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CY9BF115NPQC-G-JNE2 CY9BF115NPQC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 416KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (20x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9BF116NPQC-G-JNE2 CY9BF116NPQC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS53 S29GL01GS11FHSS53 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS63 S29GL01GS11FHSS63 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS20 S29GL01GS11FHSS20 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS50 S29GL01GS11FHSS50 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS60 S29GL01GS11FHSS60 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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CYPD2120-20FNXIT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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T1500N18TOFVTXPSA1 T1500N18TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
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TLE42672GATMA1 TLE42672GATMA1 Infineon Technologies Infineon-TLE4267-2G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f95eb6b83e43 Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+235.79 грн
10+170.25 грн
25+155.99 грн
100+131.71 грн
250+124.70 грн
500+120.47 грн
Мінімальне замовлення: 2
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IRS2104PBF IRS2104PBF Infineon Technologies irs2104.pdf?fileId=5546d462533600a40153567633f727a1 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)
3+125.43 грн
10+88.30 грн
50+75.46 грн
100+67.07 грн
250+63.11 грн
500+60.73 грн
1000+57.80 грн
Мінімальне замовлення: 3
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CY2304NZZXC-1 CY2304NZZXC-1 Infineon Technologies Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1407 шт:
термін постачання 21-31 дні (днів)
1+744.67 грн
10+562.74 грн
25+524.19 грн
162+444.41 грн
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IRL1404PBF IRL1404PBF Infineon Technologies irl1404pbf.pdf?fileId=5546d462533600a40153565b382824f0 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
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IRL1404SPBF IRL1404SPBF Infineon Technologies irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IRL1404ZSPBF IRL1404ZSPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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PEF 22508 E V1.1-G Infineon Technologies PEF22508_Rev2.0.pdf Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: Line Interface Unit (LIU)
Interface: E1, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Current - Supply: 370mA
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 8
Power (Watts): 140 mW
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IAUC50N08S5N102ATMA1 IAUC50N08S5N102ATMA1 Infineon Technologies Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4216 шт:
термін постачання 21-31 дні (днів)
3+122.26 грн
10+74.69 грн
100+49.94 грн
500+36.93 грн
1000+33.73 грн
2000+33.15 грн
Мінімальне замовлення: 3
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DDB2U50N08W1RB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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DDB2U50N08W1RB23BOMA1 Infineon Technologies DDB2U50N08W1R_B23_Rev02_2011-02-26.pdf Description: MOD DIODE BRIDGE EASY1B-2-1
Packaging: Tray
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D650N08TXPSA1 D650N08TXPSA1 Infineon Technologies D650N.pdf Description: DIODE GEN PURP 800V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
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IPT65R155CFD7XTMA1 IPT65R155CFD7XTMA1 Infineon Technologies Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+95.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT65R155CFD7XTMA1 IPT65R155CFD7XTMA1 Infineon Technologies Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+284.21 грн
10+179.20 грн
100+125.74 грн
500+105.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPT65R125CFD7XTMA1 IPT65R125CFD7XTMA1 Infineon Technologies Infineon-IPT65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186794f0d9378b0 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+323.91 грн
10+206.64 грн
100+146.51 грн
500+125.47 грн
В кошику  од. на суму  грн.
IMI111T026HXUMA1 IMI111T026HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
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IMI111T026HXUMA1 IMI111T026HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
1+546.99 грн
10+406.78 грн
25+376.71 грн
100+322.47 грн
250+307.67 грн
500+298.76 грн
В кошику  од. на суму  грн.
IMI111T046HXUMA1 IMI111T046HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
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IMI111T046HXUMA1 IMI111T046HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
на замовлення 964 шт:
термін постачання 21-31 дні (днів)
1+600.18 грн
10+447.68 грн
25+415.00 грн
100+355.74 грн
250+339.67 грн
500+329.99 грн
В кошику  од. на суму  грн.
IRS2548DSTRPBF IRS2548DSTRPBF Infineon Technologies irs2548dspbf.pdf?fileId=5546d462533600a40153567b17722830 Description: IC PFC CTRLR CCM 46.5KHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Frequency - Switching: 42.5kHz ~ 46.5kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 14-SOIC
Current - Startup: 250 µA
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IRF7307QTRPBF IRF7307QTRPBF Infineon Technologies IRF7307QPbF.pdf Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
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CY7C4142KV13-106FCXC CY7C4142KV13-106FCXC Infineon Technologies Infineon-CY7C4122KV13_CY7C4142KV13_144-Mbit_QDR-IV_XP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec47d3939f8 Description: IC SRAM 144MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.26V ~ 1.34V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 1.066 GHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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IR21064SPBF IR21064SPBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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ISK024NE2LM5AUSA1 ISK024NE2LM5AUSA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
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TT61N16KOFHPSA1 TT61N16KOFHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
3+8769.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TT61N16KOFKHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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CY8C4147LQS-S263T CY8C4147LQS-S263T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S263T CY8C4147LQS-S263T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
1+532.70 грн
10+395.62 грн
25+366.37 грн
100+313.67 грн
250+299.29 грн
500+290.63 грн
В кошику  од. на суму  грн.
IRS21844PBF IRS21844PBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRLU2905ZPBF IRLU2905ZPBF Infineon Technologies irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c description Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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AUIRLU2905 AUIRLU2905 Infineon Technologies AUIRLR2905.pdf Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB45N06S4L08ATMA3 IPB45N06S4L08ATMA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+50.68 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB45N06S4L08ATMA3 IPB45N06S4L08ATMA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 2986 шт:
термін постачання 21-31 дні (днів)
2+159.57 грн
10+98.24 грн
100+66.68 грн
500+49.88 грн
Мінімальне замовлення: 2
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IRFZ44NSPBF IRFZ44NSPBF Infineon Technologies irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f description Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IRFZ44NLPBF IRFZ44NLPBF Infineon Technologies irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f Description: MOSFET N-CH 55V 49A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 Infineon Technologies Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 Infineon Technologies Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
на замовлення 4265 шт:
термін постачання 21-31 дні (днів)
2+238.17 грн
10+171.47 грн
25+157.12 грн
100+132.66 грн
250+125.61 грн
500+121.36 грн
1000+115.92 грн
2500+112.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQFH55N04NM6ATMA1 IQFH55N04NM6ATMA1 Infineon Technologies Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+137.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XMC4402F64F256BAXQMA1 XMC4402F64F256BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
1+606.53 грн
10+455.79 грн
25+423.71 грн
160+377.80 грн
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T2510N06TOFVTXPSA1 T2510N06TOFVTXPSA1 Infineon Technologies Infineon-T2510N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc20123f1833e6d4128 Description: SCR MODULE 600V 4900A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
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D5810N06TVFXPSA1 D5810N06TVFXPSA1 Infineon Technologies Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70 Description: DIODE GEN PURP 600V 5800A
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+27120.15 грн
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D5810N06TVFXPSA1 D5810N06TVFXPSA1 Infineon Technologies Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70 Description: DIODE GEN PURP 600V 5800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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AUIPS6011STRL AUIPS6011STRL Infineon Technologies AUIPS6011%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS6011S AUIPS6011S Infineon Technologies AUIPS6011%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IMT65R039M1HXUMA1 IMT65R039M1HXUMA1 Infineon Technologies Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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IMT65R039M1HXUMA1 IMT65R039M1HXUMA1 Infineon Technologies Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
1+780.40 грн
10+518.71 грн
100+387.35 грн
500+340.48 грн
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F3L225R07W2H3PB63BPSA1 F3L225R07W2H3PB63BPSA1 Infineon Technologies Infineon-F3L225R07W2H3P_B63-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f3405c1db5680 Description: MODULE IGBT 700V EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 85A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+3856.73 грн
18+3494.90 грн
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S25FL128SDPBHBC03 S25FL128SDPBHBC03 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BCR198B6327HTLA1 BCR198B6327HTLA1 Infineon Technologies bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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IAUA180N10S5N029AUMA1 IAUA180N10S5N029AUMA1 Infineon Technologies Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
2+308.82 грн
10+195.56 грн
100+137.86 грн
500+106.25 грн
1000+98.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRLU9343PBF IRLU9343PBF Infineon Technologies irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702 Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
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CY8C28452-24PVXI CY8C28452-24PVXI Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY9BF115NPQC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF115NPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (20x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9BF116NPQC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF116NPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS53
S29GL01GS11FHSS53
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS63 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL01GS11FHSS63
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS20
S29GL01GS11FHSS20
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS50
S29GL01GS11FHSS50
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHSS60
S29GL01GS11FHSS60
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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CYPD2120-20FNXIT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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T1500N18TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N18TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
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TLE42672GATMA1 Infineon-TLE4267-2G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f95eb6b83e43
TLE42672GATMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+235.79 грн
10+170.25 грн
25+155.99 грн
100+131.71 грн
250+124.70 грн
500+120.47 грн
Мінімальне замовлення: 2
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IRS2104PBF irs2104.pdf?fileId=5546d462533600a40153567633f727a1
IRS2104PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.43 грн
10+88.30 грн
50+75.46 грн
100+67.07 грн
250+63.11 грн
500+60.73 грн
1000+57.80 грн
Мінімальне замовлення: 3
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CY2304NZZXC-1 Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2304NZZXC-1
Виробник: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1407 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+744.67 грн
10+562.74 грн
25+524.19 грн
162+444.41 грн
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IRL1404PBF irl1404pbf.pdf?fileId=5546d462533600a40153565b382824f0
IRL1404PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
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IRL1404SPBF irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2
IRL1404SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IRL1404ZSPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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PEF 22508 E V1.1-G PEF22508_Rev2.0.pdf
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: Line Interface Unit (LIU)
Interface: E1, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Current - Supply: 370mA
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 8
Power (Watts): 140 mW
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IAUC50N08S5N102ATMA1 Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208
IAUC50N08S5N102ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4216 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.26 грн
10+74.69 грн
100+49.94 грн
500+36.93 грн
1000+33.73 грн
2000+33.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DDB2U50N08W1RB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
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DDB2U50N08W1RB23BOMA1 DDB2U50N08W1R_B23_Rev02_2011-02-26.pdf
Виробник: Infineon Technologies
Description: MOD DIODE BRIDGE EASY1B-2-1
Packaging: Tray
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D650N08TXPSA1 D650N.pdf
D650N08TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 800V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
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IPT65R155CFD7XTMA1 Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3
IPT65R155CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+95.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT65R155CFD7XTMA1 Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3
IPT65R155CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+284.21 грн
10+179.20 грн
100+125.74 грн
500+105.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPT65R125CFD7XTMA1 Infineon-IPT65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186794f0d9378b0
IPT65R125CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+323.91 грн
10+206.64 грн
100+146.51 грн
500+125.47 грн
В кошику  од. на суму  грн.
IMI111T026HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T026HXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
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IMI111T026HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T026HXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+546.99 грн
10+406.78 грн
25+376.71 грн
100+322.47 грн
250+307.67 грн
500+298.76 грн
В кошику  од. на суму  грн.
IMI111T046HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T046HXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
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IMI111T046HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T046HXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
на замовлення 964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+600.18 грн
10+447.68 грн
25+415.00 грн
100+355.74 грн
250+339.67 грн
500+329.99 грн
В кошику  од. на суму  грн.
IRS2548DSTRPBF irs2548dspbf.pdf?fileId=5546d462533600a40153567b17722830
IRS2548DSTRPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 46.5KHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Frequency - Switching: 42.5kHz ~ 46.5kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 14-SOIC
Current - Startup: 250 µA
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IRF7307QTRPBF IRF7307QPbF.pdf
IRF7307QTRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
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CY7C4142KV13-106FCXC Infineon-CY7C4122KV13_CY7C4142KV13_144-Mbit_QDR-IV_XP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec47d3939f8
CY7C4142KV13-106FCXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.26V ~ 1.34V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 1.066 GHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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IR21064SPBF ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR21064SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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ISK024NE2LM5AUSA1 Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AUSA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
товару немає в наявності
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TT61N16KOFHPSA1 TT61N.pdf
TT61N16KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8769.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TT61N16KOFKHPSA1 TT61N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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CY8C4147LQS-S263T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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CY8C4147LQS-S263T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+532.70 грн
10+395.62 грн
25+366.37 грн
100+313.67 грн
250+299.29 грн
500+290.63 грн
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IRS21844PBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRLU2905ZPBF description irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLU2905ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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AUIRLU2905 AUIRLR2905.pdf
AUIRLU2905
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB45N06S4L08ATMA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPB45N06S4L08ATMA3
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+50.68 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB45N06S4L08ATMA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPB45N06S4L08ATMA3
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 2986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.57 грн
10+98.24 грн
100+66.68 грн
500+49.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFZ44NSPBF description irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f
IRFZ44NSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IRFZ44NLPBF irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f
IRFZ44NLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IQD005N04NM6CGATMA1 Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533
IQD005N04NM6CGATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6CGATMA1 Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533
IQD005N04NM6CGATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
на замовлення 4265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+238.17 грн
10+171.47 грн
25+157.12 грн
100+132.66 грн
250+125.61 грн
500+121.36 грн
1000+115.92 грн
2500+112.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQFH55N04NM6ATMA1 Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d
IQFH55N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+137.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XMC4402F64F256BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4402F64F256BAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+606.53 грн
10+455.79 грн
25+423.71 грн
160+377.80 грн
В кошику  од. на суму  грн.
T2510N06TOFVTXPSA1 Infineon-T2510N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc20123f1833e6d4128
T2510N06TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 600V 4900A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
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D5810N06TVFXPSA1 Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70
D5810N06TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 5800A
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27120.15 грн
В кошику  од. на суму  грн.
D5810N06TVFXPSA1 Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70
D5810N06TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 5800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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AUIPS6011STRL AUIPS6011%28S%2CR%29.pdf
AUIPS6011STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS6011S AUIPS6011%28S%2CR%29.pdf
AUIPS6011S
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
IMT65R039M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
IMT65R039M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+780.40 грн
10+518.71 грн
100+387.35 грн
500+340.48 грн
В кошику  од. на суму  грн.
F3L225R07W2H3PB63BPSA1 Infineon-F3L225R07W2H3P_B63-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f3405c1db5680
F3L225R07W2H3PB63BPSA1
Виробник: Infineon Technologies
Description: MODULE IGBT 700V EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 85A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3856.73 грн
18+3494.90 грн
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S25FL128SDPBHBC03 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPBHBC03
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BCR198B6327HTLA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
BCR198B6327HTLA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
IAUA180N10S5N029AUMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+308.82 грн
10+195.56 грн
100+137.86 грн
500+106.25 грн
1000+98.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRLU9343PBF irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702
IRLU9343PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
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CY8C28452-24PVXI download
CY8C28452-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
товару немає в наявності
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