Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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74HCT595D.112 | NEXPERIA |
![]() Description: IC: digital; CMOS,TTL; SMD; SO16; HCT; tube; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel/serial out; serial input; shift register Technology: CMOS; TTL Mounting: SMD Case: SO16 Family: HCT Kind of package: tube Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
IP4294CZ10-TBR,115 | NEXPERIA |
![]() Description: Diode: TVS array; 6V; DFN2510A-10,SOT1176-1; Ch: 2; ESD Case: DFN2510A-10; SOT1176-1 Mounting: SMD Number of channels: 2 Version: ESD Type of diode: TVS array Leakage current: 1µA Max. off-state voltage: 5.5V Breakdown voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PSMN6R5-80PS,127 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 470A Power dissipation: 210W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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PMN30XPX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -21A Power dissipation: 0.55W Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
PMN30XPAX | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -21A Power dissipation: 0.66W Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX79-C13,133 | NEXPERIA |
![]() Description: Diode: Zener; 0.4/0.5W; 13V; Ammo Pack; DO35; single diode; 250mA Type of diode: Zener Semiconductor structure: single diode Mounting: THT Max. load current: 0.25A Power dissipation: 0.4/0.5W Max. forward voltage: 0.9V Tolerance: ±5% Kind of package: Ammo Pack Zener voltage: 13V Case: DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
BZX79-C13,143 | NEXPERIA |
![]() Description: Diode: Zener Type of diode: Zener |
на замовлення 55000 шт: термін постачання 21-30 дні (днів) |
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74HC21PW,118 | NEXPERIA |
![]() Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Case: TSSOP14 Number of channels: dual; 2 Family: HC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Delay time: 165ns Quiescent current: 40µA Supply voltage: 2...6V DC Kind of gate: AND Number of inputs: 4 Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCM847DS,115 | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 380mW; SC74,SOT457,TSOP6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC74; SOT457; TSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
на замовлення 914 шт: термін постачання 21-30 дні (днів) |
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BZX84-B2V4,215 | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 2.4V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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BZX84-B2V4-QR | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 2.4V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PUMH10,115 | NEXPERIA |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Mounting: SMD Case: SC88; SOT363; TSSOP6 Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 230MHz Polarisation: bipolar Kind of transistor: BRT |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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PUMB10,115 | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Mounting: SMD Case: SC88; SOT363; TSSOP6 Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 180MHz Polarisation: bipolar Kind of transistor: BRT |
на замовлення 1143 шт: термін постачання 21-30 дні (днів) |
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74HCT139PW,118 | NEXPERIA |
![]() Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer Number of channels: 2 Mounting: SMD Case: TSSOP16 Family: HCT Kind of package: reel; tape Technology: CMOS; TTL Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74HCT11DB,112 | NEXPERIA |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: tube Family: HCT |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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74HCT11PW,118 | NEXPERIA |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Quiescent current: 40µA Technology: CMOS; TTL Kind of package: reel; tape Operating temperature: -40...125°C Delay time: 36ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74HCT112D,653 | NEXPERIA |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO16; reel,tape; HCT Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Family: HCT Technology: CMOS; TTL Kind of integrated circuit: JK flip-flop Trigger: negative-edge-triggered Kind of package: reel; tape Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
74HCT112PW,118 | NEXPERIA |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP16; reel,tape Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP16 Supply voltage: 4.5...5.5V DC Family: HCT Technology: CMOS; TTL Kind of integrated circuit: JK flip-flop Trigger: negative-edge-triggered Kind of package: reel; tape Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
74HCT11PW-Q100J | NEXPERIA |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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74AHCT74D,118 | NEXPERIA |
![]() Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; reel,tape; AHCT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Family: AHCT Trigger: positive-edge-triggered Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AHCT74PW,118 | NEXPERIA |
![]() Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Family: AHCT Trigger: positive-edge-triggered Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
74AHCT07APWJ | NEXPERIA |
![]() Description: IC: digital; buffer,hex; Ch: 6; IN: 1; TTL; SMD; TSSOP14; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; hex Number of channels: 6 Number of inputs: 1 Technology: TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Kind of output: open drain Supply voltage: 4.5...5.5V DC Family: AHCT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PSMN4R3-100PS,127 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 673A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 673A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PSMN4R8-100BSEJ | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 405W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 278nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
PSMN3R7-100BSEJ | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 780A; 405W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 780A Power dissipation: 405W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 10.7mΩ Mounting: SMD Gate charge: 246nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PSMN3R8-100BS,118 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 306W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
PSMN3R9-100YSFX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 690A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 690A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 9.9mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PSMN5R0-100PS,127 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 622A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
BUK7Y38-100EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 120A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 30.9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZV85-C11,113 | NEXPERIA |
![]() Description: Diode: Zener; 1/1.3W; 11V; reel,tape; DO41; single diode; 500mA Type of diode: Zener Power dissipation: 1/1.3W Zener voltage: 11V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.5A Max. forward voltage: 1V |
на замовлення 4315 шт: термін постачання 21-30 дні (днів) |
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74HC165N,652 | NEXPERIA |
![]() Description: IC: digital; 8bit,shift register,parallel in,serial output Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel in; serial output; shift register Mounting: THT Case: DIP16 Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: tube Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74HCT157D,653 | NEXPERIA |
![]() Description: IC: digital; multiplexer; Ch: 4; IN: 2; TTL; SMD; SO16; HCT; 4.5÷5.5VDC Type of integrated circuit: digital Number of channels: 4 Number of inputs: 2 Technology: TTL Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HCT Kind of integrated circuit: multiplexer |
на замовлення 407 шт: термін постачання 21-30 дні (днів) |
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74HCT157PW,118 | NEXPERIA |
![]() Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Mounting: SMD Case: TSSOP16 Family: HCT Technology: CMOS; TTL Kind of package: reel; tape Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
74HCT154BQ,118 | NEXPERIA |
![]() Description: IC: digital; 4 to 16 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL Type of integrated circuit: digital Kind of integrated circuit: 4 to 16 line; decoder; demultiplexer Mounting: SMD Case: DHVQFN24 Family: HCT Supply voltage: 4.5...5.5V DC Number of inputs: 6 Technology: TTL Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74HCT154PW,118 | NEXPERIA |
![]() Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder Mounting: SMD Case: TSSOP24 Family: HCT Technology: CMOS; TTL Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
BUK6D38-30EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Gate charge: 8nC Case: DFN6; SOT1220 On-state resistance: 65mΩ Application: automotive industry Drain current: 12A Pulsed drain current: 68A Power dissipation: 19W Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74HC1G66GW,125 | NEXPERIA |
![]() Description: IC: digital; switch,SPST; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; HC; 2÷6VDC Mounting: SMD Operating temperature: -40...125°C Number of inputs: 1 Supply voltage: 2...6V DC Family: HC Type of integrated circuit: digital Technology: CMOS Case: TSSOP5 Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: SPST; switch |
на замовлення 1990 шт: термін постачання 21-30 дні (днів) |
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1N4743A,113 | NEXPERIA |
![]() Description: Diode: Zener; 1W; 13V; 69mA; reel,tape; DO41; single diode; Ir: 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Max. load current: 0.5A Max. forward voltage: 1.2V Zener current: 69mA |
на замовлення 4970 шт: термін постачання 21-30 дні (днів) |
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1N4743A,133 | NEXPERIA |
![]() ![]() Description: Diode: Zener; 1W; 13V; 69mA; Ammo Pack; DO41; single diode; Ir: 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Max. load current: 0.5A Max. forward voltage: 1.2V Zener current: 69mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74HC366PW,118 | NEXPERIA |
![]() Description: IC: digital; buffer,inverting,line driver; Ch: 6; CMOS; SMD; HC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP16 Family: HC Kind of integrated circuit: buffer; inverting; line driver Kind of output: 3-state Technology: CMOS Kind of package: reel; tape |
на замовлення 2493 шт: термін постачання 21-30 дні (днів) |
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BZX84-C8V2.215 | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Max. load current: 0.2A Max. forward voltage: 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAV74,215 | NEXPERIA |
![]() Description: Diode: switching; SMD; 60V; 125mA; 4ns; SOT23; Ufmax: 1V; Ifsm: 4A Type of diode: switching Kind of package: reel; tape Mounting: SMD Case: SOT23 Reverse recovery time: 4ns Load current: 0.125A Max. forward impulse current: 4A Max. forward voltage: 1V Semiconductor structure: common cathode; double Max. off-state voltage: 60V Features of semiconductor devices: fast switching |
на замовлення 3202 шт: термін постачання 21-30 дні (днів) |
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BZV85-C4V3,113 | NEXPERIA |
![]() Description: Diode: Zener; 1/1.3W; 4.3V; reel,tape; DO41; single diode; 500mA Type of diode: Zener Power dissipation: 1/1.3W Zener voltage: 4.3V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.5A Max. forward voltage: 1V |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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BZX84-C20-QR | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Case: SOT23 Max. load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 0.9V Tolerance: ±5% Application: automotive industry Zener voltage: 20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BZX84-C20-QVL | NEXPERIA |
![]() Description: Diode: Zener Type of diode: Zener |
на замовлення 240000 шт: термін постачання 21-30 дні (днів) |
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PSMN2R0-30YL,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 667A Power dissipation: 97W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
PSMN2R0-30YLDX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 793A Power dissipation: 142W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
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PSMN2R0-100SSFJ | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 189A Pulsed drain current: 1070A Power dissipation: 341W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 242nC Kind of channel: enhancement Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
PSMN2R0-25MLDX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 555A Power dissipation: 74W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 34.4nC Kind of channel: enhancement Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
PSMN2R0-25YLDX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 127A Pulsed drain current: 722A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.95mΩ Mounting: SMD Gate charge: 34.1nC Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
PSMN2R0-40YLDX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 143A Pulsed drain current: 807A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 92nC Kind of channel: enhancement Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
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PSMN2R0-60PS,127 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of channel: enhancement Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||||||
PSMN2R0-60PSRQ | NEXPERIA |
![]() Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 1135A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
74AUP1T97GM,115 | NEXPERIA |
![]() Description: 74AUP1T97GM,115 |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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74AHCT1G125GM,115 | NEXPERIA |
![]() ![]() Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of outputs: 1 Case: XSON6 Mounting: SMD Operating temperature: -40...125°C Number of inputs: 1 Kind of output: 3-state Family: AHCT Technology: CMOS |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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74AHC1G00GW.125 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; AHC; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP5 Manufacturer series: AHC Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GAN041-650WSBQ | NEXPERIA |
![]() Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 33.4A Pulsed drain current: 240A Power dissipation: 187W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 22nC Kind of package: tube |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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GAN063-650WSAQ | NEXPERIA |
![]() Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 24.4A Pulsed drain current: 150A Power dissipation: 143W Case: SOT429; TO247 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 15nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
74LVC1G123GN,115 | NEXPERIA |
![]() Description: IC: digital; monostable,multivibrator,Schmitt trigger; Ch: 1 Mounting: SMD Case: XSON8 Technology: CMOS; TTL Manufacturer series: Mini Logic Family: LVC Kind of integrated circuit: monostable; multivibrator; Schmitt trigger Kind of package: reel; tape Kind of input: with Schmitt trigger Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 1.65...5.5V DC Number of inputs: 3 Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
74LVC1G123GS,115 | NEXPERIA |
![]() Description: IC: digital; monostable,multivibrator,Schmitt trigger; Ch: 1 Mounting: SMD Case: XSON8 Technology: CMOS; TTL Manufacturer series: Mini Logic Family: LVC Kind of integrated circuit: monostable; multivibrator; Schmitt trigger Kind of package: reel; tape Kind of input: with Schmitt trigger Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 1.65...5.5V DC Number of inputs: 3 Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. |
74HCT595D.112 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; CMOS,TTL; SMD; SO16; HCT; tube; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel/serial out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Kind of package: tube
Kind of output: 3-state
Category: Shift registers
Description: IC: digital; CMOS,TTL; SMD; SO16; HCT; tube; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel/serial out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Kind of package: tube
Kind of output: 3-state
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В кошику
од. на суму грн.
IP4294CZ10-TBR,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; DFN2510A-10,SOT1176-1; Ch: 2; ESD
Case: DFN2510A-10; SOT1176-1
Mounting: SMD
Number of channels: 2
Version: ESD
Type of diode: TVS array
Leakage current: 1µA
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; DFN2510A-10,SOT1176-1; Ch: 2; ESD
Case: DFN2510A-10; SOT1176-1
Mounting: SMD
Number of channels: 2
Version: ESD
Type of diode: TVS array
Leakage current: 1µA
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
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PSMN6R5-80PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 470A
Power dissipation: 210W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 470A
Power dissipation: 210W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 237.31 грн |
8+ | 131.11 грн |
20+ | 124.00 грн |
PMN30XPX |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
PMN30XPAX |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.66W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.66W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
BZX79-C13,133 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 13V; Ammo Pack; DO35; single diode; 250mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: THT
Max. load current: 0.25A
Power dissipation: 0.4/0.5W
Max. forward voltage: 0.9V
Tolerance: ±5%
Kind of package: Ammo Pack
Zener voltage: 13V
Case: DO35
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 13V; Ammo Pack; DO35; single diode; 250mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: THT
Max. load current: 0.25A
Power dissipation: 0.4/0.5W
Max. forward voltage: 0.9V
Tolerance: ±5%
Kind of package: Ammo Pack
Zener voltage: 13V
Case: DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX79-C13,143 |
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на замовлення 55000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.23 грн |
74HC21PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: dual; 2
Family: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 165ns
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of gate: AND
Number of inputs: 4
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: dual; 2
Family: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 165ns
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of gate: AND
Number of inputs: 4
Technology: CMOS
товару немає в наявності
В кошику
од. на суму грн.
BCM847DS,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 380mW; SC74,SOT457,TSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC74; SOT457; TSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 380mW; SC74,SOT457,TSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC74; SOT457; TSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 914 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.17 грн |
19+ | 21.33 грн |
50+ | 15.01 грн |
100+ | 12.80 грн |
110+ | 8.45 грн |
301+ | 7.98 грн |
BZX84-B2V4,215 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 170 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.29 грн |
85+ | 4.66 грн |
129+ | 3.08 грн |
BZX84-B2V4-QR |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
PUMH10,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 72 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.61 грн |
38+ | 10.43 грн |
53+ | 7.46 грн |
68+ | 5.84 грн |
PUMB10,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 180MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 180MHz
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 1143 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
65+ | 6.63 грн |
76+ | 5.25 грн |
90+ | 4.39 грн |
360+ | 2.57 грн |
500+ | 2.34 грн |
74HCT139PW,118 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Family: HCT
Kind of package: reel; tape
Technology: CMOS; TTL
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Family: HCT
Kind of package: reel; tape
Technology: CMOS; TTL
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
74HCT11DB,112 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
на замовлення 238 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 12.50 грн |
39+ | 10.35 грн |
44+ | 9.16 грн |
111+ | 8.37 грн |
156+ | 7.74 грн |
74HCT11PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 36ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 36ns
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74HCT112D,653 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO16; reel,tape; HCT
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; SO16; reel,tape; HCT
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: reel; tape
Operating temperature: -40...125°C
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74HCT112PW,118 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: reel; tape
Operating temperature: -40...125°C
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74HCT11PW-Q100J |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 13.18 грн |
74AHCT74D,118 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; reel,tape; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: AHCT
Trigger: positive-edge-triggered
Technology: CMOS; TTL
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; reel,tape; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: AHCT
Trigger: positive-edge-triggered
Technology: CMOS; TTL
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74AHCT74PW,118 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: AHCT
Trigger: positive-edge-triggered
Technology: CMOS; TTL
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: AHCT
Trigger: positive-edge-triggered
Technology: CMOS; TTL
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74AHCT07APWJ |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; TTL; SMD; TSSOP14; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Kind of output: open drain
Supply voltage: 4.5...5.5V DC
Family: AHCT
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; TTL; SMD; TSSOP14; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Kind of output: open drain
Supply voltage: 4.5...5.5V DC
Family: AHCT
Kind of package: reel; tape
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PSMN4R3-100PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 673A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 673A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 673A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 673A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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PSMN4R8-100BSEJ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN3R7-100BSEJ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 780A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 780A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Gate charge: 246nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 780A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 780A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Gate charge: 246nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN3R8-100BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN3R9-100YSFX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 690A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 690A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 690A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 690A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN5R0-100PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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BUK7Y38-100EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 30.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 30.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BZV85-C11,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 11V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 11V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 11V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 11V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
на замовлення 4315 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
80+ | 5.36 грн |
140+ | 2.92 грн |
250+ | 2.63 грн |
405+ | 2.29 грн |
1115+ | 2.17 грн |
74HC165N,652 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Mounting: THT
Case: DIP16
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: tube
Operating temperature: -40...125°C
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Mounting: THT
Case: DIP16
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: tube
Operating temperature: -40...125°C
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74HCT157D,653 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; TTL; SMD; SO16; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; TTL; SMD; SO16; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: multiplexer
на замовлення 407 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.82 грн |
25+ | 16.11 грн |
28+ | 14.37 грн |
66+ | 14.14 грн |
100+ | 12.87 грн |
181+ | 12.80 грн |
74HCT157PW,118 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
Number of inputs: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
Number of inputs: 2
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74HCT154BQ,118 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; decoder; demultiplexer
Mounting: SMD
Case: DHVQFN24
Family: HCT
Supply voltage: 4.5...5.5V DC
Number of inputs: 6
Technology: TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; decoder; demultiplexer
Mounting: SMD
Case: DHVQFN24
Family: HCT
Supply voltage: 4.5...5.5V DC
Number of inputs: 6
Technology: TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
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74HCT154PW,118 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP24
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4 to 16 line,line decoder,demultiplexer; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 4 to 16 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP24
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
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BUK6D38-30EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 8nC
Case: DFN6; SOT1220
On-state resistance: 65mΩ
Application: automotive industry
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 8nC
Case: DFN6; SOT1220
On-state resistance: 65mΩ
Application: automotive industry
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Gate-source voltage: ±20V
Drain-source voltage: 30V
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74HC1G66GW,125 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPST; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; HC; 2÷6VDC
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 1
Supply voltage: 2...6V DC
Family: HC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP5
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: SPST; switch
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPST; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; HC; 2÷6VDC
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 1
Supply voltage: 2...6V DC
Family: HC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP5
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: SPST; switch
на замовлення 1990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.21 грн |
55+ | 7.27 грн |
64+ | 6.22 грн |
71+ | 5.58 грн |
100+ | 5.08 грн |
250+ | 4.59 грн |
302+ | 3.06 грн |
831+ | 2.90 грн |
1N4743A,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; 69mA; reel,tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Max. load current: 0.5A
Max. forward voltage: 1.2V
Zener current: 69mA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; 69mA; reel,tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Max. load current: 0.5A
Max. forward voltage: 1.2V
Zener current: 69mA
на замовлення 4970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.51 грн |
75+ | 5.29 грн |
97+ | 4.11 грн |
110+ | 3.60 грн |
295+ | 3.15 грн |
811+ | 2.98 грн |
1000+ | 2.93 грн |
1N4743A,133 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; 69mA; Ammo Pack; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Max. load current: 0.5A
Max. forward voltage: 1.2V
Zener current: 69mA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; 69mA; Ammo Pack; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Max. load current: 0.5A
Max. forward voltage: 1.2V
Zener current: 69mA
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74HC366PW,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 6; CMOS; SMD; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Family: HC
Kind of integrated circuit: buffer; inverting; line driver
Kind of output: 3-state
Technology: CMOS
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 6; CMOS; SMD; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Family: HC
Kind of integrated circuit: buffer; inverting; line driver
Kind of output: 3-state
Technology: CMOS
Kind of package: reel; tape
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.14 грн |
10+ | 44.94 грн |
48+ | 19.59 грн |
100+ | 19.51 грн |
131+ | 18.48 грн |
BZX84-C8V2.215 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
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BAV74,215 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 60V; 125mA; 4ns; SOT23; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Reverse recovery time: 4ns
Load current: 0.125A
Max. forward impulse current: 4A
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Max. off-state voltage: 60V
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 60V; 125mA; 4ns; SOT23; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Reverse recovery time: 4ns
Load current: 0.125A
Max. forward impulse current: 4A
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Max. off-state voltage: 60V
Features of semiconductor devices: fast switching
на замовлення 3202 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.24 грн |
74+ | 5.37 грн |
80+ | 4.98 грн |
92+ | 4.33 грн |
103+ | 3.85 грн |
117+ | 3.38 грн |
250+ | 2.77 грн |
500+ | 2.31 грн |
913+ | 1.02 грн |
BZV85-C4V3,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 4.3V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 4.3V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
65+ | 6.55 грн |
115+ | 3.46 грн |
250+ | 3.12 грн |
375+ | 2.48 грн |
1030+ | 2.35 грн |
BZX84-C20-QR |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Application: automotive industry
Zener voltage: 20V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Application: automotive industry
Zener voltage: 20V
Kind of package: reel; tape
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BZX84-C20-QVL |
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на замовлення 240000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.24 грн |
PSMN2R0-30YL,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Kind of package: reel; tape
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PSMN2R0-30YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
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PSMN2R0-100SSFJ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of channel: enhancement
Kind of package: reel; tape
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PSMN2R0-25MLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of channel: enhancement
Kind of package: reel; tape
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PSMN2R0-25YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of channel: enhancement
Kind of package: reel; tape
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PSMN2R0-40YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of channel: enhancement
Kind of package: reel; tape
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PSMN2R0-60PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Kind of package: tube
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PSMN2R0-60PSRQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
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74AUP1T97GM,115 |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 9.53 грн |
74AHCT1G125GM,115 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of outputs: 1
Case: XSON6
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 1
Kind of output: 3-state
Family: AHCT
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of outputs: 1
Case: XSON6
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 1
Kind of output: 3-state
Family: AHCT
Technology: CMOS
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 6.38 грн |
74AHC1G00GW.125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; AHC; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: AHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; AHC; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: AHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
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GAN041-650WSBQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 33.4A
Pulsed drain current: 240A
Power dissipation: 187W
Case: SOT429; TO247
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 33.4A
Pulsed drain current: 240A
Power dissipation: 187W
Case: SOT429; TO247
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 737.45 грн |
4+ | 650.82 грн |
30+ | 627.91 грн |
GAN063-650WSAQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 24.4A
Pulsed drain current: 150A
Power dissipation: 143W
Case: SOT429; TO247
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 24.4A
Pulsed drain current: 150A
Power dissipation: 143W
Case: SOT429; TO247
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
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74LVC1G123GN,115 |
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Виробник: NEXPERIA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,Schmitt trigger; Ch: 1
Mounting: SMD
Case: XSON8
Technology: CMOS; TTL
Manufacturer series: Mini Logic
Family: LVC
Kind of integrated circuit: monostable; multivibrator; Schmitt trigger
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Number of inputs: 3
Type of integrated circuit: digital
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,Schmitt trigger; Ch: 1
Mounting: SMD
Case: XSON8
Technology: CMOS; TTL
Manufacturer series: Mini Logic
Family: LVC
Kind of integrated circuit: monostable; multivibrator; Schmitt trigger
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Number of inputs: 3
Type of integrated circuit: digital
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74LVC1G123GS,115 |
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Виробник: NEXPERIA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,Schmitt trigger; Ch: 1
Mounting: SMD
Case: XSON8
Technology: CMOS; TTL
Manufacturer series: Mini Logic
Family: LVC
Kind of integrated circuit: monostable; multivibrator; Schmitt trigger
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Number of inputs: 3
Type of integrated circuit: digital
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,Schmitt trigger; Ch: 1
Mounting: SMD
Case: XSON8
Technology: CMOS; TTL
Manufacturer series: Mini Logic
Family: LVC
Kind of integrated circuit: monostable; multivibrator; Schmitt trigger
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Number of inputs: 3
Type of integrated circuit: digital
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