Результат пошуку "60n60" : > 180
Вид перегляду :
.jpg "IXGH60N60C2")
.jpg "IXGX60N60C2D1")
| Фото | Назва | Виробник | Інформація |
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FGH60N60SFDTU | onsemi |
 Description: IGBT FIELD STOP 600V 120A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
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FGH60N60SFDTU-F085 | ON Semiconductor |
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
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FGH60N60SFTU | ON Semiconductor |
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube |
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FGH60N60SMD-F085 | ON Semiconductor |
Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
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FGH60N60UFDTU | ON Semiconductor |
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube |
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FGH60N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/130ns Switching Energy: 1.81mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 188 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W |
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| FGH60N60UFDTU | ON Semiconductor |
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube |
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FGH60N60UFDTU-F085 | ON Semiconductor |
Trans IGBT Chip N-CH 600V 120A 298000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
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GRB260N601BBNN | CW Industries |
Description: SWITCH ROCKER SPST-NO 20A 125V Packaging: Bulk Current Rating (Amps): 20A (AC), 21A (DC) Mounting Type: Panel Mount, Snap-In Circuit: SPST-NO Switch Function: Off-Mom Operating Temperature: -20°C ~ 85°C Termination Style: Quick Connect - 0.250" (6.3mm) Actuator Type: Concave (Curved) Approval Agency: cULus, ENEC Ingress Protection: IP56 - Dust Protected, Water Resistant Panel Cutout Dimensions: Rectangular - 36.60mm x 21.20mm Color - Actuator/Cap: Black Actuator Marking: No Marking Part Status: Active Voltage Rating - AC: 125 V Voltage Rating - DC: 14 V |
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GRB260N601BBNN | CW Industries |
Rocker Switches (ON)-OFF Rocker IP56 |
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IKFW60N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 44A Power dissipation: 104W Case: PG-TO247-3-AI Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.21µC Kind of package: tube Turn-on time: 62ns Turn-off time: 189ns Features of semiconductor devices: integrated anti-parallel diode |
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IKFW60N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 44A Power dissipation: 104W Case: PG-TO247-3-AI Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.21µC Kind of package: tube Turn-on time: 62ns Turn-off time: 189ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IKFW60N60DH3EXKSA1 | Infineon Technologies |
Description: IGBT 600V 50A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: PG-TO247-3-AI IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/170ns Switching Energy: 1.57mJ (on), 720µJ (off) Test Condition: 400V, 50A, 7Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 53 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 141 W |
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| IKFW60N60EH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 164W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 290nC Kind of package: tube Turn-on time: 64ns Turn-off time: 253ns Features of semiconductor devices: integrated anti-parallel diode |
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| IKFW60N60EH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 164W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 290nC Kind of package: tube Turn-on time: 64ns Turn-off time: 253ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IKFW60N60EH3XKSA1 | Infineon Technologies |
High speed switching series third generation IGBT |
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IKW60N60H3FKSA1 | Infineon Technologies |
IGBT Transistors IGBT PRODUCTS TrenchStop |
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IXFH60N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 890W Case: TO247-3 On-state resistance: 55mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
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IXFH60N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 890W Case: TO247-3 On-state resistance: 55mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXFH60N60X | IXYS |
Description: MOSFET N-CH 600V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IXFH60N60X | IXYS |
MOSFET DiscMSFT NCh UltrJnctn XClass TO-247AD |
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IXFH60N60X2A | IXYS |
MOSFET DiscMSFTAuto-Ultra Junc X2Class TO-247AD |
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| IXFH60N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns |
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| IXFH60N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns кількість в упаковці: 1 шт |
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| IXFH60N60X3 | Littelfuse |
N-Channel Enhancement Mode Power MOSFET |
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| IXFL60N60 | IXYS |
Description: MOSFET N-CH 600V 60A ISOPLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 30A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: ISOPLUS264™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IXFN60N60 | IXYS |
 Description: MOSFET N-CH 600V 60A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IXFN60N60 | Littelfuse |
Trans MOSFET N-CH Si 600V 60A 4-Pin SOT-227B |
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IXFQ60N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 890W Case: TO3P On-state resistance: 55mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
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IXFQ60N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 890W Case: TO3P On-state resistance: 55mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXFQ60N60X | IXYS |
Description: MOSFET N-CH 600V 60A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IXFQ60N60X | IXYS |
MOSFET DiscMSFT NCh UltrJnctn XClass TO-3P (3) |
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| IXFT60N60X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns |
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| IXFT60N60X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns кількість в упаковці: 1 шт |
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| IXFT60N60X3HV | Littelfuse |
N-Channel Enhancement Mode Power MOSFET |
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IXGH60N60 | IXYS |
Description: IGBT 600V 75A 300W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 50ns/300ns Switching Energy: 8mJ (off) Test Condition: 480V, 60A, 2.7Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W |
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IXGH60N60B2 | IXYS |
Description: IGBT 600V 75A 500W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
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IXGH60N60C2 | IXYS |
Description: IGBT 600V 75A 480W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 480µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 146 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 480 W |
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IXGH60N60C3 | Littelfuse |
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD |
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IXGH60N60C3D1 | IXYS |
Description: IGBT 600V 75A 380W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/70ns Switching Energy: 800µJ (on), 450µJ (off) Test Condition: 480V, 40A, 3Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 380 W |
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IXGH60N60C3D1 | Littelfuse |
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247 |
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IXGK60N60 | IXYS |
Description: IGBT 600V 75A 300W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 50ns/300ns Switching Energy: 8mJ (off) Test Condition: 480V, 60A, 2.7Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W |
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IXGK60N60B2D1 | IXYS |
Description: IGBT 600V 75A 500W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
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IXGK60N60C2D1 | IXYS |
Description: IGBT 600V 75A 480W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 400µJ (on), 480µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 146 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 480 W |
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IXGN60N60 | IXYS |
Description: IGBT MOD 600V 100A 250W SOT227B Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 |
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IXGN60N60C2 | IXYS |
Description: IGBT MOD 600V 75A 480W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 480 W Current - Collector Cutoff (Max): 650 µA Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 |
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IXGN60N60C2D1 | IXYS |
Description: IGBT MOD 600V 75A 480W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 480 W Current - Collector Cutoff (Max): 650 µA Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 |
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IXGR60N60B2 | IXYS |
Description: IGBT 600V 75A 250W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 250 W |
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IXGR60N60B2D1 | IXYS |
Description: IGBT 600V 75A 250W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 250 W |
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IXGR60N60C2 | IXYS |
Description: IGBT 600V 75A 250W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 490µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 140 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 250 W |
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IXGR60N60C2D1 | IXYS |
Description: IGBT 600V 75A 250W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 490µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 140 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 250 W |
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IXGR60N60C3C1 | Littelfuse |
Trans IGBT Chip N-CH 600V 75A 170000mW 3-Pin(3+Tab) ISOPLUS 247 |
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IXGR60N60C3D1 | Littelfuse |
Trans IGBT Chip N-CH 600V 75A 170000mW 3-Pin(3+Tab) ISOPLUS 247 |
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IXGT60N60 | IXYS |
Description: IGBT PT 600V 75A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 50ns/300ns Switching Energy: 8mJ (off) Test Condition: 480V, 60A, 2.7Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W |
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IXGT60N60B2 | IXYS |
Description: IGBT PT 600V 75A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
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IXGT60N60C2 | IXYS |
Description: IGBT PT 600V 75A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 480µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 146 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 480 W |
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IXGT60N60C3D1 | Littelfuse |
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(2+Tab) TO-268 |
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IXGT60N60C3D1 | IXYS |
IGBT Transistors 60 Amps 600V |
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IXGX60N60B2D1 | IXYS |
Description: IGBT 600V 75A 500W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
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IXGX60N60C2D1 | IXYS |
Description: IGBT 600V 75A 480W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 400µJ (on), 480µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 146 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 480 W |
товар відсутній |
| FGH60N60SFDTU |
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Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
товар відсутній
| FGH60N60SFDTU-F085 |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| FGH60N60SFTU |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| FGH60N60SMD-F085 |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| FGH60N60UFDTU |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| FGH60N60UFDTU |
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Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
товар відсутній
| FGH60N60UFDTU |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| FGH60N60UFDTU-F085 |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 298000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| GRB260N601BBNN |
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Виробник: CW Industries
Description: SWITCH ROCKER SPST-NO 20A 125V
Packaging: Bulk
Current Rating (Amps): 20A (AC), 21A (DC)
Mounting Type: Panel Mount, Snap-In
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -20°C ~ 85°C
Termination Style: Quick Connect - 0.250" (6.3mm)
Actuator Type: Concave (Curved)
Approval Agency: cULus, ENEC
Ingress Protection: IP56 - Dust Protected, Water Resistant
Panel Cutout Dimensions: Rectangular - 36.60mm x 21.20mm
Color - Actuator/Cap: Black
Actuator Marking: No Marking
Part Status: Active
Voltage Rating - AC: 125 V
Voltage Rating - DC: 14 V
Description: SWITCH ROCKER SPST-NO 20A 125V
Packaging: Bulk
Current Rating (Amps): 20A (AC), 21A (DC)
Mounting Type: Panel Mount, Snap-In
Circuit: SPST-NO
Switch Function: Off-Mom
Operating Temperature: -20°C ~ 85°C
Termination Style: Quick Connect - 0.250" (6.3mm)
Actuator Type: Concave (Curved)
Approval Agency: cULus, ENEC
Ingress Protection: IP56 - Dust Protected, Water Resistant
Panel Cutout Dimensions: Rectangular - 36.60mm x 21.20mm
Color - Actuator/Cap: Black
Actuator Marking: No Marking
Part Status: Active
Voltage Rating - AC: 125 V
Voltage Rating - DC: 14 V
товар відсутній
| IKFW60N60DH3EXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 104W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 189ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 104W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 189ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKFW60N60DH3EXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 104W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 189ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 104W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 189ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| IKFW60N60DH3EXKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
Description: IGBT 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
товар відсутній
| IKFW60N60EH3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 164W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 253ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 164W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 253ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKFW60N60EH3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 164W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 253ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 164W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 253ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| IKFW60N60EH3XKSA1 |
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Виробник: Infineon Technologies
High speed switching series third generation IGBT
High speed switching series third generation IGBT
товар відсутній
| IKW60N60H3FKSA1 |
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Виробник: Infineon Technologies
IGBT Transistors IGBT PRODUCTS TrenchStop
IGBT Transistors IGBT PRODUCTS TrenchStop
товар відсутній
| IXFH60N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
товар відсутній
| IXFH60N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFH60N60X |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| IXFH60N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
товар відсутній
| IXFH60N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
товар відсутній
| IXFL60N60 |
Виробник: IXYS
Description: MOSFET N-CH 600V 60A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 30A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 30A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| IXFN60N60 | |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 60A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| IXFQ60N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
товар відсутній
| IXFQ60N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFQ60N60X |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| IXFT60N60X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
товар відсутній
| IXFT60N60X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
товар відсутній
| IXGH60N60 |
Виробник: IXYS
Description: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Description: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
| IXGH60N60B2 |
Виробник: IXYS
Description: IGBT 600V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT 600V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
| IXGH60N60C2 |
|
Виробник: IXYS
Description: IGBT 600V 75A 480W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
Description: IGBT 600V 75A 480W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
| IXGH60N60C3 |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
| IXGH60N60C3D1 |
|
Виробник: IXYS
Description: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 380 W
Description: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 380 W
товар відсутній
| IXGH60N60C3D1 |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247
товар відсутній
| IXGK60N60 |
Виробник: IXYS
Description: IGBT 600V 75A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Description: IGBT 600V 75A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
| IXGK60N60B2D1 |
Виробник: IXYS
Description: IGBT 600V 75A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT 600V 75A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
| IXGK60N60C2D1 |
|
Виробник: IXYS
Description: IGBT 600V 75A 480W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 400µJ (on), 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
Description: IGBT 600V 75A 480W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 400µJ (on), 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
| IXGN60N60 |
Виробник: IXYS
Description: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Description: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
| IXGN60N60C2 |
Виробник: IXYS
Description: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Description: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
| IXGN60N60C2D1 |
Виробник: IXYS
Description: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Description: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
| IXGR60N60B2 |
Виробник: IXYS
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
товар відсутній
| IXGR60N60B2D1 | |
Виробник: IXYS
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
товар відсутній
| IXGR60N60C2 |
Виробник: IXYS
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 490µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 490µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
товар відсутній
| IXGR60N60C2D1 |
Виробник: IXYS
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 490µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
Description: IGBT 600V 75A 250W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 490µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
товар відсутній
| IXGR60N60C3C1 |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 600V 75A 170000mW 3-Pin(3+Tab) ISOPLUS 247
Trans IGBT Chip N-CH 600V 75A 170000mW 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
| IXGR60N60C3D1 |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 600V 75A 170000mW 3-Pin(3+Tab) ISOPLUS 247
Trans IGBT Chip N-CH 600V 75A 170000mW 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
| IXGT60N60 |
Виробник: IXYS
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
| IXGT60N60B2 |
Виробник: IXYS
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
| IXGT60N60C2 |
|
Виробник: IXYS
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
| IXGT60N60C3D1 |
|
Виробник: Littelfuse
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(2+Tab) TO-268
Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(2+Tab) TO-268
товар відсутній
| IXGX60N60B2D1 |
Виробник: IXYS
Description: IGBT 600V 75A 500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT 600V 75A 500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
| IXGX60N60C2D1 |
|
Виробник: IXYS
Description: IGBT 600V 75A 480W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 400µJ (on), 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
Description: IGBT 600V 75A 480W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 400µJ (on), 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній