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CY7C1062G30-10BGXIT CY7C1062G30-10BGXIT Infineon Technologies Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Description: IC SRAM 16MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY7C1356C-250AXC CY7C1356C-250AXC Infineon Technologies download Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
на замовлення 1216 шт:
термін постачання 21-31 дні (днів)
1+830.72 грн
10+742.43 грн
25+719.27 грн
72+650.07 грн
144+633.94 грн
288+618.01 грн
504+597.63 грн
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CY7C1370KV33-200BZXI CY7C1370KV33-200BZXI Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
1+2711.09 грн
10+2413.33 грн
25+2335.54 грн
50+2137.26 грн
136+2059.87 грн
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CY7C1382KV33-200AXC CY7C1382KV33-200AXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
1+2323.11 грн
10+2103.89 грн
25+2030.91 грн
72+1845.65 грн
144+1624.70 грн
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IRS2181PBF IRS2181PBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 8535 шт:
термін постачання 21-31 дні (днів)
105+203.82 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
IRS2181PBF IRS2181PBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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S29CD016J0MFAM010 S29CD016J0MFAM010 Infineon Technologies Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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S29CD016J0MFAM013 S29CD016J0MFAM013 Infineon Technologies Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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S29CL016J1MFFM030 S29CL016J1MFFM030 Infineon Technologies Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY8C4146LQA-S263 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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STT800N16P55XPSA2 Infineon Technologies Infineon-STT800N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc21fe071751 Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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STT800N18P55XPSA2 Infineon Technologies Infineon-STT800N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc9961ca5665 Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
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IPP60R600P7XKSA1 IPP60R600P7XKSA1 Infineon Technologies Infineon-IPP60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5beed8a13f5a Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
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CY9BF364KPMC-G-JNE2 CY9BF364KPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1+367.06 грн
10+270.99 грн
25+250.31 грн
80+216.52 грн
250+216.35 грн
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AUIRF7484QTR AUIRF7484QTR Infineon Technologies auirf7484q.pdf?fileId=5546d462533600a4015355ad64e113e8 Description: MOSFET N CH 40V 14A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Qualification: AEC-Q101
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CY7C1041G30-10BAJXE CY7C1041G30-10BAJXE Infineon Technologies Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)
1+833.94 грн
10+712.82 грн
25+679.68 грн
40+622.47 грн
80+600.45 грн
230+568.35 грн
480+538.00 грн
960+518.89 грн
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CY14B104NA-ZS20XI CY14B104NA-ZS20XI Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
1+2162.11 грн
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BSM200GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 420A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GB120DLCE3256HOSA1 Infineon Technologies Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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IPF049N10NF2SATMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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MC33771ATP5AE551 Infineon Technologies Description: MC337LI-IBATTECECONTROLLER
Packaging: Tray
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CY91F526KSEPMC-GSE1 Infineon Technologies Description: IC MCU 32BT 1.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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FF401R17KF6CB2NOSA1 Infineon Technologies INFNS28398-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
NTC Thermistor: No
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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S29GL128S11TFIV20 S29GL128S11TFIV20 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Verified
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BTS5200ENADAUGHBRDTOBO1 BTS5200ENADAUGHBRDTOBO1 Infineon Technologies Profet+_Demoboard_V14.pdf?fileId=5546d4614815da8801484091b947131c Description: PROFET BTS5200-ENA DAUGHTER
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS5200-1ENA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3701.19 грн
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SIGC156T60NR2CX1SA2 Infineon Technologies SIGC156T60NR2C_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 180ns/285ns
Test Condition: 300V, 200A, 1.5Ohm, 15V
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
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S25FL064LABBHN033 S25FL064LABBHN033 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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SHRDIN933M8X18HPSA1 Infineon Technologies Description: SCR MODULE POWERBLOCK
Packaging: Tray
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CY95F718JPMC-G-UNE2 CY95F718JPMC-G-UNE2 Infineon Technologies Infineon-CY95710M_Series_CY95770M_Series_New_8FX_8-bit_Microcontrollers-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd7d0e61f2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC MCU 8BIT 60KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 75
DigiKey Programmable: Not Verified
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CY95F718ENPMC1-G-UNE2 CY95F718ENPMC1-G-UNE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 71
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CY9AF156MBBGL-GK9E1 CY9AF156MBBGL-GK9E1 Infineon Technologies Infineon-FM3_MB9A150RB_Series_32-bit_ARM_Cortex-M3_based_Microcontroller_Datasheet-DataSheet-v06_00-JA.pdf?fileId=8ac78c8c7d0d8da4017d0edfea14654e Description: IC MCU 32BIT 544KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY62168DV30LL-55BVI CY62168DV30LL-55BVI Infineon Technologies Infineon-CY62168DV30_MoBL_16-Mbit_(2_M_8)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed94132c2 Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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2EDR8258XXUMA1 2EDR8258XXUMA1 Infineon Technologies Infineon-2EDR7259X-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c85c38e410185c577a0331b16 Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
на замовлення 1558 шт:
термін постачання 21-31 дні (днів)
3+121.55 грн
10+86.04 грн
25+78.20 грн
100+65.34 грн
250+61.50 грн
500+59.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR9259XXUMA1 2EDR9259XXUMA1 Infineon Technologies Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319 Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товару немає в наявності
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2EDR9259XXUMA1 2EDR9259XXUMA1 Infineon Technologies Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319 Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 1154 шт:
термін постачання 21-31 дні (днів)
3+137.65 грн
10+97.75 грн
25+88.92 грн
100+74.34 грн
250+70.00 грн
500+67.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR8259XXUMA1 2EDR8259XXUMA1 Infineon Technologies Infineon-2EDR8259X-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6eefabe111d Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
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2EDR8259XXUMA1 2EDR8259XXUMA1 Infineon Technologies Infineon-2EDR8259X-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6eefabe111d Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 635 шт:
термін постачання 21-31 дні (днів)
3+121.55 грн
10+86.04 грн
25+78.20 грн
100+65.34 грн
250+61.50 грн
500+59.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR7259XXUMA1 2EDR7259XXUMA1 Infineon Technologies Infineon-2EDR7259X-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c85c38e410185c577a0331b16 Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товару немає в наявності
В кошику  од. на суму  грн.
2EDR7259XXUMA1 2EDR7259XXUMA1 Infineon Technologies Infineon-2EDR7259X-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c85c38e410185c577a0331b16 Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)
3+137.65 грн
10+97.75 грн
25+88.92 грн
100+74.34 грн
250+70.00 грн
500+67.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR9258XXUMA1 2EDR9258XXUMA1 Infineon Technologies Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319 Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
2EDR9258XXUMA1 2EDR9258XXUMA1 Infineon Technologies Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319 Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)
2+286.56 грн
10+247.58 грн
25+234.06 грн
100+190.37 грн
250+180.61 грн
500+162.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C27443-24PVXIT CY8C27443-24PVXIT Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+491.18 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY8C27443-24PVXIT CY8C27443-24PVXIT Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 1774 шт:
термін постачання 21-31 дні (днів)
1+804.96 грн
10+607.09 грн
25+565.17 грн
100+487.14 грн
250+466.53 грн
500+454.11 грн
В кошику  од. на суму  грн.
CY8C4146AZE-S275 CY8C4146AZE-S275 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MB89935BPFV-G-236-BND-ER MB89935BPFV-G-236-BND-ER Infineon Technologies Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
товару немає в наявності
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SPP15P10P SPP15P10P Infineon Technologies SPP15P10P_G.pdf Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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PXM1310CDMG003XTMA1 PXM1310CDMG003XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PRIMARION CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+212.58 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
PXM1310CPMG003XTMA1 PXM1310CPMG003XTMA1 Infineon Technologies Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+461.24 грн
10+398.73 грн
25+376.97 грн
100+306.60 грн
250+290.88 грн
500+261.00 грн
1000+216.51 грн
В кошику  од. на суму  грн.
PXM1330CDNG003XTMA1 Infineon Technologies Description: IC CTLR PRIMARION 48VQFN
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+274.81 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
PXM1330CDNG003XTMA1 Infineon Technologies Description: IC CTLR PRIMARION 48VQFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+503.10 грн
10+437.65 грн
25+417.31 грн
100+340.04 грн
250+324.76 грн
500+296.10 грн
1000+253.67 грн
В кошику  од. на суму  грн.
IPA65R600E6XKSA1 IPA65R600E6XKSA1 Infineon Technologies IPA65R600E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304329a0f6ee0129d1468380061e Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPI65R600C6XKSA1 IPI65R600C6XKSA1 Infineon Technologies IPI65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac744ef772c60 Description: MOSFET N-CH 650V 7.3A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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CY24901ZXC CY24901ZXC Infineon Technologies Clocks_Buffers%20Selector%20Guide.pdf Description: IC SS CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Spread Spectrum Clock Generator
Input: CMOS
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Supplier Device Package: 8-TSSOP
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 4871 шт:
термін постачання 21-31 дні (днів)
123+181.32 грн
Мінімальне замовлення: 123
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IR2520DPBF IR2520DPBF Infineon Technologies ir2520d.pdf?fileId=5546d462533600a4015355c9af7e16e4 description Description: IC BALLAST CNTRL 86KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 34kHz ~ 86kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.4V ~ 15.4V
Supplier Device Package: 8-PDIP
Dimming: No
Current - Supply: 10 mA
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IPP50R250CPXKSA1 IPP50R250CPXKSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01238524b91c65ce Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
3+160.19 грн
50+73.87 грн
100+69.46 грн
500+52.61 грн
Мінімальне замовлення: 3
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BTS5460SFXUMA1 BTS5460SFXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.5mOhm, 11mOhm
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 3:4
Supplier Device Package: PG-DSO-36-43
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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AUIRFR2407TRL AUIRFR2407TRL Infineon Technologies AUIRFR2407.pdf Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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PMC41420AUMA1 Infineon Technologies Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
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PMC41430AUMA1 Infineon Technologies Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
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PMC41570AUMA1 Infineon Technologies Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CY7C1062G30-10BGXIT Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
CY7C1062G30-10BGXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY7C1356C-250AXC download
CY7C1356C-250AXC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
на замовлення 1216 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+830.72 грн
10+742.43 грн
25+719.27 грн
72+650.07 грн
144+633.94 грн
288+618.01 грн
504+597.63 грн
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CY7C1370KV33-200BZXI Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-200BZXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2711.09 грн
10+2413.33 грн
25+2335.54 грн
50+2137.26 грн
136+2059.87 грн
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CY7C1382KV33-200AXC download
CY7C1382KV33-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2323.11 грн
10+2103.89 грн
25+2030.91 грн
72+1845.65 грн
144+1624.70 грн
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IRS2181PBF description INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS2181PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 8535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
105+203.82 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
IRS2181PBF description INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS2181PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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S29CD016J0MFAM010 Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam
S29CD016J0MFAM010
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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S29CD016J0MFAM013 Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam
S29CD016J0MFAM013
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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S29CL016J1MFFM030 Infineon-29CD032J_S29CD016J_S29CL032J_S29CL016J_32_16_Mbit_2.6_3.3_V_Dual_Boot_Simultaneous_Read_Write_Burst_Flash-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7b12d5913&utm_source=cypress&utm_medium=referral&utm_cam
S29CL016J1MFFM030
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY8C4146LQA-S263 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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STT800N16P55XPSA2 Infineon-STT800N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc21fe071751
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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STT800N18P55XPSA2 Infineon-STT800N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc9961ca5665
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
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IPP60R600P7XKSA1 Infineon-IPP60R600P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5beed8a13f5a
IPP60R600P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
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CY9BF364KPMC-G-JNE2 download
CY9BF364KPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+367.06 грн
10+270.99 грн
25+250.31 грн
80+216.52 грн
250+216.35 грн
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AUIRF7484QTR auirf7484q.pdf?fileId=5546d462533600a4015355ad64e113e8
AUIRF7484QTR
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 14A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Qualification: AEC-Q101
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CY7C1041G30-10BAJXE Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY7C1041G30-10BAJXE
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+833.94 грн
10+712.82 грн
25+679.68 грн
40+622.47 грн
80+600.45 грн
230+568.35 грн
480+538.00 грн
960+518.89 грн
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CY14B104NA-ZS20XI download
CY14B104NA-ZS20XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2162.11 грн
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BSM200GB120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 420A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GB120DLCE3256HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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IPF049N10NF2SATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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MC33771ATP5AE551
Виробник: Infineon Technologies
Description: MC337LI-IBATTECECONTROLLER
Packaging: Tray
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CY91F526KSEPMC-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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FF401R17KF6CB2NOSA1 INFNS28398-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
NTC Thermistor: No
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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S29GL128S11TFIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S11TFIV20
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Verified
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BTS5200ENADAUGHBRDTOBO1 Profet+_Demoboard_V14.pdf?fileId=5546d4614815da8801484091b947131c
BTS5200ENADAUGHBRDTOBO1
Виробник: Infineon Technologies
Description: PROFET BTS5200-ENA DAUGHTER
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS5200-1ENA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3701.19 грн
В кошику  од. на суму  грн.
SIGC156T60NR2CX1SA2 SIGC156T60NR2C_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 180ns/285ns
Test Condition: 300V, 200A, 1.5Ohm, 15V
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
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S25FL064LABBHN033 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABBHN033
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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SHRDIN933M8X18HPSA1
Виробник: Infineon Technologies
Description: SCR MODULE POWERBLOCK
Packaging: Tray
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CY95F718JPMC-G-UNE2 Infineon-CY95710M_Series_CY95770M_Series_New_8FX_8-bit_Microcontrollers-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd7d0e61f2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CY95F718JPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 75
DigiKey Programmable: Not Verified
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CY95F718ENPMC1-G-UNE2
CY95F718ENPMC1-G-UNE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 71
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CY9AF156MBBGL-GK9E1 Infineon-FM3_MB9A150RB_Series_32-bit_ARM_Cortex-M3_based_Microcontroller_Datasheet-DataSheet-v06_00-JA.pdf?fileId=8ac78c8c7d0d8da4017d0edfea14654e
CY9AF156MBBGL-GK9E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY62168DV30LL-55BVI Infineon-CY62168DV30_MoBL_16-Mbit_(2_M_8)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed94132c2
CY62168DV30LL-55BVI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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2EDR8258XXUMA1 Infineon-2EDR7259X-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c85c38e410185c577a0331b16
2EDR8258XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
на замовлення 1558 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.55 грн
10+86.04 грн
25+78.20 грн
100+65.34 грн
250+61.50 грн
500+59.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR9259XXUMA1 Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319
2EDR9259XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товару немає в наявності
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2EDR9259XXUMA1 Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319
2EDR9259XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 1154 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.65 грн
10+97.75 грн
25+88.92 грн
100+74.34 грн
250+70.00 грн
500+67.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR8259XXUMA1 Infineon-2EDR8259X-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6eefabe111d
2EDR8259XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товару немає в наявності
В кошику  од. на суму  грн.
2EDR8259XXUMA1 Infineon-2EDR8259X-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6eefabe111d
2EDR8259XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 635 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.55 грн
10+86.04 грн
25+78.20 грн
100+65.34 грн
250+61.50 грн
500+59.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR7259XXUMA1 Infineon-2EDR7259X-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c85c38e410185c577a0331b16
2EDR7259XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товару немає в наявності
В кошику  од. на суму  грн.
2EDR7259XXUMA1 Infineon-2EDR7259X-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c85c38e410185c577a0331b16
2EDR7259XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.65 грн
10+97.75 грн
25+88.92 грн
100+74.34 грн
250+70.00 грн
500+67.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDR9258XXUMA1 Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319
2EDR9258XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
2EDR9258XXUMA1 Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319
2EDR9258XXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+286.56 грн
10+247.58 грн
25+234.06 грн
100+190.37 грн
250+180.61 грн
500+162.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C27443-24PVXIT download
CY8C27443-24PVXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+491.18 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY8C27443-24PVXIT download
CY8C27443-24PVXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 1774 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+804.96 грн
10+607.09 грн
25+565.17 грн
100+487.14 грн
250+466.53 грн
500+454.11 грн
В кошику  од. на суму  грн.
CY8C4146AZE-S275 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146AZE-S275
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MB89935BPFV-G-236-BND-ER
MB89935BPFV-G-236-BND-ER
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
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SPP15P10P SPP15P10P_G.pdf
SPP15P10P
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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PXM1310CDMG003XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXM1310CDMG003XTMA1
Виробник: Infineon Technologies
Description: PRIMARION CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+212.58 грн
Мінімальне замовлення: 4000
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PXM1310CPMG003XTMA1
PXM1310CPMG003XTMA1
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+461.24 грн
10+398.73 грн
25+376.97 грн
100+306.60 грн
250+290.88 грн
500+261.00 грн
1000+216.51 грн
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PXM1330CDNG003XTMA1
Виробник: Infineon Technologies
Description: IC CTLR PRIMARION 48VQFN
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+274.81 грн
Мінімальне замовлення: 4000
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PXM1330CDNG003XTMA1
Виробник: Infineon Technologies
Description: IC CTLR PRIMARION 48VQFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+503.10 грн
10+437.65 грн
25+417.31 грн
100+340.04 грн
250+324.76 грн
500+296.10 грн
1000+253.67 грн
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IPA65R600E6XKSA1 IPA65R600E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304329a0f6ee0129d1468380061e
IPA65R600E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPI65R600C6XKSA1 IPI65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac744ef772c60
IPI65R600C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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CY24901ZXC Clocks_Buffers%20Selector%20Guide.pdf
CY24901ZXC
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Spread Spectrum Clock Generator
Input: CMOS
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Supplier Device Package: 8-TSSOP
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 4871 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
123+181.32 грн
Мінімальне замовлення: 123
В кошику  од. на суму  грн.
IR2520DPBF description ir2520d.pdf?fileId=5546d462533600a4015355c9af7e16e4
IR2520DPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 86KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 34kHz ~ 86kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.4V ~ 15.4V
Supplier Device Package: 8-PDIP
Dimming: No
Current - Supply: 10 mA
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IPP50R250CPXKSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01238524b91c65ce
IPP50R250CPXKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.19 грн
50+73.87 грн
100+69.46 грн
500+52.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS5460SFXUMA1 Part_Number_Guide_Web.pdf
BTS5460SFXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.5mOhm, 11mOhm
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 3:4
Supplier Device Package: PG-DSO-36-43
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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AUIRFR2407TRL AUIRFR2407.pdf
AUIRFR2407TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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PMC41420AUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
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PMC41430AUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
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PMC41570AUMA1
Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
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