| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTMFS4C908NAT3G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| NTMFS4C906NBT1G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| NTMFS4C906NBT1G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Cut Tape (CT) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| NTMFS4C906NBT3G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| NTMFS4C908NAT1G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Tape & Reel (TR) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
 |
NC7WP14P6X | onsemi |
 Description: IC INVERT SCHMITT 2CH 2-INP SC88Current - Quiescent (Max): 900 nA Number of Circuits: 2 Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF Input Logic Level - Low: 0.1V ~ 0.6V Input Logic Level - High: 0.65V ~ 2.6V Supplier Device Package: SC-88 (SC-70-6) Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
MMBV3401LT3G | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Power Dissipation (Max): 200 mW Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 700mOhm @ 10mA, 100MHz Capacitance @ Vr, F: 1pF @ 20V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
UJ3C120070K3S | onsemi |
Description: SICFET N-CH 1200V 34.5A TO247-3 Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) |
на замовлення 567 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UF3C120080K3S | onsemi |
Description: SICFET N-CH 1200V 33A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 11404 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UF3C120080K4S | onsemi |
Description: SICFET N-CH 1200V 33A TO247-4 Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 6V @ 10mA Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| UJ3C120070K4S | onsemi |
Description: 1200V/70MOHM, N-OFF SIC CASCODE, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||||||||
|
|
NC7SZ19P6X | onsemi |
Description: IC DECODER/DEMUX 1 X 1:2 SC-88 Supplier Device Package: SC-88 (SC-70-6) Voltage Supply Source: Single Supply Current - Output High, Low: 32mA, 32mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Decoder/Demultiplexer Circuit: 1 x 1:2 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NC7SZ19P6X | onsemi |
Description: IC DECODER/DEMUX 1 X 1:2 SC-88 Voltage Supply Source: Single Supply Current - Output High, Low: 32mA, 32mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Decoder/Demultiplexer Circuit: 1 x 1:2 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SC-88 (SC-70-6) |
на замовлення 48333 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UJ3N065080K3S | onsemi |
Description: JFET N-CH 650V 32A TO247-3 Resistance - RDS(On): 95 mOhms Power - Max: 190 W Drain to Source Voltage (Vdss): 650 V Supplier Device Package: TO-247-3 Current Drain (Id) - Max: 32 A Voltage - Breakdown (V(BR)GSS): 650 V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 622 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UF3N170400B7S | onsemi |
Description: JFET N-CH 1.7KV 6.8A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Voltage - Breakdown (V(BR)GSS): 1700 V Current Drain (Id) - Max: 6.8 A Supplier Device Package: D2PAK-7 Drain to Source Voltage (Vdss): 1700 V Power - Max: 68 W Resistance - RDS(On): 500 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UF3N170400B7S | onsemi |
Description: JFET N-CH 1.7KV 6.8A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Voltage - Breakdown (V(BR)GSS): 1700 V Current Drain (Id) - Max: 6.8 A Supplier Device Package: D2PAK-7 Drain to Source Voltage (Vdss): 1700 V Power - Max: 68 W Resistance - RDS(On): 500 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V |
на замовлення 3327 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UJ3N120070K3S | onsemi |
Description: JFET N-CH 1200V 33.5A TO247-3 Resistance - RDS(On): 90 mOhms Power - Max: 254 W Drain to Source Voltage (Vdss): 1200 V Supplier Device Package: TO-247-3 Current Drain (Id) - Max: 33.5 A Voltage - Breakdown (V(BR)GSS): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 1553 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UJ4C075023K4S | onsemi |
Description: 750V/23MOHM, SIC, CASCODE, G4, T Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
на замовлення 13515 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UJ3N120065K3S | onsemi |
Description: JFET N-CH 1.2KV 34A TO247-3 Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V Resistance - RDS(On): 55 mOhms Power - Max: 254 W Drain to Source Voltage (Vdss): 1200 V Supplier Device Package: TO-247-3 Current Drain (Id) - Max: 34 A Voltage - Breakdown (V(BR)GSS): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 2561 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UJ4C075018K3S | onsemi |
Description: SICFET N-CH 750V 81A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V |
на замовлення 3457 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UJ4SC075011K4S | onsemi |
Description: 750V/11MOHM, SIC, STACKED CASCOD Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
на замовлення 2271 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UJ4SC075009K4S | onsemi |
Description: 750V/9MOHM, SIC, STACKED CASCODE Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 5.5V @ 10mA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V |
на замовлення 422 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UJ3N120035K3S | onsemi |
Description: JFET N-CH 1200V 63A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V Voltage - Breakdown (V(BR)GSS): 1200 V Current Drain (Id) - Max: 63 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1200 V Power - Max: 429 W Resistance - RDS(On): 45 mOhms |
на замовлення 5538 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UJ4SC075006K4S | onsemi |
Description: 750V/6MOHM, SIC, STACKED CASCODE Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 714W (Tc) |
на замовлення 647 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UF3SC120009K4S | onsemi |
Description: SICFET N-CH 1200V 120A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V |
на замовлення 1528 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UF3SC065007K4S | onsemi |
Description: MOSFET N-CH 650V 120A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V |
на замовлення 494 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FAN4174IP5X | onsemi |
Description: IC OPAMP VFB 1 CIRCUIT SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 8 mV Supplier Device Package: SC-70-5 Number of Circuits: 1 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
NCP81102MNTXG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
NCP81102MNTXG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
NCP81102MNTWG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MC74AC153DR2 | onsemi |
Description: MUX 1-ELEMENT 8-IN 16-PIN SOIC Packaging: Bulk |
на замовлення 3439 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
MC74ACT151DR2 | onsemi |
Description: MUX 1-ELEMENT 8-IN 16-PIN SOIC Packaging: Bulk |
на замовлення 56363 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
1N4447TR | onsemi |
Description: DIODE STANDARD 100V DO35 Packaging: Tape & Reel (TR) Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Voltage - DC Reverse (Vr) (Max): 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FDMS9408-F085 | onsemi |
Description: MOSFET N-CH 40V 80A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDMS9408L-F085 | onsemi |
Description: MOSFET N-CH 40V 80A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FDS4070N3 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
FDS4070N3 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDS4070N7 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDS4070N7 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
KSC1507YTU | onsemi |
Description: TRANS NPN 300V 200UA TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V Frequency - Transition: 80MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 200 µA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
NLA9306USG | onsemi |
Description: IC XLTR VL BIDIR US8 Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NLA9306USG | onsemi |
Description: IC XLTR VL BIDIR US8 Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 15769 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NCV57085DR2G | onsemi |
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V Qualification: AEC-Q100 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NCV57085DR2G | onsemi |
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V Qualification: AEC-Q100 |
на замовлення 13990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NSVMUN5216T1G | onsemi |
Description: NPN BIPOLAR DIGITAL TRANSISTOR ( Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NSVMUN5216T1G | onsemi |
Description: NPN BIPOLAR DIGITAL TRANSISTOR ( Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
AR0234CSSC00SUKA0-CP1 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Bulk Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
AR0234CSSM00SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
AR0234CSSM28SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tube Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
AR0234CSSC28SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
AR0234CSSC00SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
| AR0234CSSM00SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR0234CSSC28SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR0234CSSM28SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
|
AR0234CSSC00SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AR0234AT3M28XUEA0-DRBR-E | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Grade: Automotive Frames per Second: 120.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
FFSH2065BDN | onsemi |
Description: DIODE ARRAY SIC 650V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 33768 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FFSH2065B-F155 | onsemi |
Description: DIODE SIL CARB 650V 22.3A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 22.3A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 575 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
RFP15N05L | onsemi |
Description: MOSFET N-CH 50V 15A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
 |
NL7SZ19DFT2G-Q | onsemi |
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: SC-88/SC70-6/SOT-363 Voltage Supply Source: Single Supply Current - Output High, Low: 32mA, 32mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Decoder/Demultiplexer Circuit: 1 x 1:2 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 186000 шт: термін постачання 21-31 дні (днів) |
|
| NTMFS4C908NAT3G |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.31 грн |
| 10+ | 35.89 грн |
| 100+ | 23.20 грн |
| 500+ | 16.66 грн |
| 1000+ | 15.01 грн |
| 2000+ | 13.62 грн |
| NTMFS4C906NBT1G |
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 16.92 грн |
| NTMFS4C906NBT1G |
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.17 грн |
| 10+ | 38.42 грн |
| 100+ | 24.93 грн |
| 500+ | 17.95 грн |
| NTMFS4C906NBT3G |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 25.84 грн |
| NTMFS4C908NAT1G |
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 25.93 грн |
| 3000+ | 22.96 грн |
| 4500+ | 21.94 грн |
| NC7WP14P6X |
|
Виробник: onsemi
Description: IC INVERT SCHMITT 2CH 2-INP SC88
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.6V
Input Logic Level - High: 0.65V ~ 2.6V
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT SCHMITT 2CH 2-INP SC88
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.6V
Input Logic Level - High: 0.65V ~ 2.6V
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 807 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.76 грн |
| 10+ | 34.40 грн |
| 25+ | 28.41 грн |
| 100+ | 20.34 грн |
| 250+ | 17.24 грн |
| 500+ | 15.33 грн |
| MMBV3401LT3G |
|
Виробник: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| UJ3C120070K3S |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 34.5A TO247-3
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Description: SICFET N-CH 1200V 34.5A TO247-3
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1159.77 грн |
| 30+ | 784.78 грн |
| UF3C120080K3S |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 33A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 33A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 11404 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1122.66 грн |
| 30+ | 716.20 грн |
| UF3C120080K4S |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1200V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1321.37 грн |
| 30+ | 799.10 грн |
| 120+ | 717.02 грн |
| UJ3C120070K4S |
|
Виробник: onsemi
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| NC7SZ19P6X |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Supplier Device Package: SC-88 (SC-70-6)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Supplier Device Package: SC-88 (SC-70-6)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.74 грн |
| 6000+ | 3.21 грн |
| 9000+ | 3.01 грн |
| 15000+ | 2.62 грн |
| 21000+ | 2.50 грн |
| 30000+ | 2.38 грн |
| NC7SZ19P6X |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
на замовлення 48333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.96 грн |
| 68+ | 4.39 грн |
| 78+ | 3.84 грн |
| 100+ | 3.03 грн |
| 250+ | 2.76 грн |
| 500+ | 2.59 грн |
| 1000+ | 2.41 грн |
| UJ3N065080K3S |
|
Виробник: onsemi
Description: JFET N-CH 650V 32A TO247-3
Resistance - RDS(On): 95 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 32 A
Voltage - Breakdown (V(BR)GSS): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: JFET N-CH 650V 32A TO247-3
Resistance - RDS(On): 95 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 32 A
Voltage - Breakdown (V(BR)GSS): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 680.40 грн |
| 30+ | 409.00 грн |
| 120+ | 390.21 грн |
| 510+ | 348.03 грн |
| UF3N170400B7S |
|
Виробник: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 330.40 грн |
| UF3N170400B7S |
|
Виробник: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
на замовлення 3327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 702.05 грн |
| 10+ | 467.05 грн |
| 100+ | 389.43 грн |
| UJ3N120070K3S |
|
Виробник: onsemi
Description: JFET N-CH 1200V 33.5A TO247-3
Resistance - RDS(On): 90 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 33.5 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: JFET N-CH 1200V 33.5A TO247-3
Resistance - RDS(On): 90 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 33.5 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1553 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1312.09 грн |
| 30+ | 793.16 грн |
| 120+ | 711.71 грн |
| UJ4C075023K4S |
|
Виробник: onsemi
Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
на замовлення 13515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 821.12 грн |
| 30+ | 473.41 грн |
| 120+ | 403.87 грн |
| 510+ | 333.43 грн |
| UJ3N120065K3S |
|
Виробник: onsemi
Description: JFET N-CH 1.2KV 34A TO247-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
Resistance - RDS(On): 55 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 34 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: JFET N-CH 1.2KV 34A TO247-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
Resistance - RDS(On): 55 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 34 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1408.74 грн |
| 30+ | 856.72 грн |
| 120+ | 778.11 грн |
| UJ4C075018K3S |
|
Виробник: onsemi
Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
на замовлення 3457 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 904.62 грн |
| 30+ | 525.77 грн |
| 120+ | 450.16 грн |
| 510+ | 378.17 грн |
| UJ4SC075011K4S |
|
Виробник: onsemi
Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
на замовлення 2271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1323.69 грн |
| 30+ | 801.93 грн |
| 120+ | 722.90 грн |
| UJ4SC075009K4S |
|
Виробник: onsemi
Description: 750V/9MOHM, SIC, STACKED CASCODE
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Description: 750V/9MOHM, SIC, STACKED CASCODE
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
на замовлення 422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2729.33 грн |
| 30+ | 1759.44 грн |
| UJ3N120035K3S |
|
Виробник: onsemi
Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
на замовлення 5538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2439.39 грн |
| 30+ | 1547.69 грн |
| 120+ | 1429.69 грн |
| UJ4SC075006K4S |
|
Виробник: onsemi
Description: 750V/6MOHM, SIC, STACKED CASCODE
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 714W (Tc)
Description: 750V/6MOHM, SIC, STACKED CASCODE
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 714W (Tc)
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3462.31 грн |
| 30+ | 2397.81 грн |
| UF3SC120009K4S |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
на замовлення 1528 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4565.64 грн |
| 30+ | 3101.55 грн |
| UF3SC065007K4S |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4774.40 грн |
| 30+ | 3566.84 грн |
| FAN4174IP5X |
|
Виробник: onsemi
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
товару немає в наявності
В кошику
од. на суму грн.
| NCP81102MNTXG |
Виробник: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| NCP81102MNTXG |
Виробник: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| NCP81102MNTWG |
Виробник: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| MC74AC153DR2 |
|
на замовлення 3439 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1397+ | 13.93 грн |
| MC74ACT151DR2 |
|
на замовлення 56363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 956+ | 20.56 грн |
| 1N4447TR |
|
Виробник: onsemi
Description: DIODE STANDARD 100V DO35
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE STANDARD 100V DO35
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max): 100 V
товару немає в наявності
В кошику
од. на суму грн.
| FDMS9408-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FDMS9408L-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FDS4070N3 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FDS4070N3 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FDS4070N7 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FDS4070N7 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| KSC1507YTU |
|
Виробник: onsemi
Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
товару немає в наявності
В кошику
од. на суму грн.
| NLA9306USG |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.31 грн |
| 6000+ | 7.77 грн |
| NLA9306USG |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
на замовлення 15769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.33 грн |
| 23+ | 13.25 грн |
| 26+ | 11.79 грн |
| 100+ | 9.52 грн |
| 250+ | 8.78 грн |
| 500+ | 8.33 грн |
| 1000+ | 7.84 грн |
| NCV57085DR2G |
|
Виробник: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 56.23 грн |
| 5000+ | 53.46 грн |
| NCV57085DR2G |
|
Виробник: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.48 грн |
| 10+ | 121.36 грн |
| 25+ | 102.84 грн |
| 100+ | 76.81 грн |
| 250+ | 67.13 грн |
| 500+ | 61.18 грн |
| 1000+ | 55.27 грн |
| NSVMUN5216T1G |
|
Виробник: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.83 грн |
| 6000+ | 2.43 грн |
| 9000+ | 2.28 грн |
| 15000+ | 1.98 грн |
| 21000+ | 1.89 грн |
| 30000+ | 1.80 грн |
| 75000+ | 1.57 грн |
| NSVMUN5216T1G |
|
Виробник: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.92 грн |
| AR0234CSSC00SUKA0-CP1 |
|
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 3452.92 грн |
| AR0234CSSM00SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| AR0234CSSM28SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| AR0234CSSC28SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| AR0234CSSC00SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| AR0234CSSM00SUD20 |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0234CSSC28SUD20 |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0234CSSM28SUD20 |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0234CSSC00SUD20 |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0234AT3M28XUEA0-DRBR-E |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Grade: Automotive
Frames per Second: 120.0
Qualification: AEC-Q100
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Grade: Automotive
Frames per Second: 120.0
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| FFSH2065BDN |
|
Виробник: onsemi
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 33768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 354.89 грн |
| 10+ | 226.94 грн |
| 450+ | 135.39 грн |
| 900+ | 118.45 грн |
| 1350+ | 114.06 грн |
| 2250+ | 109.14 грн |
| 5400+ | 107.01 грн |
| FFSH2065B-F155 |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 22.3A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 22.3A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 365.72 грн |
| 30+ | 197.48 грн |
| 120+ | 163.36 грн |
| 510+ | 129.82 грн |
| RFP15N05L |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 15A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Description: MOSFET N-CH 50V 15A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NL7SZ19DFT2G-Q |
|
Виробник: onsemi
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.55 грн |
| 6000+ | 3.04 грн |
| 9000+ | 2.85 грн |
| 15000+ | 2.47 грн |
| 21000+ | 2.35 грн |
| 30000+ | 2.24 грн |
| 75000+ | 1.95 грн |
| 150000+ | 1.80 грн |