Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SZMM3Z3V3T1GX | NEXPERIA |
![]() Description: Diode: Zener; 300mW; 3.3V; SMD; SOD323; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Application: automotive industry Max. forward voltage: 1.1V Leakage current: 5µA |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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MM3Z3V3T1GX | NEXPERIA |
![]() Description: Diode: Zener Type of diode: Zener |
на замовлення 39000 шт: термін постачання 21-30 дні (днів) |
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PUMH9-QX | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 3745 шт: термін постачання 21-30 дні (днів) |
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PUMH9-QH | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PUMH9-QZ | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PUMH9,135 | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PUMH9,125 | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; 50V; 100mA; SC88,SOT363,TSSOP6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Base resistor: 10kΩ Base-emitter resistor: 47kΩ Semiconductor structure: double Frequency: 230MHz |
на замовлення 21000 шт: термін постачання 21-30 дні (днів) |
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PUMH9-QF | NEXPERIA |
![]() Description: Transistor: NPN x2 Type of transistor: NPN x2 |
на замовлення 90000 шт: термін постачання 21-30 дні (днів) |
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74LVC1G386GW,125 | NEXPERIA |
![]() Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SC88 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Manufacturer series: Mini Logic |
на замовлення 727 шт: термін постачання 21-30 дні (днів) |
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HEF4030BT,653 | NEXPERIA |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C Kind of package: reel; tape Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Mounting: SMD Number of channels: quad; 4 Kind of gate: XOR Operating temperature: -40...125°C Quiescent current: 30µA Number of inputs: 2 Supply voltage: 3...15V DC Case: SO14 |
на замовлення 1388 шт: термін постачання 21-30 дні (днів) |
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74AUP1G386GS,132 | NEXPERIA |
![]() Description: IC: digital; XOR; IN: 3; CMOS; SMD; XSON6; Mini Logic; 800mVDC÷3.6VDC Type of integrated circuit: digital Kind of gate: XOR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XSON6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AUP1G386GM,115 | NEXPERIA |
![]() Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XSON6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AUP1G386GW,125 | NEXPERIA |
![]() Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LVC1G386GV,125 | NEXPERIA |
![]() Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC74A; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SC74A Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
74AUP1G58GM,115 | NEXPERIA |
![]() Description: IC: digital; Schmitt trigger; Ch: 1; IN: 3; CMOS; SMD; XSON6; AUP Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XSON6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger Kind of integrated circuit: Schmitt trigger Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AUP1G58GW,125 | NEXPERIA |
![]() Description: IC: digital; Schmitt trigger; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; AUP Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger Kind of integrated circuit: Schmitt trigger Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AUP2G58GUX | NEXPERIA |
![]() Description: IC: digital; Schmitt trigger; Ch: 2; IN: 3; CMOS; SMD; XQFN10; AUP Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of channels: 2 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XQFN10 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger Kind of integrated circuit: Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AUP1T58GM,115 | NEXPERIA |
![]() Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Type of integrated circuit: digital Kind of gate: AND; configurable; NAND; NOR; OR; XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XSON6 Supply voltage: 2.3...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AUP1T58GW,125 | NEXPERIA |
![]() Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Type of integrated circuit: digital Kind of gate: AND; configurable; NAND; NOR; OR; XOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP6 Supply voltage: 2.3...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BCV61,215 | NEXPERIA |
![]() Description: Transistor: NPN x2 Type of transistor: NPN x2 |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BC846B-QVL | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 65V; 100mA; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 200 Mounting: SMD Frequency: 100MHz Application: automotive industry |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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PBRP123YT,215 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; BRT; 40V; 0.6A; 370mW; SOT23,TO236AB Type of transistor: PNP Kind of transistor: BRT Mounting: SMD Case: SOT23; TO236AB Power dissipation: 0.37W Collector current: 0.6A Collector-emitter voltage: 40V Current gain: 190...320 Base resistor: 2.2kΩ Kind of package: 7 inch reel; tape Base-emitter resistor: 10kΩ Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PBRP123YT-QR | NEXPERIA |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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BZX79-C12,143 | NEXPERIA |
![]() Description: Diode: Zener; 0.4/0.5W; 12V; Ammo Pack; DO35; single diode; 250mA Kind of package: Ammo Pack Case: DO35 Semiconductor structure: single diode Mounting: THT Type of diode: Zener Max. load current: 0.25A Power dissipation: 0.4/0.5W Max. forward voltage: 0.9V Tolerance: ±5% Zener voltage: 12V |
на замовлення 3318 шт: термін постачання 21-30 дні (днів) |
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BZV85-C4V7,113 | NEXPERIA |
![]() Description: Diode: Zener; 1/1.3W; 4.7V; reel,tape; DO41; single diode; 500mA Type of diode: Zener Power dissipation: 1/1.3W Zener voltage: 4.7V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.5A Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NX7002BKWX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Pulsed drain current: 0.8A Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.7Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3027 шт: термін постачання 21-30 дні (днів) |
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NX7002BKSX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Pulsed drain current: 0.8A Case: SC88; SOT363; TSSOP6 On-state resistance: 5.7Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Features of semiconductor devices: logic level |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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NX7002BKMBYL | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.9A Power dissipation: 0.68W Case: DFN1006B-3; SOT883B Gate-source voltage: ±20V On-state resistance: 5.7Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 5801 шт: термін постачання 21-30 дні (днів) |
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NX7002BKMYL | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.9A Power dissipation: 0.35W Case: DFN1006-3; SOT883 Gate-source voltage: ±20V On-state resistance: 5.7Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PESD5V0S1BLD,315 | NEXPERIA |
![]() Description: Diode: TVS; 130W; 5.5V; 12A; bidirectional; DFN1006-2; automotive Type of diode: TVS Peak pulse power dissipation: 130W Max. off-state voltage: 5V Breakdown voltage: 5.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Application: automotive Version: ESD Operating temperature: -55...150°C Capacitance: 35pF Number of channels: 1 |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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PESD5V0L1ULD,315 | NEXPERIA |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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PESD5V0S1ULD,315 | NEXPERIA |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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PESD15VS1ULD,315 | NEXPERIA |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 60000 шт: термін постачання 21-30 дні (днів) |
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PMEG2005BELD,315 | NEXPERIA |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 140000 шт: термін постачання 21-30 дні (днів) |
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BUK9K32-100EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 19A; Idm: 106A; 64W Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Gate charge: 27.3nC On-state resistance: 91mΩ Application: automotive industry Gate-source voltage: ±10V Drain current: 19A Power dissipation: 64W Drain-source voltage: 100V Pulsed drain current: 106A Type of transistor: N-MOSFET x2 Case: LFPAK33; SOT1210 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PSMN6R1-25MLDX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 235A Power dissipation: 42W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 8.98mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BUK7K45-100EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 84A Power dissipation: 53W Case: LFPAK56D; SOT1205 On-state resistance: 0.104Ω Mounting: SMD Gate charge: 25.9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZV49-C18,115 | NEXPERIA |
![]() Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOT89; Ifmax: 250mA Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Kind of package: reel; tape Case: SOT89 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 1V |
на замовлення 717 шт: термін постачання 21-30 дні (днів) |
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BAT54J-QX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 30V; 0.2A; 550mW Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.55W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PRTR5V0U2X,215 | NEXPERIA |
![]() Description: Diode: TVS array; 7.5V; unidirectional; SOT143B Type of diode: TVS array Breakdown voltage: 7.5V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA |
на замовлення 4129 шт: термін постачання 21-30 дні (днів) |
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PRTR5V0U2F,115 | NEXPERIA |
![]() Description: Diode: TVS array; 6÷9V; unidirectional; SOT886 Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT886 Max. off-state voltage: 5.5V Leakage current: 0.1µA |
на замовлення 3338 шт: термін постачання 21-30 дні (днів) |
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PRTR5V0U2AX,215 | NEXPERIA |
![]() Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA |
на замовлення 627 шт: термін постачання 21-30 дні (днів) |
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PESD18VF1BLYL | NEXPERIA |
![]() Description: Diode: TVS; 19÷24V; 1A; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Max. off-state voltage: 18V Breakdown voltage: 19...24V Max. forward impulse current: 1A Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 30nA Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BZX84-C6V8.215 | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 6.8V; SMD; reel,tape; SOT23; Ifmax: 200mA Semiconductor structure: single diode Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of diode: Zener Max. load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 0.9V Tolerance: ±5% Zener voltage: 6.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BZX84-C6V8-QVL | NEXPERIA |
![]() Description: Diode: Zener Type of diode: Zener |
на замовлення 140000 шт: термін постачання 21-30 дні (днів) |
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BUK9Y19-55B,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 46A; Idm: 184A; 85W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Application: automotive industry Kind of package: reel; tape Gate charge: 18nC On-state resistance: 17.3mΩ Gate-source voltage: ±15V Power dissipation: 85W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 184A Drain current: 46A Drain-source voltage: 55V |
на замовлення 991 шт: термін постачання 21-30 дні (днів) |
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BUK6Y14-40PX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Application: automotive industry Kind of package: reel; tape Gate charge: 64nC On-state resistance: 25mΩ Gate-source voltage: ±20V Power dissipation: 110W Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -257A Drain current: -46A Drain-source voltage: -40V |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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PSMN4R0-30YLDX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Kind of package: reel; tape Gate charge: 9.1nC On-state resistance: 4.4mΩ Gate-source voltage: ±20V Power dissipation: 64W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 378A Drain current: 95A Drain-source voltage: 30V |
на замовлення 692 шт: термін постачання 21-30 дні (днів) |
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BUK9Y19-75B,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Application: automotive industry Kind of package: reel; tape Gate charge: 30nC On-state resistance: 48mΩ Gate-source voltage: ±15V Power dissipation: 106W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 192A Drain current: 34.1A Drain-source voltage: 75V |
на замовлення 931 шт: термін постачання 21-30 дні (днів) |
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BZX84-C5V6-QR | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Case: SOT23 Max. load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 0.9V Tolerance: ±5% Application: automotive industry Zener voltage: 5.6V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PMBT2369,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 500MHz |
на замовлення 3458 шт: термін постачання 21-30 дні (днів) |
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PMBT5550,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.3A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Application: automotive industry Current gain: 250 Frequency: 300MHz |
на замовлення 5259 шт: термін постачання 21-30 дні (днів) |
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PMBT3946YPN,115 | NEXPERIA |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 60/40V Collector current: 0.2A Power dissipation: 0.35W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Kind of transistor: complementary pair Current gain: 30...300 Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PMBT2222AQAZ | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 940mW; DFN1010D-3,SOT1215 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.94W Case: DFN1010D-3; SOT1215 Pulsed collector current: 0.8A Mounting: SMD Kind of package: reel; tape Current gain: 100...300 Frequency: 340MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PMBT2907AQAZ | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 940mW; DFN1010D-3,SOT1215 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.94W Case: DFN1010D-3; SOT1215 Mounting: SMD Kind of package: reel; tape Application: automotive industry Current gain: 50...300 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PMBT3946VPN,115 | NEXPERIA |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 60/40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT666 Mounting: SMD Kind of package: reel; tape Kind of transistor: complementary pair Current gain: 30...300 Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PMBT4403YSX | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.55W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Current gain: 20...300 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMBTA13,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Kind of transistor: Darlington Current gain: 5000...10000 Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BUK9Y09-40B,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 53A Pulsed drain current: 300A Power dissipation: 105.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 19mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74HC241PW,118 | NEXPERIA |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z3V3T1GX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOD323; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Max. forward voltage: 1.1V
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOD323; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Max. forward voltage: 1.1V
Leakage current: 5µA
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.13 грн |
MM3Z3V3T1GX |
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на замовлення 39000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6000+ | 1.50 грн |
PUMH9-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 3745 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
120+ | 3.66 грн |
125+ | 3.17 грн |
385+ | 2.42 грн |
1055+ | 2.29 грн |
PUMH9-QH |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
PUMH9-QZ |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
PUMH9,135 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
PUMH9,125 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 100mA; SC88,SOT363,TSSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Semiconductor structure: double
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 100mA; SC88,SOT363,TSSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Semiconductor structure: double
Frequency: 230MHz
на замовлення 21000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.95 грн |
PUMH9-QF |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
на замовлення 90000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.11 грн |
74LVC1G386GW,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
на замовлення 727 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.66 грн |
65+ | 6.16 грн |
100+ | 5.21 грн |
215+ | 4.34 грн |
500+ | 4.27 грн |
591+ | 4.11 грн |
HEF4030BT,653 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C
Kind of package: reel; tape
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of gate: XOR
Operating temperature: -40...125°C
Quiescent current: 30µA
Number of inputs: 2
Supply voltage: 3...15V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C
Kind of package: reel; tape
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of gate: XOR
Operating temperature: -40...125°C
Quiescent current: 30µA
Number of inputs: 2
Supply voltage: 3...15V DC
Case: SO14
на замовлення 1388 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.72 грн |
18+ | 22.51 грн |
25+ | 19.75 грн |
61+ | 18.56 грн |
74AUP1G386GS,132 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; IN: 3; CMOS; SMD; XSON6; Mini Logic; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; IN: 3; CMOS; SMD; XSON6; Mini Logic; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
товару немає в наявності
В кошику
од. на суму грн.
74AUP1G386GM,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
товару немає в наявності
В кошику
од. на суму грн.
74AUP1G386GW,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
товару немає в наявності
В кошику
од. на суму грн.
74LVC1G386GV,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC74A; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC74A; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
товару немає в наявності
В кошику
од. на суму грн.
74AUP1G58GM,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; Ch: 1; IN: 3; CMOS; SMD; XSON6; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; Ch: 1; IN: 3; CMOS; SMD; XSON6; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: Mini Logic
товару немає в наявності
В кошику
од. на суму грн.
74AUP1G58GW,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: Mini Logic
товару немає в наявності
В кошику
од. на суму грн.
74AUP2G58GUX |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; Ch: 2; IN: 3; CMOS; SMD; XQFN10; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XQFN10
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; Ch: 2; IN: 3; CMOS; SMD; XQFN10; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XQFN10
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
74AUP1T58GM,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 2.3...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 2.3...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
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74AUP1T58GW,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 2.3...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 2.3...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
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BCV61,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.04 грн |
BC846B-QVL |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Frequency: 100MHz
Application: automotive industry
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 0.90 грн |
PBRP123YT,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.6A; 370mW; SOT23,TO236AB
Type of transistor: PNP
Kind of transistor: BRT
Mounting: SMD
Case: SOT23; TO236AB
Power dissipation: 0.37W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 190...320
Base resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.6A; 370mW; SOT23,TO236AB
Type of transistor: PNP
Kind of transistor: BRT
Mounting: SMD
Case: SOT23; TO236AB
Power dissipation: 0.37W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 190...320
Base resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Base-emitter resistor: 10kΩ
Polarisation: bipolar
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PBRP123YT-QR |
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на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.36 грн |
BZX79-C12,143 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 12V; Ammo Pack; DO35; single diode; 250mA
Kind of package: Ammo Pack
Case: DO35
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Max. load current: 0.25A
Power dissipation: 0.4/0.5W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 12V
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 12V; Ammo Pack; DO35; single diode; 250mA
Kind of package: Ammo Pack
Case: DO35
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Max. load current: 0.25A
Power dissipation: 0.4/0.5W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 12V
на замовлення 3318 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.27 грн |
97+ | 4.11 грн |
151+ | 2.62 грн |
500+ | 1.91 грн |
703+ | 1.32 грн |
1932+ | 1.25 грн |
BZV85-C4V7,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 4.7V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 4.7V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
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NX7002BKWX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3027 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.21 грн |
61+ | 6.56 грн |
91+ | 4.36 грн |
108+ | 3.66 грн |
462+ | 2.01 грн |
1270+ | 1.90 грн |
3000+ | 1.84 грн |
NX7002BKSX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC88; SOT363; TSSOP6
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC88; SOT363; TSSOP6
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Features of semiconductor devices: logic level
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.31 грн |
36+ | 11.06 грн |
43+ | 9.40 грн |
100+ | 5.00 грн |
272+ | 3.41 грн |
500+ | 3.38 грн |
748+ | 3.22 грн |
1000+ | 3.17 грн |
NX7002BKMBYL |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.9A
Power dissipation: 0.68W
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.9A
Power dissipation: 0.68W
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 5801 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.31 грн |
40+ | 10.11 грн |
59+ | 6.71 грн |
100+ | 5.56 грн |
329+ | 2.82 грн |
904+ | 2.67 грн |
5000+ | 2.57 грн |
NX7002BKMYL |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.9A
Power dissipation: 0.35W
Case: DFN1006-3; SOT883
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.9A
Power dissipation: 0.35W
Case: DFN1006-3; SOT883
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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PESD5V0S1BLD,315 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5V; 12A; bidirectional; DFN1006-2; automotive
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Application: automotive
Version: ESD
Operating temperature: -55...150°C
Capacitance: 35pF
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5V; 12A; bidirectional; DFN1006-2; automotive
Type of diode: TVS
Peak pulse power dissipation: 130W
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Application: automotive
Version: ESD
Operating temperature: -55...150°C
Capacitance: 35pF
Number of channels: 1
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.22 грн |
PESD5V0L1ULD,315 |
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на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.96 грн |
PESD5V0S1ULD,315 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.96 грн |
PESD15VS1ULD,315 |
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на замовлення 60000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.86 грн |
PMEG2005BELD,315 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 140000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 5.02 грн |
BUK9K32-100EX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 19A; Idm: 106A; 64W
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 27.3nC
On-state resistance: 91mΩ
Application: automotive industry
Gate-source voltage: ±10V
Drain current: 19A
Power dissipation: 64W
Drain-source voltage: 100V
Pulsed drain current: 106A
Type of transistor: N-MOSFET x2
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 19A; Idm: 106A; 64W
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 27.3nC
On-state resistance: 91mΩ
Application: automotive industry
Gate-source voltage: ±10V
Drain current: 19A
Power dissipation: 64W
Drain-source voltage: 100V
Pulsed drain current: 106A
Type of transistor: N-MOSFET x2
Case: LFPAK33; SOT1210
Kind of package: reel; tape
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од. на суму грн.
PSMN6R1-25MLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 235A
Power dissipation: 42W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 8.98mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 235A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 235A
Power dissipation: 42W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 8.98mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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BUK7K45-100EX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 53W
Case: LFPAK56D; SOT1205
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 53W
Case: LFPAK56D; SOT1205
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
BZV49-C18,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOT89; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOT89; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 1V
на замовлення 717 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.08 грн |
12+ | 35.38 грн |
13+ | 31.75 грн |
25+ | 26.93 грн |
47+ | 19.75 грн |
130+ | 18.64 грн |
BAT54J-QX |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 30V; 0.2A; 550mW
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.55W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 30V; 0.2A; 550mW
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.55W
Application: automotive industry
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PRTR5V0U2X,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
на замовлення 4129 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.62 грн |
18+ | 22.04 грн |
20+ | 19.75 грн |
79+ | 11.85 грн |
216+ | 11.22 грн |
500+ | 11.06 грн |
750+ | 10.82 грн |
PRTR5V0U2F,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
на замовлення 3338 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 18.12 грн |
27+ | 14.69 грн |
67+ | 14.03 грн |
100+ | 12.95 грн |
500+ | 12.80 грн |
PRTR5V0U2AX,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
на замовлення 627 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.62 грн |
17+ | 23.62 грн |
68+ | 13.82 грн |
185+ | 13.03 грн |
PESD18VF1BLYL |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 19÷24V; 1A; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Max. off-state voltage: 18V
Breakdown voltage: 19...24V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 30nA
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 19÷24V; 1A; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Max. off-state voltage: 18V
Breakdown voltage: 19...24V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 30nA
Version: ESD
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BZX84-C6V8.215 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.8V; SMD; reel,tape; SOT23; Ifmax: 200mA
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.8V; SMD; reel,tape; SOT23; Ifmax: 200mA
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 6.8V
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BZX84-C6V8-QVL |
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на замовлення 140000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.25 грн |
BUK9Y19-55B,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; Idm: 184A; 85W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 18nC
On-state resistance: 17.3mΩ
Gate-source voltage: ±15V
Power dissipation: 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 184A
Drain current: 46A
Drain-source voltage: 55V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; Idm: 184A; 85W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 18nC
On-state resistance: 17.3mΩ
Gate-source voltage: ±15V
Power dissipation: 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 184A
Drain current: 46A
Drain-source voltage: 55V
на замовлення 991 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.55 грн |
10+ | 48.42 грн |
29+ | 32.94 грн |
78+ | 31.12 грн |
500+ | 29.93 грн |
BUK6Y14-40PX |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 64nC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Power dissipation: 110W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -257A
Drain current: -46A
Drain-source voltage: -40V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 64nC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Power dissipation: 110W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -257A
Drain current: -46A
Drain-source voltage: -40V
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.31 грн |
10+ | 55.29 грн |
18+ | 52.92 грн |
49+ | 49.76 грн |
50+ | 48.18 грн |
PSMN4R0-30YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Gate charge: 9.1nC
On-state resistance: 4.4mΩ
Gate-source voltage: ±20V
Power dissipation: 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 378A
Drain current: 95A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Gate charge: 9.1nC
On-state resistance: 4.4mΩ
Gate-source voltage: ±20V
Power dissipation: 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 378A
Drain current: 95A
Drain-source voltage: 30V
на замовлення 692 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.22 грн |
17+ | 23.62 грн |
47+ | 19.82 грн |
129+ | 18.80 грн |
500+ | 18.48 грн |
BUK9Y19-75B,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 48mΩ
Gate-source voltage: ±15V
Power dissipation: 106W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 192A
Drain current: 34.1A
Drain-source voltage: 75V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 48mΩ
Gate-source voltage: ±15V
Power dissipation: 106W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 192A
Drain current: 34.1A
Drain-source voltage: 75V
на замовлення 931 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.15 грн |
10+ | 51.34 грн |
100+ | 50.55 грн |
BZX84-C5V6-QR |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Application: automotive industry
Zener voltage: 5.6V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Application: automotive industry
Zener voltage: 5.6V
Kind of package: reel; tape
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од. на суму грн.
PMBT2369,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 500MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 500MHz
на замовлення 3458 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.91 грн |
54+ | 7.42 грн |
77+ | 5.13 грн |
100+ | 4.39 грн |
500+ | 3.12 грн |
548+ | 1.70 грн |
1505+ | 1.60 грн |
PMBT5550,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Current gain: 250
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Current gain: 250
Frequency: 300MHz
на замовлення 5259 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.31 грн |
39+ | 10.27 грн |
47+ | 8.45 грн |
72+ | 5.53 грн |
100+ | 4.65 грн |
424+ | 2.19 грн |
1165+ | 2.07 грн |
PMBT3946YPN,115 |
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Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Current gain: 30...300
Frequency: 300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Current gain: 30...300
Frequency: 300MHz
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PMBT2222AQAZ |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 940mW; DFN1010D-3,SOT1215
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.94W
Case: DFN1010D-3; SOT1215
Pulsed collector current: 0.8A
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...300
Frequency: 340MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 940mW; DFN1010D-3,SOT1215
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.94W
Case: DFN1010D-3; SOT1215
Pulsed collector current: 0.8A
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...300
Frequency: 340MHz
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PMBT2907AQAZ |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 940mW; DFN1010D-3,SOT1215
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.94W
Case: DFN1010D-3; SOT1215
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Current gain: 50...300
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 940mW; DFN1010D-3,SOT1215
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.94W
Case: DFN1010D-3; SOT1215
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Current gain: 50...300
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од. на суму грн.
PMBT3946VPN,115 |
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Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Current gain: 30...300
Frequency: 300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Current gain: 30...300
Frequency: 300MHz
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од. на суму грн.
PMBT4403YSX |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.55W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Current gain: 20...300
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.55W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Current gain: 20...300
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од. на суму грн.
PMBTA13,215 |
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Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: Darlington
Current gain: 5000...10000
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: Darlington
Current gain: 5000...10000
Frequency: 125MHz
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од. на суму грн.
BUK9Y09-40B,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
74HC241PW,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 12.16 грн |