Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104132) > Сторінка 791 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MSL0601RGBU1 | Rohm Semiconductor |
Description: LED RGB SIDE SMD R/APackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Red, Green, Blue (RGB) Size / Dimension: 2.90mm L x 1.35mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue Configuration: Common Anode Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue Lens Color: White Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 1.10mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: SMD Lens Style: Rectangle with Flat Top Lens Size: 2.90mm x 1.35mm |
на замовлення 8573 шт: термін постачання 21-31 дні (днів) |
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SML-D12D8WT86C | Rohm Semiconductor |
Description: LED ORANGE CLEAR 1608 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 100mcd Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 10mA Height (Max): 0.65mm Wavelength - Dominant: 605nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm Grade: Automotive Qualification: AEC-Q102 |
на замовлення 4381 шт: термін постачання 21-31 дні (днів) |
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SML-D13WWT86C | Rohm Semiconductor |
Description: LED YELLOW CLEAR 1608 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 110mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Viewing Angle: 160° Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Grade: Automotive Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm Qualification: AEC-Q102 |
на замовлення 1570 шт: термін постачання 21-31 дні (днів) |
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BAS116HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BAS16HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAV199HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BAV70HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 215mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BAV99HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Voltage Coupled to Current - Reverse Leakage @ Vr: 80 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 215mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAS116HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16HMFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3567 шт: термін постачання 21-31 дні (днів) |
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BAV199HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV99HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Current - Reverse Leakage @ Vr: 100 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Voltage Coupled to Current - Reverse Leakage @ Vr: 80 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 215mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 3863 шт: термін постачання 21-31 дні (днів) |
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LMR1802G-LBTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 5SSOPGain Bandwidth Product: 3 MHz Slew Rate: 1.1V/µs Current - Supply: 1.1mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 1 Supplier Device Package: 5-SSOP Voltage - Input Offset: 5 µV Current - Input Bias: 0.5 pA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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LMR1802G-LBTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 5SSOPVoltage - Input Offset: 5 µV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 3 MHz Slew Rate: 1.1V/µs Current - Supply: 1.1mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 1 Supplier Device Package: 5-SSOP |
на замовлення 2992 шт: термін постачання 21-31 дні (днів) |
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RB095BGE-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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RB095BGE-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 2393 шт: термін постачання 21-31 дні (днів) |
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RB095BGE-40TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 1258 шт: термін постачання 21-31 дні (днів) |
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RB095BGE-60TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 6A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
на замовлення 499 шт: термін постачання 21-31 дні (днів) |
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RB095BGE-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 6A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 4798 шт: термін постачання 21-31 дні (днів) |
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RGTV00TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 95A TO247NPower - Max: 276 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 95 A Gate Charge: 104 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.17mJ (on), 940µJ (off) Td (on/off) @ 25°C: 41ns/142ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Reverse Recovery Time (trr): 102 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGTV60TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 60A TO247NPower - Max: 194 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 64 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 570µJ (on), 500µJ (off) Td (on/off) @ 25°C: 33ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Reverse Recovery Time (trr): 95 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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RGTV60TS65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 60A TO-247NPower - Max: 194 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 64 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 570µJ (on), 500µJ (off) Td (on/off) @ 25°C: 33ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
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RGW00TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 45A TO-3PFMOperating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube Power - Max: 89 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 45 A Part Status: Active Gate Charge: 141 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.18mJ (on), 960µJ (off) Td (on/off) @ 25°C: 52ns/180ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Reverse Recovery Time (trr): 95 ns Input Type: Standard |
на замовлення 425 шт: термін постачання 21-31 дні (днів) |
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RGW00TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 45A TO3PFMPower - Max: 89 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 45 A Part Status: Active Gate Charge: 141 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.18mJ (on), 960µJ (off) Td (on/off) @ 25°C: 52ns/180ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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RGW00TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGW00TS65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N |
на замовлення 439 шт: термін постачання 21-31 дні (днів) |
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RGW60TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 60A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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RGW60TS65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 60A TO247NPower - Max: 178 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 84 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 480µJ (on), 490µJ (off) Td (on/off) @ 25°C: 37ns/114ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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RGW80TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 39A TO3PFMPower - Max: 81 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 39 A Part Status: Active Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Reverse Recovery Time (trr): 92 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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RGW80TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 39A TO-3PFMPower - Max: 81 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 39 A Part Status: Active Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
на замовлення 449 шт: термін постачання 21-31 дні (днів) |
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RGW80TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 78A TO247NPower - Max: 214 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 78 A Part Status: Not For New Designs Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Reverse Recovery Time (trr): 92 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 314 шт: термін постачання 21-31 дні (днів) |
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RGW80TS65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 78A TO247NPower - Max: 214 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 78 A Part Status: Not For New Designs Gate Charge: 110 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 760µJ (on), 720µJ (off) Td (on/off) @ 25°C: 44ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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BH1726NUC-E2 | Rohm Semiconductor |
Description: SENSOR OPT AMBIENT 8 UFDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Output Type: I2C Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Supplier Device Package: WSON008X2120 Proximity Detection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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BU52792GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARTest Condition: 25°C Current - Supply (Max): 6µA Current - Output (Max): 500µA Sensing Range: ±3.2mT Trip, ±1.2mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C Function: Omnipolar Switch Mounting Type: Surface Mount Polarization: North Pole, South Pole Output Type: CMOS Package / Case: 4-XFBGA, CSPBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BH1726NUC-E2 | Rohm Semiconductor |
Description: SENSOR OPT AMBIENT 8 UFDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Output Type: I2C Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Supplier Device Package: WSON008X2120 Proximity Detection: No Part Status: Active |
на замовлення 5455 шт: термін постачання 21-31 дні (днів) |
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BU52792GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARTest Condition: 25°C Current - Supply (Max): 6µA Current - Output (Max): 500µA Sensing Range: ±3.2mT Trip, ±1.2mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C Function: Omnipolar Switch Mounting Type: Surface Mount Polarization: North Pole, South Pole Output Type: CMOS Package / Case: 4-XFBGA, CSPBGA Packaging: Cut Tape (CT) |
на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
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ROHM-STEPMO_EVK_206 | Rohm Semiconductor |
Description: BD63720A STEPMOTOR DRVR SHIELDPackaging: Box Function: Motor Controller/Driver, Stepper Type: Power Management Contents: Board(s) Utilized IC / Part: BD63720A Platform: Arduino Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS230KE2AHRC | Rohm Semiconductor | Description: DIODE ARRAY SCHOTTKY 1200V TO247 |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||||
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SCS240KE2AHRC | Rohm Semiconductor |
Description: DIODE ARRAY SIC 1200V 20A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||||
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SCS310AMC | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 10A TO220FMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 215 шт: термін постачання 21-31 дні (днів) |
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SCS312AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 12A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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SCS315AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 15A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
на замовлення 392 шт: термін постачання 21-31 дні (днів) |
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SCS320AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6003KND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 3A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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R6003KND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 3A TO252Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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2SA2088U3T106 | Rohm Semiconductor |
Description: TRANS PNP 60V 0.5A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 400MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA115EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTA123EU3T106 | Rohm Semiconductor |
Description: DTA123EU3 IS AN DIGITAL TRANSISTResistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTA123YU3T106 | Rohm Semiconductor |
Description: DTA123YU3 IS AN DIGITAL TRANSISTCurrent - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTC113ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Resistors Included: R1 and R2 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTC115GU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Resistor - Emitter Base (R2): 100 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC123YU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC143EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DTC143XU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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2SA2088U3T106 | Rohm Semiconductor |
Description: TRANS PNP 60V 0.5A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 400MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 mW |
на замовлення 7918 шт: термін постачання 21-31 дні (днів) |
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DTA113ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 6992 шт: термін постачання 21-31 дні (днів) |
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DTA115EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms Resistors Included: R1 and R2 |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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DTA123EU3T106 | Rohm Semiconductor |
Description: DTA123EU3 IS AN DIGITAL TRANSISTResistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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DTA123YU3T106 | Rohm Semiconductor |
Description: DTA123YU3 IS AN DIGITAL TRANSISTPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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| MSL0601RGBU1 |
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Виробник: Rohm Semiconductor
Description: LED RGB SIDE SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 2.90mm L x 1.35mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 1.10mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: SMD
Lens Style: Rectangle with Flat Top
Lens Size: 2.90mm x 1.35mm
Description: LED RGB SIDE SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 2.90mm L x 1.35mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 700mcd Red, 1250mcd Green, 360mcd Blue
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.3V Green, 3.2V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 1.10mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: SMD
Lens Style: Rectangle with Flat Top
Lens Size: 2.90mm x 1.35mm
на замовлення 8573 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.76 грн |
| 10+ | 67.33 грн |
| 100+ | 50.53 грн |
| 500+ | 40.44 грн |
| 1000+ | 38.16 грн |
| SML-D12D8WT86C |
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Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 0.65mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Grade: Automotive
Qualification: AEC-Q102
Description: LED ORANGE CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 0.65mm
Wavelength - Dominant: 605nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Grade: Automotive
Qualification: AEC-Q102
на замовлення 4381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 32+ | 9.59 грн |
| 100+ | 6.73 грн |
| 500+ | 5.06 грн |
| 1000+ | 4.64 грн |
| SML-D13WWT86C |
![]() |
Виробник: Rohm Semiconductor
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 160°
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Grade: Automotive
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Qualification: AEC-Q102
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 160°
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Grade: Automotive
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Qualification: AEC-Q102
на замовлення 1570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.00 грн |
| 16+ | 19.32 грн |
| 100+ | 13.81 грн |
| 500+ | 10.62 грн |
| 1000+ | 9.85 грн |
| BAS116HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS16HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.72 грн |
| BAV199HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAV70HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAV99HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARRAY GP 80V 215MA SSD3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.37 грн |
| BAS116HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BAS16HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 39+ | 7.93 грн |
| 100+ | 4.94 грн |
| 500+ | 3.38 грн |
| 1000+ | 2.97 грн |
| BAV199HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BAV99HMFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 3863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 38+ | 8.15 грн |
| 100+ | 5.06 грн |
| 500+ | 3.47 грн |
| LMR1802G-LBTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 5SSOP
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
Description: IC CMOS 1 CIRCUIT 5SSOP
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| LMR1802G-LBTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 5SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
Description: IC CMOS 1 CIRCUIT 5SSOP
Voltage - Input Offset: 5 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 3 MHz
Slew Rate: 1.1V/µs
Current - Supply: 1.1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Supplier Device Package: 5-SSOP
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 509.48 грн |
| 10+ | 325.16 грн |
| 25+ | 282.05 грн |
| 100+ | 218.95 грн |
| 250+ | 196.50 грн |
| 500+ | 183.49 грн |
| RB095BGE-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB095BGE-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 2393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.73 грн |
| 10+ | 64.08 грн |
| 100+ | 49.82 грн |
| 500+ | 39.63 грн |
| 1000+ | 32.28 грн |
| RB095BGE-40TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 1258 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.54 грн |
| 10+ | 55.33 грн |
| 100+ | 43.02 грн |
| 500+ | 34.22 грн |
| 1000+ | 27.88 грн |
| RB095BGE-60TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.27 грн |
| 10+ | 57.36 грн |
| 100+ | 42.53 грн |
| RB095BGE-90TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 4798 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.41 грн |
| 10+ | 56.91 грн |
| 100+ | 39.08 грн |
| 500+ | 28.70 грн |
| 1000+ | 26.14 грн |
| RGTV00TS65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 95A TO247N
Power - Max: 276 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 95 A
Gate Charge: 104 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.17mJ (on), 940µJ (off)
Td (on/off) @ 25°C: 41ns/142ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 102 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 95A TO247N
Power - Max: 276 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 95 A
Gate Charge: 104 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.17mJ (on), 940µJ (off)
Td (on/off) @ 25°C: 41ns/142ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 102 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| RGTV60TS65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| RGTV60TS65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 60A TO-247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 60A TO-247N
Power - Max: 194 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 64 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 570µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 33ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.85 грн |
| 30+ | 109.90 грн |
| 120+ | 89.21 грн |
| RGW00TK65DGVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 434.23 грн |
| 30+ | 259.07 грн |
| RGW00TK65GVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Power - Max: 89 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 960µJ (off)
Td (on/off) @ 25°C: 52ns/180ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| RGW00TS65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Description: IGBT TRNCH FIELD 650V 96A TO247N
товару немає в наявності
В кошику
од. на суму грн.
| RGW00TS65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Description: IGBT TRNCH FIELD 650V 96A TO247N
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.34 грн |
| 10+ | 387.58 грн |
| 100+ | 317.55 грн |
| RGW60TS65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRENCH FS 650V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.58 грн |
| 30+ | 206.08 грн |
| 120+ | 171.15 грн |
| RGW60TS65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 84 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 480µJ (on), 490µJ (off)
Td (on/off) @ 25°C: 37ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 60A TO247N
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 84 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 480µJ (on), 490µJ (off)
Td (on/off) @ 25°C: 37ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.58 грн |
| 30+ | 159.16 грн |
| 120+ | 153.55 грн |
| RGW80TK65DGVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 317.44 грн |
| 30+ | 243.92 грн |
| 120+ | 226.03 грн |
| RGW80TK65GVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Power - Max: 81 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
на замовлення 449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.20 грн |
| 30+ | 142.63 грн |
| 120+ | 116.41 грн |
| RGW80TS65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 500.86 грн |
| 30+ | 277.33 грн |
| 120+ | 232.12 грн |
| RGW80TS65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 78A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Part Status: Not For New Designs
Gate Charge: 110 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 760µJ (on), 720µJ (off)
Td (on/off) @ 25°C: 44ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.04 грн |
| 30+ | 168.32 грн |
| 120+ | 164.57 грн |
| BH1726NUC-E2 |
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Виробник: Rohm Semiconductor
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
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| BU52792GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BH1726NUC-E2 |
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Виробник: Rohm Semiconductor
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
Description: SENSOR OPT AMBIENT 8 UFDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
на замовлення 5455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.14 грн |
| 5+ | 126.65 грн |
| 10+ | 120.69 грн |
| 25+ | 106.65 грн |
| 50+ | 102.16 грн |
| 100+ | 98.03 грн |
| 500+ | 88.26 грн |
| 1000+ | 85.23 грн |
| BU52792GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH OMNIPOLAR
Test Condition: 25°C
Current - Supply (Max): 6µA
Current - Output (Max): 500µA
Sensing Range: ±3.2mT Trip, ±1.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: CMOS
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.27 грн |
| 11+ | 28.08 грн |
| 25+ | 24.59 грн |
| 50+ | 23.36 грн |
| 100+ | 22.25 грн |
| 500+ | 19.69 грн |
| 1000+ | 18.87 грн |
| ROHM-STEPMO_EVK_206 |
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Виробник: Rohm Semiconductor
Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SCS230KE2AHRC |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Description: DIODE ARRAY SCHOTTKY 1200V TO247
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SCS240KE2AHRC |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE ARRAY SIC 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SCS310AMC |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 546.32 грн |
| 50+ | 282.83 грн |
| 100+ | 259.40 грн |
| SCS312AHGC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 318.23 грн |
| SCS315AHGC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 579.24 грн |
| 50+ | 444.81 грн |
| 100+ | 398.00 грн |
| SCS320AHGC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
товару немає в наявності
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| R6003KND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| R6003KND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.49 грн |
| 10+ | 111.18 грн |
| 2SA2088U3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.25 грн |
| 6000+ | 5.45 грн |
| DTA113ZU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.44 грн |
| DTA115EU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| DTA123EU3T106 |
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Виробник: Rohm Semiconductor
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| DTA123YU3T106 |
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Виробник: Rohm Semiconductor
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC113ZU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Resistors Included: R1 and R2
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Resistors Included: R1 and R2
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC115GU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.45 грн |
| DTC123YU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.61 грн |
| DTC143EU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.61 грн |
| 6000+ | 2.24 грн |
| 9000+ | 2.11 грн |
| 15000+ | 1.83 грн |
| 21000+ | 1.74 грн |
| 30000+ | 1.66 грн |
| DTC143XU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 2SA2088U3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
на замовлення 7918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.00 грн |
| 18+ | 17.13 грн |
| 100+ | 10.79 грн |
| 500+ | 7.54 грн |
| 1000+ | 6.71 грн |
| DTA113ZU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.76 грн |
| 42+ | 7.25 грн |
| 100+ | 4.46 грн |
| 500+ | 3.05 грн |
| 1000+ | 2.68 грн |
| DTA115EU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.76 грн |
| 42+ | 7.32 грн |
| 100+ | 4.51 грн |
| DTA123EU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 25+ | 12.53 грн |
| 100+ | 6.65 грн |
| DTA123YU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 25+ | 12.53 грн |
| 100+ | 6.65 грн |





















