Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102055) > Сторінка 933 з 1701
| Фото | Назва | Виробник | Інформація |
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2SAR583D3FRATL | Rohm Semiconductor |
Description: PNP, TO-252 (DPAK), -50V -7A, PO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SAR583D3FRATL | Rohm Semiconductor |
Description: PNP, TO-252 (DPAK), -50V -7A, PO |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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BD81849MUV-CE2 | Rohm Semiconductor |
Description: GAMMA VOLTAGE GENERATED IC WITHPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.1V ~ 18V Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver Current - Supply: 6mA Supplier Device Package: VQFN32SV5050 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD81849MUV-CE2 | Rohm Semiconductor |
Description: GAMMA VOLTAGE GENERATED IC WITHPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.1V ~ 18V Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver Current - Supply: 6mA Supplier Device Package: VQFN32SV5050 Part Status: Active |
на замовлення 2475 шт: термін постачання 21-31 дні (днів) |
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MMBZ27VALFHT116 | Rohm Semiconductor |
Description: TVS DIODE 22VWM 40VC SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 42pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BR24S08FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BR24S08F-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFR01MZPF2323 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPF2323 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BD63801EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: Parallel Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 28V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 28V Supplier Device Package: 24-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD63801EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 24HTSSOPPackaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: Parallel Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 28V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 28V Supplier Device Package: 24-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RXL035N03TCR | Rohm Semiconductor |
Description: NCH 30V 3..5A SMALL SIGNAL MOSFEPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 910mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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RTM002P02T2L | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: VMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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VT6Z1T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A 6VMT |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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VT6Z1T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A 6VMT |
на замовлення 15924 шт: термін постачання 21-31 дні (днів) |
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QH8KA3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KA3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 2305 шт: термін постачання 21-31 дні (днів) |
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QH8KB6TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 8A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8KB6TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 8A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
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QH8JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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QH8JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 11750 шт: термін постачання 21-31 дні (днів) |
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CSL0902DT1C | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 710mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia Grade: Automotive Qualification: AEC-Q102 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0902DT1C | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 710mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia Grade: Automotive Qualification: AEC-Q102 |
на замовлення 668 шт: термін постачання 21-31 дні (днів) |
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CSL0902DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 560mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0902DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 560mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1807 шт: термін постачання 21-31 дні (днів) |
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RB068VWM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 60 V |
на замовлення 2352 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-30TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A Current - Reverse Leakage @ Vr: 600 nA @ 30 V |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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RB068VWM150TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 2938 шт: термін постачання 21-31 дні (днів) |
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RB068VWM100TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 4398 шт: термін постачання 21-31 дні (днів) |
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RB068VWM150TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 2564 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-40TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 40 V |
на замовлення 1513 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-60TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 60 V |
на замовлення 5402 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 40 V |
на замовлення 5744 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.32mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
на замовлення 393 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 116 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.44mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65EGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 114A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 116 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.44mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
на замовлення 419 шт: термін постачання 21-31 дні (днів) |
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RB480Y-90FHT2R | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 90V 100MA EMD4Packaging: Tape & Reel (TR) Package / Case: SC-75-4, SOT-543 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD4 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 90 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB480KTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTTKY 40V UMD4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SML-D22YVWT86 | Rohm Semiconductor |
Description: 2-COLOR TYPE MINI-MOLD CHIP LED: |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SML-D22YVWT86 | Rohm Semiconductor |
Description: 2-COLOR TYPE MINI-MOLD CHIP LED: |
на замовлення 2825 шт: термін постачання 21-31 дні (днів) |
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RV5A040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RV5A040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A DFN1616-6Packaging: Cut Tape (CT) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
на замовлення 5995 шт: термін постачання 21-31 дні (днів) |
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YFZVFHTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 7.99V 500MW TUMD2MPackaging: Tape & Reel (TR) Tolerance: ±2.57% Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.99 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: TUMD2M Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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YFZVFHTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 7.99V 500MW TUMD2MPackaging: Cut Tape (CT) Tolerance: ±2.57% Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.99 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: TUMD2M Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 5574 шт: термін постачання 21-31 дні (днів) |
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| RPI-574 | Rohm Semiconductor |
Description: SENSOR OPT SLOT PHOTOTRAN PCB MTPackaging: Bulk Package / Case: PCB Mount Sensing Distance: 0.197" (5mm) Sensing Method: Through-Beam Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C Output Configuration: Phototransistor Response Time: 10µs, 10µs Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 30 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RS3E075ATTB1 | Rohm Semiconductor |
Description: PCH -30V -7.5A MIDDLE POWER MOSF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS3E075ATTB1 | Rohm Semiconductor |
Description: PCH -30V -7.5A MIDDLE POWER MOSF |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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RH6P040BHTB1 | Rohm Semiconductor |
Description: NCH 100V 40A, HSMT8, POWER MOSFE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RH6P040BHTB1 | Rohm Semiconductor |
Description: NCH 100V 40A, HSMT8, POWER MOSFE |
на замовлення 5970 шт: термін постачання 21-31 дні (днів) |
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RD3L07BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 115A, TO-252, POWER MOSFPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RD3L07BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 115A, TO-252, POWER MOSFPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF5103 | Rohm Semiconductor |
Description: RES 510K OHM 1% 1/2W 0805Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 510 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR10EZPF5103 | Rohm Semiconductor |
Description: RES 510K OHM 1% 1/2W 0805Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 510 kOhms |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
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R6507ENXC7G | Rohm Semiconductor |
Description: 650V 7A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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RV5C040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 4A DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RV5C040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 4A DFN1616-6Packaging: Cut Tape (CT) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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RSB6.8JS2T2R | Rohm Semiconductor |
Description: LOW CAPACITANCE ZENER DIODE : ROPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: EMD6 Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RSB6.8JS2T2R | Rohm Semiconductor |
Description: LOW CAPACITANCE ZENER DIODE : ROPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: EMD6 Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RSB6.8CST2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM VMN2 |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SAR583D3FRATL |
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Виробник: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -50V -7A, PO
Description: PNP, TO-252 (DPAK), -50V -7A, PO
товару немає в наявності
В кошику
од. на суму грн.
| 2SAR583D3FRATL |
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Виробник: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -50V -7A, PO
Description: PNP, TO-252 (DPAK), -50V -7A, PO
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.34 грн |
| 10+ | 181.89 грн |
| 100+ | 146.20 грн |
| 500+ | 112.73 грн |
| 1000+ | 93.40 грн |
| BD81849MUV-CE2 |
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Виробник: Rohm Semiconductor
Description: GAMMA VOLTAGE GENERATED IC WITH
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.1V ~ 18V
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Current - Supply: 6mA
Supplier Device Package: VQFN32SV5050
Part Status: Active
Description: GAMMA VOLTAGE GENERATED IC WITH
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.1V ~ 18V
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Current - Supply: 6mA
Supplier Device Package: VQFN32SV5050
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BD81849MUV-CE2 |
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Виробник: Rohm Semiconductor
Description: GAMMA VOLTAGE GENERATED IC WITH
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.1V ~ 18V
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Current - Supply: 6mA
Supplier Device Package: VQFN32SV5050
Part Status: Active
Description: GAMMA VOLTAGE GENERATED IC WITH
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.1V ~ 18V
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Current - Supply: 6mA
Supplier Device Package: VQFN32SV5050
Part Status: Active
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 319.35 грн |
| 10+ | 232.98 грн |
| 25+ | 214.40 грн |
| 100+ | 182.05 грн |
| 250+ | 172.92 грн |
| 500+ | 167.41 грн |
| 1000+ | 160.21 грн |
| MMBZ27VALFHT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 40VC SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BR24S08FVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
товару немає в наявності
В кошику
од. на суму грн.
| BR24S08F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
товару немає в наявності
В кошику
од. на суму грн.
| SFR01MZPF2323 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.13 грн |
| SFR01MZPF2323 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.22 грн |
| 36+ | 9.35 грн |
| 100+ | 3.58 грн |
| 1000+ | 1.48 грн |
| 2500+ | 1.28 грн |
| 5000+ | 1.14 грн |
| BD63801EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 168.75 грн |
| BD63801EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 332.98 грн |
| 10+ | 243.48 грн |
| 25+ | 224.27 грн |
| 100+ | 190.58 грн |
| 250+ | 181.11 грн |
| 500+ | 175.39 грн |
| 1000+ | 167.90 грн |
| RXL035N03TCR |
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Виробник: Rohm Semiconductor
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 910mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 910mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.90 грн |
| 10+ | 57.24 грн |
| 100+ | 37.56 грн |
| 500+ | 27.36 грн |
| 1000+ | 24.81 грн |
| RTM002P02T2L |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 9.68 грн |
| VT6Z1T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
Description: TRANS NPN/PNP 20V 0.2A 6VMT
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 8.39 грн |
| VT6Z1T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
Description: TRANS NPN/PNP 20V 0.2A 6VMT
на замовлення 15924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.03 грн |
| 12+ | 28.95 грн |
| 100+ | 18.05 грн |
| 500+ | 11.59 грн |
| 1000+ | 8.92 грн |
| 2000+ | 8.03 грн |
| QH8KA3TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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В кошику
од. на суму грн.
| QH8KA3TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 2305 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.45 грн |
| 10+ | 66.83 грн |
| 100+ | 47.74 грн |
| 500+ | 34.48 грн |
| 1000+ | 30.35 грн |
| QH8KB6TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 40V 8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 35.52 грн |
| QH8KB6TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 40V 8A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.01 грн |
| 10+ | 67.65 грн |
| 100+ | 52.63 грн |
| 500+ | 41.86 грн |
| 1000+ | 34.10 грн |
| QH8JC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 35.45 грн |
| 6000+ | 31.83 грн |
| 9000+ | 31.65 грн |
| QH8JC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 11750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.29 грн |
| 10+ | 79.71 грн |
| 100+ | 53.55 грн |
| 500+ | 39.72 грн |
| 1000+ | 36.35 грн |
| CSL0902DT1C |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
товару немає в наявності
В кошику
од. на суму грн.
| CSL0902DT1C |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
на замовлення 668 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.47 грн |
| 14+ | 25.09 грн |
| 100+ | 18.03 грн |
| 500+ | 13.95 грн |
| CSL0902DT1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
| CSL0902DT1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.92 грн |
| 15+ | 22.80 грн |
| 100+ | 16.37 грн |
| 500+ | 12.61 грн |
| 1000+ | 11.71 грн |
| RB068VWM100TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.61 грн |
| 10+ | 35.51 грн |
| 100+ | 23.34 грн |
| 500+ | 16.68 грн |
| 1000+ | 15.00 грн |
| RB068VWM-60TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
на замовлення 2352 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.42 грн |
| 10+ | 40.51 грн |
| 100+ | 27.38 грн |
| 500+ | 19.69 грн |
| 1000+ | 17.76 грн |
| RB068VWM-30TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Description: DIODE SCHOTTKY 30V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.46 грн |
| 10+ | 37.23 грн |
| 100+ | 26.74 грн |
| 500+ | 19.22 грн |
| 1000+ | 17.32 грн |
| RB068VWM150TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 40.84 грн |
| 100+ | 27.06 грн |
| 500+ | 19.46 грн |
| 1000+ | 17.54 грн |
| RB068VWM100TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 4398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.46 грн |
| 10+ | 37.23 грн |
| 100+ | 26.74 грн |
| 500+ | 19.22 грн |
| 1000+ | 17.32 грн |
| RB068VWM150TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 2564 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.32 грн |
| 10+ | 36.08 грн |
| 100+ | 23.67 грн |
| 500+ | 16.93 грн |
| 1000+ | 15.22 грн |
| RB068VWM-40TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
на замовлення 1513 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 41.33 грн |
| 100+ | 26.74 грн |
| 500+ | 19.22 грн |
| 1000+ | 17.32 грн |
| RB068VWM-60TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
на замовлення 5402 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.17 грн |
| 10+ | 36.66 грн |
| 100+ | 23.96 грн |
| 500+ | 17.14 грн |
| 1000+ | 15.42 грн |
| RB068VWM-40TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
на замовлення 5744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.61 грн |
| 10+ | 35.34 грн |
| 100+ | 23.34 грн |
| 500+ | 16.68 грн |
| 1000+ | 15.00 грн |
| RGSX5TS65HRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 393 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 525.44 грн |
| 30+ | 325.95 грн |
| RGSX5TS65EHRC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 619.11 грн |
| 30+ | 475.72 грн |
| 120+ | 440.81 грн |
| RGSX5TS65EGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 419 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 401.10 грн |
| 30+ | 217.40 грн |
| 120+ | 180.13 грн |
| RB480Y-90FHT2R |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| RB480KTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 40V UMD4
Description: DIODE ARRAY SCHOTTKY 40V UMD4
товару немає в наявності
В кошику
од. на суму грн.
| SML-D22YVWT86 |
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Виробник: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
товару немає в наявності
В кошику
од. на суму грн.
| SML-D22YVWT86 |
![]() |
Виробник: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 56.21 грн |
| 10+ | 35.67 грн |
| 100+ | 23.62 грн |
| 1000+ | 17.11 грн |
| RV5A040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 25.15 грн |
| RV5A040APTCR1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.71 грн |
| 10+ | 57.49 грн |
| 100+ | 38.66 грн |
| 500+ | 28.66 грн |
| 1000+ | 25.56 грн |
| YFZVFHTR8.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.06 грн |
| YFZVFHTR8.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
на замовлення 5574 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.62 грн |
| 16+ | 21.57 грн |
| 100+ | 13.65 грн |
| 500+ | 9.57 грн |
| 1000+ | 8.52 грн |
| RPI-574 |
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Виробник: Rohm Semiconductor
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Packaging: Bulk
Package / Case: PCB Mount
Sensing Distance: 0.197" (5mm)
Sensing Method: Through-Beam
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Packaging: Bulk
Package / Case: PCB Mount
Sensing Distance: 0.197" (5mm)
Sensing Method: Through-Beam
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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од. на суму грн.
| RS3E075ATTB1 |
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Виробник: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Description: PCH -30V -7.5A MIDDLE POWER MOSF
товару немає в наявності
В кошику
од. на суму грн.
| RS3E075ATTB1 |
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Виробник: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Description: PCH -30V -7.5A MIDDLE POWER MOSF
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.12 грн |
| 10+ | 78.48 грн |
| 100+ | 61.21 грн |
| 500+ | 47.45 грн |
| 1000+ | 37.46 грн |
| RH6P040BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
Description: NCH 100V 40A, HSMT8, POWER MOSFE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 65.55 грн |
| RH6P040BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
Description: NCH 100V 40A, HSMT8, POWER MOSFE
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.07 грн |
| 10+ | 123.91 грн |
| 100+ | 99.59 грн |
| 500+ | 76.78 грн |
| 1000+ | 63.62 грн |
| RD3L07BBGTL1 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
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| RD3L07BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 250.37 грн |
| 10+ | 216.33 грн |
| 100+ | 173.87 грн |
| 500+ | 134.06 грн |
| 1000+ | 111.08 грн |
| SDR10EZPF5103 |
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Виробник: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
Description: RES 510K OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
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В кошику
од. на суму грн.
| SDR10EZPF5103 |
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Виробник: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
Description: RES 510K OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.59 грн |
| 34+ | 9.84 грн |
| 50+ | 6.77 грн |
| 100+ | 5.46 грн |
| 500+ | 4.01 грн |
| 1000+ | 3.55 грн |
| R6507ENXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.66 грн |
| 50+ | 85.61 грн |
| 100+ | 50.97 грн |
| RV5C040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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од. на суму грн.
| RV5C040APTCR1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.97 грн |
| 10+ | 56.75 грн |
| 100+ | 40.53 грн |
| 500+ | 31.02 грн |
| 1000+ | 26.30 грн |
| RSB6.8JS2T2R |
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Виробник: Rohm Semiconductor
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 21.97 грн |
| RSB6.8JS2T2R |
![]() |
Виробник: Rohm Semiconductor
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 56.21 грн |
| 10+ | 47.97 грн |
| 100+ | 36.76 грн |
| 500+ | 27.27 грн |
| 1000+ | 21.81 грн |
| 2000+ | 19.86 грн |
| RSB6.8CST2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
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