| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MJD2955RLG | onsemi |
Description: TRANS PNP 60V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP4371AADDR2G | onsemi |
Description: IC BATT CHG 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 8-SOIC Fault Protection: Short Circuit Voltage - Supply (Max): 28V Battery Pack Voltage: 12V Current - Charging: Constant |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP4371BBCDDR2G | onsemi |
Description: IC BATT CHG 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 8-SOIC Fault Protection: Short Circuit Voltage - Supply (Max): 28V Battery Pack Voltage: 20V Current - Charging: Constant |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NL27WZ16DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5VPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-74 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVBS260T3G-RG01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVBSS26T3G-RG01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUS2BA | onsemi |
Description: DIODE GEN PURP 100V 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSS60200DMTTBG | onsemi |
Description: TRANS PNP 60V 2A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBRA8160T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 60V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZESD5Z3.3T5G | onsemi |
Description: TVS DIODE 3.3VWM 14.1VC SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 14.1V Power - Peak Pulse: 158W Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| AR0230CSSC12SUEA0-DP | onsemi |
Description: IMAGE SENSOR CMOS IBGA80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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AR0237CSSC12SHRA0-DP | onsemi |
Description: IMAGE SENSOR 2MP CMOS 48PLCC Packaging: Tray Package / Case: 48-PLCC Type: CMOS Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HCPL2611SM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMDPackaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD122-1G | onsemi |
Description: TRANS NPN DARL 100V 8A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3053SR2M | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 6mA Part Status: Active Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MARS1-AR0233ATSCS-GEVB | onsemi |
Description: EVAL BOARD IMAGE SENSOR Packaging: Box Sensor Type: Image Sensor Utilized IC / Part: AR0233AT Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| MARS1-KSZ8081MNX-GEVB | onsemi |
Description: EVAL BOARD IMAGE SENSOR Packaging: Box Sensor Type: Image Sensor Supplied Contents: Board(s) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MARS1-MAX9295A-GEVK | onsemi | Description: EVAL BOARD IMAGE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MARS1-MAX9296B-GEVB | onsemi | Description: EVAL BOARD IMAGE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK1-CER-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK1-PCB-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK2MT-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK2-PCB-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK2-PET-GEVK | onsemi |
Description: EVAL SMART PASSIVE SENSOR Packaging: Box Type: RFID Reader Supplied Contents: Board(s), Cable(s), Power Supply, Accessories Contents: Board(s), Cable(s), Power Supply, Accessories |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSPRDA2-P | onsemi |
Description: UHF ANTENNA RF-SMA Packaging: Box Mounting Type: Chassis Mount Frequency Range: 865MHz ~ 928MHz Applications: General Purpose Gain: 6dBi Termination: RP-SMA Number of Bands: 1 VSWR: 2 Antenna Type: Module Frequency Group: UHF (300MHz ~ 1GHz) Frequency (Center/Band): 896MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDD4141-F085P | onsemi |
Description: MOSFET P-CH 40V 10.8A/50A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V Power Dissipation (Max): 2.4W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FSL538HPG | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIP |
на замовлення 5988 шт: термін постачання 21-31 дні (днів) |
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NCP105AMX180TBG | onsemi |
Description: IC REG LINEAR 1.8V 150MA 4XDFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Obsolete PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.33V @ 150mA Protection Features: Current Limit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP139AFCT105T2G | onsemi |
Description: IC REG LINEAR 1.05V 1A 6WLCSPPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WLCSP (1.2x0.8) Voltage - Output (Min/Fixed): 1.05V Control Features: Enable PSRR: 85dB ~ 70dB (1kHz) Voltage Dropout (Max): 1.5V @ 1A Protection Features: Under Voltage Lockout (UVLO) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| LC898249XHTBG | onsemi |
Description: AF CONTROL DRIVER Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 150mA Interface: Serial Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 2.6V ~ 3.3V Applications: General Purpose Technology: CMOS Supplier Device Package: 6-WLCSP (0.86x1.75) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV51705MNTWG | onsemi |
Description: IC GATE DRVR LOW-SIDE 24QFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 22V Input Type: Inverting, Non-Inverting Supplier Device Package: 24-QFNW (4x4) Rise / Fall Time (Typ): 8ns, 8ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.6V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5568 шт: термін постачання 21-31 дні (днів) |
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NCV7357MW3R2G | onsemi |
Description: IC TRANSCEIVER FULL 2/1 8DFNWPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 2/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: 8-DFNW (3x3) Duplex: Full Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1165 шт: термін постачання 21-31 дні (днів) |
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NCV8187AMN120TAG | onsemi |
Description: IC REG LINEAR 1.2V 1.2A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 1.2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Power Good Grade: Automotive PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.495V @ 1.2A Protection Features: Over Current, Over Temperature, Soft Start Qualification: AEC-Q100 |
на замовлення 4903 шт: термін постачання 21-31 дні (днів) |
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NCV8187AMT120TAG | onsemi |
Description: IC REG LINEAR 1.2V 1.2A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Power Good Grade: Automotive PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.495V @ 1.2A Protection Features: Over Current, Over Temperature, Soft Start Qualification: AEC-Q100 |
на замовлення 4217 шт: термін постачання 21-31 дні (днів) |
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| NIS5021MT2TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFNPackaging: Cut Tape (CT) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 18V Current - Output: 12A Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-WDFN (4x4) Part Status: Obsolete |
на замовлення 2514 шт: термін постачання 21-31 дні (днів) |
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NTTFS010N10MCLTAG | onsemi |
Description: MOSFET N-CH 100V 10.7A/50A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 2.3W (Ta),52W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V |
на замовлення 33258 шт: термін постачання 21-31 дні (днів) |
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NVB150N65S3F | onsemi |
Description: MOSFET N-CH 650V 24A D2PAK-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 98150 шт: термін постачання 21-31 дні (днів) |
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NVMFD6H852NLT1G | onsemi |
Description: MOSFET N-CH 80V 7A/25A 8DFN DLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1365 шт: термін постачання 21-31 дні (днів) |
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NVMFD6H852NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 7A/25A 8DFN DLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5420 шт: термін постачання 21-31 дні (днів) |
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NVMJS1D5N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 38A/200A 8LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NVMJS2D5N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 31A/164A 8LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2V @ 135µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2787 шт: термін постачання 21-31 дні (днів) |
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NVMYS010N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 14A/38A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMYS011N04CTWG | onsemi |
Description: MOSFET N-CH 40V 13A/35A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 29984 шт: термін постачання 21-31 дні (днів) |
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NVMYS014N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 12A/36A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMYS021N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 678 шт: термін постачання 21-31 дні (днів) |
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NVMYS025N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1864 шт: термін постачання 21-31 дні (днів) |
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NVMYS3D3N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 26A/133A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 17675 шт: термін постачання 21-31 дні (днів) |
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NVMYS5D3N04CTWG | onsemi |
Description: MOSFET N-CH 40V 19A/71A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMYS7D3N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 17A/52A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 74163 шт: термін постачання 21-31 дні (днів) |
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NVTFS010N10MCLTAG | onsemi |
Description: MOSFET N-CH 100V 11.7A/57.8 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3408 шт: термін постачання 21-31 дні (днів) |
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M74VHC1GT66DFT2G | onsemi |
Description: IC SWITCH SPST-NOX1 40OHM SC88APackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 40Ohm -3db Bandwidth: 180MHz Supplier Device Package: SC-88A (SC-70-5/SOT-353) Voltage - Supply, Single (V+): 2V ~ 5.5V Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV-RSL10-101Q48-AVG | onsemi |
Description: IC RF TXRX+MCU 802.15.4 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Sensitivity: -97dBm Mounting Type: Surface Mount, Wettable Flank Frequency: 2.36GHz ~ 2.5GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.18V ~ 3.3V Power - Output: 3dBm Protocol: Bluetooth v5.0, Thread, Zigbee® Current - Receiving: 3mA ~ 3.4mA Data Rate (Max): 2Mbps Current - Transmitting: 4.6mA ~ 12mA Supplier Device Package: 48-QFNW (7x7) Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK RF Family/Standard: 802.15.4, Bluetooth Serial Interfaces: GPIO, I2C, SPI, PCM, UART Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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NV24C08DWVLT3G | onsemi |
Description: IC EEPROM 8KBIT I2C 1MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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NCV-RSL10-101Q48-AVG | onsemi |
Description: IC RF TXRX+MCU 802.15.4 48QFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Sensitivity: -97dBm Mounting Type: Surface Mount, Wettable Flank Frequency: 2.36GHz ~ 2.5GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.18V ~ 3.3V Power - Output: 3dBm Protocol: Bluetooth v5.0, Thread, Zigbee® Current - Receiving: 3mA ~ 3.4mA Data Rate (Max): 2Mbps Current - Transmitting: 4.6mA ~ 12mA Supplier Device Package: 48-QFNW (7x7) Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK RF Family/Standard: 802.15.4, Bluetooth Serial Interfaces: GPIO, I2C, SPI, PCM, UART Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 61881 шт: термін постачання 21-31 дні (днів) |
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NV24C08DWVLT3G | onsemi |
Description: IC EEPROM 8KBIT I2C 1MHZ 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 54334 шт: термін постачання 21-31 дні (днів) |
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FDMF3170 | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 39QFNPackaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Current - Output / Channel: 55A Current - Peak Output: 70A Technology: Power MOSFET Voltage - Load: 4.5V ~ 16V Supplier Device Package: 39-PQFN (5x6) Fault Protection: Current Limiting, Over Temperature, UVLO Load Type: Inductive |
на замовлення 16426 шт: термін постачання 21-31 дні (днів) |
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SRV05-4MR6T1G | onsemi |
Description: TVS DIODE 5VWM 17.5VC 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17.5V Power - Peak Pulse: 300W Power Line Protection: Yes Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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MT9P031I12STM-DP | onsemi |
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC |
на замовлення 6567 шт: термін постачання 21-31 дні (днів) |
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SZMM5Z10VT5G | onsemi |
Description: DIODE ZENER 10V 500MW SOD523Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZMM5Z10VT5G | onsemi |
Description: DIODE ZENER 10V 500MW SOD523Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
на замовлення 6750 шт: термін постачання 21-31 дні (днів) |
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| MJD2955RLG |
Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
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од. на суму грн.
| NCP4371AADDR2G |
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Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
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| NCP4371BBCDDR2G |
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Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
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од. на суму грн.
| NL27WZ16DBVT1G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
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| NRVBS260T3G-RG01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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| NRVBSS26T3G-RG01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| NRVUS2BA |
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Виробник: onsemi
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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| NSS60200DMTTBG |
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Виробник: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
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| SBRA8160T3G-VF01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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| SZESD5Z3.3T5G |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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| AR0230CSSC12SUEA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR CMOS IBGA80
Description: IMAGE SENSOR CMOS IBGA80
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| AR0237CSSC12SHRA0-DP |
Виробник: onsemi
Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
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| HCPL2611SM |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
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| MJD122-1G |
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Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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| MOC3053SR2M |
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Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
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| MARS1-AR0233ATSCS-GEVB |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0233AT
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0233AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 23531.69 грн |
| MARS1-KSZ8081MNX-GEVB |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Supplied Contents: Board(s)
Part Status: Active
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| MARS1-MAX9295A-GEVK |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Description: EVAL BOARD IMAGE SENSOR
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| MARS1-MAX9296B-GEVB |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Description: EVAL BOARD IMAGE SENSOR
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| SPSDEVK1-CER-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
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| SPSDEVK1-PCB-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
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| SPSDEVK2MT-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
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| SPSDEVK2-PCB-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
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| SPSDEVK2-PET-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Packaging: Box
Type: RFID Reader
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Contents: Board(s), Cable(s), Power Supply, Accessories
Description: EVAL SMART PASSIVE SENSOR
Packaging: Box
Type: RFID Reader
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Contents: Board(s), Cable(s), Power Supply, Accessories
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| SPSPRDA2-P |
Виробник: onsemi
Description: UHF ANTENNA RF-SMA
Packaging: Box
Mounting Type: Chassis Mount
Frequency Range: 865MHz ~ 928MHz
Applications: General Purpose
Gain: 6dBi
Termination: RP-SMA
Number of Bands: 1
VSWR: 2
Antenna Type: Module
Frequency Group: UHF (300MHz ~ 1GHz)
Frequency (Center/Band): 896MHz
Description: UHF ANTENNA RF-SMA
Packaging: Box
Mounting Type: Chassis Mount
Frequency Range: 865MHz ~ 928MHz
Applications: General Purpose
Gain: 6dBi
Termination: RP-SMA
Number of Bands: 1
VSWR: 2
Antenna Type: Module
Frequency Group: UHF (300MHz ~ 1GHz)
Frequency (Center/Band): 896MHz
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| FDD4141-F085P |
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Виробник: onsemi
Description: MOSFET P-CH 40V 10.8A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 10.8A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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| FSL538HPG |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Description: IC OFFLINE SWITCH FLYBACK 7DIP
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.50 грн |
| 10+ | 108.47 грн |
| 25+ | 102.30 грн |
| 100+ | 81.81 грн |
| 250+ | 76.82 грн |
| 500+ | 67.22 грн |
| 1000+ | 54.78 грн |
| 2500+ | 51.00 грн |
| 5000+ | 49.11 грн |
| NCP105AMX180TBG |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.33V @ 150mA
Protection Features: Current Limit
Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.33V @ 150mA
Protection Features: Current Limit
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| NCP139AFCT105T2G |
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Виробник: onsemi
Description: IC REG LINEAR 1.05V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 1.05V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Under Voltage Lockout (UVLO)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.94 грн |
| 10000+ | 15.30 грн |
| 15000+ | 14.79 грн |
| LC898249XHTBG |
Виробник: onsemi
Description: AF CONTROL DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 150mA
Interface: Serial
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Technology: CMOS
Supplier Device Package: 6-WLCSP (0.86x1.75)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Description: AF CONTROL DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 150mA
Interface: Serial
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Technology: CMOS
Supplier Device Package: 6-WLCSP (0.86x1.75)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
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| NCV51705MNTWG |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFNW (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFNW (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5568 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 389.84 грн |
| 10+ | 242.99 грн |
| 100+ | 173.39 грн |
| 500+ | 137.23 грн |
| 1000+ | 130.50 грн |
| NCV7357MW3R2G |
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Виробник: onsemi
Description: IC TRANSCEIVER FULL 2/1 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-DFNW (3x3)
Duplex: Full
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER FULL 2/1 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-DFNW (3x3)
Duplex: Full
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1165 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.25 грн |
| 10+ | 88.60 грн |
| 25+ | 74.48 грн |
| 100+ | 54.93 грн |
| 250+ | 47.58 грн |
| 500+ | 43.06 грн |
| 1000+ | 38.63 грн |
| NCV8187AMN120TAG |
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Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
Description: IC REG LINEAR 1.2V 1.2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
на замовлення 4903 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.40 грн |
| 10+ | 58.99 грн |
| 25+ | 49.19 грн |
| 100+ | 35.76 грн |
| 250+ | 30.65 грн |
| 500+ | 27.50 грн |
| 1000+ | 24.46 грн |
| 2500+ | 21.67 грн |
| NCV8187AMT120TAG |
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Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
на замовлення 4217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.34 грн |
| 10+ | 44.87 грн |
| 25+ | 42.15 грн |
| 100+ | 29.98 грн |
| 250+ | 25.52 грн |
| 500+ | 24.24 грн |
| 1000+ | 18.20 грн |
| NIS5021MT2TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 18V
Current - Output: 12A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (4x4)
Part Status: Obsolete
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 18V
Current - Output: 12A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (4x4)
Part Status: Obsolete
на замовлення 2514 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.29 грн |
| 10+ | 143.97 грн |
| 25+ | 135.84 грн |
| 100+ | 108.61 грн |
| 250+ | 101.98 грн |
| 500+ | 89.23 грн |
| 1000+ | 72.72 грн |
| NTTFS010N10MCLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
на замовлення 33258 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.31 грн |
| 10+ | 79.54 грн |
| 100+ | 57.85 грн |
| 500+ | 49.25 грн |
| NVB150N65S3F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 98150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 372.59 грн |
| 10+ | 238.69 грн |
| 100+ | 170.52 грн |
| NVMFD6H852NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.70 грн |
| 10+ | 62.77 грн |
| 100+ | 46.10 грн |
| 500+ | 35.07 грн |
| NVMFD6H852NLWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5420 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.41 грн |
| 10+ | 86.11 грн |
| 100+ | 58.06 грн |
| 500+ | 43.21 грн |
| NVMJS1D5N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.29 грн |
| 10+ | 102.80 грн |
| 100+ | 70.24 грн |
| 500+ | 52.83 грн |
| 1000+ | 52.04 грн |
| NVMJS2D5N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2787 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 176.49 грн |
| 10+ | 109.60 грн |
| 100+ | 75.01 грн |
| 500+ | 56.54 грн |
| 1000+ | 56.26 грн |
| NVMYS010N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 14A/38A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 14A/38A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.03 грн |
| 10+ | 46.15 грн |
| 100+ | 33.98 грн |
| 500+ | 27.23 грн |
| 1000+ | 24.87 грн |
| NVMYS011N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.99 грн |
| 10+ | 54.91 грн |
| 100+ | 36.35 грн |
| 500+ | 26.64 грн |
| 1000+ | 24.24 грн |
| NVMYS014N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVMYS021N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
на замовлення 678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.99 грн |
| 10+ | 55.59 грн |
| 100+ | 36.85 грн |
| 500+ | 27.02 грн |
| NVMYS025N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.85 грн |
| 10+ | 53.25 грн |
| 100+ | 35.21 грн |
| 500+ | 25.77 грн |
| 1000+ | 23.43 грн |
| NVMYS3D3N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.43 грн |
| 10+ | 104.92 грн |
| 100+ | 71.45 грн |
| 500+ | 53.62 грн |
| 1000+ | 49.30 грн |
| NVMYS5D3N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.65 грн |
| 10+ | 59.82 грн |
| 100+ | 41.71 грн |
| 500+ | 32.94 грн |
| 1000+ | 30.13 грн |
| NVMYS7D3N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 74163 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.03 грн |
| 10+ | 66.39 грн |
| 100+ | 44.16 грн |
| 500+ | 32.50 грн |
| 1000+ | 29.62 грн |
| NVTFS010N10MCLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3408 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.60 грн |
| 10+ | 80.82 грн |
| 100+ | 55.81 грн |
| 500+ | 44.55 грн |
| M74VHC1GT66DFT2G |
![]() |
Виробник: onsemi
Description: IC SWITCH SPST-NOX1 40OHM SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 40Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPST-NOX1 40OHM SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 40Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| NCV-RSL10-101Q48-AVG |
![]() |
Виробник: onsemi
Description: IC RF TXRX+MCU 802.15.4 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.36GHz ~ 2.5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.18V ~ 3.3V
Power - Output: 3dBm
Protocol: Bluetooth v5.0, Thread, Zigbee®
Current - Receiving: 3mA ~ 3.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 4.6mA ~ 12mA
Supplier Device Package: 48-QFNW (7x7)
Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK
RF Family/Standard: 802.15.4, Bluetooth
Serial Interfaces: GPIO, I2C, SPI, PCM, UART
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC RF TXRX+MCU 802.15.4 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.36GHz ~ 2.5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.18V ~ 3.3V
Power - Output: 3dBm
Protocol: Bluetooth v5.0, Thread, Zigbee®
Current - Receiving: 3mA ~ 3.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 4.6mA ~ 12mA
Supplier Device Package: 48-QFNW (7x7)
Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK
RF Family/Standard: 802.15.4, Bluetooth
Serial Interfaces: GPIO, I2C, SPI, PCM, UART
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 287.87 грн |
| NV24C08DWVLT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.23 грн |
| 6000+ | 15.25 грн |
| NCV-RSL10-101Q48-AVG |
![]() |
Виробник: onsemi
Description: IC RF TXRX+MCU 802.15.4 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.36GHz ~ 2.5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.18V ~ 3.3V
Power - Output: 3dBm
Protocol: Bluetooth v5.0, Thread, Zigbee®
Current - Receiving: 3mA ~ 3.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 4.6mA ~ 12mA
Supplier Device Package: 48-QFNW (7x7)
Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK
RF Family/Standard: 802.15.4, Bluetooth
Serial Interfaces: GPIO, I2C, SPI, PCM, UART
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC RF TXRX+MCU 802.15.4 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.36GHz ~ 2.5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.18V ~ 3.3V
Power - Output: 3dBm
Protocol: Bluetooth v5.0, Thread, Zigbee®
Current - Receiving: 3mA ~ 3.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 4.6mA ~ 12mA
Supplier Device Package: 48-QFNW (7x7)
Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK
RF Family/Standard: 802.15.4, Bluetooth
Serial Interfaces: GPIO, I2C, SPI, PCM, UART
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 61881 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 457.30 грн |
| 10+ | 382.05 грн |
| 25+ | 361.60 грн |
| 100+ | 313.00 грн |
| 250+ | 297.20 грн |
| 500+ | 286.05 грн |
| 1000+ | 271.03 грн |
| NV24C08DWVLT3G |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 54334 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 23.42 грн |
| 25+ | 22.84 грн |
| 50+ | 21.00 грн |
| 100+ | 20.54 грн |
| 250+ | 19.95 грн |
| 500+ | 19.18 грн |
| 1000+ | 18.74 грн |
| FDMF3170 |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 70A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 55A 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 70A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
на замовлення 16426 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 314.54 грн |
| 10+ | 200.39 грн |
| 100+ | 141.75 грн |
| 500+ | 109.49 грн |
| 1000+ | 101.91 грн |
| SRV05-4MR6T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 17.5VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5VWM 17.5VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.77 грн |
| 10+ | 139.36 грн |
| MT9P031I12STM-DP |
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Виробник: onsemi
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
на замовлення 6567 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2024.51 грн |
| 5+ | 1860.70 грн |
| 10+ | 1683.42 грн |
| 25+ | 1455.08 грн |
| 40+ | 1288.77 грн |
| 80+ | 1247.21 грн |
| 440+ | 1144.98 грн |
| SZMM5Z10VT5G |
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Виробник: onsemi
Description: DIODE ZENER 10V 500MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 500MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SZMM5Z10VT5G |
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Виробник: onsemi
Description: DIODE ZENER 10V 500MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 500MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
на замовлення 6750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.61 грн |
| 24+ | 12.77 грн |
| 100+ | 5.62 грн |
| 500+ | 5.18 грн |
| 1000+ | 5.09 грн |
| 2000+ | 5.06 грн |































