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TT61N16KOFKHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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CY8C4147LQS-S263T CY8C4147LQS-S263T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S263T CY8C4147LQS-S263T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 768 шт:
термін постачання 21-31 дні (днів)
1+508.52 грн
10+377.96 грн
25+350.06 грн
100+299.70 грн
250+285.97 грн
500+277.68 грн
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IRS21844PBF IRS21844PBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRLU2905ZPBF IRLU2905ZPBF Infineon Technologies irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c description Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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AUIRLU2905 AUIRLU2905 Infineon Technologies AUIRLR2905.pdf Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB45N06S4L08ATMA3 IPB45N06S4L08ATMA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+50.80 грн
Мінімальне замовлення: 1000
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IPB45N06S4L08ATMA3 IPB45N06S4L08ATMA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 2986 шт:
термін постачання 21-31 дні (днів)
2+159.96 грн
10+98.47 грн
100+66.84 грн
500+50.00 грн
Мінімальне замовлення: 2
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IRFZ44NSPBF IRFZ44NSPBF Infineon Technologies irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f description Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IRFZ44NLPBF IRFZ44NLPBF Infineon Technologies irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f Description: MOSFET N-CH 55V 49A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 Infineon Technologies Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 Infineon Technologies Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
на замовлення 4265 шт:
термін постачання 21-31 дні (днів)
2+238.74 грн
10+171.89 грн
25+157.50 грн
100+132.98 грн
250+125.91 грн
500+121.65 грн
1000+116.20 грн
2500+112.56 грн
Мінімальне замовлення: 2
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IQFH55N04NM6ATMA1 IQFH55N04NM6ATMA1 Infineon Technologies Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+138.11 грн
Мінімальне замовлення: 3000
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XMC4402F64F256BAXQMA1 XMC4402F64F256BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
1+608.00 грн
10+456.89 грн
25+424.73 грн
160+378.71 грн
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T2510N06TOFVTXPSA1 T2510N06TOFVTXPSA1 Infineon Technologies Infineon-T2510N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc20123f1833e6d4128 Description: SCR MODULE 600V 4900A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
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D5810N06TVFXPSA1 D5810N06TVFXPSA1 Infineon Technologies Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70 Description: DIODE GEN PURP 600V 5800A
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+27185.65 грн
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D5810N06TVFXPSA1 D5810N06TVFXPSA1 Infineon Technologies Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70 Description: DIODE GEN PURP 600V 5800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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AUIPS6011STRL AUIPS6011STRL Infineon Technologies AUIPS6011%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS6011S AUIPS6011S Infineon Technologies AUIPS6011%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IMT65R039M1HXUMA1 IMT65R039M1HXUMA1 Infineon Technologies Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
товару немає в наявності
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IMT65R039M1HXUMA1 IMT65R039M1HXUMA1 Infineon Technologies Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
1+782.28 грн
10+519.96 грн
100+388.29 грн
500+341.30 грн
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F3L225R07W2H3PB63BPSA1 F3L225R07W2H3PB63BPSA1 Infineon Technologies Infineon-F3L225R07W2H3P_B63-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f3405c1db5680 Description: MODULE IGBT 700V EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 85A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+3866.04 грн
18+3503.34 грн
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S25FL128SDPBHBC03 S25FL128SDPBHBC03 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BCR198B6327HTLA1 BCR198B6327HTLA1 Infineon Technologies bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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IAUA180N10S5N029AUMA1 IAUA180N10S5N029AUMA1 Infineon Technologies Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
2+309.57 грн
10+196.03 грн
100+138.19 грн
500+106.51 грн
1000+99.17 грн
Мінімальне замовлення: 2
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IRLU9343PBF IRLU9343PBF Infineon Technologies irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702 Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
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CY8C28452-24PVXI CY8C28452-24PVXI Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY2305CSXC-1 CY2305CSXC-1 Infineon Technologies Infineon-CY2305C_CY2309C_3.3_V_Zero_Delay_Clock_Buffer-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec649ec3c6d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2249 шт:
термін постачання 21-31 дні (днів)
78+293.31 грн
Мінімальне замовлення: 78
В кошику  од. на суму  грн.
CY8CMBR2016-24LQXIT CY8CMBR2016-24LQXIT Infineon Technologies Infineon-CY8CMBR2016_CapSense_Express_16_Button_Matrix_Controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7ec1f3fd2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MBR 10 BUTTON 10 LED 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.3mA
Number of Inputs: Up to 16
Supplier Device Package: 48-QFN (6x6)
Proximity Detection: No
LED Driver Channels: Up to 16
DigiKey Programmable: Not Verified
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IPP086N10N3GXKSA1 IPP086N10N3GXKSA1 Infineon Technologies IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
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CY22393FXC CY22393FXC Infineon Technologies Infineon-CY22393_CY223931_CY22394_CY22395_THREE_PLL_SERIAL_PROGRAMMABLE_FLASH_PROGRAMMABLE_CLOCK_GENERATOR-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b89e3555&utm_source=cypress&utm_medium=referral&utm_campaign=20 Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)
1+1576.50 грн
10+1222.15 грн
96+1081.02 грн
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S6J326CLSPSC20000 S6J326CLSPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+2487.70 грн
10+1954.31 грн
40+1881.72 грн
В кошику  од. на суму  грн.
S6J328CLSPSC20000 S6J328CLSPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32BIT 2.0625MB 216TEQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+2623.78 грн
10+2002.28 грн
40+1824.57 грн
В кошику  од. на суму  грн.
IRS2184STRPBF IRS2184STRPBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+63.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2184STRPBF IRS2184STRPBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 3020 шт:
термін постачання 21-31 дні (днів)
3+124.94 грн
10+88.74 грн
25+80.68 грн
100+67.46 грн
250+63.51 грн
500+61.14 грн
1000+58.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFZ44ESPBF IRFZ44ESPBF Infineon Technologies irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208 description Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
товару немає в наявності
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TLE9350VSJXTMA1 TLE9350VSJXTMA1 Infineon Technologies Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259 Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+40.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9350VSJXTMA1 TLE9350VSJXTMA1 Infineon Technologies Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259 Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2683 шт:
термін постачання 21-31 дні (днів)
4+83.56 грн
10+58.32 грн
25+52.75 грн
100+43.75 грн
250+41.02 грн
500+39.37 грн
1000+37.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLE9351SJXTMA1 TLE9351SJXTMA1 Infineon Technologies Infineon-TLE9351SJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6dcf29b122d Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+41.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9351SJXTMA1 TLE9351SJXTMA1 Infineon Technologies Infineon-TLE9351SJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6dcf29b122d Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
4+84.36 грн
10+59.31 грн
25+53.64 грн
100+44.54 грн
250+41.76 грн
500+40.08 грн
1000+38.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAT5406WH6327XTSA1 BAT5406WH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+5.11 грн
6000+4.44 грн
9000+4.19 грн
15000+3.67 грн
21000+3.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT5406WH6327XTSA1 BAT5406WH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 29728 шт:
термін постачання 21-31 дні (днів)
13+24.67 грн
22+14.41 грн
100+9.00 грн
500+6.24 грн
1000+5.53 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IRS2334SPBF IRS2334SPBF Infineon Technologies irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRF6665TRPBF IRF6665TRPBF Infineon Technologies irf6665pbf.pdf?fileId=5546d462533600a4015355ec8dcb1a62 Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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IRG4BC30KDPBF IRG4BC30KDPBF Infineon Technologies IRG4BC30KDPbF.pdf description Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
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KITLGPWRBOM015TOBO1 KITLGPWRBOM015TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL BOARD FOR IPB068N20NM6
Packaging: Bulk
Function: MOSFET
Type: Power Management
Utilized IC / Part: IPB068N20NM6
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board Test Points
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+5194.25 грн
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CY8C4147AZE-S285 CY8C4147AZE-S285 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8&redirId=230517 Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+671.66 грн
10+502.49 грн
25+466.48 грн
160+390.94 грн
320+378.83 грн
480+372.76 грн
960+357.90 грн
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IGW100N60H3FKSA1 IGW100N60H3FKSA1 Infineon Technologies Infineon-IGW100N60H3-DS-v01_02-en.pdf?fileId=db3a30433a747525013a9270ef6b17cb Description: IGBT TRENCH FS 600V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/265ns
Switching Energy: 3.7mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 3.5Ohm, 15V
Gate Charge: 625 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 714 W
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
1+630.28 грн
30+356.12 грн
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S6E1A12C0AGV20000 S6E1A12C0AGV20000 Infineon Technologies download Description: IC MCU 32BIT 88KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 2314 шт:
термін постачання 21-31 дні (днів)
2+188.61 грн
10+136.18 грн
25+124.76 грн
80+106.93 грн
250+103.27 грн
Мінімальне замовлення: 2
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IRF1010ZSTRLPBF IRF1010ZSTRLPBF Infineon Technologies irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+70.65 грн
1600+63.15 грн
2400+61.97 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRF1010ZSTRLPBF IRF1010ZSTRLPBF Infineon Technologies irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 3116 шт:
термін постачання 21-31 дні (днів)
2+206.91 грн
10+128.97 грн
100+88.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRG4PC30SPBF IRG4PC30SPBF Infineon Technologies irg4pc30spbf.pdf?fileId=5546d462533600a401535643dbdd22c8 Description: IGBT 600V 34A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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E3203006443 Infineon Technologies Description: INFINEON
Packaging: Bulk
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IRF7488TRPBF IRF7488TRPBF Infineon Technologies irf7488pbf.pdf?fileId=5546d462533600a4015355ffa6da1c36 Description: MOSFET N-CH 80V 6.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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IRF7488TRPBF IRF7488TRPBF Infineon Technologies irf7488pbf.pdf?fileId=5546d462533600a4015355ffa6da1c36 Description: MOSFET N-CH 80V 6.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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CY22392FXI CY22392FXI Infineon Technologies download Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
на замовлення 397 шт:
термін постачання 21-31 дні (днів)
1+2037.27 грн
10+1580.64 грн
25+1485.37 грн
100+1295.69 грн
250+1248.84 грн
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CY22392ZXC-396T CY22392ZXC-396T Infineon Technologies download Description: IC CLOCK GENERATOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
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CY22392ZXC-396 CY22392ZXC-396 Infineon Technologies download Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
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CY22392ZXC-398T CY22392ZXC-398T Infineon Technologies download Description: IC CLOCK GEN PROG
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CY22392ZXC-398 CY22392ZXC-398 Infineon Technologies download Description: IC CLOCK GEN PROG
Packaging: Tube
DigiKey Programmable: Not Verified
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TT61N16KOFKHPSA1 TT61N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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CY8C4147LQS-S263T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S263T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 768 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+508.52 грн
10+377.96 грн
25+350.06 грн
100+299.70 грн
250+285.97 грн
500+277.68 грн
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IRS21844PBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRLU2905ZPBF description irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLU2905ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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AUIRLU2905 AUIRLR2905.pdf
AUIRLU2905
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB45N06S4L08ATMA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPB45N06S4L08ATMA3
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+50.80 грн
Мінімальне замовлення: 1000
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IPB45N06S4L08ATMA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPB45N06S4L08ATMA3
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 2986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.96 грн
10+98.47 грн
100+66.84 грн
500+50.00 грн
Мінімальне замовлення: 2
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IRFZ44NSPBF description irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f
IRFZ44NSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IRFZ44NLPBF irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f
IRFZ44NLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IQD005N04NM6CGATMA1 Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533
IQD005N04NM6CGATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6CGATMA1 Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533
IQD005N04NM6CGATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
на замовлення 4265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+238.74 грн
10+171.89 грн
25+157.50 грн
100+132.98 грн
250+125.91 грн
500+121.65 грн
1000+116.20 грн
2500+112.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQFH55N04NM6ATMA1 Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d
IQFH55N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+138.11 грн
Мінімальне замовлення: 3000
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XMC4402F64F256BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4402F64F256BAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+608.00 грн
10+456.89 грн
25+424.73 грн
160+378.71 грн
В кошику  од. на суму  грн.
T2510N06TOFVTXPSA1 Infineon-T2510N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc20123f1833e6d4128
T2510N06TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 600V 4900A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
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D5810N06TVFXPSA1 Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70
D5810N06TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 5800A
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27185.65 грн
В кошику  од. на суму  грн.
D5810N06TVFXPSA1 Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70
D5810N06TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 5800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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AUIPS6011STRL AUIPS6011%28S%2CR%29.pdf
AUIPS6011STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS6011S AUIPS6011%28S%2CR%29.pdf
AUIPS6011S
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
IMT65R039M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
IMT65R039M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+782.28 грн
10+519.96 грн
100+388.29 грн
500+341.30 грн
В кошику  од. на суму  грн.
F3L225R07W2H3PB63BPSA1 Infineon-F3L225R07W2H3P_B63-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f3405c1db5680
F3L225R07W2H3PB63BPSA1
Виробник: Infineon Technologies
Description: MODULE IGBT 700V EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 85A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3866.04 грн
18+3503.34 грн
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S25FL128SDPBHBC03 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPBHBC03
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BCR198B6327HTLA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
BCR198B6327HTLA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
IAUA180N10S5N029AUMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.57 грн
10+196.03 грн
100+138.19 грн
500+106.51 грн
1000+99.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRLU9343PBF irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702
IRLU9343PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
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CY8C28452-24PVXI download
CY8C28452-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY2305CSXC-1 Infineon-CY2305C_CY2309C_3.3_V_Zero_Delay_Clock_Buffer-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec649ec3c6d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2305CSXC-1
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2249 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
78+293.31 грн
Мінімальне замовлення: 78
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CY8CMBR2016-24LQXIT Infineon-CY8CMBR2016_CapSense_Express_16_Button_Matrix_Controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7ec1f3fd2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CMBR2016-24LQXIT
Виробник: Infineon Technologies
Description: IC MBR 10 BUTTON 10 LED 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.3mA
Number of Inputs: Up to 16
Supplier Device Package: 48-QFN (6x6)
Proximity Detection: No
LED Driver Channels: Up to 16
DigiKey Programmable: Not Verified
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IPP086N10N3GXKSA1 IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPP086N10N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
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CY22393FXC Infineon-CY22393_CY223931_CY22394_CY22395_THREE_PLL_SERIAL_PROGRAMMABLE_FLASH_PROGRAMMABLE_CLOCK_GENERATOR-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b89e3555&utm_source=cypress&utm_medium=referral&utm_campaign=20
CY22393FXC
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1576.50 грн
10+1222.15 грн
96+1081.02 грн
В кошику  од. на суму  грн.
S6J326CLSPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J326CLSPSC20000
Виробник: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2487.70 грн
10+1954.31 грн
40+1881.72 грн
В кошику  од. на суму  грн.
S6J328CLSPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
S6J328CLSPSC20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.0625MB 216TEQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2623.78 грн
10+2002.28 грн
40+1824.57 грн
В кошику  од. на суму  грн.
IRS2184STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+63.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2184STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 3020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.94 грн
10+88.74 грн
25+80.68 грн
100+67.46 грн
250+63.51 грн
500+61.14 грн
1000+58.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFZ44ESPBF description irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208
IRFZ44ESPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE9350VSJXTMA1 Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259
TLE9350VSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+40.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9350VSJXTMA1 Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259
TLE9350VSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.56 грн
10+58.32 грн
25+52.75 грн
100+43.75 грн
250+41.02 грн
500+39.37 грн
1000+37.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLE9351SJXTMA1 Infineon-TLE9351SJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6dcf29b122d
TLE9351SJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+41.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9351SJXTMA1 Infineon-TLE9351SJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6dcf29b122d
TLE9351SJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.36 грн
10+59.31 грн
25+53.64 грн
100+44.54 грн
250+41.76 грн
500+40.08 грн
1000+38.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAT5406WH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5406WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.11 грн
6000+4.44 грн
9000+4.19 грн
15000+3.67 грн
21000+3.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT5406WH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5406WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 29728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.67 грн
22+14.41 грн
100+9.00 грн
500+6.24 грн
1000+5.53 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IRS2334SPBF irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b
IRS2334SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товару немає в наявності
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IRF6665TRPBF irf6665pbf.pdf?fileId=5546d462533600a4015355ec8dcb1a62
IRF6665TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
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IRG4BC30KDPBF description IRG4BC30KDPbF.pdf
IRG4BC30KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
товару немає в наявності
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KITLGPWRBOM015TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM015TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IPB068N20NM6
Packaging: Bulk
Function: MOSFET
Type: Power Management
Utilized IC / Part: IPB068N20NM6
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board Test Points
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5194.25 грн
В кошику  од. на суму  грн.
CY8C4147AZE-S285 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8&redirId=230517
CY8C4147AZE-S285
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+671.66 грн
10+502.49 грн
25+466.48 грн
160+390.94 грн
320+378.83 грн
480+372.76 грн
960+357.90 грн
В кошику  од. на суму  грн.
IGW100N60H3FKSA1 Infineon-IGW100N60H3-DS-v01_02-en.pdf?fileId=db3a30433a747525013a9270ef6b17cb
IGW100N60H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/265ns
Switching Energy: 3.7mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 3.5Ohm, 15V
Gate Charge: 625 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 714 W
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+630.28 грн
30+356.12 грн
В кошику  од. на суму  грн.
S6E1A12C0AGV20000 download
S6E1A12C0AGV20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 2314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+188.61 грн
10+136.18 грн
25+124.76 грн
80+106.93 грн
250+103.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF1010ZSTRLPBF irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d
IRF1010ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+70.65 грн
1600+63.15 грн
2400+61.97 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRF1010ZSTRLPBF irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d
IRF1010ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 3116 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.91 грн
10+128.97 грн
100+88.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRG4PC30SPBF irg4pc30spbf.pdf?fileId=5546d462533600a401535643dbdd22c8
IRG4PC30SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 34A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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E3203006443
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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IRF7488TRPBF irf7488pbf.pdf?fileId=5546d462533600a4015355ffa6da1c36
IRF7488TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 6.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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IRF7488TRPBF irf7488pbf.pdf?fileId=5546d462533600a4015355ffa6da1c36
IRF7488TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 6.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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CY22392FXI download
CY22392FXI
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
на замовлення 397 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2037.27 грн
10+1580.64 грн
25+1485.37 грн
100+1295.69 грн
250+1248.84 грн
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CY22392ZXC-396T download
CY22392ZXC-396T
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
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CY22392ZXC-396 download
CY22392ZXC-396
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
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CY22392ZXC-398T download
CY22392ZXC-398T
Виробник: Infineon Technologies
Description: IC CLOCK GEN PROG
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CY22392ZXC-398 download
CY22392ZXC-398
Виробник: Infineon Technologies
Description: IC CLOCK GEN PROG
Packaging: Tube
DigiKey Programmable: Not Verified
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