Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102560) > Сторінка 888 з 1710
Фото | Назва | Виробник | Інформація |
Доступність |
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BAW56HYFHT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAW56HYFHT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 |
на замовлення 2674 шт: термін постачання 21-31 дні (днів) |
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ESR03EZPF51R0 | Rohm Semiconductor |
![]() Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 51 Ohms |
на замовлення 79350 шт: термін постачання 21-31 дні (днів) |
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ESR03EZPF51R0 | Rohm Semiconductor |
![]() Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 51 Ohms |
на замовлення 79423 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPJ513 | Rohm Semiconductor |
![]() Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 51 kOhms |
на замовлення 19135 шт: термін постачання 21-31 дні (днів) |
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BM6249FS-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: PWM Operating Temperature: 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 400V Applications: Fan Motor Driver Technology: NMOS Voltage - Load: 600V Supplier Device Package: SSOP-A54_36 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BM6249FS-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: PWM Operating Temperature: 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 400V Applications: Fan Motor Driver Technology: NMOS Voltage - Load: 600V Supplier Device Package: SSOP-A54_36 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 1984 шт: термін постачання 21-31 дні (днів) |
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ESR03EZPJ1R0 | Rohm Semiconductor |
![]() Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 1 Ohms |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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EMB59T2R | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EMB59T2R | Rohm Semiconductor |
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на замовлення 6880 шт: термін постачання 21-31 дні (днів) |
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EMD72T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD72T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 18647 шт: термін постачання 21-31 дні (днів) |
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EMD52T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD52T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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UMB3NFHATN | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMB3NFHATN | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2549 шт: термін постачання 21-31 дні (днів) |
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UMH4NFHATN | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMH4NFHATN | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5969 шт: термін постачання 21-31 дні (днів) |
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DTA013ZMT2L | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA013ZMT2L | Rohm Semiconductor |
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на замовлення 7647 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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UMD25NTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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UMD25NTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT6 |
на замовлення 11840 шт: термін постачання 21-31 дні (днів) |
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DTA123EMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA123EMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 7640 шт: термін постачання 21-31 дні (днів) |
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DTA024XMT2L | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (WITH BUI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA024XMT2L | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (WITH BUI |
на замовлення 4300 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTC043XUBTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC043XUBTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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DTC043XMT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC043XMT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 7732 шт: термін постачання 21-31 дні (днів) |
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DTA123JMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA123JMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
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DTA143XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA143XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
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DTC124XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC124XMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 7630 шт: термін постачання 21-31 дні (днів) |
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DTC123ECAT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123ECAT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
на замовлення 2912 шт: термін постачання 21-31 дні (днів) |
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SP8M4HZGTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SP8M4HZGTB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 1968 шт: термін постачання 21-31 дні (днів) |
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TFZGTR18B | Rohm Semiconductor | Description: DIODE ZENER 18V 500MW TUMD2 |
на замовлення 101 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B6V2LYFHT116 | Rohm Semiconductor |
![]() Tolerance: ±1.94% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B6V2LYFHT116 | Rohm Semiconductor |
![]() Tolerance: ±1.94% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
на замовлення 2719 шт: термін постачання 21-31 дні (днів) |
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BD60910GU-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VFBGA, CSPBGA Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25.6mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: VCSP85H3 Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR03EZPF4301 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±1% Features: Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 4.3 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P02SCT3040KR-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR SCT3040KR Packaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Utilized IC / Part: SCT3040KR Supplied Contents: Board(s) Primary Attributes: Overvoltage Protection Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EMH51T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC123YCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123YCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 1786 шт: термін постачання 21-31 дні (днів) |
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BD42754FP2-CE2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD42754FP2-CE2 | Rohm Semiconductor |
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на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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BD93E11GWL-EVK-001 | Rohm Semiconductor |
![]() Packaging: Bulk Function: USB PD Controller (Power Delivery) Type: Power Management Contents: Board(s), Cable(s) Utilized IC / Part: BD93E11 Supplied Contents: Board(s), Cable(s) Secondary Attributes: On-Board LEDs Embedded: No Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BD93E11GWL-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-UFBGA, CSPBGA Function: Controller Interface: I2C Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V Current - Supply: 190µA Protocol: USB Supplier Device Package: UCSP50L2C Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD93E11GWL-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 36-UFBGA, CSPBGA Function: Controller Interface: I2C Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V Current - Supply: 190µA Protocol: USB Supplier Device Package: UCSP50L2C Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2533 шт: термін постачання 21-31 дні (днів) |
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QH8KC5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KC5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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QH8KC6TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KC6TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
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RV4E031RPHZGTCR1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-6W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RV4E031RPHZGTCR1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-6W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5601 шт: термін постачання 21-31 дні (днів) |
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BAW56HYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
BAW56HYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 24.61 грн |
21+ | 14.60 грн |
100+ | 8.61 грн |
500+ | 6.75 грн |
1000+ | 6.06 грн |
ESR03EZPF51R0 |
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Виробник: Rohm Semiconductor
Description: RES 51 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 51 Ohms
Description: RES 51 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 51 Ohms
на замовлення 79350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.64 грн |
10000+ | 1.40 грн |
15000+ | 1.32 грн |
25000+ | 1.16 грн |
35000+ | 1.15 грн |
ESR03EZPF51R0 |
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Виробник: Rohm Semiconductor
Description: RES 51 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 51 Ohms
Description: RES 51 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 51 Ohms
на замовлення 79423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.11 грн |
56+ | 5.50 грн |
101+ | 3.05 грн |
1000+ | 1.80 грн |
2500+ | 1.61 грн |
ESR18EZPJ513 |
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Виробник: Rohm Semiconductor
Description: RES 51K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 kOhms
Description: RES 51K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 kOhms
на замовлення 19135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.29 грн |
43+ | 7.19 грн |
64+ | 4.80 грн |
100+ | 3.85 грн |
500+ | 2.79 грн |
1000+ | 2.46 грн |
BM6249FS-E2 |
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Виробник: Rohm Semiconductor
Description: THIS 3-PHASE BRUSHLESS FAN MOTOR
Packaging: Tape & Reel (TR)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: PWM
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 400V
Applications: Fan Motor Driver
Technology: NMOS
Voltage - Load: 600V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: THIS 3-PHASE BRUSHLESS FAN MOTOR
Packaging: Tape & Reel (TR)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: PWM
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 400V
Applications: Fan Motor Driver
Technology: NMOS
Voltage - Load: 600V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 529.33 грн |
BM6249FS-E2 |
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Виробник: Rohm Semiconductor
Description: THIS 3-PHASE BRUSHLESS FAN MOTOR
Packaging: Cut Tape (CT)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: PWM
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 400V
Applications: Fan Motor Driver
Technology: NMOS
Voltage - Load: 600V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: THIS 3-PHASE BRUSHLESS FAN MOTOR
Packaging: Cut Tape (CT)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: PWM
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 400V
Applications: Fan Motor Driver
Technology: NMOS
Voltage - Load: 600V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1194.01 грн |
10+ | 803.71 грн |
25+ | 713.45 грн |
100+ | 574.09 грн |
ESR03EZPJ1R0 |
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Виробник: Rohm Semiconductor
Description: RES 1 OHM 5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 1 Ohms
Description: RES 1 OHM 5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 1 Ohms
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.27 грн |
10000+ | 1.11 грн |
15000+ | 1.05 грн |
25000+ | 0.93 грн |
35000+ | 0.90 грн |
50000+ | 0.87 грн |
EMB59T2R |
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Виробник: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
товару немає в наявності
В кошику
од. на суму грн.
EMB59T2R |
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Виробник: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
на замовлення 6880 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.55 грн |
14+ | 23.01 грн |
100+ | 13.03 грн |
500+ | 8.10 грн |
1000+ | 6.21 грн |
2000+ | 5.40 грн |
EMD72T2R |
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Виробник: Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 4.79 грн |
EMD72T2R |
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Виробник: Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 18647 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.79 грн |
17+ | 18.81 грн |
100+ | 9.48 грн |
500+ | 7.26 грн |
1000+ | 5.39 грн |
2000+ | 4.53 грн |
EMD52T2R |
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Виробник: Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 4.66 грн |
EMD52T2R |
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Виробник: Rohm Semiconductor
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.40 грн |
21+ | 15.06 грн |
100+ | 9.45 грн |
500+ | 6.56 грн |
1000+ | 5.82 грн |
2000+ | 5.19 грн |
UMB3NFHATN |
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Виробник: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
UMB3NFHATN |
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Виробник: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Description: PNP+PNP DIGITAL TRANSISTOR (WITH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2549 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.02 грн |
23+ | 13.53 грн |
100+ | 8.46 грн |
500+ | 5.86 грн |
1000+ | 5.19 грн |
UMH4NFHATN |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.31 грн |
UMH4NFHATN |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5969 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.14 грн |
14+ | 23.39 грн |
100+ | 11.79 грн |
500+ | 9.80 грн |
1000+ | 7.63 грн |
DTA013ZMT2L |
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Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товару немає в наявності
В кошику
од. на суму грн.
DTA013ZMT2L |
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Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
на замовлення 7647 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
UMD25NTR |
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Виробник: Rohm Semiconductor
Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.36 грн |
6000+ | 5.99 грн |
UMD25NTR |
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Виробник: Rohm Semiconductor
Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
Description: UMD25N IS A DIGITAL TRANSISTOR C
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
на замовлення 11840 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.58 грн |
16+ | 19.72 грн |
100+ | 9.92 грн |
500+ | 8.25 грн |
1000+ | 6.42 грн |
DTA123EMFHAT2L |
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Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товару немає в наявності
В кошику
од. на суму грн.
DTA123EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 7640 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.05 грн |
21+ | 15.21 грн |
100+ | 8.08 грн |
500+ | 4.99 грн |
1000+ | 3.39 грн |
2000+ | 3.06 грн |
DTA024XMT2L |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товару немає в наявності
В кошику
од. на суму грн.
DTA024XMT2L |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
DTC043XUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику
од. на суму грн.
DTC043XUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 38 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.47 грн |
23+ | 13.84 грн |
DTC043XMT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику
од. на суму грн.
DTC043XMT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 7732 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.64 грн |
19+ | 16.28 грн |
100+ | 8.64 грн |
500+ | 5.33 грн |
1000+ | 3.63 грн |
2000+ | 3.27 грн |
DTA123JMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
DTA123JMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.64 грн |
23+ | 13.46 грн |
100+ | 6.56 грн |
500+ | 5.14 грн |
1000+ | 3.57 грн |
2000+ | 3.09 грн |
DTA143XMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику
од. на суму грн.
DTA143XMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 272 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.05 грн |
21+ | 15.21 грн |
100+ | 8.08 грн |
DTC124XMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
DTC124XMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 7630 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.67 грн |
32+ | 9.79 грн |
100+ | 6.03 грн |
500+ | 4.14 грн |
1000+ | 3.65 грн |
2000+ | 3.23 грн |
DTC123ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
DTC123ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
на замовлення 2912 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.37 грн |
18+ | 17.28 грн |
100+ | 7.21 грн |
SP8M4HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
SP8M4HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 1968 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 170.69 грн |
10+ | 136.92 грн |
100+ | 109.02 грн |
500+ | 86.57 грн |
1000+ | 73.45 грн |
TFZGTR18B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW TUMD2
Description: DIODE ZENER 18V 500MW TUMD2
на замовлення 101 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BZX84B6V2LYFHT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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BZX84B6V2LYFHT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: 250MW, 6.2V, SOT-23, AUTOMOTIVE
Tolerance: ±1.94%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
на замовлення 2719 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 22.23 грн |
24+ | 13.15 грн |
100+ | 6.25 грн |
500+ | 5.25 грн |
1000+ | 4.63 грн |
BD60910GU-E2 |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR RGLTR PWM 24VCSP
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA, CSPBGA
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25.6mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: VCSP85H3
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Not For New Designs
Description: IC LED DRVR RGLTR PWM 24VCSP
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA, CSPBGA
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25.6mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: VCSP85H3
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Not For New Designs
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SDR03EZPF4301 |
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Виробник: Rohm Semiconductor
Description: RES SMD 4.3 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.3 kOhms
Description: RES SMD 4.3 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.3 kOhms
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P02SCT3040KR-EVK-001 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR SCT3040KR
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: SCT3040KR
Supplied Contents: Board(s)
Primary Attributes: Overvoltage Protection
Part Status: Not For New Designs
Description: EVAL BOARD FOR SCT3040KR
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: SCT3040KR
Supplied Contents: Board(s)
Primary Attributes: Overvoltage Protection
Part Status: Not For New Designs
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од. на суму грн.
EMH51T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 4.75 грн |
DTC123YCAHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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DTC123YCAHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 1786 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.50 грн |
38+ | 8.26 грн |
100+ | 5.11 грн |
500+ | 3.49 грн |
1000+ | 3.07 грн |
BD42754FP2-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-5
Description: IC REG LINEAR 5V 500MA TO263-5
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од. на суму грн.
BD42754FP2-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-5
Description: IC REG LINEAR 5V 500MA TO263-5
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 199.27 грн |
BD93E11GWL-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD93E11
Packaging: Bulk
Function: USB PD Controller (Power Delivery)
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD93E11
Supplied Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR BD93E11
Packaging: Bulk
Function: USB PD Controller (Power Delivery)
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD93E11
Supplied Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 16655.06 грн |
BD93E11GWL-E2 |
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Виробник: Rohm Semiconductor
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
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BD93E11GWL-E2 |
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Виробник: Rohm Semiconductor
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPE-C POWER DELIVERY CONTRO
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, CSPBGA
Function: Controller
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 3.1V ~ 5.5V, 3.67V ~ 22V, 4.9V ~ 5.5V
Current - Supply: 190µA
Protocol: USB
Supplier Device Package: UCSP50L2C
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2533 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 474.75 грн |
10+ | 351.89 грн |
25+ | 325.70 грн |
100+ | 278.54 грн |
250+ | 265.61 грн |
500+ | 257.83 грн |
1000+ | 247.29 грн |
QH8KC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8KC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 87.33 грн |
10+ | 52.75 грн |
100+ | 34.68 грн |
QH8KC6TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8KC6TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 131.79 грн |
10+ | 80.50 грн |
100+ | 53.95 грн |
500+ | 39.96 грн |
1000+ | 36.53 грн |
RV4E031RPHZGTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
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од. на суму грн.
RV4E031RPHZGTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5601 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 92.09 грн |
10+ | 55.58 грн |
100+ | 36.60 грн |
500+ | 26.69 грн |
1000+ | 24.22 грн |