Infineon-DZ1070N22K-DS-v03_03-EN.pdf?fileId=5546d461464245d3014666990cf460f1
DZ1070N22KHPSA3
Виробник: Infineon Technologies
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+35296.09 грн
В кошику  од. на суму  грн.
DZ1070N26KHPSA1 Infineon-DZ1070N26K-DS-v03_01-EN.pdf?fileId=5546d46259d9a4bf015a219a683a284c
DZ1070N26KHPSA1
Виробник: Infineon Technologies
Description: DIODE GP 2.6KV 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
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DZ1070N28KHPSA1 Infineon-DZ1070N28K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669acbfb60f5
DZ1070N28KHPSA1
Виробник: Infineon Technologies
Description: DIODE GP 2.8KV 1070A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
товару немає в наявності
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DZ1070N22KTIMHDSA1
Виробник: Infineon Technologies
Description: MODULE
Packaging: Bulk
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FF650R17IE4VBOSA1 Infineon-FF650R17IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f5885c310942
FF650R17IE4VBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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FZ1200R33HE3BPSA1 Infineon-FZ1200R33HE3-DS-v03_01-en_de.pdf?fileId=db3a304327b8975001283eeed2944021
FZ1200R33HE3BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 13000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 210 nF @ 25 V
товару немає в наявності
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PVX6012PBF description pvx6012.pdf?fileId=5546d462533600a40153568456b52979
PVX6012PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-280V
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 14-DIP
Voltage - Load: 0 V ~ 280 V
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
товару немає в наявності
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PX7510EDSGCS10060XUMA1
Виробник: Infineon Technologies
Description: PX7510EDSG - PRIMERION PMBUS COM
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
251+88.70 грн
Мінімальне замовлення: 251
В кошику  од. на суму  грн.
IRG4PC50KDPBF description irg4pc50kdpbf.pdf?fileId=5546d462533600a40153564461bb22ea
IRG4PC50KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 52A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/150ns
Switching Energy: 1.61mJ (on), 840µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
товару немає в наявності
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IPDQ65R125CFD7XTMA1 Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5
IPDQ65R125CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.53 грн
10+172.22 грн
25+158.02 грн
100+133.68 грн
250+126.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPDQ65R060CFD7XTMA1 Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b
IPDQ65R060CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+444.02 грн
10+327.63 грн
25+302.68 грн
100+258.34 грн
250+246.07 грн
В кошику  од. на суму  грн.
IPDQ65R040CFD7XTMA1 Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788
IPDQ65R040CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+596.94 грн
10+445.14 грн
25+412.74 грн
100+353.92 грн
250+337.98 грн
В кошику  од. на суму  грн.
IPDQ65R029CFD7XTMA1 Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3
IPDQ65R029CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+787.89 грн
10+593.07 грн
25+551.68 грн
100+475.04 грн
250+454.69 грн
В кошику  од. на суму  грн.
IPDQ65R017CFD7XTMA1 Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0
IPDQ65R017CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1097.62 грн
10+836.23 грн
25+781.11 грн
100+676.18 грн
250+649.08 грн
В кошику  од. на суму  грн.
IPDQ65R080CFD7XTMA1 Infineon-IPDQ65R080CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff8249778e
IPDQ65R080CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+191.68 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
IPDQ65R080CFD7XTMA1 Infineon-IPDQ65R080CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff8249778e
IPDQ65R080CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+464.97 грн
10+301.39 грн
100+218.20 грн
В кошику  од. на суму  грн.
IPDQ60R035CFD7XTMA1 Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c
IPDQ60R035CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Drain to Source Voltage (Vdss): 600 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+669.90 грн
10+501.20 грн
25+465.30 грн
100+399.69 грн
250+382.05 грн
В кошику  од. на суму  грн.
IPDQ60R025CFD7XTMA1 Infineon-IPDQ60R025CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6dd7e7dbf
IPDQ60R025CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
товару немає в наявності
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IPDQ60R025CFD7XTMA1 Infineon-IPDQ60R025CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6dd7e7dbf
IPDQ60R025CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 32.6A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 400 V
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+983.51 грн
10+663.33 грн
100+503.21 грн
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IPDQ60R020CFD7XTMA1 Infineon-IPDQ60R020CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6ee517dc2
IPDQ60R020CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+672.56 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
IPDQ60R020CFD7XTMA1 Infineon-IPDQ60R020CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6ee517dc2
IPDQ60R020CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42.4A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7395 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1212.50 грн
10+827.86 грн
100+647.66 грн
В кошику  од. на суму  грн.
IPDQ60R015CFD7XTMA1 Infineon-IPDQ60R015CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6cd157dbc
IPDQ60R015CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
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IPDQ60R015CFD7XTMA1 Infineon-IPDQ60R015CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c84f2c06701850af6cd157dbc
IPDQ60R015CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
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CY8C4025AZQ-S403 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
CY8C4025AZQ-S403
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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FP35R12KT4PBPSA1 Infineon-FP35R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb011f03fb
FP35R12KT4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8045.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FP35R12KT4PBPSA1 Infineon-FP35R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb011f03fb
FP35R12KT4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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FP35R12KT4B16BOSA1 Infineon-FP35R12KT4-DS-v02_00-en_cn.pdf?fileId=db3a30433dcea2e4013dcec5ad340031
Виробник: Infineon Technologies
Description: FP35R12 - IGBT MODULE
Packaging: Bulk
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+7132.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FP35R12KT4BOSA1 Infineon-FP35R12KT4-DS-v02_00-en_cn.pdf?fileId=db3a30433dcea2e4013dcec5ad340031
Виробник: Infineon Technologies
Description: FP35R12 - IGBT MODULE
Packaging: Bulk
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S29CD016J0MQFM030 Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam
S29CD016J0MQFM030
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-PQFP (14x20)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+364.06 грн
10+322.62 грн
25+319.78 грн
В кошику  од. на суму  грн.
IPD040N08NF2SATMA1 Infineon-IPD040N08NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181b3cdad3f51b4
IPD040N08NF2SATMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 1858 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.21 грн
10+116.01 грн
100+81.10 грн
500+61.30 грн
1000+56.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD040N08NF2SATMA1 Infineon-IPD040N08NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181b3cdad3f51b4
IPD040N08NF2SATMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
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CY9BF617TBGL-GK7E1 download
CY9BF617TBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
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IRFP4868PBF irfp4868pbf.pdf?fileId=5546d462533600a40153562c9c822023
IRFP4868PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
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CY25404ZXI243
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY2545QC020T
CY2545QC020T
Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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