| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FSB50250AP | onsemi |
Description: SPM5 V2 INV 500V 3.8OHMPackaging: Tube |
на замовлення 20250 шт: термін постачання 21-31 дні (днів) |
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FCU3400N80Z | onsemi |
Description: MOSFET N-CH 800V 2A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP42B | onsemi |
Description: TRANS PNP 80V 6A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
на замовлення 13446 шт: термін постачання 21-31 дні (днів) |
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BZX79C47 | onsemi |
Description: DIODE ZENER 47V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MT9P006I12STCU-DP1 | onsemi |
Description: SENSOR IMAGE VGA 5MP CMOS 48LCCFrames per Second: 60.0 Active Pixel Array: 2592H x 1944V Pixel Size: 2.2µm x 2.2µm Voltage - Supply: 1.8V, 2.8V Operating Temperature: -30°C ~ 70°C Type: CMOS Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||||||||
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MT9P006I12STCUH-GEVB | onsemi |
Description: BOARD EVAL 5 MP 1/2.5" CIS HBSupplied Contents: Board(s) Utilized IC / Part: MT9P006 Sensor Type: Image Sensor Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KA3524 | onsemi |
Description: IC REG CTRLR MULT TOPOLOGY 16DIPNumber of Outputs: 1 Clock Sync: No Duty Cycle (Max): 45% Output Phases: 1 Control Features: Enable Synchronous Rectifier: No Supplier Device Package: 16-PDIP Voltage - Supply (Vcc/Vdd): 8V ~ 40V Topology: Buck, Flyback, Push-Pull Frequency - Switching: 350kHz Output Configuration: Positive, Isolation Capable Operating Temperature: 0°C ~ 70°C (TA) Function: Step-Down, Step-Up/Step-Down Mounting Type: Through Hole Output Type: Transistor Driver Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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HUFA76639P3 | onsemi |
Description: MOSFET N-CH 100V 51A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||||
| NCP303160AMNTWG | onsemi |
Description: INTEGRATED DRIVER AND MOSFET WITLoad Type: Inductive, Capacitive Fault Protection: Over Temperature, UVLO Supplier Device Package: 39-PQFN (5x6) Voltage - Load: 4.5V ~ 20V Technology: NMOS Current - Peak Output: 80A Current - Output / Channel: 60A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TA) Interface: PWM Mounting Type: Surface Mount Package / Case: 39-PowerVFQFN Features: Bootstrap Circuit Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV4269AD250R2G | onsemi |
Description: IC REG LINEAR 5V 150MA 14-SOICQualification: AEC-Q100 Current - Supply (Max): 3 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: 14-SOIC Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 250 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 362365 шт: термін постачання 21-31 дні (днів) |
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NCV4269ADW50G | onsemi |
Description: IC REG LINEAR 5V 150MA 20SOICQualification: AEC-Q100 Current - Supply (Max): 3 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: 20-SOIC Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 250 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 380 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCV4269D1R2G | onsemi |
Description: IC REG LINEAR 5V 150MA 8SOICQualification: AEC-Q100 Current - Supply (Max): 3 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: 8-SOIC Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 250 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV4269D1R2G | onsemi |
Description: IC REG LINEAR 5V 150MA 8SOICQualification: AEC-Q100 Current - Supply (Max): 3 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: 8-SOIC Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 250 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV4269D2R2G | onsemi |
Description: IC REG LINEAR 5V 150MA 14SOICQualification: AEC-Q100 Current - Supply (Max): 3 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: 14-SOIC Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 250 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV4269DWR2G | onsemi |
Description: IC REG LINEAR 5V 150MA 20SOICQualification: AEC-Q100 Current - Supply (Max): 3 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA Grade: Automotive Control Features: Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: 20-SOIC Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 250 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| P3P23F01EG-08TR | onsemi |
Description: 2-130MHZ 2.5V/3.3V GP EMI Packaging: Bulk |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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ADT7483AARQZ-R7 | onsemi |
Description: SENSOR DIGITAL 0C-127C 16QSOPSensing Temperature - Remote: -64°C ~ 191°C Sensing Temperature - Local: 0°C ~ 127°C Accuracy - Highest (Lowest): ±1°C (±2.5°C) Test Condition: 0°C ~ 70°C (-40°C ~ 100°C) Supplier Device Package: 16-QSOP Sensor Type: Digital, Local/Remote Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: SMBus Package / Case: 16-SSOP (0.154", 3.90mm Width) Features: One-Shot, Output Switch, Programmable Limit, Standby Mode Packaging: Bulk |
на замовлення 11841 шт: термін постачання 21-31 дні (днів) |
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FAN4147SX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOTPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C Applications: Ground Fault Protection Current - Supply: 400µA Supplier Device Package: SuperSOT™-6 |
на замовлення 62394 шт: термін постачання 21-31 дні (днів) |
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FDG327NZ | onsemi |
Description: MOSFET N-CH 20V 1.5A SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDG327NZ | onsemi |
Description: MOSFET N-CH 20V 1.5A SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX85C36 | onsemi |
Description: DIODE ZENER 36V 1W DO41Tolerance: ±6% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSR20406NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 2A 2DSNPackaging: Bulk Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 53 ns Technology: Schottky Capacitance @ Vr, F: 140pF @ 2V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 2-DSN (1.6x0.8) Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVTS12120EMFST1G | onsemi |
Description: DIODE SCHOTTKY 120V 12A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A Current - Reverse Leakage @ Vr: 55 µA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NRVTS12120EMFST1G | onsemi |
Description: DIODE SCHOTTKY 120V 12A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A Current - Reverse Leakage @ Vr: 55 µA @ 120 V Qualification: AEC-Q101 |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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FQU3N40TU | onsemi |
Description: MOSFET N-CH 400V 2A IPAKInput Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 5040 шт В кошику од. на суму грн. | ||||||||||||||||||
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FQD3N40TF | onsemi |
Description: MOSFET N-CH 400V 2A DPAKInput Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMDF3N02HDR2 | onsemi |
Description: MOSFET N-CH 20V 3.8A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
на замовлення 16012 шт: термін постачання 21-31 дні (днів) |
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| NTH4LN041N60S5H | onsemi |
Description: MOSFETPOWER, SINGLE, N-CHANNEL,Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.7mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6213 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MCH4016-TL-H | onsemi |
Description: RF TRANS NPN 12V 10GHZ 4-MCPHPackaging: Bulk Package / Case: SOT-343F Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 18dB Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: 4-MCPH |
на замовлення 174000 шт: термін постачання 21-31 дні (днів) |
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TIP50 | onsemi |
Description: TRANS NPN 400V 1A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHC257DTG | onsemi |
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPSupplier Device Package: 16-TSSOP Voltage Supply Source: Single Supply Current - Output High, Low: 8mA, 8mA Independent Circuits: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Multiplexer Circuit: 4 x 2:1 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
на замовлення 61380 шт: термін постачання 21-31 дні (днів) |
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FAN7392N | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-MDIP Rise / Fall Time (Typ): 25ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 4.5V, 9.5V Current - Peak Output (Source, Sink): 3A, 3A DigiKey Programmable: Not Verified |
на замовлення 608 шт: термін постачання 21-31 дні (днів) |
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1N4002G | onsemi |
Description: DIODE STANDARD 100V 1A AXIALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 61164 шт: термін постачання 21-31 дні (днів) |
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NSVBCP5316MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNWPackaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP5316MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNWPackaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW |
на замовлення 2961 шт: термін постачання 21-31 дні (днів) |
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NVD5890NT4G-VF01 | onsemi |
Description: POWER MOSFET 40V, 123A, 3.7 MOHMQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 4W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVD5805NT4G-VF01 | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SVD5867NLT4G-UM | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 60Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDU5N50NZTU | onsemi |
Description: MOSFET N-CH 500V 4A DPAK3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK3 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
на замовлення 13509 шт: термін постачання 21-31 дні (днів) |
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NRVBA320NT3G | onsemi |
Description: DIODE SCHOTTKY 20V 3A SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 20 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NRVBA320NT3G | onsemi |
Description: DIODE SCHOTTKY 20V 3A SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 20 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFS5C404NLWFET3G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVBG023N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 23MOHM 650V M3SPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVBG023N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 23MOHM 650V M3SPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 1590 шт: термін постачання 21-31 дні (днів) |
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NXH010P90MNF1PTG | onsemi |
Description: MOSFET 2N-CH 900V 154APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 328W (Tj) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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NXH010P120MNF1PTG | onsemi |
Description: MOSFET 2N-CH 1200V 114APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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TN6714A | onsemi |
Description: TRANS NPN 30V 2A TO226-3Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-226-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMJS1D7N04CTWG | onsemi |
Description: MOSFET N-CH 40V 35A/185A 8LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMJS1D7N04CTWG | onsemi |
Description: MOSFET N-CH 40V 35A/185A 8LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) |
на замовлення 2913 шт: термін постачання 21-31 дні (днів) |
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FQA13N50C | onsemi |
Description: MOSFET N-CH 500V 13.5A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MB6S | onsemi |
Description: BRIDGE RECT 1P 600V 500MA 4-SOICPackaging: Tape & Reel (TR) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1689000 шт: термін постачання 21-31 дні (днів) |
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MB6S | onsemi |
Description: BRIDGE RECT 1P 600V 500MA 4-SOICPackaging: Cut Tape (CT) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1690444 шт: термін постачання 21-31 дні (днів) |
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NLV74LCX00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPQualification: AEC-Q100 Current - Quiescent (Max): 10 µA Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NLV74LCX00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPQualification: AEC-Q100 Current - Quiescent (Max): 10 µA Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2050 шт: термін постачання 21-31 дні (днів) |
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74LCX00SJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOPCurrent - Quiescent (Max): 10 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-SOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LCX00SJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOPCurrent - Quiescent (Max): 10 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-SOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC32ADR2G-Q | onsemi |
Description: QUAD OR GATECurrent - Quiescent (Max): 1 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 14-SOIC Number of Inputs: 2 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -55°C ~ 125°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FAN1616AD25X | onsemi |
Description: IC REG LINEAR 2.5V 500MA TO252AAProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 1.2V @ 500mA PSRR: 72dB (120Hz) Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: TO-252AA Number of Regulators: 1 Voltage - Input (Max): 18V Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NLX1G10BMX1TCG | onsemi |
Description: IC GATE NAND 1CH 3-INP 6ULLGACurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Supplier Device Package: 6-ULLGA (1.2x1) Number of Inputs: 3 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 6-XFLGA Packaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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NC7SVL04L6X | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAKPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 6-MicroPak Input Logic Level - High: 0.9V ~ 1.5V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 900 nA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| FSB50250AP |
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на замовлення 20250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 605.00 грн |
| 10+ | 398.43 грн |
| 270+ | 264.73 грн |
| 540+ | 242.23 грн |
| FCU3400N80Z |
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Виробник: onsemi
Description: MOSFET N-CH 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
Description: MOSFET N-CH 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| TIP42B |
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Виробник: onsemi
Description: TRANS PNP 80V 6A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 6A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 13446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 466+ | 43.13 грн |
| BZX79C47 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
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| MT9P006I12STCU-DP1 |
![]() |
Виробник: onsemi
Description: SENSOR IMAGE VGA 5MP CMOS 48LCC
Frames per Second: 60.0
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Voltage - Supply: 1.8V, 2.8V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Packaging: Tray
Description: SENSOR IMAGE VGA 5MP CMOS 48LCC
Frames per Second: 60.0
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Voltage - Supply: 1.8V, 2.8V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Packaging: Tray
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Мінімальне замовлення: 240 шт
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| MT9P006I12STCUH-GEVB |
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Виробник: onsemi
Description: BOARD EVAL 5 MP 1/2.5" CIS HB
Supplied Contents: Board(s)
Utilized IC / Part: MT9P006
Sensor Type: Image Sensor
Packaging: Bulk
Description: BOARD EVAL 5 MP 1/2.5" CIS HB
Supplied Contents: Board(s)
Utilized IC / Part: MT9P006
Sensor Type: Image Sensor
Packaging: Bulk
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| KA3524 |
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Виробник: onsemi
Description: IC REG CTRLR MULT TOPOLOGY 16DIP
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 45%
Output Phases: 1
Control Features: Enable
Synchronous Rectifier: No
Supplier Device Package: 16-PDIP
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Topology: Buck, Flyback, Push-Pull
Frequency - Switching: 350kHz
Output Configuration: Positive, Isolation Capable
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Down, Step-Up/Step-Down
Mounting Type: Through Hole
Output Type: Transistor Driver
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC REG CTRLR MULT TOPOLOGY 16DIP
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 45%
Output Phases: 1
Control Features: Enable
Synchronous Rectifier: No
Supplier Device Package: 16-PDIP
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Topology: Buck, Flyback, Push-Pull
Frequency - Switching: 350kHz
Output Configuration: Positive, Isolation Capable
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Down, Step-Up/Step-Down
Mounting Type: Through Hole
Output Type: Transistor Driver
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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Мінімальне замовлення: 1500 шт
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| HUFA76639P3 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 51A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 51A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 400 шт
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| NCP303160AMNTWG |
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Виробник: onsemi
Description: INTEGRATED DRIVER AND MOSFET WIT
Load Type: Inductive, Capacitive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 39-PQFN (5x6)
Voltage - Load: 4.5V ~ 20V
Technology: NMOS
Current - Peak Output: 80A
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Features: Bootstrap Circuit
Packaging: Bulk
Description: INTEGRATED DRIVER AND MOSFET WIT
Load Type: Inductive, Capacitive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 39-PQFN (5x6)
Voltage - Load: 4.5V ~ 20V
Technology: NMOS
Current - Peak Output: 80A
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Features: Bootstrap Circuit
Packaging: Bulk
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| NCV4269AD250R2G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 14-SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 14-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 150MA 14-SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 14-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 362365 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 112.60 грн |
| 10+ | 79.41 грн |
| 25+ | 72.11 грн |
| 100+ | 60.19 грн |
| 250+ | 56.62 грн |
| 500+ | 54.47 грн |
| 1000+ | 51.84 грн |
| NCV4269ADW50G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 20SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 20-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: IC REG LINEAR 5V 150MA 20SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 20-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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Мінімальне замовлення: 380 шт
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| NCV4269D1R2G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 5V 150MA 8SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| NCV4269D1R2G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 150MA 8SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| NCV4269D2R2G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 14SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 14-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 5V 150MA 14SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 14-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| NCV4269DWR2G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 20SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 20-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 5V 150MA 20SOIC
Qualification: AEC-Q100
Current - Supply (Max): 3 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
Grade: Automotive
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 20-SOIC
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 250 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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| P3P23F01EG-08TR |
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 430+ | 51.59 грн |
| ADT7483AARQZ-R7 |
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Виробник: onsemi
Description: SENSOR DIGITAL 0C-127C 16QSOP
Sensing Temperature - Remote: -64°C ~ 191°C
Sensing Temperature - Local: 0°C ~ 127°C
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Supplier Device Package: 16-QSOP
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Bulk
Description: SENSOR DIGITAL 0C-127C 16QSOP
Sensing Temperature - Remote: -64°C ~ 191°C
Sensing Temperature - Local: 0°C ~ 127°C
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Supplier Device Package: 16-QSOP
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Bulk
на замовлення 11841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 75+ | 298.50 грн |
| FAN4147SX |
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Виробник: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
на замовлення 62394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 669+ | 33.96 грн |
| FDG327NZ |
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Виробник: onsemi
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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| FDG327NZ |
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Виробник: onsemi
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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| BZX85C36 |
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Виробник: onsemi
Description: DIODE ZENER 36V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE ZENER 36V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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| NSR20406NXT5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 2V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 2V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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| NRVTS12120EMFST1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
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Мінімальне замовлення: 1500 шт
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| NRVTS12120EMFST1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.32 грн |
| 10+ | 63.53 грн |
| 100+ | 44.39 грн |
| 500+ | 33.62 грн |
| FQU3N40TU |
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Виробник: onsemi
Description: MOSFET N-CH 400V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 400V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Мінімальне замовлення: 5040 шт
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| FQD3N40TF |
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Виробник: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 400V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2000 шт
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| MMDF3N02HDR2 |
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Виробник: onsemi
Description: MOSFET N-CH 20V 3.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: MOSFET N-CH 20V 3.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
на замовлення 16012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 452+ | 48.64 грн |
| NTH4LN041N60S5H |
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Виробник: onsemi
Description: MOSFETPOWER, SINGLE, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6213 pF @ 400 V
Description: MOSFETPOWER, SINGLE, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6213 pF @ 400 V
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| MCH4016-TL-H |
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Виробник: onsemi
Description: RF TRANS NPN 12V 10GHZ 4-MCPH
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 4-MCPH
Description: RF TRANS NPN 12V 10GHZ 4-MCPH
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 4-MCPH
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1428+ | 14.28 грн |
| TIP50 |
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Виробник: onsemi
Description: TRANS NPN 400V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Description: TRANS NPN 400V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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| MC74VHC257DTG |
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Виробник: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
на замовлення 61380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1343+ | 16.70 грн |
| FAN7392N |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-MDIP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.5V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-MDIP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.5V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 135.59 грн |
| 10+ | 96.36 грн |
| 25+ | 87.75 грн |
| 100+ | 73.54 грн |
| 250+ | 69.33 грн |
| 500+ | 66.79 грн |
| 1N4002G |
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Виробник: onsemi
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 61164 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.44 грн |
| 31+ | 10.16 грн |
| 100+ | 6.31 грн |
| 500+ | 4.35 грн |
| 1000+ | 3.84 грн |
| 2000+ | 3.41 грн |
| 5000+ | 2.89 грн |
| 10000+ | 2.61 грн |
| 50000+ | 2.11 грн |
| NSVBCP5316MTWG |
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Виробник: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
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| BCP5316MTWG |
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Виробник: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
на замовлення 2961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 53.92 грн |
| 10+ | 31.99 грн |
| 100+ | 20.65 грн |
| 500+ | 14.79 грн |
| 1000+ | 13.31 грн |
| NVD5890NT4G-VF01 |
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Виробник: onsemi
Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| NVD5805NT4G-VF01 |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| SVD5867NLT4G-UM |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: SINGLE N-CHANNEL POWER MOSFET 60
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| FDU5N50NZTU |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 13509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 620+ | 35.38 грн |
| NRVBA320NT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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| NRVBA320NT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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| NVMFS5C404NLWFET3G |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
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| NVBG023N065M3S |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 532.44 грн |
| NVBG023N065M3S |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1018.91 грн |
| 10+ | 691.48 грн |
| 100+ | 627.56 грн |
| NXH010P90MNF1PTG |
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Виробник: onsemi
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 9255.86 грн |
| 28+ | 7808.69 грн |
| NXH010P120MNF1PTG |
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Виробник: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 8585.04 грн |
| 28+ | 7134.85 грн |
| TN6714A |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 2A TO226-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-226-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 30V 2A TO226-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-226-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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| NVMJS1D7N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NVMJS1D7N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
на замовлення 2913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 168.10 грн |
| 10+ | 103.92 грн |
| 100+ | 71.00 грн |
| 500+ | 53.40 грн |
| 1000+ | 52.61 грн |
| FQA13N50C |
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Виробник: onsemi
Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
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| MB6S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1689000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.72 грн |
| 6000+ | 10.34 грн |
| MB6S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1690444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 32.22 грн |
| 100+ | 20.78 грн |
| 500+ | 14.85 грн |
| 1000+ | 13.35 грн |
| NLV74LCX00DTR2G |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NLV74LCX00DTR2G |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.71 грн |
| 10+ | 45.13 грн |
| 25+ | 37.45 грн |
| 100+ | 26.99 грн |
| 250+ | 22.98 грн |
| 500+ | 20.51 грн |
| 1000+ | 18.14 грн |
| 74LCX00SJX |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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| 74LCX00SJX |
![]() |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
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| MC74HC32ADR2G-Q |
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Виробник: onsemi
Description: QUAD OR GATE
Current - Quiescent (Max): 1 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOIC
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: QUAD OR GATE
Current - Quiescent (Max): 1 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOIC
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| FAN1616AD25X |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA TO252AA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 500mA
PSRR: 72dB (120Hz)
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: TO-252AA
Number of Regulators: 1
Voltage - Input (Max): 18V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.5V 500MA TO252AA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 500mA
PSRR: 72dB (120Hz)
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: TO-252AA
Number of Regulators: 1
Voltage - Input (Max): 18V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| NLX1G10BMX1TCG |
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Виробник: onsemi
Description: IC GATE NAND 1CH 3-INP 6ULLGA
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-ULLGA (1.2x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Bulk
Description: IC GATE NAND 1CH 3-INP 6ULLGA
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-ULLGA (1.2x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Bulk
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2959+ | 7.37 грн |
| NC7SVL04L6X |
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Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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Мінімальне замовлення: 5000 шт
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