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RD0106T-TL-H RD0106T-TL-H onsemi RD0106T.pdf Description: DIODE GEN PURP 600V 1A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: TP-FA
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SB10-03A2-AT1 SB10-03A2-AT1 onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-03A2-BT SB10-03A2-BT onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-03A3-AT1 SB10-03A3-AT1 onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-03A3-BT SB10-03A3-BT onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-05A2-BT SB10-05A2-BT onsemi SB10-05A2%2CA3.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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SB10-05A3-AT1 SB10-05A3-AT1 onsemi SB10-05A2%2CA3.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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SB11-04HP-TR-E SB11-04HP-TR-E onsemi SB11-04HP.pdf Description: DIODE SCHOTTKY 40V 1.1A SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.1A
Supplier Device Package: SMD
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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SB3003CH-TL-E SB3003CH-TL-E onsemi sb3003ch-d.pdf Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 42 µA @ 15 V
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SB80W10T-TL-H SB80W10T-TL-H onsemi ena1817-d.pdf Description: DIODE ARRAY SCHOTTKY 100V TPFA
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SBH15-03-TR-E onsemi Description: DIODE SCHOTTKY 1.5A 30V
Packaging: Tape & Reel (TR)
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SBM30-03-TR-E onsemi Description: DIODE SCHOTTKY 3A 30V
Packaging: Tape & Reel (TR)
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TF408-2-TL-H onsemi Description: JFET N-CH 10MA 3USFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3-USFP
Part Status: Obsolete
Power - Max: 30 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
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TF408-3-TL-H onsemi Description: JFET N-CH 10MA 3USFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3-USFP
Part Status: Obsolete
Power - Max: 30 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
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15C01C-TB-E 15C01C-TB-E onsemi en7504-d.pdf Description: TRANS NPN 15V 0.7A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: 3-CP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
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15GN01MA-TL-E onsemi ena1100-d.pdf Description: RF TRANS NPN 8V 1.5GHZ 3-MCP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Gull Wing
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Supplier Device Package: 3-MCP
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15GN03CA-TB-E 15GN03CA-TB-E onsemi ena1106-d.pdf Description: RF TRANS NPN 10V 1.5GHZ 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
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15GN03MA-TL-E 15GN03MA-TL-E onsemi ena1108-d.pdf Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+7.85 грн
6000+6.88 грн
9000+6.53 грн
15000+5.76 грн
21000+5.54 грн
Мінімальне замовлення: 3000
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1SV233-TB-E 1SV233-TB-E onsemi 1SV233.pdf Description: RF DIODE PIN 50V 150MW 3CP
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1SV234-TB-E 1SV234-TB-E onsemi 1SV234.pdf Description: RF DIODE PIN 50V 150MW CP
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1SV246-TL-E 1SV246-TL-E onsemi 1SV246.pdf Description: RF DIODE PIN 50V 100MW MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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1SV263-TL-E 1SV263-TL-E onsemi en4510-d.pdf Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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1SV264-TL-E 1SV264-TL-E onsemi 1sv264-d.pdf Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.42 грн
Мінімальне замовлення: 3000
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1SV267-TB-E 1SV267-TB-E onsemi en4514-d.pdf Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
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2SA1179N6-CPA-TB-E 2SA1179N6-CPA-TB-E onsemi en7198-d.pdf Description: TRANS PNP 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 180MHz
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SA1419S-TD-H 2SA1419S-TD-H onsemi 2SA1419%2C2SC3649.pdf Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SA1419T-TD-H 2SA1419T-TD-H onsemi 2SA1419-D.PDF Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SB815-6-TB-E 2SB815-6-TB-E onsemi en694-d.pdf Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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2SB815-7-TB-E 2SB815-7-TB-E onsemi EN694-D.html Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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2SC2812N6-CPA-TB-E 2SC2812N6-CPA-TB-E onsemi en7198-d.pdf Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SC3649T-TD-H 2SC3649T-TD-H onsemi en2007-d.pdf Description: TRANS NPN 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SC4211-7-TL-E onsemi Description: TRANS NPN 50V 0.15A MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Supplier Device Package: MCP
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2SC5231A-9-TL-E onsemi 2SC5231A.pdf Description: RF TRANS NPN 10V 7GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Gull Wing
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 8.5dB @ 1GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
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2SC5277A-2-TL-E 2SC5277A-2-TL-E onsemi Description: RF TRANS NPN 10V 8GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 10dB ~ 5.5dB @ 1.5GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
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2SC5536A-TL-H 2SC5536A-TL-H onsemi ena1092-d.pdf Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Supplier Device Package: 3-SSFP
Part Status: Obsolete
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2SC5646A-TL-H 2SC5646A-TL-H onsemi ena1120-d.pdf Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 10.5dB @ 2GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Frequency - Transition: 10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 3-SSFP
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2SD1618S-TD-E 2SD1618S-TD-E onsemi 2SD1618.pdf Description: TRANS NPN 15V 0.7A SOT89-3
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2SD1624S-TD-E 2SD1624S-TD-E onsemi en2019-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+18.69 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SD1624T-TD-H 2SD1624T-TD-H onsemi en2019-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SD1628F-TD-E 2SD1628F-TD-E onsemi en1781-d.pdf Description: TRANS NPN 20V 5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
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2SK3666-4-TB-E 2SK3666-4-TB-E onsemi 2SK3666.pdf Description: JFET N-CH 30V 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
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2SK3796-2-TL-E 2SK3796-2-TL-E onsemi 2SK3796.pdf Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
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2SK3796-4-TL-E 2SK3796-4-TL-E onsemi 2SK3796.pdf Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
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2SK545-11D-TB-E 2SK545-11D-TB-E onsemi 2SK545-D.PDF Description: JFET N-CH 1MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 125 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 60 µA @ 10 V
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2SK932-23-TB-E 2SK932-23-TB-E onsemi 2sk932-d.pdf Description: JFET N-CH 50MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+9.98 грн
6000+8.78 грн
9000+8.36 грн
15000+7.39 грн
21000+7.13 грн
30000+6.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SK932-24-TB-E 2SK932-24-TB-E onsemi EN2841-D.html Description: JFET N-CH 50MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+13.77 грн
6000+12.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
30A02MH-TL-H 30A02MH-TL-H onsemi 30A02MH-D.PDF Description: TRANS PNP 30V 700MA MCPH3
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30C02MH-TL-E 30C02MH-TL-E onsemi en7364-d.pdf Description: TRANS NPN 30V 0.7A 3-MCPH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 540MHz
Supplier Device Package: 3-MCPH
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 600 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
50A02CH-TL-H 50A02CH-TL-H onsemi 50a02ch-d.pdf Description: TRANS PNP 50V 500MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 690MHz
Supplier Device Package: 3-CPH
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
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50A02SS-TL-E 50A02SS-TL-E onsemi en7491-d.pdf Description: TRANS PNP 50V 0.4A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 690MHz
Supplier Device Package: 3-SSFP
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+5.19 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
55GN01MA-TL-E 55GN01MA-TL-E onsemi ena1114-d.pdf Description: RF TRANS NPN 10V 5.5GHZ 3-MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB @ 1GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-MCP
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5LN01C-TB-H 5LN01C-TB-H onsemi 5LN01C.pdf Description: MOSFET N-CH 50V 100MA 3CP
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5LN01SS-TL-H 5LN01SS-TL-H onsemi 5LN01SS.pdf Description: MOSFET N-CH 50V 100MA 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 3-SSFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
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5LP01C-TB-E 5LP01C-TB-E onsemi 5LP01C.pdf Description: MOSFET P-CH 50V 70MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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5LP01C-TB-H 5LP01C-TB-H onsemi 5LP01C.pdf Description: MOSFET P-CH 50V 70MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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CAT24C04C4ATR CAT24C04C4ATR onsemi cat24c01-d.pdf Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+8.60 грн
10000+8.08 грн
15000+7.96 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CAT24C08C4ATR CAT24C08C4ATR onsemi cat24c01-d.pdf Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 735000 шт:
термін постачання 21-31 дні (днів)
5000+8.09 грн
10000+7.60 грн
15000+7.49 грн
25000+6.90 грн
35000+6.82 грн
50000+6.73 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CAT24C16C4ATR CAT24C16C4ATR onsemi cat24c01-d.pdf Description: IC EEPROM 16KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 185000 шт:
термін постачання 21-31 дні (днів)
5000+8.96 грн
10000+8.42 грн
15000+8.30 грн
25000+7.64 грн
35000+7.55 грн
50000+7.45 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CAT24C32TSI-T3 CAT24C32TSI-T3 onsemi CAT24C32.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 5-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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CAT24C512HU5IGT3 CAT24C512HU5IGT3 onsemi cat24c512-d.pdf Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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RD0106T-TL-H RD0106T.pdf
RD0106T-TL-H
Виробник: onsemi
Description: DIODE GEN PURP 600V 1A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: TP-FA
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SB10-03A2-AT1 SB10-03A2%2CA3.pdf
SB10-03A2-AT1
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-03A2-BT SB10-03A2%2CA3.pdf
SB10-03A2-BT
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-03A3-AT1 SB10-03A2%2CA3.pdf
SB10-03A3-AT1
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-03A3-BT SB10-03A2%2CA3.pdf
SB10-03A3-BT
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SB10-05A2-BT SB10-05A2%2CA3.pdf
SB10-05A2-BT
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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SB10-05A3-AT1 SB10-05A2%2CA3.pdf
SB10-05A3-AT1
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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SB11-04HP-TR-E SB11-04HP.pdf
SB11-04HP-TR-E
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1.1A SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.1A
Supplier Device Package: SMD
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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SB3003CH-TL-E sb3003ch-d.pdf
SB3003CH-TL-E
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 42 µA @ 15 V
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SB80W10T-TL-H ena1817-d.pdf
SB80W10T-TL-H
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 100V TPFA
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SBH15-03-TR-E
Виробник: onsemi
Description: DIODE SCHOTTKY 1.5A 30V
Packaging: Tape & Reel (TR)
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SBM30-03-TR-E
Виробник: onsemi
Description: DIODE SCHOTTKY 3A 30V
Packaging: Tape & Reel (TR)
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TF408-2-TL-H
Виробник: onsemi
Description: JFET N-CH 10MA 3USFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3-USFP
Part Status: Obsolete
Power - Max: 30 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
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TF408-3-TL-H
Виробник: onsemi
Description: JFET N-CH 10MA 3USFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3-USFP
Part Status: Obsolete
Power - Max: 30 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
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15C01C-TB-E en7504-d.pdf
15C01C-TB-E
Виробник: onsemi
Description: TRANS NPN 15V 0.7A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: 3-CP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
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15GN01MA-TL-E ena1100-d.pdf
Виробник: onsemi
Description: RF TRANS NPN 8V 1.5GHZ 3-MCP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Gull Wing
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Supplier Device Package: 3-MCP
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15GN03CA-TB-E ena1106-d.pdf
15GN03CA-TB-E
Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
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15GN03MA-TL-E ena1108-d.pdf
15GN03MA-TL-E
Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.85 грн
6000+6.88 грн
9000+6.53 грн
15000+5.76 грн
21000+5.54 грн
Мінімальне замовлення: 3000
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1SV233-TB-E 1SV233.pdf
1SV233-TB-E
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
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1SV234-TB-E 1SV234.pdf
1SV234-TB-E
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW CP
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1SV246-TL-E 1SV246.pdf
1SV246-TL-E
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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1SV263-TL-E en4510-d.pdf
1SV263-TL-E
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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1SV264-TL-E 1sv264-d.pdf
1SV264-TL-E
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.42 грн
Мінімальне замовлення: 3000
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1SV267-TB-E en4514-d.pdf
1SV267-TB-E
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
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2SA1179N6-CPA-TB-E en7198-d.pdf
2SA1179N6-CPA-TB-E
Виробник: onsemi
Description: TRANS PNP 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 180MHz
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SA1419S-TD-H 2SA1419%2C2SC3649.pdf
2SA1419S-TD-H
Виробник: onsemi
Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SA1419T-TD-H 2SA1419-D.PDF
2SA1419T-TD-H
Виробник: onsemi
Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SB815-6-TB-E en694-d.pdf
2SB815-6-TB-E
Виробник: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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2SB815-7-TB-E EN694-D.html
2SB815-7-TB-E
Виробник: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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2SC2812N6-CPA-TB-E en7198-d.pdf
2SC2812N6-CPA-TB-E
Виробник: onsemi
Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SC3649T-TD-H en2007-d.pdf
2SC3649T-TD-H
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SC4211-7-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 0.15A MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Supplier Device Package: MCP
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2SC5231A-9-TL-E 2SC5231A.pdf
Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Gull Wing
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 8.5dB @ 1GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
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2SC5277A-2-TL-E
2SC5277A-2-TL-E
Виробник: onsemi
Description: RF TRANS NPN 10V 8GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 10dB ~ 5.5dB @ 1.5GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
товару немає в наявності
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2SC5536A-TL-H ena1092-d.pdf
2SC5536A-TL-H
Виробник: onsemi
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Supplier Device Package: 3-SSFP
Part Status: Obsolete
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2SC5646A-TL-H ena1120-d.pdf
2SC5646A-TL-H
Виробник: onsemi
Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 10.5dB @ 2GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Frequency - Transition: 10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 3-SSFP
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2SD1618S-TD-E 2SD1618.pdf
2SD1618S-TD-E
Виробник: onsemi
Description: TRANS NPN 15V 0.7A SOT89-3
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2SD1624S-TD-E en2019-d.pdf
2SD1624S-TD-E
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+18.69 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SD1624T-TD-H en2019-d.pdf
2SD1624T-TD-H
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
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2SD1628F-TD-E en1781-d.pdf
2SD1628F-TD-E
Виробник: onsemi
Description: TRANS NPN 20V 5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
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2SK3666-4-TB-E 2SK3666.pdf
2SK3666-4-TB-E
Виробник: onsemi
Description: JFET N-CH 30V 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
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2SK3796-2-TL-E 2SK3796.pdf
2SK3796-2-TL-E
Виробник: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
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2SK3796-4-TL-E 2SK3796.pdf
2SK3796-4-TL-E
Виробник: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
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2SK545-11D-TB-E 2SK545-D.PDF
2SK545-11D-TB-E
Виробник: onsemi
Description: JFET N-CH 1MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 125 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 60 µA @ 10 V
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2SK932-23-TB-E 2sk932-d.pdf
2SK932-23-TB-E
Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.98 грн
6000+8.78 грн
9000+8.36 грн
15000+7.39 грн
21000+7.13 грн
30000+6.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SK932-24-TB-E EN2841-D.html
2SK932-24-TB-E
Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.77 грн
6000+12.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
30A02MH-TL-H 30A02MH-D.PDF
30A02MH-TL-H
Виробник: onsemi
Description: TRANS PNP 30V 700MA MCPH3
товару немає в наявності
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30C02MH-TL-E en7364-d.pdf
30C02MH-TL-E
Виробник: onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 540MHz
Supplier Device Package: 3-MCPH
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 600 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
50A02CH-TL-H 50a02ch-d.pdf
50A02CH-TL-H
Виробник: onsemi
Description: TRANS PNP 50V 500MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 690MHz
Supplier Device Package: 3-CPH
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
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50A02SS-TL-E en7491-d.pdf
50A02SS-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 0.4A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 690MHz
Supplier Device Package: 3-SSFP
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+5.19 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
55GN01MA-TL-E ena1114-d.pdf
55GN01MA-TL-E
Виробник: onsemi
Description: RF TRANS NPN 10V 5.5GHZ 3-MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB @ 1GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-MCP
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5LN01C-TB-H 5LN01C.pdf
5LN01C-TB-H
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3CP
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5LN01SS-TL-H 5LN01SS.pdf
5LN01SS-TL-H
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 3-SSFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
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5LP01C-TB-E 5LP01C.pdf
5LP01C-TB-E
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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5LP01C-TB-H 5LP01C.pdf
5LP01C-TB-H
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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CAT24C04C4ATR cat24c01-d.pdf
CAT24C04C4ATR
Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+8.60 грн
10000+8.08 грн
15000+7.96 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CAT24C08C4ATR cat24c01-d.pdf
CAT24C08C4ATR
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 735000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+8.09 грн
10000+7.60 грн
15000+7.49 грн
25000+6.90 грн
35000+6.82 грн
50000+6.73 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CAT24C16C4ATR cat24c01-d.pdf
CAT24C16C4ATR
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 185000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+8.96 грн
10000+8.42 грн
15000+8.30 грн
25000+7.64 грн
35000+7.55 грн
50000+7.45 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CAT24C32TSI-T3 CAT24C32.pdf
CAT24C32TSI-T3
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 1MHZ 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 5-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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CAT24C512HU5IGT3 cat24c512-d.pdf
CAT24C512HU5IGT3
Виробник: onsemi
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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