Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129550) > Сторінка 680 з 2160

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S29GL01GS11DHI020 S29GL01GS11DHI020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)
1+769.63 грн
10+687.75 грн
25+666.34 грн
50+610.21 грн
100+595.19 грн
260+574.77 грн
520+552.28 грн
В кошику  од. на суму  грн.
S29GL01GT10DHI020 S29GL01GT10DHI020 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-cn.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
1+2151.31 грн
10+1919.22 грн
25+1858.42 грн
50+1701.25 грн
100+1658.90 грн
В кошику  од. на суму  грн.
CY9BF166KZPMC-G-JNE2 CY9BF166KZPMC-G-JNE2 Infineon Technologies Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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REFSSCBACDC1PH16ATOBO1 REFSSCBACDC1PH16ATOBO1 Infineon Technologies Description: POWER MANAGEMENT IC DEVELOPMENT
Packaging: Box
Function: Electronic Circuit Breaker (ECB)
Type: Circuit Protection
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
товару немає в наявності
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KITXMC48AUTBASEV3TOBO1 KITXMC48AUTBASEV3TOBO1 Infineon Technologies Infineon-XMC4800%20Automation%20Board-V2_PB-PB-v01_00-EN.pdf?fileId=5546d4625e763904015ec7925cbc2cdc Description: AUTOMATIONBOARD XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
Platform: AutomationBoard
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+15735.40 грн
В кошику  од. на суму  грн.
IPT067N20NM6ATMA1 IPT067N20NM6ATMA1 Infineon Technologies infineon-ipt067n20nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+209.86 грн
Мінімальне замовлення: 2000 шт
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IPT067N20NM6ATMA1 IPT067N20NM6ATMA1 Infineon Technologies infineon-ipt067n20nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 4028 шт:
термін постачання 21-31 дні (днів)
1+540.80 грн
10+352.19 грн
50+280.06 грн
100+241.05 грн
500+232.14 грн
В кошику  од. на суму  грн.
IPF067N20NM6ATMA1 IPF067N20NM6ATMA1 Infineon Technologies Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IPF067N20NM6ATMA1 IPF067N20NM6ATMA1 Infineon Technologies Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
1+581.18 грн
10+380.02 грн
50+302.99 грн
100+261.08 грн
500+254.74 грн
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T1620N65TOFXPSA1 T1620N65TOFXPSA1 Infineon Technologies Infineon-T1620N65TOF%20PR-DS-v03_01-EN.pdf?fileId=db3a304331f858f401320548b00b0682 Description: SCR MODULE 6.5KV 2530A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2530 A
Voltage - Off State: 6.5 kV
товару немає в наявності
 Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFH5304TRPBF IRFH5304TRPBF Infineon Technologies irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7 Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
на замовлення 10924 шт:
термін постачання 21-31 дні (днів)
555+37.39 грн
Мінімальне замовлення: 555 шт
В кошику  од. на суму  грн.
IDW50E60FKSA1 IDW50E60FKSA1 Infineon Technologies Infineon-IDW50E60-DS-v02_02-en.pdf?fileId=db3a30433cd75ebf013cf1ddd0fb255a Description: DIODE STANDARD 600V 80A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
2+208.24 грн
30+107.81 грн
120+87.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY7C15632KV18-400BZC CY7C15632KV18-400BZC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 136 шт
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CYW20702A1KWFBGT CYW20702A1KWFBGT Infineon Technologies Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
5+69.68 грн
10+58.10 грн
25+54.84 грн
100+47.16 грн
250+44.58 грн
500+42.76 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
CYW20742A2KFB1GT CYW20742A2KFB1GT Infineon Technologies 5047 Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
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FF3MR12KM1HHPSA1 FF3MR12KM1HHPSA1 Infineon Technologies Infineon-FF3MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60c91720d56 Description: MOSFET 2N-CH 1200V 190A AG62MMHB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+20479.85 грн
10+16973.92 грн
В кошику  од. на суму  грн.
64-2127PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 100V 190A D2PAK-7
Packaging: Tube
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S29GL064S80DHB020HA Infineon Technologies Description: INFINEON
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 80 ns
Memory Organization: 64Mb 8M x 8, 4M x 16
Qualification: AEC-Q100
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S29GL256N11TFA013 S29GL256N11TFA013 Infineon Technologies infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL256N11TFA023 S29GL256N11TFA023 Infineon Technologies infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL256N11FFVR22 S29GL256N11FFVR22 Infineon Technologies infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
S29GL256N11FFA010 S29GL256N11FFA010 Infineon Technologies infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 180 шт
В кошику  од. на суму  грн.
S29GL256N10TFI010 S29GL256N10TFI010 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N10FFI010 S29GL256N10FFI010 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Box
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N10FAI012 S29GL256N10FAI012 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N11FAI020 S29GL256N11FAI020 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N11TFIV20 S29GL256N11TFIV20 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N90FFIR20 S29GL256N90FFIR20 Infineon Technologies download Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N10FFI013 S29GL256N10FFI013 Infineon Technologies download Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N10TFA023 S29GL256N10TFA023 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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S29GL256N10TFI020 S29GL256N10TFI020 Infineon Technologies download Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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IMT65R163M1HXUMA1 IMT65R163M1HXUMA1 Infineon Technologies Infineon-IMT65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66c62e71d3 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMT65R163M1HXUMA1 IMT65R163M1HXUMA1 Infineon Technologies Infineon-IMT65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66c62e71d3 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1594 шт:
термін постачання 21-31 дні (днів)
1+411.73 грн
10+265.49 грн
100+191.27 грн
500+149.85 грн
В кошику  од. на суму  грн.
IPT009N06NM5ATMA1 IPT009N06NM5ATMA1 Infineon Technologies Infineon-IPT009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d0189912417dc5f79 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 220µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT009N06NM5ATMA1 IPT009N06NM5ATMA1 Infineon Technologies Infineon-IPT009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d0189912417dc5f79 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 220µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
1+437.07 грн
10+291.65 грн
100+217.17 грн
500+189.23 грн
В кошику  од. на суму  грн.
S29GL256S90FHSS10 S29GL256S90FHSS10 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
S71NS512RD0ZHEUL0 Infineon Technologies S71NS-R_Rev09_1-29-14.pdf Description: IC FLASH MEMORY 48TSOP
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 1036 шт:
термін постачання 21-31 дні (днів)
1+586.72 грн
10+520.31 грн
25+509.48 грн
50+476.49 грн
100+427.54 грн
250+414.62 грн
500+387.81 грн
1000+374.29 грн
В кошику  од. на суму  грн.
IPA95R750P7XKSA1 IPA95R750P7XKSA1 Infineon Technologies Infineon-IPA95R750P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b4b0fd3565d Description: MOSFET N-CH 950V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
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IQE008N03LM5SCATMA1 IQE008N03LM5SCATMA1 Infineon Technologies Infineon-IQE008N03LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b229d408c2eed Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHSON-8
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
IQE008N03LM5SCATMA1 IQE008N03LM5SCATMA1 Infineon Technologies Infineon-IQE008N03LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b229d408c2eed Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHSON-8
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IQE008N03LM5CGSCATMA1 IQE008N03LM5CGSCATMA1 Infineon Technologies Infineon-IQE008N03LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b22d442a62f57 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHTFN-9
товару немає в наявності
 Мінімальне замовлення: 6000 шт
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IQE008N03LM5CGSCATMA1 IQE008N03LM5CGSCATMA1 Infineon Technologies Infineon-IQE008N03LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b22d442a62f57 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHTFN-9
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IPB50CN10NGATMA1 IPB50CN10NGATMA1 Infineon Technologies IPx50CN10N_G.pdf Description: MOSFET N-CH 100V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
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IPB50R299CPATMA1 IPB50R299CPATMA1 Infineon Technologies IPB50R299CP.pdf Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 65886 шт:
термін постачання 21-31 дні (днів)
209+99.70 грн
Мінімальне замовлення: 209 шт
В кошику  од. на суму  грн.
IRS2112PBF IRS2112PBF Infineon Technologies irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 10525 шт:
термін постачання 21-31 дні (днів)
114+196.57 грн
Мінімальне замовлення: 114 шт
В кошику  од. на суму  грн.
IRS2112PBF IRS2112PBF Infineon Technologies irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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FF1200XTR17T2P5PBPSA1 FF1200XTR17T2P5PBPSA1 Infineon Technologies Infineon-FF1200XTR17T2P5P-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7bf9a9ea7c3b Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.2kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 56000 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+68115.99 грн
В кошику  од. на суму  грн.
CY90F387SPMCR-GSE1 CY90F387SPMCR-GSE1 Infineon Technologies download Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CYPD7271-68LQXQT CYPD7271-68LQXQT Infineon Technologies Infineon-CYPD7271_EZ-PD_TM_CCG7DC_dual-port_USB-C_power_delivery_and_DC-DC_controller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c83cd3081018410c446fe37e2 Description: CCG7D
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CYPD7271-68LQXQT CYPD7271-68LQXQT Infineon Technologies Infineon-CYPD7271_EZ-PD_TM_CCG7DC_dual-port_USB-C_power_delivery_and_DC-DC_controller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c83cd3081018410c446fe37e2 Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 3686 шт:
термін постачання 21-31 дні (днів)
1+406.98 грн
10+299.35 грн
50+262.24 грн
100+235.32 грн
500+217.07 грн
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F4100R12KS4BOSA1 F4100R12KS4BOSA1 Infineon Technologies Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851 Description: IGBT MOD 1200V 130A 660W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+10054.37 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPB60R105CFD7ATMA1 IPB60R105CFD7ATMA1 Infineon Technologies Infineon-IPB60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb24e552a198a Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)
1+391.15 грн
10+250.70 грн
50+196.64 грн
100+168.20 грн
500+150.87 грн
В кошику  од. на суму  грн.
IPB60R145CFD7ATMA1 IPB60R145CFD7ATMA1 Infineon Technologies Infineon-IPB60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2979db419c7 Description: MOSFET N-CH 600V 16A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
2+294.55 грн
10+186.88 грн
100+131.88 грн
500+113.56 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Infineon Technologies Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
275+83.08 грн
Мінімальне замовлення: 275 шт
В кошику  од. на суму  грн.
CY8C4146LQI-S422 CY8C4146LQI-S422 Infineon Technologies infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 3894 шт:
термін постачання 21-31 дні (днів)
2+271.59 грн
10+196.95 грн
50+171.05 грн
100+153.01 грн
490+140.40 грн
980+136.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY8C4126LTI-M445 CY8C4126LTI-M445 Infineon Technologies Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
AIMZH120R010M1TXKSA1 AIMZH120R010M1TXKSA1 Infineon Technologies Infineon-AIMZH120R010M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68e9fea84a79 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1841 шт:
термін постачання 21-31 дні (днів)
1+2372.23 грн
30+1495.56 грн
60+1401.96 грн
120+1281.32 грн
В кошику  од. на суму  грн.
TLE4287GXUMA1 TLE4287GXUMA1 Infineon Technologies TLE4287G_Rev1.41_2012-01-30.pdf Description: IC REG LIN 5V 250MA P-DSO-14-8
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 165°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Hold, Reset
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 2.5V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
FF1000R17IE4DB2BOSA1 FF1000R17IE4DB2BOSA1 Infineon Technologies Infineon-FF1000R17IE4D_B2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c80f4d3290180f5b09c001332 Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+45597.26 грн
В кошику  од. на суму  грн.
TZ500N12KOFHPSA1 TZ500N12KOFHPSA1 Infineon Technologies Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21 Description: SCR MODULE 1.2KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS11DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHI020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+769.63 грн
10+687.75 грн
25+666.34 грн
50+610.21 грн
100+595.19 грн
260+574.77 грн
520+552.28 грн
В кошику  од. на суму  грн.
S29GL01GT10DHI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-cn.pdf
S29GL01GT10DHI020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2151.31 грн
10+1919.22 грн
25+1858.42 грн
50+1701.25 грн
100+1658.90 грн
В кошику  од. на суму  грн.
CY9BF166KZPMC-G-JNE2
CY9BF166KZPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
REFSSCBACDC1PH16ATOBO1
REFSSCBACDC1PH16ATOBO1
Виробник: Infineon Technologies
Description: POWER MANAGEMENT IC DEVELOPMENT
Packaging: Box
Function: Electronic Circuit Breaker (ECB)
Type: Circuit Protection
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
товару немає в наявності
В кошику  од. на суму  грн.
KITXMC48AUTBASEV3TOBO1 Infineon-XMC4800%20Automation%20Board-V2_PB-PB-v01_00-EN.pdf?fileId=5546d4625e763904015ec7925cbc2cdc
KITXMC48AUTBASEV3TOBO1
Виробник: Infineon Technologies
Description: AUTOMATIONBOARD XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
Platform: AutomationBoard
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+15735.40 грн
В кошику  од. на суму  грн.
IPT067N20NM6ATMA1 infineon-ipt067n20nm6-datasheet-en.pdf
IPT067N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+209.86 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT067N20NM6ATMA1 infineon-ipt067n20nm6-datasheet-en.pdf
IPT067N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 4028 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+540.80 грн
10+352.19 грн
50+280.06 грн
100+241.05 грн
500+232.14 грн
В кошику  од. на суму  грн.
IPF067N20NM6ATMA1 Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80
IPF067N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IPF067N20NM6ATMA1 Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80
IPF067N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+581.18 грн
10+380.02 грн
50+302.99 грн
100+261.08 грн
500+254.74 грн
В кошику  од. на суму  грн.
T1620N65TOFXPSA1 Infineon-T1620N65TOF%20PR-DS-v03_01-EN.pdf?fileId=db3a304331f858f401320548b00b0682
T1620N65TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 6.5KV 2530A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2530 A
Voltage - Off State: 6.5 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFH5304TRPBF irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7
IRFH5304TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
на замовлення 10924 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
555+37.39 грн
Мінімальне замовлення: 555 шт
В кошику  од. на суму  грн.
IDW50E60FKSA1 Infineon-IDW50E60-DS-v02_02-en.pdf?fileId=db3a30433cd75ebf013cf1ddd0fb255a
IDW50E60FKSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 80A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+208.24 грн
30+107.81 грн
120+87.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY7C15632KV18-400BZC download
CY7C15632KV18-400BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику  од. на суму  грн.
CYW20702A1KWFBGT Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20702A1KWFBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+69.68 грн
10+58.10 грн
25+54.84 грн
100+47.16 грн
250+44.58 грн
500+42.76 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
CYW20742A2KFB1GT 5047
CYW20742A2KFB1GT
Виробник: Infineon Technologies
Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FF3MR12KM1HHPSA1 Infineon-FF3MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60c91720d56
FF3MR12KM1HHPSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 190A AG62MMHB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+20479.85 грн
10+16973.92 грн
В кошику  од. на суму  грн.
64-2127PBF Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK-7
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
S29GL064S80DHB020HA
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 80 ns
Memory Organization: 64Mb 8M x 8, 4M x 16
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N11TFA013 infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r
S29GL256N11TFA013
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL256N11TFA023 infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r
S29GL256N11TFA023
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
S29GL256N11FFVR22 infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r
S29GL256N11FFVR22
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
S29GL256N11FFA010 infineon-s29gl512n-s29gl256n-s29gl128n-512-256-128-mbit-3-v-page-flash-featuring-110-nm-mirrorbit-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7c63d5937&utm_source=cypress&utm_medium=r
S29GL256N11FFA010
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 180 шт
В кошику  од. на суму  грн.
S29GL256N10TFI010 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N10TFI010
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N10FFI010 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N10FFI010
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Box
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N10FAI012 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N10FAI012
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N11FAI020 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N11FAI020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N11TFIV20 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N11TFIV20
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N90FFIR20 download
S29GL256N90FFIR20
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N10FFI013 download
S29GL256N10FFI013
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N10TFA023
S29GL256N10TFA023
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL256N10TFI020 download
S29GL256N10TFI020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R163M1HXUMA1 Infineon-IMT65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66c62e71d3
IMT65R163M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMT65R163M1HXUMA1 Infineon-IMT65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66c62e71d3
IMT65R163M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1594 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+411.73 грн
10+265.49 грн
100+191.27 грн
500+149.85 грн
В кошику  од. на суму  грн.
IPT009N06NM5ATMA1 Infineon-IPT009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d0189912417dc5f79
IPT009N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 220µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT009N06NM5ATMA1 Infineon-IPT009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d0189912417dc5f79
IPT009N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 220µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+437.07 грн
10+291.65 грн
100+217.17 грн
500+189.23 грн
В кошику  од. на суму  грн.
S29GL256S90FHSS10 PdfFile_133368.pdf
S29GL256S90FHSS10
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
S71NS512RD0ZHEUL0 S71NS-R_Rev09_1-29-14.pdf
Виробник: Infineon Technologies
Description: IC FLASH MEMORY 48TSOP
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 1036 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+586.72 грн
10+520.31 грн
25+509.48 грн
50+476.49 грн
100+427.54 грн
250+414.62 грн
500+387.81 грн
1000+374.29 грн
В кошику  од. на суму  грн.
IPA95R750P7XKSA1 Infineon-IPA95R750P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b4b0fd3565d
IPA95R750P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IQE008N03LM5SCATMA1 Infineon-IQE008N03LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b229d408c2eed
IQE008N03LM5SCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHSON-8
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
IQE008N03LM5SCATMA1 Infineon-IQE008N03LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b229d408c2eed
IQE008N03LM5SCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHSON-8
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IQE008N03LM5CGSCATMA1 Infineon-IQE008N03LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b22d442a62f57
IQE008N03LM5CGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHTFN-9
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
IQE008N03LM5CGSCATMA1 Infineon-IQE008N03LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b22d442a62f57
IQE008N03LM5CGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHTFN-9
товару немає в наявності
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IPB50CN10NGATMA1 IPx50CN10N_G.pdf
IPB50CN10NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
товару немає в наявності
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IPB50R299CPATMA1 IPB50R299CP.pdf
IPB50R299CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 65886 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
209+99.70 грн
Мінімальне замовлення: 209 шт
В кошику  од. на суму  грн.
IRS2112PBF irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5
IRS2112PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 10525 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
114+196.57 грн
Мінімальне замовлення: 114 шт
В кошику  од. на суму  грн.
IRS2112PBF irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5
IRS2112PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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FF1200XTR17T2P5PBPSA1 Infineon-FF1200XTR17T2P5P-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7bf9a9ea7c3b
FF1200XTR17T2P5PBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.2kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 56000 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+68115.99 грн
В кошику  од. на суму  грн.
CY90F387SPMCR-GSE1 download
CY90F387SPMCR-GSE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CYPD7271-68LQXQT Infineon-CYPD7271_EZ-PD_TM_CCG7DC_dual-port_USB-C_power_delivery_and_DC-DC_controller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c83cd3081018410c446fe37e2
CYPD7271-68LQXQT
Виробник: Infineon Technologies
Description: CCG7D
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CYPD7271-68LQXQT Infineon-CYPD7271_EZ-PD_TM_CCG7DC_dual-port_USB-C_power_delivery_and_DC-DC_controller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c83cd3081018410c446fe37e2
CYPD7271-68LQXQT
Виробник: Infineon Technologies
Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 3686 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+406.98 грн
10+299.35 грн
50+262.24 грн
100+235.32 грн
500+217.07 грн
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F4100R12KS4BOSA1 Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851
F4100R12KS4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+10054.37 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPB60R105CFD7ATMA1 Infineon-IPB60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb24e552a198a
IPB60R105CFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+391.15 грн
10+250.70 грн
50+196.64 грн
100+168.20 грн
500+150.87 грн
В кошику  од. на суму  грн.
IPB60R145CFD7ATMA1 Infineon-IPB60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2979db419c7
IPB60R145CFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+294.55 грн
10+186.88 грн
100+131.88 грн
500+113.56 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUZ30AH3045AATMA1 Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f
BUZ30AH3045AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
275+83.08 грн
Мінімальне замовлення: 275 шт
В кошику  од. на суму  грн.
CY8C4146LQI-S422 infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146LQI-S422
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 3894 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+271.59 грн
10+196.95 грн
50+171.05 грн
100+153.01 грн
490+140.40 грн
980+136.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY8C4126LTI-M445 Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4126LTI-M445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
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AIMZH120R010M1TXKSA1 Infineon-AIMZH120R010M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68e9fea84a79
AIMZH120R010M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1841 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2372.23 грн
30+1495.56 грн
60+1401.96 грн
120+1281.32 грн
В кошику  од. на суму  грн.
TLE4287GXUMA1 TLE4287G_Rev1.41_2012-01-30.pdf
TLE4287GXUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 250MA P-DSO-14-8
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 165°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Hold, Reset
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 2.5V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
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FF1000R17IE4DB2BOSA1 Infineon-FF1000R17IE4D_B2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c80f4d3290180f5b09c001332
FF1000R17IE4DB2BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+45597.26 грн
В кошику  од. на суму  грн.
TZ500N12KOFHPSA1 Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21
TZ500N12KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.2 kV
товару немає в наявності
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