Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102927) > Сторінка 790 з 1716
Фото | Назва | Виробник | Інформація |
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RSX071VYM30FHTR | Rohm Semiconductor |
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на замовлення 2829 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB520CS-30FHT2RA | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5360 шт: термін постачання 21-31 дні (днів) |
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RSJ250P10FRATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2410 шт: термін постачання 21-31 дні (днів) |
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RSX101VYM30FHTR | Rohm Semiconductor |
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на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD50C0AFP-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4482 шт: термін постачання 21-31 дні (днів) |
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BD50GC0MEFJ-ME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 428 шт: термін постачання 21-31 дні (днів) |
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BR24A02FVM-WMTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 256 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 577 шт: термін постачання 21-31 дні (днів) |
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DA228KFHT146 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SMD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 |
на замовлення 1702 шт: термін постачання 21-31 дні (днів) |
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RFN10BM3SFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4195 шт: термін постачання 21-31 дні (днів) |
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RFN6BM2DFHTL | Rohm Semiconductor |
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на замовлення 362 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB095BM-60FHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3882 шт: термін постачання 21-31 дні (днів) |
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RF505BM6SFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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BD80C0AFP-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 8V Grade: Automotive PSRR: 50dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Qualification: AEC-Q100 |
на замовлення 1730 шт: термін постачання 21-31 дні (днів) |
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DAN222WMFHTL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24A01AF-WME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 128 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1081 шт: термін постачання 21-31 дні (днів) |
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BR24A02F-WME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 256 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR24A04F-WME2 | Rohm Semiconductor |
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на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DAP222WMFHTL | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DAN222MFHT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: VMD3 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6939 шт: термін постачання 21-31 дні (днів) |
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RSL020P03FRATR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13456 шт: термін постачання 21-31 дні (днів) |
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DAP222MFHT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: VMD3 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3845 шт: термін постачання 21-31 дні (днів) |
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RFN10BM6SFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2504 шт: термін постачання 21-31 дні (днів) |
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RFN10NS6SFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 169pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
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RHU003N03FRAT106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1655 шт: термін постачання 21-31 дні (днів) |
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SP8M24FRATB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M4FRATB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M5FRATB | Rohm Semiconductor |
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на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
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SP8M6FRATB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB095BM-40FHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11.4 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 251 шт: термін постачання 21-31 дні (днів) |
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RJ1U330AAFRGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
на замовлення 244 шт: термін постачання 21-31 дні (днів) |
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SP8K32FRATB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K33FRATB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K52FRATB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
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SP8M21FRATB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RJK005N03FRAT146 | Rohm Semiconductor |
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на замовлення 3878 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RSS070P05FRATB | Rohm Semiconductor |
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на замовлення 1820 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RSS100N03FRATB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2261 шт: термін постачання 21-31 дні (днів) |
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BD90C0AWFP-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252-5 Voltage - Output (Min/Fixed): 9V Control Features: Enable Part Status: Active PSRR: 50dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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BR24A01AFJ-WME2 | Rohm Semiconductor |
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на замовлення 2293 шт: термін постачання 21-31 дні (днів) |
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BR25H640F-2ACE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 957 шт: термін постачання 21-31 дні (днів) |
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DAN217UMFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB085BM-90FHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.4 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
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RB168VYM150FHTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.8 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8251 шт: термін постачання 21-31 дні (днів) |
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RB218NS150FHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14.8 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 150 V |
на замовлення 11744 шт: термін постачання 21-31 дні (днів) |
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RR601BM4SFHTL | Rohm Semiconductor |
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на замовлення 1229 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RUC002N05HZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 85535 шт: термін постачання 21-31 дні (днів) |
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RUF025N02FRATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2877 шт: термін постачання 21-31 дні (днів) |
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SP8K22FRATB | Rohm Semiconductor |
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на замовлення 2442 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K24FRATB | Rohm Semiconductor |
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на замовлення 2349 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K31FRATB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DAN202UMFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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RF2001NS2DFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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RB050LAM-60TFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26.35 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 12659 шт: термін постачання 21-31 дні (днів) |
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RB085BM-40FHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.3 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6381 шт: термін постачання 21-31 дні (днів) |
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RB160VYM-60FHTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6.65 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Current - Reverse Leakage @ Vr: 40 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ20BM45AFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2081 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS45AFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 771 шт: термін постачання 21-31 дні (днів) |
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RF501BM2SFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4666 шт: термін постачання 21-31 дні (днів) |
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RK7002BMHZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22968 шт: термін постачання 21-31 дні (днів) |
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RRL025P03FRATR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 815 шт: термін постачання 21-31 дні (днів) |
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RSX071VYM30FHTR |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
на замовлення 2829 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RB520CS-30FHT2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.63 грн |
20+ | 15.62 грн |
100+ | 10.05 грн |
500+ | 7.45 грн |
1000+ | 6.10 грн |
2000+ | 5.83 грн |
RSJ250P10FRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 155.73 грн |
10+ | 108.00 грн |
100+ | 78.94 грн |
500+ | 59.55 грн |
RSX101VYM30FHTR |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BD50C0AFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4482 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 89.57 грн |
10+ | 62.39 грн |
25+ | 56.47 грн |
100+ | 46.87 грн |
250+ | 43.94 грн |
500+ | 42.18 грн |
1000+ | 40.06 грн |
BD50GC0MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 428 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 138.79 грн |
10+ | 85.08 грн |
25+ | 72.26 грн |
100+ | 54.27 грн |
250+ | 47.66 грн |
BR24A02FVM-WMTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 577 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 48.41 грн |
10+ | 42.27 грн |
25+ | 41.74 грн |
50+ | 38.92 грн |
100+ | 34.79 грн |
250+ | 34.50 грн |
500+ | 33.43 грн |
DA228KFHT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
на замовлення 1702 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.01 грн |
21+ | 15.38 грн |
100+ | 8.31 грн |
500+ | 6.92 грн |
1000+ | 6.46 грн |
RFN10BM3SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 350V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4195 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 121.84 грн |
10+ | 74.20 грн |
100+ | 51.99 грн |
500+ | 38.41 грн |
1000+ | 35.08 грн |
RFN6BM2DFHTL |
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Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE (AEC-Q
Description: SUPER FAST RECOVERY DIODE (AEC-Q
на замовлення 362 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RB095BM-60FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.01 грн |
10+ | 55.94 грн |
100+ | 43.51 грн |
500+ | 34.61 грн |
1000+ | 28.20 грн |
RF505BM6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 116.19 грн |
10+ | 100.08 грн |
BD80C0AFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 8V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 8V
Grade: Automotive
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 8V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 8V
Grade: Automotive
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Qualification: AEC-Q100
на замовлення 1730 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 102.48 грн |
10+ | 88.50 грн |
25+ | 84.01 грн |
100+ | 64.75 грн |
250+ | 60.53 грн |
500+ | 53.49 грн |
1000+ | 41.54 грн |
DAN222WMFHTL |
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Виробник: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
Description: SWITCHING DIODES (CORRESPONDS TO
товару немає в наявності
В кошику
од. на суму грн.
BR24A01AF-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 40.34 грн |
10+ | 36.13 грн |
25+ | 35.25 грн |
50+ | 32.38 грн |
100+ | 31.66 грн |
250+ | 30.73 грн |
500+ | 29.53 грн |
1000+ | 28.83 грн |
BR24A02F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BR24A04F-WME2 |
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Виробник: Rohm Semiconductor
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
DAP222WMFHTL |
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Виробник: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
Description: SWITCHING DIODES (CORRESPONDS TO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
DAN222MFHT2L |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6939 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.79 грн |
25+ | 12.59 грн |
100+ | 7.88 грн |
500+ | 5.45 грн |
1000+ | 4.82 грн |
2000+ | 4.29 грн |
RSL020P03FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13456 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.81 грн |
10+ | 43.36 грн |
100+ | 28.21 грн |
500+ | 20.37 грн |
1000+ | 18.41 грн |
DAP222MFHT2L |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA VMD3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VMD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3845 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.24 грн |
19+ | 16.63 грн |
100+ | 10.44 грн |
500+ | 7.28 грн |
1000+ | 6.47 грн |
2000+ | 5.78 грн |
RFN10BM6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 154.12 грн |
10+ | 94.64 грн |
100+ | 65.22 грн |
500+ | 48.64 грн |
1000+ | 44.60 грн |
RFN10NS6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 860 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 152.50 грн |
10+ | 99.92 грн |
100+ | 67.98 грн |
500+ | 50.78 грн |
RHU003N03FRAT106 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1655 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.98 грн |
25+ | 12.59 грн |
100+ | 7.86 грн |
500+ | 5.45 грн |
1000+ | 4.82 грн |
SP8M24FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
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SP8M4FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
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SP8M5FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET
Description: 4V DRIVE NCH+PCH MOSFET
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 160.57 грн |
10+ | 138.70 грн |
100+ | 111.43 грн |
500+ | 85.92 грн |
1000+ | 71.19 грн |
SP8M6FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 5A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
RB095BM-40FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 251 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.01 грн |
10+ | 58.98 грн |
100+ | 40.83 грн |
RJ1U330AAFRGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 330.83 грн |
10+ | 286.25 грн |
100+ | 234.50 грн |
SP8K32FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
SP8K33FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
SP8K52FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 75.85 грн |
10+ | 59.67 грн |
100+ | 46.40 грн |
500+ | 36.90 грн |
1000+ | 30.06 грн |
SP8M21FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
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од. на суму грн.
RJK005N03FRAT146 |
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Виробник: Rohm Semiconductor
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
на замовлення 3878 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RSS070P05FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Description: MOSFET P-CH 45V 7A 8SOP
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RSS100N03FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2261 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.06 грн |
10+ | 65.11 грн |
100+ | 43.78 грн |
500+ | 32.18 грн |
1000+ | 29.31 грн |
BD90C0AWFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Active
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 9V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Active
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 121.03 грн |
10+ | 103.65 грн |
BR24A01AFJ-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
на замовлення 2293 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 45.99 грн |
10+ | 43.59 грн |
25+ | 40.50 грн |
50+ | 37.82 грн |
100+ | 33.58 грн |
250+ | 33.16 грн |
500+ | 32.12 грн |
1000+ | 31.26 грн |
BR25H640F-2ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 957 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.16 грн |
10+ | 97.90 грн |
25+ | 95.23 грн |
50+ | 88.90 грн |
100+ | 79.48 грн |
250+ | 79.25 грн |
500+ | 76.77 грн |
DAN217UMFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RB085BM-90FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 90V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 158.96 грн |
10+ | 97.67 грн |
100+ | 66.33 грн |
500+ | 49.60 грн |
1000+ | 45.53 грн |
RB168VYM150FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8251 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 45.99 грн |
10+ | 33.49 грн |
100+ | 23.04 грн |
500+ | 16.54 грн |
1000+ | 14.90 грн |
RB218NS150FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 150V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14.8 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Description: DIODE ARR SCHOTT 150V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14.8 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
на замовлення 11744 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 113.77 грн |
10+ | 91.38 грн |
100+ | 72.72 грн |
500+ | 57.75 грн |
RR601BM4SFHTL |
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Виробник: Rohm Semiconductor
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Description: RECTIFYING DIODE (AEC-Q101 QUALI
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RUC002N05HZGT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 85535 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.52 грн |
36+ | 8.78 грн |
100+ | 5.44 грн |
500+ | 3.73 грн |
1000+ | 3.28 грн |
RUF025N02FRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2877 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.61 грн |
11+ | 29.22 грн |
100+ | 18.97 грн |
500+ | 13.82 грн |
1000+ | 12.40 грн |
SP8K22FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
на замовлення 2442 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SP8K24FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SP8K31FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
DAN202UMFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.75 грн |
30+ | 10.57 грн |
100+ | 6.58 грн |
500+ | 4.53 грн |
1000+ | 3.99 грн |
RF2001NS2DFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 254.17 грн |
10+ | 159.44 грн |
100+ | 110.80 грн |
RB050LAM-60TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26.35 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26.35 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
на замовлення 12659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.61 грн |
10+ | 37.30 грн |
100+ | 30.40 грн |
500+ | 21.69 грн |
1000+ | 19.30 грн |
RB085BM-40FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6381 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 134.75 грн |
10+ | 82.60 грн |
100+ | 55.61 грн |
500+ | 41.30 грн |
1000+ | 37.79 грн |
RB160VYM-60FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.65 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.65 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
RBQ20BM45AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 45V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2081 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 92.79 грн |
10+ | 72.96 грн |
100+ | 56.76 грн |
500+ | 45.15 грн |
1000+ | 36.78 грн |
RBQ30NS45AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
на замовлення 771 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.70 грн |
10+ | 100.00 грн |
100+ | 76.57 грн |
500+ | 57.50 грн |
RF501BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4666 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.34 грн |
10+ | 68.30 грн |
100+ | 53.11 грн |
500+ | 42.25 грн |
1000+ | 34.42 грн |
RK7002BMHZGT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22968 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.52 грн |
38+ | 8.39 грн |
100+ | 5.21 грн |
500+ | 3.57 грн |
1000+ | 3.09 грн |
RRL025P03FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 815 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 58.10 грн |
10+ | 34.58 грн |
100+ | 22.28 грн |
500+ | 15.93 грн |