| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVMFWS004N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS004N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTMFSCH0D4N04XMTWG | onsemi |
Description: MOSFET - POWER, SINGLEN-CHANNEL,Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.5V @ 350µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 529A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTMFSCH0D4N04XMTWG | onsemi |
Description: MOSFET - POWER, SINGLEN-CHANNEL,Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.5V @ 350µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 529A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMDF4N01HDR2 | onsemi |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk |
на замовлення 117500 шт: термін постачання 21-31 дні (днів) |
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NTMFS4D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 133µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NTMFS4D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 133µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V |
на замовлення 5123 шт: термін постачання 21-31 дні (днів) |
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NTMFS3D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLDrive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.6V @ 184µA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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NTMFS3D0N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FLInput Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.6V @ 184µA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 63979 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C466NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 14A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 40W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C466NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 14A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 40W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5905 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H836NT3G | onsemi |
Description: T8 80V SO8FLTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 95µA Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMFS6H836NT3G | onsemi |
Description: T8 80V SO8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 3970 шт: термін постачання 21-31 дні (днів) |
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NLV74VHCT00ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOP Qualification: AEC-Q100 Current - Quiescent (Max): 2 µA Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Input Logic Level - Low: 0.53V ~ 0.8V Input Logic Level - High: 1.4V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 3V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHCT00ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOP Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Input Logic Level - Low: 0.53V ~ 0.8V Input Logic Level - High: 1.4V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 3V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Current - Quiescent (Max): 2 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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1N6287AG | onsemi |
Description: TVS DIODE 40.2VWM 64.8VC AXIALPackaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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FSD176MRTLDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6LPower (Watts): 90 W Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: TO-220F-6L (L-Forming) Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 67kHz Duty Cycle: 67% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-6 Full Pack, Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTMFC013NP10M5L | onsemi |
Description: MOSFET N/P-CH 100V 9A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta), 102W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA Supplier Device Package: 8-WDFN (5x6) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTMFC013NP10M5L | onsemi |
Description: MOSFET N/P-CH 100V 9A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta), 102W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA Supplier Device Package: 8-WDFN (5x6) |
на замовлення 2548 шт: термін постачання 21-31 дні (днів) |
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UHB100SC12E1BC3N | onsemi |
Description: MOSFET 2P-CH 1200V 100A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 P-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 417W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V Vgs(th) (Max) @ Id: 6V @ 40mA Supplier Device Package: Module |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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NV24C64MUW3VTBG | onsemi |
Description: IC EEPROM 64KBIT I2C 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NV24C64MUW3VTBG | onsemi |
Description: IC EEPROM 64KBIT I2C 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 Qualification: AEC-Q101 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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| MR5060 | onsemi |
Description: LED RED DIFFUSED T-1 T/H R/ALens Size: 3.05mm Dia Lens Style: Round with Domed Top Lens Transparency: Diffused Supplier Device Package: T-1 Height (Max): 7.37mm Current - Test: 13mA Lens Color: Red Voltage - Forward (Vf) (Typ): 5V Configuration: Standard Millicandela Rating: 1.5mcd Mounting Type: Through Hole, Right Angle Color: Red Package / Case: Radial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC245ADWR2G-Q | onsemi |
Description: IC TXRX 2V/6V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC |
на замовлення 38000 шт: термін постачання 21-31 дні (днів) |
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MC74HC245ADWR2G-Q | onsemi |
Description: IC TXRX 2V/6V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC |
на замовлення 38980 шт: термін постачання 21-31 дні (днів) |
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CNW136 | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-DIPPackaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Input Type: DC Current - Output / Channel: 10mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||||||||||||||
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CNW136S | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-SMDPackaging: Bag Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Input Type: DC Current - Output / Channel: 10mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||||||||||||||
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CAT25512HU5E-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 64K x 8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CAT25512HU5E-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 64K x 8 |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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MC74HC574ADWR2G-Q | onsemi |
Description: OCTAL D-TYPE 3-STATE FFPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC574ADWR2G-Q | onsemi |
Description: OCTAL D-TYPE 3-STATE FFPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP130AMX080TCGEVB | onsemi |
Description: NCP130AMX080TC BIAS RAIL LDO REG Channels per IC: 1 - Single Utilized IC / Part: NCP130 Regulator Type: Positive Fixed Current - Output: 850mA Voltage - Input: 0.8V ~ 5.5V Voltage - Output: 0.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP130BMX080TCGEVB | onsemi |
Description: NCP130BMX080TCG BIAS RAIL LDO RE Channels per IC: 1 - Single Utilized IC / Part: NCP130 Regulator Type: Positive Fixed Current - Output: 850mA Voltage - Input: 0.8V ~ 5.5V Voltage - Output: 0.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP171AMX080060TCGEVB | onsemi |
Description: NCP171: LDO REGULATOR, ULTRA-LOWPackaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8130BMX080TCGEVB | onsemi |
Description: NCV8130BMX080TCG BIAS RAIL LDO R Channels per IC: 1 - Single Utilized IC / Part: NCV8130 Regulator Type: Positive Fixed Voltage - Output: 0.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP163ASN280T1GEVB | onsemi |
Description: NCP163 SOT23 EVAL BOARD Channels per IC: 1 - Single Utilized IC / Part: NCP163 Regulator Type: Positive Fixed Current - Output: 700mA Voltage - Input: 2.2V ~ 5.5V Voltage - Output: 2.8V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FSBB30CH60F | onsemi |
Description: IGBT IPM 600V 30A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 30 A Voltage: 600 V |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
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FSBB30CH60F | onsemi |
Description: IGBT IPM 600V 30A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 30 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C43ET1G | onsemi |
Description: DIODE ZENER 43V 225MW SOT23-3Tolerance: ±7% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C43ET1G | onsemi |
Description: DIODE ZENER 43V 225MW SOT23-3Tolerance: ±7% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V Qualification: AEC-Q101 |
на замовлення 2930 шт: термін постачання 21-31 дні (днів) |
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BZX84C43LT1 | onsemi |
Description: DIODE ZENER 43V 225MW SOT23-3Tolerance: ±7% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V |
на замовлення 231000 шт: термін постачання 21-31 дні (днів) |
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1N4740A | onsemi |
Description: DIODE ZENER 10V 1W DO41Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V |
на замовлення 21407 шт: термін постачання 21-31 дні (днів) |
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MC74HC4053ADR2G | onsemi |
Description: IC SWITCH SPDT X 3 100OHM 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 120MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 50pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 |
на замовлення 178863 шт: термін постачання 21-31 дні (днів) |
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MC74HC4053ADWR2G | onsemi |
Description: IC SWITCH SPDT X 3 100OHM 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 120MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 50pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 |
на замовлення 20961 шт: термін постачання 21-31 дні (днів) |
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CNY17F3VM | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPPackaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 30955 шт: термін постачання 21-31 дні (днів) |
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CNY17F3300W | onsemi |
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIPCurrent - DC Forward (If) (Max): 100 mA Number of Channels: 1 Rise / Fall Time (Typ): 1µs, 2µs Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5300Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CNY17F3S | onsemi |
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMDCurrent - DC Forward (If) (Max): 100 mA Number of Channels: 1 Rise / Fall Time (Typ): 1µs, 2µs Turn On / Turn Off Time (Typ): 2µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 6-SMD Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5300Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SMD, Gull Wing Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CNY17F3W | onsemi |
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIPPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 1µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MB8S | onsemi |
Description: BRIDGE RECT 1P 800V 500MA 4-SOICPackaging: Tape & Reel (TR) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 852000 шт: термін постачання 21-31 дні (днів) |
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MB8S | onsemi |
Description: BRIDGE RECT 1P 800V 500MA 4-SOICPackaging: Cut Tape (CT) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 853184 шт: термін постачання 21-31 дні (днів) |
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KA741DTF | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 8SOICCurrent - Output / Channel: 25 mA Number of Circuits: 1 Supplier Device Package: 8-SOIC Voltage - Input Offset: 2 mV Current - Input Bias: 80 nA Slew Rate: 0.5V/µs Current - Supply: 1.5mA Operating Temperature: 0°C ~ 70°C Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FGH4L40T120SWD | onsemi |
Description: 1200V/40A FS7 IGBT NSCR TO247Power - Max: 384 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 80 A Gate Charge: 148 nC Test Condition: 600V, 40A, 4.7Ohm, 15V Switching Energy: 1.52mJ (on), 1.13mJ (off) Td (on/off) @ 25°C: 26.8ns/121.6ns IGBT Type: Field Stop Supplier Device Package: TO-247-4L Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 40A Reverse Recovery Time (trr): 192.54 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 1350 шт: термін постачання 21-31 дні (днів) |
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CAV24C04C4ATR | onsemi |
Description: EEPROM SERIAL 4-KB I2C - AUTOMOTPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 512 x 8 Qualification: AEC-Q100 |
на замовлення 99990 шт: термін постачання 21-31 дні (днів) |
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CAV24C04C4ATR | onsemi |
Description: EEPROM SERIAL 4-KB I2C - AUTOMOTPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 512 x 8 Qualification: AEC-Q100 |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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MC74HC4053ADTR2G | onsemi |
Description: IC SWITCH SPDTX3 100OHM 16TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 120MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 50pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 |
на замовлення 42873 шт: термін постачання 21-31 дні (днів) |
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| FSDM0565RBIWDTU | onsemi |
Description: IC OFFLINE SWITCH FLYBACK I2PAKPackaging: Tube Package / Case: TO-262-6 Formed Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Duty Cycle: 82% Frequency - Switching: 66kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: I2-PAK-6 (Forming) Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12 V Power (Watts): 70 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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74AC16244SSCX | onsemi |
Description: IC BUFFER NON-INVERT 6V 48-SSOPPackaging: Tape & Reel (TR) Package / Case: 48-BSSOP (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SNXH150B120H3Q2F2PG-N | onsemi |
Description: GEN III Q2BOOST 1100VPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A NTC Thermistor: Yes Supplier Device Package: 35-PIM (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 279 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 19137 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTB12-800CW3G | onsemi |
Description: TRIAC 800V 12A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 45 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.1 V Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V |
на замовлення 6571 шт: термін постачання 21-31 дні (днів) |
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BZX85C47 | onsemi |
Description: DIODE ZENER 47V 1.3W DO41GPackaging: Bulk Current - Reverse Leakage @ Vr: 500 nA @ 36 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1.3 W Supplier Device Package: DO-41G Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 47 V Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% |
на замовлення 28500 шт: термін постачання 21-31 дні (днів) |
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| NVMFWS004N04XMT1G |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 69.90 грн |
| 100+ | 46.67 грн |
| 500+ | 34.44 грн |
| NVMFWS004N04XMT1G |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 30.91 грн |
| 3000+ | 27.48 грн |
| NTMFSCH0D4N04XMTWG |
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Виробник: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| NTMFSCH0D4N04XMTWG |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
товару немає в наявності
В кошику
од. на суму грн.
| MMDF4N01HDR2 |
![]() |
на замовлення 117500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1150+ | 17.28 грн |
| NTMFS4D0N08XT1G |
![]() |
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 38.07 грн |
| 3000+ | 33.98 грн |
| 4500+ | 32.62 грн |
| NTMFS4D0N08XT1G |
![]() |
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
на замовлення 5123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 128.05 грн |
| 10+ | 78.52 грн |
| 100+ | 52.95 грн |
| 500+ | 39.40 грн |
| NTMFS3D0N08XT1G |
![]() |
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Description: T10 80V STD NCH MOSFET SO8FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 52.83 грн |
| 3000+ | 47.74 грн |
| 4500+ | 47.09 грн |
| NTMFS3D0N08XT1G |
![]() |
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: T10 80V STD NCH MOSFET SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 63979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 153.18 грн |
| 10+ | 94.03 грн |
| 100+ | 71.92 грн |
| 500+ | 54.19 грн |
| NTMFD5C466NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 25.24 грн |
| 3000+ | 22.36 грн |
| 4500+ | 21.37 грн |
| NTMFD5C466NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 14A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5905 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.34 грн |
| 10+ | 54.62 грн |
| 100+ | 36.11 грн |
| 500+ | 26.43 грн |
| NVMFS6H836NT3G |
![]() |
Виробник: onsemi
Description: T8 80V SO8FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
FET Type: N-Channel
Description: T8 80V SO8FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NVMFS6H836NT3G |
![]() |
Виробник: onsemi
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 80.34 грн |
| 100+ | 55.17 грн |
| 500+ | 41.12 грн |
| 1000+ | 38.60 грн |
| NLV74VHCT00ADTR2G |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 14.98 грн |
| NLV74VHCT00ADTR2G |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.53V ~ 0.8V
Input Logic Level - High: 1.4V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Quiescent (Max): 2 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| 1N6287AG |
![]() |
Виробник: onsemi
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1040+ | 19.28 грн |
| FSD176MRTLDTU |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
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| NTMFC013NP10M5L |
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Виробник: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
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Мінімальне замовлення: 3000 шт
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| NTMFC013NP10M5L |
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Виробник: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
на замовлення 2548 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 238.02 грн |
| 10+ | 149.86 грн |
| 100+ | 104.63 грн |
| 500+ | 85.71 грн |
| UHB100SC12E1BC3N |
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Виробник: onsemi
Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 12915.40 грн |
| 24+ | 10702.22 грн |
| NV24C64MUW3VTBG |
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Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
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| NV24C64MUW3VTBG |
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Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 11+ | 29.65 грн |
| 25+ | 28.93 грн |
| 50+ | 26.59 грн |
| 100+ | 26.03 грн |
| 250+ | 25.27 грн |
| 500+ | 24.28 грн |
| 1000+ | 23.72 грн |
| MR5060 |
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Виробник: onsemi
Description: LED RED DIFFUSED T-1 T/H R/A
Lens Size: 3.05mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Diffused
Supplier Device Package: T-1
Height (Max): 7.37mm
Current - Test: 13mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 5V
Configuration: Standard
Millicandela Rating: 1.5mcd
Mounting Type: Through Hole, Right Angle
Color: Red
Package / Case: Radial
Packaging: Bulk
Description: LED RED DIFFUSED T-1 T/H R/A
Lens Size: 3.05mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Diffused
Supplier Device Package: T-1
Height (Max): 7.37mm
Current - Test: 13mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 5V
Configuration: Standard
Millicandela Rating: 1.5mcd
Mounting Type: Through Hole, Right Angle
Color: Red
Package / Case: Radial
Packaging: Bulk
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Мінімальне замовлення: 250 шт
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| MC74HC245ADWR2G-Q |
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Виробник: onsemi
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 38000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 21.44 грн |
| 2000+ | 19.97 грн |
| MC74HC245ADWR2G-Q |
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Виробник: onsemi
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 38980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 10+ | 30.71 грн |
| 25+ | 27.60 грн |
| 100+ | 22.64 грн |
| 250+ | 21.08 грн |
| 500+ | 20.14 грн |
| CNW136 |
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Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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Мінімальне замовлення: 40 шт
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| CNW136S |
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Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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Мінімальне замовлення: 40 шт
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| CAT25512HU5E-GT3 |
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Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| CAT25512HU5E-GT3 |
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Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 75.41 грн |
| 10+ | 67.78 грн |
| 25+ | 65.93 грн |
| 50+ | 60.56 грн |
| 100+ | 59.21 грн |
| 250+ | 57.41 грн |
| 500+ | 55.14 грн |
| 1000+ | 53.81 грн |
| MC74HC574ADWR2G-Q |
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Виробник: onsemi
Description: OCTAL D-TYPE 3-STATE FF
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: OCTAL D-TYPE 3-STATE FF
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
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Мінімальне замовлення: 1000 шт
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| MC74HC574ADWR2G-Q |
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Виробник: onsemi
Description: OCTAL D-TYPE 3-STATE FF
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: OCTAL D-TYPE 3-STATE FF
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
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| NCP130AMX080TCGEVB |
Виробник: onsemi
Description: NCP130AMX080TC BIAS RAIL LDO REG
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
Description: NCP130AMX080TC BIAS RAIL LDO REG
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
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| NCP130BMX080TCGEVB |
Виробник: onsemi
Description: NCP130BMX080TCG BIAS RAIL LDO RE
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
Description: NCP130BMX080TCG BIAS RAIL LDO RE
Channels per IC: 1 - Single
Utilized IC / Part: NCP130
Regulator Type: Positive Fixed
Current - Output: 850mA
Voltage - Input: 0.8V ~ 5.5V
Voltage - Output: 0.8V
Packaging: Bulk
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| NCV8130BMX080TCGEVB |
Виробник: onsemi
Description: NCV8130BMX080TCG BIAS RAIL LDO R
Channels per IC: 1 - Single
Utilized IC / Part: NCV8130
Regulator Type: Positive Fixed
Voltage - Output: 0.8V
Packaging: Bulk
Description: NCV8130BMX080TCG BIAS RAIL LDO R
Channels per IC: 1 - Single
Utilized IC / Part: NCV8130
Regulator Type: Positive Fixed
Voltage - Output: 0.8V
Packaging: Bulk
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| NCP163ASN280T1GEVB |
Виробник: onsemi
Description: NCP163 SOT23 EVAL BOARD
Channels per IC: 1 - Single
Utilized IC / Part: NCP163
Regulator Type: Positive Fixed
Current - Output: 700mA
Voltage - Input: 2.2V ~ 5.5V
Voltage - Output: 2.8V
Packaging: Bulk
Description: NCP163 SOT23 EVAL BOARD
Channels per IC: 1 - Single
Utilized IC / Part: NCP163
Regulator Type: Positive Fixed
Current - Output: 700mA
Voltage - Input: 2.2V ~ 5.5V
Voltage - Output: 2.8V
Packaging: Bulk
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| FSBB30CH60F |
![]() |
Виробник: onsemi
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 1722.21 грн |
| FSBB30CH60F |
![]() |
Виробник: onsemi
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
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| SZBZX84C43ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
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| SZBZX84C43ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.71 грн |
| 28+ | 10.89 грн |
| 100+ | 6.22 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.40 грн |
| BZX84C43LT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
на замовлення 231000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7869+ | 2.69 грн |
| 1N4740A |
![]() |
Виробник: onsemi
Description: DIODE ZENER 10V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
на замовлення 21407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.28 грн |
| 30+ | 10.29 грн |
| 100+ | 6.39 грн |
| 500+ | 4.41 грн |
| 1000+ | 3.89 грн |
| 3000+ | 3.23 грн |
| 6000+ | 2.85 грн |
| 12000+ | 2.58 грн |
| MC74HC4053ADR2G |
![]() |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
на замовлення 178863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 834+ | 24.23 грн |
| MC74HC4053ADWR2G |
![]() |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
на замовлення 20961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 480+ | 42.40 грн |
| CNY17F3VM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 30955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 52.63 грн |
| 10+ | 30.33 грн |
| 100+ | 20.07 грн |
| 500+ | 15.06 грн |
| 1000+ | 13.90 грн |
| 2000+ | 12.96 грн |
| 5000+ | 11.76 грн |
| 10000+ | 11.18 грн |
| 25000+ | 10.56 грн |
| CNY17F3300W |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
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| CNY17F3S |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
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| CNY17F3W |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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| MB8S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 852000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.52 грн |
| 6000+ | 8.36 грн |
| MB8S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 853184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 12+ | 26.85 грн |
| 100+ | 17.13 грн |
| 500+ | 12.16 грн |
| 1000+ | 10.90 грн |
| KA741DTF |
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Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Current - Output / Channel: 25 mA
Number of Circuits: 1
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 80 nA
Slew Rate: 0.5V/µs
Current - Supply: 1.5mA
Operating Temperature: 0°C ~ 70°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Current - Output / Channel: 25 mA
Number of Circuits: 1
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 2 mV
Current - Input Bias: 80 nA
Slew Rate: 0.5V/µs
Current - Supply: 1.5mA
Operating Temperature: 0°C ~ 70°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FGH4L40T120SWD |
![]() |
Виробник: onsemi
Description: 1200V/40A FS7 IGBT NSCR TO247
Power - Max: 384 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 148 nC
Test Condition: 600V, 40A, 4.7Ohm, 15V
Switching Energy: 1.52mJ (on), 1.13mJ (off)
Td (on/off) @ 25°C: 26.8ns/121.6ns
IGBT Type: Field Stop
Supplier Device Package: TO-247-4L
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 40A
Reverse Recovery Time (trr): 192.54 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 1200V/40A FS7 IGBT NSCR TO247
Power - Max: 384 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 148 nC
Test Condition: 600V, 40A, 4.7Ohm, 15V
Switching Energy: 1.52mJ (on), 1.13mJ (off)
Td (on/off) @ 25°C: 26.8ns/121.6ns
IGBT Type: Field Stop
Supplier Device Package: TO-247-4L
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 40A
Reverse Recovery Time (trr): 192.54 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 1350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 482.33 грн |
| 10+ | 314.01 грн |
| 450+ | 194.30 грн |
| 900+ | 179.84 грн |
| CAV24C04C4ATR |
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Виробник: onsemi
Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
на замовлення 99990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.78 грн |
| 15+ | 20.95 грн |
| 25+ | 20.42 грн |
| 50+ | 18.78 грн |
| 100+ | 18.39 грн |
| 250+ | 17.86 грн |
| 500+ | 17.17 грн |
| 1000+ | 16.78 грн |
| CAV24C04C4ATR |
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Виробник: onsemi
Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 14.27 грн |
| 10000+ | 13.40 грн |
| MC74HC4053ADTR2G |
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Виробник: onsemi
Description: IC SWITCH SPDTX3 100OHM 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Description: IC SWITCH SPDTX3 100OHM 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
на замовлення 42873 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 997+ | 20.19 грн |
| FSDM0565RBIWDTU |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK I2PAK
Packaging: Tube
Package / Case: TO-262-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 82%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: I2-PAK-6 (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 70 W
Description: IC OFFLINE SWITCH FLYBACK I2PAK
Packaging: Tube
Package / Case: TO-262-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 82%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: I2-PAK-6 (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 70 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 74AC16244SSCX |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 48-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-SSOP
Description: IC BUFFER NON-INVERT 6V 48-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-SSOP
товару немає в наявності
В кошику
од. на суму грн.
| SNXH150B120H3Q2F2PG-N |
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Виробник: onsemi
Description: GEN III Q2BOOST 1100V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 35-PIM (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 279 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19137 pF @ 20 V
Description: GEN III Q2BOOST 1100V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 35-PIM (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 279 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19137 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| BTB12-800CW3G |
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Виробник: onsemi
Description: TRIAC 800V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 45 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
Description: TRIAC 800V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 45 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
на замовлення 6571 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 349+ | 57.88 грн |
| BZX85C47 |
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Виробник: onsemi
Description: DIODE ZENER 47V 1.3W DO41G
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Description: DIODE ZENER 47V 1.3W DO41G
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
на замовлення 28500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6045+ | 3.39 грн |



































