Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102213) > Сторінка 932 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
LM2904EYFVM-CTR | Rohm Semiconductor |
Description: EMARMOUR AUTOMOTIVE EXCELLENT EMPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 150°C Current - Supply: 600µA Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V |
на замовлення 2818 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LM2904EYF-CE2 | Rohm Semiconductor |
Description: EMARMOUR AUTOMOTIVE EXCELLENT EMPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 150°C Current - Supply: 600µA Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LM2904EYF-CE2 | Rohm Semiconductor |
Description: EMARMOUR AUTOMOTIVE EXCELLENT EMPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 150°C Current - Supply: 600µA Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V |
на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BD00HA3MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LIN POS ADJ 300MA 8HTSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BD00HA5MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LIN POS ADJ 500MA 8HTSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BU16024KV-E2 | Rohm Semiconductor |
Description: IC SWITCH HDMI VQFP48Packaging: Tape & Reel (TR) Package / Case: 48-LQFP Mounting Type: Surface Mount Function: Switch Voltage - Supply: 3V ~ 3.6V Applications: Consumer Video Standards: HDMI 1.3a Supplier Device Package: 48-VQFPC (7x7) Part Status: Not For New Designs Control Interface: I2C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SDR03EZPD30R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 30 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SDR03EZPD30R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 30 Ohms |
на замовлення 9380 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SDR03EZPD3003 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 300 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SDR03EZPD3003 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 300 kOhms |
на замовлення 8620 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LM2903EYFJ-CE2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open-Collector, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-SOP-J Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LM2903EYFJ-CE2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open-Collector, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-SOP-J Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
LM2903EYFVM-CTR | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
LM2903EYFVM-CTR | Rohm Semiconductor |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| LTR100JZPF2202 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR: HIGH-P |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LTR100JZPF2202 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR: HIGH-P |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q134B-NNNTD07GL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q136B-NNNTD07FL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q135B-NNNTD07GL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q135B-NNNTD07FL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q134B-NNNTD07FL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
R6504KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 5V @ 130µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
R6504KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 5V @ 130µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
R6504ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
R6504ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 4A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
на замовлення 92 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
R6515KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 15A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
R6515KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 15A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
R6507KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 7A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 200µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
R6507KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 7A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 200µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
R6509ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 9A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
R6509ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 9A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SFR01MZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SFR01MZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SFR03EZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SFR03EZPJ150 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 9790 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MNR04MRAPJ150 | Rohm Semiconductor |
Description: RES ARRAY 4 RES 15 OHM 0804Packaging: Cut Tape (CT) Resistance (Ohms): 15 Tolerance: ±5% Power Per Element: 62.5mW Circuit Type: Isolated Number of Pins: 8 Package / Case: 0804, Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C Height - Seated (Max): 0.020" (0.50mm) Number of Resistors: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RB168VAM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RB168VAM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2M |
на замовлення 695 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SDR10EZPJ2R4 | Rohm Semiconductor |
Description: RES 2.4 OHM 5% 1/2W 0805Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 2.4 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SDR10EZPJ2R4 | Rohm Semiconductor |
Description: RES 2.4 OHM 5% 1/2W 0805Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 2.4 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SDR03EZPJ2R4 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SDR03EZPJ2R4 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 9900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SFR03EZPJ2R4 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SFR03EZPJ2R4 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 9897 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBR20T60ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 10A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ10RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RBQ10RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
на замовлення 1476 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ10RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RBQ10RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 3839 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ5RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RBQ5RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
на замовлення 3967 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ3RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ3RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ5RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ5RSM65BTFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RBQ3RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RBQ3RSM65BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 65V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DTC143EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTC143EE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 2180 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RB706F-40T106 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 30MA UMD3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30mA Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
| LM2904EYFVM-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Current - Supply: 600µA
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Current - Supply: 600µA
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
на замовлення 2818 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.51 грн |
| 10+ | 105.53 грн |
| 25+ | 88.99 грн |
| 100+ | 65.90 грн |
| 250+ | 57.26 грн |
| 500+ | 51.94 грн |
| 1000+ | 46.70 грн |
| LM2904EYF-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Current - Supply: 600µA
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Current - Supply: 600µA
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| LM2904EYF-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Current - Supply: 600µA
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Description: EMARMOUR AUTOMOTIVE EXCELLENT EM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Current - Supply: 600µA
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.51 грн |
| 10+ | 105.53 грн |
| 25+ | 88.99 грн |
| 100+ | 65.90 грн |
| 250+ | 57.26 грн |
| 500+ | 51.94 грн |
| 1000+ | 46.70 грн |
| BD00HA3MEFJ-ME2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ 300MA 8HTSOP
Description: IC REG LIN POS ADJ 300MA 8HTSOP
товару немає в наявності
В кошику
од. на суму грн.
| BD00HA5MEFJ-ME2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ 500MA 8HTSOP
Description: IC REG LIN POS ADJ 500MA 8HTSOP
товару немає в наявності
В кошику
од. на суму грн.
| BU16024KV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC SWITCH HDMI VQFP48
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Switch
Voltage - Supply: 3V ~ 3.6V
Applications: Consumer Video
Standards: HDMI 1.3a
Supplier Device Package: 48-VQFPC (7x7)
Part Status: Not For New Designs
Control Interface: I2C
Description: IC SWITCH HDMI VQFP48
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Switch
Voltage - Supply: 3V ~ 3.6V
Applications: Consumer Video
Standards: HDMI 1.3a
Supplier Device Package: 48-VQFPC (7x7)
Part Status: Not For New Designs
Control Interface: I2C
товару немає в наявності
В кошику
од. на суму грн.
| SDR03EZPD30R0 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.48 грн |
| SDR03EZPD30R0 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30 Ohms
на замовлення 9380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.12 грн |
| 41+ | 8.01 грн |
| 60+ | 5.45 грн |
| 100+ | 4.41 грн |
| 500+ | 3.24 грн |
| 1000+ | 2.87 грн |
| SDR03EZPD3003 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.48 грн |
| SDR03EZPD3003 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
на замовлення 8620 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.12 грн |
| 41+ | 8.01 грн |
| 60+ | 5.45 грн |
| 100+ | 4.41 грн |
| 500+ | 3.24 грн |
| 1000+ | 2.87 грн |
| LM2903EYFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 48.78 грн |
| LM2903EYFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.05 грн |
| 10+ | 98.98 грн |
| 25+ | 93.94 грн |
| 100+ | 72.42 грн |
| 250+ | 67.69 грн |
| 500+ | 59.82 грн |
| 1000+ | 46.45 грн |
| LM2903EYFVM-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| LM2903EYFVM-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.61 грн |
| 10+ | 105.53 грн |
| 25+ | 100.11 грн |
| 100+ | 77.19 грн |
| 250+ | 72.15 грн |
| 500+ | 63.77 грн |
| 1000+ | 49.52 грн |
| LTR100JZPF2202 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
Description: HIGH POWER CHIP RESISTOR: HIGH-P
товару немає в наявності
В кошику
од. на суму грн.
| LTR100JZPF2202 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
Description: HIGH POWER CHIP RESISTOR: HIGH-P
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q134B-NNNTD07GL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q136B-NNNTD07FL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q135B-NNNTD07GL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q135B-NNNTD07FL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML620Q134B-NNNTD07FL |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| R6504KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6504KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.51 грн |
| 10+ | 140.47 грн |
| R6504ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6504ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.51 грн |
| 10+ | 140.47 грн |
| R6515KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6515KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 500.51 грн |
| 10+ | 323.47 грн |
| R6507KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6507KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.71 грн |
| 10+ | 210.09 грн |
| R6509ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6509ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.93 грн |
| 10+ | 203.46 грн |
| SFR01MZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 0.89 грн |
| SFR01MZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.40 грн |
| 44+ | 7.36 грн |
| 116+ | 2.81 грн |
| 1000+ | 1.16 грн |
| 2500+ | 1.00 грн |
| 5000+ | 0.90 грн |
| SFR03EZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.99 грн |
| SFR03EZPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9790 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.40 грн |
| 44+ | 7.36 грн |
| 116+ | 2.81 грн |
| 1000+ | 1.16 грн |
| 2500+ | 1.00 грн |
| MNR04MRAPJ150 |
![]() |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 15 OHM 0804
Packaging: Cut Tape (CT)
Resistance (Ohms): 15
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 0804, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C
Height - Seated (Max): 0.020" (0.50mm)
Number of Resistors: 4
Description: RES ARRAY 4 RES 15 OHM 0804
Packaging: Cut Tape (CT)
Resistance (Ohms): 15
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 0804, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C
Height - Seated (Max): 0.020" (0.50mm)
Number of Resistors: 4
товару немає в наявності
В кошику
од. на суму грн.
| RB168VAM-30TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
товару немає в наявності
В кошику
од. на суму грн.
| RB168VAM-30TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
на замовлення 695 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.07 грн |
| 14+ | 23.94 грн |
| 100+ | 16.29 грн |
| 500+ | 11.47 грн |
| SDR10EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.16 грн |
| SDR10EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.48 грн |
| 22+ | 15.28 грн |
| 100+ | 5.97 грн |
| 1000+ | 2.35 грн |
| 2500+ | 2.15 грн |
| SDR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.99 грн |
| SDR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.40 грн |
| 44+ | 7.36 грн |
| 116+ | 2.81 грн |
| 1000+ | 1.16 грн |
| 2500+ | 1.00 грн |
| SFR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.97 грн |
| SFR03EZPJ2R4 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9897 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.20 грн |
| 118+ | 2.74 грн |
| 1000+ | 1.13 грн |
| 2500+ | 0.98 грн |
| RBR20T60ANZC9 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 160.40 грн |
| RBQ10RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
товару немає в наявності
В кошику
од. на суму грн.
| RBQ10RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.01 грн |
| 10+ | 80.30 грн |
| 100+ | 53.85 грн |
| 500+ | 39.87 грн |
| 1000+ | 36.44 грн |
| RBQ10RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RBQ10RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
на замовлення 3839 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.92 грн |
| 10+ | 87.01 грн |
| 100+ | 58.60 грн |
| 500+ | 43.54 грн |
| 1000+ | 39.85 грн |
| 2000+ | 36.74 грн |
| RBQ5RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
товару немає в наявності
В кошику
од. на суму грн.
| RBQ5RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
на замовлення 3967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.18 грн |
| 10+ | 53.45 грн |
| 100+ | 41.55 грн |
| 500+ | 33.05 грн |
| 1000+ | 26.92 грн |
| 2000+ | 25.34 грн |
| RBQ3RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 33.65 грн |
| RBQ3RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.46 грн |
| 10+ | 64.05 грн |
| 100+ | 49.85 грн |
| 500+ | 39.66 грн |
| 1000+ | 32.30 грн |
| 2000+ | 30.41 грн |
| RBQ5RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 33.65 грн |
| RBQ5RSM65BTFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.46 грн |
| 10+ | 64.05 грн |
| 100+ | 49.85 грн |
| 500+ | 39.66 грн |
| 1000+ | 32.30 грн |
| 2000+ | 30.41 грн |
| RBQ3RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
товару немає в наявності
В кошику
од. на суму грн.
| RBQ3RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.18 грн |
| 10+ | 53.45 грн |
| 100+ | 41.55 грн |
| 500+ | 33.05 грн |
| 1000+ | 26.92 грн |
| 2000+ | 25.34 грн |
| DTC143EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
| DTC143EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.51 грн |
| 24+ | 13.83 грн |
| 100+ | 8.62 грн |
| 500+ | 5.97 грн |
| 1000+ | 5.29 грн |
| RB706F-40T106 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ARR SCHOTT 40V 30MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.54 грн |
| 6000+ | 9.64 грн |
| 9000+ | 8.95 грн |

















