Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102266) > Сторінка 890 з 1705
Фото | Назва | Виробник | Інформація |
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DTA123JMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA123JMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
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DTA143XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA143XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
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DTC124XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC124XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 7630 шт: термін постачання 21-31 дні (днів) |
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DTC123ECAT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123ECAT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
на замовлення 2912 шт: термін постачання 21-31 дні (днів) |
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SP8M4HZGTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SP8M4HZGTB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 1968 шт: термін постачання 21-31 дні (днів) |
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TFZGTR18B | Rohm Semiconductor | Description: DIODE ZENER 18V 500MW TUMD2 |
на замовлення 101 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B6V2LYFHT116 | Rohm Semiconductor |
![]() Tolerance: ±1.94% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B6V2LYFHT116 | Rohm Semiconductor |
![]() Tolerance: ±1.94% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
на замовлення 2719 шт: термін постачання 21-31 дні (днів) |
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BD60910GU-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VFBGA, CSPBGA Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25.6mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: VCSP85H3 Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR03EZPF4301 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±1% Features: Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 4.3 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P02SCT3040KR-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR SCT3040KR Packaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Utilized IC / Part: SCT3040KR Supplied Contents: Board(s) Primary Attributes: Overvoltage Protection Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EMH51T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC123YCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123YCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 1786 шт: термін постачання 21-31 дні (днів) |
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BD42754FP2-CE2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD42754FP2-CE2 | Rohm Semiconductor |
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на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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BD93E11GWL-EVK-001 | Rohm Semiconductor |
![]() Packaging: Bulk Function: USB PD Controller (Power Delivery) Type: Power Management Contents: Board(s), Cable(s) Utilized IC / Part: BD93E11 Supplied Contents: Board(s), Cable(s) Secondary Attributes: On-Board LEDs Embedded: No Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BD93E11GWL-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-UFBGA, CSPBGA Function: Controller Interface: I2C Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V Current - Supply: 190µA Protocol: USB Supplier Device Package: UCSP50L2C Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD93E11GWL-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 36-UFBGA, CSPBGA Function: Controller Interface: I2C Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V Current - Supply: 190µA Protocol: USB Supplier Device Package: UCSP50L2C Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2533 шт: термін постачання 21-31 дні (днів) |
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QH8KC5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KC5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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QH8KC6TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KC6TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
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RV4E031RPHZGTCR1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-6W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RV4E031RPHZGTCR1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-6W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5601 шт: термін постачання 21-31 дні (днів) |
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RUQ050N02HZGTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RUQ050N02HZGTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 3969 шт: термін постачання 21-31 дні (днів) |
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RSQ030N08HZGTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RSQ030N08HZGTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6176 шт: термін постачання 21-31 дні (днів) |
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RSQ035P03HZGTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSQ035P03HZGTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2175 шт: термін постачання 21-31 дні (днів) |
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RSQ025P03HZGTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSQ025P03HZGTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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RVQ040N05HZGTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±21V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BD800M7WFP2-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 34 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-5 Voltage - Output (Max): 16V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.2V @ 700mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 53 µA Qualification: AEC-Q100 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BD800M7WFP2-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 34 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-5 Voltage - Output (Max): 16V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.2V @ 700mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 53 µA Qualification: AEC-Q100 |
на замовлення 1705 шт: термін постачання 21-31 дні (днів) |
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SML-811UTT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 1305 (3412 Metric) Color: Red Size / Dimension: 3.40mm L x 1.25mm W Mounting Type: Surface Mount, Bottom Entry Millicandela Rating: 22.4mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 1.95V Lens Color: Colorless Current - Test: 10mA Height (Max): 1.20mm Wavelength - Dominant: 620nm Supplier Device Package: 3412(1305) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.25mm x 1.20mm |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SML-811UTT86 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 1305 (3412 Metric) Color: Red Size / Dimension: 3.40mm L x 1.25mm W Mounting Type: Surface Mount, Bottom Entry Millicandela Rating: 22.4mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 1.95V Lens Color: Colorless Current - Test: 10mA Height (Max): 1.20mm Wavelength - Dominant: 620nm Supplier Device Package: 3412(1305) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.25mm x 1.20mm |
на замовлення 5959 шт: термін постачання 21-31 дні (днів) |
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RFUH10NS6SFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 157pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFUH10NS6SFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 157pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 1711 шт: термін постачання 21-31 дні (днів) |
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RF081L2STFTE25 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1.1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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RF081L2STFTE25 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1.1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 3994 шт: термін постачання 21-31 дні (днів) |
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BD3378MUV-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Input: -14V ~ 40V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 6V ~ 28V Applications: Dual Power Supply Monitor Supplier Device Package: VQFN48MCV070 Grade: Automotive Part Status: Active Current - Supply: 75 µA DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD3378MUV-ME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Input: -14V ~ 40V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 6V ~ 28V Applications: Dual Power Supply Monitor Supplier Device Package: VQFN48MCV070 Grade: Automotive Part Status: Active Current - Supply: 75 µA DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1270 шт: термін постачання 21-31 дні (днів) |
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RB-D620Q504TB48 | Rohm Semiconductor |
![]() Packaging: Box Mounting Type: Fixed Type: MCU 16-Bit Contents: Board(s) Core Processor: nX-U16/100 Board Type: Evaluation Platform Utilized IC / Part: ML620Q503, ML620Q504 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU1840AMUV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Interface: I2C Operating Temperature: -30°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: VQFN020V4040 Charge Current - Max: 400mA Programmable Features: Current, Voltage Fault Protection: Over Current, Over Temperature, Over Voltage Voltage - Supply (Max): 1.98V Battery Pack Voltage: 5.7V (Max) Current - Charging: Constant - Programmable |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RB420S-30TE61 | Rohm Semiconductor | Description: DIODE SCHOTTKY SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB420STE61 | Rohm Semiconductor | Description: DIODE SCHOTTKY SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RRS050P03HZGTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRS050P03HZGTB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2286 шт: термін постачання 21-31 дні (днів) |
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LSS050P03FP8TB1 | Rohm Semiconductor | Description: MOSFET P-CH 30V 5A SOP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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R6576KNZ4C13 | Rohm Semiconductor |
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на замовлення 504 шт: термін постачання 21-31 дні (днів) |
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VS7V0UA1LAMTFTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Current - Peak Pulse (10/1000µs): 50A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: PMDTM Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS7V0UA1LAMTFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Current - Peak Pulse (10/1000µs): 50A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: PMDTM Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2467 шт: термін постачання 21-31 дні (днів) |
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SMLVN6RGB7W1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Color: Red, Green, Blue (RGB) Size / Dimension: 3.10mm L x 2.80mm W Mounting Type: Surface Mount Millicandela Rating: 500mcd Red, 1000mcd Green, 300mcd Blue Configuration: Independent Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 0.70mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: 3528 (1411) Part Status: Active Lens Style: Rectangle with Flat Top |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DTA123JMFHAT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
DTA123JMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.69 грн |
23+ | 13.49 грн |
100+ | 6.58 грн |
500+ | 5.15 грн |
1000+ | 3.58 грн |
2000+ | 3.10 грн |
DTA143XMFHAT2L |
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Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику
од. на суму грн.
DTA143XMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 272 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.10 грн |
21+ | 15.25 грн |
100+ | 8.10 грн |
DTC124XMFHAT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC124XMFHAT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 7630 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.71 грн |
32+ | 9.81 грн |
100+ | 6.05 грн |
500+ | 4.15 грн |
1000+ | 3.65 грн |
2000+ | 3.24 грн |
DTC123ECAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
товару немає в наявності
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од. на суму грн.
DTC123ECAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
на замовлення 2912 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.44 грн |
18+ | 17.32 грн |
100+ | 7.23 грн |
SP8M4HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M4HZGTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 1968 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 171.10 грн |
10+ | 137.25 грн |
100+ | 109.28 грн |
500+ | 86.78 грн |
1000+ | 73.63 грн |
TFZGTR18B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW TUMD2
Description: DIODE ZENER 18V 500MW TUMD2
на замовлення 101 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BZX84B6V2LYFHT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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BZX84B6V2LYFHT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
на замовлення 2719 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 22.28 грн |
24+ | 13.18 грн |
100+ | 6.27 грн |
500+ | 5.27 грн |
1000+ | 4.64 грн |
BD60910GU-E2 |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR RGLTR PWM 24VCSP
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA, CSPBGA
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25.6mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: VCSP85H3
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Not For New Designs
Description: IC LED DRVR RGLTR PWM 24VCSP
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA, CSPBGA
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25.6mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: VCSP85H3
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Not For New Designs
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SDR03EZPF4301 |
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Виробник: Rohm Semiconductor
Description: RES SMD 4.3 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.3 kOhms
Description: RES SMD 4.3 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.3 kOhms
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P02SCT3040KR-EVK-001 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR SCT3040KR
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: SCT3040KR
Supplied Contents: Board(s)
Primary Attributes: Overvoltage Protection
Part Status: Not For New Designs
Description: EVAL BOARD FOR SCT3040KR
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: SCT3040KR
Supplied Contents: Board(s)
Primary Attributes: Overvoltage Protection
Part Status: Not For New Designs
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EMH51T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 4.76 грн |
DTC123YCAHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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од. на суму грн.
DTC123YCAHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 1786 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.53 грн |
38+ | 8.28 грн |
100+ | 5.13 грн |
500+ | 3.50 грн |
1000+ | 3.08 грн |
BD42754FP2-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-5
Description: IC REG LINEAR 5V 500MA TO263-5
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BD42754FP2-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-5
Description: IC REG LINEAR 5V 500MA TO263-5
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 199.75 грн |
BD93E11GWL-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD93E11
Packaging: Bulk
Function: USB PD Controller (Power Delivery)
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD93E11
Supplied Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR BD93E11
Packaging: Bulk
Function: USB PD Controller (Power Delivery)
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD93E11
Supplied Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 16695.29 грн |
BD93E11GWL-E2 |
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Виробник: Rohm Semiconductor
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
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BD93E11GWL-E2 |
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Виробник: Rohm Semiconductor
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2533 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 498.97 грн |
10+ | 370.14 грн |
25+ | 342.52 грн |
100+ | 292.93 грн |
250+ | 279.34 грн |
500+ | 271.15 грн |
1000+ | 260.07 грн |
QH8KC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
QH8KC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 87.54 грн |
10+ | 52.88 грн |
100+ | 34.76 грн |
QH8KC6TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
QH8KC6TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 132.10 грн |
10+ | 80.70 грн |
100+ | 54.08 грн |
500+ | 40.06 грн |
1000+ | 36.62 грн |
RV4E031RPHZGTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
RV4E031RPHZGTCR1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5601 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 92.31 грн |
10+ | 55.71 грн |
100+ | 36.68 грн |
500+ | 26.75 грн |
1000+ | 24.28 грн |
RUQ050N02HZGTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.76 грн |
RUQ050N02HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3969 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 65.26 грн |
10+ | 54.33 грн |
100+ | 37.63 грн |
500+ | 29.50 грн |
1000+ | 25.11 грн |
RSQ030N08HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 21.34 грн |
6000+ | 19.47 грн |
RSQ030N08HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6176 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.69 грн |
10+ | 43.22 грн |
100+ | 31.80 грн |
500+ | 25.04 грн |
1000+ | 22.80 грн |
RSQ035P03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
RSQ035P03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 90.72 грн |
10+ | 55.02 грн |
100+ | 36.16 грн |
500+ | 26.35 грн |
1000+ | 23.90 грн |
RSQ025P03HZGTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
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од. на суму грн.
RSQ025P03HZGTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
на замовлення 993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 83.56 грн |
10+ | 50.50 грн |
100+ | 33.05 грн |
500+ | 24.00 грн |
RVQ040N05HZGTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 22.28 грн |
BD800M7WFP2-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
500+ | 160.66 грн |
1000+ | 130.48 грн |
BD800M7WFP2-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 700MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 34 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.2V @ 700mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 53 µA
Qualification: AEC-Q100
на замовлення 1705 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 256.25 грн |
10+ | 221.85 грн |
25+ | 209.70 грн |
100+ | 170.55 грн |
250+ | 161.81 грн |
SML-811UTT86 |
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Виробник: Rohm Semiconductor
Description: LED RED CLEAR 3412 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1305 (3412 Metric)
Color: Red
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount, Bottom Entry
Millicandela Rating: 22.4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.95V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 1.20mm
Wavelength - Dominant: 620nm
Supplier Device Package: 3412(1305)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.25mm x 1.20mm
Description: LED RED CLEAR 3412 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1305 (3412 Metric)
Color: Red
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount, Bottom Entry
Millicandela Rating: 22.4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.95V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 1.20mm
Wavelength - Dominant: 620nm
Supplier Device Package: 3412(1305)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.25mm x 1.20mm
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.81 грн |
SML-811UTT86 |
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Виробник: Rohm Semiconductor
Description: LED RED CLEAR 3412 SMD
Packaging: Cut Tape (CT)
Package / Case: 1305 (3412 Metric)
Color: Red
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount, Bottom Entry
Millicandela Rating: 22.4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.95V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 1.20mm
Wavelength - Dominant: 620nm
Supplier Device Package: 3412(1305)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.25mm x 1.20mm
Description: LED RED CLEAR 3412 SMD
Packaging: Cut Tape (CT)
Package / Case: 1305 (3412 Metric)
Color: Red
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount, Bottom Entry
Millicandela Rating: 22.4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.95V
Lens Color: Colorless
Current - Test: 10mA
Height (Max): 1.20mm
Wavelength - Dominant: 620nm
Supplier Device Package: 3412(1305)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.25mm x 1.20mm
на замовлення 5959 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.97 грн |
11+ | 28.43 грн |
100+ | 20.52 грн |
500+ | 15.90 грн |
1000+ | 14.80 грн |
RFUH10NS6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 157pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 157pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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од. на суму грн.
RFUH10NS6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 157pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 157pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1711 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 129.72 грн |
10+ | 80.70 грн |
100+ | 58.67 грн |
500+ | 43.59 грн |
RF081L2STFTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1.1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1.1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1.1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1.1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 14.06 грн |
RF081L2STFTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1.1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1.1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1.1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1.1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 54.91 грн |
10+ | 32.65 грн |
100+ | 21.02 грн |
500+ | 15.01 грн |
BD3378MUV-ME2 |
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Виробник: Rohm Semiconductor
Description: MULTIPLE INPUT SWITCH MONITOR LS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: -14V ~ 40V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V ~ 28V
Applications: Dual Power Supply Monitor
Supplier Device Package: VQFN48MCV070
Grade: Automotive
Part Status: Active
Current - Supply: 75 µA
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: MULTIPLE INPUT SWITCH MONITOR LS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: -14V ~ 40V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V ~ 28V
Applications: Dual Power Supply Monitor
Supplier Device Package: VQFN48MCV070
Grade: Automotive
Part Status: Active
Current - Supply: 75 µA
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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од. на суму грн.
BD3378MUV-ME2 |
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Виробник: Rohm Semiconductor
Description: MULTIPLE INPUT SWITCH MONITOR LS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: -14V ~ 40V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V ~ 28V
Applications: Dual Power Supply Monitor
Supplier Device Package: VQFN48MCV070
Grade: Automotive
Part Status: Active
Current - Supply: 75 µA
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: MULTIPLE INPUT SWITCH MONITOR LS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: -14V ~ 40V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V ~ 28V
Applications: Dual Power Supply Monitor
Supplier Device Package: VQFN48MCV070
Grade: Automotive
Part Status: Active
Current - Supply: 75 µA
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 640.63 грн |
10+ | 414.66 грн |
25+ | 361.83 грн |
100+ | 283.52 грн |
250+ | 256.00 грн |
500+ | 249.83 грн |
RB-D620Q504TB48 |
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Виробник: Rohm Semiconductor
Description: ML620Q503/ML620Q504 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 16-Bit
Contents: Board(s)
Core Processor: nX-U16/100
Board Type: Evaluation Platform
Utilized IC / Part: ML620Q503, ML620Q504
Part Status: Active
Description: ML620Q503/ML620Q504 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 16-Bit
Contents: Board(s)
Core Processor: nX-U16/100
Board Type: Evaluation Platform
Utilized IC / Part: ML620Q503, ML620Q504
Part Status: Active
товару немає в наявності
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од. на суму грн.
BU1840AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC BATT CHARGE MGMT 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: VQFN020V4040
Charge Current - Max: 400mA
Programmable Features: Current, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage
Voltage - Supply (Max): 1.98V
Battery Pack Voltage: 5.7V (Max)
Current - Charging: Constant - Programmable
Description: IC BATT CHARGE MGMT 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: VQFN020V4040
Charge Current - Max: 400mA
Programmable Features: Current, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage
Voltage - Supply (Max): 1.98V
Battery Pack Voltage: 5.7V (Max)
Current - Charging: Constant - Programmable
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RB420S-30TE61 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Description: DIODE SCHOTTKY SMD
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RB420STE61 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Description: DIODE SCHOTTKY SMD
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од. на суму грн.
RRS050P03HZGTB |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE PCH -30V -5A POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE PCH -30V -5A POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
RRS050P03HZGTB |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE PCH -30V -5A POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE PCH -30V -5A POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2286 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.68 грн |
10+ | 84.68 грн |
100+ | 56.90 грн |
500+ | 42.24 грн |
1000+ | 38.65 грн |
LSS050P03FP8TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A SOP8
Description: MOSFET P-CH 30V 5A SOP8
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R6576KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: 650V 76A TO-247, HIGH-SPEED SWIT
Description: 650V 76A TO-247, HIGH-SPEED SWIT
на замовлення 504 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1295.58 грн |
10+ | 1146.59 грн |
100+ | 968.33 грн |
500+ | 808.39 грн |
VS7V0UA1LAMTFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 7VWM 12VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7VWM 12VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
VS7V0UA1LAMTFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 7VWM 12VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7VWM 12VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2467 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.57 грн |
10+ | 33.11 грн |
100+ | 22.62 грн |
500+ | 16.78 грн |
1000+ | 15.32 грн |
SMLVN6RGB7W1 |
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Виробник: Rohm Semiconductor
Description: LED RGB 3528 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Color: Red, Green, Blue (RGB)
Size / Dimension: 3.10mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 500mcd Red, 1000mcd Green, 300mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.70mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 3528 (1411)
Part Status: Active
Lens Style: Rectangle with Flat Top
Description: LED RGB 3528 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Color: Red, Green, Blue (RGB)
Size / Dimension: 3.10mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 500mcd Red, 1000mcd Green, 300mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.70mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 3528 (1411)
Part Status: Active
Lens Style: Rectangle with Flat Top
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 54.07 грн |