Результат пошуку "4n04" : > 180
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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30001194N040050010 | MITSUBISHI CHEMICAL ADV. MATERIALS |
Category: Plastic sheets Description: Sheet; Dim: 497x1000mm; Thk: 40mm; natural; 0.5m2 Colour: natural Width: 0.5m Material: plastic; polyetylene; polyetylene HD1000; TIVAR 1000 Length: 1m Thickness: 40mm Type of mounting element: sheet Dimensions: 497x1000mm Production process: ironing Dimensional tolerance: 0;+1mm Thickness tolerance: -0.2...+0.2mm Surface: 0.5m2 кількість в упаковці: 1 шт |
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72N4N048S203W | Honeywell | Precision Potentiometers INDUSTRIAL POTS |
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799-015TMJ04N04 | Glenair | D-Sub Backshells 11+ start 8 wks |
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930-004N04 | Glenair | Circular MIL Spec Tools, Hardware & Accessories GASKET NEOPRENE MATERIAL |
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A04-N045-B | Sumida | Flat Conductor Connectors |
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A14-N040-A | Sumida | A14-N040-A |
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BSB014N04LX3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Mounting: SMD Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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BSB014N04LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R |
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BSB014N04LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R |
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BSC014N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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BSC014N04LSATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP T/R |
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BSC014N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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BSC014N04LSIATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R |
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BSC014N04LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 33A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V |
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BSC054N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 40V Drain current: 81A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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BSC054N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 40V Drain current: 81A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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BSZ024N04LS6ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 24A 8-Pin TSDSON EP T/R |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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D04-N040-AB | Sumida | D04-N040-AB SUM |
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DCP4N042006BD2JSC9 | WIMA |
Description: DC-LINK MKP 4 2.0 F 900 VDC 11X2 Packaging: Bulk |
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DCP4N042006BD2JSSD | WIMA |
Description: DC-LINK MKP 4 2.0 F 900 VDC 11X2 Packaging: Bulk |
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DCP4N042006BD2KSC9 | WIMA |
Description: DC-LINK MKP 4 2.0 F 900 VDC 11X2 Packaging: Bulk |
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DCP4N042006BD2KSC9 | Wima | Cap Film 2uf 900V PP 10% (31.5x11x21mm) Screw Terminals 27.5mm DC Link 85C Bulk, 3.5mm Leads |
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DCP4N042006BD2KSSD | WIMA |
Description: DC-LINK MKP 4 2.0 F 900 VDC 11X2 Packaging: Bulk |
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DCP4N042006BD2MSC9 | WIMA |
Description: DC-LINK MKP 4 2.0 F 900 VDC 11X2 Packaging: Bulk |
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DCP4N042006BD2MSSD | WIMA |
Description: DC-LINK MKP 4 2.0 F 900 VDC 11X2 Packaging: Bulk |
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DCP4N042006BD2MY00 | Wima | Cap Film 2uf 900V PP 20% (31.5x11x21mm) Screw Terminals 27.5mm DC Link 85C Bulk |
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DCP4N043006DD2JSC9 | WIMA |
Description: DC-LINK MKP 4 3.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N043006DD2JSSD | Wima | DCP4N043006DD2JSSD |
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DCP4N043006DD2JSSD | WIMA |
Description: DC-LINK MKP 4 3.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N043006DD2KSC9 | WIMA |
Description: DC-LINK MKP 4 3.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N043006DD2KSSD | WIMA |
Description: DC-LINK MKP 4 3.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N043006DD2MSC9 | WIMA |
Description: DC-LINK MKP 4 3.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N043006DD2MSSD | WIMA |
Description: DC-LINK MKP 4 3.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N044006DD2JSC9 | Wima | Cap Film 4uF 900V PP 5% (31.5 X 13 X 24mm) Plastic Rectangular Can 27.5mm 105C Automotive Bulk |
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DCP4N044006DD2KSC9 | WIMA |
Description: DC-LINK MKP 4 4.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N044006DD2KSSD | WIMA |
Description: DC-LINK MKP 4 4.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N044006DD2MSSD | WIMA |
Description: DC-LINK MKP 4 4.0 F 900 VDC 13X2 Packaging: Bulk |
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DCP4N045006GD2JSSD | Wima | Cap Film 5uf 900V PP 5% (31.5x17x29mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads |
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DCP4N045006GD2KSSD | Wima | Cap Film 5uf 900V PP 10% (31.5x17x29mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads |
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DCP4N047006ID2KSC9 | Wima | Metallized Polypropylene Capacitors |
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DCP4N047006ID2KSSD | Wima | Cap Film 7uf 900V PP 10% (31.5x17x34.5mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads |
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DCP4N047006ID4KSSD | Wima | Cap Film 7uF 900V PP 10% (31.5 X 17 X 34.5mm) Plastic Rectangular Can 27.5mm 0.013 Ohm 105C Automotive Bulk |
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FDB024N04AL7 | ON Semiconductor | Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R |
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FDB024N04AL7 | onsemi |
Description: MOSFET N-CH 40V 100A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
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IPB014N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 38A 3-Pin(2+Tab) D2PAK T/R |
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IPB014N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V |
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LTS04N04KB5C | Honeywell | Linear Position Sensor 30V 1000MCycles Analog(Voltage) Output Medical 3-Pin |
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M85049/1714N04A | Glenair | Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 14 CLMP SZ 04 |
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M85049/1714N04B | Glenair | Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 14 CLMP SZ 04 |
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M85049/1724N04 | Amphenol Pcd | Circular MIL Spec Backshells BACKSHELL ENV EMI/ RFI ST NIC SZ 24 |
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M85049/1724N04 | Glenair | Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 24 CLMP SZ 04 |
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M85049/1724N04A | Glenair | Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 24 CLMP SZ 04 |
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M85049/2914N04A | Glenair | Circular MIL Spec Backshells NON ENV STRN RLF BS SH SZ 14 CLMP SZ 04 |
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M85049/2924N04 | Amphenol Pcd | Circular MIL Spec Backshells BACKSHELL NON ENV ST NICKEL SZ 24 |
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M85049/3624N04 | Glenair | Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI |
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M85049/3624N04A | Glenair | Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI |
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M85049/3624N04B | Glenair | Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI |
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M85049/3714N04D | Glenair | Circular MIL Spec Backshells R/A Backshell |
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30001194N040050010 |
Виробник: MITSUBISHI CHEMICAL ADV. MATERIALS
Category: Plastic sheets
Description: Sheet; Dim: 497x1000mm; Thk: 40mm; natural; 0.5m2
Colour: natural
Width: 0.5m
Material: plastic; polyetylene; polyetylene HD1000; TIVAR 1000
Length: 1m
Thickness: 40mm
Type of mounting element: sheet
Dimensions: 497x1000mm
Production process: ironing
Dimensional tolerance: 0;+1mm
Thickness tolerance: -0.2...+0.2mm
Surface: 0.5m2
кількість в упаковці: 1 шт
Category: Plastic sheets
Description: Sheet; Dim: 497x1000mm; Thk: 40mm; natural; 0.5m2
Colour: natural
Width: 0.5m
Material: plastic; polyetylene; polyetylene HD1000; TIVAR 1000
Length: 1m
Thickness: 40mm
Type of mounting element: sheet
Dimensions: 497x1000mm
Production process: ironing
Dimensional tolerance: 0;+1mm
Thickness tolerance: -0.2...+0.2mm
Surface: 0.5m2
кількість в упаковці: 1 шт
товар відсутній
930-004N04 |
Виробник: Glenair
Circular MIL Spec Tools, Hardware & Accessories GASKET NEOPRENE MATERIAL
Circular MIL Spec Tools, Hardware & Accessories GASKET NEOPRENE MATERIAL
товар відсутній
BSB014N04LX3GXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
BSB014N04LX3GXUMA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
товар відсутній
BSB014N04LX3GXUMA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
товар відсутній
BSC014N04LSATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
BSC014N04LSATMA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP T/R
товар відсутній
BSC014N04LSIATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
BSC014N04LSIATMA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R
товар відсутній
BSC014N04LSTATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
товар відсутній
BSC054N04NSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
BSC054N04NSGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
BSZ024N04LS6ATMA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 24A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 40V 24A 8-Pin TSDSON EP T/R
товар відсутній
BSZ034N04LSATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
BSZ034N04LSATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
DCP4N042006BD2JSC9 |
товар відсутній
DCP4N042006BD2JSSD |
товар відсутній
DCP4N042006BD2KSC9 |
товар відсутній
DCP4N042006BD2KSC9 |
Виробник: Wima
Cap Film 2uf 900V PP 10% (31.5x11x21mm) Screw Terminals 27.5mm DC Link 85C Bulk, 3.5mm Leads
Cap Film 2uf 900V PP 10% (31.5x11x21mm) Screw Terminals 27.5mm DC Link 85C Bulk, 3.5mm Leads
товар відсутній
DCP4N042006BD2KSSD |
товар відсутній
DCP4N042006BD2MSC9 |
товар відсутній
DCP4N042006BD2MSSD |
товар відсутній
DCP4N042006BD2MY00 |
Виробник: Wima
Cap Film 2uf 900V PP 20% (31.5x11x21mm) Screw Terminals 27.5mm DC Link 85C Bulk
Cap Film 2uf 900V PP 20% (31.5x11x21mm) Screw Terminals 27.5mm DC Link 85C Bulk
товар відсутній
DCP4N043006DD2JSC9 |
товар відсутній
DCP4N043006DD2JSSD |
товар відсутній
DCP4N043006DD2KSC9 |
товар відсутній
DCP4N043006DD2KSSD |
товар відсутній
DCP4N043006DD2MSC9 |
товар відсутній
DCP4N043006DD2MSSD |
товар відсутній
DCP4N044006DD2JSC9 |
Виробник: Wima
Cap Film 4uF 900V PP 5% (31.5 X 13 X 24mm) Plastic Rectangular Can 27.5mm 105C Automotive Bulk
Cap Film 4uF 900V PP 5% (31.5 X 13 X 24mm) Plastic Rectangular Can 27.5mm 105C Automotive Bulk
товар відсутній
DCP4N044006DD2KSC9 |
товар відсутній
DCP4N044006DD2KSSD |
товар відсутній
DCP4N044006DD2MSSD |
товар відсутній
DCP4N045006GD2JSSD |
Виробник: Wima
Cap Film 5uf 900V PP 5% (31.5x17x29mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads
Cap Film 5uf 900V PP 5% (31.5x17x29mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads
товар відсутній
DCP4N045006GD2KSSD |
Виробник: Wima
Cap Film 5uf 900V PP 10% (31.5x17x29mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads
Cap Film 5uf 900V PP 10% (31.5x17x29mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads
товар відсутній
DCP4N047006ID2KSSD |
Виробник: Wima
Cap Film 7uf 900V PP 10% (31.5x17x34.5mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads
Cap Film 7uf 900V PP 10% (31.5x17x34.5mm) Screw Terminals 27.5mm DC Link 85C Bulk, 6mm Leads
товар відсутній
DCP4N047006ID4KSSD |
Виробник: Wima
Cap Film 7uF 900V PP 10% (31.5 X 17 X 34.5mm) Plastic Rectangular Can 27.5mm 0.013 Ohm 105C Automotive Bulk
Cap Film 7uF 900V PP 10% (31.5 X 17 X 34.5mm) Plastic Rectangular Can 27.5mm 0.013 Ohm 105C Automotive Bulk
товар відсутній
FDB024N04AL7 |
Виробник: ON Semiconductor
Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R
Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R
товар відсутній
FDB024N04AL7 |
Виробник: onsemi
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
товар відсутній
IPB014N04NF2SATMA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 38A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 40V 38A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IPB014N04NF2SATMA1 |
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
товар відсутній
LTS04N04KB5C |
Виробник: Honeywell
Linear Position Sensor 30V 1000MCycles Analog(Voltage) Output Medical 3-Pin
Linear Position Sensor 30V 1000MCycles Analog(Voltage) Output Medical 3-Pin
товар відсутній
M85049/1714N04A |
Виробник: Glenair
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 14 CLMP SZ 04
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 14 CLMP SZ 04
товар відсутній
M85049/1714N04B |
Виробник: Glenair
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 14 CLMP SZ 04
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 14 CLMP SZ 04
товар відсутній
M85049/1724N04 |
Виробник: Amphenol Pcd
Circular MIL Spec Backshells BACKSHELL ENV EMI/ RFI ST NIC SZ 24
Circular MIL Spec Backshells BACKSHELL ENV EMI/ RFI ST NIC SZ 24
товар відсутній
M85049/1724N04 |
Виробник: Glenair
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 24 CLMP SZ 04
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 24 CLMP SZ 04
товар відсутній
M85049/1724N04A |
Виробник: Glenair
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 24 CLMP SZ 04
Circular MIL Spec Backshells EMI/RFI BKSHLL NI SH SZ 24 CLMP SZ 04
товар відсутній
M85049/2914N04A |
Виробник: Glenair
Circular MIL Spec Backshells NON ENV STRN RLF BS SH SZ 14 CLMP SZ 04
Circular MIL Spec Backshells NON ENV STRN RLF BS SH SZ 14 CLMP SZ 04
товар відсутній
M85049/2924N04 |
Виробник: Amphenol Pcd
Circular MIL Spec Backshells BACKSHELL NON ENV ST NICKEL SZ 24
Circular MIL Spec Backshells BACKSHELL NON ENV ST NICKEL SZ 24
товар відсутній
M85049/3624N04 |
Виробник: Glenair
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI
товар відсутній
M85049/3624N04A |
Виробник: Glenair
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI
товар відсутній
M85049/3624N04B |
Виробник: Glenair
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ24 CLMP SZ04 NI
товар відсутній