Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NVBG020N090SC1 | onsemi |
Description: SICFET N-CH 900V 9.8A/112A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V Power Dissipation (Max): 3.7W (Ta), 477W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12800 шт: термін постачання 21-31 дні (днів) |
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NTBG020N090SC1 | onsemi |
Description: SICFET N-CH 900V 9.8A/112A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V Power Dissipation (Max): 3.7W (Ta), 477W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V |
на замовлення 1045 шт: термін постачання 21-31 дні (днів) |
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FFSB1065B | onsemi |
Description: DIODE SIL CARB 650V 27A D2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 27A Supplier Device Package: D²PAK-2 (TO-263-2) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 727 шт: термін постачання 21-31 дні (днів) |
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NCP136CFCT120T2G | onsemi |
Description: IC REG LINEAR 1.2V 700MA 6WLCSP Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WLCSP (1.4x0.8) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.06V @ 700mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMT064N65S3H | onsemi |
Description: MOSFET N-CH 650V 40A 4TDFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3745 pF @ 400 V |
на замовлення 2893 шт: термін постачання 21-31 дні (днів) |
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NVBG020N090SC1 | onsemi |
Description: SICFET N-CH 900V 9.8A/112A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V Power Dissipation (Max): 3.7W (Ta), 477W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V Qualification: AEC-Q101 |
на замовлення 13428 шт: термін постачання 21-31 дні (днів) |
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NCP718AMT250TBG | onsemi |
Description: IC REG LINEAR 2.5V 800MA 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 800mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 24V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable, Soft Start Part Status: Active PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.49V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 1273 шт: термін постачання 21-31 дні (днів) |
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NLVVHC1G66DTT1G | onsemi |
Description: IC SWITCH SPST-NOX1 40OHM 5TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 40Ohm -3db Bandwidth: 180MHz Supplier Device Package: 5-TSOP Voltage - Supply, Single (V+): 2V ~ 5.5V Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 20ns, 20ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
товар відсутній |
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NCP136AFCT120T2G | onsemi |
Description: IC REG LINEAR 1.2V 700MA 6WLCSP Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WLCSP (1.4x0.8) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.06V @ 700mA Protection Features: Over Current, Over Temperature |
на замовлення 4963 шт: термін постачання 21-31 дні (днів) |
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NCP145CMX120TCG | onsemi |
Description: IC REG LINEAR 1.2V 500MA 4XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 110 µA |
на замовлення 1613 шт: термін постачання 21-31 дні (днів) |
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SBRS8190NT3G | onsemi |
Description: DIODE SCHOTTKY 90V 2A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 500 µV Qualification: AEC-Q101 |
на замовлення 72500 шт: термін постачання 21-31 дні (днів) |
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SBRS8130LNT3G | onsemi |
Description: DIODE SCHOTTKY 30V 2A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товар відсутній |
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SBRS8190NT3G | onsemi |
Description: DIODE SCHOTTKY 90V 2A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 500 µV Qualification: AEC-Q101 |
на замовлення 72500 шт: термін постачання 21-31 дні (днів) |
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CAT24C16WE-GT3 | onsemi |
Description: IC EEPROM 16KBIT I2C 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT24C64BWI-KT3JN | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 74328 шт: термін постачання 21-31 дні (днів) |
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1.5KE120CARL4 | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Packaging: Bulk Part Status: Obsolete |
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1.5KE36AC | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Packaging: Bulk Part Status: Obsolete |
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1.5KE150AG | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Packaging: Bulk |
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1.5KE36CARL4 | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Packaging: Bulk Part Status: Obsolete |
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1.5KE15CARL4 | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Packaging: Bulk Part Status: Obsolete |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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1.5KE24CARL4 | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Packaging: Bulk Part Status: Obsolete |
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CAT24C64WE-GT3 | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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1.5KE43CARL4 | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE Packaging: Bulk |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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LM2931CTV | onsemi |
Description: IC REG LINEAR ADJ LDO REGULATOR Packaging: Bulk Package / Case: TO-220-5 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: TO-220-5 Voltage - Output (Max): 29.5V Voltage - Output (Min/Fixed): 2.7V Control Features: Inhibit Part Status: Obsolete PSRR: 90dB (120Hz) Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
на замовлення 4194 шт: термін постачання 21-31 дні (днів) |
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LB11693-E | onsemi |
Description: 3PHASE MOTOR DRIVER Packaging: Bulk Part Status: Active |
на замовлення 53865 шт: термін постачання 21-31 дні (днів) |
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LM301A | onsemi |
Description: IC OPAMP GP 1 CIRCUIT Packaging: Bulk Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C (TA) Current - Supply: 1.8mA Slew Rate: 10V/µs Current - Input Bias: 70 nA Voltage - Input Offset: 2 mV Part Status: Active Number of Circuits: 1 Voltage - Supply Span (Min): 36 V Voltage - Supply Span (Max): 36 V |
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LB11922-ND-TLM-E | onsemi |
Description: 3PHASE MOTOR DRIVER Packaging: Bulk |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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2SC3330S | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk |
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MC33171DR2GH | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 180µA Slew Rate: 2.1V/µs Gain Bandwidth Product: 1.8 MHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 27 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 44 V |
на замовлення 359955 шт: термін постачання 21-31 дні (днів) |
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2SJ501-TB-E | onsemi |
Description: PCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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LM317MOT-000 | onsemi |
Description: IC REG LINEAR VOLTAGE REG Packaging: Bulk Part Status: Active |
на замовлення 13200 шт: термін постачання 21-31 дні (днів) |
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2SC3150M | onsemi |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220AB Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 50 W |
на замовлення 8626 шт: термін постачання 21-31 дні (днів) |
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2SC3150L | onsemi |
Description: TRANS NPN 800V 3A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220AB Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 50 W |
на замовлення 11665 шт: термін постачання 21-31 дні (днів) |
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2N3906ZL1 | onsemi |
Description: TRANS PNP 40V 0.2A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92 (TO-226) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
на замовлення 53800 шт: термін постачання 21-31 дні (днів) |
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MC33063ADR2GH | onsemi |
Description: IC REG LIN SWITCHING VOLT MODE Packaging: Bulk Part Status: Active |
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LM337MT | onsemi |
Description: IC REG LINEAR ADJ NEG REGULATOR Packaging: Bulk Part Status: Active |
на замовлення 2065 шт: термін постачання 21-31 дні (днів) |
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2SC3330T | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk |
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2SC3382S | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 400 mW |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
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2SC3383S-AA | onsemi |
Description: BIP NPN 0.2A 50V Packaging: Bulk |
на замовлення 103804 шт: термін постачання 21-31 дні (днів) |
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2N3904RLRE | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active |
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2SJ580-TD-E | onsemi |
Description: PCH 4V DRIVE SERIES Packaging: Bulk |
на замовлення 57444 шт: термін постачання 21-31 дні (днів) |
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2SJ562-TD-E | onsemi |
Description: PCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
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2SJ589LS | onsemi |
Description: POWER MOSFET MOTOR DRIVERS Packaging: Bulk |
на замовлення 27672 шт: термін постачання 21-31 дні (днів) |
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2SC3392-5-TB-E | onsemi |
Description: BIP NPN 0.5A 50V Packaging: Bulk |
на замовлення 210634 шт: термін постачання 21-31 дні (днів) |
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2SC3331T | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Part Status: Active |
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LB1212-E | onsemi |
Description: IC DARLINGTON DRIVER Packaging: Bulk |
на замовлення 3517 шт: термін постачання 21-31 дні (днів) |
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LM339DR2GH | onsemi |
Description: ANA SNGL SUP COMPT QUD Packaging: Bulk Part Status: Active |
на замовлення 26172 шт: термін постачання 21-31 дні (днів) |
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2SC3361-5-TB-E | onsemi |
Description: BIP NPNP 0.15A 50V Packaging: Bulk Part Status: Active |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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2SC3330T-AC | onsemi |
Description: BIP NPN 0.2A 50V Packaging: Bulk Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 200MHz Supplier Device Package: 3-SPA Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW |
на замовлення 125874 шт: термін постачання 21-31 дні (днів) |
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CS3842BGN8 | onsemi |
Description: CURRENT MODE PWM CONTROLLER 1A Packaging: Bulk Part Status: Active |
на замовлення 63350 шт: термін постачання 21-31 дні (днів) |
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2N3905 | onsemi |
Description: TRANS PNP 40V 0.2A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
на замовлення 10898 шт: термін постачання 21-31 дні (днів) |
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2SC3392-6-TB-E | onsemi |
Description: BIP NPN 0.5A 50V Packaging: Bulk |
товар відсутній |
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2SC3393S-AC | onsemi |
Description: BIP NPN 0.5A 50V Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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2N4403ZL1 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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2SC3331S | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Part Status: Active |
товар відсутній |
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2N4125RLRA | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active |
товар відсутній |
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2SC3396-TB-E | onsemi |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Part Status: Active |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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2SC3399 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Supplier Device Package: 3-SPA |
на замовлення 29270 шт: термін постачання 21-31 дні (днів) |
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2SC3331T-AA | onsemi |
Description: BIP NPN 0.2A 50V Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 713100 шт: термін постачання 21-31 дні (днів) |
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CAT25040HU4E-GT3 | onsemi |
Description: IC EEPROM 4KBIT SPI 8UDFN Packaging: Bulk Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 8-UDFN-EP (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товар відсутній |
NVBG020N090SC1 |
Виробник: onsemi
Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 3044.13 грн |
NTBG020N090SC1 |
Виробник: onsemi
Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
на замовлення 1045 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2556.42 грн |
10+ | 2187.38 грн |
100+ | 1913.13 грн |
FFSB1065B |
Виробник: onsemi
Description: DIODE SIL CARB 650V 27A D2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: D²PAK-2 (TO-263-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 27A D2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 27A
Supplier Device Package: D²PAK-2 (TO-263-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 727 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 253.4 грн |
10+ | 219.07 грн |
100+ | 179.49 грн |
NCP136CFCT120T2G |
Виробник: onsemi
Description: IC REG LINEAR 1.2V 700MA 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.2V 700MA 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.01 грн |
10+ | 34.34 грн |
25+ | 32.26 грн |
100+ | 22.94 грн |
250+ | 19.52 грн |
500+ | 18.55 грн |
1000+ | 13.92 грн |
2500+ | 12.96 грн |
NTMT064N65S3H |
Виробник: onsemi
Description: MOSFET N-CH 650V 40A 4TDFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3745 pF @ 400 V
Description: MOSFET N-CH 650V 40A 4TDFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3745 pF @ 400 V
на замовлення 2893 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 574.18 грн |
10+ | 473.9 грн |
100+ | 394.95 грн |
500+ | 327.03 грн |
1000+ | 294.33 грн |
NVBG020N090SC1 |
Виробник: onsemi
Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
Description: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
на замовлення 13428 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4058.55 грн |
10+ | 3552.9 грн |
100+ | 3197.56 грн |
NCP718AMT250TBG |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 800MA 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.5V 800MA 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 1273 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 49.84 грн |
10+ | 42.38 грн |
25+ | 39.8 грн |
100+ | 28.32 грн |
250+ | 24.1 грн |
500+ | 22.9 грн |
1000+ | 17.19 грн |
NLVVHC1G66DTT1G |
Виробник: onsemi
Description: IC SWITCH SPST-NOX1 40OHM 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 40Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 5-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 20ns, 20ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPST-NOX1 40OHM 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 40Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 5-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 20ns, 20ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
товар відсутній
NCP136AFCT120T2G |
Виробник: onsemi
Description: IC REG LINEAR 1.2V 700MA 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.2V 700MA 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
на замовлення 4963 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.01 грн |
10+ | 34.34 грн |
25+ | 32.26 грн |
100+ | 22.94 грн |
250+ | 19.52 грн |
500+ | 18.55 грн |
1000+ | 13.92 грн |
2500+ | 12.96 грн |
NCP145CMX120TCG |
Виробник: onsemi
Description: IC REG LINEAR 1.2V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
Description: IC REG LINEAR 1.2V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
на замовлення 1613 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.18 грн |
12+ | 23.73 грн |
25+ | 21.68 грн |
100+ | 13.73 грн |
250+ | 11.36 грн |
500+ | 10.41 грн |
1000+ | 7.68 грн |
SBRS8190NT3G |
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 µV
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 µV
Qualification: AEC-Q101
на замовлення 72500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 9.44 грн |
5000+ | 8.63 грн |
12500+ | 8.01 грн |
25000+ | 7.34 грн |
62500+ | 7.16 грн |
SBRS8130LNT3G |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товар відсутній
SBRS8190NT3G |
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 µV
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 500 µV
Qualification: AEC-Q101
на замовлення 72500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.08 грн |
12+ | 23.05 грн |
100+ | 16.02 грн |
500+ | 11.74 грн |
1000+ | 9.54 грн |
CAT24C16WE-GT3 |
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT24C64BWI-KT3JN |
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 74328 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 4.5 грн |
1.5KE120CARL4 |
товар відсутній
1.5KE36AC |
товар відсутній
1.5KE150AG |
товар відсутній
1.5KE36CARL4 |
товар відсутній
1.5KE15CARL4 |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 6.48 грн |
1.5KE24CARL4 |
товар відсутній
CAT24C64WE-GT3 |
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
1.5KE43CARL4 |
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 6.48 грн |
LM2931CTV |
Виробник: onsemi
Description: IC REG LINEAR ADJ LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LINEAR ADJ LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
на замовлення 4194 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1480+ | 12.96 грн |
LB11693-E |
на замовлення 53865 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
287+ | 69.76 грн |
LM301A |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT
Packaging: Bulk
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 1.8mA
Slew Rate: 10V/µs
Current - Input Bias: 70 nA
Voltage - Input Offset: 2 mV
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 1 CIRCUIT
Packaging: Bulk
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 1.8mA
Slew Rate: 10V/µs
Current - Input Bias: 70 nA
Voltage - Input Offset: 2 mV
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
товар відсутній
LB11922-ND-TLM-E |
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
523+ | 36.48 грн |
2SC3330S |
товар відсутній
MC33171DR2GH |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 180µA
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 180µA
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
на замовлення 359955 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
606+ | 32.41 грн |
2SJ501-TB-E |
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.07 грн |
LM317MOT-000 |
на замовлення 13200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
833+ | 23.33 грн |
2SC3150M |
Виробник: onsemi
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 8626 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
740+ | 26.57 грн |
2SC3150L |
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
Description: TRANS NPN 800V 3A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 11665 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
701+ | 27.87 грн |
2N3906ZL1 |
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 53800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.94 грн |
MC33063ADR2GH |
товар відсутній
LM337MT |
на замовлення 2065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
919+ | 21.39 грн |
2SC3330T |
товар відсутній
2SC3382S |
Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1902+ | 10.37 грн |
2SC3383S-AA |
на замовлення 103804 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5323+ | 3.89 грн |
2N3904RLRE |
товар відсутній
2SJ580-TD-E |
на замовлення 57444 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1158+ | 16.85 грн |
2SJ562-TD-E |
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1665+ | 11.67 грн |
2SJ589LS |
на замовлення 27672 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
333+ | 58.33 грн |
2SC3392-5-TB-E |
на замовлення 210634 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3806+ | 5.19 грн |
2SC3331T |
товар відсутній
LB1212-E |
на замовлення 3517 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
606+ | 32.41 грн |
LM339DR2GH |
на замовлення 26172 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1665+ | 11.67 грн |
2SC3361-5-TB-E |
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 4.54 грн |
2SC3330T-AC |
Виробник: onsemi
Description: BIP NPN 0.2A 50V
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 200MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Description: BIP NPN 0.2A 50V
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 200MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
на замовлення 125874 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.24 грн |
CS3842BGN8 |
на замовлення 63350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
888+ | 22.04 грн |
2N3905 |
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 10898 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 4.54 грн |
2SC3393S-AC |
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1665+ | 11.67 грн |
2N4403ZL1 |
Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: TO-92 (TO-226)
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: TO-92 (TO-226)
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12000+ | 1.94 грн |
2SC3331S |
товар відсутній
2N4125RLRA |
товар відсутній
2SC3396-TB-E |
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5323+ | 3.89 грн |
2SC3399 |
Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: 3-SPA
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: 3-SPA
на замовлення 29270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.24 грн |
2SC3331T-AA |
Виробник: onsemi
Description: BIP NPN 0.2A 50V
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: BIP NPN 0.2A 50V
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 713100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.94 грн |
CAT25040HU4E-GT3 |
Виробник: onsemi
Description: IC EEPROM 4KBIT SPI 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT SPI 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній