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APT6021BLLG APT6021BLLG Microchip Technology 6405-apt6021bllg-apt6021sllg-datasheet Description: MOSFET N-CH 600V 29A TO247
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APT6029BFLLG APT6029BFLLG Microchip Technology 6412-apt6029bfllg-apt6029sfllg-datasheet Description: MOSFET N-CH 600V 21A TO-247
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APT6029BLLG APT6029BLLG Microchip Technology 6413-apt6029bllg-apt6029sllg-datasheet Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
1+1001.37 грн
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APT6038BFLLG APT6038BFLLG Microchip Technology 6419-apt6038bfllg-apt6038sfllg-datasheet Description: MOSFET N-CH 600V 17A TO-247
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APT6038BLLG APT6038BLLG Microchip Technology 6420-apt6038bllg-apt6038sllg-datasheet Description: MOSFET N-CH 600V 17A TO-247
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APT60D100BG APT60D100BG Microchip Technology 6423-apt60d100bg-apt60d100sg-datasheet Description: DIODE STD 1000V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
1+434.68 грн
100+339.48 грн
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APT60D100LCTG APT60D100LCTG Microchip Technology 6424-apt60d100lctg-datasheet Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT60D100SG APT60D100SG Microchip Technology 6423-apt60d100bg-apt60d100sg-datasheet Description: DIODE GEN PURP 1KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT60D120BG APT60D120BG Microchip Technology 6425-apt60d120bg-apt60d120sg-datasheet Description: DIODE STD 1200V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
2+294.61 грн
100+229.11 грн
Мінімальне замовлення: 2
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APT60D120SG APT60D120SG Microchip Technology 6425-apt60d120bg-apt60d120sg-datasheet Description: DIODE GEN PURP 1.2KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT60D20BG APT60D20BG Microchip Technology 6426-apt60d20bg-apt60d20sg-datasheet Description: DIODE GP 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT60D40BG APT60D40BG Microchip Technology 6430-apt60d40bg-apt60d40sg-datasheet Description: DIODE GP 400V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
2+252.76 грн
100+197.24 грн
Мінімальне замовлення: 2
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APT60D40LCTG APT60D40LCTG Microchip Technology 6431-apt60d40lctg-datasheet Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT60D60BG APT60D60BG Microchip Technology 123919-apt60d60bg-apt60d60sg-datasheet Description: DIODE STD 600V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 1374 шт:
термін постачання 21-31 дні (днів)
2+232.63 грн
100+181.45 грн
Мінімальне замовлення: 2
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APT60D60LCTG APT60D60LCTG Microchip Technology 7183-apt60d60lctg-datasheet Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+668.92 грн
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APT60DQ100BG APT60DQ100BG Microchip Technology 123788-apt60dq100b-s-g-b-pdf Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT60DQ100LCTG APT60DQ100LCTG Microchip Technology 123692-apt60dq100lctg-datasheet Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT60DQ60BCTG APT60DQ60BCTG Microchip Technology 6436-apt60dq60bctg-datasheet Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 2080 шт:
термін постачання 21-31 дні (днів)
2+286.56 грн
100+230.85 грн
Мінімальне замовлення: 2
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APT60GF120JRDQ3 APT60GF120JRDQ3 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+8172.73 грн
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APT60GT60BRG APT60GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
на замовлення 1936 шт:
термін постачання 21-31 дні (днів)
1+1179.26 грн
10+802.04 грн
25+714.19 грн
100+576.41 грн
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APT60M60JFLL APT60M60JFLL Microchip Technology APT60M60JFLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+7403.19 грн
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APT60M60JLL APT60M60JLL Microchip Technology APT60M60JLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+7259.10 грн
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APT60M75JFLL APT60M75JFLL Microchip Technology 6442-apt60m75jfll-datasheet Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JLL APT60M75JLL Microchip Technology 6443-apt60m75jll-datasheet Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JVR APT60M75JVR Microchip Technology 6445-apt60m75jvr-datasheet Description: MOSFET N-CH 600V 62A ISOTOP
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APT60M75L2FLLG APT60M75L2FLLG Microchip Technology 6446-apt60m75l2fllg-datasheet Description: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)
1+3879.89 грн
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APT60M75L2LLG APT60M75L2LLG Microchip Technology 6447-apt60m75l2llg-datasheet Description: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+3879.89 грн
100+3032.28 грн
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APT60N60BCSG APT60N60BCSG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
1+1428.80 грн
100+1117.59 грн
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APT60S20B2CTG APT60S20B2CTG Microchip Technology 7212-apt60s20b2ctg-datasheet Description: DIODE ARRAY SCHOTT 200V 75A TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: T-MAX™ [B2]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
1+614.18 грн
100+478.62 грн
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APT60S20BG APT60S20BG Microchip Technology 7211-apt60s20bg-apt60s20sg-datasheet Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)
2+273.69 грн
100+214.68 грн
Мінімальне замовлення: 2
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APT60S20SG APT60S20SG Microchip Technology 7211-apt60s20bg-apt60s20sg-datasheet Description: DIODE SCHOTTKY 200V 75A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+401.67 грн
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APT65GP60B2G APT65GP60B2G Microchip Technology 6462-apt65gp60b2g-datasheet Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/91ns
Switching Energy: 605µJ (on), 896µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
1+1344.28 грн
100+863.71 грн
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APT65GP60J APT65GP60J Microchip Technology 6463-apt65gp60j-a-datasheet Description: IGBT MOD 600V 130A 431W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
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APT65GP60L2DQ2G APT65GP60L2DQ2G Microchip Technology 6465-apt65gp60l2dq2g-datasheet Description: IGBT PT 600V 198A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 605µJ (on), 895µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 198 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+1586.57 грн
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APT66M60B2 APT66M60B2 Microchip Technology 7226-apt66m60b2-apt66m60l-datasheet Description: MOSFET N-CH 600V 70A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT66M60L APT66M60L Microchip Technology 7226-apt66m60b2-apt66m60l-datasheet Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT75DQ100BG APT75DQ100BG Microchip Technology APT75DQ100.pdf Description: DIODE GEN PURP 1KV 75A TO247
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APT75DQ120BG APT75DQ120BG Microchip Technology 123690-apt75dq120bg-apt75dq120sg-datasheet Description: DIODE STD 1200V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 2789 шт:
термін постачання 21-31 дні (днів)
2+220.56 грн
100+172.08 грн
Мінімальне замовлення: 2
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APT75DQ60BG APT75DQ60BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE STD 600V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 22899 шт:
термін постачання 21-31 дні (днів)
2+211.70 грн
100+165.11 грн
Мінімальне замовлення: 2
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APT75GN120B2G APT75GN120B2G Microchip Technology 6469-apt75gn120b2g-apt75gn120lg-datasheet Description: IGBT 1200V 200A 833W TMAX
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APT75GN120LG APT75GN120LG Microchip Technology 6469-apt75gn120b2g-apt75gn120lg-datasheet Description: IGBT TRENCH FS 1200V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/620ns
Switching Energy: 8620µJ (on), 11400µJ (off)
Test Condition: 800V, 75A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 833 W
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
1+1204.22 грн
100+941.60 грн
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APT75GN60BG APT75GN60BG Microchip Technology 6470-apt75gn60bg-datasheet Description: IGBT TRENCH FS 600V 155A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2500µJ (on), 2140µJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
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APT75GP120B2G APT75GP120B2G Microchip Technology 6472-apt75gp120b2g-datasheet Description: IGBT PT 1200V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/163ns
Switching Energy: 1620µJ (on), 2500µJ (off)
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 320 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 1042 W
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+1955.24 грн
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APT75GP120J APT75GP120J Microchip Technology 6473-apt75gp120j-datasheet Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+3104.72 грн
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APT75GP120JDQ3 APT75GP120JDQ3 Microchip Technology 6474-apt75gp120jdq3-datasheet Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
1+3337.35 грн
100+2608.47 грн
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APT75GT120JRDQ3 APT75GT120JRDQ3 Microchip Technology 7248-apt75gt120jrdq3-datasheet Description: IGBT MOD 1200V 97A 480W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 97 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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APT75M50B2 APT75M50B2 Microchip Technology 7254-apt75m50b2-apt75m50l-datasheet Description: MOSFET N-CH 500V 75A T-MAX
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APT75M50L APT75M50L Microchip Technology 7254-apt75m50b2-apt75m50l-datasheet Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+1103.60 грн
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APT77N60JC3 APT77N60JC3 Microchip Technology 7257-apt77n60jc3-datasheet Description: MOSFET N-CH 600V 77A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+2843.11 грн
100+2222.30 грн
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APT7F100B APT7F100B Microchip Technology 7259-apt7f100b-apt7f100s-datasheet Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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APT7M120B APT7M120B Microchip Technology 7267-apt7m120b-apt7m120s-datasheet Description: MOSFET N-CH 1200V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+399.26 грн
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APT8014JLL APT8014JLL Microchip Technology APT8014JLL.pdf Description: MOSFET N-CH 800V 42A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 21A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
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APT8020B2FLLG APT8020B2FLLG Microchip Technology 7273-apt8020b2fllg-apt8020lfllg-datasheet Description: MOSFET N-CH 800V 38A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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APT8020B2LLG APT8020B2LLG Microchip Technology 7274-apt8020b2llg-apt8020lllg-datasheet Description: MOSFET N-CH 800V 38A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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APT8020JFLL APT8020JFLL Microchip Technology 7275-apt8020jfll-datasheet Description: MOSFET N-CH 800V 33A ISOTOP
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APT8020JLL APT8020JLL Microchip Technology 6486-apt8020jll-datasheet Description: MOSFET N-CH 800V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+3816.30 грн
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APT8020LFLLG APT8020LFLLG Microchip Technology 7273-apt8020b2fllg-apt8020lfllg-datasheet Description: MOSFET N-CH 800V 38A TO264
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APT8024JLL APT8024JLL Microchip Technology 6488-apt8024jll-datasheet Description: MOSFET N-CH 800V 29A ISOTOP
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APT8024LFLLG APT8024LFLLG Microchip Technology 7276-apt8024b2fllg-apt8024lfllg-datasheet Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
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APT8052BLLG APT8052BLLG Microchip Technology 6499-apt8052bllg-apt8052sllg-datasheet Description: MOSFET N-CH 800V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
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APT6021BLLG 6405-apt6021bllg-apt6021sllg-datasheet
APT6021BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 29A TO247
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APT6029BFLLG 6412-apt6029bfllg-apt6029sfllg-datasheet
APT6029BFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 21A TO-247
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APT6029BLLG 6413-apt6029bllg-apt6029sllg-datasheet
APT6029BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1001.37 грн
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APT6038BFLLG 6419-apt6038bfllg-apt6038sfllg-datasheet
APT6038BFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 17A TO-247
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APT6038BLLG 6420-apt6038bllg-apt6038sllg-datasheet
APT6038BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 17A TO-247
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APT60D100BG 6423-apt60d100bg-apt60d100sg-datasheet
APT60D100BG
Виробник: Microchip Technology
Description: DIODE STD 1000V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+434.68 грн
100+339.48 грн
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APT60D100LCTG 6424-apt60d100lctg-datasheet
APT60D100LCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT60D100SG 6423-apt60d100bg-apt60d100sg-datasheet
APT60D100SG
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT60D120BG 6425-apt60d120bg-apt60d120sg-datasheet
APT60D120BG
Виробник: Microchip Technology
Description: DIODE STD 1200V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+294.61 грн
100+229.11 грн
Мінімальне замовлення: 2
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APT60D120SG 6425-apt60d120bg-apt60d120sg-datasheet
APT60D120SG
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT60D20BG 6426-apt60d20bg-apt60d20sg-datasheet
APT60D20BG
Виробник: Microchip Technology
Description: DIODE GP 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT60D40BG 6430-apt60d40bg-apt60d40sg-datasheet
APT60D40BG
Виробник: Microchip Technology
Description: DIODE GP 400V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+252.76 грн
100+197.24 грн
Мінімальне замовлення: 2
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APT60D40LCTG 6431-apt60d40lctg-datasheet
APT60D40LCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT60D60BG 123919-apt60d60bg-apt60d60sg-datasheet
APT60D60BG
Виробник: Microchip Technology
Description: DIODE STD 600V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 1374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.63 грн
100+181.45 грн
Мінімальне замовлення: 2
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APT60D60LCTG 7183-apt60d60lctg-datasheet
APT60D60LCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+668.92 грн
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APT60DQ100BG 123788-apt60dq100b-s-g-b-pdf
APT60DQ100BG
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT60DQ100LCTG 123692-apt60dq100lctg-datasheet
APT60DQ100LCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT60DQ60BCTG 6436-apt60dq60bctg-datasheet
APT60DQ60BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 2080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+286.56 грн
100+230.85 грн
Мінімальне замовлення: 2
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APT60GF120JRDQ3 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60GF120JRDQ3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8172.73 грн
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APT60GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60GT60BRG
Виробник: Microchip Technology
Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
на замовлення 1936 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1179.26 грн
10+802.04 грн
25+714.19 грн
100+576.41 грн
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APT60M60JFLL APT60M60JFLL.pdf
APT60M60JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7403.19 грн
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APT60M60JLL APT60M60JLL.pdf
APT60M60JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7259.10 грн
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APT60M75JFLL 6442-apt60m75jfll-datasheet
APT60M75JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JLL 6443-apt60m75jll-datasheet
APT60M75JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JVR 6445-apt60m75jvr-datasheet
APT60M75JVR
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 62A ISOTOP
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APT60M75L2FLLG 6446-apt60m75l2fllg-datasheet
APT60M75L2FLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3879.89 грн
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APT60M75L2LLG 6447-apt60m75l2llg-datasheet
APT60M75L2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3879.89 грн
100+3032.28 грн
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APT60N60BCSG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60N60BCSG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1428.80 грн
100+1117.59 грн
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APT60S20B2CTG 7212-apt60s20b2ctg-datasheet
APT60S20B2CTG
Виробник: Microchip Technology
Description: DIODE ARRAY SCHOTT 200V 75A TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: T-MAX™ [B2]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+614.18 грн
100+478.62 грн
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APT60S20BG 7211-apt60s20bg-apt60s20sg-datasheet
APT60S20BG
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+273.69 грн
100+214.68 грн
Мінімальне замовлення: 2
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APT60S20SG 7211-apt60s20bg-apt60s20sg-datasheet
APT60S20SG
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.67 грн
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APT65GP60B2G 6462-apt65gp60b2g-datasheet
APT65GP60B2G
Виробник: Microchip Technology
Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/91ns
Switching Energy: 605µJ (on), 896µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1344.28 грн
100+863.71 грн
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APT65GP60J 6463-apt65gp60j-a-datasheet
APT65GP60J
Виробник: Microchip Technology
Description: IGBT MOD 600V 130A 431W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
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APT65GP60L2DQ2G 6465-apt65gp60l2dq2g-datasheet
APT65GP60L2DQ2G
Виробник: Microchip Technology
Description: IGBT PT 600V 198A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 605µJ (on), 895µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 198 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1586.57 грн
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APT66M60B2 7226-apt66m60b2-apt66m60l-datasheet
APT66M60B2
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT66M60L 7226-apt66m60b2-apt66m60l-datasheet
APT66M60L
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT75DQ100BG APT75DQ100.pdf
APT75DQ100BG
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 75A TO247
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APT75DQ120BG 123690-apt75dq120bg-apt75dq120sg-datasheet
APT75DQ120BG
Виробник: Microchip Technology
Description: DIODE STD 1200V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 2789 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+220.56 грн
100+172.08 грн
Мінімальне замовлення: 2
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APT75DQ60BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT75DQ60BG
Виробник: Microchip Technology
Description: DIODE STD 600V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 22899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.70 грн
100+165.11 грн
Мінімальне замовлення: 2
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APT75GN120B2G 6469-apt75gn120b2g-apt75gn120lg-datasheet
APT75GN120B2G
Виробник: Microchip Technology
Description: IGBT 1200V 200A 833W TMAX
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APT75GN120LG 6469-apt75gn120b2g-apt75gn120lg-datasheet
APT75GN120LG
Виробник: Microchip Technology
Description: IGBT TRENCH FS 1200V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/620ns
Switching Energy: 8620µJ (on), 11400µJ (off)
Test Condition: 800V, 75A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 833 W
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1204.22 грн
100+941.60 грн
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APT75GN60BG 6470-apt75gn60bg-datasheet
APT75GN60BG
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 155A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2500µJ (on), 2140µJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
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APT75GP120B2G 6472-apt75gp120b2g-datasheet
APT75GP120B2G
Виробник: Microchip Technology
Description: IGBT PT 1200V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/163ns
Switching Energy: 1620µJ (on), 2500µJ (off)
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 320 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 1042 W
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1955.24 грн
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APT75GP120J 6473-apt75gp120j-datasheet
APT75GP120J
Виробник: Microchip Technology
Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3104.72 грн
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APT75GP120JDQ3 6474-apt75gp120jdq3-datasheet
APT75GP120JDQ3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3337.35 грн
100+2608.47 грн
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APT75GT120JRDQ3 7248-apt75gt120jrdq3-datasheet
APT75GT120JRDQ3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 97A 480W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 97 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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APT75M50B2 7254-apt75m50b2-apt75m50l-datasheet
APT75M50B2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A T-MAX
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APT75M50L 7254-apt75m50b2-apt75m50l-datasheet
APT75M50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1103.60 грн
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APT77N60JC3 7257-apt77n60jc3-datasheet
APT77N60JC3
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 77A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2843.11 грн
100+2222.30 грн
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APT7F100B 7259-apt7f100b-apt7f100s-datasheet
APT7F100B
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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APT7M120B 7267-apt7m120b-apt7m120s-datasheet
APT7M120B
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+399.26 грн
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APT8014JLL APT8014JLL.pdf
APT8014JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 42A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 21A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
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APT8020B2FLLG 7273-apt8020b2fllg-apt8020lfllg-datasheet
APT8020B2FLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 38A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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APT8020B2LLG 7274-apt8020b2llg-apt8020lllg-datasheet
APT8020B2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 38A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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APT8020JFLL 7275-apt8020jfll-datasheet
APT8020JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 33A ISOTOP
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APT8020JLL 6486-apt8020jll-datasheet
APT8020JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3816.30 грн
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APT8020LFLLG 7273-apt8020b2fllg-apt8020lfllg-datasheet
APT8020LFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 38A TO264
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APT8024JLL 6488-apt8024jll-datasheet
APT8024JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 29A ISOTOP
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APT8024LFLLG 7276-apt8024b2fllg-apt8024lfllg-datasheet
APT8024LFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
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APT8052BLLG 6499-apt8052bllg-apt8052sllg-datasheet
APT8052BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
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