Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117874) > Сторінка 667 з 1965
| Фото | Назва | Виробник | Інформація |
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| 4DIR1420HXUMA1 | Infineon Technologies |
Description: DIGITAL ISOLATORSPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Data Rate: 40Mbps Technology: Capacitive Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: PG-DSO-16 Propagation Delay tpLH / tpHL (Max): 26ns, 26ns Isolated Power: No Channel Type: Bidirectional Pulse Width Distortion (Max): 15ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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4DIR2400HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 2/2 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 26ns, 26ns Isolated Power: No Channel Type: Bidirectional Pulse Width Distortion (Max): 3ns Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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4DIR2400HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 2/2 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 26ns, 26ns Isolated Power: No Channel Type: Bidirectional Pulse Width Distortion (Max): 3ns Number of Channels: 4 |
на замовлення 1349 шт: термін постачання 21-31 дні (днів) |
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| 4DIR1421HXUMA1 | Infineon Technologies |
Description: DIGITAL ISOLATORSPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Data Rate: 40Mbps Technology: Capacitive Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: PG-DSO-16 Propagation Delay tpLH / tpHL (Max): 26ns, 26ns Isolated Power: No Channel Type: Bidirectional Pulse Width Distortion (Max): 15ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| 4DIR1421HXUMA1 | Infineon Technologies |
Description: DIGITAL ISOLATORSPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Data Rate: 40Mbps Technology: Capacitive Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: PG-DSO-16 Propagation Delay tpLH / tpHL (Max): 26ns, 26ns Isolated Power: No Channel Type: Bidirectional Pulse Width Distortion (Max): 15ns Number of Channels: 4 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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4DIR1400HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 26ns, 26ns Isolated Power: No Channel Type: Bidirectional Pulse Width Distortion (Max): 3ns Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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4DIR1400HXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Magnetic Coupling Voltage - Isolation: 5700Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: PG-DSO-16-46 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 26ns, 26ns Isolated Power: No Channel Type: Bidirectional Pulse Width Distortion (Max): 3ns Number of Channels: 4 |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
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KITXMC47RELAXV1TOBO1 | Infineon Technologies |
Description: RELAX KIT XMC4700 EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Utilized IC / Part: XMC4700 Platform: Relax Kit |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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ISK024NE2LM5AUSA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc) Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Drain to Source Voltage (Vdss): 40 V |
на замовлення 1118 шт: термін постачання 21-31 дні (днів) |
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ISK057N04LM6ATLA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 64A 6VSONPackaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: USB Switch Operating Temperature: -55°C ~ 155°C (TJ) Rds On (Typ): 5.9mOhm (Max) Input Type: Non-Inverting Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V Voltage - Load: 40V Voltage - Supply (Vcc/Vdd): Not Required Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Ratio - Input:Output: 1:1 Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISK057N04LM6ATLA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 64A 6VSONPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: USB Switch Operating Temperature: -55°C ~ 155°C (TJ) Rds On (Typ): 5.9mOhm (Max) Input Type: Non-Inverting Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V Voltage - Load: 40V Voltage - Supply (Vcc/Vdd): Not Required Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Ratio - Input:Output: 1:1 Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISK036N03LM5AUSA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISK036N03LM5AUSA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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EVALBDPSDRIVERTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 2EDF7175FPackaging: Bulk Function: MOSFET Type: Power Management Contents: Board(s) Utilized IC / Part: 2EDF7175F Supplied Contents: Board(s) Primary Attributes: 36V ~ 75V Operating Voltage Embedded: Yes, MCU |
товару немає в наявності |
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CY7C1018DV33-10VXIT | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJPackaging: Tape & Reel (TR) Package / Case: 32-BSOJ (0.300", 7.62mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C1018DV33-10VXIT | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJPackaging: Cut Tape (CT) Package / Case: 32-BSOJ (0.300", 7.62mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 1023 шт: термін постачання 21-31 дні (днів) |
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IDH05G120C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 1200V 5A PGTO2201Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 301pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 33 µA @ 1200 V |
на замовлення 942 шт: термін постачання 21-31 дні (днів) |
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TT285N16KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.6KV 520A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 285 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 520 A Voltage - Off State: 1.6 kV |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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TT280N18SOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 520A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 280 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 520 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CG8425AA | Infineon Technologies |
Description: ASYNC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CG7781AA | Infineon Technologies |
Description: ASYNC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY8C4124PVA-442Z | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Grade: Automotive Number of I/O: 24 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4124PVA-442ZT | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28SSOPPackaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4124LQS-S433 | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 34 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4124LQS-S433T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 34 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 7GA6Y0205 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 792826-00 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CG8202AA | Infineon Technologies |
Description: IC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CG8874AM | Infineon Technologies |
Description: IC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD157B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 3.6V SGWLL22Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.17pF @ 10GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.6V (Typ) Power - Peak Pulse: 7.2W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD157B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 3.6V SGWLL22Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.17pF @ 10GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.6V (Typ) Power - Peak Pulse: 7.2W Power Line Protection: No |
на замовлення 6591 шт: термін постачання 21-31 дні (днів) |
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ESD156B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.6VWM 3.5V SGWLL23Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.19pF @ 10GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SG-WLL-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.5V (Typ) Power - Peak Pulse: 7W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD156B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.6VWM 3.5V SGWLL23Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.19pF @ 10GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SG-WLL-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.5V (Typ) Power - Peak Pulse: 7W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD151B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 3.5V SGWLL23Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.08pF @ 10GHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SG-WLL-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.5V (Typ) Power - Peak Pulse: 3.5W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD151B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 3.5V SGWLL23Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.08pF @ 10GHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SG-WLL-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.5V (Typ) Power - Peak Pulse: 3.5W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD155B2W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 3.5V SGWLL31Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.18pF @ 10GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SG-WLL-3-1 Bidirectional Channels: 2 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.5V (Typ) Power - Peak Pulse: 7W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD155B2W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 3.5V SGWLL31Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.18pF @ 10GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SG-WLL-3-1 Bidirectional Channels: 2 Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: 3.5V (Typ) Power - Peak Pulse: 7W Power Line Protection: No |
на замовлення 10275 шт: термін постачання 21-31 дні (днів) |
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CY7C1020D-10ZSXI | Infineon Technologies |
Description: IC SRAM 512KBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 32K x 16 DigiKey Programmable: Not Verified |
на замовлення 515 шт: термін постачання 21-31 дні (днів) |
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AUIRLS3034-7TRL | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK (7-Lead) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPZA65R018CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-TO247-4-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPDQ65R017CFD7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 791 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R029CFD7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPDQ65R029CFD7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7CGATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7CGATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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| IQE004NE1LM7ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-TSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| IQE004NE1LM7ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-TSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7CGSCATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHTFN-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE004NE1LM7CGSCATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHTFN-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 5900 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7SCATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7SCATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 9031 шт: термін постачання 21-31 дні (днів) |
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IGC54T65R3QEX1SA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 100A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A Supplier Device Package: Die IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S29GL512S11TFI010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Verified |
на замовлення 517 шт: термін постачання 21-31 дні (днів) |
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S29GL128P90FFIR20 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 8 DigiKey Programmable: Verified |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
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ISC035N10NM5LFATMA1 | Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC035N10NM5LFATMA1 | Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFICC80QSG84W3BPATOBO1 | Infineon Technologies |
Description: REF FOR POWER TOOL BATTERY CHARGPackaging: Bulk Function: Battery Charger Type: Power Management Utilized IC / Part: ICC80QSG, IPN70R450P7S Supplied Contents: Board(s) Primary Attributes: 110 ~ 230 VAC Input Voltage Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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2EDN8523RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C652148-24LTXIT | Infineon Technologies |
Description: USB Full-Speed PeripheralsPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Bridge Interface: GPIO, SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) DigiKey Programmable: Not Verified |
на замовлення 2217 шт: термін постачання 21-31 дні (днів) |
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CY7C65223-24LTXIT | Infineon Technologies |
Description: USB Full-Speed PeripheralsPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Bridge Interface: GPIO, UART Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) DigiKey Programmable: Not Verified |
на замовлення 3781 шт: термін постачання 21-31 дні (днів) |
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| 4DIR1420HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.67 грн |
| 10+ | 188.83 грн |
| 100+ | 154.66 грн |
| 500+ | 122.36 грн |
| 4DIR2400HXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| 4DIR2400HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
на замовлення 1349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 164.72 грн |
| 10+ | 114.51 грн |
| 100+ | 88.03 грн |
| 500+ | 71.67 грн |
| 4DIR1421HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 119.63 грн |
| 4DIR1421HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 15ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 267.48 грн |
| 10+ | 181.89 грн |
| 100+ | 148.98 грн |
| 500+ | 117.86 грн |
| 4DIR1400HXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
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| 4DIR1400HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Isolated Power: No
Channel Type: Bidirectional
Pulse Width Distortion (Max): 3ns
Number of Channels: 4
на замовлення 237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 159.23 грн |
| 10+ | 110.51 грн |
| 100+ | 84.95 грн |
| KITXMC47RELAXV1TOBO1 |
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Виробник: Infineon Technologies
Description: RELAX KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4700
Platform: Relax Kit
Description: RELAX KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4700
Platform: Relax Kit
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2701.44 грн |
| ISK024NE2LM5AUSA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
на замовлення 1118 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 82.36 грн |
| 10+ | 49.55 грн |
| 100+ | 32.63 грн |
| 500+ | 23.82 грн |
| 1000+ | 21.63 грн |
| ISK057N04LM6ATLA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
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| ISK057N04LM6ATLA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
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| ISK036N03LM5AUSA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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од. на суму грн.
| ISK036N03LM5AUSA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.05 грн |
| 10+ | 59.67 грн |
| 100+ | 39.53 грн |
| 500+ | 29.00 грн |
| 1000+ | 26.39 грн |
| EVALBDPSDRIVERTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EDF7175F
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDF7175F
Supplied Contents: Board(s)
Primary Attributes: 36V ~ 75V Operating Voltage
Embedded: Yes, MCU
Description: EVAL BOARD FOR 2EDF7175F
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDF7175F
Supplied Contents: Board(s)
Primary Attributes: 36V ~ 75V Operating Voltage
Embedded: Yes, MCU
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| CY7C1018DV33-10VXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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| CY7C1018DV33-10VXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1023 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 234.53 грн |
| 10+ | 202.58 грн |
| 25+ | 199.41 грн |
| 50+ | 186.63 грн |
| 100+ | 166.77 грн |
| 250+ | 161.29 грн |
| 500+ | 158.07 грн |
| IDH05G120C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 1200V 5A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Description: DIODE SIL CARB 1200V 5A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
на замовлення 942 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 259.63 грн |
| 50+ | 126.79 грн |
| 100+ | 114.85 грн |
| 500+ | 88.17 грн |
| TT285N16KOFHPSA2 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 285 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 285 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 12253.74 грн |
| TT280N18SOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.8 kV
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| CY8C4124PVA-442Z |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| CY8C4124PVA-442ZT |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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| CY8C4124LQS-S433 |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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| CY8C4124LQS-S433T |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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| ESD157B1W01005E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
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| ESD157B1W01005E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
на замовлення 6591 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.20 грн |
| 53+ | 5.74 грн |
| 100+ | 3.13 грн |
| 500+ | 2.41 грн |
| 1000+ | 1.74 грн |
| 2000+ | 1.71 грн |
| 5000+ | 1.35 грн |
| ESD156B1W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
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| ESD156B1W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
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| ESD151B1W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 2.39 грн |
| ESD151B1W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.69 грн |
| 34+ | 8.99 грн |
| 100+ | 5.57 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.36 грн |
| 2000+ | 2.97 грн |
| 5000+ | 2.51 грн |
| ESD155B2W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
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| ESD155B2W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
на замовлення 10275 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.90 грн |
| 36+ | 8.54 грн |
| 100+ | 5.28 грн |
| 500+ | 3.62 грн |
| 1000+ | 2.87 грн |
| 2000+ | 2.72 грн |
| 5000+ | 2.35 грн |
| CY7C1020D-10ZSXI |
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Виробник: Infineon Technologies
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
на замовлення 515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 443.18 грн |
| 10+ | 389.75 грн |
| 25+ | 382.38 грн |
| 40+ | 356.24 грн |
| 135+ | 319.65 грн |
| 270+ | 318.45 грн |
| AUIRLS3034-7TRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| IPZA65R018CFD7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPDQ65R017CFD7AXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
на замовлення 791 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1092.65 грн |
| 10+ | 834.27 грн |
| 25+ | 779.84 грн |
| 100+ | 675.74 грн |
| 250+ | 648.99 грн |
| IPDQ65R029CFD7AXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| IPDQ65R029CFD7AXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
на замовлення 728 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 722.42 грн |
| 10+ | 543.69 грн |
| 25+ | 505.77 грн |
| 100+ | 435.60 грн |
| 250+ | 416.97 грн |
| IQE004NE1LM7CGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 78.70 грн |
| IQE004NE1LM7CGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.19 грн |
| 10+ | 145.10 грн |
| 100+ | 115.46 грн |
| 500+ | 91.68 грн |
| 1000+ | 77.79 грн |
| 2000+ | 73.90 грн |
| IQE004NE1LM7ATMA1 |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 80.67 грн |
| IQE004NE1LM7ATMA1 |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 185.90 грн |
| 10+ | 148.73 грн |
| 100+ | 118.35 грн |
| 500+ | 93.98 грн |
| 1000+ | 79.74 грн |
| 2000+ | 75.75 грн |
| IQE004NE1LM7CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
товару немає в наявності
В кошику
од. на суму грн.
| IQE004NE1LM7CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.00 грн |
| 10+ | 131.73 грн |
| 100+ | 90.90 грн |
| 500+ | 68.92 грн |
| 1000+ | 66.04 грн |
| IQE004NE1LM7SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 59.62 грн |
| IQE004NE1LM7SCATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 9031 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.00 грн |
| 10+ | 131.66 грн |
| 100+ | 90.81 грн |
| 500+ | 68.85 грн |
| 1000+ | 65.95 грн |
| IGC54T65R3QEX1SA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
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| S29GL512S11TFI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
на замовлення 517 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 717.72 грн |
| 10+ | 639.85 грн |
| 25+ | 625.36 грн |
| 40+ | 583.73 грн |
| 91+ | 513.86 грн |
| 273+ | 488.36 грн |
| 455+ | 475.54 грн |
| S29GL128P90FFIR20 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 463.57 грн |
| 10+ | 415.44 грн |
| 25+ | 402.84 грн |
| 50+ | 369.14 грн |
| 180+ | 352.74 грн |
| 360+ | 343.98 грн |
| 540+ | 333.36 грн |
| ISC035N10NM5LFATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
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од. на суму грн.
| ISC035N10NM5LFATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Description: OPTIMOSTM5LINEARFET100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
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| REFICC80QSG84W3BPATOBO1 |
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Виробник: Infineon Technologies
Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7795.26 грн |
| 2EDN8523RXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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од. на суму грн.
| CY7C652148-24LTXIT |
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Виробник: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
на замовлення 2217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.86 грн |
| 10+ | 150.16 грн |
| 25+ | 137.62 грн |
| 100+ | 116.17 грн |
| 250+ | 109.97 грн |
| 500+ | 106.24 грн |
| 1000+ | 101.47 грн |
| CY7C65223-24LTXIT |
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Виробник: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
на замовлення 3781 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.08 грн |
| 10+ | 149.63 грн |
| 25+ | 137.14 грн |
| 100+ | 115.75 грн |
| 250+ | 109.57 грн |
| 500+ | 105.86 грн |
| 1000+ | 101.11 грн |




























