| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMBZ5257B | onsemi |
Description: DIODE ZENER 33V 350MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TIP33AG | onsemi |
Description: TRANS NPN 60V 10A SOT-93Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AR0330CM1C12SHAA0-DP | onsemi |
Description: IMAGE SENSOR MONO CMOS 48-ILCCPackaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 1082 шт: термін постачання 21-31 дні (днів) |
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| AR0330SR1C00SUKA0-CR | onsemi |
Description: IMAGE SENSOR MONO CMOS 48-ILCCPackaging: Bulk Package / Case: 64-VFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2048H x 1536V Supplier Device Package: 64-CSP (6.28x6.65) Frames per Second: 30.0 |
на замовлення 190409 шт: термін постачання 21-31 дні (днів) |
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| AR0330SR1C00SUKA0-CR | onsemi |
Description: IMAGE SENSOR MONO CMOS 48-ILCCPackaging: Tray Package / Case: 64-VFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2048H x 1536V Supplier Device Package: 64-CSP (6.28x6.65) Frames per Second: 30.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AR0330CM1C00SHAA0-DR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 48346 шт: термін постачання 21-31 дні (днів) |
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| AR0330CM1C12SHAA0-DR1 | onsemi |
Description: IMAGE SENSOR 3MP 1/3 CISPackaging: Bulk Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Frames per Second: 60.0 |
на замовлення 13193 шт: термін постачання 21-31 дні (днів) |
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| AR0330CM1C12SHAA0-DR1 | onsemi |
Description: IMAGE SENSOR 3MP 1/3 CISPackaging: Tray Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AR0330CM1C00SHAA0-DP | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 1710 шт: термін постачання 21-31 дні (днів) |
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AR0330CM1C00SHAA0-DP | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tray Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0330CM1C00SHAA0-DR1 | onsemi |
Description: IMAGE SENSOR 3MP 1/3 CISPackaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 2010 шт: термін постачання 21-31 дні (днів) |
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AR0330CM1C00SHAA0-DR1 | onsemi |
Description: IMAGE SENSOR 3MP 1/3 CISPackaging: Tray Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQPF5N50CFTU | onsemi |
Description: MOSFET N-CH 500V 5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N6505TG | onsemi |
Description: SCR 100V 25A TO-220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.8 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 100 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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7WBD383AMX1TCG | onsemi |
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.95x1) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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7WBD383CMX1TCG | onsemi |
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.45x1) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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7WBD383BMX1TCG | onsemi |
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.6x1) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7WBD383MUTAG | onsemi |
Description: IC BUS FET EXCH SW 2X1:1 8-UDFNPackaging: Bulk Package / Case: 8-UFDFN Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-UDFN (1.8x1.2) |
на замовлення 39638 шт: термін постачання 21-31 дні (днів) |
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7WBD383AMUTCG | onsemi |
Description: IC BUS FET EXCH SW 2X1:1 8-UQFNPackaging: Bulk Package / Case: 8-UFQFN Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-UQFN (1.6x1.6) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FCH104N60 | onsemi |
Description: MOSFET N-CH 600V 37A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V |
на замовлення 347 шт: термін постачання 21-31 дні (днів) |
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HBL1025T1G | onsemi |
Description: LGHT PROTECT LED SHUNT 11.5V SMDPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage: 11.5V Mounting Type: Surface Mount Applications: LED Protection Technology: LED Shunt Supplier Device Package: 5-TSOP Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HBL1025T1G | onsemi |
Description: LGHT PROTECT LED SHUNT 11.5V SMDPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage: 11.5V Mounting Type: Surface Mount Applications: LED Protection Technology: LED Shunt Supplier Device Package: 5-TSOP Number of Circuits: 1 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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HBL1015T1G | onsemi |
Description: LIGHT PROTECT LED SHUNT 8V SMDPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage: 8V Mounting Type: Surface Mount Applications: LED Protection Technology: LED Shunt Supplier Device Package: 5-TSOP Number of Circuits: 1 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MUR120 | onsemi |
Description: DIODE STANDARD 200V 1A AXIALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 24190 шт: термін постачання 21-31 дні (днів) |
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N24C256X-1CBT5G | onsemi |
Description: 256 KB I2C CMOS SERIAL EEPROM WIPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (1x1) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 32K x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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N24C256X-1CBT5G | onsemi |
Description: 256 KB I2C CMOS SERIAL EEPROM WIPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (1x1) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 32K x 8 |
на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
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FCH125N60E | onsemi |
Description: MOSFET N-CH 600V 29A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DM74AS30MX | onsemi |
Description: IC GATE NAND 1CH 8-INP 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 20mA Number of Inputs: 8 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MT9P031I12STM-DR1 | onsemi |
Description: SENSOR IMAGE 5MP MONO CMOS 48LCCPackaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 53.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N3702 | onsemi |
Description: TRANS PNP 25V 0.5A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NXH25C120L2C2SG | onsemi |
Description: IGBT MODULE, CIB 1200 V, 25 A IG Packaging: Bulk Package / Case: 26-PowerDIP Module (1.199", 47.20mm) Mounting Type: Through Hole Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: 26-DIP Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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MOC3043SM | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 400µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLX1G11AMUTCG | onsemi |
Description: IC GATE AND 1CH 3-INP 6UDFNPackaging: Bulk Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: 6-UDFN (1.45x1) Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 70971 шт: термін постачання 21-31 дні (днів) |
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| NLVX1G11AMUTCG | onsemi |
Description: IC GATE AND 1CH 3-INP 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: 6-UDFN (1.45x1) Input Logic Level - Low: 0.1V ~ 0.55V Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NLVX1G11AMUTCG | onsemi |
Description: IC GATE AND 1CH 3-INP 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: 6-UDFN (1.45x1) Input Logic Level - Low: 0.1V ~ 0.55V Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 1848 шт: термін постачання 21-31 дні (днів) |
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NLSX5011AMUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6UDFNPackaging: Bulk Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 6-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NLSX5011AMUTBG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6UDFNPackaging: Tape & Reel (TR) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 6-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLSX5011AMUTBG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6UDFNPackaging: Cut Tape (CT) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 6-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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MC7908CD2TR4G | onsemi |
Description: IC REG LINEAR -8V 1A D2PAK-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Min/Fixed): -8V PSRR: 62dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TF202THC-4-TL-H | onsemi |
Description: JFET N-CH 1MA 3VTFP Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Current Drain (Id) - Max: 1 mA Supplier Device Package: 3-VTFP Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V |
на замовлення 1279 шт: термін постачання 21-31 дні (днів) |
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CAT24C08YI-G | onsemi |
Description: IC EEPROM 8KBIT I2C 8TSSOPPackaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 137789 шт: термін постачання 21-31 дні (днів) |
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CAT24C08YI-G | onsemi |
Description: IC EEPROM 8KBIT I2C 8TSSOPPackaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 65800 шт: термін постачання 21-31 дні (днів) |
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NB100LVEP17MNG | onsemi |
Description: IC DIFFERENT RX/DRVR 4BIT 24-QFNPackaging: Bulk Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Bits: 4 Logic Type: Differential Receiver/Driver Operating Temperature: -40°C ~ 85°C Supply Voltage: 2.375V ~ 3.8V Supplier Device Package: 24-QFN (4x4) |
на замовлення 33126 шт: термін постачання 21-31 дні (днів) |
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1N751A | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FOD2741C | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-DIP Voltage - Output (Max): 30V Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBTA63 | onsemi |
Description: TRANS PNP DARL 30V 1.2A SOT-23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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MMBTA63 | onsemi |
Description: TRANS PNP DARL 30V 1.2A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV4279D1G | onsemi |
Description: IC REG LINEAR 5V 150MA 8-SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 250 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 3 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV4276ADS50G | onsemi |
Description: IC REG LINEAR 5V 400MA D2PAK-5Packaging: Tube Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 70dB (100Hz) Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV4276ADS50R4G | onsemi |
Description: IC REG LINEAR 5V 400MA D2PAK-5Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 70dB (100Hz) Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV4276BDS50R4G | onsemi |
Description: IC REG LINEAR 5V 400MA D2PAK-5Packaging: Bulk Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Min/Fixed): 5V Control Features: Enable Grade: Automotive PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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NTMFD001N03P9 | onsemi |
Description: MOSFET 2N-CH 30V 11A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMFD001N03P9 | onsemi |
Description: MOSFET 2N-CH 30V 11A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ECH8320-TL-H | onsemi |
Description: MOSFET P-CH 20V 9.5A 8ECHPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ECH8320-TL-H | onsemi |
Description: MOSFET P-CH 20V 9.5A 8ECHPackaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V |
на замовлення 122629 шт: термін постачання 21-31 дні (днів) |
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ECH8306-TL-E | onsemi |
Description: MOSFET P-CH 100V 2A 8ECH Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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| ECH8309-TL-H | onsemi |
Description: P-CHANNEL POWER MOSFET -12V, -9.Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V |
на замовлення 142845 шт: термін постачання 21-31 дні (днів) |
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MMDL770T1 | onsemi |
Description: DIODE SCHOTTKY 70V SOD323Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 0.5pF @ 20V, 1MHz Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC03ANG | onsemi |
Description: IC GATE NAND 4CH 2-INP 14DIPPackaging: Tube Features: Open Drain Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: -, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-PDIP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 27731 шт: термін постачання 21-31 дні (днів) |
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SVC203SPA | onsemi |
Description: DIODE VARACTOR 16V DUAL 3-SPAPackaging: Bulk Package / Case: 3-SSIP Mounting Type: Through Hole Diode Type: 1 Pair Common Cathode Operating Temperature: 125°C (TJ) Q @ Vr, F: 60 @ 3V, 100MHz Capacitance Ratio Condition: C3/C8 Supplier Device Package: 3-SPA Voltage - Peak Reverse (Max): 16 V Capacitance Ratio: 3.0 |
на замовлення 180999 шт: термін постачання 21-31 дні (днів) |
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| MMBZ5257B |
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Виробник: onsemi
Description: DIODE ZENER 33V 350MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE ZENER 33V 350MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TIP33AG |
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Виробник: onsemi
Description: TRANS NPN 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
Description: TRANS NPN 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
товару немає в наявності
В кошику
од. на суму грн.
| AR0330CM1C12SHAA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 555.16 грн |
| AR0330SR1C00SUKA0-CR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
на замовлення 190409 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 615.15 грн |
| AR0330SR1C00SUKA0-CR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0330CM1C00SHAA0-DR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 48346 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 861.35 грн |
| AR0330CM1C12SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
на замовлення 13193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 891.69 грн |
| AR0330CM1C12SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0330CM1C00SHAA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 924.11 грн |
| AR0330CM1C00SHAA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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| AR0330CM1C00SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 2010 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 1085.48 грн |
| AR0330CM1C00SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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| FQPF5N50CFTU |
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Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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| 2N6505TG |
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Виробник: onsemi
Description: SCR 100V 25A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
Description: SCR 100V 25A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 271+ | 74.64 грн |
| 7WBD383AMX1TCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1366+ | 15.17 грн |
| 7WBD383CMX1TCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1366+ | 15.17 грн |
| 7WBD383BMX1TCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1366+ | 15.17 грн |
| 7WBD383MUTAG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
Description: IC BUS FET EXCH SW 2X1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
на замовлення 39638 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 892+ | 23.45 грн |
| 7WBD383AMUTCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-UQFN
Packaging: Bulk
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UQFN (1.6x1.6)
Description: IC BUS FET EXCH SW 2X1:1 8-UQFN
Packaging: Bulk
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UQFN (1.6x1.6)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 892+ | 23.45 грн |
| FCH104N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
на замовлення 347 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 121+ | 171.72 грн |
| HBL1025T1G |
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Виробник: onsemi
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
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| HBL1025T1G |
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Виробник: onsemi
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1397+ | 14.12 грн |
| HBL1015T1G |
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Виробник: onsemi
Description: LIGHT PROTECT LED SHUNT 8V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 8V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Description: LIGHT PROTECT LED SHUNT 8V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 8V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 12.41 грн |
| MUR120 |
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Виробник: onsemi
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 24190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2597+ | 8.10 грн |
| N24C256X-1CBT5G |
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Виробник: onsemi
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
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| N24C256X-1CBT5G |
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Виробник: onsemi
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 23.34 грн |
| 25+ | 22.72 грн |
| 50+ | 20.90 грн |
| 100+ | 20.45 грн |
| 250+ | 19.86 грн |
| 500+ | 19.10 грн |
| 1000+ | 18.65 грн |
| FCH125N60E |
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Виробник: onsemi
Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
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| DM74AS30MX |
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Виробник: onsemi
Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
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| MT9P031I12STM-DR1 |
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Виробник: onsemi
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
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| 2N3702 |
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Виробник: onsemi
Description: TRANS PNP 25V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS PNP 25V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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| NXH25C120L2C2SG |
Виробник: onsemi
Description: IGBT MODULE, CIB 1200 V, 25 A IG
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V
Description: IGBT MODULE, CIB 1200 V, 25 A IG
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 4213.74 грн |
| MOC3043SM |
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Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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| NLX1G11AMUTCG |
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Виробник: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 70971 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2732+ | 7.59 грн |
| NLVX1G11AMUTCG |
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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| NLVX1G11AMUTCG |
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 1848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.94 грн |
| 16+ | 19.03 грн |
| 25+ | 15.59 грн |
| 100+ | 10.98 грн |
| 250+ | 9.18 грн |
| 500+ | 8.07 грн |
| 1000+ | 7.02 грн |
| NLSX5011AMUTCG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Packaging: Bulk
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Packaging: Bulk
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 423+ | 48.96 грн |
| NLSX5011AMUTBG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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| NLSX5011AMUTBG |
![]() |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.44 грн |
| 10+ | 70.62 грн |
| 25+ | 59.16 грн |
| 100+ | 43.40 грн |
| 250+ | 37.45 грн |
| 500+ | 33.79 грн |
| 1000+ | 30.22 грн |
| MC7908CD2TR4G |
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Виробник: onsemi
Description: IC REG LINEAR -8V 1A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): -8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR -8V 1A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): -8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
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| TF202THC-4-TL-H |
Виробник: onsemi
Description: JFET N-CH 1MA 3VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
Description: JFET N-CH 1MA 3VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
на замовлення 1279 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1279+ | 2.76 грн |
| CAT24C08YI-G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 137789 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 982+ | 20.67 грн |
| CAT24C08YI-G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 65800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 17.41 грн |
| NB100LVEP17MNG |
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Виробник: onsemi
Description: IC DIFFERENT RX/DRVR 4BIT 24-QFN
Packaging: Bulk
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Differential Receiver/Driver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 2.375V ~ 3.8V
Supplier Device Package: 24-QFN (4x4)
Description: IC DIFFERENT RX/DRVR 4BIT 24-QFN
Packaging: Bulk
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Differential Receiver/Driver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 2.375V ~ 3.8V
Supplier Device Package: 24-QFN (4x4)
на замовлення 33126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 846.16 грн |
| 1N751A |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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| FOD2741C |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
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| MMBTA63 |
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Виробник: onsemi
Description: TRANS PNP DARL 30V 1.2A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS PNP DARL 30V 1.2A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6045+ | 3.36 грн |
| MMBTA63 |
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Виробник: onsemi
Description: TRANS PNP DARL 30V 1.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS PNP DARL 30V 1.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
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| NCV4279D1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
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| NCV4276ADS50G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 70dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 400MA D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 70dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
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| NCV4276ADS50R4G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 70dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 400MA D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 70dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
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| NCV4276BDS50R4G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 400MA D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 81.38 грн |
| NTMFD001N03P9 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 61.26 грн |
| NTMFD001N03P9 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 193.74 грн |
| 10+ | 120.70 грн |
| 100+ | 83.07 грн |
| 500+ | 65.59 грн |
| 1000+ | 64.85 грн |
| ECH8320-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
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| ECH8320-TL-H |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
на замовлення 122629 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 624+ | 33.10 грн |
| ECH8306-TL-E |
Виробник: onsemi
Description: MOSFET P-CH 100V 2A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V
Description: MOSFET P-CH 100V 2A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1150+ | 17.93 грн |
| ECH8309-TL-H |
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Виробник: onsemi
Description: P-CHANNEL POWER MOSFET -12V, -9.
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Description: P-CHANNEL POWER MOSFET -12V, -9.
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
на замовлення 142845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 754+ | 27.59 грн |
| MMDL770T1 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 70V SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.5pF @ 20V, 1MHz
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
Description: DIODE SCHOTTKY 70V SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.5pF @ 20V, 1MHz
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
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| MC74HC03ANG |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14DIP
Packaging: Tube
Features: Open Drain
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14DIP
Packaging: Tube
Features: Open Drain
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 27731 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 910+ | 22.76 грн |
| SVC203SPA |
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Виробник: onsemi
Description: DIODE VARACTOR 16V DUAL 3-SPA
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Q @ Vr, F: 60 @ 3V, 100MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: 3-SPA
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
Description: DIODE VARACTOR 16V DUAL 3-SPA
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Q @ Vr, F: 60 @ 3V, 100MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: 3-SPA
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
на замовлення 180999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3620+ | 5.42 грн |





























