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IV1D06006O2 IV1D06006O2 Inventchip IV1D06006O2_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 17.4A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Current - Average Rectified (Io): 17.4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
2+304.00 грн
50+163.60 грн
100+150.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)
3+124.94 грн
10+76.63 грн
100+51.42 грн
500+38.13 грн
1000+34.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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IV1D06020T2 IV1D06020T2 Inventchip Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 716pF @ 1V, 1MHz
Current - Average Rectified (Io): 50.1A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 204 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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IV1D12005O2 IV1D12005O2 Inventchip 1599706780871299.pdf Description: DIODE SIL CARB 1.2KV 17A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
1+453.61 грн
50+250.87 грн
100+232.18 грн
В кошику  од. на суму  грн.
IV1D12010O2 IV1D12010O2 Inventchip 1599706340406274.pdf Description: DIODE SIL CARB 1200V 28A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
2+222.03 грн
50+106.63 грн
100+96.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12010T2 IV1D12010T2 Inventchip 1599705049385290.pdf Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
2+245.91 грн
30+129.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12015T2 IV1D12015T2 Inventchip 1599706412830735.pdf Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+982.03 грн
10+833.01 грн
100+720.43 грн
В кошику  од. на суму  грн.
IV1D12020T2 IV1D12020T2 Inventchip IV1D12020T2_V1.1_datasheet.pdf Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1400.62 грн
10+1188.51 грн
100+1027.87 грн
В кошику  од. на суму  грн.
IV1D12020T3 IV1D12020T3 Inventchip 1599705521213647.pdf Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1328.21 грн
10+1127.28 грн
100+974.93 грн
В кошику  од. на суму  грн.
IV1D12030U3 IV1D12030U3 Inventchip IV1D12030U3_V1.1_datasheet.pdf Description: SIC DIODE, 1200V 30A(15A/LEG), T
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IV1Q12050T3 IV1Q12050T3 Inventchip 1604555689872370.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+2983.49 грн
10+2649.68 грн
В кошику  од. на суму  грн.
IV1Q12050T4 IV1Q12050T4 Inventchip 1604555720235348.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
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IV1Q12160T4 IV1Q12160T4 Inventchip 1604555975325242.pdf Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
1+1312.29 грн
10+1113.41 грн
100+962.95 грн
В кошику  од. на суму  грн.
IV1Q12750O3 IV1Q12750O3 Inventchip Description: SIC MOSFET, 1200V 750MOHM, TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 66.9W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV1Q12750T3 IV1Q12750T3 Inventchip Description: SIC MOSFET, 1200V 750MOHM, TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 78.4W (Tc)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IVCC1104EDR IVCC1104EDR Inventchip Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCC1104EDR IVCC1104EDR Inventchip Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCR1401DPR IVCR1401DPR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DPR IVCR1401DPR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3647 шт:
термін постачання 21-31 дні (днів)
2+268.98 грн
10+170.05 грн
25+146.71 грн
100+113.11 грн
250+101.17 грн
500+93.87 грн
1000+86.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR1401DR IVCR1401DR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DR IVCR1401DR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3736 шт:
термін постачання 21-31 дні (днів)
2+257.84 грн
10+162.62 грн
25+140.18 грн
100+107.88 грн
250+96.37 грн
500+89.35 грн
1000+82.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR1407SR IVCR1407SR Inventchip IVCR1407%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+41.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IVCR1407SR IVCR1407SR Inventchip IVCR1407%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5506 шт:
термін постачання 21-31 дні (днів)
2+162.35 грн
10+99.70 грн
25+85.00 грн
100+64.15 грн
250+56.54 грн
500+51.90 грн
1000+47.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)
2+162.35 грн
10+97.40 грн
25+82.15 грн
100+60.84 грн
250+52.87 грн
500+47.96 грн
1000+43.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR2405DR IVCR2405DR Inventchip IVCR2405%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR2405DR IVCR2405DR Inventchip IVCR2405%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3977 шт:
термін постачання 21-31 дні (днів)
1+324.69 грн
10+202.31 грн
25+173.53 грн
100+132.29 грн
250+117.27 грн
500+108.04 грн
1000+98.67 грн
В кошику  од. на суму  грн.
IVCR2504DR IVCR2504DR Inventchip Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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IVCR2504DR IVCR2504DR Inventchip Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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IV1D06006O2 IV1D06006O2_V1.0_datasheet.pdf
IV1D06006O2
Виробник: Inventchip
Description: DIODE SIL CARB 650V 17.4A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Current - Average Rectified (Io): 17.4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.00 грн
50+163.60 грн
100+150.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Виробник: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.94 грн
10+76.63 грн
100+51.42 грн
500+38.13 грн
1000+34.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Виробник: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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IV1D06020T2
IV1D06020T2
Виробник: Inventchip
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 716pF @ 1V, 1MHz
Current - Average Rectified (Io): 50.1A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 204 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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IV1D12005O2 1599706780871299.pdf
IV1D12005O2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 17A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+453.61 грн
50+250.87 грн
100+232.18 грн
В кошику  од. на суму  грн.
IV1D12010O2 1599706340406274.pdf
IV1D12010O2
Виробник: Inventchip
Description: DIODE SIL CARB 1200V 28A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.03 грн
50+106.63 грн
100+96.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12010T2 1599705049385290.pdf
IV1D12010T2
Виробник: Inventchip
Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+245.91 грн
30+129.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12015T2 1599706412830735.pdf
IV1D12015T2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+982.03 грн
10+833.01 грн
100+720.43 грн
В кошику  од. на суму  грн.
IV1D12020T2 IV1D12020T2_V1.1_datasheet.pdf
IV1D12020T2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1400.62 грн
10+1188.51 грн
100+1027.87 грн
В кошику  од. на суму  грн.
IV1D12020T3 1599705521213647.pdf
IV1D12020T3
Виробник: Inventchip
Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1328.21 грн
10+1127.28 грн
100+974.93 грн
В кошику  од. на суму  грн.
IV1D12030U3 IV1D12030U3_V1.1_datasheet.pdf
IV1D12030U3
Виробник: Inventchip
Description: SIC DIODE, 1200V 30A(15A/LEG), T
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IV1Q12050T3 1604555689872370.pdf
IV1Q12050T3
Виробник: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2983.49 грн
10+2649.68 грн
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IV1Q12050T4 1604555720235348.pdf
IV1Q12050T4
Виробник: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
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IV1Q12160T4 1604555975325242.pdf
IV1Q12160T4
Виробник: Inventchip
Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1312.29 грн
10+1113.41 грн
100+962.95 грн
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IV1Q12750O3
IV1Q12750O3
Виробник: Inventchip
Description: SIC MOSFET, 1200V 750MOHM, TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 66.9W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV1Q12750T3
IV1Q12750T3
Виробник: Inventchip
Description: SIC MOSFET, 1200V 750MOHM, TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 78.4W (Tc)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IVCC1104EDR
IVCC1104EDR
Виробник: Inventchip
Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCC1104EDR
IVCC1104EDR
Виробник: Inventchip
Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCR1401DPR IVCR1401-Datasheet.pdf
IVCR1401DPR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DPR IVCR1401-Datasheet.pdf
IVCR1401DPR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+268.98 грн
10+170.05 грн
25+146.71 грн
100+113.11 грн
250+101.17 грн
500+93.87 грн
1000+86.38 грн
Мінімальне замовлення: 2
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IVCR1401DR IVCR1401-Datasheet.pdf
IVCR1401DR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DR IVCR1401-Datasheet.pdf
IVCR1401DR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+257.84 грн
10+162.62 грн
25+140.18 грн
100+107.88 грн
250+96.37 грн
500+89.35 грн
1000+82.14 грн
Мінімальне замовлення: 2
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IVCR1407SR IVCR1407%20Datasheet.pdf
IVCR1407SR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+41.61 грн
Мінімальне замовлення: 3000
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IVCR1407SR IVCR1407%20Datasheet.pdf
IVCR1407SR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5506 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.35 грн
10+99.70 грн
25+85.00 грн
100+64.15 грн
250+56.54 грн
500+51.90 грн
1000+47.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.35 грн
10+97.40 грн
25+82.15 грн
100+60.84 грн
250+52.87 грн
500+47.96 грн
1000+43.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR2405DR IVCR2405%20Datasheet.pdf
IVCR2405DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IVCR2405DR IVCR2405%20Datasheet.pdf
IVCR2405DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3977 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+324.69 грн
10+202.31 грн
25+173.53 грн
100+132.29 грн
250+117.27 грн
500+108.04 грн
1000+98.67 грн
В кошику  од. на суму  грн.
IVCR2504DR
IVCR2504DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IVCR2504DR
IVCR2504DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.