Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101744) > Сторінка 933 з 1696
| Фото | Назва | Виробник | Інформація |
Доступність |
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BAT54AHYFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 30V 200MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
на замовлення 1311 шт: термін постачання 21-31 дні (днів) |
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BR25A512F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR25A512F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 5914 шт: термін постачання 21-31 дні (днів) |
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BR25A256FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR25A256FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 3193 шт: термін постачання 21-31 дні (днів) |
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BR25A512FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25A512FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 1655 шт: термін постачання 21-31 дні (днів) |
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BR25A512FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25A512FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 2905 шт: термін постачання 21-31 дні (днів) |
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BR25A256FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25A256FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25A256F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25A256F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BM1P10CFJ-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM1P10 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SLR-342MGT32 | Rohm Semiconductor |
Description: LED GREEN DIFFUSED T-1 T/HPackaging: Cut Tape (CT) Package / Case: Radial Color: Green Mounting Type: Through Hole Millicandela Rating: 16mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Green Current - Test: 10mA Viewing Angle: 40° Height (Max): 5.40mm Wavelength - Dominant: 572nm Supplier Device Package: T-1 Lens Transparency: Diffused Part Status: Not For New Designs Lens Style: Round with Domed Top Lens Size: 3.10mm Dia |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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SLR-342MGT32 | Rohm Semiconductor |
Description: LED GREEN DIFFUSED T-1 T/HPackaging: Tape & Box (TB) Package / Case: Radial Color: Green Mounting Type: Through Hole Millicandela Rating: 16mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Green Current - Test: 10mA Viewing Angle: 40° Height (Max): 5.40mm Wavelength - Dominant: 572nm Supplier Device Package: T-1 Lens Transparency: Diffused Part Status: Not For New Designs Lens Style: Round with Domed Top Lens Size: 3.10mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ5RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ5RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V |
на замовлення 3809 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ3RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 2876 шт: термін постачання 21-31 дні (днів) |
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SML-D13WWT86A | Rohm Semiconductor |
Description: LED YELLOW 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 112mcd Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 0603 Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-D13WWT86A | Rohm Semiconductor |
Description: LED YELLOW 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 112mcd Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 0603 Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
на замовлення 2562 шт: термін постачання 21-31 дні (днів) |
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RGTH40TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A TO247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 144 W |
на замовлення 585 шт: термін постачання 21-31 дні (днів) |
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BD18IA5MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 500MA 8HTSOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.9V @ 500mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18IA5MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 500MA 8HTSOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.9V @ 500mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 700 µA |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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BD18GC0MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 1A 8HTSOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18GC0MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 1A 8HTSOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
на замовлення 229 шт: термін постачання 21-31 дні (днів) |
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BD18FD0WHFP-TR | Rohm Semiconductor |
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCUPackaging: Tape & Reel (TR) Package / Case: HRP-5 (5 Leads + Tab) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 2A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 32V Number of Regulators: 1 Supplier Device Package: HRP-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 55dB (120Hz) Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18FD0WHFP-TR | Rohm Semiconductor |
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCUPackaging: Cut Tape (CT) Package / Case: HRP-5 (5 Leads + Tab) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 2A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 32V Number of Regulators: 1 Supplier Device Package: HRP-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 55dB (120Hz) Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 1931 шт: термін постачання 21-31 дні (днів) |
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BD18HC5MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18HC5MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD18HA3MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LIN 1.8V 300MA 8HTSOP-J |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RB520S-40FHTE61 | Rohm Semiconductor |
Description: DIODE SCHOTTKY SMDPackaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RB520S-403TTE61 | Rohm Semiconductor |
Description: DIODE SCHOTTKY SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RJ1L12CGNTLL | Rohm Semiconductor |
Description: NCH 60V 120A POWER MOSFET: RJ1L1 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RJ1L12CGNTLL | Rohm Semiconductor |
Description: NCH 60V 120A POWER MOSFET: RJ1L1 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 30A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 30A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RBQ30T45ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO220FNPackaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Current - Reverse Leakage @ Vr: 450 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ30T45ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Current - Reverse Leakage @ Vr: 450 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCT3120AW7TL | Rohm Semiconductor |
Description: SICFET N-CH 650V 21A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Supplier Device Package: TO-263-7 Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
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RBE2EA20ATR | Rohm Semiconductor |
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBE2EA20ATR | Rohm Semiconductor |
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S |
на замовлення 1952 шт: термін постачання 21-31 дні (днів) |
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RB551VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA Current - Reverse Leakage @ Vr: 300 µA @ 40 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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BR25G320FVM-3GTR | Rohm Semiconductor |
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25G320FVM-3GTR | Rohm Semiconductor |
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
на замовлення 2707 шт: термін постачання 21-31 дні (днів) |
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R6020KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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R6020ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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R6020JNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFPackaging: Bag Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020FNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A LPTPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Power Dissipation (Max): 304W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020KNZ1C9 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020JNZC8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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R6020ANZFL1C8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.15V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020ANZ8U7C8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.15V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| R6020ENZM12C8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RB095T-90NZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 6A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BD6346FV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 20SSOP |
товару немає в наявності |
В кошику од. на суму грн. |
| BAT54AHYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 1311 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.73 грн |
| 14+ | 23.75 грн |
| 100+ | 17.38 грн |
| 500+ | 12.36 грн |
| 1000+ | 11.08 грн |
| BR25A512F-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 62.03 грн |
| BR25A512F-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 5914 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.87 грн |
| 10+ | 101.12 грн |
| 25+ | 98.23 грн |
| 50+ | 90.13 грн |
| 100+ | 88.08 грн |
| 250+ | 85.36 грн |
| 500+ | 81.93 грн |
| 1000+ | 79.93 грн |
| BR25A256FJ-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 64.69 грн |
| BR25A256FJ-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.76 грн |
| 10+ | 69.43 грн |
| 25+ | 67.53 грн |
| 50+ | 61.97 грн |
| 100+ | 60.59 грн |
| 250+ | 58.74 грн |
| 500+ | 56.40 грн |
| 1000+ | 55.03 грн |
| BR25A512FJ-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BR25A512FJ-3MGE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 1655 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.87 грн |
| 10+ | 101.12 грн |
| 25+ | 98.23 грн |
| 50+ | 90.13 грн |
| 100+ | 88.08 грн |
| 250+ | 85.36 грн |
| 500+ | 81.93 грн |
| 1000+ | 79.93 грн |
| BR25A512FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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| BR25A512FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2905 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.87 грн |
| 10+ | 101.12 грн |
| 25+ | 98.23 грн |
| 50+ | 90.13 грн |
| 100+ | 88.08 грн |
| 250+ | 85.36 грн |
| 500+ | 81.93 грн |
| 1000+ | 79.93 грн |
| BR25A256FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8TSSOP
Description: IC EEPROM 256KBIT SPI 8TSSOP
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| BR25A256FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8TSSOP
Description: IC EEPROM 256KBIT SPI 8TSSOP
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| BR25A256F-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
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| BR25A256F-3MGE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
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| BM1P10CFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM1P10
Description: EVAL BOARD FOR BM1P10
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 19591.74 грн |
| SLR-342MGT32 |
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Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED T-1 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 16mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 5.40mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1
Lens Transparency: Diffused
Part Status: Not For New Designs
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
Description: LED GREEN DIFFUSED T-1 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 16mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 5.40mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1
Lens Transparency: Diffused
Part Status: Not For New Designs
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.73 грн |
| 12+ | 27.29 грн |
| 100+ | 15.68 грн |
| SLR-342MGT32 |
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Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 16mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 5.40mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1
Lens Transparency: Diffused
Part Status: Not For New Designs
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
Description: LED GREEN DIFFUSED T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 16mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 5.40mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1
Lens Transparency: Diffused
Part Status: Not For New Designs
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
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| RBQ5RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
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| RBQ5RSM10BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 3809 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.26 грн |
| 10+ | 66.92 грн |
| 100+ | 50.33 грн |
| 500+ | 37.19 грн |
| 1000+ | 33.95 грн |
| 2000+ | 31.23 грн |
| RBQ3RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
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| RBQ3RSM10BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 2876 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.38 грн |
| 10+ | 57.40 грн |
| 100+ | 43.54 грн |
| 500+ | 31.98 грн |
| 1000+ | 29.12 грн |
| 2000+ | 26.71 грн |
| SML-D13WWT86A |
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Виробник: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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| SML-D13WWT86A |
![]() |
Виробник: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
на замовлення 2562 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.28 грн |
| 14+ | 24.06 грн |
| 100+ | 15.48 грн |
| 500+ | 11.36 грн |
| 1000+ | 10.39 грн |
| RGTH40TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
на замовлення 585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 308.67 грн |
| 10+ | 199.50 грн |
| 100+ | 166.95 грн |
| BD18IA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
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| BD18IA5MEFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
на замовлення 222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.35 грн |
| 10+ | 117.87 грн |
| 25+ | 99.65 грн |
| 100+ | 74.18 грн |
| BD18GC0MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
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| BD18GC0MEFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
на замовлення 229 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.93 грн |
| 10+ | 167.34 грн |
| 25+ | 142.64 грн |
| 100+ | 107.68 грн |
| BD18FD0WHFP-TR |
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Виробник: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Tape & Reel (TR)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Tape & Reel (TR)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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| BD18FD0WHFP-TR |
![]() |
Виробник: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Cut Tape (CT)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Cut Tape (CT)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 1931 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.39 грн |
| 10+ | 162.77 грн |
| 25+ | 138.71 грн |
| 100+ | 104.59 грн |
| 250+ | 92.02 грн |
| 500+ | 84.30 грн |
| 1000+ | 76.55 грн |
| BD18HC5MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
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| BD18HC5MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.69 грн |
| 10+ | 97.19 грн |
| 25+ | 92.29 грн |
| 100+ | 71.15 грн |
| 250+ | 66.51 грн |
| 500+ | 58.77 грн |
| 1000+ | 45.64 грн |
| BD18HA3MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
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| RB520S-40FHTE61 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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| RB520S-403TTE61 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Description: DIODE SCHOTTKY SMD
товару немає в наявності
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| RJ1L12CGNTLL |
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Виробник: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
Description: NCH 60V 120A POWER MOSFET: RJ1L1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 260.73 грн |
| RJ1L12CGNTLL |
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Виробник: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
Description: NCH 60V 120A POWER MOSFET: RJ1L1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 494.04 грн |
| 10+ | 426.83 грн |
| 100+ | 349.71 грн |
| 500+ | 279.38 грн |
| RBQ30NS100AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 113.19 грн |
| 2000+ | 102.63 грн |
| RBQ30NS100AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.85 грн |
| 10+ | 177.01 грн |
| 100+ | 143.20 грн |
| 500+ | 119.46 грн |
| RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
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| RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
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| SCT3120AW7TL |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Description: SICFET N-CH 650V 21A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
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од. на суму грн.
| TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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| TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 202.52 грн |
| 10+ | 122.51 грн |
| 25+ | 103.64 грн |
| 100+ | 77.28 грн |
| 250+ | 67.47 грн |
| 500+ | 61.43 грн |
| 1000+ | 55.45 грн |
| RBE2EA20ATR |
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Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
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| RBE2EA20ATR |
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Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
на замовлення 1952 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 10+ | 41.44 грн |
| 100+ | 30.90 грн |
| 500+ | 22.79 грн |
| 1000+ | 17.61 грн |
| RB551VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.03 грн |
| 16+ | 20.76 грн |
| 100+ | 10.49 грн |
| 500+ | 8.03 грн |
| 1000+ | 5.96 грн |
| BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2707 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.65 грн |
| 10+ | 38.30 грн |
| 25+ | 37.30 грн |
| 50+ | 34.27 грн |
| 100+ | 33.53 грн |
| 250+ | 32.54 грн |
| 500+ | 31.26 грн |
| 1000+ | 30.52 грн |
| R6020KNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.19 грн |
| R6020ENZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 507.92 грн |
| 30+ | 279.29 грн |
| 120+ | 233.09 грн |
| 510+ | 186.98 грн |
| R6020JNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.64 грн |
| 10+ | 215.22 грн |
| R6020ENZC17 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 440.14 грн |
| 30+ | 230.19 грн |
| 120+ | 214.12 грн |
| R6020FNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 304W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: MOSFET N-CH 600V 20A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 304W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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| R6020KNZ1C9 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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од. на суму грн.
| R6020JNZC8 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 658.99 грн |
| 10+ | 432.81 грн |
| R6020ANZFL1C8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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| R6020ANZ8U7C8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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од. на суму грн.
| R6020ENZM12C8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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| RB095T-90NZC9 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.52 грн |
| 50+ | 118.88 грн |
| 100+ | 97.81 грн |
| 500+ | 77.67 грн |
| 1000+ | 65.91 грн |
| BD6346FV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
Description: IC MOTOR DRIVER 20SSOP
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