| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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NSVMUN5332DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMUN5332DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SB360 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 180pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSBC114EMXWTBG | onsemi |
Description: BIAS RESISTOR TRANSISTORS (BRT)Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114EMXWTBG | onsemi |
Description: BIAS RESISTOR TRANSISTORS (BRT)Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114EPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114EPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 103540 шт: термін постачання 21-31 дні (днів) |
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NSVBC114TDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114TDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114YPDXV65G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TDXV6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NSBC114YDXV6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 39761 шт: термін постачання 21-31 дні (днів) |
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NSBC114YPDXV6T5G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 29000 шт: термін постачання 21-31 дні (днів) |
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NSBC114YPDXV6T1 | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSBC114TPDXV6T1 | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSBC114TF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
на замовлення 472000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 202500 шт: термін постачання 21-31 дні (днів) |
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NSBC114EPDXV6T1 | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MBRF20200CT | onsemi |
Description: DIODE ARR SCHOT 200V 10A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
на замовлення 9545 шт: термін постачання 21-31 дні (днів) |
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MBRF20200CT | onsemi |
Description: DIODE ARR SCHOT 200V 10A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM833D | onsemi |
Description: IC AUDIO 2 CIRCUIT 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Audio Operating Temperature: -40°C ~ 85°C Current - Supply: 2.05mA (x2 Channels) Slew Rate: 7V/µs Gain Bandwidth Product: 16 MHz Current - Input Bias: 300 nA Voltage - Input Offset: 150 µV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 37 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 36 V |
на замовлення 6107 шт: термін постачання 21-31 дні (днів) |
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LB1830M-TLM-E | onsemi |
Description: IC MOTOR DRIVER 3V-9V 10MFPSPackaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: Parallel Operating Temperature: -20°C ~ 80°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 3V ~ 9V Applications: General Purpose Technology: Bipolar Voltage - Load: 3V ~ 9V Supplier Device Package: 10-MFPS Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC273MTC | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BITPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 78 MHz Input Capacitance: 7 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF Number of Bits per Element: 8 |
на замовлення 8569 шт: термін постачання 21-31 дні (днів) |
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MC74HC273ADWR2G-Q | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC273ADWR2G-Q | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
на замовлення 839 шт: термін постачання 21-31 дні (днів) |
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NCD57081ADR2G | onsemi |
Description: ISOLATED DRIVER IN A COMPACT 8-PPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 3750Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 13ns, 13ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 25ns Number of Channels: 1 Voltage - Output Supply: 0V ~ 32V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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NCD57081ADR2G | onsemi |
Description: ISOLATED DRIVER IN A COMPACT 8-PPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 3750Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 13ns, 13ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 25ns Number of Channels: 1 Voltage - Output Supply: 0V ~ 32V |
на замовлення 14134 шт: термін постачання 21-31 дні (днів) |
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NVMFWS4D0N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS4D0N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4346 шт: термін постачання 21-31 дні (днів) |
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NVMFS4841NT1G | onsemi |
Description: MOSFET N-CH 30V 16A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES1J | onsemi |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1117500 шт: термін постачання 21-31 дні (днів) |
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ES1J | onsemi |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1121657 шт: термін постачання 21-31 дні (днів) |
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PN2907BU | onsemi |
Description: TRANS PNP 40V 0.8A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LC75836WS-T-E | onsemi |
Description: IC DRVR 140 SEGMENT 48SQFP Packaging: Tray Package / Case: 48-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 140 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 6V Supplier Device Package: 48-SQFP (7x7) Current - Supply: 450 µA |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||||||
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NL17SZ17DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC-74APackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-74A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NL17SZ17DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC-74APackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-74A |
на замовлення 1436 шт: термін постачання 21-31 дні (днів) |
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AF0130CSSM30SMD20 | onsemi |
Description: 1 MP 1/3 CISPackaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: Die Frames per Second: 60.0 |
на замовлення 1840 шт: термін постачання 21-31 дні (днів) |
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AF0131CSSM30SMKA1-CR2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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AF0131CSSM30SMKA1-CP2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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AF0130CSSM30SMKA1-CR2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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AF0130CSSM30SMKA1-CP2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
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MMBZ5239BLT3 | onsemi |
Description: DIODE ZENER 9.1V 225MW SOT23-3Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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MMBZ5239B | onsemi |
Description: DIODE ZENER 9.1V 300MW SOT23Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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MMBZ5239B | onsemi |
Description: DIODE ZENER 9.1V 350MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CAT24C08WI-G | onsemi |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQA17N40 | onsemi |
Description: MOSFET N-CH 400V 17.2A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 8.6A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES3D | onsemi |
Description: DIODE STANDARD 200V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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ES3D | onsemi |
Description: DIODE STANDARD 200V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 22536 шт: термін постачання 21-31 дні (днів) |
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FDMS7620S-F106 | onsemi |
Description: MOSFET 2N-CH 30V 10.1A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS7620S-F106 | onsemi |
Description: MOSFET 2N-CH 30V 10.1A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MOC3061TM | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIPPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.3V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 500µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 600V/µs Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV70627MW002AR2G | onsemi |
Description: IC MOTOR DVRPackaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NCV70627MW002AR2G | onsemi |
Description: IC MOTOR DVRPackaging: Cut Tape (CT) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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T2500DG | onsemi |
Description: TRIAC 400V 6A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 25 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2.5 V Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 400 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| FDA16N50LDTU | onsemi |
Description: MOSFET N-CH 500V 16.5A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN (L-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR2535CT | onsemi |
Description: DIODE ARRAY SCHOT 35V 30A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
на замовлення 98319 шт: термін постачання 21-31 дні (днів) |
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MBR2535CT | onsemi |
Description: DIODE ARRAY SCHOT 35V 30A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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MBR2535CTH | onsemi |
Description: DIODE ARRAY SCHOT 35V 15A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NSVMUN5332DW1T3G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NSVMUN5332DW1T3G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SB360 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| NSBC114EMXWTBG |
![]() |
Виробник: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.89 грн |
| 15+ | 20.39 грн |
| 100+ | 12.93 грн |
| 500+ | 9.11 грн |
| 1000+ | 8.13 грн |
| 2000+ | 7.30 грн |
| 5000+ | 6.30 грн |
| 10000+ | 5.76 грн |
| 50000+ | 4.80 грн |
| NSVBC114EMXWTBG |
![]() |
Виробник: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 14+ | 21.91 грн |
| 100+ | 13.90 грн |
| 500+ | 9.81 грн |
| 1000+ | 8.76 грн |
| 2000+ | 7.88 грн |
| 5000+ | 6.81 грн |
| 10000+ | 6.23 грн |
| 50000+ | 5.22 грн |
| NSVBC114EPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.44 грн |
| 8000+ | 4.75 грн |
| 12000+ | 4.50 грн |
| 20000+ | 3.96 грн |
| 28000+ | 3.81 грн |
| 40000+ | 3.66 грн |
| 100000+ | 3.27 грн |
| NSVBC114EPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 103540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.96 грн |
| 20+ | 15.65 грн |
| 100+ | 9.84 грн |
| 500+ | 6.87 грн |
| 1000+ | 6.11 грн |
| 2000+ | 5.46 грн |
| NSVBC114TDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 7.64 грн |
| NSVBC114TDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.68 грн |
| 15+ | 21.15 грн |
| 100+ | 13.45 грн |
| 500+ | 9.49 грн |
| 1000+ | 8.48 грн |
| 2000+ | 7.63 грн |
| NSVBC114YPDXV65G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4537+ | 4.71 грн |
| NSBC114TDXV6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3692+ | 5.38 грн |
| NSBC114YDXV6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 39761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3692+ | 5.38 грн |
| NSBC114YPDXV6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 29000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3692+ | 5.38 грн |
| NSBC114YPDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NSBC114TPDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NSBC114TF3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
на замовлення 472000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2407+ | 8.07 грн |
| NSBC114TPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 4.97 грн |
| 8000+ | 4.33 грн |
| 12000+ | 4.10 грн |
| 20000+ | 3.61 грн |
| 28000+ | 3.46 грн |
| 40000+ | 3.32 грн |
| 100000+ | 2.97 грн |
| NSBC114TPDXV6T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.58 грн |
| NSBC114TPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 202500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1872+ | 10.76 грн |
| NSBC114EPDXV6T1 |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MBRF20200CT |
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Виробник: onsemi
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 9545 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 121+ | 172.64 грн |
| MBRF20200CT |
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Виробник: onsemi
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| LM833D |
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Виробник: onsemi
Description: IC AUDIO 2 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Audio
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.05mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 37 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
Description: IC AUDIO 2 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Audio
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.05mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 37 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
на замовлення 6107 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 298+ | 70.03 грн |
| LB1830M-TLM-E |
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Виробник: onsemi
Description: IC MOTOR DRIVER 3V-9V 10MFPS
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 9V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 3V ~ 9V
Supplier Device Package: 10-MFPS
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 3V-9V 10MFPS
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 9V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 3V ~ 9V
Supplier Device Package: 10-MFPS
Motor Type - AC, DC: Brushed DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MM74HC273MTC |
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Виробник: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
на замовлення 8569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 38.03 грн |
| 75+ | 30.76 грн |
| 150+ | 27.27 грн |
| 300+ | 25.96 грн |
| 525+ | 25.08 грн |
| 1050+ | 23.76 грн |
| 2550+ | 22.83 грн |
| 5025+ | 22.26 грн |
| MC74HC273ADWR2G-Q |
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Виробник: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MC74HC273ADWR2G-Q |
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Виробник: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
на замовлення 839 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.78 грн |
| 10+ | 32.30 грн |
| 25+ | 29.02 грн |
| 100+ | 23.80 грн |
| 250+ | 22.17 грн |
| 500+ | 21.19 грн |
| NCD57081ADR2G |
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Виробник: onsemi
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 116.51 грн |
| 5000+ | 110.03 грн |
| NCD57081ADR2G |
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Виробник: onsemi
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
на замовлення 14134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.85 грн |
| 10+ | 157.75 грн |
| 25+ | 144.68 грн |
| 100+ | 122.22 грн |
| 250+ | 115.77 грн |
| 500+ | 111.88 грн |
| 1000+ | 106.89 грн |
| NVMFWS4D0N04XMT1G |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 31.21 грн |
| 3000+ | 29.21 грн |
| NVMFWS4D0N04XMT1G |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4346 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.61 грн |
| 10+ | 46.04 грн |
| 25+ | 41.54 грн |
| 100+ | 34.30 грн |
| 250+ | 32.06 грн |
| 500+ | 30.71 грн |
| NVMFS4841NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V
Qualification: AEC-Q101
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| ES1J |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1117500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 6.86 грн |
| 15000+ | 6.05 грн |
| ES1J |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1121657 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.68 грн |
| 15+ | 21.00 грн |
| 50+ | 15.16 грн |
| 100+ | 12.45 грн |
| 500+ | 9.33 грн |
| PN2907BU |
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Виробник: onsemi
Description: TRANS PNP 40V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| LC75836WS-T-E |
Виробник: onsemi
Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
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Мінімальне замовлення: 1250 шт
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| NL17SZ17DBVT1G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
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Мінімальне замовлення: 3000 шт
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| NL17SZ17DBVT1G |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
на замовлення 1436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.34 грн |
| 98+ | 3.13 грн |
| 114+ | 2.69 грн |
| 136+ | 2.11 грн |
| 250+ | 1.91 грн |
| 500+ | 1.79 грн |
| 1000+ | 1.66 грн |
| AF0130CSSM30SMD20 |
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Виробник: onsemi
Description: 1 MP 1/3 CIS
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Frames per Second: 60.0
Description: 1 MP 1/3 CIS
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Frames per Second: 60.0
на замовлення 1840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4139.09 грн |
| 5+ | 3682.96 грн |
| 10+ | 3570.26 грн |
| 25+ | 3224.00 грн |
| 50+ | 3137.38 грн |
| 100+ | 3057.85 грн |
| AF0131CSSM30SMKA1-CR2 |
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Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5380.81 грн |
| 5+ | 4801.12 грн |
| 10+ | 4659.55 грн |
| 25+ | 4213.79 грн |
| 50+ | 4104.93 грн |
| 100+ | 4005.03 грн |
| AF0131CSSM30SMKA1-CP2 |
![]() |
Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5421.25 грн |
| 5+ | 4837.46 грн |
| 10+ | 4695.06 грн |
| 25+ | 4246.07 грн |
| 50+ | 4136.49 грн |
| 100+ | 4035.91 грн |
| AF0130CSSM30SMKA1-CR2 |
![]() |
Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5431.56 грн |
| 5+ | 4847.09 грн |
| 10+ | 4704.30 грн |
| 25+ | 4254.46 грн |
| 50+ | 4144.73 грн |
| 100+ | 4043.97 грн |
| AF0130CSSM30SMKA1-CP2 |
![]() |
Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5460.90 грн |
| 5+ | 4873.96 грн |
| 10+ | 4730.41 грн |
| 25+ | 4278.25 грн |
| 50+ | 4167.96 грн |
| 100+ | 4066.74 грн |
| MMBZ5239BLT3 |
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Виробник: onsemi
Description: DIODE ZENER 9.1V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Description: DIODE ZENER 9.1V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.69 грн |
| MMBZ5239B |
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Виробник: onsemi
Description: DIODE ZENER 9.1V 300MW SOT23
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Description: DIODE ZENER 9.1V 300MW SOT23
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.69 грн |
| MMBZ5239B |
![]() |
Виробник: onsemi
Description: DIODE ZENER 9.1V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Description: DIODE ZENER 9.1V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
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| CAT24C08WI-G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
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| FQA17N40 |
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Виробник: onsemi
Description: MOSFET N-CH 400V 17.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Description: MOSFET N-CH 400V 17.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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| ES3D |
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Виробник: onsemi
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.42 грн |
| 6000+ | 12.75 грн |
| ES3D |
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Виробник: onsemi
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 22536 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.06 грн |
| 10+ | 36.35 грн |
| 50+ | 26.63 грн |
| 100+ | 22.03 грн |
| 500+ | 16.84 грн |
| FDMS7620S-F106 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.71 грн |
| FDMS7620S-F106 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 73.61 грн |
| 100+ | 49.43 грн |
| 500+ | 36.65 грн |
| 1000+ | 33.52 грн |
| MOC3061TM |
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Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| NCV70627MW002AR2G |
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на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 221.23 грн |
| NCV70627MW002AR2G |
![]() |
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 412.32 грн |
| 10+ | 304.05 грн |
| 25+ | 280.81 грн |
| 100+ | 239.53 грн |
| 250+ | 230.31 грн |
| T2500DG |
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Виробник: onsemi
Description: TRIAC 400V 6A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 400 V
Description: TRIAC 400V 6A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 279+ | 71.96 грн |
| FDA16N50LDTU |
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Виробник: onsemi
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN (L-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN (L-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2535CT |
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Виробник: onsemi
Description: DIODE ARRAY SCHOT 35V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE ARRAY SCHOT 35V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
на замовлення 98319 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 319+ | 63.21 грн |
| MBR2535CT |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOT 35V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE ARRAY SCHOT 35V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| MBR2535CTH |
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Виробник: onsemi
Description: DIODE ARRAY SCHOT 35V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE ARRAY SCHOT 35V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
товару немає в наявності
В кошику
од. на суму грн.































