| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC74LCX244DTR2G-Q | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 20-TSSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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MC74LCX244DTR2G-Q | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 20-TSSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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SE5532N | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: Standard (General Purpose) Operating Temperature: -55°C ~ 125°C (TA) Current - Supply: 8mA Slew Rate: 9V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 300 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-PDIP Number of Circuits: 2 Current - Output / Channel: 38 mA Voltage - Supply Span (Min): 6 V Voltage - Supply Span (Max): 40 V |
на замовлення 941 шт: термін постачання 21-31 дні (днів) |
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1N746A | onsemi |
Description: DIODE ZENER 3.3V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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H11AG1SM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 5µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC78L15ACD | onsemi |
Description: IC REG LINEAR 15V 100MA 8-SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6.5 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 15V PSRR: 39dB (120Hz) Protection Features: Over Temperature, Short Circuit |
на замовлення 1399 шт: термін постачання 21-31 дні (днів) |
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| NCY9000DR2G | onsemi |
Description: IC OPAMP GP DUAL Packaging: Bulk |
на замовлення 11937 шт: термін постачання 21-31 дні (днів) |
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CAT24C64YI-G | onsemi |
Description: IC EEPROM 64K I2C 1MHZ 8TSSOPPackaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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FDMC8327L-L701 | onsemi |
Description: FET 40V 9.7 MOHM MLP33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC8327L-L701 | onsemi |
Description: FET 40V 9.7 MOHM MLP33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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H11B815300W | onsemi |
Description: OPTOISOLATOR 5KV DARLINGTON 4DIPPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Darlington Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 600% @ 1mA Vce Saturation (Max): 1V Current Transfer Ratio (Max): 7500% @ 1mA Supplier Device Package: 4-DIP Voltage - Output (Max): 35V Rise / Fall Time (Typ): 300µs, 250µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSBA144WDP6T5G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-963Packaging: Bulk Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-963 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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NDF02N60ZH | onsemi |
Description: MOSFET N-CH 600V 2.4A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220-2 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
на замовлення 824500 шт: термін постачання 21-31 дні (днів) |
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NDF02N60ZG | onsemi |
Description: MOSFET N-CH 600V 2.4A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V |
на замовлення 184355 шт: термін постачання 21-31 дні (днів) |
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BZX84C12 | onsemi |
Description: ZENER DIODE, 12V, 5%, 0.25W, UNIPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
на замовлення 252220 шт: термін постачання 21-31 дні (днів) |
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SNXH800H120L7QDSG | onsemi |
Description: QDUAL3 1200 V 800 A HALF BRIDGEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 800A NTC Thermistor: Yes Supplier Device Package: 11-PIM (152x62.15) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 94300 pF @ 25 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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| AP0102AT2L00XPGA0-DR2 | onsemi |
Description: 1MP CO-PROCESSOR Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AC86PC | onsemi |
Description: IC GATE XOR 4CH 2-INP 14MDIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UJ3C065080B3 | onsemi |
Description: MOSFET N-CH 650V 25A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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UJ3C065080B3 | onsemi |
Description: MOSFET N-CH 650V 25A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 5690 шт: термін постачання 21-31 дні (днів) |
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UJ3C065080T3S | onsemi |
Description: MOSFET N-CH 650V 31A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 6191 шт: термін постачання 21-31 дні (днів) |
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BAV70DXV6T5 | onsemi |
Description: DIODE ARRAY GP 100V 200MA SOT563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-563 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 7989 шт: термін постачання 21-31 дні (днів) |
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NLV74HC541ADTR2G | onsemi |
Description: IC BUFFER NON-INVERT 6V 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-TSSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 345 шт: термін постачання 21-31 дні (днів) |
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BC549C | onsemi |
Description: TRANS NPN 30V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33167TVG | onsemi |
Description: IC REG BUCK BST ADJ 5.5A TO220-5Packaging: Bulk Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 5.5A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive or Negative Frequency - Switching: 72kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: TO-220-5 Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 7.5V Voltage - Output (Min/Fixed): 5.05V |
на замовлення 86799 шт: термін постачання 21-31 дні (днів) |
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NST807CMTWFTBG | onsemi |
Description: TRANS PNP 45V 0.5A 3XDFNWPackaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 360MHz Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NE592N14 | onsemi |
Description: IC AMP GENERAL PURPOSE 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Applications: Standard (General Purpose) Voltage - Supply, Single/Dual (±): ±3V ~ 8V Supplier Device Package: 14-PDIP Number of Circuits: 1 Current - Supply: 18 mA Current - Output / Channel: 10 mA |
на замовлення 1253 шт: термін постачання 21-31 дні (днів) |
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FQP3N60 | onsemi |
Description: MOSFET N-CH 600V 3A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DM74ALS32SJX | onsemi |
Description: IC GATE OR 4CH 2-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF Number of Circuits: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DM74ALS32N | onsemi |
Description: IC GATE OR 4CH 2-INP 14MDIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: OR Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF Number of Circuits: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NDB4060L | onsemi |
Description: MOSFET N-CH 60V 15A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NDB4060 | onsemi |
Description: MOSFET N-CH 60V 15A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C6V2 | onsemi |
Description: DIODE ZENER 6.2V 350MW SOT23Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C6V2 | onsemi |
Description: DIODE ZENER 6.2V 350MW SOT23Tolerance: ±6% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
на замовлення 327505 шт: термін постачання 21-31 дні (днів) |
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MC34074DG | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Single-Ended Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C (TA) Current - Supply: 1.9mA (x4 Channels) Slew Rate: 13V/µs Gain Bandwidth Product: 4.5 MHz Current - Input Bias: 100 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-SOIC Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 44 V |
на замовлення 136 шт: термін постачання 21-31 дні (днів) |
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2KBP06M | onsemi |
Description: BRIDGE RECT 1PHASE 600V 2A KBPMPackaging: Tube Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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6N137SM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 10407 шт: термін постачання 21-31 дні (днів) |
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ICTE-10RL4 | onsemi |
Description: TVS 1500W 10V UNIDIRECT AXIALPackaging: Bulk |
на замовлення 822 шт: термін постачання 21-31 дні (днів) |
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1.5SMC16AT3 | onsemi |
Description: TVS 1500W 16V UNIDIRECT SMCPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5SMC47AT3 | onsemi |
Description: TVS 1500W 47V UNIDIRECT SMCPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA10AT3 | onsemi |
Description: TVS 400W 10V UNIDIRECT SMAPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA16AT3 | onsemi |
Description: TVS 400W 16V UNIDIRECT SMAPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV4266-2CST33T3G | onsemi |
Description: IC REG LINEAR 3.3V 150MA SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-223 (TO-261) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive PSRR: 68dB (100Hz) Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV4266-2CST33T3G | onsemi |
Description: IC REG LINEAR 3.3V 150MA SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-223 (TO-261) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive PSRR: 68dB (100Hz) Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Qualification: AEC-Q100 |
на замовлення 3218 шт: термін постачання 21-31 дні (днів) |
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LC05112C01MTTTG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6WDFN Packaging: Bulk Package / Case: 6-PowerWDFN Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 6-WDFN (4x2.6), Dual Flag Fault Protection: Over Current |
на замовлення 25040 шт: термін постачання 21-31 дні (днів) |
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LC05111C13MTTTG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6WDFN Packaging: Bulk Package / Case: 6-PowerWDFN Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 6-WDFN (4x2.6), Dual Flag Fault Protection: Over Current |
на замовлення 133869 шт: термін постачання 21-31 дні (днів) |
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LC05132C01MTTTG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6WDFN Packaging: Bulk Package / Case: 6-PowerWDFN Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 100°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 6-WDFN (4x2.6), Dual Flag Fault Protection: Over Current |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GBU4J | onsemi |
Description: BRIDGE RECT 1PHASE 600V 4A GBUPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 846 шт: термін постачання 21-31 дні (днів) |
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CAV25512HU5E-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8UDFNPackaging: Bulk Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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SCD7815BTG | onsemi |
Description: IC REG LINEAR 15V 1A TO220Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 15V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJK44H11TWG | onsemi |
Description: TRANS NPN 80V 8A LFPAK4Packaging: Bulk Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 85MHz Supplier Device Package: LFPAK4 (5x6) Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 20 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1.5KE7.5A | onsemi |
Description: TVS DIODE 6.4VWM 11.3VC DO201Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 132A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5232BT1G | onsemi |
Description: DIODE ZENER 5.6V 500MW SOD123Tolerance: ±5% Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 270447 шт: термін постачання 21-31 дні (днів) |
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TIP41C | onsemi |
Description: TRANS NPN 100V 6A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 65 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD438G | onsemi |
Description: TRANS PNP 45V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 36 W |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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| FSS132-TL-E | onsemi |
Description: PCH 4V DRIVE SERIES Packaging: Bulk |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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TIP31A | onsemi |
Description: TRANS NPN 60V 3A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC10H136P | onsemi |
Description: IC COUNTER UNIV HEX HS 16-DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Operating Temperature: 0°C ~ 75°C Direction: Up, Down Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-PDIP Count Rate: 250 MHz Number of Bits per Element: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NXH010P120MNF1PG | onsemi |
Description: MOSFET 2N-CH 1200V 114APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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MMBD7000 | onsemi |
Description: DIODE ARR GP 100V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MC74LCX244DTR2G-Q |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 28.69 грн |
| 5000+ | 26.93 грн |
| 7500+ | 26.58 грн |
| 12500+ | 24.58 грн |
| 17500+ | 24.37 грн |
| 25000+ | 24.16 грн |
| MC74LCX244DTR2G-Q |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.32 грн |
| 10+ | 42.32 грн |
| 25+ | 38.08 грн |
| 100+ | 31.38 грн |
| 250+ | 29.30 грн |
| 500+ | 28.05 грн |
| 1000+ | 26.58 грн |
| SE5532N |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: -55°C ~ 125°C (TA)
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-PDIP
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: -55°C ~ 125°C (TA)
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-PDIP
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
на замовлення 941 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 606+ | 36.11 грн |
| 1N746A |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| H11AG1SM |
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Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| MC78L15ACD |
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Виробник: onsemi
Description: IC REG LINEAR 15V 100MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 15V
PSRR: 39dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 100MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 15V
PSRR: 39dB (120Hz)
Protection Features: Over Temperature, Short Circuit
на замовлення 1399 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1399+ | 15.17 грн |
| NCY9000DR2G |
на замовлення 11937 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 228+ | 107.17 грн |
| CAT24C64YI-G |
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Виробник: onsemi
Description: IC EEPROM 64K I2C 1MHZ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64K I2C 1MHZ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 144+ | 152.99 грн |
| FDMC8327L-L701 |
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Виробник: onsemi
Description: FET 40V 9.7 MOHM MLP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Description: FET 40V 9.7 MOHM MLP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
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| FDMC8327L-L701 |
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Виробник: onsemi
Description: FET 40V 9.7 MOHM MLP33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Description: FET 40V 9.7 MOHM MLP33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.76 грн |
| 10+ | 118.09 грн |
| 100+ | 80.43 грн |
| 500+ | 60.38 грн |
| 1000+ | 55.53 грн |
| H11B815300W |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 600% @ 1mA
Vce Saturation (Max): 1V
Current Transfer Ratio (Max): 7500% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 300µs, 250µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 600% @ 1mA
Vce Saturation (Max): 1V
Current Transfer Ratio (Max): 7500% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 35V
Rise / Fall Time (Typ): 300µs, 250µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| NSBA144WDP6T5G |
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Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2PNP 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4013+ | 5.11 грн |
| NDF02N60ZH |
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Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 600V 2.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 824500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 22.73 грн |
| NDF02N60ZG |
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Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
Description: MOSFET N-CH 600V 2.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
на замовлення 184355 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1025+ | 23.55 грн |
| BZX84C12 |
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Виробник: onsemi
Description: ZENER DIODE, 12V, 5%, 0.25W, UNI
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: ZENER DIODE, 12V, 5%, 0.25W, UNI
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 252220 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.18 грн |
| SNXH800H120L7QDSG |
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Виробник: onsemi
Description: QDUAL3 1200 V 800 A HALF BRIDGE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 800A
NTC Thermistor: Yes
Supplier Device Package: 11-PIM (152x62.15)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 94300 pF @ 25 V
Description: QDUAL3 1200 V 800 A HALF BRIDGE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 800A
NTC Thermistor: Yes
Supplier Device Package: 11-PIM (152x62.15)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 94300 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15157.61 грн |
| 10+ | 13511.93 грн |
| 74AC86PC |
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Виробник: onsemi
Description: IC GATE XOR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XOR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| UJ3C065080B3 |
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Виробник: onsemi
Description: MOSFET N-CH 650V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 409.00 грн |
| UJ3C065080B3 |
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Виробник: onsemi
Description: MOSFET N-CH 650V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 5690 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 499.04 грн |
| 10+ | 449.15 грн |
| 100+ | 393.86 грн |
| UJ3C065080T3S |
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Виробник: onsemi
Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 6191 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 509.26 грн |
| 50+ | 396.79 грн |
| 100+ | 367.47 грн |
| 500+ | 344.43 грн |
| BAV70DXV6T5 |
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Виробник: onsemi
Description: DIODE ARRAY GP 100V 200MA SOT563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 100V 200MA SOT563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 7989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 5.06 грн |
| NLV74HC541ADTR2G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 6V 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 345+ | 63.99 грн |
| BC549C |
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Виробник: onsemi
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| MC33167TVG |
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Виробник: onsemi
Description: IC REG BUCK BST ADJ 5.5A TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 5.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 72kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 7.5V
Voltage - Output (Min/Fixed): 5.05V
Description: IC REG BUCK BST ADJ 5.5A TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 5.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 72kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 7.5V
Voltage - Output (Min/Fixed): 5.05V
на замовлення 86799 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 171+ | 142.90 грн |
| NST807CMTWFTBG |
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Виробник: onsemi
Description: TRANS PNP 45V 0.5A 3XDFNW
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 360MHz
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS PNP 45V 0.5A 3XDFNW
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 360MHz
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
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| NE592N14 |
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Виробник: onsemi
Description: IC AMP GENERAL PURPOSE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Applications: Standard (General Purpose)
Voltage - Supply, Single/Dual (±): ±3V ~ 8V
Supplier Device Package: 14-PDIP
Number of Circuits: 1
Current - Supply: 18 mA
Current - Output / Channel: 10 mA
Description: IC AMP GENERAL PURPOSE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Applications: Standard (General Purpose)
Voltage - Supply, Single/Dual (±): ±3V ~ 8V
Supplier Device Package: 14-PDIP
Number of Circuits: 1
Current - Supply: 18 mA
Current - Output / Channel: 10 mA
на замовлення 1253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 466+ | 46.72 грн |
| FQP3N60 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 600V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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| DM74ALS32SJX |
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Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
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| DM74ALS32N | ![]() |
![]() |
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: OR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE OR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: OR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
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| NDB4060L |
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Виробник: onsemi
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
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| NDB4060 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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| BZX84C6V2 |
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Виробник: onsemi
Description: DIODE ZENER 6.2V 350MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 350MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
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| BZX84C6V2 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 6.2V 350MW SOT23
Tolerance: ±6%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 350MW SOT23
Tolerance: ±6%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 327505 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7869+ | 2.94 грн |
| MC34074DG |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 1.9mA (x4 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4.5 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 1.9mA (x4 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4.5 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 136+ | 161.68 грн |
| 2KBP06M |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| 6N137SM |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 10407 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.08 грн |
| 50+ | 53.45 грн |
| 100+ | 49.33 грн |
| 500+ | 39.40 грн |
| 1000+ | 37.15 грн |
| 2000+ | 35.24 грн |
| 5000+ | 32.61 грн |
| 10000+ | 31.33 грн |
| ICTE-10RL4 |
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на замовлення 822 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 822+ | 30.04 грн |
| NCV4266-2CST33T3G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223 (TO-261)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223 (TO-261)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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| NCV4266-2CST33T3G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223 (TO-261)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223 (TO-261)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (100Hz)
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
на замовлення 3218 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.99 грн |
| 10+ | 92.99 грн |
| 25+ | 78.30 грн |
| 100+ | 57.93 грн |
| 250+ | 50.29 грн |
| 500+ | 45.59 грн |
| 1000+ | 40.97 грн |
| LC05112C01MTTTG |
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Bulk
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Bulk
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
на замовлення 25040 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 271+ | 81.64 грн |
| LC05111C13MTTTG |
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Bulk
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Bulk
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
на замовлення 133869 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 244+ | 90.47 грн |
| LC05132C01MTTTG |
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Bulk
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 100°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Bulk
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 100°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 224+ | 98.56 грн |
| GBU4J |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 846 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.50 грн |
| 20+ | 102.10 грн |
| 100+ | 78.90 грн |
| 500+ | 59.43 грн |
| CAV25512HU5E-GT3 |
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Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 71 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 71+ | 311.13 грн |
| SCD7815BTG |
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Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 15V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
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| MJK44H11TWG |
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Виробник: onsemi
Description: TRANS NPN 80V 8A LFPAK4
Packaging: Bulk
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: LFPAK4 (5x6)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
Description: TRANS NPN 80V 8A LFPAK4
Packaging: Bulk
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: LFPAK4 (5x6)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
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| 1.5KE7.5A |
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Виробник: onsemi
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 132A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 132A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
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| MMSZ5232BT1G |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 270447 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.44 грн |
| TIP41C |
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Виробник: onsemi
Description: TRANS NPN 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
Description: TRANS NPN 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
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| BD438G |
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Виробник: onsemi
Description: TRANS PNP 45V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
Description: TRANS PNP 45V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
на замовлення 19 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 32.23 грн |
| FSS132-TL-E |
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 392+ | 62.52 грн |
| TIP31A |
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Виробник: onsemi
Description: TRANS NPN 60V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN 60V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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| MC10H136P |
Виробник: onsemi
Description: IC COUNTER UNIV HEX HS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Operating Temperature: 0°C ~ 75°C
Direction: Up, Down
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Count Rate: 250 MHz
Number of Bits per Element: 4
Description: IC COUNTER UNIV HEX HS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Operating Temperature: 0°C ~ 75°C
Direction: Up, Down
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Count Rate: 250 MHz
Number of Bits per Element: 4
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| NXH010P120MNF1PG |
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Виробник: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 84 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8092.74 грн |
| MMBD7000 |
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Виробник: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
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