Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103512) > Сторінка 933 з 1726
| Фото | Назва | Виробник | Інформація |
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RB048RSM10STL1 | Rohm Semiconductor |
Description: 100V 8A, TO-277GE, ULTRA LOW IRCurrent - Reverse Leakage @ Vr: 3.4 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3912 шт: термін постачання 21-31 дні (днів) |
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RB088RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277ACurrent - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB088RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277ATechnology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A |
на замовлення 3798 шт: термін постачання 21-31 дні (днів) |
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RB078RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277ACurrent - Reverse Leakage @ Vr: 1.3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB078RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277AMounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 3820 шт: термін постачання 21-31 дні (днів) |
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RB088RSM10STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB088RSM10STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3460 шт: термін постачання 21-31 дні (днів) |
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UT6J3TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 3A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPF1001 | Rohm Semiconductor |
Description: RES 1 KOHM 1% 1/8W 0805Resistance: 1 kOhms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Anti-Sulfur Tolerance: ±1% Power (Watts): 0.125W, 1/8W Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPF1001 | Rohm Semiconductor |
Description: RES 1 KOHM 1% 1/8W 0805Resistance: 1 kOhms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Anti-Sulfur Tolerance: ±1% Power (Watts): 0.125W, 1/8W Packaging: Cut Tape (CT) |
на замовлення 18626 шт: термін постачання 21-31 дні (днів) |
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RD3P130SPTL1 | Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RD3P130SPTL1 | Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
на замовлення 1983 шт: термін постачання 21-31 дні (днів) |
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| RB161SS-207HFT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 1A KMD2 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: KMD2 Operating Temperature - Junction: 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BU7233SF-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOPPart Status: Active CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Current - Output (Typ): 6mA @ 3V Current - Input Bias (Max): 1pA @ 3V Voltage - Input Offset (Max): 11mV @ 3V Current - Quiescent (Max): 25µA Propagation Delay (Max): 1.8µs Supplier Device Package: 8-SOP Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Operating Temperature: -40°C ~ 105°C Type: CMOS Number of Elements: 2 Mounting Type: Surface Mount Output Type: CMOS, Open-Drain Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BU7233SF-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOPPart Status: Active CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Current - Output (Typ): 6mA @ 3V Current - Input Bias (Max): 1pA @ 3V Voltage - Input Offset (Max): 11mV @ 3V Current - Quiescent (Max): 25µA Propagation Delay (Max): 1.8µs Supplier Device Package: 8-SOP Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Operating Temperature: -40°C ~ 105°C Type: CMOS Number of Elements: 2 Mounting Type: Surface Mount Output Type: CMOS, Open-Drain Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DTC114TE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC114TE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RGTH80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 70A TO247GPower - Max: 234 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Gate Charge: 79 nC Test Condition: 400V, 40A, 10Ohm, 15V Td (on/off) @ 25°C: 34ns/120ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247G Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Reverse Recovery Time (trr): 236 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 593 шт: термін постачання 21-31 дні (днів) |
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RGWS80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 71A TO247GOperating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Switching Energy: 700µJ (on), 660µJ (off) Td (on/off) @ 25°C: 40ns/114ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247G Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Reverse Recovery Time (trr): 88 ns Input Type: Standard Power - Max: 202 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 71 A Gate Charge: 83 nC Test Condition: 400V, 40A, 10Ohm, 15V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGS80TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 73A TO-247NPower - Max: 272 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 73 A Gate Charge: 48 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.05mJ (on), 1.03mJ (off) Td (on/off) @ 25°C: 37ns/112ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Reverse Recovery Time (trr): 103 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 254 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPower - Max: 404 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 114 A Gate Charge: 79 nC Test Condition: 400V, 75A, 10Ohm, 15V Switching Energy: 3.32mJ (on), 1.9mJ (off) Td (on/off) @ 25°C: 43ns/113ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Reverse Recovery Time (trr): 114 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGWS00TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 88A TO-247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 46ns/145ns Switching Energy: 980µJ (on), 910µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 108 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 245 W |
на замовлення 565 шт: термін постачання 21-31 дні (днів) |
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RGTH00TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 85A TO247GPower - Max: 277 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 85 A Gate Charge: 94 nC Test Condition: 400V, 50A, 10Ohm, 15V Td (on/off) @ 25°C: 39ns/143ns IGBT Type: Trench Field Stop Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Supplier Device Package: TO-247G Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Reverse Recovery Time (trr): 54 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) |
на замовлення 591 шт: термін постачання 21-31 дні (днів) |
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RGWX5TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 132A TO247NCurrent - Collector Pulsed (Icm): 300 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 132 A Gate Charge: 213 nC Test Condition: 400V, 75A, 10Ohm, 15V Switching Energy: 2.39mJ (on), 1.68mJ (off) Td (on/off) @ 25°C: 64ns/229ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Reverse Recovery Time (trr): 101 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 348 W |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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RGT80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 70A TO-247GPower - Max: 234 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Part Status: Active Gate Charge: 79 nC Test Condition: 400V, 40A, 10Ohm, 15V Td (on/off) @ 25°C: 34ns/119ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247G Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Reverse Recovery Time (trr): 236 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGT00TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 85A TO247G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RGTH50TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 50A TO247GPower - Max: 174 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A Gate Charge: 49 nC Test Condition: 400V, 25A, 10Ohm, 15V Td (on/off) @ 25°C: 27ns/94ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247G Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGT40TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A TO247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 144 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGWX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 132A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 62ns/237ns Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 213 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 348 W |
на замовлення 332 шт: термін постачання 21-31 дні (днів) |
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RGW00TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/186ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 141 nC Part Status: Active Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 254 W |
на замовлення 425 шт: термін постачання 21-31 дні (днів) |
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RGW80TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 80A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/148ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 214 W |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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RGT50TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A TO-247NPower - Max: 174 W Current - Collector Pulsed (Icm): 75 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 48 A Part Status: Not For New Designs Gate Charge: 49 nC Test Condition: 400V, 25A, 10Ohm, 15V Td (on/off) @ 25°C: 27ns/88ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFR18EZPF1503 | Rohm Semiconductor |
Description: RES 150K OHM 1% 1/4W 1206Resistance: 150 kOhms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1206 (3216 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.25W, 1/4W Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPF1503 | Rohm Semiconductor |
Description: RES 150K OHM 1% 1/4W 1206Resistance: 150 kOhms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1206 (3216 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.25W, 1/4W Packaging: Cut Tape (CT) |
на замовлення 9950 шт: термін постачання 21-31 дні (днів) |
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BD7281YG-CTR | Rohm Semiconductor |
Description: NANO CAP, LOW NOISE & INPUT/OUTPQualification: AEC-Q100 Grade: Automotive Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 1 Part Status: Active Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Slew Rate: 10V/µs Current - Supply: 1.7mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Supplier Device Package: 5-SSOP Voltage - Input Offset: 10 µV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 7 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD7281YG-CTR | Rohm Semiconductor |
Description: NANO CAP, LOW NOISE & INPUT/OUTPQualification: AEC-Q100 Grade: Automotive Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 50 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: 5-SSOP Voltage - Input Offset: 10 µV Current - Input Bias: 0.5 pA Gain Bandwidth Product: 7 MHz Slew Rate: 10V/µs Current - Supply: 1.7mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2284 шт: термін постачання 21-31 дні (днів) |
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RS6R035BHTB1 | Rohm Semiconductor |
Description: NCH 150V 35A, HSOP8, POWER MOSFEInput Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 3W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS6R035BHTB1 | Rohm Semiconductor |
Description: NCH 150V 35A, HSOP8, POWER MOSFERds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 3W (Ta), 73W (Tc) |
на замовлення 2354 шт: термін постачання 21-31 дні (днів) |
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BD82A26MUF-ME2 | Rohm Semiconductor |
Description: NANO CAP, WHITE LED DRIVER FOR APart Status: Active Voltage - Supply (Max): 48V Voltage - Supply (Min): 3V Dimming: Analog, PWM Supplier Device Package: VQFN32FBV050 Topology: Step-Up (Boost) Internal Switch(s): No Current - Output / Channel: 150mA Applications: Backlight Operating Temperature: -40°C ~ 125°C (TA) Type: DC DC Regulator Frequency: 270kHz ~ 2.42MHz Number of Outputs: 6 Mounting Type: Surface Mount, Wettable Flank Voltage - Output: 50V Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD82A26MUF-ME2 | Rohm Semiconductor |
Description: NANO CAP, WHITE LED DRIVER FOR APart Status: Active Voltage - Supply (Max): 48V Voltage - Supply (Min): 3V Dimming: Analog, PWM Supplier Device Package: VQFN32FBV050 Topology: Step-Up (Boost) Internal Switch(s): No Current - Output / Channel: 150mA Applications: Backlight Operating Temperature: -40°C ~ 125°C (TA) Type: DC DC Regulator Frequency: 270kHz ~ 2.42MHz Number of Outputs: 6 Mounting Type: Surface Mount, Wettable Flank Voltage - Output: 50V Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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RCJ160N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 16A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RCJ160N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 16A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RR264MM-400TFTR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 700MA PMDUPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 700mA Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 19334 шт: термін постачання 21-31 дні (днів) |
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BD69740FV-GE2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 16SSOPB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD69740FV-GE2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 16SSOPB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD6971FS-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 0V-7V 16SSOPA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD6973FV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPBTechnology: NMOS, PMOS Applications: Fan Controller Voltage - Supply: 4.3V ~ 17V Output Configuration: Pre-Driver - Half Bridge (2) Operating Temperature: -40°C ~ 100°C Interface: PWM Current - Output: 12mA Function: Controller - Speed Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Motor Type - AC, DC: Brushless DC (BLDC) Motor Type - Stepper: Bipolar Supplier Device Package: 16-SSOP-B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD6974FV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD63800MUF-EVK-002 | Rohm Semiconductor |
Description: EVAL BOARD FOR BD63800Embedded: Yes Secondary Attributes: On-Board Test Points Primary Attributes: 6V ~ 28V Supply Utilized IC / Part: BD63800 Contents: Board(s), Cable(s) Type: Power Management Function: Motor Controller/Driver, Stepper Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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VS54VLNVWMTR | Rohm Semiconductor |
Description: 54V 200W, COMPACT AND HIGHLY RELPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS54VLNVWMTR | Rohm Semiconductor |
Description: 54V 200W, COMPACT AND HIGHLY RELPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 1628 шт: термін постачання 21-31 дні (днів) |
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VS54VLNVWMTFTR | Rohm Semiconductor |
Description: TVS DIODE 54VWM 87.1VC PMDEPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS54VLNVWMTFTR | Rohm Semiconductor |
Description: TVS DIODE 54VWM 87.1VC PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 2757 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD68R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD68R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 9915 шт: термін постачання 21-31 дні (днів) |
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BH1900NUX-EVK-001 | Rohm Semiconductor |
Description: TEMPERATURE SENSOR EVALUATION BOPackaging: Bulk Sensitivity: ±3°C Interface: 2-Wire Serial Contents: Board(s) Voltage - Supply: 2.7V ~ 3.6V Sensor Type: Temperature Utilized IC / Part: BH1900 Embedded: No Sensing Range: -30°C ~ 95°C |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| DSK9J01Q0L | Rohm Semiconductor | Description: TRANS JFET N-CH 30MA SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RBR5L60ADDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 5A PMDSCurrent - Reverse Leakage @ Vr: 250 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: 150°C Supplier Device Package: PMDS Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR5L60ADDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 5A PMDSVoltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: 150°C Supplier Device Package: PMDS Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 250 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A |
на замовлення 284 шт: термін постачання 21-31 дні (днів) |
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RBR20NS40ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 10A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A Current - Reverse Leakage @ Vr: 240 µA @ 40 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| RB048RSM10STL1 |
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Виробник: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3912 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.45 грн |
| 10+ | 67.81 грн |
| 100+ | 52.74 грн |
| 500+ | 41.95 грн |
| 1000+ | 34.18 грн |
| 2000+ | 32.17 грн |
| RB088RSM10STL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RB088RSM10STL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Description: DIODE SCHOTTKY 100V 10A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
на замовлення 3798 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.69 грн |
| 10+ | 78.47 грн |
| 100+ | 59.40 грн |
| 500+ | 45.46 грн |
| 1000+ | 40.46 грн |
| 2000+ | 37.50 грн |
| RB078RSM10STL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 5A TO277A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RB078RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE SCHOTTKY 100V 5A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 3820 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.94 грн |
| 10+ | 58.43 грн |
| 100+ | 43.14 грн |
| 500+ | 31.77 грн |
| 1000+ | 28.97 грн |
| 2000+ | 27.89 грн |
| RB088RSM10STFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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| RB088RSM10STFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.90 грн |
| 10+ | 99.50 грн |
| 100+ | 68.67 грн |
| 500+ | 51.38 грн |
| 1000+ | 47.18 грн |
| 2000+ | 43.64 грн |
| UT6J3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.58 грн |
| 10+ | 44.57 грн |
| 100+ | 29.12 грн |
| 500+ | 21.09 грн |
| 1000+ | 19.08 грн |
| SFR10EZPF1001 |
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Виробник: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.56 грн |
| 10000+ | 1.40 грн |
| SFR10EZPF1001 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
на замовлення 18626 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 28+ | 10.97 грн |
| 53+ | 5.81 грн |
| 100+ | 4.04 грн |
| 500+ | 2.44 грн |
| 1000+ | 1.69 грн |
| RD3P130SPTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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| RD3P130SPTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1983 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.18 грн |
| 10+ | 112.53 грн |
| 100+ | 77.02 грн |
| 500+ | 58.01 грн |
| 1000+ | 53.77 грн |
| RB161SS-207HFT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| BU7233SF-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 34.58 грн |
| 5000+ | 32.49 грн |
| BU7233SF-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.00 грн |
| 10+ | 50.21 грн |
| 25+ | 45.32 грн |
| 100+ | 37.53 грн |
| 250+ | 35.13 грн |
| 500+ | 33.69 грн |
| 1000+ | 31.97 грн |
| DTC114TE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.90 грн |
| DTC114TE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.78 грн |
| 26+ | 11.96 грн |
| 100+ | 7.47 грн |
| 500+ | 5.18 грн |
| 1000+ | 4.58 грн |
| RGTH80TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 70A TO247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 593 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 503.97 грн |
| 10+ | 327.98 грн |
| 100+ | 238.66 грн |
| RGWS80TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Switching Energy: 700µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 40ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 88 ns
Input Type: Standard
Power - Max: 202 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 71 A
Gate Charge: 83 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Description: IGBT TRENCH FS 650V 71A TO247G
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Switching Energy: 700µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 40ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 88 ns
Input Type: Standard
Power - Max: 202 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 71 A
Gate Charge: 83 nC
Test Condition: 400V, 40A, 10Ohm, 15V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 354.44 грн |
| 30+ | 198.44 грн |
| RGS80TS65DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 73A TO-247N
Power - Max: 272 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 73 A
Gate Charge: 48 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 37ns/112ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 103 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 73A TO-247N
Power - Max: 272 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 73 A
Gate Charge: 48 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 37ns/112ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 103 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 570.43 грн |
| 30+ | 291.31 грн |
| 120+ | 274.97 грн |
| RGSX5TS65DHRC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 114 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 114 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 534.03 грн |
| 30+ | 410.44 грн |
| 120+ | 380.33 грн |
| RGWS00TS65DGC13 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
на замовлення 565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 477.86 грн |
| 30+ | 264.90 грн |
| 120+ | 221.90 грн |
| 510+ | 178.68 грн |
| RGTH00TS65DGC13 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Power - Max: 277 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Reverse Recovery Time (trr): 54 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Description: IGBT TRNCH FIELD 650V 85A TO247G
Power - Max: 277 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Reverse Recovery Time (trr): 54 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
на замовлення 591 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 552.23 грн |
| 10+ | 360.89 грн |
| 100+ | 264.06 грн |
| RGWX5TS65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Gate Charge: 213 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 64ns/229ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Reverse Recovery Time (trr): 101 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 348 W
Description: IGBT TRENCH FLD 650V 132A TO247N
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Gate Charge: 213 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 64ns/229ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Reverse Recovery Time (trr): 101 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 348 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 459.67 грн |
| 30+ | 279.70 грн |
| RGT80TS65DGC13 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 70A TO-247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/119ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 70A TO-247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/119ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 595.75 грн |
| 10+ | 398.00 грн |
| 100+ | 395.12 грн |
| RGT00TS65DGC13 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Description: IGBT TRNCH FIELD 650V 85A TO247G
товару немає в наявності
В кошику
од. на суму грн.
| RGTH50TS65DGC13 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 50A TO247G
Power - Max: 174 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/94ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 50A TO247G
Power - Max: 174 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/94ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 319.63 грн |
| 10+ | 206.92 грн |
| 100+ | 172.96 грн |
| RGT40TS65DGC13 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 503.97 грн |
| 30+ | 315.97 грн |
| RGWX5TS65DHRC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
на замовлення 332 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 451.75 грн |
| 10+ | 372.85 грн |
| RGW00TS65DHRC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
на замовлення 425 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 459.67 грн |
| 10+ | 303.37 грн |
| RGW80TS65DHRC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 420.11 грн |
| 10+ | 275.87 грн |
| RGT50TS65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-247N
Power - Max: 174 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 48 A
Part Status: Not For New Designs
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/88ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 48A TO-247N
Power - Max: 174 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 48 A
Part Status: Not For New Designs
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/88ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SFR18EZPF1503 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.57 грн |
| SFR18EZPF1503 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
на замовлення 9950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 38+ | 8.23 грн |
| 54+ | 5.65 грн |
| 100+ | 4.57 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.97 грн |
| BD7281YG-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
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| BD7281YG-CTR |
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Виробник: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 192.25 грн |
| 10+ | 116.34 грн |
| 25+ | 98.40 грн |
| 100+ | 73.32 грн |
| 250+ | 63.97 грн |
| 500+ | 58.22 грн |
| 1000+ | 52.53 грн |
| RS6R035BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| RS6R035BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
на замовлення 2354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 208.87 грн |
| 10+ | 130.66 грн |
| 100+ | 90.40 грн |
| 500+ | 71.12 грн |
| BD82A26MUF-ME2 |
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Виробник: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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| BD82A26MUF-ME2 |
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Виробник: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 348.90 грн |
| 10+ | 256.21 грн |
| 25+ | 236.27 грн |
| 100+ | 201.14 грн |
| 250+ | 191.32 грн |
| 500+ | 185.41 грн |
| 1000+ | 177.58 грн |
| RCJ160N20TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 54.86 грн |
| RCJ160N20TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RR264MM-400TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 19334 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.27 грн |
| 16+ | 19.50 грн |
| 100+ | 13.30 грн |
| 500+ | 9.38 грн |
| 1000+ | 8.38 грн |
| BD69740FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
Description: IC MOTOR DRIVER 16SSOPB
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| BD69740FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
Description: IC MOTOR DRIVER 16SSOPB
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| BD6971FS-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 0V-7V 16SSOPA
Description: IC MOTOR DRIVER 0V-7V 16SSOPA
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| BD6973FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Technology: NMOS, PMOS
Applications: Fan Controller
Voltage - Supply: 4.3V ~ 17V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -40°C ~ 100°C
Interface: PWM
Current - Output: 12mA
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-SSOP-B
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Technology: NMOS, PMOS
Applications: Fan Controller
Voltage - Supply: 4.3V ~ 17V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -40°C ~ 100°C
Interface: PWM
Current - Output: 12mA
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-SSOP-B
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| BD6974FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
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| BD63800MUF-EVK-002 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD63800
Embedded: Yes
Secondary Attributes: On-Board Test Points
Primary Attributes: 6V ~ 28V Supply
Utilized IC / Part: BD63800
Contents: Board(s), Cable(s)
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
Description: EVAL BOARD FOR BD63800
Embedded: Yes
Secondary Attributes: On-Board Test Points
Primary Attributes: 6V ~ 28V Supply
Utilized IC / Part: BD63800
Contents: Board(s), Cable(s)
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18171.43 грн |
| VS54VLNVWMTR |
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Виробник: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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| VS54VLNVWMTR |
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Виробник: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 1628 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.18 грн |
| 10+ | 30.55 грн |
| 100+ | 21.24 грн |
| 500+ | 15.56 грн |
| 1000+ | 12.65 грн |
| VS54VLNVWMTFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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| VS54VLNVWMTFTR |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 2757 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 10+ | 32.30 грн |
| 100+ | 22.14 грн |
| 500+ | 16.42 грн |
| 1000+ | 14.97 грн |
| SDR03EZPD68R0 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.11 грн |
| SDR03EZPD68R0 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 21+ | 14.93 грн |
| 100+ | 5.82 грн |
| 1000+ | 2.29 грн |
| 2500+ | 2.10 грн |
| BH1900NUX-EVK-001 |
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Виробник: Rohm Semiconductor
Description: TEMPERATURE SENSOR EVALUATION BO
Packaging: Bulk
Sensitivity: ±3°C
Interface: 2-Wire Serial
Contents: Board(s)
Voltage - Supply: 2.7V ~ 3.6V
Sensor Type: Temperature
Utilized IC / Part: BH1900
Embedded: No
Sensing Range: -30°C ~ 95°C
Description: TEMPERATURE SENSOR EVALUATION BO
Packaging: Bulk
Sensitivity: ±3°C
Interface: 2-Wire Serial
Contents: Board(s)
Voltage - Supply: 2.7V ~ 3.6V
Sensor Type: Temperature
Utilized IC / Part: BH1900
Embedded: No
Sensing Range: -30°C ~ 95°C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2096.58 грн |
| DSK9J01Q0L |
Виробник: Rohm Semiconductor
Description: TRANS JFET N-CH 30MA SMD
Description: TRANS JFET N-CH 30MA SMD
товару немає в наявності
В кошику
од. на суму грн.
| RBR5L60ADDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 60V 5A PMDS
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| RBR5L60ADDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Description: DIODE SCHOTTKY 60V 5A PMDS
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
на замовлення 284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.29 грн |
| 10+ | 49.90 грн |
| 100+ | 38.80 грн |
| RBR20NS40ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 53.34 грн |













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