Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 100 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±5% J
Габарити: D<=5mm

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 100 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±10% K
Габарити: D<=5mm
Part Number: TSL2A101K-L515B

Виробник: Hitano
Керамічні SMD конденсатори > 1210
Ємність: 10 µF
Номін.напруга: 25 V
Діелектрик: X7R
Точність: ±10% K
Типорозмір: 1210

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 150 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±10% K
Габарити: D<=5mm
Part Number: TSL2A151K-L515B

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 220 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±10% K
Габарити: D<=5mm
Part Number: TSL2A221K-L515B

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 30 pF
Номін.напруга: 50 V
ТКЕ: P350~N1000
Точність: ±5% J
Габарити: D<=5,5mm

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 330 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±10% K
Габарити: D<=5mm
Part Number: TSL2A331K-L515B

Виробник: Hitano
Керамічні SMD конденсатори > 1812
Ємність: 4,7 µF
Номін.напруга: 25 V
Діелектрик: X7R
Точність: ±10% K
Типорозмір: 1812

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 470 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±10% K
Габарити: D<=5mm
Part Number: TSL2A471K-L515B

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 560 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±10% K
Габарити: D<=5mm
Part Number: TSL2A561K-L515B

Виробник: Hitano
Керамічні конденсатори вивідні > Дискові керамічні конденсатори
Ємність: 680 pF
Номін.напруга: 100 V
ТКЕ: P350~N1000
Точність: ±10% K
Габарити: D<=5mm
Part Number: TSL2A681K-L515B

TO-252

Виробник: UNICON
Category: C connectors
Description: Connector: C; plug; female; silver plated; Insulation: PTFE; 50Ω
Max. cable diameter: 10mm
Electrical mounting: clamp
Mechanical mounting: for cable
Spatial orientation: straight
Type of connector: C
Connector: plug
Kind of connector: female
Contact plating: silver plated
Insulator material: PTFE
Wave impedance: 50Ω
кількість в упаковці: 1 шт

Виробник: Analog Devices
Digital Isolators IC Robust 5 ch digitalI SO 5/0

Виробник: Analog Devices
Digital Isolator CMOS 5-CH 150Mbps 16-Pin SOIC N Tube

Виробник: Analog Devices Inc.
Description: DGTL ISO 3000VRMS 5CH GP 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.7V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 5/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.5ns, 2.5ns
Common Mode Transient Immunity (Min): 75kV/µs
Propagation Delay tpLH / tpHL (Max): 13ns, 13ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4.5ns
Number of Channels: 5

Виробник: Analog Devices Inc.
Description: DGTL ISO 5000VRMS 5CH GP 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.7V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 5/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.5ns, 2.5ns
Common Mode Transient Immunity (Min): 75kV/µs
Propagation Delay tpLH / tpHL (Max): 13ns, 13ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4.5ns
Part Status: Active
Number of Channels: 5

Виробник: Analog Devices
Digital Isolators Robust 5kV 5 CH Digital ISO 5/0

Виробник: Abracon LLC
Description: XTAL OSC VCXO 24.5760MHZ CMOS
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS, TTL
Function: Standby (Power Down)
Type: VCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.079" (2.00mm)
Frequency: 24.576 MHz
Base Resonator: Crystal

Виробник: EPCOS / TDK
Power Line Filters 3-LINE EMC FILTER 50A 520/300V

Виробник: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA 5.0V, FI
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.8V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100

Виробник: ROHM Semiconductor
Linear Voltage Regulators 150MA QUICUR NANO 45V 5.0V LD

Виробник: Rohm Semiconductor
Description: NANO CAP, QUICUR, 150MA 5.0V, FI
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)

Виробник: ROHM Semiconductor
LDO Voltage Regulators 150MA 5.0V LDO REGULATOR

Виробник: VELLEMAN
Category: Soldering tips
Description: Tip; conical; 0.5mm; for soldering station; VEL-VTSSC50N
Type of tip: for sold. irons with heating element
Tip shape: conical
Tip dimensions: 0.5mm
Applications of soldering equipment: for soldering station
Related items: VEL-VTSSC50N

Виробник: VELLEMAN
Category: Soldering tips
Description: Tip; conical; 0.5mm; for soldering station; VEL-VTSSC50N
Type of tip: for sold. irons with heating element
Tip shape: conical
Tip dimensions: 0.5mm
Applications of soldering equipment: for soldering station
Related items: VEL-VTSSC50N
кількість в упаковці: 1 шт

Виробник: Infineon Technologies
OptiMOS-5Power-Transistor, 100V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V

Виробник: Infineon Technologies
MOSFET TRENCH >=100V

Виробник: Infineon Technologies
MOSFET N-Ch 100V 40A TSDSON-8

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V

Виробник: Infineon Technologies
MOSFET N-Ch 100V 40A TSDSON-8

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V

Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 16.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15.6A
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3

Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 16.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15.6A
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
кількість в упаковці: 1 шт

Виробник: Ampleon USA Inc.
Description: RF MOSFET 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 5GHz
Gain: 19dB
Supplier Device Package: 6-DFN (4.5x4)
Part Status: Active
Voltage - Rated: 50 V

Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 320A; SOT227B; screw; Idm: 1.2kA
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -20...20V
Pulsed drain current: 1.2kA
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 320A
On-state resistance: 1.5mΩ
Power dissipation: 626W
кількість в упаковці: 1 шт

Виробник: Infineon Technologies
Discrete Semiconductor Modules 1600V 550A

Виробник: Infineon Technologies
Discrete Semiconductor Modules EASY STANDARD

Виробник: Infineon Technologies
Discrete Semiconductor Modules EASY STANDARD

Виробник: onsemi
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V

Виробник: onsemi / Fairchild
MOSFET 100V N-Channel PowerTrench

Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK

Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
кількість в упаковці: 1 шт

Виробник: onsemi
Description: MOSFET N-CH 100V 15.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 15.7A 3-Pin(2+Tab) DPAK T/R

Виробник: onsemi
Description: MOSFET N-CH 100V 15.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V

Виробник: onsemi / Fairchild
MOSFET 100V N-Channel PowerTrench MOSFET

Виробник: onsemi
Description: MOSFET N-CH 100V 57A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V

Виробник: onsemi / Fairchild
MOSFET 100V N-Channel PowerTrench

Виробник: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V

Виробник: onsemi
Description: MOSFET N-CH 100V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 150A Automotive 9-Pin(8+Tab) HSOF T/R

Виробник: Infineon Technologies
MOSFET MOSFET_(75V 120V(

Виробник: CARLO GAVAZZI
Category: DC Cylindrical Inductive Sensors
Description: Sensor: inductive; OUT: NPN / NO; 0÷10mm; 10÷36VDC; M12; IP67; 200mA
Operating temperature: -25...70°C
Range: 0...10mm
Output configuration: NPN / NO
Connection: lead 2m
Kind of forehead: non-embedded
Type of sensor: inductive
IP rating: IP67
Supply voltage: 10...36V DC
Max. operating current: 0.2A
Body material: nickel plated brass
Overall length: 71mm
Switching frequency max: 2kHz
Switch housing: M12
кількість в упаковці: 1 шт

Виробник: Carlo Gavazzi Inc.
Description: SENSOR PROX INDUCTIVE 10MM CYL
Packaging: Box
Package / Case: Cylinder, Threaded - M12
Output Type: NPN-NO, 4-Wire
Sensing Distance: 0.394" (10mm)
Shielding: Unshielded
Operating Temperature: -25°C ~ 70°C
Termination Style: Cable Leads
Voltage - Supply: 10V ~ 36V
Material - Body: Nickel-Plated Brass
Sensor Type: Inductive
Ingress Protection: IP67
Indicator: LED
Response Frequency: 2kHz
Part Status: Active

Виробник: CARLO GAVAZZI
Category: DC Cylindrical Inductive Sensors
Description: Sensor: inductive; OUT: PNP / NO; 0÷10mm; 10÷36VDC; M12; IP67; 200mA
Operating temperature: -25...70°C
Range: 0...10mm
Output configuration: PNP / NO
Connection: lead 2m
Kind of forehead: non-embedded
Type of sensor: inductive
IP rating: IP67
Supply voltage: 10...36V DC
Max. operating current: 0.2A
Body material: nickel plated brass
Overall length: 71mm
Switching frequency max: 2kHz
Switch housing: M12
кількість в упаковці: 1 шт

Виробник: CARLO GAVAZZI
Category: DC Cylindrical Inductive Sensors
Description: Sensor: inductive; OUT: PNP / NO; 0÷10mm; 10÷36VDC; M12; IP67; 200mA
Operating temperature: -25...70°C
Range: 0...10mm
Output configuration: PNP / NO
Connection: connector M12
Kind of forehead: non-embedded
Type of sensor: inductive
Number of pins: 4
IP rating: IP67
Supply voltage: 10...36V DC
Max. operating current: 0.2A
Body material: nickel plated brass
Overall length: 74mm
Switching frequency max: 2kHz
Switch housing: M12
кількість в упаковці: 1 шт