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IV1D06006O2 IV1D06006O2 Inventchip IV1D06006O2_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 17.4A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Current - Average Rectified (Io): 17.4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
2+311.82 грн
50+167.81 грн
100+154.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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IV1D06006P3 IV1D06006P3 Inventchip IV1D06006P3_V1.0_datasheet.pdf Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)
3+128.16 грн
10+78.60 грн
100+52.74 грн
500+39.11 грн
1000+35.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IV1D06020T2 IV1D06020T2 Inventchip Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 716pF @ 1V, 1MHz
Current - Average Rectified (Io): 50.1A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 204 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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IV1D12005O2 IV1D12005O2 Inventchip 1599706780871299.pdf Description: DIODE SIL CARB 1200V 17A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
2+182.85 грн
50+86.50 грн
100+77.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12010O2 IV1D12010O2 Inventchip 1599706340406274.pdf Description: DIODE SIL CARB 1200V 28A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
2+227.74 грн
50+109.37 грн
100+98.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12010T2 IV1D12010T2 Inventchip 1599705049385290.pdf Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
2+252.23 грн
30+132.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12015T2 IV1D12015T2 Inventchip 1599706412830735.pdf Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1007.29 грн
10+854.43 грн
100+738.96 грн
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IV1D12020T2 IV1D12020T2 Inventchip IV1D12020T2_V1.1_datasheet.pdf Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1436.65 грн
10+1219.08 грн
100+1054.31 грн
В кошику  од. на суму  грн.
IV1D12020T3 IV1D12020T3 Inventchip 1599705521213647.pdf Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1362.37 грн
10+1156.27 грн
100+1000.01 грн
В кошику  од. на суму  грн.
IV1D12030U3 IV1D12030U3 Inventchip IV1D12030U3_V1.1_datasheet.pdf Description: SIC DIODE, 1200V 30A(15A/LEG), T
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IV1Q12050T3 IV1Q12050T3 Inventchip 1604555689872370.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+3060.23 грн
10+2717.83 грн
В кошику  од. на суму  грн.
IV1Q12050T4 IV1Q12050T4 Inventchip 1604555720235348.pdf Description: SIC MOSFET, 1200V 50MOHM, TO-247
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IV1Q12160T4 IV1Q12160T4 Inventchip 1604555975325242.pdf Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
1+1346.04 грн
10+1142.05 грн
100+987.72 грн
В кошику  од. на суму  грн.
IV1Q12750O3 IV1Q12750O3 Inventchip Description: SIC MOSFET, 1200V 750MOHM, TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 66.9W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV1Q12750T3 IV1Q12750T3 Inventchip Description: SIC MOSFET, 1200V 750MOHM, TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 78.4W (Tc)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV2Q12160T4Z IV2Q12160T4Z Inventchip IV2Q12160T4Z.pdf Description: GEN2, SIC MOSFET, 1200V 160MOHM,
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
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IVCC1104EDR IVCC1104EDR Inventchip Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCC1104EDR IVCC1104EDR Inventchip Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCR1401DPR IVCR1401DPR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DPR IVCR1401DPR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3647 шт:
термін постачання 21-31 дні (днів)
2+275.90 грн
10+174.42 грн
25+150.48 грн
100+116.02 грн
250+103.77 грн
500+96.29 грн
1000+88.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR1401DR IVCR1401DR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DR IVCR1401DR Inventchip IVCR1401-Datasheet.pdf Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3736 шт:
термін постачання 21-31 дні (днів)
2+264.47 грн
10+166.80 грн
25+143.78 грн
100+110.66 грн
250+98.85 грн
500+91.65 грн
1000+84.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR1407SR IVCR1407SR Inventchip IVCR1407%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+42.68 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IVCR1407SR IVCR1407SR Inventchip IVCR1407%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5506 шт:
термін постачання 21-31 дні (днів)
2+166.52 грн
10+102.26 грн
25+87.19 грн
100+65.80 грн
250+58.00 грн
500+53.23 грн
1000+48.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR2401DPR IVCR2401DPR Inventchip IVCR2401-Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3775 шт:
термін постачання 21-31 дні (днів)
9+37.55 грн
13+25.23 грн
25+22.54 грн
100+18.41 грн
250+17.09 грн
500+16.30 грн
1000+15.39 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IVCR2405DR IVCR2405DR Inventchip IVCR2405%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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IVCR2405DR IVCR2405DR Inventchip IVCR2405%20Datasheet.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3977 шт:
термін постачання 21-31 дні (днів)
10+35.10 грн
14+23.82 грн
25+21.25 грн
100+17.34 грн
250+16.08 грн
500+15.33 грн
1000+14.47 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IVCR2504DR IVCR2504DR Inventchip IVCR2504.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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IVCR2504DR IVCR2504DR Inventchip IVCR2504.pdf Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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IV1D06006O2 IV1D06006O2_V1.0_datasheet.pdf
IV1D06006O2
Виробник: Inventchip
Description: DIODE SIL CARB 650V 17.4A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Current - Average Rectified (Io): 17.4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+311.82 грн
50+167.81 грн
100+154.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Виробник: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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IV1D06006P3 IV1D06006P3_V1.0_datasheet.pdf
IV1D06006P3
Виробник: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.16 грн
10+78.60 грн
100+52.74 грн
500+39.11 грн
1000+35.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IV1D06020T2
IV1D06020T2
Виробник: Inventchip
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 716pF @ 1V, 1MHz
Current - Average Rectified (Io): 50.1A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 204 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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IV1D12005O2 1599706780871299.pdf
IV1D12005O2
Виробник: Inventchip
Description: DIODE SIL CARB 1200V 17A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.85 грн
50+86.50 грн
100+77.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12010O2 1599706340406274.pdf
IV1D12010O2
Виробник: Inventchip
Description: DIODE SIL CARB 1200V 28A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+227.74 грн
50+109.37 грн
100+98.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12010T2 1599705049385290.pdf
IV1D12010T2
Виробник: Inventchip
Description: DIODE SIL CARB 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+252.23 грн
30+132.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IV1D12015T2 1599706412830735.pdf
IV1D12015T2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 44A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1007.29 грн
10+854.43 грн
100+738.96 грн
В кошику  од. на суму  грн.
IV1D12020T2 IV1D12020T2_V1.1_datasheet.pdf
IV1D12020T2
Виробник: Inventchip
Description: DIODE SIL CARB 1.2KV 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1114pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1436.65 грн
10+1219.08 грн
100+1054.31 грн
В кошику  од. на суму  грн.
IV1D12020T3 1599705521213647.pdf
IV1D12020T3
Виробник: Inventchip
Description: SIC DIODE, 1200V 20A(10A/LEG), T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1362.37 грн
10+1156.27 грн
100+1000.01 грн
В кошику  од. на суму  грн.
IV1D12030U3 IV1D12030U3_V1.1_datasheet.pdf
IV1D12030U3
Виробник: Inventchip
Description: SIC DIODE, 1200V 30A(15A/LEG), T
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IV1Q12050T3 1604555689872370.pdf
IV1Q12050T3
Виробник: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3060.23 грн
10+2717.83 грн
В кошику  од. на суму  грн.
IV1Q12050T4 1604555720235348.pdf
IV1Q12050T4
Виробник: Inventchip
Description: SIC MOSFET, 1200V 50MOHM, TO-247
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IV1Q12160T4 1604555975325242.pdf
IV1Q12160T4
Виробник: Inventchip
Description: SIC MOSFET, 1200V 160MOHM, TO-24
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1346.04 грн
10+1142.05 грн
100+987.72 грн
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IV1Q12750O3
IV1Q12750O3
Виробник: Inventchip
Description: SIC MOSFET, 1200V 750MOHM, TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 66.9W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV1Q12750T3
IV1Q12750T3
Виробник: Inventchip
Description: SIC MOSFET, 1200V 750MOHM, TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 20V
Power Dissipation (Max): 78.4W (Tc)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 800 V
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IV2Q12160T4Z IV2Q12160T4Z.pdf
IV2Q12160T4Z
Виробник: Inventchip
Description: GEN2, SIC MOSFET, 1200V 160MOHM,
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
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IVCC1104EDR
IVCC1104EDR
Виробник: Inventchip
Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCC1104EDR
IVCC1104EDR
Виробник: Inventchip
Description: CCM TOTEM-POLE PFC CONTROLLERS
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 16-SOIC
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IVCR1401DPR IVCR1401-Datasheet.pdf
IVCR1401DPR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DPR IVCR1401-Datasheet.pdf
IVCR1401DPR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+275.90 грн
10+174.42 грн
25+150.48 грн
100+116.02 грн
250+103.77 грн
500+96.29 грн
1000+88.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR1401DR IVCR1401-Datasheet.pdf
IVCR1401DR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IVCR1401DR IVCR1401-Datasheet.pdf
IVCR1401DR
Виробник: Inventchip
Description: SIC MOSFET AND IGBT DRIVER, 4A,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 19V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.47 грн
10+166.80 грн
25+143.78 грн
100+110.66 грн
250+98.85 грн
500+91.65 грн
1000+84.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR1407SR IVCR1407%20Datasheet.pdf
IVCR1407SR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+42.68 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IVCR1407SR IVCR1407%20Datasheet.pdf
IVCR1407SR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5506 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.52 грн
10+102.26 грн
25+87.19 грн
100+65.80 грн
250+58.00 грн
500+53.23 грн
1000+48.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IVCR2401DPR IVCR2401-Datasheet.pdf
IVCR2401DPR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 25V 4A S
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 13ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.7V, 1.6V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3775 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.55 грн
13+25.23 грн
25+22.54 грн
100+18.41 грн
250+17.09 грн
500+16.30 грн
1000+15.39 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IVCR2405DR IVCR2405%20Datasheet.pdf
IVCR2405DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IVCR2405DR IVCR2405%20Datasheet.pdf
IVCR2405DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3977 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.10 грн
14+23.82 грн
25+21.25 грн
100+17.34 грн
250+16.08 грн
500+15.33 грн
1000+14.47 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IVCR2504DR IVCR2504.pdf
IVCR2504DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IVCR2504DR IVCR2504.pdf
IVCR2504DR
Виробник: Inventchip
Description: GENERAL PURPOSE DRIVER, 24V, 4A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.