Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101747) > Сторінка 886 з 1696
| Фото | Назва | Виробник | Інформація |
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RB098BGE150TL | Rohm Semiconductor |
Description: 150V, 6A, TO-252, CATHODE COMMONPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB098BGE150TL | Rohm Semiconductor |
Description: 150V, 6A, TO-252, CATHODE COMMONPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 150 V |
на замовлення 2390 шт: термін постачання 21-31 дні (днів) |
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RBQ10BGE10ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOT 100V 10A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBQ10BGE10ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOT 100V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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RB088BGE-60TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 5A TO-252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB088BGE-60TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 5A TO-252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 60 V |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE40ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 10A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A Current - Reverse Leakage @ Vr: 120 µA @ 40 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE40ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A Current - Reverse Leakage @ Vr: 120 µA @ 40 V |
на замовлення 4987 шт: термін постачання 21-31 дні (днів) |
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BU91796BMUF-ME2 | Rohm Semiconductor |
Description: LOW DUTY LCD SEGMENT DRIVER FORPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Display Type: LCD Mounting Type: Surface Mount, Wettable Flank Interface: 2-Wire Serial Configuration: 80 Segment Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 6V Supplier Device Package: VQFN32FBV050 Part Status: Active Current - Supply: 12.5 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BU91796BMUF-ME2 | Rohm Semiconductor |
Description: LOW DUTY LCD SEGMENT DRIVER FORPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Display Type: LCD Mounting Type: Surface Mount, Wettable Flank Interface: 2-Wire Serial Configuration: 80 Segment Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 6V Supplier Device Package: VQFN32FBV050 Part Status: Active Current - Supply: 12.5 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12150 шт: термін постачання 21-31 дні (днів) |
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ESR25JZPF1000 | Rohm Semiconductor |
Description: RES 100 OHM 1% 1W 1210Packaging: Cut Tape (CT) Power (Watts): 1W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1210 (3225 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1210 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 100 Ohms |
на замовлення 11596 шт: термін постачання 21-31 дні (днів) |
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R6020ENXC7G | Rohm Semiconductor |
Description: 600V 20A TO-220FM, LOW-NOISE POWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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R6004ENXC7G | Rohm Semiconductor |
Description: 600V 4A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
на замовлення 815 шт: термін постачання 21-31 дні (днів) |
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R6009ENXC7G | Rohm Semiconductor |
Description: 600V 9A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6015KNXC7G | Rohm Semiconductor |
Description: 600V 15A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
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R6015ENXC7G | Rohm Semiconductor |
Description: 600V 15A TO-220FM, LOW-NOISE POWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009KNXC7G | Rohm Semiconductor |
Description: 600V 9A TO-220FM, HIGH-SPEED SWIPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 551 шт: термін постачання 21-31 дні (днів) |
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R6024KNXC7G | Rohm Semiconductor |
Description: 600V 24A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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R6030KNXC7G | Rohm Semiconductor |
Description: 600V 30A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
на замовлення 827 шт: термін постачання 21-31 дні (днів) |
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R6006KNXC7G | Rohm Semiconductor |
Description: 600V 6A TO-220FM, HIGH-SPEED SWIPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 974 шт: термін постачання 21-31 дні (днів) |
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R6006JNXC7G | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO220FMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
на замовлення 819 шт: термін постачання 21-31 дні (днів) |
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R6007ENXC7G | Rohm Semiconductor |
Description: 600V 7A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
на замовлення 1996 шт: термін постачання 21-31 дні (днів) |
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R6007KNXC7G | Rohm Semiconductor |
Description: 600V 7A TO-220FM, HIGH-SPEED SWIPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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R6008ANX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 8A TO-220FM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6008FNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 8A TO-220FM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6004KNJTL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 4A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6008FNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 8A LPTS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6007KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO220FM |
на замовлення 442 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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R6007KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO220FM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BD7997FS-E2 | Rohm Semiconductor | Description: IC POWER MANAGEMENT SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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UDZLVFHTE-1751 | Rohm Semiconductor |
Description: DIODE ZENER 51V 200MW UMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UDZLVFHTE-1751 | Rohm Semiconductor |
Description: DIODE ZENER 51V 200MW UMD2 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SDR03EZPJ120 | Rohm Semiconductor |
Description: RES SMD 12 OHM 5% 0.3W 0603Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 12 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR03EZPJ120 | Rohm Semiconductor |
Description: RES SMD 12 OHM 5% 0.3W 0603Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 12 Ohms |
на замовлення 3393 шт: термін постачання 21-31 дні (днів) |
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BD41044FJ-CE2 | Rohm Semiconductor |
Description: IC TRANSCEIVER HALF 1/1 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: 8-SOP-J Receiver Hysteresis: 300 mV Duplex: Half Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD41044FJ-CE2 | Rohm Semiconductor |
Description: IC TRANSCEIVER HALF 1/1 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: 8-SOP-J Receiver Hysteresis: 300 mV Duplex: Half Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1284 шт: термін постачання 21-31 дні (днів) |
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BA033ST | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 1A TO220FP-5 Packaging: Tube Package / Case: TO-220-5 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: TO-220FP-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Not For New Designs PSRR: 55dB (120Hz) Protection Features: Over Current, Over Temperature, Over Voltage Current - Supply (Max): 5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C27VLYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±7.04% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C27VLYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Packaging: Cut Tape (CT) Tolerance: ±7.04% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2952 шт: термін постачання 21-31 дні (днів) |
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BZX84C27VLYT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±7.04% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C27VLYT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Packaging: Cut Tape (CT) Tolerance: ±7.04% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
на замовлення 2744 шт: термін постачання 21-31 дні (днів) |
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RQ6A045APTCR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V |
на замовлення 2733 шт: термін постачання 21-31 дні (днів) |
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RQ7E110AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 10mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
на замовлення 494 шт: термін постачання 21-31 дні (днів) |
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BM531Q11-Z | Rohm Semiconductor |
Description: IC LED DRIVER RGLTR PWM 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Number of Outputs: 1 Frequency: 400kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 105°C Applications: Backlight Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: 7-DIP Dimming: Analog, PWM Voltage - Supply (Min): 9V Voltage - Supply (Max): 35V Part Status: Active |
на замовлення 349 шт: термін постачання 21-31 дні (днів) |
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QST2TR | Rohm Semiconductor |
Description: TRANS PNP 12V 6A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Frequency - Transition: 250MHz Supplier Device Package: TSMT6 (SC-95) Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 1.25 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QST2TR | Rohm Semiconductor |
Description: TRANS PNP 12V 6A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Frequency - Transition: 250MHz Supplier Device Package: TSMT6 (SC-95) Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 1.25 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD9S300MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 3A 16VQFNPackaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: VQFN016V3030 Synchronous Rectifier: Yes Voltage - Output (Max): 4.4V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.8V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9S300MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 3A 16VQFNPackaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: VQFN016V3030 Synchronous Rectifier: Yes Voltage - Output (Max): 4.4V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.8V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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BD9P205MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 2A VQFN20FV4040Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: VQFN20FV4040 Synchronous Rectifier: Yes Voltage - Output (Max): 8.5V Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9P205MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 2A VQFN20FV4040Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: VQFN20FV4040 Synchronous Rectifier: Yes Voltage - Output (Max): 8.5V Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2445 шт: термін постачання 21-31 дні (днів) |
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2SCR587D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 120V 3A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SCR587D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 120V 3A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 10 W |
на замовлення 1137 шт: термін постачання 21-31 дні (днів) |
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2SCR583D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 50V 7A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SCR583D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 50V 7A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 10 W |
на замовлення 2621 шт: термін постачання 21-31 дні (днів) |
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BA17806FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 6V 1A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 21V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 6V Part Status: Active PSRR: 73dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA17806FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 6V 1A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 21V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 6V Part Status: Active PSRR: 73dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
на замовлення 974 шт: термін постачання 21-31 дні (днів) |
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R6504KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING, NCH 650V 4Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 5V @ 130µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6504KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING, NCH 650V 4Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 5V @ 130µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
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BSM250D17P2E004 | Rohm Semiconductor |
Description: MOSFET 2N-CH 1700V 250A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1800W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Vgs(th) (Max) @ Id: 4V @ 66mA Supplier Device Package: Module Part Status: Active |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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BSM180D12P2E002 | Rohm Semiconductor |
Description: 1200V, 204A, HALF BRIDGE, SILICO Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1360W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V Vgs(th) (Max) @ Id: 4V @ 35.2mA Supplier Device Package: Module Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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| RB098BGE150TL |
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Виробник: Rohm Semiconductor
Description: 150V, 6A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
Description: 150V, 6A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| RB098BGE150TL |
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Виробник: Rohm Semiconductor
Description: 150V, 6A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
Description: 150V, 6A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.99 грн |
| 10+ | 126.92 грн |
| 100+ | 101.98 грн |
| 500+ | 78.64 грн |
| 1000+ | 65.44 грн |
| RBQ10BGE10ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOT 100V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RBQ10BGE10ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOT 100V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 160.05 грн |
| 10+ | 103.01 грн |
| 100+ | 71.25 грн |
| 500+ | 53.50 грн |
| 1000+ | 52.22 грн |
| RB088BGE-60TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 5A TO-252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 5A TO-252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| RB088BGE-60TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 5A TO-252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 5A TO-252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.60 грн |
| 10+ | 96.80 грн |
| 100+ | 65.70 грн |
| 500+ | 49.16 грн |
| 1000+ | 47.15 грн |
| RBR10BGE40ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 120 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 120 µA @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.77 грн |
| RBR10BGE40ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 120 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 120 µA @ 40 V
на замовлення 4987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.71 грн |
| 10+ | 67.23 грн |
| 100+ | 59.72 грн |
| 500+ | 43.98 грн |
| 1000+ | 42.88 грн |
| BU91796BMUF-ME2 |
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Виробник: Rohm Semiconductor
Description: LOW DUTY LCD SEGMENT DRIVER FOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount, Wettable Flank
Interface: 2-Wire Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: VQFN32FBV050
Part Status: Active
Current - Supply: 12.5 µA
Grade: Automotive
Qualification: AEC-Q100
Description: LOW DUTY LCD SEGMENT DRIVER FOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount, Wettable Flank
Interface: 2-Wire Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: VQFN32FBV050
Part Status: Active
Current - Supply: 12.5 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 82.39 грн |
| BU91796BMUF-ME2 |
![]() |
Виробник: Rohm Semiconductor
Description: LOW DUTY LCD SEGMENT DRIVER FOR
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount, Wettable Flank
Interface: 2-Wire Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: VQFN32FBV050
Part Status: Active
Current - Supply: 12.5 µA
Grade: Automotive
Qualification: AEC-Q100
Description: LOW DUTY LCD SEGMENT DRIVER FOR
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount, Wettable Flank
Interface: 2-Wire Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: VQFN32FBV050
Part Status: Active
Current - Supply: 12.5 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 174.75 грн |
| 10+ | 125.03 грн |
| 25+ | 114.21 грн |
| 100+ | 96.05 грн |
| 250+ | 90.75 грн |
| 500+ | 87.55 грн |
| 1000+ | 83.52 грн |
| ESR25JZPF1000 |
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Виробник: Rohm Semiconductor
Description: RES 100 OHM 1% 1W 1210
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 Ohms
Description: RES 100 OHM 1% 1W 1210
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 Ohms
на замовлення 11596 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.03 грн |
| 20+ | 16.20 грн |
| 50+ | 11.21 грн |
| 100+ | 9.14 грн |
| 500+ | 6.86 грн |
| 1000+ | 6.17 грн |
| R6020ENXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: 600V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.03 грн |
| 50+ | 142.05 грн |
| 100+ | 141.38 грн |
| 500+ | 76.71 грн |
| R6004ENXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: 600V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
на замовлення 815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.14 грн |
| 50+ | 70.79 грн |
| 100+ | 69.80 грн |
| 500+ | 63.29 грн |
| R6009ENXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: 600V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.23 грн |
| 50+ | 119.12 грн |
| 100+ | 115.41 грн |
| 500+ | 96.31 грн |
| 1000+ | 89.40 грн |
| R6015KNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: 600V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.85 грн |
| 50+ | 102.07 грн |
| 100+ | 101.74 грн |
| 500+ | 92.39 грн |
| R6015ENXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: 600V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.54 грн |
| 50+ | 151.62 грн |
| 100+ | 143.67 грн |
| 500+ | 111.16 грн |
| 1000+ | 103.56 грн |
| R6009KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: 600V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 551 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.42 грн |
| 10+ | 167.41 грн |
| 100+ | 135.44 грн |
| 500+ | 112.99 грн |
| R6024KNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: 600V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 239.26 грн |
| 50+ | 152.03 грн |
| 100+ | 148.18 грн |
| 500+ | 73.83 грн |
| R6030KNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 827 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.80 грн |
| 50+ | 180.62 грн |
| 100+ | 176.33 грн |
| 500+ | 85.52 грн |
| R6006KNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 6A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: 600V 6A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.17 грн |
| 50+ | 67.33 грн |
| 100+ | 60.19 грн |
| 500+ | 44.73 грн |
| R6006JNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
на замовлення 819 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.65 грн |
| 50+ | 110.10 грн |
| 100+ | 99.45 грн |
| 500+ | 75.80 грн |
| R6007ENXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: 600V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.20 грн |
| 50+ | 106.90 грн |
| 100+ | 102.84 грн |
| 500+ | 81.70 грн |
| 1000+ | 75.62 грн |
| R6007KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 7A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: 600V 7A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
на замовлення 945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.82 грн |
| 50+ | 77.24 грн |
| 100+ | 74.75 грн |
| 500+ | 36.99 грн |
| R6008ANX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
Description: MOSFET N-CH 600V 8A TO-220FM
товару немає в наявності
В кошику
од. на суму грн.
| R6008FNX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
Description: MOSFET N-CH 600V 8A TO-220FM
товару немає в наявності
В кошику
од. на суму грн.
| R6004KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 4A TO263
Description: MOSFET N-CHANNEL 600V 4A TO263
товару немає в наявності
В кошику
од. на суму грн.
| R6008FNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
Description: MOSFET N-CH 600V 8A LPTS
товару немає в наявності
В кошику
од. на суму грн.
| R6007KNX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
Description: MOSFET N-CH 600V 7A TO220FM
на замовлення 442 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| R6007KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
Description: MOSFET N-CH 600V 7A TO220FM
товару немає в наявності
В кошику
од. на суму грн.
| BD7997FS-E2 |
Виробник: Rohm Semiconductor
Description: IC POWER MANAGEMENT SMD
Description: IC POWER MANAGEMENT SMD
товару немає в наявності
В кошику
од. на суму грн.
| UDZLVFHTE-1751 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 51V 200MW UMD2
Description: DIODE ZENER 51V 200MW UMD2
товару немає в наявності
В кошику
од. на суму грн.
| UDZLVFHTE-1751 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 51V 200MW UMD2
Description: DIODE ZENER 51V 200MW UMD2
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SDR03EZPJ120 |
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Виробник: Rohm Semiconductor
Description: RES SMD 12 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 12 Ohms
Description: RES SMD 12 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 12 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| SDR03EZPJ120 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 12 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 12 Ohms
Description: RES SMD 12 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 12 Ohms
на замовлення 3393 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.80 грн |
| 73+ | 4.32 грн |
| 112+ | 2.83 грн |
| 131+ | 2.26 грн |
| 500+ | 1.59 грн |
| 1000+ | 1.38 грн |
| BD41044FJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 8-SOP-J
Receiver Hysteresis: 300 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 8-SOP-J
Receiver Hysteresis: 300 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BD41044FJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 8-SOP-J
Receiver Hysteresis: 300 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 8-SOP-J
Receiver Hysteresis: 300 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.72 грн |
| 10+ | 124.56 грн |
| 25+ | 117.48 грн |
| 100+ | 93.95 грн |
| 250+ | 88.21 грн |
| 500+ | 77.19 грн |
| 1000+ | 62.91 грн |
| BA033ST |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 1A TO220FP-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220FP-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Not For New Designs
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 5 mA
Description: IC REG LINEAR 3.3V 1A TO220FP-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220FP-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Not For New Designs
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 5 mA
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C27VLYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C27VLYFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2952 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.86 грн |
| 22+ | 14.70 грн |
| 100+ | 7.24 грн |
| 500+ | 6.62 грн |
| 1000+ | 6.44 грн |
| BZX84C27VLYT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C27VLYT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 27V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 2744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.60 грн |
| 25+ | 12.90 грн |
| 100+ | 6.41 грн |
| 500+ | 5.84 грн |
| 1000+ | 5.66 грн |
| RQ6A045APTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
на замовлення 2733 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.14 грн |
| 10+ | 39.63 грн |
| 100+ | 25.80 грн |
| 500+ | 18.62 грн |
| 1000+ | 16.81 грн |
| RQ7E110AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.34 грн |
| 10+ | 67.86 грн |
| 100+ | 45.58 грн |
| BM531Q11-Z |
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Виробник: Rohm Semiconductor
Description: IC LED DRIVER RGLTR PWM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-DIP
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
Description: IC LED DRIVER RGLTR PWM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-DIP
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
на замовлення 349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 204.97 грн |
| 10+ | 127.62 грн |
| 100+ | 87.55 грн |
| QST2TR |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 6A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
Description: TRANS PNP 12V 6A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.90 грн |
| QST2TR |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 6A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
Description: TRANS PNP 12V 6A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.25 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.45 грн |
| 10+ | 42.78 грн |
| 100+ | 29.59 грн |
| 500+ | 23.20 грн |
| 1000+ | 19.75 грн |
| BD9S300MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BD9S300MUF-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.85 грн |
| 10+ | 189.12 грн |
| 25+ | 178.47 грн |
| 100+ | 142.69 грн |
| 250+ | 133.99 грн |
| 500+ | 117.24 грн |
| 1000+ | 95.55 грн |
| BD9P205MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BD9P205MUF-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 368.28 грн |
| 10+ | 230.40 грн |
| 25+ | 197.94 грн |
| 100+ | 151.31 грн |
| 250+ | 134.40 грн |
| 500+ | 123.99 грн |
| 1000+ | 113.87 грн |
| 2SCR587D3TL1 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 3A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
Description: TRANS NPN 120V 3A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SCR587D3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 3A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
Description: TRANS NPN 120V 3A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 163.32 грн |
| 10+ | 100.73 грн |
| 100+ | 68.25 грн |
| 500+ | 50.98 грн |
| 1000+ | 46.78 грн |
| 2SCR583D3TL1 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Description: TRANS NPN 50V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SCR583D3TL1 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 7A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Description: TRANS NPN 50V 7A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
на замовлення 2621 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 164.14 грн |
| 10+ | 101.36 грн |
| 100+ | 68.67 грн |
| 500+ | 51.30 грн |
| 1000+ | 47.07 грн |
| BA17806FP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 6V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 6V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
товару немає в наявності
В кошику
од. на суму грн.
| BA17806FP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 6V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 6V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
на замовлення 974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.79 грн |
| 10+ | 93.73 грн |
| 25+ | 78.86 грн |
| 100+ | 58.21 грн |
| 250+ | 50.45 грн |
| 500+ | 45.68 грн |
| R6504KND3TL1 |
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Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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| R6504KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.42 грн |
| 10+ | 97.19 грн |
| 100+ | 65.79 грн |
| 500+ | 49.14 грн |
| 1000+ | 45.09 грн |
| BSM250D17P2E004 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 1700V 250A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1800W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 66mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 250A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1800W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 66mA
Supplier Device Package: Module
Part Status: Active
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 76608.85 грн |
| BSM180D12P2E002 |
Виробник: Rohm Semiconductor
Description: 1200V, 204A, HALF BRIDGE, SILICO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1360W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Supplier Device Package: Module
Part Status: Active
Description: 1200V, 204A, HALF BRIDGE, SILICO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1360W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Supplier Device Package: Module
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 57580.55 грн |




















