| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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MJE700G | onsemi |
Description: TRANS PNP DARL 60V 4A TO-126Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJE702G | onsemi |
Description: TRANS PNP DARL 80V 4A TO126Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJE800G | onsemi |
Description: TRANS NPN DARL 60V 4A TO126Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4 A Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJE802G | onsemi |
Description: TRANS NPN DARL 80V 4A TO-126Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJE803G | onsemi |
Description: TRANS NPN DARL 80V 4A TO126Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJF122G | onsemi |
Description: TRANS NPN DARL 100V 5A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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MJF127G | onsemi |
Description: TRANS PNP DARL 100V 5A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
на замовлення 8396 шт: термін постачання 21-31 дні (днів) |
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MJF15030G | onsemi |
Description: TRANS NPN 150V 8A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V Frequency - Transition: 30MHz Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 2 W |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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MJF15031G | onsemi |
Description: TRANS PNP 150V 8A TO-220FPPower - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-220FP Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Current - Collector Cutoff (Max): 10µA Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A |
на замовлення 1941 шт: термін постачання 21-31 дні (днів) |
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MJF18004G | onsemi |
Description: TRANS NPN 450V 5A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V Frequency - Transition: 13MHz Supplier Device Package: TO-220FP Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 35 W |
на замовлення 1395 шт: термін постачання 21-31 дні (днів) |
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MJF3055G | onsemi |
Description: TRANS NPN 90V 10A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: TO-220FP Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 2 W |
на замовлення 4080 шт: термін постачання 21-31 дні (днів) |
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MJF44H11G | onsemi |
Description: TRANS NPN 80V 10A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-220FP Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
на замовлення 2107 шт: термін постачання 21-31 дні (днів) |
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MJF6388G | onsemi |
Description: TRANS NPN DARL 100V 10A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V Supplier Device Package: TO-220FP Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
на замовлення 2777 шт: термін постачання 21-31 дні (днів) |
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MJF6668G | onsemi |
Description: TRANS PNP DARL 100V 10A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJH11017G | onsemi |
Description: TRANS PNP DARL 150V 15A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-247-3 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 150 W |
на замовлення 346 шт: термін постачання 21-31 дні (днів) |
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MJH11019G | onsemi |
Description: TRANS PNP DARL 200V 15A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-247-3 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 150 W |
на замовлення 189 шт: термін постачання 21-31 дні (днів) |
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MJH11020G | onsemi |
Description: TRANS NPN DARL 200V 15A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-247-3 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 150 W |
на замовлення 212 шт: термін постачання 21-31 дні (днів) |
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MJH11021G | onsemi |
Description: TRANS PNP DARL 250V 15A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-247-3 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJH11022G | onsemi |
Description: TRANS NPN DARL 250V 15A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-247-3 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 150 W |
на замовлення 2828 шт: термін постачання 21-31 дні (днів) |
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MJH6284G | onsemi |
Description: TRANS NPN DARL 100V 20A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-247-3 Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 160 W |
на замовлення 186 шт: термін постачання 21-31 дні (днів) |
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MJH6287G | onsemi |
Description: TRANS PNP DARL 100V 20A TO-247-3Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 20 A Part Status: Active Supplier Device Package: TO-247-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 160 W |
на замовлення 2987 шт: термін постачання 21-31 дні (днів) |
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MJL1302AG | onsemi |
Description: TRANS PNP 260V 15A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-264 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 260 V Power - Max: 200 W |
на замовлення 1537 шт: термін постачання 21-31 дні (днів) |
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MJL21193G | onsemi |
Description: TRANS PNP 250V 16A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-264 Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 200 W |
на замовлення 967 шт: термін постачання 21-31 дні (днів) |
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MJL21194G | onsemi |
Description: TRANS NPN 250V 16A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-264 Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 200 W |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
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MJL21195G | onsemi |
Description: TRANS PNP 250V 16A TO-264Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 16 A Part Status: Active Supplier Device Package: TO-264 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJL21196G | onsemi |
Description: TRANS NPN 250V 16A TO-264Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 16 A Part Status: Active Supplier Device Package: TO-264 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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MJL3281AG | onsemi |
Description: TRANS NPN 260V 15A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-264 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 260 V Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJL4281AG | onsemi |
Description: TRANS NPN 350V 15A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V Frequency - Transition: 35MHz Supplier Device Package: TO-264 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 230 W |
на замовлення 202 шт: термін постачання 21-31 дні (днів) |
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MJL4302AG | onsemi |
Description: TRANS PNP 350V 15A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V Frequency - Transition: 35MHz Supplier Device Package: TO-264 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 230 W |
на замовлення 977 шт: термін постачання 21-31 дні (днів) |
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MM3Z12VST1G | onsemi |
Description: DIODE ZENER 12V 300MW SOD323Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-323 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
на замовлення 264000 шт: термін постачання 21-31 дні (днів) |
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MM3Z18VST1G | onsemi |
Description: DIODE ZENER 18V 300MW SOD323Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MM3Z6V2T1G | onsemi |
Description: DIODE ZENER 6.2V 300MW SOD323Current - Reverse Leakage @ Vr: 3 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MM5Z4V7ST1G | onsemi |
Description: DIODE ZENER 4.7V 500MW SOD523 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MM5Z5V1ST1G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD523Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MM5Z5V6ST1G | onsemi |
Description: DIODE ZENER 5.61V 500MW SOD523Current - Reverse Leakage @ Vr: 1 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Supplier Device Package: SOD-523 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 5.61 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: SC-79, SOD-523 Tolerance: ±2% Packaging: Tape & Reel (TR) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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MMBD101LT1G | onsemi |
Description: DIODE SCHOTTKY 7V 225MW SOT23-3Power Dissipation (Max): 225 mW Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 7V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Schottky - Single Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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MMBD2835LT1G | onsemi |
Description: DIODE ARRAY GP 35V 100MA SOT23-3Current - Reverse Leakage @ Vr: 100 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 35 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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MMBD2836LT1G | onsemi |
Description: DIODE ARRAY GP 75V 100MA SOT23-3Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 75 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns |
на замовлення 12379 шт: термін постачання 21-31 дні (днів) |
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MMBD2837LT1G | onsemi |
Description: DIODE ARRAY GP 30V 100MA SOT23-3Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 19236 шт: термін постачання 21-31 дні (днів) |
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MMBD2838LT1G | onsemi |
Description: DIODE ARRAY GP 50V 100MA SOT23-3Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 147141 шт: термін постачання 21-31 дні (днів) |
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MMBD301LT1G | onsemi |
Description: DIODE SCHOTTKY 30V 200MW SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power Dissipation (Max): 200 mW |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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MMBD352LT1G | onsemi |
Description: DIODE SCHOTTKY 7V 225MW SOT23-3Power Dissipation (Max): 225 mW Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 7V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Schottky - 1 Pair Series Connection Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MMBD353LT1G | onsemi |
Description: DIODE SCHOTTKY 7V 225MW SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 225 mW |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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MMBD354LT1G | onsemi |
Description: DIODE SCHOTTKY 7V 225MW SOT23-3Power Dissipation (Max): 225 mW Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 7V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Schottky - 1 Pair Common Cathode Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBD6050LT1G | onsemi |
Description: DIODE STANDARD 70V 200MA SOT233Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 70 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io): 200mA Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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MMBD6100LT1G | onsemi |
Description: DIODE ARRAY GP 70V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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MMBD7000LT1G | onsemi |
Description: DIODE ARR GP 100V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 100 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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MMBD701LT1G | onsemi |
Description: DIODE SCHOTTKY 70V 200MW SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Voltage - Peak Reverse (Max): 70V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power Dissipation (Max): 200 mW |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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MMBD717LT1G | onsemi |
Description: DIODE ARRAY SCHOTT 20V SC70-3Current - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SC-70-3 (SOT323) Diode Configuration: 1 Pair Common Anode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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MMBD914LT1G | onsemi |
Description: DIODE STANDARD 100V 200MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 231000 шт: термін постачання 21-31 дні (днів) |
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MMBF0201NLT1G | onsemi |
Description: MOSFET N-CH 20V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MMBF170LT1G | onsemi |
Description: MOSFET N-CH 60V 500MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MMBF2201NT1G | onsemi |
Description: MOSFET N-CH 20V 300MA SC70-3Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SC-70-3 (SOT323) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Part Status: Not For New Designs |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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MMBF4391LT1G | onsemi |
Description: JFET N-CH 30V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 225 mW Resistance - RDS(On): 30 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MMBF4392LT1G | onsemi |
Description: JFET N-CH 30V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 225 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MMBF4393LT1G | onsemi |
Description: JFET N-CH 30V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 225 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MMBF4416LT1G | onsemi |
Description: RF MOSFET JFET 30V SOT23-3Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Technology: JFET Configuration: N-Channel Mounting Type: Surface Mount Current Rating (Amps): 15mA Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF5457LT1G | onsemi |
Description: JFET N-CH 25V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF5460LT1G | onsemi |
Description: JFET P-CH 40V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF5484LT1G | onsemi |
Description: JFET N-CH 25V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MJE700G |
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Виробник: onsemi
Description: TRANS PNP DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS PNP DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MJE702G |
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Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS PNP DARL 80V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MJE800G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 60V 4A TO126
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TRANS NPN DARL 60V 4A TO126
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| MJE802G |
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Виробник: onsemi
Description: TRANS NPN DARL 80V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN DARL 80V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MJE803G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN DARL 80V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MJF122G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.67 грн |
| 50+ | 47.65 грн |
| 100+ | 42.44 грн |
| MJF127G |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 8396 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.21 грн |
| 50+ | 61.59 грн |
| 100+ | 55.10 грн |
| 500+ | 41.02 грн |
| 1000+ | 37.58 грн |
| 2000+ | 34.69 грн |
| 5000+ | 31.04 грн |
| MJF15030G |
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Виробник: onsemi
Description: TRANS NPN 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
Description: TRANS NPN 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 169.69 грн |
| 50+ | 79.58 грн |
| 100+ | 71.37 грн |
| 500+ | 53.47 грн |
| 1000+ | 49.12 грн |
| 2000+ | 45.47 грн |
| MJF15031G |
![]() |
Виробник: onsemi
Description: TRANS PNP 150V 8A TO-220FP
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220FP
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Collector Cutoff (Max): 10µA
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Description: TRANS PNP 150V 8A TO-220FP
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220FP
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Collector Cutoff (Max): 10µA
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
на замовлення 1941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.75 грн |
| 50+ | 99.25 грн |
| 100+ | 89.52 грн |
| 500+ | 67.98 грн |
| 1000+ | 62.83 грн |
| MJF18004G |
![]() |
Виробник: onsemi
Description: TRANS NPN 450V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 35 W
Description: TRANS NPN 450V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 35 W
на замовлення 1395 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.78 грн |
| 50+ | 96.87 грн |
| 100+ | 87.18 грн |
| 500+ | 65.86 грн |
| 1000+ | 60.73 грн |
| MJF3055G |
![]() |
Виробник: onsemi
Description: TRANS NPN 90V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 2 W
Description: TRANS NPN 90V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 2 W
на замовлення 4080 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.89 грн |
| 50+ | 79.58 грн |
| 100+ | 71.48 грн |
| 500+ | 53.74 грн |
| 1000+ | 49.46 грн |
| 2000+ | 45.85 грн |
| MJF44H11G |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 2107 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.02 грн |
| 50+ | 106.78 грн |
| 100+ | 96.39 грн |
| 500+ | 73.38 грн |
| 1000+ | 67.90 грн |
| 2000+ | 63.28 грн |
| MJF6388G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 2777 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.47 грн |
| 50+ | 92.19 грн |
| 100+ | 83.01 грн |
| 500+ | 62.80 грн |
| 1000+ | 57.94 грн |
| 2000+ | 53.86 грн |
| MJF6668G |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| MJH11017G |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 150V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 150 W
Description: TRANS PNP DARL 150V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 150 W
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.44 грн |
| 30+ | 267.91 грн |
| 120+ | 223.52 грн |
| MJH11019G |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
Description: TRANS PNP DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
на замовлення 189 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 437.70 грн |
| 30+ | 238.51 грн |
| 120+ | 198.14 грн |
| MJH11020G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
Description: TRANS NPN DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 492.41 грн |
| 30+ | 271.47 грн |
| 120+ | 227.01 грн |
| MJH11021G |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
Description: TRANS PNP DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
товару немає в наявності
В кошику
од. на суму грн.
| MJH11022G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
Description: TRANS NPN DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
на замовлення 2828 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 422.63 грн |
| 30+ | 230.75 грн |
| 120+ | 192.09 грн |
| 510+ | 153.68 грн |
| 1020+ | 149.30 грн |
| MJH6284G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
Description: TRANS NPN DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.19 грн |
| 30+ | 207.66 грн |
| 120+ | 172.35 грн |
| MJH6287G |
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Виробник: onsemi
Description: TRANS PNP DARL 100V 20A TO-247-3
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Supplier Device Package: TO-247-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 160 W
Description: TRANS PNP DARL 100V 20A TO-247-3
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Supplier Device Package: TO-247-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 160 W
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.22 грн |
| 30+ | 230.90 грн |
| 120+ | 191.83 грн |
| 510+ | 153.15 грн |
| 1020+ | 143.34 грн |
| 2010+ | 139.01 грн |
| MJL1302AG |
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Виробник: onsemi
Description: TRANS PNP 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
Description: TRANS PNP 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
на замовлення 1537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 482.89 грн |
| 25+ | 272.90 грн |
| 100+ | 227.16 грн |
| 500+ | 178.83 грн |
| 1000+ | 167.81 грн |
| MJL21193G |
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Виробник: onsemi
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 487.65 грн |
| 25+ | 276.44 грн |
| 100+ | 230.50 грн |
| 500+ | 181.84 грн |
| MJL21194G |
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Виробник: onsemi
Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 516.99 грн |
| 25+ | 293.60 грн |
| 100+ | 244.85 грн |
| MJL21195G |
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Виробник: onsemi
Description: TRANS PNP 250V 16A TO-264
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-264
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: TRANS PNP 250V 16A TO-264
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-264
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| MJL21196G |
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Виробник: onsemi
Description: TRANS NPN 250V 16A TO-264
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-264
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Description: TRANS NPN 250V 16A TO-264
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-264
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 428.18 грн |
| 25+ | 240.37 грн |
| 100+ | 199.38 грн |
| MJL3281AG |
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Виробник: onsemi
Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
товару немає в наявності
В кошику
од. на суму грн.
| MJL4281AG |
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Виробник: onsemi
Description: TRANS NPN 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
Description: TRANS NPN 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 547.91 грн |
| 25+ | 314.28 грн |
| 100+ | 263.52 грн |
| MJL4302AG |
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Виробник: onsemi
Description: TRANS PNP 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
Description: TRANS PNP 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 539.19 грн |
| 25+ | 309.00 грн |
| 100+ | 258.95 грн |
| 500+ | 208.75 грн |
| MM3Z12VST1G |
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Виробник: onsemi
Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 264000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.32 грн |
| 6000+ | 1.99 грн |
| MM3Z18VST1G |
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Виробник: onsemi
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MM3Z6V2T1G |
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Виробник: onsemi
Description: DIODE ZENER 6.2V 300MW SOD323
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 6.2V 300MW SOD323
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.24 грн |
| 6000+ | 1.92 грн |
| MM5Z4V7ST1G |
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Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD523
Description: DIODE ZENER 4.7V 500MW SOD523
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MM5Z5V1ST1G |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MM5Z5V6ST1G |
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Виробник: onsemi
Description: DIODE ZENER 5.61V 500MW SOD523
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.61 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 5.61V 500MW SOD523
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.61 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.97 грн |
| 6000+ | 1.77 грн |
| 9000+ | 1.69 грн |
| MMBD101LT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Power Dissipation (Max): 225 mW
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Power Dissipation (Max): 225 mW
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.30 грн |
| 6000+ | 3.07 грн |
| MMBD2835LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.07 грн |
| 6000+ | 2.49 грн |
| 9000+ | 2.18 грн |
| 15000+ | 1.93 грн |
| 21000+ | 1.92 грн |
| 30000+ | 1.77 грн |
| MMBD2836LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 75V 100MA SOT23-3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Description: DIODE ARRAY GP 75V 100MA SOT23-3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
на замовлення 12379 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.14 грн |
| 89+ | 3.44 грн |
| 119+ | 2.57 грн |
| 500+ | 1.98 грн |
| MMBD2837LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 30V 100MA SOT23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: DIODE ARRAY GP 30V 100MA SOT23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 19236 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.99 грн |
| 24+ | 13.13 грн |
| 100+ | 8.22 грн |
| 500+ | 5.69 грн |
| 1000+ | 5.03 грн |
| MMBD2838LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 50V 100MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 50V 100MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 147141 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.14 грн |
| 69+ | 4.43 грн |
| 100+ | 3.72 грн |
| 500+ | 2.53 грн |
| 1000+ | 2.18 грн |
| MMBD301LT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
Description: DIODE SCHOTTKY 30V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 6000+ | 1.72 грн |
| MMBD352LT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Power Dissipation (Max): 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Power Dissipation (Max): 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBD353LT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.56 грн |
| 6000+ | 2.37 грн |
| MMBD354LT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Power Dissipation (Max): 225 mW
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Power Dissipation (Max): 225 mW
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.68 грн |
| MMBD6050LT1G |
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Виробник: onsemi
Description: DIODE STANDARD 70V 200MA SOT233
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 70V 200MA SOT233
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.31 грн |
| 6000+ | 1.06 грн |
| 9000+ | 0.99 грн |
| 15000+ | 0.92 грн |
| MMBD6100LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.22 грн |
| 6000+ | 1.17 грн |
| 9000+ | 1.13 грн |
| 15000+ | 0.97 грн |
| 21000+ | 0.90 грн |
| MMBD7000LT1G |
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Виробник: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.94 грн |
| 6000+ | 1.66 грн |
| MMBD701LT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 70V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
Description: DIODE SCHOTTKY 70V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.09 грн |
| 6000+ | 1.00 грн |
| MMBD717LT1G |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTT 20V SC70-3
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SC-70-3 (SOT323)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 20V SC70-3
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SC-70-3 (SOT323)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.19 грн |
| 6000+ | 3.62 грн |
| 9000+ | 3.41 грн |
| 15000+ | 2.98 грн |
| 21000+ | 2.85 грн |
| 30000+ | 2.72 грн |
| MMBD914LT1G |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 231000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.71 грн |
| 6000+ | 1.46 грн |
| MMBF0201NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Description: MOSFET N-CH 20V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.54 грн |
| 6000+ | 3.94 грн |
| MMBF170LT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBF2201NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 300MA SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-70-3 (SOT323)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Description: MOSFET N-CH 20V 300MA SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-70-3 (SOT323)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.10 грн |
| 6000+ | 5.61 грн |
| 9000+ | 5.01 грн |
| 15000+ | 4.65 грн |
| MMBF4391LT1G |
![]() |
Виробник: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBF4392LT1G |
![]() |
Виробник: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBF4393LT1G |
![]() |
Виробник: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 225 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBF4416LT1G |
![]() |
Виробник: onsemi
Description: RF MOSFET JFET 30V SOT23-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Technology: JFET
Configuration: N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 15mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF MOSFET JFET 30V SOT23-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Technology: JFET
Configuration: N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 15mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MMBF5457LT1G |
![]() |
Виробник: onsemi
Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBF5460LT1G |
![]() |
Виробник: onsemi
Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBF5484LT1G |
![]() |
Виробник: onsemi
Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET N-CH 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.














