Продукція > SEMIKRON DANFOSS > Всі товари виробника SEMIKRON DANFOSS (630) > Сторінка 1 з 11
| Фото | Назва | Виробник | Інформація |
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1.5KE20A | SEMIKRON DANFOSS |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17.1V Max. forward impulse current: 54.2A Semiconductor structure: unidirectional Case: CB429 Mounting: THT Leakage current: 1mA |
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1N5388B | SEMIKRON DANFOSS |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 200V; DO201 Type of diode: Zener Power dissipation: 5W Zener voltage: 200V Case: DO201 Mounting: THT |
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3EZ36 | SEMIKRON DANFOSS |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 36V; DO15; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: THT Tolerance: ±5% Case: DO15 Semiconductor structure: single diode |
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| BOARD 2 // 3S SKYPER 42 R L5059201 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC Supply voltage: 14.4...15.6V DC Output current: 30A Voltage class: 1.7kV Application: for medium and high power application Type of semiconductor module: gate driver adapter Mounting: PCB Case: SKYPER® |
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| BOARD 2S SKYPER 32 PRO R L5062501 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC Mounting: PCB Case: SKYPER® Supply voltage: 14.4...15.6V DC Output current: 15A Voltage class: 1.7kV Application: for medium and high power application Type of semiconductor module: gate driver adapter |
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DBI 6-04 P 07641430 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 9A Max. forward impulse current: 150A Electrical mounting: THT Version: flat Max. forward voltage: 2.65V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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P1000M | SEMIKRON DANFOSS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm Type of diode: rectifying Mounting: THT Load current: 10A Max. off-state voltage: 1kV Body dimensions: Ø8x7.5mm Forward voltage at If: 0.9V |
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P6KE16A | SEMIKRON DANFOSS |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 5µA |
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P6KE18A | SEMIKRON DANFOSS |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 24A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1mA |
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P6SMB30CA | SEMIKRON DANFOSS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 30V Max. forward impulse current: 14.7A Semiconductor structure: bidirectional Case: DO214AA Mounting: SMD Leakage current: 1µA |
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SB560 | SEMIKRON DANFOSS |
Category: THT Schottky diodesDescription: Diode: rectifying; THT; 60V; 5A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 60V Load current: 5A Case: DO201 Forward voltage at If: 0.67V |
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| SEMIX101GD12E4S 27890195 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: SEMIX®13 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; thermistor Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 300A Application: for UPS; Inverter; photovoltaics Mechanical mounting: screw |
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| SEMIX126DGL22P 27896300 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; three-phase diode bridge Max. off-state voltage: 2.2kV Case: SEMiX® 6p Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Mechanical mounting: screw |
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| SEMIX151GAL12VS 27890103 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SEMIX1S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
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| SEMIX151GB12VS 27890101 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SEMIX1S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
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SEMIX151GD12E4S 27890200 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Electrical mounting: Press-Fit; screw Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; thermistor Case: SEMIX®13 Mechanical mounting: screw Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 450A |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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| SEMIX151GD12VS 27890201 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SEMIX®13 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
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| SEMIX201GD066HDS 27891220 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SEMIX®13 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw |
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SEMIX202GB12VS 27890111 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 200A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw |
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| SEMIX205GD12E4V2 27923320 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; thermistor Case: SEMiX® 5 Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Max. off-state voltage: 1.2kV |
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| SEMIX223GB12M7P 27895102 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 225A Case: SEMiX® 3p Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
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SEMIX245DH16 21920620 | SEMIKRON DANFOSS |
Category: Three phase controlled bridge rectif.Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 336A Max. forward impulse current: 1.8kA Electrical mounting: Press-Fit; screw Leads: M6 screws Case: SEMiX® 5 Version: module Mechanical mounting: screw Max. forward voltage: 1.28V Gate current: 100mA Gate voltage: 1.65V Features of semiconductor devices: with thermistor (NTC) |
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| SEMIX302GAL12E4S 27890220 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
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| SEMIX302GAL17E4S 27892120 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: boost chopper; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
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| SEMIX302GAR12E4S 27890222 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: buck chopper; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
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| SEMIX302GB066HDS 27891120 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 0.6kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 600A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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SEMIX302GB12E4S 27890120 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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| SEMIX302GB12VS 27890121 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
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| SEMIX302GB176HDS 27890470 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 200A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 400A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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| SEMIX302GB17E4S 27892110 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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SEMIX302KD16S 27890800 | SEMIKRON DANFOSS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V Max. off-state voltage: 1.6kV Load current: 300A Max. forward impulse current: 7.5kA Electrical mounting: screw Case: SEMIX2S Mechanical mounting: screw Max. forward voltage: 1.6V Semiconductor structure: double series Type of semiconductor module: diode |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| SEMIX302KH16S 27890822 | SEMIKRON DANFOSS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw Max. off-state voltage: 1.6kV Load current: 300A Max. forward impulse current: 9.3kA Electrical mounting: screw Case: SEMIX2S Mechanical mounting: screw Max. forward voltage: 1.7V Gate current: 200mA Semiconductor structure: double series Type of semiconductor module: diode-thyristor |
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| SEMIX302KT16S 27890820 | SEMIKRON DANFOSS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V Max. off-state voltage: 1.6kV Load current: 300A Max. forward impulse current: 9.3kA Electrical mounting: screw Case: SEMIX2S Mechanical mounting: screw Max. forward voltage: 1.7V Gate current: 200mA Semiconductor structure: double series Type of semiconductor module: thyristor |
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В кошику од. на суму грн. | |||||||
| SEMIX303GB12E4I50P 27897007 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: current shunt; IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| SEMIX303GB12E4P 27895007 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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В кошику од. на суму грн. | |||||||
| SEMIX303GB12E4S 27890130 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3s Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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В кошику од. на суму грн. | |||||||
| SEMIX303GB12M7P 27895107 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 600A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| SEMIX303GB12VS 27890131 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMiX® 3s Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| SEMIX303GB17E4P 27895407 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| SEMIX303GB17E4S 27892075 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3s Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| SEMIX303GD12E4C 27890210 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMIX®33c Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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В кошику од. на суму грн. | |||||||
| SEMIX305MLI07E4 21919430 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 300A; screw Max. off-state voltage: 650V Electrical mounting: Press-Fit; screw Case: SEMiX® 5 Mechanical mounting: screw Topology: thermistor; three-level inverter; single-phase Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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В кошику од. на суму грн. | |||||||
| SEMIX305MLI12E4V2 27922900 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 300A; screw Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 5 Mechanical mounting: screw Topology: thermistor; three-level inverter; single-phase Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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В кошику од. на суму грн. | |||||||
| SEMIX305TMLI12E4B 21919480 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; 3-level inverter TNPC Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 5 Mechanical mounting: screw Topology: 3-level inverter TNPC; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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SEMIX341D16S 27890830 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.7kV; If: 348A; Ifsm: 2.5kA Max. off-state voltage: 1.7kV Load current: 348A Case: SEMIX®13 Max. forward voltage: 1.75V Max. forward impulse current: 2.5kA Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of bridge rectifier: three-phase Leads: M6 screws Version: module |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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| SEMIX355MLI12M7 27922120 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 5 Mechanical mounting: screw Topology: thermistor; three-level inverter; single-phase Gate-emitter voltage: ±20V Collector current: 350A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 700A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
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В кошику од. на суму грн. | |||||||
| SEMIX365DH16 21920700 | SEMIKRON DANFOSS |
Category: Three phase controlled bridge rectif.Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 484A; module Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 484A Max. forward impulse current: 2.75kA Electrical mounting: Press-Fit; screw Leads: M6 screws Case: SEMiX® 5 Version: module Mechanical mounting: screw Max. forward voltage: 1.28V Gate current: 100mA Gate voltage: 1.65V Features of semiconductor devices: with thermistor (NTC) |
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В кошику од. на суму грн. | |||||||
| SEMIX443KD16P 27897520 | SEMIKRON DANFOSS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 580A; SEMiX® 3p; screw Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Case: SEMiX® 3p Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.36V Load current: 580A Max. forward impulse current: 8.2kA Features of semiconductor devices: with thermistor (NTC) |
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В кошику од. на суму грн. | |||||||
| SEMIX443KD22P 27897530 | SEMIKRON DANFOSS |
Category: Diode modulesDescription: Module: diode; double series; 2.2kV; If: 580A; SEMiX® 3p; screw Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 580A Case: SEMiX® 3p Max. forward voltage: 1.36V Max. forward impulse current: 8.2kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: with thermistor (NTC) |
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В кошику од. на суму грн. | |||||||
| SEMIX453GB12VS 27890141 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 450A Case: SEMiX® 3s Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.35kA Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||
| SEMIX526D22P 27894030 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 384A; Ifsm: 5.3kA Max. off-state voltage: 2.2kV Case: SEMiX® 6p Electrical mounting: Press-Fit Mechanical mounting: screw Max. forward voltage: 1.1V Load current: 384A Max. forward impulse current: 5.3kA Version: module Type of bridge rectifier: three-phase Features of semiconductor devices: with thermistor (NTC) |
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В кошику од. на суму грн. | |||||||
| SEMIX586D16P 27894020 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 392A; Ifsm: 4.2kA Max. off-state voltage: 1.6kV Case: SEMiX® 6p Electrical mounting: Press-Fit Mechanical mounting: screw Max. forward voltage: 1.2V Load current: 392A Max. forward impulse current: 4.2kA Version: module Type of bridge rectifier: three-phase Features of semiconductor devices: with thermistor (NTC) |
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В кошику од. на суму грн. | |||||||
| SEMIX603GB12E4IP 27897000 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV Electrical mounting: Press-Fit; screw Topology: current shunt; IGBT half-bridge; thermistor Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Mechanical mounting: screw Case: SEMiX® 3p Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 600A Max. off-state voltage: 1.2kV Pulsed collector current: 1.8kA |
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В кошику од. на суму грн. | |||||||
| SEMIX603GB12E4SICP 27895300 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 600A Case: SEMiX® 3p Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||
| SEMIX603KD16P 27897500 | SEMIKRON DANFOSS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 732A; SEMiX® 3p; Ifsm: 9kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Case: SEMiX® 3p Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.38V Load current: 732A Max. forward impulse current: 9kA Features of semiconductor devices: with thermistor (NTC) |
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В кошику од. на суму грн. | |||||||
| SEMIX604GB12VS 27890151 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 600A Case: SEMiX® 4s Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||
| SEMIX636D16P 27894010 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 482A; Ifsm: 5.5kA Max. off-state voltage: 1.6kV Case: SEMiX® 6p Electrical mounting: Press-Fit Mechanical mounting: screw Max. forward voltage: 1.2V Load current: 482A Max. forward impulse current: 5.5kA Version: module Type of bridge rectifier: three-phase Features of semiconductor devices: with thermistor (NTC) |
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В кошику од. на суму грн. | |||||||
| SEMIX653GAR176HDS 27890530 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; thermistor Max. off-state voltage: 1.7kV Collector current: 450A Case: SEMiX® 3s Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||
| SEMIX653GB176HDS 27890450 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Case: SEMiX® 3s Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Collector current: 450A Pulsed collector current: 900A Application: for UPS; Inverter; photovoltaics Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
SEMIX71GD12E4S 27890190 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Topology: IGBT three-phase bridge; thermistor Mechanical mounting: screw Case: SEMIX®13 Type of semiconductor module: IGBT Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 225A Max. off-state voltage: 1.2kV |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
|
| 1.5KE20A |
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Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
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В кошику
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| 1N5388B | ![]() |
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Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: DO201
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: DO201
Mounting: THT
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| 3EZ36 |
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Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
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| BOARD 2 // 3S SKYPER 42 R L5059201 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Supply voltage: 14.4...15.6V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Mounting: PCB
Case: SKYPER®
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Supply voltage: 14.4...15.6V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Mounting: PCB
Case: SKYPER®
товару немає в наявності
В кошику
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| BOARD 2S SKYPER 32 PRO R L5062501 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Mounting: PCB
Case: SKYPER®
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Mounting: PCB
Case: SKYPER®
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
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В кошику
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| DBI 6-04 P 07641430 |
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Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 563.99 грн |
| 3+ | 462.43 грн |
| P1000M |
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Виробник: SEMIKRON DANFOSS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 1kV
Body dimensions: Ø8x7.5mm
Forward voltage at If: 0.9V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 1kV
Body dimensions: Ø8x7.5mm
Forward voltage at If: 0.9V
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| P6KE16A |
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Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
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| P6KE18A |
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Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
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| P6SMB30CA | ![]() |
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Виробник: SEMIKRON DANFOSS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
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| SB560 |
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Виробник: SEMIKRON DANFOSS
Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
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| SEMIX101GD12E4S 27890195 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
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| SEMIX126DGL22P 27896300 |
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
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В кошику
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| SEMIX151GAL12VS 27890103 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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В кошику
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| SEMIX151GB12VS 27890101 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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В кошику
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| SEMIX151GD12E4S 27890200 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®13
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®13
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18953.18 грн |
| 2+ | 15484.43 грн |
| 4+ | 13973.76 грн |
| SEMIX151GD12VS 27890201 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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| SEMIX201GD066HDS 27891220 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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| SEMIX202GB12VS 27890111 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
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| SEMIX205GD12E4V2 27923320 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 5
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 5
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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| SEMIX223GB12M7P 27895102 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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| SEMIX245DH16 21920620 |
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Виробник: SEMIKRON DANFOSS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX302GAL12E4S 27890220 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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| SEMIX302GAL17E4S 27892120 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: boost chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: boost chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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| SEMIX302GAR12E4S 27890222 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: buck chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: buck chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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| SEMIX302GB066HDS 27891120 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX302GB12E4S 27890120 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX302GB12VS 27890121 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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| SEMIX302GB176HDS 27890470 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 400A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 400A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX302GB17E4S 27892110 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX302KD16S 27890800 |
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Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 7.5kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.6V
Semiconductor structure: double series
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 7.5kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.6V
Semiconductor structure: double series
Type of semiconductor module: diode
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8033.18 грн |
| 3+ | 6713.28 грн |
| SEMIX302KH16S 27890822 |
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Виробник: SEMIKRON DANFOSS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
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| SEMIX302KT16S 27890820 |
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Виробник: SEMIKRON DANFOSS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: thyristor
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| SEMIX303GB12E4I50P 27897007 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: current shunt; IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: current shunt; IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX303GB12E4P 27895007 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX303GB12E4S 27890130 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX303GB12M7P 27895107 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX303GB12VS 27890131 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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| SEMIX303GB17E4P 27895407 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX303GB17E4S 27892075 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX303GD12E4C 27890210 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX®33c
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX®33c
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX305MLI07E4 21919430 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 300A; screw
Max. off-state voltage: 650V
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 300A; screw
Max. off-state voltage: 650V
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX305MLI12E4V2 27922900 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 300A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 300A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX305TMLI12E4B 21919480 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: 3-level inverter TNPC; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: 3-level inverter TNPC; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX341D16S 27890830 |
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Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; If: 348A; Ifsm: 2.5kA
Max. off-state voltage: 1.7kV
Load current: 348A
Case: SEMIX®13
Max. forward voltage: 1.75V
Max. forward impulse current: 2.5kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Leads: M6 screws
Version: module
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; If: 348A; Ifsm: 2.5kA
Max. off-state voltage: 1.7kV
Load current: 348A
Case: SEMIX®13
Max. forward voltage: 1.75V
Max. forward impulse current: 2.5kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Leads: M6 screws
Version: module
на замовлення 35 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6328.57 грн |
| 4+ | 5279.81 грн |
| SEMIX355MLI12M7 27922120 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 350A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 700A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 350A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 700A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| SEMIX365DH16 21920700 |
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Виробник: SEMIKRON DANFOSS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 484A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 484A
Max. forward impulse current: 2.75kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 484A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 484A
Max. forward impulse current: 2.75kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX443KD16P 27897520 |
Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.36V
Load current: 580A
Max. forward impulse current: 8.2kA
Features of semiconductor devices: with thermistor (NTC)
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.36V
Load current: 580A
Max. forward impulse current: 8.2kA
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX443KD22P 27897530 |
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Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 580A
Case: SEMiX® 3p
Max. forward voltage: 1.36V
Max. forward impulse current: 8.2kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: with thermistor (NTC)
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 580A
Case: SEMiX® 3p
Max. forward voltage: 1.36V
Max. forward impulse current: 8.2kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX453GB12VS 27890141 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Mechanical mounting: screw
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| SEMIX526D22P 27894030 |
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Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 384A; Ifsm: 5.3kA
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.1V
Load current: 384A
Max. forward impulse current: 5.3kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 384A; Ifsm: 5.3kA
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.1V
Load current: 384A
Max. forward impulse current: 5.3kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX586D16P 27894020 |
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Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 392A; Ifsm: 4.2kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 392A
Max. forward impulse current: 4.2kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 392A; Ifsm: 4.2kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 392A
Max. forward impulse current: 4.2kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX603GB12E4IP 27897000 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Electrical mounting: Press-Fit; screw
Topology: current shunt; IGBT half-bridge; thermistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Max. off-state voltage: 1.2kV
Pulsed collector current: 1.8kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Electrical mounting: Press-Fit; screw
Topology: current shunt; IGBT half-bridge; thermistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Max. off-state voltage: 1.2kV
Pulsed collector current: 1.8kA
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| SEMIX603GB12E4SICP 27895300 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
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| SEMIX603KD16P 27897500 |
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Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 732A; SEMiX® 3p; Ifsm: 9kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.38V
Load current: 732A
Max. forward impulse current: 9kA
Features of semiconductor devices: with thermistor (NTC)
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 732A; SEMiX® 3p; Ifsm: 9kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.38V
Load current: 732A
Max. forward impulse current: 9kA
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX604GB12VS 27890151 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Mechanical mounting: screw
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| SEMIX636D16P 27894010 |
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Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 482A; Ifsm: 5.5kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 482A
Max. forward impulse current: 5.5kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 482A; Ifsm: 5.5kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 482A
Max. forward impulse current: 5.5kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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| SEMIX653GAR176HDS 27890530 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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| SEMIX653GB176HDS 27890450 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
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| SEMIX71GD12E4S 27890190 |
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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; thermistor
Mechanical mounting: screw
Case: SEMIX®13
Type of semiconductor module: IGBT
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; thermistor
Mechanical mounting: screw
Case: SEMIX®13
Type of semiconductor module: IGBT
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11144.14 грн |
| 3+ | 9139.59 грн |














