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FQU3N60TU FQU3N60TU onsemi FQD3N60.pdf Description: MOSFET N-CH 600V 2.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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FQD3N60TF FQD3N60TF onsemi FQD3N60.pdf Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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MUN2141T1G MUN2141T1G onsemi dta115t-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 100 kOhms
на замовлення 156000 шт:
термін постачання 21-31 дні (днів)
11539+2.28 грн
Мінімальне замовлення: 11539
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MMUN2141LT1G MMUN2141LT1G onsemi dta115t-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 100 kOhms
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
11539+2.28 грн
Мінімальне замовлення: 11539
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MUN2140T1G MUN2140T1G onsemi dta144t-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
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MUN2140T1G MUN2140T1G onsemi dta144t-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
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FDS6294 FDS6294 onsemi fds6294-d.pdf Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
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FDS6294 FDS6294 onsemi fds6294-d.pdf Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
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FDS6298 FDS6298 onsemi fds6298-d.pdf Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 15 V
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FDS6298 FDS6298 onsemi fds6298-d.pdf Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 15 V
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FDS6299S FDS6299S onsemi FDS6299S.pdf Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 21A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 15 V
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UC2844N UC2844N onsemi uc3844-d.pdf description Description: IC REG CTRLR PWM CM 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
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NTMFS005P03P8ZT1G NTMFS005P03P8ZT1G onsemi ntmfs005p03p8z-d.pdf Description: MOSFET P-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
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NTMFS005P03P8ZT1G NTMFS005P03P8ZT1G onsemi ntmfs005p03p8z-d.pdf Description: MOSFET P-CH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
3+141.76 грн
10+90.91 грн
100+64.04 грн
500+47.84 грн
1000+43.89 грн
Мінімальне замовлення: 3
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TRANSDIODES onsemi Description: 3 TRANS TO-92 & 2 DIODES
Packaging: Bulk
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+999.47 грн
10+836.01 грн
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MUR820H MUR820H onsemi MUR820%20SERIES_K2103.pdf Description: DIODE STANDARD 200V 8A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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NCP370MUAITXG NCP370MUAITXG onsemi ncp370-d.pdf Description: IC PWR OVP POS/NEG N-CH 12LLGA
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-UFLGA Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: -28V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-LLGA (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
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NCP370MUAITXG NCP370MUAITXG onsemi ncp370-d.pdf Description: IC PWR OVP POS/NEG N-CH 12LLGA
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 12-UFLGA Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: -28V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-LLGA (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
на замовлення 236560 шт:
термін постачання 21-31 дні (днів)
495+46.06 грн
Мінімальне замовлення: 495
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SBT350-06J SBT350-06J onsemi SBT350-06J.pdf Description: DIODE ARR SCHOTT 60V 35A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 2053 шт:
термін постачання 21-31 дні (днів)
133+157.36 грн
Мінімальне замовлення: 133
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SBT350-06J SBT350-06J onsemi SBT350-06J.pdf Description: DIODE ARR SCHOTT 60V 35A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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FAN5090MTCX FAN5090MTCX onsemi FAN5090.pdf Description: IC REG CTRLR INTEL 1OUT 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 1.1V ~ 1.85V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 12V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® IV
Supplier Device Package: 24-TSSOP
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KST5551MTF KST5551MTF onsemi KST5551.pdf Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
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KST5551MTF KST5551MTF onsemi KST5551.pdf Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
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MC74VHCT86ADR2 MC74VHCT86ADR2 onsemi mc74vhct86a-d.pdf Description: IC GATE XOR 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.2V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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SN74LS280D SN74LS280D onsemi sn74ls280 Description: IC PARITY GEN/CHKER 9-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Number of Circuits: 9-Bit
Mounting Type: Surface Mount
Logic Type: Parity Generator/Checker
Operating Temperature: 0°C ~ 70°C
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
на замовлення 13259 шт:
термін постачання 21-31 дні (днів)
323+67.94 грн
Мінімальне замовлення: 323
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FDPF5N50NZF FDPF5N50NZF onsemi fdpf5n50nzf-d.pdf Description: MOSFET N-CH 500V 4.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
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NTD4857NT4G NTD4857NT4G onsemi ntd4857n.pdf Description: MOSFET N-CH 25V 12A/78A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
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NTD4857N-1G NTD4857N-1G onsemi ntd4857n.pdf Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
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NTD4856NT4G NTD4856NT4G onsemi ntd4856n-d.pdf Description: MOSFET N-CH 25V 13.3A/89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
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NTD4856N-1G NTD4856N-1G onsemi ntd4856n-d.pdf Description: MOSFET N-CH 25V 13.3A/89A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
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NTD4854NT4G NTD4854NT4G onsemi ntd4854n-d.pdf Description: MOSFET N-CH 25V 15.7A/128A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
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FFB10UP20STM FFB10UP20STM onsemi ffb10up20s-d.pdf Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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FFB10UP20STM FFB10UP20STM onsemi ffb10up20s-d.pdf Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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TL594CD TL594CD onsemi TL594-D.pdf Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 2
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SZ1SMB5951BT3G SZ1SMB5951BT3G onsemi 1smb5913bt3-d.pdf Description: DIODE ZENER 120V 3W SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 380 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Qualification: AEC-Q101
на замовлення 9411 шт:
термін постачання 21-31 дні (днів)
8+44.35 грн
10+36.68 грн
100+25.17 грн
500+18.68 грн
1000+17.03 грн
Мінімальне замовлення: 8
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ISL9V2540S3ST-F085C ISL9V2540S3ST-F085C onsemi ISL9V2540S3ST-F085C-D.PDF Description: IGBT 390V 15.5A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 610ns/3.64µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 15.1 nC
Grade: Automotive
Current - Collector (Ic) (Max): 15.5 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 166.7 W
Qualification: AEC-Q101
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CD4021BCCW CD4021BCCW onsemi CD4021BC-D.pdf Description: CD4021BCCW
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
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LM2575D2T-005 LM2575D2T-005 onsemi lm2575-d.pdf Description: IC REG SW 1A 5V STEPDOWN D2PAK
Packaging: Tube
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
286+79.78 грн
Мінімальне замовлення: 286
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LM2575D2T-012G LM2575D2T-012G onsemi lm2575-d.pdf Description: IC REG BUCK 12V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 12V
на замовлення 5897 шт:
термін постачання 21-31 дні (днів)
162+141.33 грн
Мінімальне замовлення: 162
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LM2575D2T-015G LM2575D2T-015G onsemi lm2575-d.pdf Description: IC REG BUCK 15V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
162+141.33 грн
Мінімальне замовлення: 162
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LM2575D2T-12R4 LM2575D2T-12R4 onsemi lm2575-d.pdf Description: IC REG BUCK 12V 1A D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 12V
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
162+141.33 грн
Мінімальне замовлення: 162
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LM2575D2T-015 LM2575D2T-015 onsemi lm2575-d.pdf Description: IC REG BUCK 15V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
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NB7NPQ1402E2MMUTWG NB7NPQ1402E2MMUTWG onsemi nb7npq1402e2m-d.pdf Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Number of Channels: 1 x 2:2
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 125mA
Data Rate (Max): 10Gbps
Supplier Device Package: 24-UQFN (2.5x2.5)
Signal Conditioning: Input Equalization
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+94.38 грн
Мінімальне замовлення: 5000
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NB7NPQ1402E2MMUTWG NB7NPQ1402E2MMUTWG onsemi nb7npq1402e2m-d.pdf Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Number of Channels: 1 x 2:2
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 125mA
Data Rate (Max): 10Gbps
Supplier Device Package: 24-UQFN (2.5x2.5)
Signal Conditioning: Input Equalization
на замовлення 9057 шт:
термін постачання 21-31 дні (днів)
2+293.03 грн
10+181.36 грн
25+155.00 грн
100+117.51 грн
250+103.79 грн
500+95.35 грн
1000+86.83 грн
2500+83.90 грн
Мінімальне замовлення: 2
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LC05512Z02XATBG onsemi Description: IC BAT PWR MGMT LI-ION 1C 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -40°C ~ 85°C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WLCSP (0.85x1.17)
Fault Protection: Over Current, Over Temperature
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LC05511Z04XATBG onsemi lc05511xa-d.pdf Description: IC BATT PROT LI-ION 1CELL 6WLCSP
Packaging: Bulk
Package / Case: 6-XFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WLCSP (0.85x1.17)
Fault Protection: Over Current, Over Voltage
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
989+22.79 грн
Мінімальне замовлення: 989
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LC05111C21MTTTG LC05111C21MTTTG onsemi LC05111CMT-D.PDF Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
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LC05711A91RATBG onsemi LC05711ARA-D.PDF Description: IC BATT PROTECTION 1CELL LIB
Packaging: Tape & Reel (TR)
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LC05711A01RATBG onsemi Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Tape & Reel (TR)
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LC05711A01RATBG onsemi Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Bulk
на замовлення 30500 шт:
термін постачання 21-31 дні (днів)
233+98.02 грн
Мінімальне замовлення: 233
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LC05732A01RATBG onsemi Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Tape & Reel (TR)
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LC05732A01RATBG onsemi Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Bulk
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
221+103.34 грн
Мінімальне замовлення: 221
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LC05711A91RATBG onsemi LC05711ARA-D.PDF Description: 1 CELL LIB PROTECTION IC
Packaging: Bulk
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
233+98.02 грн
Мінімальне замовлення: 233
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LC05732A91RATBG onsemi LC05732ARA-D.PDF Description: 1 CELL LIB PROTECTION IC
Packaging: Bulk
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
221+103.34 грн
Мінімальне замовлення: 221
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FDMF6820C FDMF6820C onsemi fdmf6820c-d.pdf Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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FDMF6820C FDMF6820C onsemi fdmf6820c-d.pdf Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
на замовлення 2064 шт:
термін постачання 21-31 дні (днів)
2+300.95 грн
10+200.57 грн
100+147.39 грн
500+116.42 грн
1000+115.87 грн
Мінімальне замовлення: 2
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FDMF6820B FDMF6820B onsemi fdmf6820b-d.pdf Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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FDMF6820B FDMF6820B onsemi fdmf6820b-d.pdf Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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SZSM24T1G SZSM24T1G onsemi SM05T1-D.PDF Description: TVS DIODE 24VWM 43VC SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MUN5231T1G MUN5231T1G onsemi dtc123e-d.pdf Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 137057 шт:
термін постачання 21-31 дні (днів)
10969+2.28 грн
Мінімальне замовлення: 10969
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FQU3N60TU FQD3N60.pdf
FQU3N60TU
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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FQD3N60TF FQD3N60.pdf
FQD3N60TF
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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MUN2141T1G dta115t-d.pdf
MUN2141T1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 100 kOhms
на замовлення 156000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11539+2.28 грн
Мінімальне замовлення: 11539
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MMUN2141LT1G dta115t-d.pdf
MMUN2141LT1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 100 kOhms
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11539+2.28 грн
Мінімальне замовлення: 11539
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MUN2140T1G dta144t-d.pdf
MUN2140T1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
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MUN2140T1G dta144t-d.pdf
MUN2140T1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
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FDS6294 fds6294-d.pdf
FDS6294
Виробник: onsemi
Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
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FDS6294 fds6294-d.pdf
FDS6294
Виробник: onsemi
Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
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FDS6298 fds6298-d.pdf
FDS6298
Виробник: onsemi
Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 15 V
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FDS6298 fds6298-d.pdf
FDS6298
Виробник: onsemi
Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 15 V
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FDS6299S FDS6299S.pdf
FDS6299S
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 21A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 15 V
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UC2844N description uc3844-d.pdf
UC2844N
Виробник: onsemi
Description: IC REG CTRLR PWM CM 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
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NTMFS005P03P8ZT1G ntmfs005p03p8z-d.pdf
NTMFS005P03P8ZT1G
Виробник: onsemi
Description: MOSFET P-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
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NTMFS005P03P8ZT1G ntmfs005p03p8z-d.pdf
NTMFS005P03P8ZT1G
Виробник: onsemi
Description: MOSFET P-CH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
Power Dissipation (Max): 900mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.76 грн
10+90.91 грн
100+64.04 грн
500+47.84 грн
1000+43.89 грн
Мінімальне замовлення: 3
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TRANSDIODES
Виробник: onsemi
Description: 3 TRANS TO-92 & 2 DIODES
Packaging: Bulk
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+999.47 грн
10+836.01 грн
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MUR820H MUR820%20SERIES_K2103.pdf
MUR820H
Виробник: onsemi
Description: DIODE STANDARD 200V 8A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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NCP370MUAITXG ncp370-d.pdf
NCP370MUAITXG
Виробник: onsemi
Description: IC PWR OVP POS/NEG N-CH 12LLGA
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-UFLGA Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: -28V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-LLGA (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
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NCP370MUAITXG ncp370-d.pdf
NCP370MUAITXG
Виробник: onsemi
Description: IC PWR OVP POS/NEG N-CH 12LLGA
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 12-UFLGA Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: -28V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-LLGA (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
на замовлення 236560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
495+46.06 грн
Мінімальне замовлення: 495
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SBT350-06J SBT350-06J.pdf
SBT350-06J
Виробник: onsemi
Description: DIODE ARR SCHOTT 60V 35A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 2053 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
133+157.36 грн
Мінімальне замовлення: 133
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SBT350-06J SBT350-06J.pdf
SBT350-06J
Виробник: onsemi
Description: DIODE ARR SCHOTT 60V 35A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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FAN5090MTCX FAN5090.pdf
FAN5090MTCX
Виробник: onsemi
Description: IC REG CTRLR INTEL 1OUT 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 1.1V ~ 1.85V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 12V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® IV
Supplier Device Package: 24-TSSOP
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KST5551MTF KST5551.pdf
KST5551MTF
Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
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KST5551MTF KST5551.pdf
KST5551MTF
Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
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MC74VHCT86ADR2 mc74vhct86a-d.pdf
MC74VHCT86ADR2
Виробник: onsemi
Description: IC GATE XOR 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.2V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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SN74LS280D sn74ls280
SN74LS280D
Виробник: onsemi
Description: IC PARITY GEN/CHKER 9-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Number of Circuits: 9-Bit
Mounting Type: Surface Mount
Logic Type: Parity Generator/Checker
Operating Temperature: 0°C ~ 70°C
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
на замовлення 13259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
323+67.94 грн
Мінімальне замовлення: 323
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FDPF5N50NZF fdpf5n50nzf-d.pdf
FDPF5N50NZF
Виробник: onsemi
Description: MOSFET N-CH 500V 4.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
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NTD4857NT4G ntd4857n.pdf
NTD4857NT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 12A/78A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
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NTD4857N-1G ntd4857n.pdf
NTD4857N-1G
Виробник: onsemi
Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
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NTD4856NT4G ntd4856n-d.pdf
NTD4856NT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 13.3A/89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
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NTD4856N-1G ntd4856n-d.pdf
NTD4856N-1G
Виробник: onsemi
Description: MOSFET N-CH 25V 13.3A/89A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
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NTD4854NT4G ntd4854n-d.pdf
NTD4854NT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 15.7A/128A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
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FFB10UP20STM ffb10up20s-d.pdf
FFB10UP20STM
Виробник: onsemi
Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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FFB10UP20STM ffb10up20s-d.pdf
FFB10UP20STM
Виробник: onsemi
Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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TL594CD TL594-D.pdf
TL594CD
Виробник: onsemi
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 2
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SZ1SMB5951BT3G 1smb5913bt3-d.pdf
SZ1SMB5951BT3G
Виробник: onsemi
Description: DIODE ZENER 120V 3W SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 380 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Qualification: AEC-Q101
на замовлення 9411 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.35 грн
10+36.68 грн
100+25.17 грн
500+18.68 грн
1000+17.03 грн
Мінімальне замовлення: 8
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ISL9V2540S3ST-F085C ISL9V2540S3ST-F085C-D.PDF
ISL9V2540S3ST-F085C
Виробник: onsemi
Description: IGBT 390V 15.5A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 610ns/3.64µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 15.1 nC
Grade: Automotive
Current - Collector (Ic) (Max): 15.5 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 166.7 W
Qualification: AEC-Q101
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CD4021BCCW CD4021BC-D.pdf
CD4021BCCW
Виробник: onsemi
Description: CD4021BCCW
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
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LM2575D2T-005 lm2575-d.pdf
LM2575D2T-005
Виробник: onsemi
Description: IC REG SW 1A 5V STEPDOWN D2PAK
Packaging: Tube
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
286+79.78 грн
Мінімальне замовлення: 286
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LM2575D2T-012G lm2575-d.pdf
LM2575D2T-012G
Виробник: onsemi
Description: IC REG BUCK 12V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 12V
на замовлення 5897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
162+141.33 грн
Мінімальне замовлення: 162
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LM2575D2T-015G lm2575-d.pdf
LM2575D2T-015G
Виробник: onsemi
Description: IC REG BUCK 15V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
162+141.33 грн
Мінімальне замовлення: 162
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LM2575D2T-12R4 lm2575-d.pdf
LM2575D2T-12R4
Виробник: onsemi
Description: IC REG BUCK 12V 1A D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 12V
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
162+141.33 грн
Мінімальне замовлення: 162
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LM2575D2T-015 lm2575-d.pdf
LM2575D2T-015
Виробник: onsemi
Description: IC REG BUCK 15V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
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NB7NPQ1402E2MMUTWG nb7npq1402e2m-d.pdf
NB7NPQ1402E2MMUTWG
Виробник: onsemi
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Number of Channels: 1 x 2:2
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 125mA
Data Rate (Max): 10Gbps
Supplier Device Package: 24-UQFN (2.5x2.5)
Signal Conditioning: Input Equalization
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+94.38 грн
Мінімальне замовлення: 5000
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NB7NPQ1402E2MMUTWG nb7npq1402e2m-d.pdf
NB7NPQ1402E2MMUTWG
Виробник: onsemi
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Number of Channels: 1 x 2:2
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 125mA
Data Rate (Max): 10Gbps
Supplier Device Package: 24-UQFN (2.5x2.5)
Signal Conditioning: Input Equalization
на замовлення 9057 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+293.03 грн
10+181.36 грн
25+155.00 грн
100+117.51 грн
250+103.79 грн
500+95.35 грн
1000+86.83 грн
2500+83.90 грн
Мінімальне замовлення: 2
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LC05512Z02XATBG
Виробник: onsemi
Description: IC BAT PWR MGMT LI-ION 1C 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -40°C ~ 85°C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WLCSP (0.85x1.17)
Fault Protection: Over Current, Over Temperature
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LC05511Z04XATBG lc05511xa-d.pdf
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WLCSP
Packaging: Bulk
Package / Case: 6-XFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WLCSP (0.85x1.17)
Fault Protection: Over Current, Over Voltage
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
989+22.79 грн
Мінімальне замовлення: 989
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LC05111C21MTTTG LC05111CMT-D.PDF
LC05111C21MTTTG
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
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LC05711A91RATBG LC05711ARA-D.PDF
Виробник: onsemi
Description: IC BATT PROTECTION 1CELL LIB
Packaging: Tape & Reel (TR)
товару немає в наявності
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LC05711A01RATBG
Виробник: onsemi
Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Tape & Reel (TR)
товару немає в наявності
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LC05711A01RATBG
Виробник: onsemi
Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Bulk
на замовлення 30500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
233+98.02 грн
Мінімальне замовлення: 233
В кошику  од. на суму  грн.
LC05732A01RATBG
Виробник: onsemi
Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Tape & Reel (TR)
товару немає в наявності
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LC05732A01RATBG
Виробник: onsemi
Description: IC BATT PROTECTION 1CELL ECP30
Packaging: Bulk
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
221+103.34 грн
Мінімальне замовлення: 221
В кошику  од. на суму  грн.
LC05711A91RATBG LC05711ARA-D.PDF
Виробник: onsemi
Description: 1 CELL LIB PROTECTION IC
Packaging: Bulk
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
233+98.02 грн
Мінімальне замовлення: 233
В кошику  од. на суму  грн.
LC05732A91RATBG LC05732ARA-D.PDF
Виробник: onsemi
Description: 1 CELL LIB PROTECTION IC
Packaging: Bulk
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
221+103.34 грн
Мінімальне замовлення: 221
В кошику  од. на суму  грн.
FDMF6820C fdmf6820c-d.pdf
FDMF6820C
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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FDMF6820C fdmf6820c-d.pdf
FDMF6820C
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
на замовлення 2064 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+300.95 грн
10+200.57 грн
100+147.39 грн
500+116.42 грн
1000+115.87 грн
Мінімальне замовлення: 2
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FDMF6820B fdmf6820b-d.pdf
FDMF6820B
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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FDMF6820B fdmf6820b-d.pdf
FDMF6820B
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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SZSM24T1G SM05T1-D.PDF
SZSM24T1G
Виробник: onsemi
Description: TVS DIODE 24VWM 43VC SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MUN5231T1G dtc123e-d.pdf
MUN5231T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 137057 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10969+2.28 грн
Мінімальне замовлення: 10969
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