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IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
2+275.2 грн
10+ 222.53 грн
100+ 180.04 грн
500+ 150.19 грн
1000+ 128.6 грн
Мінімальне замовлення: 2
IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
товар відсутній
IV1D12005O2 IV1D12005O2 Inventchip 1599706780871299.pdf Description: DIODE SIL CARB 1.2KV 17A TO220-2
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
1+402.39 грн
10+ 350.12 грн
100+ 289.91 грн
IV1D12010O2 IV1D12010O2 Inventchip 1599706340406274.pdf Description: DIODE SIL CARB 1.2KV 28A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
1+727.89 грн
10+ 600.67 грн
100+ 500.57 грн
IV1D12010T2 IV1D12010T2 Inventchip 1599705049385290.pdf Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
1+727.89 грн
10+ 600.67 грн
100+ 500.57 грн
IV1D12015T2 IV1D12015T2 Inventchip 1599706412830735.pdf Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+886.69 грн
10+ 752.13 грн
100+ 650.49 грн
IV1D12020T2 IV1D12020T2 Inventchip IV1D12020T2_V1.1_datasheet.pdf Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1264.65 грн
10+ 1073.12 грн
100+ 928.08 грн
IV1D12020T3 IV1D12020T3 Inventchip 1599705521213647.pdf Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1199.26 грн
10+ 1017.84 грн
100+ 880.28 грн
IV1D12030U3 IV1D12030U3 Inventchip IV1D12030U3_V1.1_datasheet.pdf Description: SIC DIODE, 1200V 30A(15A/LEG), T
товар відсутній
IV1Q12050T3 IV1Q12050T3 Inventchip 1604555689872370.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+2693.84 грн
10+ 2392.44 грн
IV1Q12050T4 IV1Q12050T4 Inventchip 1604555720235348.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
товар відсутній
IV1Q12160T4 IV1Q12160T4 Inventchip 1604555975325242.pdf Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
1+1184.89 грн
10+ 1005.31 грн
100+ 869.47 грн
IVCR1401DPR IVCR1401DPR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR1401DPR IVCR1401DPR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3682 шт:
термін постачання 21-31 дні (днів)
2+182.51 грн
10+ 158.11 грн
25+ 149.13 грн
100+ 119.25 грн
250+ 111.97 грн
500+ 97.98 грн
1000+ 79.85 грн
Мінімальне замовлення: 2
IVCR1401DR IVCR1401DR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3756 шт:
термін постачання 21-31 дні (днів)
2+172.45 грн
10+ 149.32 грн
25+ 140.88 грн
100+ 112.62 грн
250+ 105.75 грн
500+ 92.53 грн
1000+ 75.41 грн
Мінімальне замовлення: 2
IVCR1401DR IVCR1401DR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR1407SR IVCR1407SR Inventchip IVCR1407%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+45.72 грн
6000+ 41.83 грн
Мінімальне замовлення: 3000
IVCR1407SR IVCR1407SR Inventchip IVCR1407%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 14623 шт:
термін постачання 21-31 дні (днів)
3+107.78 грн
10+ 92.79 грн
25+ 88.07 грн
100+ 67.88 грн
250+ 63.45 грн
500+ 56.08 грн
1000+ 43.54 грн
Мінімальне замовлення: 3
IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)
3+100.6 грн
10+ 86.91 грн
25+ 82.45 грн
100+ 63.56 грн
250+ 59.41 грн
500+ 52.5 грн
1000+ 40.77 грн
Мінімальне замовлення: 3
IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR2405DR IVCR2405DR Inventchip IVCR2405%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR2405DR IVCR2405DR Inventchip IVCR2405%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
2+216.28 грн
10+ 186.89 грн
25+ 176.69 грн
100+ 143.7 грн
250+ 136.32 грн
500+ 122.32 грн
1000+ 101.47 грн
Мінімальне замовлення: 2
IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Виробник: Inventchip
Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+275.2 грн
10+ 222.53 грн
100+ 180.04 грн
500+ 150.19 грн
1000+ 128.6 грн
Мінімальне замовлення: 2
IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Виробник: Inventchip
Description: DIODE SIC 650V 16.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
товар відсутній
IV1D12005O2 1599706780871299.pdf
IV1D12005O2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 17A TO220-2
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+402.39 грн
10+ 350.12 грн
100+ 289.91 грн
IV1D12010O2 1599706340406274.pdf
IV1D12010O2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 28A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+727.89 грн
10+ 600.67 грн
100+ 500.57 грн
IV1D12010T2 1599705049385290.pdf
IV1D12010T2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+727.89 грн
10+ 600.67 грн
100+ 500.57 грн
IV1D12015T2 1599706412830735.pdf
IV1D12015T2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+886.69 грн
10+ 752.13 грн
100+ 650.49 грн
IV1D12020T2 IV1D12020T2_V1.1_datasheet.pdf
IV1D12020T2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1264.65 грн
10+ 1073.12 грн
100+ 928.08 грн
IV1D12020T3 1599705521213647.pdf
IV1D12020T3
Виробник: Inventchip
Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1199.26 грн
10+ 1017.84 грн
100+ 880.28 грн
IV1D12030U3 IV1D12030U3_V1.1_datasheet.pdf
IV1D12030U3
Виробник: Inventchip
Description: SIC DIODE, 1200V 30A(15A/LEG), T
товар відсутній
IV1Q12050T3 1604555689872370.pdf
IV1Q12050T3
Виробник: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2693.84 грн
10+ 2392.44 грн
IV1Q12050T4 1604555720235348.pdf
IV1Q12050T4
Виробник: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
товар відсутній
IV1Q12160T4 1604555975325242.pdf
IV1Q12160T4
Виробник: Inventchip
Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1184.89 грн
10+ 1005.31 грн
100+ 869.47 грн
IVCR1401DPR IVCR1401-Datasheet.pdf
IVCR1401DPR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR1401DPR IVCR1401-Datasheet.pdf
IVCR1401DPR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3682 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+182.51 грн
10+ 158.11 грн
25+ 149.13 грн
100+ 119.25 грн
250+ 111.97 грн
500+ 97.98 грн
1000+ 79.85 грн
Мінімальне замовлення: 2
IVCR1401DR IVCR1401-Datasheet.pdf
IVCR1401DR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3756 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+172.45 грн
10+ 149.32 грн
25+ 140.88 грн
100+ 112.62 грн
250+ 105.75 грн
500+ 92.53 грн
1000+ 75.41 грн
Мінімальне замовлення: 2
IVCR1401DR IVCR1401-Datasheet.pdf
IVCR1401DR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR1407SR IVCR1407%20Datasheet.pdf
IVCR1407SR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+45.72 грн
6000+ 41.83 грн
Мінімальне замовлення: 3000
IVCR1407SR IVCR1407%20Datasheet.pdf
IVCR1407SR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 14623 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+107.78 грн
10+ 92.79 грн
25+ 88.07 грн
100+ 67.88 грн
250+ 63.45 грн
500+ 56.08 грн
1000+ 43.54 грн
Мінімальне замовлення: 3
IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+100.6 грн
10+ 86.91 грн
25+ 82.45 грн
100+ 63.56 грн
250+ 59.41 грн
500+ 52.5 грн
1000+ 40.77 грн
Мінімальне замовлення: 3
IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR2405DR IVCR2405%20Datasheet.pdf
IVCR2405DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IVCR2405DR IVCR2405%20Datasheet.pdf
IVCR2405DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+216.28 грн
10+ 186.89 грн
25+ 176.69 грн
100+ 143.7 грн
250+ 136.32 грн
500+ 122.32 грн
1000+ 101.47 грн
Мінімальне замовлення: 2