Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DTC123EM3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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DTC123EM3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ20VALT3G | onsemi |
Description: TVS DIODE 17VWM 28VC SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.4A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 28V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1780000 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ20VALT3G | onsemi |
Description: TVS DIODE 17VWM 28VC SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.4A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 28V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1780000 шт: термін постачання 21-31 дні (днів) |
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NCP1253BSN65T1G | onsemi |
Description: IC PWM CTLR OCP AUTO Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.8V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Open Loop, Over Voltage, Short Circuit Voltage - Start Up: 18 V Control Features: Frequency Control, Soft Start Part Status: Active |
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NL17SZ08MU1TCG | onsemi |
Description: IC GATE AND 1CH 2-INP 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-UDFN (1.45x1) Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
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NL17SZ08MU1TCG | onsemi |
Description: IC GATE AND 1CH 2-INP 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-UDFN (1.45x1) Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
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FDMS86369 | onsemi |
Description: FET 80V 7.5MOHM PQFN8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 65A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (5.2x6.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V |
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NUS1204MNT1G | onsemi | Description: IC OVP W/P-CH MOSFET WDFN6 2X2 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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KSC2330YTA | onsemi | Description: TRANS NPN 300V 0.1A TO92-3 |
на замовлення 61302 шт: термін постачання 21-31 дні (днів) |
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CAT808NTDI-27GT3 | onsemi | Description: IC VOLT DETECT LP PREC TSOT23-5 |
на замовлення 34339 шт: термін постачання 21-31 дні (днів) |
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CAT808NTDI-32GT3 | onsemi | Description: IC VOLT DETECT LP PREC TSOT23-5 |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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NSVDTC144WET1G | onsemi | Description: NSVDTC144 - BIAS RESISTOR TRANSI |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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NCP51200AMNTXG | onsemi |
Description: 3A DDR / VTT TERMINATION Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Voltage - Output: 1.8V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 2.375V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Applications: LDO (Linear), DDR Supplier Device Package: 10-DFN (3x3) Part Status: Active |
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NCP4371AADDR2G | onsemi |
Description: IC BATT CHG 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 8-SOIC Fault Protection: Short Circuit Voltage - Supply (Max): 28V Battery Pack Voltage: 12V Current - Charging: Constant |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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NCV86601BDT50RKG | onsemi | Description: IC REG LINEAR 5V 150MA DPAK-5 |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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SURS8220T3G | onsemi | Description: DIODE GEN PURP 200V 2A SMB |
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SURS8220T3G-IR01 | onsemi | Description: DIODE GP ULT FAST 200V 2A SMB |
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FDC6561AN-NB5S007A | onsemi |
Description: FET 30V 95.0 MOHM SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 |
на замовлення 22283 шт: термін постачання 21-31 дні (днів) |
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ARRAYJ-BOB3-64P-GEVK | onsemi |
Description: J-ARRAY 3MM 8X8 BOB Packaging: Bulk Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: ArrayJ-300xx-64P, ArrayJ-40035-64P Supplied Contents: Board(s) Part Status: Active |
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ARRAYJ-BOB3-16P-GEVK | onsemi | Description: J-ARRAY 3MM 4X4 BOB |
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ARRAYX-BOB6-64S-GEVK | onsemi |
Description: C/J-ARRAY 6MM 8X8 SUM BOB Packaging: Bulk Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: ArrayJ-60035-64P Supplied Contents: Board(s) Part Status: Active |
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ARRAYJ-30020-16P-PCB | onsemi |
Description: SENSOR PHOTODIODE 420NM MODULE Packaging: Bulk Package / Case: Module Wavelength: 420nm Mounting Type: Socketable Active Area: 9mm² Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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AR1335CSSM32SMFAH3-GEVB | onsemi |
Description: BOARD EVAL 13 MP 1/3" CIS 32 DEG Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR1335CS Supplied Contents: Board(s) |
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NVMFWS3D0P04M8LT1G | onsemi |
Description: MV8 P INITIAL PROGRAM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V Power Dissipation (Max): 3.9W (Ta), 171W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V Qualification: AEC-Q101 |
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NVMFWS2D3P04M8LT1G | onsemi |
Description: MV8 P INITIAL PROGRAM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2.7mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS2D3P04M8LT1G | onsemi |
Description: MV8 P INITIAL PROGRAM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2.7mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V Qualification: AEC-Q101 |
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NVMFS3D0P04M8LT1G | onsemi |
Description: MV8 P INITIAL PROGRAM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V Power Dissipation (Max): 3.9W (Ta), 171W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V |
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NVTYS025P04M8LTWG | onsemi |
Description: MV8 40V P-CH LL IN LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 255µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
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NVMFWS014P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
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NVTYS9D6P04M8LTWG | onsemi |
Description: MV8 40V LL SINGLE PCH L Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 3.9W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 580µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V |
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NVMFS025P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 255µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V |
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NVMFWS025P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 255µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V Qualification: AEC-Q101 |
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NVMFS014P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVTYS014P04M8LTWG | onsemi |
Description: MV8 40V LL SINGLE PCH L Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 420µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V |
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SUR81560G | onsemi | Description: RECTIFIER DIODE, 1 PHASE, 15A, 6 |
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MBRD620CTT4G | onsemi |
Description: DIODE ARRAY SCHOTTKY 20V 3A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
на замовлення 10492 шт: термін постачання 21-31 дні (днів) |
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74F190PC | onsemi |
Description: IC DECADE COUNTER 4-BIT 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Counter, Decade Operating Temperature: 0°C ~ 70°C Direction: Up, Down Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-PDIP Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 4 |
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FFSPF2065A | onsemi |
Description: DIODE SIC 650V 20A TO220F-2FS Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1085pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220F-2FS Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 3685 шт: термін постачання 21-31 дні (днів) |
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FSA9688UCX | onsemi |
Description: FSA9688 - USB PORT MULTIMEDIA SW Packaging: Bulk Part Status: Active |
на замовлення 531000 шт: термін постачання 21-31 дні (днів) |
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NCP12700BDNR2G | onsemi | Description: IC OFFLINE SWITCH FLYBACK 10MSOP |
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NCP12700BDNR2G | onsemi | Description: IC OFFLINE SWITCH FLYBACK 10MSOP |
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NCP12700WIDEVINGEVB | onsemi | Description: NCP12700 16-160V EVALUATI |
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NCP12700BMTTXG | onsemi | Description: IC OFFLINE SWITCH FLYBACK 10WQFN |
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NCP12700BMTTXG | onsemi | Description: IC OFFLINE SWITCH FLYBACK 10WQFN |
товар відсутній |
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NCP12700ADNR2G | onsemi | Description: IC OFFLINE SWITCH FLYBACK 10MSOP |
товар відсутній |
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NCP12700ADNR2G | onsemi | Description: IC OFFLINE SWITCH FLYBACK 10MSOP |
на замовлення 727 шт: термін постачання 21-31 дні (днів) |
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FTD1011-TL-E | onsemi |
Description: PCH+PCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FTD2019S-TL-E | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 8970 шт: термін постачання 21-31 дні (днів) |
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FTD2015-TL-E | onsemi |
Description: NCH+NCH 4V DRIVE SERIES Packaging: Bulk |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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FTD2011A-TL-E | onsemi | Description: NCH+NCH 2.5V DRIVE SERIES |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FTD2017A-TL-E | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
товар відсутній |
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CPH5901F-TL-E | onsemi | Description: TRANS NPN/JFET N-CH 15V CPH5 |
товар відсутній |
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CPH5901F-TL-E | onsemi | Description: TRANS NPN/JFET N-CH 15V CPH5 |
на замовлення 65940 шт: термін постачання 21-31 дні (днів) |
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SCV2903DR2G | onsemi | Description: IC COMPARATOR 8-SOIC |
товар відсутній |
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2SA2127 | onsemi |
Description: TRANS PNP 50V 2A 3MP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 8930 шт: термін постачання 21-31 дні (днів) |
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LC05111C21MTTTG | onsemi |
Description: BATTERY PROTECTION CONTROLLER WI Packaging: Bulk Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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LC05111C14MTTTG | onsemi |
Description: BATTERY PROTECTION CONTROLLER WI Packaging: Bulk Part Status: Active |
товар відсутній |
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LC05111C18MTTTG | onsemi |
Description: IC BATT PROTECTION CTLR WDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 6-WDFN (4x2.6), Dual Flag Fault Protection: Over Current Part Status: Obsolete |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NL17SZ07MU2TCG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-UDFN (1.2x1) Part Status: Active |
товар відсутній |
DTC123EM3T5G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 3.27 грн |
16000+ | 2.68 грн |
24000+ | 2.52 грн |
56000+ | 2.22 грн |
DTC123EM3T5G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 21.76 грн |
16+ | 16.97 грн |
100+ | 8.98 грн |
500+ | 5.55 грн |
1000+ | 3.77 грн |
2000+ | 3.4 грн |
SZMMBZ20VALT3G |
Виробник: onsemi
Description: TVS DIODE 17VWM 28VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 17VWM 28VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1780000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.78 грн |
30000+ | 1.69 грн |
50000+ | 1.52 грн |
100000+ | 1.26 грн |
250000+ | 1.23 грн |
SZMMBZ20VALT3G |
Виробник: onsemi
Description: TVS DIODE 17VWM 28VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 17VWM 28VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1780000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.34 грн |
30+ | 9.13 грн |
100+ | 4.45 грн |
500+ | 3.48 грн |
1000+ | 2.42 грн |
2000+ | 2.1 грн |
5000+ | 1.91 грн |
NCP1253BSN65T1G |
Виробник: onsemi
Description: IC PWM CTLR OCP AUTO
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Open Loop, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Description: IC PWM CTLR OCP AUTO
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Open Loop, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Control Features: Frequency Control, Soft Start
Part Status: Active
товар відсутній
NL17SZ08MU1TCG |
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ08MU1TCG |
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
FDMS86369 |
Виробник: onsemi
Description: FET 80V 7.5MOHM PQFN8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (5.2x6.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Description: FET 80V 7.5MOHM PQFN8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (5.2x6.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
товар відсутній
NUS1204MNT1G |
Виробник: onsemi
Description: IC OVP W/P-CH MOSFET WDFN6 2X2
Description: IC OVP W/P-CH MOSFET WDFN6 2X2
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1312+ | 16.3 грн |
KSC2330YTA |
Виробник: onsemi
Description: TRANS NPN 300V 0.1A TO92-3
Description: TRANS NPN 300V 0.1A TO92-3
на замовлення 61302 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4121+ | 4.63 грн |
CAT808NTDI-27GT3 |
Виробник: onsemi
Description: IC VOLT DETECT LP PREC TSOT23-5
Description: IC VOLT DETECT LP PREC TSOT23-5
на замовлення 34339 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1312+ | 15.34 грн |
CAT808NTDI-32GT3 |
Виробник: onsemi
Description: IC VOLT DETECT LP PREC TSOT23-5
Description: IC VOLT DETECT LP PREC TSOT23-5
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1312+ | 15.34 грн |
NSVDTC144WET1G |
Виробник: onsemi
Description: NSVDTC144 - BIAS RESISTOR TRANSI
Description: NSVDTC144 - BIAS RESISTOR TRANSI
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7212+ | 2.75 грн |
NCP51200AMNTXG |
Виробник: onsemi
Description: 3A DDR / VTT TERMINATION
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Voltage - Output: 1.8V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 2.375V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: LDO (Linear), DDR
Supplier Device Package: 10-DFN (3x3)
Part Status: Active
Description: 3A DDR / VTT TERMINATION
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Voltage - Output: 1.8V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 2.375V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: LDO (Linear), DDR
Supplier Device Package: 10-DFN (3x3)
Part Status: Active
товар відсутній
NCP4371AADDR2G |
Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
Description: IC BATT CHG 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1042+ | 20.36 грн |
NCV86601BDT50RKG |
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA DPAK-5
Description: IC REG LINEAR 5V 150MA DPAK-5
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
320+ | 64.69 грн |
FDC6561AN-NB5S007A |
Виробник: onsemi
Description: FET 30V 95.0 MOHM SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: FET 30V 95.0 MOHM SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
на замовлення 22283 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
455+ | 77.21 грн |
ARRAYJ-BOB3-64P-GEVK |
Виробник: onsemi
Description: J-ARRAY 3MM 8X8 BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayJ-300xx-64P, ArrayJ-40035-64P
Supplied Contents: Board(s)
Part Status: Active
Description: J-ARRAY 3MM 8X8 BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayJ-300xx-64P, ArrayJ-40035-64P
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
ARRAYX-BOB6-64S-GEVK |
Виробник: onsemi
Description: C/J-ARRAY 6MM 8X8 SUM BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayJ-60035-64P
Supplied Contents: Board(s)
Part Status: Active
Description: C/J-ARRAY 6MM 8X8 SUM BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayJ-60035-64P
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
ARRAYJ-30020-16P-PCB |
Виробник: onsemi
Description: SENSOR PHOTODIODE 420NM MODULE
Packaging: Bulk
Package / Case: Module
Wavelength: 420nm
Mounting Type: Socketable
Active Area: 9mm²
Part Status: Active
Description: SENSOR PHOTODIODE 420NM MODULE
Packaging: Bulk
Package / Case: Module
Wavelength: 420nm
Mounting Type: Socketable
Active Area: 9mm²
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 46853.71 грн |
AR1335CSSM32SMFAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 13 MP 1/3" CIS 32 DEG
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1335CS
Supplied Contents: Board(s)
Description: BOARD EVAL 13 MP 1/3" CIS 32 DEG
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR1335CS
Supplied Contents: Board(s)
товар відсутній
NVMFWS3D0P04M8LT1G |
Виробник: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVMFWS2D3P04M8LT1G |
Виробник: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 110.51 грн |
NVMFS2D3P04M8LT1G |
Виробник: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVMFS3D0P04M8LT1G |
Виробник: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
товар відсутній
NVTYS025P04M8LTWG |
Виробник: onsemi
Description: MV8 40V P-CH LL IN LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 255µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MV8 40V P-CH LL IN LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 255µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
NVMFWS014P04M8LT1G |
Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVTYS9D6P04M8LTWG |
Виробник: onsemi
Description: MV8 40V LL SINGLE PCH L
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 3.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 580µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V
Description: MV8 40V LL SINGLE PCH L
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 3.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 580µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V
товар відсутній
NVMFS025P04M8LT1G |
Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
товар відсутній
NVMFWS025P04M8LT1G |
Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVMFS014P04M8LT1G |
Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 28.27 грн |
3000+ | 25.63 грн |
NVTYS014P04M8LTWG |
Виробник: onsemi
Description: MV8 40V LL SINGLE PCH L
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 420µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V
Description: MV8 40V LL SINGLE PCH L
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 420µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V
товар відсутній
MBRD620CTT4G |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE ARRAY SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
на замовлення 10492 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
942+ | 21.07 грн |
74F190PC |
Виробник: onsemi
Description: IC DECADE COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Counter, Decade
Operating Temperature: 0°C ~ 70°C
Direction: Up, Down
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
Description: IC DECADE COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Counter, Decade
Operating Temperature: 0°C ~ 70°C
Direction: Up, Down
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
товар відсутній
FFSPF2065A |
Виробник: onsemi
Description: DIODE SIC 650V 20A TO220F-2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIC 650V 20A TO220F-2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 3685 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 768.61 грн |
10+ | 633.89 грн |
100+ | 528.25 грн |
500+ | 437.41 грн |
FSA9688UCX |
на замовлення 531000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
533+ | 39.31 грн |
NCP12700ADNR2G |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10MSOP
Description: IC OFFLINE SWITCH FLYBACK 10MSOP
на замовлення 727 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.4 грн |
10+ | 92.4 грн |
25+ | 87.71 грн |
100+ | 67.62 грн |
250+ | 63.21 грн |
500+ | 55.86 грн |
FTD1011-TL-E |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
423+ | 45.55 грн |
FTD2019S-TL-E |
на замовлення 8970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
592+ | 35.8 грн |
FTD2015-TL-E |
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
513+ | 41.41 грн |
FTD2011A-TL-E |
Виробник: onsemi
Description: NCH+NCH 2.5V DRIVE SERIES
Description: NCH+NCH 2.5V DRIVE SERIES
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
760+ | 27.08 грн |
CPH5901F-TL-E |
Виробник: onsemi
Description: TRANS NPN/JFET N-CH 15V CPH5
Description: TRANS NPN/JFET N-CH 15V CPH5
на замовлення 65940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2652+ | 7.06 грн |
2SA2127 |
Виробник: onsemi
Description: TRANS PNP 50V 2A 3MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 2A 3MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 8930 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1567+ | 12.19 грн |
LC05111C21MTTTG |
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
396+ | 48.64 грн |
LC05111C14MTTTG |
товар відсутній
LC05111C18MTTTG |
Виробник: onsemi
Description: IC BATT PROTECTION CTLR WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Part Status: Obsolete
Description: IC BATT PROTECTION CTLR WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Fault Protection: Over Current
Part Status: Obsolete
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
582+ | 56.62 грн |
NL17SZ07MU2TCG |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1.2x1)
Part Status: Active
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1.2x1)
Part Status: Active
товар відсутній