| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SB10-03A2-AT1 | onsemi |
Description: DIODE SCHOTTKY 30V 1A DO41Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB10-03A2-BT | onsemi |
Description: DIODE SCHOTTKY 30V 1A DO41Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB10-03A3-AT1 | onsemi |
Description: DIODE SCHOTTKY 30V 1A DO41Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB10-03A3-BT | onsemi |
Description: DIODE SCHOTTKY 30V 1A DO41Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB10-05A2-BT | onsemi |
Description: DIODE SCHOTTKY 50V 1A DO41Current - Reverse Leakage @ Vr: 1 mA @ 50 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB10-05A3-AT1 | onsemi |
Description: DIODE SCHOTTKY 50V 1A DO41Technology: Schottky Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 mA @ 50 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB11-04HP-TR-E | onsemi |
Description: DIODE SCHOTTKY 40V 1.1A SMDVoltage - Forward (Vf) (Max) @ If: 550 mV @ 1.1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMD Current - Reverse Leakage @ Vr: 1 mA @ 40 V Current - Average Rectified (Io): 1.1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB3003CH-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 3A 6CPHCurrent - Reverse Leakage @ Vr: 42 µA @ 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 6-CPH Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 90pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
SB80W10T-TL-H | onsemi |
Description: DIODE ARRAY SCHOTTKY 100V TPFA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SBH15-03-TR-E | onsemi |
Description: DIODE SCHOTTKY 1.5A 30V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SBM30-03-TR-E | onsemi |
Description: DIODE SCHOTTKY 3A 30V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TF408-2-TL-H | onsemi |
Description: JFET N-CH 10MA 3USFP Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V Part Status: Obsolete Supplier Device Package: 3-USFP Current Drain (Id) - Max: 10 mA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Power - Max: 30 mW Package / Case: 3-SMD, Flat Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TF408-3-TL-H | onsemi |
Description: JFET N-CH 10MA 3USFP FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Lead Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Power - Max: 30 mW Part Status: Obsolete Supplier Device Package: 3-USFP Current Drain (Id) - Max: 10 mA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
15C01C-TB-E | onsemi |
Description: TRANS NPN 15V 0.7A 3CPPower - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: 3-CP Frequency - Transition: 330MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 15GN01MA-TL-E | onsemi |
Description: RF TRANS NPN 8V 1.5GHZ 3-MCPSupplier Device Package: 3-MCP Frequency - Transition: 1.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V Voltage - Collector Emitter Breakdown (Max): 8V Current - Collector (Ic) (Max): 50mA Power - Max: 400mW Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
15GN03CA-TB-E | onsemi |
Description: RF TRANS NPN 10V 1.5GHZ 3CPPart Status: Active Supplier Device Package: 3-CP Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Frequency - Transition: 1.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 70mA Power - Max: 200mW Gain: 13dB @ 0.4GHz Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
15GN03MA-TL-E | onsemi |
Description: RF TRANS NPN 10V 1.5GHZ 3-MCPPart Status: Active Supplier Device Package: 3-MCP Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Frequency - Transition: 1.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 70mA Power - Max: 400mW Gain: 13dB @ 0.4GHz Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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1SV233-TB-E | onsemi |
Description: RF DIODE PIN 50V 150MW 3CP |
товару немає в наявності |
Мінімальне замовлення: 2061 шт В кошику од. на суму грн. | ||||||||||
|
1SV234-TB-E | onsemi |
Description: RF DIODE PIN 50V 150MW CP |
товару немає в наявності |
Мінімальне замовлення: 2061 шт В кошику од. на суму грн. | ||||||||||
|
1SV246-TL-E | onsemi |
Description: RF DIODE PIN 50V 100MWPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz Resistance @ If, F: 5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Part Status: Obsolete Current - Max: 50 mA Power Dissipation (Max): 100 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
1SV263-TL-E | onsemi |
Description: RF DIODE PIN 50V 100MW 3MCPOperating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Power Dissipation (Max): 100 mW Current - Max: 50 mA Supplier Device Package: 3-MCP Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
1SV264-TL-E | onsemi |
Description: RF DIODE PIN 50V 100MW 3MCPPower Dissipation (Max): 100 mW Current - Max: 50 mA Supplier Device Package: 3-MCP Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - 1 Pair Series Connection Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SV267-TB-E | onsemi |
Description: RF DIODE PIN 50V 150MW 3CPPackaging: Tape & Reel (TR) Supplier Device Package: 3-CP Voltage - Peak Reverse (Max): 50V Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - 1 Pair Series Connection Package / Case: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Max): 150 mW Current - Max: 50 mA Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
2SA1179N6-CPA-TB-E | onsemi |
Description: TRANS PNP 50V 0.15APackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 180MHz Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
2SA1419S-TD-H | onsemi |
Description: TRANS PNP 160V 1.5A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
2SA1419T-TD-H | onsemi |
Description: TRANS PNP 160V 1.5A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
2SB815-6-TB-E | onsemi |
Description: TRANS PNP 15V 0.7A 3-CPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-CP Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SB815-7-TB-E | onsemi |
Description: TRANS PNP 15V 0.7A 3-CPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-CP Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SC2812N6-CPA-TB-E | onsemi |
Description: TRANS NPN 50V 0.15A 3-CPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: 3-CP Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SC3649T-TD-H | onsemi |
Description: TRANS NPN 160V 1.5A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 2SC4211-7-TL-E | onsemi |
Description: TRANS NPN 50V 0.15A MCP Supplier Device Package: MCP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| 2SC5231A-9-TL-E | onsemi |
Description: RF TRANS NPN 10V 7GHZ SMCPMounting Type: Surface Mount Package / Case: 3-SMD, Gull Wing Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: SMCP Noise Figure (dB Typ @ f): 1dB @ 1GHz Frequency - Transition: 7GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 70mA Power - Max: 100mW Gain: 12dB ~ 8.5dB @ 1GHz Operating Temperature: 150°C (TJ) Transistor Type: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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2SC5277A-2-TL-E | onsemi |
Description: RF TRANS NPN 10V 8GHZ SMCP Part Status: Obsolete Supplier Device Package: SMCP Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz Frequency - Transition: 8GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 30mA Power - Max: 100mW Gain: 10dB ~ 5.5dB @ 1.5GHz Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SC5536A-TL-H | onsemi |
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFPPart Status: Obsolete Supplier Device Package: 3-SSFP Noise Figure (dB Typ @ f): 1.8dB @ 150MHz Frequency - Transition: 1.7GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 50mA Power - Max: 100mW Gain: 16dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-81 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
2SC5646A-TL-H | onsemi |
Description: RF TRANS NPN 4V 12.5GHZ 3SSFPSupplier Device Package: 3-SSFP Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Frequency - Transition: 10GHz ~ 12.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Voltage - Collector Emitter Breakdown (Max): 4V Current - Collector (Ic) (Max): 30mA Power - Max: 100mW Gain: 9.5dB ~ 10.5dB @ 2GHz Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-81 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SD1618S-TD-E | onsemi |
Description: TRANS NPN 15V 0.7A SOT89-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SD1624S-TD-E | onsemi |
Description: TRANS NPN 50V 3A PCPPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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2SD1624T-TD-H | onsemi |
Description: TRANS NPN 50V 3A PCPPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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2SD1628F-TD-E | onsemi |
Description: TRANS NPN 20V 5A PCPSupplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SK3666-4-TB-E | onsemi |
Description: JFET N-CH 30V 10MA SMCPCurrent - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Resistance - RDS(On): 200 Ohms Power - Max: 200 mW Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: SMCP Current Drain (Id) - Max: 10 mA Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SK3796-2-TL-E | onsemi |
Description: JFET N-CH 10MA SMCPPart Status: Obsolete Supplier Device Package: SMCP Current Drain (Id) - Max: 10 mA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Resistance - RDS(On): 200 Ohms Power - Max: 100 mW Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SK3796-4-TL-E | onsemi |
Description: JFET N-CH 10MA SMCPCurrent - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Resistance - RDS(On): 200 Ohms Power - Max: 100 mW Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: SMCP Current Drain (Id) - Max: 10 mA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SK545-11D-TB-E | onsemi |
Description: JFET N-CH 1MA SMCPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V Current Drain (Id) - Max: 1 mA Supplier Device Package: SMCP Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 125 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 60 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SK932-23-TB-E | onsemi |
Description: JFET N-CH 50MA SMCPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Current Drain (Id) - Max: 50 mA Supplier Device Package: SMCP Part Status: Active Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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2SK932-24-TB-E | onsemi |
Description: JFET N-CH 50MA SMCPCurrent - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Power - Max: 200 mW Drain to Source Voltage (Vdss): 15 V Part Status: Active Supplier Device Package: SMCP Current Drain (Id) - Max: 50 mA FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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30A02MH-TL-H | onsemi |
Description: TRANS PNP 30V 700MA MCPH3 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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30C02MH-TL-E | onsemi |
Description: TRANS NPN 30V 0.7A 3-MCPHPower - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 700 mA Part Status: Active Supplier Device Package: 3-MCPH Frequency - Transition: 540MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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50A02CH-TL-H | onsemi |
Description: TRANS PNP 50V 500MA 3CPHDC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 700 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: 3-CPH Frequency - Transition: 690MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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50A02SS-TL-E | onsemi |
Description: TRANS PNP 50V 0.4A 3SSFPPower - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 400 mA Supplier Device Package: 3-SSFP Frequency - Transition: 690MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-81 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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55GN01MA-TL-E | onsemi |
Description: RF TRANS NPN 10V 5.5GHZ 3-MCPTransistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Supplier Device Package: 3-MCP Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Frequency - Transition: 4.5GHz ~ 5.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 70mA Power - Max: 400mW Gain: 10dB @ 1GHz Operating Temperature: 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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5LN01C-TB-H | onsemi |
Description: MOSFET N-CH 50V 100MA 3CP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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5LN01SS-TL-H | onsemi |
Description: MOSFET N-CH 50V 100MA 3SSFPRds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-81 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Obsolete Supplier Device Package: 3-SSFP Power Dissipation (Max): 150mW (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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5LP01C-TB-E | onsemi |
Description: MOSFET P-CH 50V 70MA 3CPInput Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: SC-59-3/CP3 Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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5LP01C-TB-H | onsemi |
Description: MOSFET P-CH 50V 70MA 3CPInput Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: SC-59-3/CP3 Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CAT24C04C4ATR | onsemi |
Description: IC EEPROM 4KBIT I2C 4WLCSPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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CAT24C08C4ATR | onsemi |
Description: IC EEPROM 8KBIT I2C 4WLCSPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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CAT24C16C4ATR | onsemi |
Description: IC EEPROM 16KBIT I2C 4WLCSPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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CAT24C32TSI-T3 | onsemi |
Description: IC EEPROM 32KBIT I2C 1MHZ 5TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 5-TSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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CAT24C512HU5IGT3 | onsemi |
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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CAT24M01YI-GT3 | onsemi |
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOPDigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| SB10-03A2-AT1 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SB10-03A2-BT |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SB10-03A3-AT1 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SB10-03A3-BT |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SB10-05A2-BT |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SB10-05A3-AT1 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Description: DIODE SCHOTTKY 50V 1A DO41
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
товару немає в наявності
В кошику
од. на суму грн.
| SB11-04HP-TR-E |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1.1A SMD
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Current - Average Rectified (Io): 1.1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1.1A SMD
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Current - Average Rectified (Io): 1.1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SB3003CH-TL-E |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 3A 6CPH
Current - Reverse Leakage @ Vr: 42 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 6-CPH
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 3A 6CPH
Current - Reverse Leakage @ Vr: 42 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 6-CPH
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SB80W10T-TL-H |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 100V TPFA
Description: DIODE ARRAY SCHOTTKY 100V TPFA
товару немає в наявності
В кошику
од. на суму грн.
| TF408-2-TL-H |
Виробник: onsemi
Description: JFET N-CH 10MA 3USFP
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
Part Status: Obsolete
Supplier Device Package: 3-USFP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Power - Max: 30 mW
Package / Case: 3-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: JFET N-CH 10MA 3USFP
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
Part Status: Obsolete
Supplier Device Package: 3-USFP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Power - Max: 30 mW
Package / Case: 3-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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| TF408-3-TL-H |
Виробник: onsemi
Description: JFET N-CH 10MA 3USFP
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Power - Max: 30 mW
Part Status: Obsolete
Supplier Device Package: 3-USFP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Description: JFET N-CH 10MA 3USFP
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Power - Max: 30 mW
Part Status: Obsolete
Supplier Device Package: 3-USFP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
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| 15C01C-TB-E |
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Виробник: onsemi
Description: TRANS NPN 15V 0.7A 3CP
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: 3-CP
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 15V 0.7A 3CP
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: 3-CP
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| 15GN01MA-TL-E |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 8V 1.5GHZ 3-MCP
Supplier Device Package: 3-MCP
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 8V
Current - Collector (Ic) (Max): 50mA
Power - Max: 400mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 8V 1.5GHZ 3-MCP
Supplier Device Package: 3-MCP
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 8V
Current - Collector (Ic) (Max): 50mA
Power - Max: 400mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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| 15GN03CA-TB-E |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3CP
Part Status: Active
Supplier Device Package: 3-CP
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 200mW
Gain: 13dB @ 0.4GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 10V 1.5GHZ 3CP
Part Status: Active
Supplier Device Package: 3-CP
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 200mW
Gain: 13dB @ 0.4GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| 15GN03MA-TL-E |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Part Status: Active
Supplier Device Package: 3-MCP
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 400mW
Gain: 13dB @ 0.4GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Part Status: Active
Supplier Device Package: 3-MCP
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 400mW
Gain: 13dB @ 0.4GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.81 грн |
| 6000+ | 6.84 грн |
| 9000+ | 6.50 грн |
| 15000+ | 5.73 грн |
| 21000+ | 5.51 грн |
| 1SV233-TB-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Description: RF DIODE PIN 50V 150MW 3CP
товару немає в наявності
Мінімальне замовлення: 2061 шт
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| 1SV234-TB-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW CP
Description: RF DIODE PIN 50V 150MW CP
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Мінімальне замовлення: 2061 шт
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| 1SV246-TL-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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| 1SV263-TL-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 100 mW
Current - Max: 50 mA
Supplier Device Package: 3-MCP
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Description: RF DIODE PIN 50V 100MW 3MCP
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 100 mW
Current - Max: 50 mA
Supplier Device Package: 3-MCP
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
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| 1SV264-TL-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Power Dissipation (Max): 100 mW
Current - Max: 50 mA
Supplier Device Package: 3-MCP
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: RF DIODE PIN 50V 100MW 3MCP
Power Dissipation (Max): 100 mW
Current - Max: 50 mA
Supplier Device Package: 3-MCP
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.37 грн |
| 1SV267-TB-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Tape & Reel (TR)
Supplier Device Package: 3-CP
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 150 mW
Current - Max: 50 mA
Part Status: Obsolete
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Tape & Reel (TR)
Supplier Device Package: 3-CP
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 150 mW
Current - Max: 50 mA
Part Status: Obsolete
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| 2SA1179N6-CPA-TB-E |
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Виробник: onsemi
Description: TRANS PNP 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 180MHz
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 180MHz
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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| 2SA1419S-TD-H |
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Виробник: onsemi
Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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| 2SA1419T-TD-H |
![]() |
Виробник: onsemi
Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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| 2SB815-6-TB-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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| 2SB815-7-TB-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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| 2SC2812N6-CPA-TB-E |
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Виробник: onsemi
Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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| 2SC3649T-TD-H |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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| 2SC4211-7-TL-E |
Виробник: onsemi
Description: TRANS NPN 50V 0.15A MCP
Supplier Device Package: MCP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 0.15A MCP
Supplier Device Package: MCP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 2SC5231A-9-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ SMCP
Mounting Type: Surface Mount
Package / Case: 3-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SMCP
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Frequency - Transition: 7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 100mW
Gain: 12dB ~ 8.5dB @ 1GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Description: RF TRANS NPN 10V 7GHZ SMCP
Mounting Type: Surface Mount
Package / Case: 3-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SMCP
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Frequency - Transition: 7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 100mW
Gain: 12dB ~ 8.5dB @ 1GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
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| 2SC5277A-2-TL-E |
Виробник: onsemi
Description: RF TRANS NPN 10V 8GHZ SMCP
Part Status: Obsolete
Supplier Device Package: SMCP
Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 30mA
Power - Max: 100mW
Gain: 10dB ~ 5.5dB @ 1.5GHz
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 10V 8GHZ SMCP
Part Status: Obsolete
Supplier Device Package: SMCP
Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 30mA
Power - Max: 100mW
Gain: 10dB ~ 5.5dB @ 1.5GHz
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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| 2SC5536A-TL-H |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Part Status: Obsolete
Supplier Device Package: 3-SSFP
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Frequency - Transition: 1.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 100mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Part Status: Obsolete
Supplier Device Package: 3-SSFP
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Frequency - Transition: 1.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 100mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| 2SC5646A-TL-H |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Supplier Device Package: 3-SSFP
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Frequency - Transition: 10GHz ~ 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 30mA
Power - Max: 100mW
Gain: 9.5dB ~ 10.5dB @ 2GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Supplier Device Package: 3-SSFP
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Frequency - Transition: 10GHz ~ 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 30mA
Power - Max: 100mW
Gain: 9.5dB ~ 10.5dB @ 2GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
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В кошику
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| 2SD1618S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 15V 0.7A SOT89-3
Description: TRANS NPN 15V 0.7A SOT89-3
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1624S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 18.78 грн |
| 2SD1624T-TD-H |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2SD1628F-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 20V 5A PCP
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Description: TRANS NPN 20V 5A PCP
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
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В кошику
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| 2SK3666-4-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 30V 10MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Resistance - RDS(On): 200 Ohms
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 10 mA
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: JFET N-CH 30V 10MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Resistance - RDS(On): 200 Ohms
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 10 mA
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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В кошику
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| 2SK3796-2-TL-E |
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Виробник: onsemi
Description: JFET N-CH 10MA SMCP
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Resistance - RDS(On): 200 Ohms
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 30 V
Description: JFET N-CH 10MA SMCP
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Resistance - RDS(On): 200 Ohms
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 30 V
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В кошику
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| 2SK3796-4-TL-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 10MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Resistance - RDS(On): 200 Ohms
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: JFET N-CH 10MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Resistance - RDS(On): 200 Ohms
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 10 mA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| 2SK545-11D-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 1MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 125 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 60 µA @ 10 V
Description: JFET N-CH 1MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 125 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 60 µA @ 10 V
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| 2SK932-23-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Description: JFET N-CH 50MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.03 грн |
| 6000+ | 8.82 грн |
| 2SK932-24-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Part Status: Active
Supplier Device Package: SMCP
Current Drain (Id) - Max: 50 mA
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: JFET N-CH 50MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Part Status: Active
Supplier Device Package: SMCP
Current Drain (Id) - Max: 50 mA
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.70 грн |
| 6000+ | 12.11 грн |
| 30A02MH-TL-H |
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Виробник: onsemi
Description: TRANS PNP 30V 700MA MCPH3
Description: TRANS PNP 30V 700MA MCPH3
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| 30C02MH-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.65 грн |
| 50A02CH-TL-H |
![]() |
Виробник: onsemi
Description: TRANS PNP 50V 500MA 3CPH
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: 3-CPH
Frequency - Transition: 690MHz
Description: TRANS PNP 50V 500MA 3CPH
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: 3-CPH
Frequency - Transition: 690MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 50A02SS-TL-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 50V 0.4A 3SSFP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 400 mA
Supplier Device Package: 3-SSFP
Frequency - Transition: 690MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
Description: TRANS PNP 50V 0.4A 3SSFP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 400 mA
Supplier Device Package: 3-SSFP
Frequency - Transition: 690MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 5.16 грн |
| 55GN01MA-TL-E |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 10V 5.5GHZ 3-MCP
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: 3-MCP
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Frequency - Transition: 4.5GHz ~ 5.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 400mW
Gain: 10dB @ 1GHz
Operating Temperature: 150°C (TJ)
Description: RF TRANS NPN 10V 5.5GHZ 3-MCP
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: 3-MCP
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Frequency - Transition: 4.5GHz ~ 5.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 400mW
Gain: 10dB @ 1GHz
Operating Temperature: 150°C (TJ)
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| 5LN01C-TB-H |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3CP
Description: MOSFET N-CH 50V 100MA 3CP
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| 5LN01SS-TL-H |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3SSFP
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: 3-SSFP
Power Dissipation (Max): 150mW (Ta)
Description: MOSFET N-CH 50V 100MA 3SSFP
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: 3-SSFP
Power Dissipation (Max): 150mW (Ta)
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| 5LP01C-TB-E |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 50V 70MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| 5LP01C-TB-H |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 50V 70MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| CAT24C04C4ATR |
![]() |
Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
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| CAT24C08C4ATR |
![]() |
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 7.99 грн |
| 10000+ | 7.51 грн |
| CAT24C16C4ATR |
![]() |
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 9.01 грн |
| 10000+ | 8.46 грн |
| CAT24C32TSI-T3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 1MHZ 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 5-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 1MHZ 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 5-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT24C512HU5IGT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT24M01YI-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 53.89 грн |
















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