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CY8C3866AXA-039 CY8C3866AXA-039 Infineon Technologies download Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3866AXA-040 CY8C3866AXA-040 Infineon Technologies download Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3866LTI-209 CY8C3866LTI-209 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4125PVS-482Z CY8C4125PVS-482Z Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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6MS30017E43W40372NOSA1 6MS30017E43W40372NOSA1 Infineon Technologies Infineon-6MS30017E43W40372-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace9a7a645d Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 29140 W
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CY22800KFXCT CY22800KFXCT Infineon Technologies Infineon-CY22800_Universal_Programmable_Clock_Generator_(UPCG)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5258e3a88&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22800KFXC CY22800KFXC Infineon Technologies Infineon-CY22800_Universal_Programmable_Clock_Generator_(UPCG)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5258e3a88&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22800FXC CY22800FXC Infineon Technologies CY22800 Rev B.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22800FXC-001A CY22800FXC-001A Infineon Technologies CY22800 Rev B.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-002A CY22800FXC-002A Infineon Technologies CY22800 Rev B.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-009A CY22800FXC-009A Infineon Technologies CY22800%20Rev%20B.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-012A CY22800FXC-012A Infineon Technologies CY22800 Rev B.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-023A CY22800FXC-023A Infineon Technologies CY22800 Rev B.pdf Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 54MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: MPEG-2, DTV, STB
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-027A CY22800FXC-027A Infineon Technologies CY22800 Rev B.pdf Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 27.027MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: MPEG-2, DTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-029A CY22800FXC-029A Infineon Technologies CY22800 Rev B.pdf Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 48MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-032A CY22800FXC-032A Infineon Technologies CY22800 Rev B.pdf Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 148.5MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-033A CY22800FXC-033A Infineon Technologies CY22800 Rev B.pdf Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-035A CY22800FXC-035A Infineon Technologies CY22800 Rev B.pdf Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 24.576MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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6MS16017P43W40382NOSA1 6MS16017P43W40382NOSA1 Infineon Technologies Infineon-6MS16017P43W40382-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace8ab36459 Description: IGBT MODULE 1700V 880A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
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AUIRFZ44ZS AUIRFZ44ZS Infineon Technologies auirfz44z.pdf?fileId=5546d462533600a4015355b9f8771509 Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
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D711N60TXPSA1 D711N60TXPSA1 Infineon Technologies Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f Description: DIODE GEN PURP 6KV 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 6000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6000 V
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BCV 28 E6327 BCV 28 E6327 Infineon Technologies BCV28_48.pdf Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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BCV 28 E6327 BCV 28 E6327 Infineon Technologies BCV28_48.pdf Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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IRFR15N20DPBF IRFR15N20DPBF Infineon Technologies irfr15n20dpbf.pdf description Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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AIKBE50N65RF5ATMA1 AIKBE50N65RF5ATMA1 Infineon Technologies Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146 Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
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AIKBE50N65RF5ATMA1 AIKBE50N65RF5ATMA1 Infineon Technologies Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146 Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
1+657.73 грн
10+434.33 грн
100+349.13 грн
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IMW120R140M1HXKSA1 IMW120R140M1HXKSA1 Infineon Technologies Infineon-IMW120R140M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdf712669d Description: SICFET N-CH 1.2KV 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
1+535.23 грн
30+281.72 грн
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TPM9673FW2613RPIEBTOBO1 TPM9673FW2613RPIEBTOBO1 Infineon Technologies Infineon-OPTIGA_TPM_SLB_9673_RPi-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c8779172a0187ed7465fa19e8 Description: OPTIGA TPM 9673 RPI EVAL
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Utilized IC / Part: SLB 9673
Platform: Raspberry Pi
товару немає в наявності
В кошику  од. на суму  грн.
SPOC2DBBTS722204ESPTOBO1 SPOC2DBBTS722204ESPTOBO1 Infineon Technologies Description: SPOC-2 DB BTS72220-4ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS72220-4ESP
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+5470.69 грн
В кошику  од. на суму  грн.
STT3400N16P76XPSA1 STT3400N16P76XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
товару немає в наявності
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IPP073N13NM6AKSA1 IPP073N13NM6AKSA1 Infineon Technologies IPP073N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 68 V
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
2+201.43 грн
50+104.95 грн
100+103.24 грн
Мінімальне замовлення: 2
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IPP014N08NM6AKSA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IPP022N12NM6AKSA1 IPP022N12NM6AKSA1 Infineon Technologies Infineon-IPP022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018becc82fed4e78 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
1+584.56 грн
10+382.48 грн
100+280.31 грн
500+232.27 грн
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IPP069N20NM6AKSA1 IPP069N20NM6AKSA1 Infineon Technologies Infineon-IPP069N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327da1ee0f07 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
1+573.87 грн
50+331.52 грн
100+310.38 грн
500+276.73 грн
В кошику  од. на суму  грн.
IRF3205ZPBFAKSA1 IRF3205ZPBFAKSA1 Infineon Technologies infineon-irf3205z-datasheet-en.pdf?fileId=5546d462533600a4015355df030c190f Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
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AUIRFS4127TRL AUIRFS4127TRL Infineon Technologies auirfs4127.pdf?fileId=5546d462533600a4015355b6cec114cd Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
TT122N22KOFHPSA1 Infineon Technologies Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10 Description: SCR MODULE 2.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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AUIRFR024N AUIRFR024N Infineon Technologies AUIRF%28R%2CU%29024N.pdf Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
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IRLB3034PBFXKMA1 IRLB3034PBFXKMA1 Infineon Technologies Infineon-IRLB3034-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153566027b22585 Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
товару немає в наявності
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IPI020N06NAKSA1 IPI020N06NAKSA1 Infineon Technologies IPI020N06N.pdf Description: MOSFET N-CH 60V 29A/120A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
товару немає в наявності
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IRSM836-035MA IRSM836-035MA Infineon Technologies Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tray
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
1+764.61 грн
10+664.64 грн
25+633.75 грн
160+516.40 грн
320+493.19 грн
480+449.68 грн
В кошику  од. на суму  грн.
IRSM836-035MATR IRSM836-035MATR Infineon Technologies Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товару немає в наявності
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IRSM836-035MATR IRSM836-035MATR Infineon Technologies Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62 Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
1+764.61 грн
10+664.64 грн
25+633.75 грн
100+516.40 грн
250+493.19 грн
500+449.67 грн
1000+385.23 грн
В кошику  од. на суму  грн.
IRFB4019PBFXKMA1 IRFB4019PBFXKMA1 Infineon Technologies infineon-irfb4019-datasheet-en.pdf?fileId=5546d462533600a40153561587651e03 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tj)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
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S25FL128SAGMFIR03 S25FL128SAGMFIR03 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
1450+279.14 грн
Мінімальне замовлення: 1450
В кошику  од. на суму  грн.
S25FL128SAGMFIR03 S25FL128SAGMFIR03 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 1494 шт:
термін постачання 21-31 дні (днів)
1+407.79 грн
10+348.12 грн
25+331.98 грн
50+300.56 грн
100+289.92 грн
250+276.44 грн
500+262.28 грн
В кошику  од. на суму  грн.
S25FL128SAGMFM003 S25FL128SAGMFM003 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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S25FL128SAGMFM003 S25FL128SAGMFM003 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1170 шт:
термін постачання 21-31 дні (днів)
1+583.74 грн
10+498.86 грн
25+475.69 грн
50+430.62 грн
100+415.40 грн
250+396.08 грн
500+375.77 грн
В кошику  од. на суму  грн.
IRGB4060DPBF IRGB4060DPBF Infineon Technologies IRGB4060DPBF.pdf description Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
товару немає в наявності
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IRF7380TRPBFXTMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
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IPWS65R022CFD7AXKSA1 Infineon Technologies Infineon-IPWS65R022CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179cce005c602d8 Description: AUTOMOTIVE_COOLMOS PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
товару немає в наявності
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AIDW10S65C5XKSA1 AIDW10S65C5XKSA1 Infineon Technologies Infineon-AIDW10S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2e5c35686 Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q100/101
товару немає в наявності
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PEF4268TV1.1 Infineon Technologies Description: DUSLIC: SUBSCRIBER LINE INTERFAC
Packaging: Bulk
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
91+249.70 грн
Мінімальне замовлення: 91
В кошику  од. на суму  грн.
PEB4264TV1.1GD Infineon Technologies Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
на замовлення 141600 шт:
термін постачання 21-31 дні (днів)
78+291.07 грн
Мінімальне замовлення: 78
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PEB4264-2TV1.1GD Infineon Technologies Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
64+353.49 грн
Мінімальне замовлення: 64
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IRF9952TRPBFXTMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
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XDPS2110XUMA1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+87.83 грн
Мінімальне замовлення: 2500
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XDPS2110XUMA1 Infineon Technologies Description: IC MCU
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+186.63 грн
10+128.81 грн
25+116.10 грн
100+95.82 грн
250+89.55 грн
500+85.77 грн
1000+81.30 грн
Мінімальне замовлення: 2
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IRFB4110PBFXKMA1 IRFB4110PBFXKMA1 Infineon Technologies Infineon-IRFB4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535615a9571e0b Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+215.41 грн
50+100.80 грн
100+93.68 грн
500+71.29 грн
1000+65.94 грн
Мінімальне замовлення: 2
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PEB 3324 HL V1.4 PEB 3324 HL V1.4 Infineon Technologies PEB%2C%20PEF%2033xx.pdf Description: IC TELECOM INTERFACE 176-LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: ADPCM
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LQFP-176-2
Number of Circuits: 4
Power (Watts): 400 mW
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CY8C3866AXA-039 download
CY8C3866AXA-039
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3866AXA-040 download
CY8C3866AXA-040
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3866LTI-209 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866LTI-209
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4125PVS-482Z Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4125PVS-482Z
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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6MS30017E43W40372NOSA1 Infineon-6MS30017E43W40372-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace9a7a645d
6MS30017E43W40372NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 29140 W
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CY22800KFXCT Infineon-CY22800_Universal_Programmable_Clock_Generator_(UPCG)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5258e3a88&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY22800KFXCT
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22800KFXC Infineon-CY22800_Universal_Programmable_Clock_Generator_(UPCG)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5258e3a88&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY22800KFXC
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22800FXC CY22800 Rev B.pdf
CY22800FXC
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22800FXC-001A CY22800 Rev B.pdf
CY22800FXC-001A
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-002A CY22800 Rev B.pdf
CY22800FXC-002A
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-009A CY22800%20Rev%20B.pdf
CY22800FXC-009A
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-012A CY22800 Rev B.pdf
CY22800FXC-012A
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-023A CY22800 Rev B.pdf
CY22800FXC-023A
Виробник: Infineon Technologies
Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 54MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: MPEG-2, DTV, STB
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-027A CY22800 Rev B.pdf
CY22800FXC-027A
Виробник: Infineon Technologies
Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 27.027MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: MPEG-2, DTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-029A CY22800 Rev B.pdf
CY22800FXC-029A
Виробник: Infineon Technologies
Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 48MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-032A CY22800 Rev B.pdf
CY22800FXC-032A
Виробник: Infineon Technologies
Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 148.5MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-033A CY22800 Rev B.pdf
CY22800FXC-033A
Виробник: Infineon Technologies
Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY22800FXC-035A CY22800 Rev B.pdf
CY22800FXC-035A
Виробник: Infineon Technologies
Description: IC PROG CLOCK GEN 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 24.576MHz
Input: Crystal or Other
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: HDTV, STB
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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6MS16017P43W40382NOSA1 Infineon-6MS16017P43W40382-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace8ab36459
6MS16017P43W40382NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 880A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
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AUIRFZ44ZS auirfz44z.pdf?fileId=5546d462533600a4015355b9f8771509
AUIRFZ44ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
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D711N60TXPSA1 Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f
D711N60TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 6KV 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 6000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6000 V
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BCV 28 E6327 BCV28_48.pdf
BCV 28 E6327
Виробник: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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BCV 28 E6327 BCV28_48.pdf
BCV 28 E6327
Виробник: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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IRFR15N20DPBF description irfr15n20dpbf.pdf
IRFR15N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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AIKBE50N65RF5ATMA1 Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146
AIKBE50N65RF5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
товару немає в наявності
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AIKBE50N65RF5ATMA1 Infineon-AIKBE50N65RF5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018be5aabe714146
AIKBE50N65RF5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 96A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-7-U04
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/136ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 400V, 25A, 9Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Qualification: AEC-Q101
на замовлення 516 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+657.73 грн
10+434.33 грн
100+349.13 грн
В кошику  од. на суму  грн.
IMW120R140M1HXKSA1 Infineon-IMW120R140M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdf712669d
IMW120R140M1HXKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+535.23 грн
30+281.72 грн
В кошику  од. на суму  грн.
TPM9673FW2613RPIEBTOBO1 Infineon-OPTIGA_TPM_SLB_9673_RPi-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c8779172a0187ed7465fa19e8
TPM9673FW2613RPIEBTOBO1
Виробник: Infineon Technologies
Description: OPTIGA TPM 9673 RPI EVAL
Packaging: Bulk
Function: Trusted Platform Module (TPM)
Type: Interface
Contents: Board(s)
Utilized IC / Part: SLB 9673
Platform: Raspberry Pi
товару немає в наявності
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SPOC2DBBTS722204ESPTOBO1
SPOC2DBBTS722204ESPTOBO1
Виробник: Infineon Technologies
Description: SPOC-2 DB BTS72220-4ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS72220-4ESP
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5470.69 грн
В кошику  од. на суму  грн.
STT3400N16P76XPSA1
STT3400N16P76XPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
товару немає в наявності
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IPP073N13NM6AKSA1 IPP073N13NM6_Rev2.0_10-16-23.pdf
IPP073N13NM6AKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 68 V
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.43 грн
50+104.95 грн
100+103.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP014N08NM6AKSA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
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IPP022N12NM6AKSA1 Infineon-IPP022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018becc82fed4e78
IPP022N12NM6AKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+584.56 грн
10+382.48 грн
100+280.31 грн
500+232.27 грн
В кошику  од. на суму  грн.
IPP069N20NM6AKSA1 Infineon-IPP069N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327da1ee0f07
IPP069N20NM6AKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+573.87 грн
50+331.52 грн
100+310.38 грн
500+276.73 грн
В кошику  од. на суму  грн.
IRF3205ZPBFAKSA1 infineon-irf3205z-datasheet-en.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZPBFAKSA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
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AUIRFS4127TRL auirfs4127.pdf?fileId=5546d462533600a4015355b6cec114cd
AUIRFS4127TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Qualification: AEC-Q101
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TT122N22KOFHPSA1 Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10
Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.2 kV
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AUIRFR024N AUIRF%28R%2CU%29024N.pdf
AUIRFR024N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
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IRLB3034PBFXKMA1 Infineon-IRLB3034-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153566027b22585
IRLB3034PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
товару немає в наявності
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IPI020N06NAKSA1 IPI020N06N.pdf
IPI020N06NAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 29A/120A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
товару немає в наявності
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IRSM836-035MA Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62
IRSM836-035MA
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tray
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+764.61 грн
10+664.64 грн
25+633.75 грн
160+516.40 грн
320+493.19 грн
480+449.68 грн
В кошику  од. на суму  грн.
IRSM836-035MATR Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62
IRSM836-035MATR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
товару немає в наявності
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IRSM836-035MATR Infineon-IRSM836-035MA-DS-v01_01-EN.pdf?fileId=5546d46256fb43b3015765e044797e62
IRSM836-035MATR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 36PQFN
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: Appliance
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 36-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+764.61 грн
10+664.64 грн
25+633.75 грн
100+516.40 грн
250+493.19 грн
500+449.67 грн
1000+385.23 грн
В кошику  од. на суму  грн.
IRFB4019PBFXKMA1 infineon-irfb4019-datasheet-en.pdf?fileId=5546d462533600a40153561587651e03
IRFB4019PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tj)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
товару немає в наявності
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S25FL128SAGMFIR03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIR03
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1450+279.14 грн
Мінімальне замовлення: 1450
В кошику  од. на суму  грн.
S25FL128SAGMFIR03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIR03
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 1494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+407.79 грн
10+348.12 грн
25+331.98 грн
50+300.56 грн
100+289.92 грн
250+276.44 грн
500+262.28 грн
В кошику  од. на суму  грн.
S25FL128SAGMFM003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFM003
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL128SAGMFM003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFM003
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+583.74 грн
10+498.86 грн
25+475.69 грн
50+430.62 грн
100+415.40 грн
250+396.08 грн
500+375.77 грн
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IRGB4060DPBF description IRGB4060DPBF.pdf
IRGB4060DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
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IRF7380TRPBFXTMA1
Виробник: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
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IPWS65R022CFD7AXKSA1 Infineon-IPWS65R022CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179cce005c602d8
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
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AIDW10S65C5XKSA1 Infineon-AIDW10S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2e5c35686
AIDW10S65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 303pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q100/101
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PEF4268TV1.1
Виробник: Infineon Technologies
Description: DUSLIC: SUBSCRIBER LINE INTERFAC
Packaging: Bulk
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
91+249.70 грн
Мінімальне замовлення: 91
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PEB4264TV1.1GD
Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
на замовлення 141600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
78+291.07 грн
Мінімальне замовлення: 78
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PEB4264-2TV1.1GD
Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
64+353.49 грн
Мінімальне замовлення: 64
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IRF9952TRPBFXTMA1
Виробник: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tape & Reel (TR)
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XDPS2110XUMA1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+87.83 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XDPS2110XUMA1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+186.63 грн
10+128.81 грн
25+116.10 грн
100+95.82 грн
250+89.55 грн
500+85.77 грн
1000+81.30 грн
Мінімальне замовлення: 2
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IRFB4110PBFXKMA1 Infineon-IRFB4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535615a9571e0b
IRFB4110PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+215.41 грн
50+100.80 грн
100+93.68 грн
500+71.29 грн
1000+65.94 грн
Мінімальне замовлення: 2
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PEB 3324 HL V1.4 PEB%2C%20PEF%2033xx.pdf
PEB 3324 HL V1.4
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 176-LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: ADPCM
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LQFP-176-2
Number of Circuits: 4
Power (Watts): 400 mW
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