Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149929) > Сторінка 679 з 2499
Фото | Назва | Виробник | Інформація |
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IQE004NE1LM7ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-TSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-TSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7CGSCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHTFN-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE004NE1LM7CGSCATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHTFN-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 7847 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7SCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7SCATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 432µA Supplier Device Package: PG-WHSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V |
на замовлення 10543 шт: термін постачання 21-31 дні (днів) |
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IGC54T65R3QEX1SA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A Supplier Device Package: Die IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S29GL512S11TFI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Verified |
на замовлення 517 шт: термін постачання 21-31 дні (днів) |
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S29GL128P90FFIR20 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 8 DigiKey Programmable: Verified |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
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ISC035N10NM5LFATMA1 | Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC035N10NM5LFATMA1 | Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 115µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFICC80QSG84W3BPATOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Battery Charger Type: Power Management Utilized IC / Part: ICC80QSG, IPN70R450P7S Supplied Contents: Board(s) Primary Attributes: 110 ~ 230 VAC Input Voltage Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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2EDN8523RXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C652148-24LTXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Bridge Interface: GPIO, SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) DigiKey Programmable: Not Verified |
на замовлення 2219 шт: термін постачання 21-31 дні (днів) |
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CY7C65223-24LTXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Bridge Interface: GPIO, UART Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) DigiKey Programmable: Not Verified |
на замовлення 1393 шт: термін постачання 21-31 дні (днів) |
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CYT2B95BACQ0AZSGST | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 78 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CYT2B95BACQ0AZSGST | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 78 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CYT2B94CACQ0AZSGST | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 52x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CYT2B94CACQ0AZSGST | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 52x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CYT2B95CACQ0AZSGST | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 78 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYT2B95CACQ0AZSGST | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 78 DigiKey Programmable: Not Verified |
на замовлення 388 шт: термін постачання 21-31 дні (днів) |
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CYT2BL3CAAQ0AZSGST | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 4.063MB (4.063M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 45x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 49 DigiKey Programmable: Not Verified |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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CYT2B95BACQ0AZSGS | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 78 DigiKey Programmable: Not Verified |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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CYT2B94CACQ0AZSGS | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 52x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 1190 шт: термін постачання 21-31 дні (днів) |
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CYT2B95CACQ0AZSGS | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 78 DigiKey Programmable: Not Verified |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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CYAT817AZS61-3A002 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 810 шт: термін постачання 21-31 дні (днів) |
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FZ1500R33HE3C1BPSA1 | Infineon Technologies |
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA NTC Thermistor: No Supplier Device Package: AG-IHVB190 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 2400000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 280 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF7811AVTRPBF | Infineon Technologies |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF7811AVTRPBF | Infineon Technologies |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PASCO2V11BUMA1 | Infineon Technologies |
Description: SENSOR ENVIRONMENTAL Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AIMBG75R140M1HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AIMBG75R140M1HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AIMDQ75R140M1HXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AIMDQ75R140M1HXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) |
на замовлення 724 шт: термін постачання 21-31 дні (днів) |
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AIMZA75R140M1HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tj) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Supplier Device Package: PG-TO247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
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S99-50593 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD111B1W0201E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.12pF @ 2.5GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power - Peak Pulse: 22W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD111B1W0201E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.12pF @ 2.5GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power - Peak Pulse: 22W Power Line Protection: No |
на замовлення 14900 шт: термін постачання 21-31 дні (днів) |
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ESD113B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 36W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PVT322APBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) x 2 Termination Style: PC Pin Load Current: 170 mA Supplier Device Package: 8-DIP Voltage - Load: 0 V ~ 250 V On-State Resistance (Max): 8 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: UL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQDH45N04LM6ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-TSON-8-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQDH45N04LM6ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-TSON-8-9 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
на замовлення 4610 шт: термін постачання 21-31 дні (днів) |
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PEF2235NV4.1-IPAT | Infineon Technologies |
Description: ISDN PRIMARY ACCESS TRANSCEICER Packaging: Bulk |
на замовлення 2390 шт: термін постачання 21-31 дні (днів) |
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PEF2235NV4.1 | Infineon Technologies |
Description: ISDN PRIMARY ACCESS TRANSCEICER Packaging: Bulk |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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PEF22553HTV2.1 | Infineon Technologies |
Description: LANTIQ PEF22553 TELECOMS IC Packaging: Bulk |
на замовлення 660 шт: термін постачання 21-31 дні (днів) |
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IPA040N08NM5SXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 109µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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CYPAS211A132LQXQTXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYPAS211A132LQXQTXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IRG4BH20K-SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 23ns/93ns Switching Energy: 450µJ (on), 440µJ (off) Test Condition: 960V, 5A, 50Ohm, 15V Gate Charge: 28 nC Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 22 A Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
TLE4274GSV25HTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 2.5V PSRR: 60dB (100Hz) Voltage Dropout (Max): 2V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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S99PL032J0080 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY7C1413KV18-300BZCT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCM9WICED_SENSE2 | Infineon Technologies |
Description: BLUETOOTH/802.15.1 WICEDSENSE2 B Packaging: Bulk For Use With/Related Products: BCM20737 Frequency: 2.4GHz Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE) Supplied Contents: Board(s) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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BCM92073X_LE_TAG4 | Infineon Technologies |
Description: EVALUATION AND DEBUG BOARD FOR T Packaging: Bulk For Use With/Related Products: BCM2073X Frequency: 2.4GHz Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE) Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCM92073X_LE_KIT | Infineon Technologies |
![]() Packaging: Bulk For Use With/Related Products: BCM2073X Frequency: 2.4GHz Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE) Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BCM920705EMB_ECLK | Infineon Technologies |
![]() Packaging: Bulk For Use With/Related Products: BCM920705 Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DDB6U180N16RRB37BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Supplier Device Package: Module |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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DDB6U180N22RBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO Packaging: Tray |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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TLE4973AE35S5S0001XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5V Sensor Type: Hall Effect For Measuring: DC Supplier Device Package: PG-VSON-6-4 Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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C167CSLMCAKXUMA3 | Infineon Technologies |
![]() Packaging: Bulk DigiKey Programmable: Not Verified Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 11K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-8 Number of I/O: 111 |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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IQE004NE1LM7ATMA1 |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 81.65 грн |
IQE004NE1LM7ATMA1 |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 188.15 грн |
10+ | 150.53 грн |
100+ | 119.78 грн |
500+ | 95.12 грн |
1000+ | 80.70 грн |
2000+ | 76.67 грн |
IQE004NE1LM7CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
товару немає в наявності
В кошику
од. на суму грн.
IQE004NE1LM7CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 7847 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 170.69 грн |
10+ | 117.20 грн |
100+ | 85.01 грн |
500+ | 68.28 грн |
IQE004NE1LM7SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6000+ | 61.65 грн |
IQE004NE1LM7SCATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
на замовлення 10543 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 160.37 грн |
10+ | 112.46 грн |
100+ | 85.01 грн |
500+ | 68.19 грн |
IGC54T65R3QEX1SA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
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S29GL512S11TFI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
на замовлення 517 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 726.41 грн |
10+ | 647.60 грн |
25+ | 632.94 грн |
40+ | 590.80 грн |
91+ | 520.08 грн |
273+ | 494.27 грн |
455+ | 481.30 грн |
S29GL128P90FFIR20 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 807 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 469.19 грн |
10+ | 420.47 грн |
25+ | 407.72 грн |
50+ | 373.62 грн |
180+ | 357.01 грн |
360+ | 348.15 грн |
540+ | 337.39 грн |
ISC035N10NM5LFATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
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ISC035N10NM5LFATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Description: OPTIMOSTM5LINEARFET100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
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REFICC80QSG84W3BPATOBO1 |
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Виробник: Infineon Technologies
Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7889.70 грн |
2EDN8523RXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
CY7C652148-24LTXIT |
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Виробник: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
на замовлення 2219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 213.56 грн |
10+ | 154.12 грн |
25+ | 141.25 грн |
100+ | 119.22 грн |
250+ | 112.86 грн |
500+ | 109.03 грн |
1000+ | 104.14 грн |
CY7C65223-24LTXIT |
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Виробник: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
на замовлення 1393 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 224.67 грн |
10+ | 162.30 грн |
25+ | 148.77 грн |
100+ | 125.57 грн |
250+ | 118.87 грн |
500+ | 114.83 грн |
1000+ | 109.68 грн |
CYT2B95BACQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
500+ | 606.36 грн |
CYT2B95BACQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1063.02 грн |
10+ | 807.91 грн |
25+ | 753.88 грн |
100+ | 651.77 грн |
250+ | 625.21 грн |
CYT2B94CACQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
500+ | 802.63 грн |
CYT2B94CACQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Cut Tape (CT)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Cut Tape (CT)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1162.26 грн |
10+ | 1028.77 грн |
25+ | 986.13 грн |
100+ | 815.38 грн |
250+ | 775.36 грн |
CYT2B95CACQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
CYT2B95CACQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 388 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1069.37 грн |
10+ | 815.02 грн |
25+ | 761.28 грн |
100+ | 659.02 грн |
250+ | 632.61 грн |
CYT2BL3CAAQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4.063MB FLSH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 45x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4.063MB FLSH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 45x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1412.33 грн |
10+ | 1084.12 грн |
25+ | 1015.18 грн |
100+ | 881.62 грн |
250+ | 847.74 грн |
500+ | 827.32 грн |
CYT2B95BACQ0AZSGS |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1130.50 грн |
10+ | 1000.26 грн |
25+ | 958.88 грн |
90+ | 792.84 грн |
270+ | 753.93 грн |
450+ | 705.29 грн |
CYT2B94CACQ0AZSGS |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1206.72 грн |
10+ | 1067.99 грн |
25+ | 1023.77 грн |
119+ | 846.50 грн |
238+ | 804.95 грн |
476+ | 753.02 грн |
952+ | 679.38 грн |
CYT2B95CACQ0AZSGS |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1248.79 грн |
10+ | 1105.30 грн |
25+ | 1059.46 грн |
90+ | 876.01 грн |
270+ | 833.02 грн |
450+ | 779.28 грн |
CYAT817AZS61-3A002 |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 810 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2133.19 грн |
10+ | 1894.17 грн |
25+ | 1808.99 грн |
90+ | 1517.92 грн |
270+ | 1448.02 грн |
450+ | 1378.11 грн |
FZ1500R33HE3C1BPSA1 |
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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од. на суму грн.
IRF7811AVTRPBF | ![]() |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
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од. на суму грн.
IRF7811AVTRPBF | ![]() |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
AIMBG75R140M1HXTMA1 |
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на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 201.94 грн |
AIMBG75R140M1HXTMA1 |
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на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 496.98 грн |
10+ | 323.15 грн |
100+ | 234.85 грн |
500+ | 185.01 грн |
AIMDQ75R140M1HXUMA1 |
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на замовлення 724 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 510.47 грн |
10+ | 332.17 грн |
100+ | 241.85 грн |
AIMZA75R140M1HXKSA1 |
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Виробник: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
на замовлення 230 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 539.05 грн |
30+ | 300.52 грн |
120+ | 252.28 грн |
ESD111B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
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ESD111B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
на замовлення 14900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.50 грн |
36+ | 8.72 грн |
100+ | 4.10 грн |
500+ | 3.60 грн |
1000+ | 3.22 грн |
2000+ | 3.12 грн |
5000+ | 2.98 грн |
ESD113B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.6VWM 8V PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 36W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 8V PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 36W
Power Line Protection: No
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PVT322APBF |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
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IQDH45N04LM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQDH45N04LM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
на замовлення 4610 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 280.24 грн |
10+ | 189.90 грн |
100+ | 136.43 грн |
500+ | 118.22 грн |
PEF2235NV4.1-IPAT |
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 1218.79 грн |
PEF2235NV4.1 |
на замовлення 170 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 1218.79 грн |
PEF22553HTV2.1 |
на замовлення 660 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 3060.26 грн |
IPA040N08NM5SXKSA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 109µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 109µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 283.42 грн |
10+ | 179.12 грн |
100+ | 125.83 грн |
CYPAS211A132LQXQTXUMA1 |
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Виробник: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
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CYPAS211A132LQXQTXUMA1 |
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Виробник: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 324.70 грн |
10+ | 237.60 грн |
25+ | 218.86 грн |
100+ | 186.02 грн |
250+ | 176.79 грн |
500+ | 171.23 грн |
1000+ | 163.92 грн |
IRG4BH20K-SPBF |
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Виробник: Infineon Technologies
Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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TLE4274GSV25HTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 125.43 грн |
10+ | 88.83 грн |
25+ | 80.73 грн |
100+ | 67.43 грн |
250+ | 63.46 грн |
500+ | 61.06 грн |
1000+ | 58.12 грн |
CY7C1413KV18-300BZCT |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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BCM9WICED_SENSE2 |
Виробник: Infineon Technologies
Description: BLUETOOTH/802.15.1 WICEDSENSE2 B
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Description: BLUETOOTH/802.15.1 WICEDSENSE2 B
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1462.35 грн |
BCM92073X_LE_TAG4 |
Виробник: Infineon Technologies
Description: EVALUATION AND DEBUG BOARD FOR T
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Description: EVALUATION AND DEBUG BOARD FOR T
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
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BCM92073X_LE_KIT |
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Виробник: Infineon Technologies
Description: WICED SMART DEVELOPMENT KIT FOR
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Description: WICED SMART DEVELOPMENT KIT FOR
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
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BCM920705EMB_ECLK |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BCM920705
Packaging: Bulk
For Use With/Related Products: BCM920705
Supplied Contents: Board(s)
Description: EVAL BOARD FOR BCM920705
Packaging: Bulk
For Use With/Related Products: BCM920705
Supplied Contents: Board(s)
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DDB6U180N16RRB37BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Supplier Device Package: Module
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Supplier Device Package: Module
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 7598.61 грн |
DDB6U180N22RBPSA1 |
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6171.72 грн |
15+ | 4712.16 грн |
TLE4973AE35S5S0001XUMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
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C167CSLMCAKXUMA3 |
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Виробник: Infineon Technologies
Description: C167CS - LEGACY 16-BIT MICROCONT
Packaging: Bulk
DigiKey Programmable: Not Verified
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
Description: C167CS - LEGACY 16-BIT MICROCONT
Packaging: Bulk
DigiKey Programmable: Not Verified
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 4497.72 грн |