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MMSZ5247B MMSZ5247B onsemi MMSZ5227B.pdf Description: DIODE ZENER 17V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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FDLL333 FDLL333 onsemi FDH300-D.PDF Description: DIODE STANDARD 125V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 mA
Current - Reverse Leakage @ Vr: 3 nA @ 125 V
на замовлення 16029 шт:
термін постачання 21-31 дні (днів)
34+9.35 грн
48+6.30 грн
100+5.80 грн
500+3.99 грн
1000+3.52 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
FJV1845FMTF FJV1845FMTF onsemi FJV1845.pdf Description: TRANS NPN 120V 0.05A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
на замовлення 10981 шт:
термін постачання 21-31 дні (днів)
24+13.24 грн
39+7.87 грн
100+4.84 грн
500+3.32 грн
1000+2.92 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
2SA1552S-E 2SA1552S-E onsemi en2262-d.pdf Description: TRANS PNP 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SA1552S-H 2SA1552S-H onsemi en2262-d.pdf Description: TRANS PNP 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SA1593S-E 2SA1593S-E onsemi en2511-d.pdf Description: TRANS PNP 100V 2A TP
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
4+80.22 грн
10+69.00 грн
Мінімальне замовлення: 4
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2SA1593T-E 2SA1593T-E onsemi en2511-d.pdf Description: TRANS PNP 100V 2A TP
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2SA2039-E 2SA2039-E onsemi en6912-d.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SA2039-H 2SA2039-H onsemi en6912-d.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SA2126-H 2SA2126-H onsemi en7990-d.pdf Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
6+57.63 грн
10+47.85 грн
100+33.14 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SA2205-E 2SA2205-E onsemi ena0544-d.pdf Description: TRANS PNP 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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2SB1201S-E 2SB1201S-E onsemi 2sb1201-d.pdf Description: TRANS PNP 50V 2A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SB1201T-E 2SB1201T-E onsemi Description: TRANS PNP 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SB1202S-E 2SB1202S-E onsemi 2sb1202-d.pdf Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1202T-E 2SB1202T-E onsemi 2sb1202-d.pdf Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1203S-E 2SB1203S-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1203S-H 2SB1203S-H onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1203T-E 2SB1203T-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1203T-H 2SB1203T-H onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1204S-E onsemi Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1204T-E onsemi Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1205S-E 2SB1205S-E onsemi en2114-d.pdf Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SB1205T-E 2SB1205T-E onsemi en2114-d.pdf Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SB1215S-E 2SB1215S-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SB1215T-E 2SB1215T-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP
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2SB1215T-H 2SB1215T-H onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SB1216S-E 2SB1216S-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS PNP 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SB1216T-E 2SB1216T-E onsemi 2SB1216%2C2SD1816.pdf Description: TRANS PNP 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SC3332S 2SC3332S onsemi 2SC3332.pdf Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
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2SC3332T 2SC3332T onsemi 2SC3332.pdf Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
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2SC4027S-H 2SC4027S-H onsemi en2262-d.pdf Description: TRANS NPN 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SC4027T-E 2SC4027T-E onsemi en2262-d.pdf Description: TRANS NPN 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SC4027T-H 2SC4027T-H onsemi en2262-d.pdf Description: TRANS NPN 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SC6098-E 2SC6098-E onsemi ena0413-d.pdf Description: TRANS NPN 80V 2.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
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2SC6099-E 2SC6099-E onsemi ena0435-d.pdf Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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2SD1012F-SPA 2SD1012F-SPA onsemi Description: TRANS NPN 15V 0.7A 3SPA
Packaging: Bulk
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
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2SD1012G-SPA 2SD1012G-SPA onsemi Description: TRANS NPN 15V 0.7A 3-SPA
Packaging: Bulk
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
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2SD1207S 2SD1207S onsemi 2SD1207.pdf Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1207T 2SD1207T onsemi 2SD1207.pdf Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1207U 2SD1207U onsemi 2SB892%2C2SD1207.pdf Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1685F 2SD1685F onsemi 2SD1685.pdf Description: TRANS NPN 20V 5A TO126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
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2SD1801S-E 2SD1801S-E onsemi en2112-d.pdf Description: TRANS NPN 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SD1802S-E 2SD1802S-E onsemi 2sb1202-d.pdf Description: TRANS NPN 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1803S-H 2SD1803S-H onsemi 2SB1203%2C2SD1803.pdf Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1803T-E 2SD1803T-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1803T-H 2SD1803T-H onsemi 2SB1203%2C2SD1803.pdf Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1805F-E 2SD1805F-E onsemi 2SD1805.pdf Description: TRANS NPN 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SD1805G-E 2SD1805G-E onsemi 2sd1805-d.pdf Description: TRANS NPN 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SD1815S-H 2SD1815S-H onsemi 2SB1215%2C2SD1815.pdf Description: TRANS NPN 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1815T-H 2SD1815T-H onsemi 2SB1215%2C2SD1815.pdf Description: TRANS NPN 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1816S-H 2SD1816S-H onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1816T-E 2SD1816T-E onsemi 2SB1216%2C2SD1816.pdf Description: TRANS NPN 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1816T-H 2SD1816T-H onsemi 2SB1216%2C2SD1816.pdf Description: TRANS NPN 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1835S 2SD1835S onsemi 2SD1835.pdf Description: TRANS NPN 50V 2A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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2SD1835T 2SD1835T onsemi 2SD1835.pdf Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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2SK596S-B 2SK596S-B onsemi Description: JFET N-CH 1MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 150 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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2SK715U onsemi Description: JFET N-CH 50MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-SPA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
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2SK715W 2SK715W onsemi Description: JFET N-CH 50MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-SPA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
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DBD250G onsemi DBD250.pdf Description: BRIDGE RECT 1PHASE 600V 6A
Packaging: Bulk
Package / Case: 4-Square
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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DBF250G DBF250G onsemi DBF250.pdf Description: BRIDGE RECT 1PHASE 600V 3.5A
Packaging: Bulk
Package / Case: 4-SIP, DBF
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MMSZ5247B MMSZ5227B.pdf
MMSZ5247B
Виробник: onsemi
Description: DIODE ZENER 17V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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FDLL333 FDH300-D.PDF
FDLL333
Виробник: onsemi
Description: DIODE STANDARD 125V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 mA
Current - Reverse Leakage @ Vr: 3 nA @ 125 V
на замовлення 16029 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.35 грн
48+6.30 грн
100+5.80 грн
500+3.99 грн
1000+3.52 грн
Мінімальне замовлення: 34
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FJV1845FMTF FJV1845.pdf
FJV1845FMTF
Виробник: onsemi
Description: TRANS NPN 120V 0.05A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
на замовлення 10981 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.24 грн
39+7.87 грн
100+4.84 грн
500+3.32 грн
1000+2.92 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
2SA1552S-E en2262-d.pdf
2SA1552S-E
Виробник: onsemi
Description: TRANS PNP 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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В кошику  од. на суму  грн.
2SA1552S-H en2262-d.pdf
2SA1552S-H
Виробник: onsemi
Description: TRANS PNP 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA1593S-E en2511-d.pdf
2SA1593S-E
Виробник: onsemi
Description: TRANS PNP 100V 2A TP
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+80.22 грн
10+69.00 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2SA1593T-E en2511-d.pdf
2SA1593T-E
Виробник: onsemi
Description: TRANS PNP 100V 2A TP
товару немає в наявності
В кошику  од. на суму  грн.
2SA2039-E en6912-d.pdf
2SA2039-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SA2039-H en6912-d.pdf
2SA2039-H
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
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2SA2126-H en7990-d.pdf
2SA2126-H
Виробник: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.63 грн
10+47.85 грн
100+33.14 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SA2205-E ena0544-d.pdf
2SA2205-E
Виробник: onsemi
Description: TRANS PNP 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SB1201S-E 2sb1201-d.pdf
2SB1201S-E
Виробник: onsemi
Description: TRANS PNP 50V 2A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SB1201T-E
2SB1201T-E
Виробник: onsemi
Description: TRANS PNP 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SB1202S-E 2sb1202-d.pdf
2SB1202S-E
Виробник: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1202T-E 2sb1202-d.pdf
2SB1202T-E
Виробник: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
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2SB1203S-E 2SB1203%2C2SD1803.pdf
2SB1203S-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1203S-H 2SB1203%2C2SD1803.pdf
2SB1203S-H
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1203T-E 2SB1203%2C2SD1803.pdf
2SB1203T-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
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2SB1203T-H 2SB1203%2C2SD1803.pdf
2SB1203T-H
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1204S-E
Виробник: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1204T-E
Виробник: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1205S-E en2114-d.pdf
2SB1205S-E
Виробник: onsemi
Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1205T-E en2114-d.pdf
2SB1205T-E
Виробник: onsemi
Description: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
товару немає в наявності
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2SB1215S-E en2539-d.pdf
2SB1215S-E
Виробник: onsemi
Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
товару немає в наявності
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2SB1215T-E en2539-d.pdf
2SB1215T-E
Виробник: onsemi
Description: TRANS PNP 100V 3A TP
товару немає в наявності
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2SB1215T-H en2539-d.pdf
2SB1215T-H
Виробник: onsemi
Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
товару немає в наявності
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2SB1216S-E 2sb1216_2sd1816-d.pdf
2SB1216S-E
Виробник: onsemi
Description: TRANS PNP 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
товару немає в наявності
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2SB1216T-E 2SB1216%2C2SD1816.pdf
2SB1216T-E
Виробник: onsemi
Description: TRANS PNP 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SC3332S 2SC3332.pdf
2SC3332S
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
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2SC3332T 2SC3332.pdf
2SC3332T
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
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2SC4027S-H en2262-d.pdf
2SC4027S-H
Виробник: onsemi
Description: TRANS NPN 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SC4027T-E en2262-d.pdf
2SC4027T-E
Виробник: onsemi
Description: TRANS NPN 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SC4027T-H en2262-d.pdf
2SC4027T-H
Виробник: onsemi
Description: TRANS NPN 160V 1.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SC6098-E ena0413-d.pdf
2SC6098-E
Виробник: onsemi
Description: TRANS NPN 80V 2.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
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2SC6099-E ena0435-d.pdf
2SC6099-E
Виробник: onsemi
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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2SD1012F-SPA
2SD1012F-SPA
Виробник: onsemi
Description: TRANS NPN 15V 0.7A 3SPA
Packaging: Bulk
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
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2SD1012G-SPA
2SD1012G-SPA
Виробник: onsemi
Description: TRANS NPN 15V 0.7A 3-SPA
Packaging: Bulk
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
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2SD1207S 2SD1207.pdf
2SD1207S
Виробник: onsemi
Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1207T 2SD1207.pdf
2SD1207T
Виробник: onsemi
Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1207U 2SB892%2C2SD1207.pdf
2SD1207U
Виробник: onsemi
Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1685F 2SD1685.pdf
2SD1685F
Виробник: onsemi
Description: TRANS NPN 20V 5A TO126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
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2SD1801S-E en2112-d.pdf
2SD1801S-E
Виробник: onsemi
Description: TRANS NPN 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SD1802S-E 2sb1202-d.pdf
2SD1802S-E
Виробник: onsemi
Description: TRANS NPN 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1803S-H 2SB1203%2C2SD1803.pdf
2SD1803S-H
Виробник: onsemi
Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1803T-E 2SB1203%2C2SD1803.pdf
2SD1803T-E
Виробник: onsemi
Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1803T-H 2SB1203%2C2SD1803.pdf
2SD1803T-H
Виробник: onsemi
Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1805F-E 2SD1805.pdf
2SD1805F-E
Виробник: onsemi
Description: TRANS NPN 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SD1805G-E 2sd1805-d.pdf
2SD1805G-E
Виробник: onsemi
Description: TRANS NPN 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SD1815S-H 2SB1215%2C2SD1815.pdf
2SD1815S-H
Виробник: onsemi
Description: TRANS NPN 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1815T-H 2SB1215%2C2SD1815.pdf
2SD1815T-H
Виробник: onsemi
Description: TRANS NPN 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1816S-H 2sb1216_2sd1816-d.pdf
2SD1816S-H
Виробник: onsemi
Description: TRANS NPN 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1816T-E 2SB1216%2C2SD1816.pdf
2SD1816T-E
Виробник: onsemi
Description: TRANS NPN 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1816T-H 2SB1216%2C2SD1816.pdf
2SD1816T-H
Виробник: onsemi
Description: TRANS NPN 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SD1835S 2SD1835.pdf
2SD1835S
Виробник: onsemi
Description: TRANS NPN 50V 2A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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2SD1835T 2SD1835.pdf
2SD1835T
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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2SK596S-B
2SK596S-B
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 150 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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2SK715U
Виробник: onsemi
Description: JFET N-CH 50MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-SPA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
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2SK715W
2SK715W
Виробник: onsemi
Description: JFET N-CH 50MA 3SPA
Packaging: Bulk
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-SPA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
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DBD250G DBD250.pdf
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 600V 6A
Packaging: Bulk
Package / Case: 4-Square
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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DBF250G DBF250.pdf
DBF250G
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 600V 3.5A
Packaging: Bulk
Package / Case: 4-SIP, DBF
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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