Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (121538) > Сторінка 684 з 2026
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BTG70501EPLDAUGHBRDTOBO1 | Infineon Technologies |
Description: BTG7050-1EPL DAUGH BRDPackaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTG7050-1EPL |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FF450R17ME3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 605A 2250WNTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A Operating Temperature: -40°C ~ 125°C Configuration: Half Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 2250 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 605 A IGBT Type: Trench Field Stop Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FZ1500R33HE3S6BOSA1 | Infineon Technologies |
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19 Current - Collector Cutoff (Max): 5 mA Power - Max: 2400000 W Voltage - Collector Emitter Breakdown (Max): 3300 V Current - Collector (Ic) (Max): 1500 A IGBT Type: Trench Field Stop Supplier Device Package: AG-IHVB190 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 280 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
ISP25DP06NMXTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 1.9A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ISP25DP06NMXTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 1.9A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
на замовлення 3703 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BAT6307WH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 3V 100MW SOT343Packaging: Bulk Package / Case: SC-82A, SOT-343 Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz Voltage - Peak Reverse (Max): 3V Supplier Device Package: PG-SOT343-3D Current - Max: 100 mA Power Dissipation (Max): 100 mW |
на замовлення 88581 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPA60R145CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEWCurrent - Continuous Drain (Id) @ 25°C: 9A (Tc) Packaging: Bulk |
на замовлення 928 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRFP4310ZPBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Supplier Device Package: PG-TO247-3-901 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
2EDL8033G4BXTMA1 | Infineon Technologies |
Description: INT. POWERSTAGE/DRIVERVoltage - Output Supply: 8V ~ 17V Number of Channels: 2 Propagation Delay tpLH / tpHL (Max): 35ns, 35ns Rise / Fall Time (Typ): 195ns, 106ns Supplier Device Package: PG-VDSON-8-5 Current - Output High, Low: 3A, 6A Technology: Magnetic Coupling Current - Peak Output: 3A, 6A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
2EDL8033G4BXTMA1 | Infineon Technologies |
Description: INT. POWERSTAGE/DRIVERVoltage - Output Supply: 8V ~ 17V Number of Channels: 2 Propagation Delay tpLH / tpHL (Max): 35ns, 35ns Rise / Fall Time (Typ): 195ns, 106ns Supplier Device Package: PG-VDSON-8-5 Current - Output High, Low: 3A, 6A Technology: Magnetic Coupling Current - Peak Output: 3A, 6A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4917 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| CG10218AA | Infineon Technologies |
Description: IC FRAM Packaging: Tube Memory Format: FRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CG10218AAT | Infineon Technologies |
Description: IC FRAM Packaging: Tape & Reel (TR) Memory Format: FRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BCP5116H6327XTSA1 | Infineon Technologies |
Description: TRANS PNP 45V 1A PG-SOT223-4-24Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT223-4-24 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 2 W |
на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BC848CE6433HTMA1 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A PG-SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AUIRF3805 | Infineon Technologies |
Description: MOSFET N-CH 55V 160A TO220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3085 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SPA21N50C3XKSA1 | Infineon Technologies |
Description: HIGH POWER_LEGACYPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 34.5W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO220-3-31 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SP4001101XTMA1 | Infineon Technologies |
Description: IC TPMS & INERTIA 24DSOSPPackaging: Tape & Reel (TR) Applications: Board Mount |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SP4001101XTMA1 | Infineon Technologies |
Description: IC TPMS & INERTIA 24DSOSPPackaging: Cut Tape (CT) Applications: Board Mount |
на замовлення 2441 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MB9BFD18TPMC-GK7E1 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 176LQFPDigiKey Programmable: Not Verified Number of I/O: 154 Supplier Device Package: 176-LQFP (24x24) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 128K x 8 Program Memory Size: 1MB (1M x 8) Speed: 144MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tray Data Converters: A/D 32x12b |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TLE9180D32QKXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 6V ~ 60V Supplier Device Package: PG-LQFP-64-27 Rise / Fall Time (Typ): 35ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 2A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TLE9180D32QKXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 6V ~ 60V Supplier Device Package: PG-LQFP-64-27 Rise / Fall Time (Typ): 35ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 2A DigiKey Programmable: Not Verified |
на замовлення 1835 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY9AFB44NBBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 112BGADigiKey Programmable: Not Verified Number of I/O: 83 Supplier Device Package: 112-PFBGA (10x10) Peripherals: DMA, LCD, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 24x12b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 112-LFBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
S29GL01GS10FHSS23 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 16 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
S29GL01GS10FHSS33 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 16 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
S29GL01GS10FHSS30 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CYAT81688-100AS61T | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHQualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CYAT81688-100AS61T | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHQualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Cut Tape (CT) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CYAT81688-100AS61ZT | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHQualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CYAT81688-100AS61ZT | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHQualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Cut Tape (CT) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| CYAT81688-100AA71 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHPackaging: Tray Qualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 100-LQFP |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
CYAT81688-100AS61 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHMounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray Qualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C, SPI |
на замовлення 897 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CYAT81688-100AS61KH | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHQualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY8C4127AXI-S453 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 44TQFPDigiKey Programmable: Not Verified Number of I/O: 37 Supplier Device Package: 44-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 44-LQFP Packaging: Tray |
на замовлення 1180 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY8C4148AZI-S453 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 48TQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 38 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY8C4147AZI-S453 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 48TQFPDigiKey Programmable: Not Verified Number of I/O: 38 Supplier Device Package: 48-TQFP (7x7) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray |
на замовлення 347 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PXB4221EV3.4 | Infineon Technologies |
Description: ATM UNI SINGLE 2.048MBPS 3.3V 25 Packaging: Bulk |
на замовлення 764 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PXB4220EV3.4 | Infineon Technologies |
Description: INTERWORKING ELEMENT FOR 8 E1/T1 Packaging: Bulk |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| PXB4221EV3.2 | Infineon Technologies |
Description: IWE8 INTERWORKING ELEMENT Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 4160 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
IRFB4620PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PG-TO220-3-904 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRFB5620PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PG-TO220-3-904 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CY9AF342LBPMC1-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 64LQFPDigiKey Programmable: Not Verified Number of I/O: 51 Supplier Device Package: 64-LQFP (10x10) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Core Size: 32-Bit Single-Core Data Converters: A/D 12x12b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 160KB (160K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
ICL8201XTSA1 | Infineon Technologies |
Description: IC LED DRVR OFFL TRIAC SOT23-6Voltage - Supply (Max): 18V Voltage - Supply (Min): 6V Dimming: Triac Supplier Device Package: PG-SOT23-6 Topology: Step-Down (Buck) Internal Switch(s): Yes Current - Output / Channel: 400mA Applications: Lighting Operating Temperature: -25°C ~ 150°C (TJ) Type: AC DC Offline Switcher Frequency: 40kHz ~ 150kHz Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 27V Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BC858BE6433HTMA1 | Infineon Technologies |
Description: TRANS PNP 30V 0.1A PG-SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BGA5M1BN6E6327XTSA1 | Infineon Technologies |
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6Packaging: Bulk Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.805GHz ~ 2.2GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.6V Gain: 19.3dB Current - Supply: 9.5mA Noise Figure: 0.65dB P1dB: -17dBm Test Frequency: 2GHz Supplier Device Package: PG-TSNP-6-10 |
на замовлення 38129 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLE42794GMXUMA2 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA PG-DSO-14Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 280 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14 Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 8 mA Qualification: AEC-Q100 |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BSO211PHXUMA1 | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4A 8DSOPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-DSO-8 |
на замовлення 27500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BSO203PHXUMA1 | Infineon Technologies |
Description: MOSFET 2P-CH 20V 7A 8DSOPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FS75R12KE3B9BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 105A 355W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 355 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPSA70R600CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 10.5A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V |
на замовлення 2967 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPAW70R600CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 10.5A TO220-31Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO220-3-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V |
на замовлення 10825 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPSA70R600P7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 8.5A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V Power Dissipation (Max): 43.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V |
на замовлення 3550 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FS50R12KE3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 75A 270W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 270 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRF8721TRPBFXTMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRF8721TRPBFXTMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| TLE49462KHTMA1 | Infineon Technologies |
Description: MAG SWITCH IC HALL EFF SC59-3 Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
AUIPS6031S | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAKFeatures: Auto Restart Packaging: Tube Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 46mOhm Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.1A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPS60R1K5CEAKMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPS60R400CEAKMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 112W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY62146G30-45ZSXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP IIPackaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRL40T209ATMA2 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BTG70501EPLDAUGHBRDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3447.22 грн |
| FF450R17ME3BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 605 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
Description: IGBT MOD 1700V 605A 2250W
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 605 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
| FZ1500R33HE3S6BOSA1 |
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1500 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1500 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| ISP25DP06NMXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 22.69 грн |
| 2000+ | 19.93 грн |
| 3000+ | 18.94 грн |
| ISP25DP06NMXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
на замовлення 3703 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.17 грн |
| 10+ | 47.70 грн |
| 100+ | 31.24 грн |
| 500+ | 22.65 грн |
| BAT6307WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
на замовлення 88581 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2358+ | 8.77 грн |
| IPA60R145CFD7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Packaging: Bulk
Description: HIGH POWER_NEW
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Packaging: Bulk
на замовлення 928 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 190+ | 114.23 грн |
| IRFP4310ZPBFXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EDL8033G4BXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Voltage - Output Supply: 8V ~ 17V
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Rise / Fall Time (Typ): 195ns, 106ns
Supplier Device Package: PG-VDSON-8-5
Current - Output High, Low: 3A, 6A
Technology: Magnetic Coupling
Current - Peak Output: 3A, 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: INT. POWERSTAGE/DRIVER
Voltage - Output Supply: 8V ~ 17V
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Rise / Fall Time (Typ): 195ns, 106ns
Supplier Device Package: PG-VDSON-8-5
Current - Output High, Low: 3A, 6A
Technology: Magnetic Coupling
Current - Peak Output: 3A, 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| 2EDL8033G4BXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Voltage - Output Supply: 8V ~ 17V
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Rise / Fall Time (Typ): 195ns, 106ns
Supplier Device Package: PG-VDSON-8-5
Current - Output High, Low: 3A, 6A
Technology: Magnetic Coupling
Current - Peak Output: 3A, 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: INT. POWERSTAGE/DRIVER
Voltage - Output Supply: 8V ~ 17V
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Rise / Fall Time (Typ): 195ns, 106ns
Supplier Device Package: PG-VDSON-8-5
Current - Output High, Low: 3A, 6A
Technology: Magnetic Coupling
Current - Peak Output: 3A, 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4917 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.38 грн |
| 10+ | 75.48 грн |
| 25+ | 68.44 грн |
| 100+ | 57.00 грн |
| 250+ | 53.54 грн |
| 500+ | 51.46 грн |
| 1000+ | 48.93 грн |
| 2500+ | 47.15 грн |
| BCP5116H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1457+ | 14.09 грн |
| BC848CE6433HTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5369+ | 4.00 грн |
| AUIRF3805 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3085 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 139+ | 143.89 грн |
| SPA21N50C3XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 103+ | 196.65 грн |
| SP4001101XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 341.99 грн |
| SP4001101XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
на замовлення 2441 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 585.51 грн |
| 10+ | 436.79 грн |
| 25+ | 404.99 грн |
| 100+ | 347.33 грн |
| 250+ | 331.71 грн |
| 500+ | 322.29 грн |
| MB9BFD18TPMC-GK7E1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 154
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Data Converters: A/D 32x12b
Description: IC MCU 32BIT 1MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 154
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Data Converters: A/D 32x12b
товару немає в наявності
В кошику
од. на суму грн.
| TLE9180D32QKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TLE9180D32QKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
на замовлення 1835 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 449.91 грн |
| 10+ | 332.78 грн |
| 25+ | 307.80 грн |
| 100+ | 263.09 грн |
| 250+ | 254.45 грн |
| CY9AFB44NBBGL-GK9E1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 112BGA
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 112-PFBGA (10x10)
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Packaging: Tray
Description: IC MCU 32BIT 288KB FLASH 112BGA
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 112-PFBGA (10x10)
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| S29GL01GS10FHSS23 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| S29GL01GS10FHSS33 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| S29GL01GS10FHSS30 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CYAT81688-100AS61T |
![]() |
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 886.75 грн |
| CYAT81688-100AS61T |
![]() |
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1642.88 грн |
| 10+ | 1226.07 грн |
| 25+ | 1137.01 грн |
| 100+ | 975.20 грн |
| 250+ | 931.40 грн |
| 500+ | 905.00 грн |
| CYAT81688-100AS61ZT |
![]() |
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 965.34 грн |
| CYAT81688-100AS61ZT |
![]() |
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1642.88 грн |
| 10+ | 1226.07 грн |
| 25+ | 1137.01 грн |
| 100+ | 975.20 грн |
| 250+ | 931.40 грн |
| 500+ | 905.00 грн |
| CYAT81688-100AA71 |
![]() |
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
на замовлення 900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1466.52 грн |
| 10+ | 1302.31 грн |
| 25+ | 1243.73 грн |
| 90+ | 1043.61 грн |
| 270+ | 995.55 грн |
| 450+ | 947.49 грн |
| CYAT81688-100AS61 |
![]() |
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Description: PSOC BASED - TRUETOUCH
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
на замовлення 897 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1314.46 грн |
| 10+ | 980.77 грн |
| 25+ | 909.61 грн |
| 90+ | 801.36 грн |
| CYAT81688-100AS61KH |
![]() |
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1017.39 грн |
| 10+ | 778.86 грн |
| 90+ | 677.01 грн |
| 180+ | 630.91 грн |
| CY8C4127AXI-S453 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 44TQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 44-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Packaging: Tray
Description: IC MCU 32BIT 128KB FLASH 44TQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 44-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Packaging: Tray
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 400.53 грн |
| 10+ | 346.60 грн |
| 25+ | 327.67 грн |
| 160+ | 266.49 грн |
| 320+ | 252.83 грн |
| 480+ | 226.86 грн |
| 960+ | 188.19 грн |
| CY8C4148AZI-S453 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 420.91 грн |
| 10+ | 311.42 грн |
| 25+ | 287.84 грн |
| 100+ | 245.85 грн |
| 250+ | 234.27 грн |
| 500+ | 227.29 грн |
| 1000+ | 217.91 грн |
| 2500+ | 211.95 грн |
| CY8C4147AZI-S453 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Description: IC MCU 32BIT 128KB FLASH 48TQFP
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
на замовлення 347 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 395.04 грн |
| 10+ | 290.29 грн |
| 25+ | 267.80 грн |
| 80+ | 231.26 грн |
| 230+ | 217.94 грн |
| PXB4221EV3.4 |
на замовлення 764 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 6200.56 грн |
| PXB4220EV3.4 |
на замовлення 131 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 6200.56 грн |
| PXB4221EV3.2 |
Виробник: Infineon Technologies
Description: IWE8 INTERWORKING ELEMENT
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IWE8 INTERWORKING ELEMENT
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 4160 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 7122.52 грн |
| IRFB4620PBFXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFB5620PBFXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| CY9AF342LBPMC1-G-JNE2 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 160KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| ICL8201XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC LED DRVR OFFL TRIAC SOT23-6
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 6V
Dimming: Triac
Supplier Device Package: PG-SOT23-6
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 400mA
Applications: Lighting
Operating Temperature: -25°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Frequency: 40kHz ~ 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 27V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: IC LED DRVR OFFL TRIAC SOT23-6
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 6V
Dimming: Triac
Supplier Device Package: PG-SOT23-6
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 400mA
Applications: Lighting
Operating Temperature: -25°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Frequency: 40kHz ~ 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 27V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BC858BE6433HTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4743+ | 4.00 грн |
| BGA5M1BN6E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
на замовлення 38129 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 740+ | 27.31 грн |
| TLE42794GMXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 235+ | 84.02 грн |
| BSO211PHXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 616+ | 32.42 грн |
| BSO203PHXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 371+ | 55.82 грн |
| FS75R12KE3B9BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 8544.76 грн |
| IPSA70R600CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
на замовлення 2967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 498+ | 40.62 грн |
| IPAW70R600CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
на замовлення 10825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 302+ | 67.02 грн |
| IPSA70R600P7SAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
на замовлення 3550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 608+ | 33.17 грн |
| FS50R12KE3BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A 270W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Description: IGBT MOD 1200V 75A 270W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 5413.22 грн |
| IRF8721TRPBFXTMA1 |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 19.48 грн |
| IRF8721TRPBFXTMA1 |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.95 грн |
| 10+ | 48.38 грн |
| 100+ | 31.79 грн |
| 500+ | 23.12 грн |
| 1000+ | 20.95 грн |
| 2000+ | 19.13 грн |
| TLE49462KHTMA1 |
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SC59-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH IC HALL EFF SC59-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| AUIPS6031S |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Features: Auto Restart
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.1A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Features: Auto Restart
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.1A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| IPS60R1K5CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPS60R400CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 405+ | 49.09 грн |
| CY62146G30-45ZSXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRL40T209ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.



































