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MMSZ6V2T1G MMSZ6V2T1G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 6.2V 500MW SOD123
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+2.18 грн
6000+1.99 грн
9000+1.69 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMSZ6V8T1G MMSZ6V8T1G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.27 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMSZ8V2T1G MMSZ8V2T1G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+1.44 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2111LT1G MMUN2111LT1G onsemi dta114e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+1.76 грн
6000+1.50 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2113LT1G MMUN2113LT1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+2.14 грн
6000+1.84 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2114LT1G MMUN2114LT1G onsemi dta114y-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Resistors Included: R1 and R2
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+1.97 грн
6000+1.68 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2211LT1G MMUN2211LT1G onsemi dtc114e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2212LT1G MMUN2212LT1G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 62470 шт:
термін постачання 21-31 дні (днів)
3000+1.77 грн
6000+1.51 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2213LT1G MMUN2213LT1G onsemi dtc144e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2216LT1G MMUN2216LT1G onsemi dtc143t-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+2.15 грн
6000+1.84 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2232LT1G MMUN2232LT1G onsemi dtc143e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
3000+1.76 грн
6000+1.50 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MPS2222ARLRAG MPS2222ARLRAG onsemi mps2222-d.pdf Description: TRANS NPN 40V 0.6A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
MPS2222G MPS2222G onsemi mps2222-d.pdf Description: TRANS NPN 30V 0.6A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPS2907ARLRAG MPS2907ARLRAG onsemi mps2907a-d.pdf Description: TRANS PNP 60V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
MPS3563G MPS3563G onsemi mps918-d.pdf Description: TRANS NPN 12V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 350 mW
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS3638AG MPS3638AG onsemi mps3638a-d.pdf Description: TRANS PNP 25V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Current - Collector Cutoff (Max): 35nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS4250ARLRMG MPS4250ARLRMG onsemi MPS4250 Rev2.pdf Description: TRANS PNP 40V 0.05A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
MPS5179G MPS5179G onsemi mps5179-d.pdf Description: RF TRANS NPN 12V 2GHZ TO92-3
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPS650G MPS650G onsemi mps650-d.pdf Description: TRANS NPN 40V 2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPS651RLRAG MPS651RLRAG onsemi mps650-d.pdf Description: TRANS NPN 60V 2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
MPS6521G MPS6521G onsemi Description: TRANS NPN 25V 0.1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS6560G MPS6560G onsemi mps6560-d.pdf Description: TRANS NPN 25V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPS6601G MPS6601G onsemi MPS66x1%2C%20665x%20Rev4.pdf Description: TRANS NPN 25V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS6602G MPS6602G onsemi MPS66x1, 665x Rev4.pdf Description: TRANS NPN 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPS6652G MPS6652G onsemi mps6601-d.pdf Description: TRANS PNP 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Bulk
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
товару немає в наявності
В кошику  од. на суму  грн.
MPS6725G MPS6725G onsemi mps6724-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Frequency - Transition: 1GHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS750G MPS750G onsemi mps650-d.pdf Description: TRANS PNP 40V 2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPS751RLRAG MPS751RLRAG onsemi mps650-d.pdf Description: TRANS PNP 60V 2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPS8098RLRAG MPS8098RLRAG onsemi MPS809x, 859x Rev5.pdf Description: TRANS NPN 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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MPS8099RLRAG MPS8099RLRAG onsemi mps8098-d.pdf Description: TRANS NPN 80V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
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MPS8598RLRAG MPS8598RLRAG onsemi MPS809x,%20859x%20Rev5.pdf Description: TRANS PNP 60V 0.5A TO92
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 Мінімальне замовлення: 6000 шт
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MPS8599RLRAG MPS8599RLRAG onsemi mps8098-d.pdf Description: TRANS PNP 80V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
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MPS918G MPS918G onsemi mps918-d.pdf Description: TRANS NPN 15V 0.05A TO92
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSA05RLRAG MPSA05RLRAG onsemi pzta06-d.pdf Description: TRANS NPN 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPSA06RLRAG MPSA06RLRAG onsemi pzta06-d.pdf Description: TRANS NPN 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA13RLRAG MPSA13RLRAG onsemi mpsa13-d.pdf Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14RLRAG MPSA14RLRAG onsemi mpsa13-d.pdf Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA18RLRAG MPSA18RLRAG onsemi mpsa18-d.pdf Description: TRANS NPN 45V 0.2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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MPSA20G MPSA20G onsemi mpsa20-d.pdf Description: TRANS NPN 40V 0.1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSA27RLRAG MPSA27RLRAG onsemi mpsa27-d.pdf Description: TRANS NPN DARL 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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MPSA28G MPSA28G onsemi MPSA28, 29 Rev2.pdf Description: TRANS NPN DARL 80V 0.5A TO92
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
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 Мінімальне замовлення: 5000 шт
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MPSA42RLRAG MPSA42RLRAG onsemi mpsa42-d.pdf Description: TRANS NPN 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA44RLRAG MPSA44RLRAG onsemi mpsa44-d.pdf Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
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MPSA56RLRAG MPSA56RLRAG onsemi pzta06-d.pdf Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA63RLRAG MPSA63RLRAG onsemi mpsa62-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
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MPSA64G MPSA64G onsemi mpsa62-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
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MPSA77G MPSA77G onsemi mpsa75-d.pdf Description: TRANS PNP DARL 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSA93G MPSA93G onsemi mpsa92-d.pdf Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MPSH10RLRAG MPSH10RLRAG onsemi mpsh10-d.pdf Description: RF TRANS NPN 25V 650MHZ TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
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MPSW01AG MPSW01AG onsemi mpsw01-d.pdf Description: TRANS NPN 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW01G MPSW01G onsemi mpsw01-d.pdf Description: TRANS NPN 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Box
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MPSW05G MPSW05G onsemi mpsw05-d.pdf Description: TRANS NPN 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW06RLRAG MPSW06RLRAG onsemi mpsw05-d.pdf Description: TRANS NPN 80V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
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MPSW45AG MPSW45AG onsemi mpsw45-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45G MPSW45G onsemi mpsw45-d.pdf Description: TRANS NPN DARL 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51AG MPSW51AG onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPSW63G MPSW63G onsemi mpsw63-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
товару немає в наявності
В кошику  од. на суму  грн.
MPSW92G MPSW92G onsemi mpsw92-d.pdf Description: TRANS PNP 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MR2535LRLG MR2535LRLG onsemi Description: TVS DIODE 20VWM MICRODE BUTTON
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 20V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
товару немає в наявності
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MR2835SKG MR2835SKG onsemi MR2835SK-D.pdf description Description: TVS DIODE 23VWM TOP CAN
Part Status: Obsolete
Power Line Protection: No
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Top Can
Voltage - Reverse Standoff (Typ): 23V
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Top Can
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ6V2T1G mmsz2v4t1-d.pdf
MMSZ6V2T1G
Виробник: onsemi
Description: DIODE ZENER 6.2V 500MW SOD123
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.18 грн
6000+1.99 грн
9000+1.69 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMSZ6V8T1G mmsz2v4t1-d.pdf
MMSZ6V8T1G
Виробник: onsemi
Description: DIODE ZENER 6.8V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.27 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMSZ8V2T1G mmsz2v4t1-d.pdf
MMSZ8V2T1G
Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.44 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2111LT1G dta114e-d.pdf
MMUN2111LT1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.76 грн
6000+1.50 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2113LT1G dta144e-d.pdf
MMUN2113LT1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.14 грн
6000+1.84 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2114LT1G dta114y-d.pdf
MMUN2114LT1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Resistors Included: R1 and R2
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.97 грн
6000+1.68 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2211LT1G dtc114e-d.pdf
MMUN2211LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2212LT1G dtc124e-d.pdf
MMUN2212LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 62470 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.77 грн
6000+1.51 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2213LT1G dtc144e-d.pdf
MMUN2213LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2216LT1G dtc143t-d.pdf
MMUN2216LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.15 грн
6000+1.84 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MMUN2232LT1G dtc143e-d.pdf
MMUN2232LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.76 грн
6000+1.50 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MPS2222ARLRAG mps2222-d.pdf
MPS2222ARLRAG
Виробник: onsemi
Description: TRANS NPN 40V 0.6A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
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MPS2222G mps2222-d.pdf
MPS2222G
Виробник: onsemi
Description: TRANS NPN 30V 0.6A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
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MPS2907ARLRAG mps2907a-d.pdf
MPS2907ARLRAG
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
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MPS3563G mps918-d.pdf
MPS3563G
Виробник: onsemi
Description: TRANS NPN 12V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 350 mW
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS3638AG mps3638a-d.pdf
MPS3638AG
Виробник: onsemi
Description: TRANS PNP 25V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Current - Collector Cutoff (Max): 35nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS4250ARLRMG MPS4250 Rev2.pdf
MPS4250ARLRMG
Виробник: onsemi
Description: TRANS PNP 40V 0.05A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
MPS5179G mps5179-d.pdf
MPS5179G
Виробник: onsemi
Description: RF TRANS NPN 12V 2GHZ TO92-3
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPS650G mps650-d.pdf
MPS650G
Виробник: onsemi
Description: TRANS NPN 40V 2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
MPS651RLRAG mps650-d.pdf
MPS651RLRAG
Виробник: onsemi
Description: TRANS NPN 60V 2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
MPS6521G
MPS6521G
Виробник: onsemi
Description: TRANS NPN 25V 0.1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MPS6560G mps6560-d.pdf
MPS6560G
Виробник: onsemi
Description: TRANS NPN 25V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPS6601G MPS66x1%2C%20665x%20Rev4.pdf
MPS6601G
Виробник: onsemi
Description: TRANS NPN 25V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPS6602G MPS66x1, 665x Rev4.pdf
MPS6602G
Виробник: onsemi
Description: TRANS NPN 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPS6652G mps6601-d.pdf
MPS6652G
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Bulk
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
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MPS6725G mps6724-d.pdf
MPS6725G
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Frequency - Transition: 1GHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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Мінімальне замовлення: 5000 шт
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MPS750G mps650-d.pdf
MPS750G
Виробник: onsemi
Description: TRANS PNP 40V 2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPS751RLRAG mps650-d.pdf
MPS751RLRAG
Виробник: onsemi
Description: TRANS PNP 60V 2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPS8098RLRAG MPS809x, 859x Rev5.pdf
MPS8098RLRAG
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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MPS8099RLRAG mps8098-d.pdf
MPS8099RLRAG
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
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MPS8598RLRAG MPS809x,%20859x%20Rev5.pdf
MPS8598RLRAG
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
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Мінімальне замовлення: 6000 шт
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MPS8599RLRAG mps8098-d.pdf
MPS8599RLRAG
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
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MPS918G mps918-d.pdf
MPS918G
Виробник: onsemi
Description: TRANS NPN 15V 0.05A TO92
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSA05RLRAG pzta06-d.pdf
MPSA05RLRAG
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPSA06RLRAG pzta06-d.pdf
MPSA06RLRAG
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA13RLRAG mpsa13-d.pdf
MPSA13RLRAG
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14RLRAG mpsa13-d.pdf
MPSA14RLRAG
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA18RLRAG mpsa18-d.pdf
MPSA18RLRAG
Виробник: onsemi
Description: TRANS NPN 45V 0.2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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MPSA20G mpsa20-d.pdf
MPSA20G
Виробник: onsemi
Description: TRANS NPN 40V 0.1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSA27RLRAG mpsa27-d.pdf
MPSA27RLRAG
Виробник: onsemi
Description: TRANS NPN DARL 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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MPSA28G MPSA28, 29 Rev2.pdf
MPSA28G
Виробник: onsemi
Description: TRANS NPN DARL 80V 0.5A TO92
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
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Мінімальне замовлення: 5000 шт
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MPSA42RLRAG mpsa42-d.pdf
MPSA42RLRAG
Виробник: onsemi
Description: TRANS NPN 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA44RLRAG mpsa44-d.pdf
MPSA44RLRAG
Виробник: onsemi
Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
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MPSA56RLRAG pzta06-d.pdf
MPSA56RLRAG
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA63RLRAG mpsa62-d.pdf
MPSA63RLRAG
Виробник: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
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MPSA64G mpsa62-d.pdf
MPSA64G
Виробник: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
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MPSA77G mpsa75-d.pdf
MPSA77G
Виробник: onsemi
Description: TRANS PNP DARL 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSA93G mpsa92-d.pdf
MPSA93G
Виробник: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MPSH10RLRAG mpsh10-d.pdf
MPSH10RLRAG
Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ TO-92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
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MPSW01AG mpsw01-d.pdf
MPSW01AG
Виробник: onsemi
Description: TRANS NPN 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW01G mpsw01-d.pdf
MPSW01G
Виробник: onsemi
Description: TRANS NPN 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Box
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MPSW05G mpsw05-d.pdf
MPSW05G
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW06RLRAG mpsw05-d.pdf
MPSW06RLRAG
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
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MPSW45AG mpsw45-d.pdf
MPSW45AG
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45G mpsw45-d.pdf
MPSW45G
Виробник: onsemi
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51AG mpsw51-d.pdf
MPSW51AG
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW63G mpsw63-d.pdf
MPSW63G
Виробник: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
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MPSW92G mpsw92-d.pdf
MPSW92G
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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Мінімальне замовлення: 5000 шт
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MR2535LRLG
MR2535LRLG
Виробник: onsemi
Description: TVS DIODE 20VWM MICRODE BUTTON
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 20V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
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MR2835SKG description MR2835SK-D.pdf
MR2835SKG
Виробник: onsemi
Description: TVS DIODE 23VWM TOP CAN
Part Status: Obsolete
Power Line Protection: No
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Top Can
Voltage - Reverse Standoff (Typ): 23V
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: Top Can
Packaging: Tape & Reel (TR)
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