Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149007) > Сторінка 649 з 2484
Фото | Назва | Виробник | Інформація |
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IKQ150N65EH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-46 Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 84 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/341ns Switching Energy: 5.8mJ (on), 5.4mJ (off) Test Condition: 400V, 150A, 10Ohm, 15V Gate Charge: 301 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 621 W |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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IPP072N10N3GXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V |
на замовлення 1038 шт: термін постачання 21-31 дні (днів) |
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IR3888AMTRPBFAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 25A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-22-2 Synchronous Rectifier: Yes Voltage - Output (Max): 6V Voltage - Input (Min): 2V Voltage - Output (Min/Fixed): 0.6V |
товару немає в наявності |
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IR3888AMTRPBFAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 25A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-22-2 Synchronous Rectifier: Yes Voltage - Output (Max): 6V Voltage - Input (Min): 2V Voltage - Output (Min/Fixed): 0.6V |
на замовлення 4649 шт: термін постачання 21-31 дні (днів) |
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ASP1211-A60NT | Infineon Technologies |
Description: IC REGULATOR PG-VQFN-56-901 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY8C4147AZE-S245 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 20x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 54 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R420CFDATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO252-3-341 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IPA65R420CFDXKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 31.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
на замовлення 460 шт: термін постачання 21-31 дні (днів) |
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CY7C1062G30-10BGXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 119-BGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 119-PBGA (14x22) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 32 DigiKey Programmable: Not Verified |
на замовлення 118 шт: термін постачання 21-31 дні (днів) |
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CY7C1062G30-10BGXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 119-BGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 119-PBGA (14x22) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1356C-250AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 2.8 ns Memory Organization: 512K x 18 DigiKey Programmable: Not Verified |
на замовлення 1216 шт: термін постачання 21-31 дні (днів) |
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CY7C1370KV33-200BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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CY7C1382KV33-200AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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IRS2181PBF | Infineon Technologies |
![]() ![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A DigiKey Programmable: Not Verified |
на замовлення 8535 шт: термін постачання 21-31 дні (днів) |
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IRS2181PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29CD016J0MFAM010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-LBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2.75V Technology: FLASH - NOR Clock Frequency: 56 MHz Memory Format: FLASH Supplier Device Package: 80-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 54 ns Memory Organization: 512K x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29CD016J0MFAM013 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-LBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2.75V Technology: FLASH - NOR Clock Frequency: 56 MHz Memory Format: FLASH Supplier Device Package: 80-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 54 ns Memory Organization: 512K x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29CL016J1MFFM030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-LBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 56 MHz Memory Format: FLASH Supplier Device Package: 80-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 54 ns Memory Organization: 512K x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
CY8C4146LQA-S263 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Number of I/O: 34 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STT800N16P55XPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STT800N18P55XPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.8 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP60R600P7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9BF364KPMC-G-JNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 8x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 33 DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AUIRF7484QTR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 7V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1041G30-10BAJXE | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-FBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 1059 шт: термін постачання 21-31 дні (днів) |
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CY14B104NA-ZS20XI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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BSM200GB120DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 420A 1550W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 420 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BSM200GB120DLCE3256HOSA1 | Infineon Technologies |
Description: IGBT MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 420 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
IPF049N10NF2SATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC33771ATP5AE551 | Infineon Technologies |
Description: MC337LI-IBATTECECONTROLLER Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CY91F526KSEPMC-GSE1 | Infineon Technologies |
Description: IC MCU 32BT 1.0625MB FLSH 144QFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.0625MB (1.0625M x 8) RAM Size: 136K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FF401R17KF6CB2NOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A NTC Thermistor: No Current - Collector (Ic) (Max): 650 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 3150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 27 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S29GL128S11TFIV20 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 8M x 16 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS5200ENADAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS5200-1ENA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SIGC156T60NR2CX1SA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 180ns/285ns Test Condition: 300V, 200A, 1.5Ohm, 15V Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S25FL064LABBHN033 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SHRDIN933M8X18HPSA1 | Infineon Technologies |
Description: SCR MODULE POWERBLOCK Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY95F718JPMC-G-UNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SIO, UART/USART Peripherals: LCD, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 75 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY95F718ENPMC1-G-UNE2 | Infineon Technologies |
Description: MULTI-MARKET MCUS Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 16.25MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SIO, UART/USART Peripherals: LCD, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9AF156MBBGL-GK9E1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 544KB (544K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY62168DV30LL-55BVI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (8x9.5) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDR8258XXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 5A, 9A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 1 |
на замовлення 1558 шт: термін постачання 21-31 дні (днів) |
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2EDR9259XXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDR9259XXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 2 |
на замовлення 1154 шт: термін постачання 21-31 дні (днів) |
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2EDR8259XXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDR8259XXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 2 |
на замовлення 635 шт: термін постачання 21-31 дні (днів) |
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2EDR7259XXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDR7259XXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 2 |
на замовлення 1421 шт: термін постачання 21-31 дні (днів) |
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2EDR9258XXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 5A, 9A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDR9258XXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 5A, 9A Voltage - Isolation: 5700Vrms Approval Agency: UL, VDE Supplier Device Package: PG-DSO-14 Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Number of Channels: 1 |
на замовлення 1423 шт: термін постачання 21-31 дні (днів) |
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CY8C27443-24PVXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CY8C27443-24PVXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Verified |
на замовлення 1774 шт: термін постачання 21-31 дні (днів) |
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CY8C4146AZE-S275 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 20x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 54 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MB89935BPFV-G-236-BND-ER | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 30SSOP Packaging: Bulk Package / Case: 30-LSSOP (0.220", 5.60mm Width) Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: Serial I/O, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 30-SSOP Number of I/O: 21 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPP15P10P | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PXM1310CDMG003XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Voltage - Output: Programmable Mounting Type: Surface Mount Number of Outputs: 6 Voltage - Input: 3V ~ 3.6V Operating Temperature: -5°C ~ 85°C (TA) Applications: Controller, Intel VR12.5 Supplier Device Package: PG-VQFN-40-13 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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PXM1310CPMG003XTMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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PXM1330CDNG003XTMA1 | Infineon Technologies |
Description: IC CTLR PRIMARION 48VQFN Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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PXM1330CDNG003XTMA1 | Infineon Technologies |
Description: IC CTLR PRIMARION 48VQFN Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IPA65R600E6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
IKQ150N65EH7XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/341ns
Switching Energy: 5.8mJ (on), 5.4mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 301 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/341ns
Switching Energy: 5.8mJ (on), 5.4mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 301 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 945.47 грн |
30+ | 551.63 грн |
IPP072N10N3GXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 1038 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 173.88 грн |
50+ | 84.47 грн |
100+ | 79.11 грн |
500+ | 59.85 грн |
1000+ | 53.85 грн |
IR3888AMTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
товару немає в наявності
В кошику
од. на суму грн.
IR3888AMTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 4649 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 322.14 грн |
10+ | 235.54 грн |
25+ | 216.83 грн |
100+ | 184.09 грн |
250+ | 174.84 грн |
500+ | 169.27 грн |
1000+ | 161.98 грн |
2500+ | 157.22 грн |
CY8C4147AZE-S245 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
IPD65R420CFDATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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IPA65R420CFDXKSA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 31.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 31.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 460 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 205.71 грн |
10+ | 128.27 грн |
100+ | 88.56 грн |
CY7C1062G30-10BGXI |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
на замовлення 118 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3811.39 грн |
10+ | 3389.61 грн |
25+ | 3279.22 грн |
84+ | 2943.28 грн |
CY7C1062G30-10BGXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY7C1356C-250AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
на замовлення 1216 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1056.48 грн |
10+ | 943.57 грн |
25+ | 914.07 грн |
72+ | 826.12 грн |
144+ | 805.60 грн |
288+ | 785.35 грн |
504+ | 756.64 грн |
CY7C1370KV33-200BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 247 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2213.86 грн |
10+ | 1970.48 грн |
25+ | 1907.05 грн |
40+ | 1784.63 грн |
CY7C1382KV33-200AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2240.26 грн |
10+ | 2028.86 грн |
25+ | 1958.48 грн |
72+ | 1779.83 грн |
144+ | 1566.76 грн |
IRS2181PBF | ![]() |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 8535 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
105+ | 196.55 грн |
IRS2181PBF | ![]() |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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S29CD016J0MFAM010 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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S29CD016J0MFAM013 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2.75V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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S29CL016J1MFFM030 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PAR 56MHZ 80FBGA
Packaging: Tray
Package / Case: 80-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 56 MHz
Memory Format: FLASH
Supplier Device Package: 80-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 54 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY8C4146LQA-S263 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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STT800N16P55XPSA2 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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STT800N18P55XPSA2 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
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IPP60R600P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
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CY9BF364KPMC-G-JNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 353.97 грн |
10+ | 261.33 грн |
25+ | 241.38 грн |
80+ | 208.80 грн |
250+ | 208.64 грн |
AUIRF7484QTR |
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Виробник: Infineon Technologies
Description: MOSFET N CH 40V 14A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Description: MOSFET N CH 40V 14A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
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CY7C1041G30-10BAJXE |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 804.20 грн |
10+ | 687.40 грн |
25+ | 655.44 грн |
40+ | 600.27 грн |
80+ | 579.04 грн |
230+ | 548.08 грн |
480+ | 518.82 грн |
960+ | 500.38 грн |
CY14B104NA-ZS20XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 62 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2085.01 грн |
BSM200GB120DLCHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 420A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 420A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GB120DLCE3256HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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CY91F526KSEPMC-GSE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 1.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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FF401R17KF6CB2NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
NTC Thermistor: No
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
NTC Thermistor: No
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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S29GL128S11TFIV20 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Verified
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Verified
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BTS5200ENADAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: PROFET BTS5200-ENA DAUGHTER
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS5200-1ENA
Description: PROFET BTS5200-ENA DAUGHTER
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS5200-1ENA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3569.20 грн |
SIGC156T60NR2CX1SA2 |
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Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 180ns/285ns
Test Condition: 300V, 200A, 1.5Ohm, 15V
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 180ns/285ns
Test Condition: 300V, 200A, 1.5Ohm, 15V
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
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S25FL064LABBHN033 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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CY95F718JPMC-G-UNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 75
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 60KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 75
DigiKey Programmable: Not Verified
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CY95F718ENPMC1-G-UNE2 |
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 71
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 71
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CY9AF156MBBGL-GK9E1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY62168DV30LL-55BVI |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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2EDR8258XXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
на замовлення 1558 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 117.21 грн |
10+ | 82.97 грн |
25+ | 75.41 грн |
100+ | 63.01 грн |
250+ | 59.30 грн |
500+ | 57.07 грн |
2EDR9259XXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
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2EDR9259XXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 1154 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 132.74 грн |
10+ | 94.26 грн |
25+ | 85.75 грн |
100+ | 71.69 грн |
250+ | 67.51 грн |
500+ | 64.98 грн |
2EDR8259XXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товару немає в наявності
В кошику
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2EDR8259XXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 635 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 117.21 грн |
10+ | 82.97 грн |
25+ | 75.41 грн |
100+ | 63.01 грн |
250+ | 59.30 грн |
500+ | 57.07 грн |
2EDR7259XXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
2EDR7259XXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Description: DGTL ISO 5.7KV 2CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 132.74 грн |
10+ | 94.26 грн |
25+ | 85.75 грн |
100+ | 71.69 грн |
250+ | 67.51 грн |
500+ | 64.98 грн |
2EDR9258XXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
2EDR9258XXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
Description: DGTL ISO 5.7KV 1CH GT DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 5A, 9A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-14
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 1
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 276.34 грн |
10+ | 238.75 грн |
25+ | 225.72 грн |
100+ | 183.58 грн |
250+ | 174.17 грн |
500+ | 156.28 грн |
CY8C27443-24PVXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 473.66 грн |
CY8C27443-24PVXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 1774 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 776.25 грн |
10+ | 585.44 грн |
25+ | 545.02 грн |
100+ | 469.77 грн |
250+ | 449.89 грн |
500+ | 437.91 грн |
CY8C4146AZE-S275 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MB89935BPFV-G-236-BND-ER |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
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SPP15P10P |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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PXM1310CDMG003XTMA1 |
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Виробник: Infineon Technologies
Description: PRIMARION CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
Description: PRIMARION CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 205.00 грн |
PXM1310CPMG003XTMA1 |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 444.79 грн |
10+ | 384.51 грн |
25+ | 363.52 грн |
100+ | 295.66 грн |
250+ | 280.50 грн |
500+ | 251.69 грн |
1000+ | 208.79 грн |
PXM1330CDNG003XTMA1 |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 265.01 грн |
PXM1330CDNG003XTMA1 |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 485.16 грн |
10+ | 422.04 грн |
25+ | 402.42 грн |
100+ | 327.92 грн |
250+ | 313.17 грн |
500+ | 285.54 грн |
1000+ | 244.62 грн |
IPA65R600E6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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од. на суму грн.