Продукція > INVENTCHIP > Всі товари виробника INVENTCHIP (22) > Сторінка 1 з 1
Фото | Назва | Виробник | Інформація |
Доступність |
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IV1D06006P3 | Inventchip |
Description: DIODE SIC 650V 16.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 224pF @ 1V, 1MHz Current - Average Rectified (Io): 16.7A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
на замовлення 2482 шт: термін постачання 21-31 дні (днів) |
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IV1D06006P3 | Inventchip |
Description: DIODE SIC 650V 16.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 224pF @ 1V, 1MHz Current - Average Rectified (Io): 16.7A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
товар відсутній |
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IV1D12005O2 | Inventchip | Description: DIODE SIL CARB 1.2KV 17A TO220-2 |
на замовлення 164 шт: термін постачання 21-31 дні (днів) |
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IV1D12010O2 | Inventchip |
Description: DIODE SIL CARB 1.2KV 28A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 575pF @ 1V, 1MHz Current - Average Rectified (Io): 28A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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IV1D12010T2 | Inventchip |
Description: DIODE SIL CARB 1.2KV 30A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 575pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 107 шт: термін постачання 21-31 дні (днів) |
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IV1D12015T2 | Inventchip |
Description: DIODE SIL CARB 1.2KV 44A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 888pF @ 1V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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IV1D12020T2 | Inventchip |
Description: DIODE SIL CARB 1.2KV 54A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1114pF @ 1V, 1MHz Current - Average Rectified (Io): 54A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 120 µA @ 1200 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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IV1D12020T3 | Inventchip |
Description: SIC DIODE, 1200V 20A(10A/LEG), T Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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IV1D12030U3 | Inventchip | Description: SIC DIODE, 1200V 30A(15A/LEG), T |
товар відсутній |
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IV1Q12050T3 | Inventchip |
Description: SIC MOSFET, 1200V 50MOHM, TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V Power Dissipation (Max): 327W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 6mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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IV1Q12050T4 | Inventchip | Description: SIC MOSFET, 1200V 50MOHM, TO-247 |
товар відсутній |
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IV1Q12160T4 | Inventchip |
Description: SIC MOSFET, 1200V 160MOHM, TO-24 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 1.9mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V |
на замовлення 106 шт: термін постачання 21-31 дні (днів) |
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IVCR1401DPR | Inventchip |
Description: SIC MOSFET AND IGBT DRIVER, 4A, Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 19V ~ 25V Input Type: Non-Inverting Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 13ns, 13ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.6V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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IVCR1401DPR | Inventchip |
Description: SIC MOSFET AND IGBT DRIVER, 4A, Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 19V ~ 25V Input Type: Non-Inverting Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 13ns, 13ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.6V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3682 шт: термін постачання 21-31 дні (днів) |
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IVCR1401DR | Inventchip |
Description: SIC MOSFET AND IGBT DRIVER, 4A, Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 19V ~ 25V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 13ns, 13ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.6V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3756 шт: термін постачання 21-31 дні (днів) |
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IVCR1401DR | Inventchip |
Description: SIC MOSFET AND IGBT DRIVER, 4A, Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 19V ~ 25V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 13ns, 13ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.6V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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IVCR1407SR | Inventchip |
Description: GENERAL PURPOSE DRIVER, 24V, 4A Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: SOT-23-5 Rise / Fall Time (Typ): 6ns, 6ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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IVCR1407SR | Inventchip |
Description: GENERAL PURPOSE DRIVER, 24V, 4A Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: SOT-23-5 Rise / Fall Time (Typ): 6ns, 6ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 14623 шт: термін постачання 21-31 дні (днів) |
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IVCR2401DPR | Inventchip |
Description: GENERAL PURPOSE DRIVER, 25V 4A S Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 8V ~ 20V Input Type: Non-Inverting Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 13ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.6V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3785 шт: термін постачання 21-31 дні (днів) |
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IVCR2401DPR | Inventchip |
Description: GENERAL PURPOSE DRIVER, 25V 4A S Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 8V ~ 20V Input Type: Non-Inverting Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 13ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.6V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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IVCR2405DR | Inventchip |
Description: GENERAL PURPOSE DRIVER, 24V, 4A Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 6ns, 6ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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IVCR2405DR | Inventchip |
Description: GENERAL PURPOSE DRIVER, 24V, 4A Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 6ns, 6ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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IV1D06006P3 |
Виробник: Inventchip
Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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2+ | 275.2 грн |
10+ | 222.53 грн |
100+ | 180.04 грн |
500+ | 150.19 грн |
1000+ | 128.6 грн |
IV1D06006P3 |
Виробник: Inventchip
Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
товар відсутній
IV1D12005O2 |
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 17A TO220-2
Description: DIODE SIL CARB 1.2KV 17A TO220-2
на замовлення 164 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 402.39 грн |
10+ | 350.12 грн |
100+ | 289.91 грн |
IV1D12010O2 |
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 28A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 28A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 727.89 грн |
10+ | 600.67 грн |
100+ | 500.57 грн |
IV1D12010T2 |
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 727.89 грн |
10+ | 600.67 грн |
100+ | 500.57 грн |
IV1D12015T2 |
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 886.69 грн |
10+ | 752.13 грн |
100+ | 650.49 грн |
IV1D12020T2 |
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1264.65 грн |
10+ | 1073.12 грн |
100+ | 928.08 грн |
IV1D12020T3 |
Виробник: Inventchip
Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1199.26 грн |
10+ | 1017.84 грн |
100+ | 880.28 грн |
IV1Q12050T3 |
Виробник: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2693.84 грн |
10+ | 2392.44 грн |
IV1Q12160T4 |
Виробник: Inventchip
Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1184.89 грн |
10+ | 1005.31 грн |
100+ | 869.47 грн |
IVCR1401DPR |
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR1401DPR |
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3682 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 182.51 грн |
10+ | 158.11 грн |
25+ | 149.13 грн |
100+ | 119.25 грн |
250+ | 111.97 грн |
500+ | 97.98 грн |
1000+ | 79.85 грн |
IVCR1401DR |
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3756 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 172.45 грн |
10+ | 149.32 грн |
25+ | 140.88 грн |
100+ | 112.62 грн |
250+ | 105.75 грн |
500+ | 92.53 грн |
1000+ | 75.41 грн |
IVCR1401DR |
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR1407SR |
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 45.72 грн |
6000+ | 41.83 грн |
IVCR1407SR |
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 14623 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.78 грн |
10+ | 92.79 грн |
25+ | 88.07 грн |
100+ | 67.88 грн |
250+ | 63.45 грн |
500+ | 56.08 грн |
1000+ | 43.54 грн |
IVCR2401DPR |
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.6 грн |
10+ | 86.91 грн |
25+ | 82.45 грн |
100+ | 63.56 грн |
250+ | 59.41 грн |
500+ | 52.5 грн |
1000+ | 40.77 грн |
IVCR2401DPR |
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR2405DR |
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR2405DR |
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 216.28 грн |
10+ | 186.89 грн |
25+ | 176.69 грн |
100+ | 143.7 грн |
250+ | 136.32 грн |
500+ | 122.32 грн |
1000+ | 101.47 грн |