| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FDC8878 | onsemi |
 Description: MOSFET N-CH 30V 8A/8A SUPERSOT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB86102LZ | onsemi |
Description: MOSFET N-CH 100V 8.3A/30A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V |
на замовлення 395 шт: термін постачання 21-31 дні (днів) |
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NC7S14L6X | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAK Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: 6-MicroPak Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FJT44TF | onsemi |
Description: TRANS NPN 400V 0.3A SOT-223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Supplier Device Package: SOT-223-4 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB14AN06LA0-F085 | onsemi |
Description: MOSFET N-CH 60V 67A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX540MTCX | onsemi |
Description: IC BUFFER INVERT 3.6V 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 12095 шт: термін постачання 21-31 дні (днів) |
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FXLA101L6X | onsemi |
Description: IC TRANSLATOR BIDIR 6MICROPAK Features: Auto-Direction Sensing, Power-Off Protection Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 6-MicroPak Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Part Status: Active Number of Circuits: 1 |
на замовлення 38753 шт: термін постачання 21-31 дні (днів) |
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NC7WZ14FHX | onsemi |
Description: IC INVERT 2CH 2-INP 6MICROPAK2 Current - Quiescent (Max): 1 µA Number of Circuits: 2 Part Status: Obsolete Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF Input Logic Level - Low: 0.2V ~ 1.2V Input Logic Level - High: 1.4V ~ 3.6V Supplier Device Package: 6-MicroPak2™ Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 6-UFDFN Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 200177 шт: термін постачання 21-31 дні (днів) |
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FDMA8878 | onsemi |
Description: MOSFET N-CH 30V 9A/10A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
на замовлення 20544 шт: термін постачання 21-31 дні (днів) |
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NC7WZ07FHX | onsemi |
Description: IC BUF NON-INVERT 5.5V 6MICROPK2 Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-MicroPak2™ |
на замовлення 6300 шт: термін постачання 21-31 дні (днів) |
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FDMS7678 | onsemi |
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FDMC86116LZ | onsemi |
Description: MOSFET N-CH 100V 3.3A/7.5A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc) Rds On (Max) @ Id, Vgs: 103mOhm @ 3.3A, 10V Power Dissipation (Max): 2.3W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V |
на замовлення 5228 шт: термін постачання 21-31 дні (днів) |
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FDD5N60NZTM | onsemi |
Description: MOSFET N-CH 600V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
на замовлення 23333 шт: термін постачання 21-31 дні (днів) |
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FDD7N25LZTM | onsemi |
Description: MOSFET N-CH 250V 6.2A DPAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 8182 шт: термін постачання 21-31 дні (днів) |
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FDT3N40TF | onsemi |
Description: MOSFET N-CH 400V 2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FOD8321R2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 300ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 16V ~ 30V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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FOD8321R2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP |
на замовлення 179 шт: термін постачання 21-31 дні (днів) |
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FDMS8622 | onsemi |
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V |
на замовлення 9793 шт: термін постачання 21-31 дні (днів) |
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FDD770N15A | onsemi |
Description: MOSFET N CH 150V 18A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V |
на замовлення 3986 шт: термін постачання 21-31 дні (днів) |
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FAN3850AUC19X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Features: ADC, Microphone Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.64V ~ 3.63V Supplier Device Package: 6-WLCSP (1.26x0.86) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FT7522L6X | onsemi |
Description: IC SUPERVISOR 6MICROPAK Supplier Device Package: 6-MicroPak Reset Timeout: 320ms Minimum Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Reset Timer Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
на замовлення 29229 шт: термін постачання 21-31 дні (днів) |
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FL7930BMX | onsemi |
Description: IC BALLAST CNTRL 350KHZ 8SOP Current - Supply: 2.5 mA Dimming: No Supplier Device Package: 8-SOIC Voltage - Supply: 13V ~ 20V Operating Temperature: -40°C ~ 125°C Type: Ballast Controller Frequency: 250kHz ~ 350kHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FL7930CMX | onsemi |
Description: IC BALLAST CNTRL 350KHZ 8SOP Current - Supply: 2.5 mA Part Status: Obsolete Dimming: No Supplier Device Package: 8-SOIC Voltage - Supply: 13V ~ 20V Operating Temperature: -40°C ~ 125°C Type: Ballast Controller Frequency: 250kHz ~ 350kHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDN86246 | onsemi |
Description: MOSFET N-CH 150V 1.6A SUPERSOT3 Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 11729 шт: термін постачання 21-31 дні (днів) |
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FDT86113LZ | onsemi |
Description: MOSFET N-CH 100V 3.3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
на замовлення 25248 шт: термін постачання 21-31 дні (днів) |
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H11N2SR2M | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6SMD Current - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 330ns, 330ns Rise / Fall Time (Typ): 7.5ns, 12ns Supplier Device Package: 6-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 30mA Voltage - Isolation: 4170Vrms Input Type: DC Data Rate: 5MHz Voltage - Forward (Vf) (Typ): 1.4V Voltage - Supply: 4V ~ 15V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Open Collector Package / Case: 6-SMD, Gull Wing Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC8015L | onsemi |
Description: MOSFET N-CH 40V 7A/18A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 3765 шт: термін постачання 21-31 дні (днів) |
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FPF1048BUCX | onsemi |
Description: IC PWR SWITCH LOAD MGMT 6WLCSP Fault Protection: Reverse Current Supplier Device Package: 6-WLCSP (0.96x1.66) Current - Output (Max): 3A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.5V ~ 5.5V Rds On (Typ): 21mOhm Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLCSP Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
на замовлення 28569 шт: термін постачання 21-31 дні (днів) |
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FDME1023PZT | onsemi |
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
на замовлення 358483 шт: термін постачання 21-31 дні (днів) |
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FDME1024NZT | onsemi |
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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FDC86244 | onsemi |
Description: MOSFET N-CH 150V 2.3A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
на замовлення 32793 шт: термін постачання 21-31 дні (днів) |
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FDZ661PZ | onsemi |
Description: MOSFET P-CH 20V 2.6A 4WLCSP Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 4-WLCSP (0.8x0.8) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V |
на замовлення 7250 шт: термін постачання 21-31 дні (днів) |
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FDS89161LZ | onsemi |
Description: MOSFET 2N-CH 100V 2.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 1274 шт: термін постачання 21-31 дні (днів) |
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FAN3278TMX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 8V ~ 27V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 21ns, 8ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.25V Current - Peak Output (Source, Sink): 1A, 1.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 24496 шт: термін постачання 21-31 дні (днів) |
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FDMS4435BZ | onsemi |
Description: MOSFET P-CH 30V 9A/18A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V |
на замовлення 6989 шт: термін постачання 21-31 дні (днів) |
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FDD18N20LZ | onsemi |
Description: MOSFET N-CH 200V 16A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V |
на замовлення 2125 шт: термін постачання 21-31 дні (днів) |
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FXMAR2102UMX | onsemi |
Description: IC XLTR VL BIDIR 8-UMLP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 50MHz Supplier Device Package: 8-UMLP (1.2x1.4) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 28737 шт: термін постачання 21-31 дні (днів) |
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FDD390N15ALZ | onsemi |
Description: MOSFET N-CH 150V 26A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1250 шт: термін постачання 21-31 дні (днів) |
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FAN4146ESX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOT Operating Temperature: -25°C ~ 80°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Supplier Device Package: SuperSOT™-6 Current - Supply: 400µA Applications: Ground Fault Protection |
на замовлення 3190 шт: термін постачання 21-31 дні (днів) |
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FAN4147SX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOT Supplier Device Package: SuperSOT™-6 Current - Supply: 400µA Applications: Ground Fault Protection Operating Temperature: -35°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FDD5N50NZTM | onsemi |
Description: MOSFET N-CH 500V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
на замовлення 4651 шт: термін постачання 21-31 дні (днів) |
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FAN6982MY | onsemi |
Description: IC PFC CTRLR CCM 75KHZ 14SOIC Current - Startup: 30 µA Part Status: Obsolete Supplier Device Package: 14-SOIC Mode: Continuous Conduction (CCM) Frequency - Switching: 50kHz ~ 75kHz Voltage - Supply: 11V ~ 22V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7389MX1 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Part Status: Not For New Designs Current - Peak Output (Source, Sink): 350mA, 650mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 6 Driven Configuration: Half-Bridge Channel Type: 3-Phase Rise / Fall Time (Typ): 50ns, 30ns Supplier Device Package: 28-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
на замовлення 968 шт: термін постачання 21-31 дні (днів) |
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FSA2466UMX | onsemi |
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP Packaging: Cut Tape (CT) Package / Case: 16-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.6Ohm (Typ) -3db Bandwidth: 240MHz Supplier Device Package: 16-UMLP (1.8x2.6) Voltage - Supply, Single (V+): 1.65V ~ 4.45V Charge Injection: 8pC Crosstalk: -90dB @ 100kHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 40mOhm Switch Time (Ton, Toff) (Max): 50ns, 32ns Channel Capacitance (CS(off), CD(off)): 6pF Current - Leakage (IS(off)) (Max): 10nA Part Status: Last Time Buy Number of Circuits: 2 |
на замовлення 2476 шт: термін постачання 21-31 дні (днів) |
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FDMS7620S | onsemi |
Description: MOSFET 2N-CH 30V 10.1A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 Part Status: Active |
на замовлення 37648 шт: термін постачання 21-31 дні (днів) |
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FDMC86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
на замовлення 5289 шт: термін постачання 21-31 дні (днів) |
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FDS89141 | onsemi |
Description: MOSFET 2N-CH 100V 3.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 1983 шт: термін постачання 21-31 дні (днів) |
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FQS4903TF | onsemi |
Description: MOSFET 2N-CH 500V 0.37A 8SOP Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 370mA Drain to Source Voltage (Vdss): 500V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
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FDMS8020 | onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDT86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V |
на замовлення 461 шт: термін постачання 21-31 дні (днів) |
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FDT86246 | onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
на замовлення 4606 шт: термін постачання 21-31 дні (днів) |
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EGP10G | onsemi |
Description: DIODE STANDARD 400V 1A DO41 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
на замовлення 4032 шт: термін постачання 21-31 дні (днів) |
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FDMS7660AS | onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V |
на замовлення 3554 шт: термін постачання 21-31 дні (днів) |
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FSUSB74MPX | onsemi |
Description: IC USB MUX/SWITCH 16MLP Number of Channels: 1 Part Status: Active Multiplexer/Demultiplexer Circuit: 4:1 Voltage - Supply, Single (V+): 2.5V ~ 4.4V Supplier Device Package: 16-MLP (3x3) On-State Resistance (Max): 9Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Exposed Pad Features: Break-Before-Make, USB 2.0 Packaging: Cut Tape (CT) |
на замовлення 16357 шт: термін постачання 21-31 дні (днів) |
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FDMS86105 | onsemi |
Description: MOSFET N-CH 100V 6A/26A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMC8030 | onsemi |
Description: MOSFET 2N-CH 40V 12A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V Current - Continuous Drain (Id) @ 25°C: 12A Drain to Source Voltage (Vdss): 40V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 8259 шт: термін постачання 21-31 дні (днів) |
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FDMS8018 | onsemi |
Description: MOSFET N-CH 30V 30A/120A 8PQFN Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 83W (Tc) |
на замовлення 20164 шт: термін постачання 21-31 дні (днів) |
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FDMS86310 | onsemi |
Description: MOSFET N-CH 80V 17A/50A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V |
на замовлення 8175 шт: термін постачання 21-31 дні (днів) |
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FAN7081MX-GF085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOIC DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 250mA, 500mA Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 15ns, 10ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 2473 шт: термін постачання 21-31 дні (днів) |
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FDMS86102LZ | onsemi |
Description: MOSFET N-CH 100V 7A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V |
на замовлення 31360 шт: термін постачання 21-31 дні (днів) |
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| FDC8878 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8A/8A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: MOSFET N-CH 30V 8A/8A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
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В кошику
од. на суму грн.
| FDB86102LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.53 грн |
| 10+ | 116.48 грн |
| 100+ | 79.83 грн |
| NC7S14L6X |
|
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
В кошику
од. на суму грн.
| FJT44TF |
|
Виробник: onsemi
Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| FDB14AN06LA0-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 67A TO263AB
Description: MOSFET N-CH 60V 67A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| 74LCX540MTCX |
|
Виробник: onsemi
Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 12095 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.42 грн |
| 10+ | 58.43 грн |
| 25+ | 55.43 грн |
| 100+ | 39.94 грн |
| 250+ | 35.30 грн |
| 500+ | 33.44 грн |
| 1000+ | 25.58 грн |
| FXLA101L6X |
|
Виробник: onsemi
Description: IC TRANSLATOR BIDIR 6MICROPAK
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 6-MicroPak
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLATOR BIDIR 6MICROPAK
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 6-MicroPak
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
на замовлення 38753 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 10+ | 40.67 грн |
| 25+ | 38.18 грн |
| 100+ | 29.24 грн |
| 250+ | 27.16 грн |
| 500+ | 23.11 грн |
| 1000+ | 18.19 грн |
| 2500+ | 16.48 грн |
| NC7WZ14FHX |
|
Виробник: onsemi
Description: IC INVERT 2CH 2-INP 6MICROPAK2
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: 6-MicroPak2™
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT 2CH 2-INP 6MICROPAK2
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: 6-MicroPak2™
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 200177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.79 грн |
| 10+ | 32.09 грн |
| 25+ | 26.48 грн |
| 100+ | 18.88 грн |
| 250+ | 15.94 грн |
| 500+ | 14.13 грн |
| 1000+ | 12.41 грн |
| 2500+ | 10.80 грн |
| FDMA8878 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
на замовлення 20544 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.63 грн |
| 10+ | 98.50 грн |
| 100+ | 66.89 грн |
| 500+ | 50.07 грн |
| 1000+ | 45.98 грн |
| NC7WZ07FHX |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak2™
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak2™
на замовлення 6300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 29+ | 10.37 грн |
| 33+ | 9.19 грн |
| 100+ | 7.37 грн |
| 250+ | 6.78 грн |
| 500+ | 6.42 грн |
| 1000+ | 6.02 грн |
| 2500+ | 5.83 грн |
| FDMS7678 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.79 грн |
| 10+ | 52.53 грн |
| 100+ | 34.74 грн |
| 500+ | 25.42 грн |
| 1000+ | 23.11 грн |
| FDMC86116LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 3.3A/7.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V
Description: MOSFET N-CH 100V 3.3A/7.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V
на замовлення 5228 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.99 грн |
| 10+ | 75.89 грн |
| 100+ | 50.82 грн |
| 500+ | 37.61 грн |
| 1000+ | 34.37 грн |
| FDD5N60NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 23333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.06 грн |
| 10+ | 82.08 грн |
| 100+ | 55.21 грн |
| 500+ | 41.00 грн |
| 1000+ | 37.52 грн |
| FDD7N25LZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 6.2A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 250V 6.2A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 8182 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.34 грн |
| 10+ | 53.58 грн |
| 100+ | 35.42 грн |
| 500+ | 25.91 грн |
| 1000+ | 23.56 грн |
| FDT3N40TF |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: MOSFET N-CH 400V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
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В кошику
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| FOD8321R2 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 542.44 грн |
| FOD8321R2V |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.22 грн |
| 10+ | 327.88 грн |
| 100+ | 268.58 грн |
| FDMS8622 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
на замовлення 9793 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.16 грн |
| 10+ | 83.72 грн |
| 100+ | 56.38 грн |
| 500+ | 41.92 грн |
| 1000+ | 38.38 грн |
| FDD770N15A |
|
Виробник: onsemi
Description: MOSFET N CH 150V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
Description: MOSFET N CH 150V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
на замовлення 3986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.21 грн |
| 10+ | 75.14 грн |
| 100+ | 50.41 грн |
| 500+ | 37.34 грн |
| 1000+ | 34.13 грн |
| FAN3850AUC19X |
Виробник: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Features: ADC, Microphone
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Description: IC AMP CLASS AB MONO 6WLCSP
Features: ADC, Microphone
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
товару немає в наявності
В кошику
од. на суму грн.
| FT7522L6X |
|
Виробник: onsemi
Description: IC SUPERVISOR 6MICROPAK
Supplier Device Package: 6-MicroPak
Reset Timeout: 320ms Minimum
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 6MICROPAK
Supplier Device Package: 6-MicroPak
Reset Timeout: 320ms Minimum
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 29229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.72 грн |
| 10+ | 38.06 грн |
| 25+ | 35.49 грн |
| 100+ | 26.65 грн |
| 250+ | 24.75 грн |
| 500+ | 20.94 грн |
| 1000+ | 15.91 грн |
| 2500+ | 14.51 грн |
| FL7930BMX |
|
Виробник: onsemi
Description: IC BALLAST CNTRL 350KHZ 8SOP
Current - Supply: 2.5 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 250kHz ~ 350kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC BALLAST CNTRL 350KHZ 8SOP
Current - Supply: 2.5 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 250kHz ~ 350kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| FL7930CMX |
|
Виробник: onsemi
Description: IC BALLAST CNTRL 350KHZ 8SOP
Current - Supply: 2.5 mA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 250kHz ~ 350kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC BALLAST CNTRL 350KHZ 8SOP
Current - Supply: 2.5 mA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 250kHz ~ 350kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| FDN86246 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 11729 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.31 грн |
| 10+ | 77.38 грн |
| 100+ | 52.13 грн |
| 500+ | 38.76 грн |
| 1000+ | 35.87 грн |
| FDT86113LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 3.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
на замовлення 25248 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.71 грн |
| 10+ | 65.59 грн |
| 100+ | 43.68 грн |
| 500+ | 32.17 грн |
| 1000+ | 29.33 грн |
| 2000+ | 26.94 грн |
| H11N2SR2M |
|
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
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од. на суму грн.
| FDMC8015L |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 7A/18A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 7A/18A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 3765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.84 грн |
| 10+ | 57.46 грн |
| 100+ | 44.72 грн |
| 500+ | 35.57 грн |
| 1000+ | 28.98 грн |
| FPF1048BUCX |
|
Виробник: onsemi
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Fault Protection: Reverse Current
Supplier Device Package: 6-WLCSP (0.96x1.66)
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Rds On (Typ): 21mOhm
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Fault Protection: Reverse Current
Supplier Device Package: 6-WLCSP (0.96x1.66)
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Rds On (Typ): 21mOhm
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
на замовлення 28569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.69 грн |
| 10+ | 49.47 грн |
| 25+ | 41.16 грн |
| 100+ | 29.89 грн |
| 250+ | 25.59 грн |
| 500+ | 22.94 грн |
| 1000+ | 20.38 грн |
| FDME1023PZT |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
на замовлення 358483 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.87 грн |
| 10+ | 56.86 грн |
| 100+ | 44.31 грн |
| 500+ | 34.35 грн |
| 1000+ | 27.12 грн |
| 2000+ | 25.31 грн |
| FDME1024NZT |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
на замовлення 380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.17 грн |
| 10+ | 45.44 грн |
| 100+ | 29.73 грн |
| FDC86244 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Description: MOSFET N-CH 150V 2.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
на замовлення 32793 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.74 грн |
| 10+ | 61.11 грн |
| 100+ | 40.50 грн |
| 500+ | 29.70 грн |
| 1000+ | 27.02 грн |
| FDZ661PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.6A 4WLCSP
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 4-WLCSP (0.8x0.8)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Description: MOSFET P-CH 20V 2.6A 4WLCSP
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 4-WLCSP (0.8x0.8)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
на замовлення 7250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.34 грн |
| 10+ | 53.65 грн |
| 100+ | 35.33 грн |
| 500+ | 25.75 грн |
| 1000+ | 23.37 грн |
| 2000+ | 21.36 грн |
| FDS89161LZ |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 1274 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 93.35 грн |
| 100+ | 63.24 грн |
| 500+ | 47.27 грн |
| 1000+ | 43.39 грн |
| FAN3278TMX |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 27V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 8ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.25V
Current - Peak Output (Source, Sink): 1A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 27V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 8ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.25V
Current - Peak Output (Source, Sink): 1A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 24496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.34 грн |
| 10+ | 62.08 грн |
| 25+ | 56.23 грн |
| 100+ | 46.72 грн |
| 250+ | 43.83 грн |
| 500+ | 42.09 грн |
| 1000+ | 40.73 грн |
| FDMS4435BZ |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 9A/18A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V
Description: MOSFET P-CH 30V 9A/18A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V
на замовлення 6989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.34 грн |
| 10+ | 53.50 грн |
| 100+ | 35.22 грн |
| 500+ | 25.69 грн |
| 1000+ | 23.31 грн |
| FDD18N20LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V
на замовлення 2125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.28 грн |
| 10+ | 121.33 грн |
| 100+ | 83.32 грн |
| 500+ | 62.93 грн |
| 1000+ | 59.16 грн |
| FXMAR2102UMX |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR 8-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 28737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 16+ | 19.03 грн |
| 25+ | 16.92 грн |
| 100+ | 13.76 грн |
| 250+ | 12.74 грн |
| 500+ | 12.13 грн |
| 1000+ | 11.44 грн |
| FDD390N15ALZ |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 26A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.18 грн |
| 10+ | 99.39 грн |
| 100+ | 67.52 грн |
| 500+ | 50.56 грн |
| 1000+ | 46.44 грн |
| FAN4146ESX |
|
Виробник: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
на замовлення 3190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.22 грн |
| 10+ | 51.79 грн |
| 25+ | 48.65 грн |
| 100+ | 34.62 грн |
| 250+ | 29.46 грн |
| 500+ | 27.98 грн |
| 1000+ | 21.01 грн |
| FAN4147SX |
|
Виробник: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
Operating Temperature: -35°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
Operating Temperature: -35°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| FDD5N50NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 4651 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 10+ | 71.64 грн |
| 100+ | 47.85 грн |
| 500+ | 35.33 грн |
| 1000+ | 32.25 грн |
| FAN6982MY |
|
Виробник: onsemi
Description: IC PFC CTRLR CCM 75KHZ 14SOIC
Current - Startup: 30 µA
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 50kHz ~ 75kHz
Voltage - Supply: 11V ~ 22V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PFC CTRLR CCM 75KHZ 14SOIC
Current - Startup: 30 µA
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 50kHz ~ 75kHz
Voltage - Supply: 11V ~ 22V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FAN7389MX1 |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 306.86 грн |
| 10+ | 191.25 грн |
| 25+ | 164.14 грн |
| 100+ | 125.21 грн |
| 250+ | 111.07 грн |
| 500+ | 102.36 грн |
| FSA2466UMX |
|
Виробник: onsemi
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.6Ohm (Typ)
-3db Bandwidth: 240MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.45V
Charge Injection: 8pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 50ns, 32ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Last Time Buy
Number of Circuits: 2
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.6Ohm (Typ)
-3db Bandwidth: 240MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.45V
Charge Injection: 8pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 50ns, 32ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Last Time Buy
Number of Circuits: 2
на замовлення 2476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.52 грн |
| 12+ | 27.01 грн |
| 25+ | 24.15 грн |
| 100+ | 19.75 грн |
| 250+ | 18.36 грн |
| 500+ | 17.52 грн |
| 1000+ | 16.56 грн |
| FDMS7620S |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Part Status: Active
на замовлення 37648 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.28 грн |
| 10+ | 81.86 грн |
| 100+ | 55.35 грн |
| 500+ | 41.28 грн |
| 1000+ | 38.88 грн |
| FDMC86244 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
на замовлення 5289 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.38 грн |
| 10+ | 83.72 грн |
| 100+ | 56.36 грн |
| 500+ | 41.89 грн |
| 1000+ | 38.35 грн |
| FDS89141 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 1983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.62 грн |
| 10+ | 179.39 грн |
| 100+ | 125.92 грн |
| 500+ | 98.57 грн |
| FQS4903TF |
|
Виробник: onsemi
Description: MOSFET 2N-CH 500V 0.37A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 500V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2N-CH 500V 0.37A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 500V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.86 грн |
| 10+ | 110.89 грн |
| 100+ | 89.14 грн |
| FDMS8020 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.96 грн |
| 10+ | 80.37 грн |
| 100+ | 54.18 грн |
| 500+ | 40.32 грн |
| 1000+ | 36.93 грн |
| FDT86244 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V
на замовлення 461 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.61 грн |
| 10+ | 63.43 грн |
| 100+ | 42.12 грн |
| FDT86246 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
на замовлення 4606 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.96 грн |
| 10+ | 80.14 грн |
| 100+ | 53.92 грн |
| 500+ | 40.05 грн |
| 1000+ | 36.66 грн |
| 2000+ | 34.50 грн |
| EGP10G |
|
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
на замовлення 4032 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 14+ | 21.57 грн |
| 100+ | 17.07 грн |
| 500+ | 12.15 грн |
| 1000+ | 10.43 грн |
| 2000+ | 9.85 грн |
| FDMS7660AS |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
на замовлення 3554 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 93.50 грн |
| 100+ | 63.75 грн |
| 500+ | 47.89 грн |
| 1000+ | 44.05 грн |
| FSUSB74MPX |
|
Виробник: onsemi
Description: IC USB MUX/SWITCH 16MLP
Number of Channels: 1
Part Status: Active
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 2.5V ~ 4.4V
Supplier Device Package: 16-MLP (3x3)
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Description: IC USB MUX/SWITCH 16MLP
Number of Channels: 1
Part Status: Active
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 2.5V ~ 4.4V
Supplier Device Package: 16-MLP (3x3)
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
на замовлення 16357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.76 грн |
| 10+ | 65.74 грн |
| 25+ | 59.61 грн |
| 100+ | 49.58 грн |
| 250+ | 46.55 грн |
| 500+ | 45.45 грн |
| FDMS86105 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 6A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V
Description: MOSFET N-CH 100V 6A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.08 грн |
| 10+ | 117.45 грн |
| 100+ | 80.60 грн |
| 500+ | 60.84 грн |
| 1000+ | 57.02 грн |
| FDMC8030 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 12A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 12A
Drain to Source Voltage (Vdss): 40V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 12A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 12A
Drain to Source Voltage (Vdss): 40V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 8259 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 77.83 грн |
| 100+ | 60.58 грн |
| 500+ | 48.19 грн |
| 1000+ | 39.26 грн |
| FDMS8018 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
на замовлення 20164 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.00 грн |
| 10+ | 110.89 грн |
| 100+ | 75.84 грн |
| 500+ | 57.10 грн |
| 1000+ | 52.57 грн |
| FDMS86310 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 17A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V
Description: MOSFET N-CH 80V 17A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V
на замовлення 8175 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.80 грн |
| 10+ | 147.23 грн |
| 100+ | 102.36 грн |
| 500+ | 78.07 грн |
| 1000+ | 76.95 грн |
| FAN7081MX-GF085 |
|
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 2473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.42 грн |
| 10+ | 131.33 грн |
| 25+ | 111.42 грн |
| 100+ | 83.47 грн |
| 250+ | 73.11 грн |
| 500+ | 66.73 грн |
| 1000+ | 60.38 грн |
| FDMS86102LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
на замовлення 31360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.30 грн |
| 10+ | 136.85 грн |
| 100+ | 94.60 грн |
| 500+ | 71.83 грн |
| 1000+ | 69.29 грн |