Продукція > SEMIKRON DANFOSS > Всі товари виробника SEMIKRON DANFOSS (785) > Сторінка 1 з 14
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1.5KE20A | SEMIKRON DANFOSS |
 Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17.1V Max. forward impulse current: 54.2A Semiconductor structure: unidirectional Case: CB429 Mounting: THT Leakage current: 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
1.5KE43CA | SEMIKRON DANFOSS |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 24A; bidirectional; CB429; 1.5kW Type of diode: TVS Max. off-state voltage: 34.8V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: CB429 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
1N5383B | SEMIKRON DANFOSS |
Category: THT Zener diodes Description: Diode: Zener; 5W; 150V; DO201 Type of diode: Zener Power dissipation: 5W Zener voltage: 150V Mounting: THT Case: DO201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
1N5388B | SEMIKRON DANFOSS |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 200V; DO201 Type of diode: Zener Power dissipation: 5W Zener voltage: 200V Case: DO201 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
3EZ12 | SEMIKRON DANFOSS |
Category: THT Zener diodes Description: Diode: Zener; 3W; 12V; DO15; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Mounting: THT Tolerance: ±5% Case: DO15 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
3EZ24 | SEMIKRON DANFOSS |
Category: THT Zener diodes Description: Diode: Zener; 3W; 24V; DO15; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Mounting: THT Tolerance: ±5% Case: DO15 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
3EZ36 | SEMIKRON DANFOSS |
Category: THT Zener diodes Description: Diode: Zener; 3W; 36V; DO15; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: THT Tolerance: ±5% Case: DO15 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
BI 25/12 07639430 | SEMIKRON DANFOSS |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Version: flat Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 25A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: BI 40x20x10 Kind of package: bulk Leads: wire Ø 0.8mm |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| BOARD 2 // 3S SKYPER 42 R L5059201 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC Supply voltage: 14.4...15.6V DC Output current: 30A Voltage class: 1.7kV Application: for medium and high power application Type of semiconductor module: gate driver adapter Mounting: PCB Case: SKYPER® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BOARD 2S SKYPER 32 PRO R L5062501 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC Mounting: PCB Case: SKYPER® Supply voltage: 14.4...15.6V DC Output current: 15A Voltage class: 1.7kV Application: for medium and high power application Type of semiconductor module: gate driver adapter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| BOARD 3S SKYPER 32 PRO R L5062601 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC Type of semiconductor module: gate driver adapter Case: SKYPER® Application: for medium and high power application Mounting: PCB Supply voltage: 14.4...15.6V DC Output current: 15A Voltage class: 1.7kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
DBI 25-04 P 07641480 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 27A; Ifsm: 310A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 27A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 1.95V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| DBI 25-08 07638960 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 25A; Ifsm: 310A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 2.2V Leads: wire Ø 0.8mm Case: DBI 40x20x10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
|
DBI 25-08 P 07641490 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 27A; Ifsm: 310A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 27A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 1.95V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
|
||||||||
|
|
DBI 25-10 P 07641760 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 27A; Ifsm: 310A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 1kV Load current: 27A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 1.95V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| DBI 25-12 07638970 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 25A; Ifsm: 310A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 25A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 2.2V Leads: wire Ø 0.8mm Case: DBI 40x20x10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
|
DBI 25-12 P 07641500 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 27A; Ifsm: 310A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 27A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 1.95V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| DBI 25-16 07638990 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 25A; Ifsm: 310A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 2.2V Leads: wire Ø 0.8mm Case: DBI 40x20x10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
|
DBI 25-16 P 07641210 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 310A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 27A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 1.95V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
|
||||||||
|
|
DBI 25-22 P 07641300 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 27A; Ifsm: 310A Type of bridge rectifier: three-phase Max. off-state voltage: 2.2kV Load current: 27A Max. forward impulse current: 310A Electrical mounting: THT Version: flat Max. forward voltage: 1.95V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
|
||||||||
|
|
DBI 6-04 P 07641430 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 9A Max. forward impulse current: 150A Electrical mounting: THT Version: flat Max. forward voltage: 2.65V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
|
||||||||
|
|
DBI 6-08 P 07641370 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 9A; Ifsm: 150A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 9A Max. forward impulse current: 150A Electrical mounting: THT Version: flat Max. forward voltage: 2.65V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
|
||||||||
|
|
DBI 6-20 P 07641450 | SEMIKRON DANFOSS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 9A; Ifsm: 150A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 2kV Load current: 9A Max. forward impulse current: 150A Electrical mounting: THT Version: flat Max. forward voltage: 2.65V Leads: wire Ø 0.8mm Case: DBI-P |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
|
||||||||
 |
P1000M | SEMIKRON DANFOSS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm Type of diode: rectifying Mounting: THT Load current: 10A Max. off-state voltage: 1kV Body dimensions: Ø8x7.5mm Forward voltage at If: 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
P6KE16A | SEMIKRON DANFOSS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
P6KE16CA | SEMIKRON DANFOSS |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 27A; bidirectional; DO15; 600W Type of diode: TVS Max. off-state voltage: 13.6V Max. forward impulse current: 27A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
P6KE39CA | SEMIKRON DANFOSS |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 39V; 11.2A; bidirectional; DO15; 600W Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
P6SMB30CA | SEMIKRON DANFOSS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 30V Max. forward impulse current: 14.7A Semiconductor structure: bidirectional Case: DO214AA Mounting: SMD Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
SB560 | SEMIKRON DANFOSS |
Category: THT Schottky diodes Description: Diode: rectifying; THT; 60V; 5A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 60V Load current: 5A Case: DO201 Forward voltage at If: 0.67V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SEMIX101GD12E4S 27890195 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: SEMIX®13 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; thermistor Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 300A Application: for UPS; Inverter; photovoltaics Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX126DGL22P 27896300 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; three-phase diode bridge Max. off-state voltage: 2.2kV Case: SEMiX® 6p Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX151GAL12VS 27890103 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SEMIX1S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX151GB12VS 27890101 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SEMIX1S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 +1 |
SEMIX151GD12E4S 27890200 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Electrical mounting: Press-Fit; screw Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; thermistor Case: SEMIX®13 Mechanical mounting: screw Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 450A |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| SEMIX151GD12VS 27890201 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SEMIX®13 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX201GD066HDS 27891220 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; thermistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SEMIX®13 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
SEMIX202GB12VS 27890111 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 200A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SEMIX205GD12E4V2 27923320 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; thermistor Case: SEMiX® 5 Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX205MLI07E4 21919420 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 200A Case: SEMiX® 5 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX205TMLI12E4B 21919470 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Topology: 3-level inverter TNPC; thermistor Max. off-state voltage: 1.2kV Application: for UPS; Inverter; photovoltaics Type of semiconductor module: IGBT Electrical mounting: Press-Fit; screw Case: SEMiX® 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX223GB12M7P 27895102 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 225A Case: SEMiX® 3p Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
SEMIX245DH16 21920620 | SEMIKRON DANFOSS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module Case: SEMiX® 5 Version: module Gate current: 100mA Max. forward voltage: 1.28V Gate voltage: 1.65V Load current: 336A Max. off-state voltage: 1.6kV Max. forward impulse current: 1.8kA Type of bridge rectifier: half-controlled Leads: M6 screws Electrical mounting: Press-Fit; screw Mechanical mounting: screw Features of semiconductor devices: with thermistor (NTC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SEMIX302GAL12E4S 27890220 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX302GAL17E4S 27892120 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: boost chopper; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX302GAR12E4S 27890222 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: buck chopper; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX302GB066HDS 27891120 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 0.6kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 600A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
SEMIX302GB12E4S 27890120 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SEMIX302GB12VS 27890121 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMIX2S Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX302GB176HDS 27890470 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 200A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 400A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX302GB17E4S 27892110 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMIX2S Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
SEMIX302KD16S 27890800 | SEMIKRON DANFOSS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V Max. off-state voltage: 1.6kV Load current: 300A Max. forward impulse current: 7.5kA Electrical mounting: screw Case: SEMIX2S Mechanical mounting: screw Max. forward voltage: 1.6V Semiconductor structure: double series Type of semiconductor module: diode |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| SEMIX302KH16S 27890822 | SEMIKRON DANFOSS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw Max. off-state voltage: 1.6kV Load current: 300A Max. forward impulse current: 9.3kA Electrical mounting: screw Case: SEMIX2S Mechanical mounting: screw Max. forward voltage: 1.7V Gate current: 200mA Semiconductor structure: double series Type of semiconductor module: diode-thyristor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX302KT16S 27890820 | SEMIKRON DANFOSS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V Max. off-state voltage: 1.6kV Load current: 300A Max. forward impulse current: 9.3kA Electrical mounting: screw Case: SEMIX2S Mechanical mounting: screw Max. forward voltage: 1.7V Gate current: 200mA Semiconductor structure: double series Type of semiconductor module: thyristor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX303GB12E4I50P 27897007 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: current shunt; IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX303GB12E4P 27895007 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX303GB12E4S 27890130 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3s Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX303GB12M7P 27895107 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 600A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX303GB12VS 27890131 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMiX® 3s Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX303GB17E4P 27895407 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SEMIX303GB17E4S 27892075 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Case: SEMiX® 3s Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 900A Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. |
| 1.5KE20A |
|
Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE43CA |
|
Виробник: SEMIKRON DANFOSS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 34.8V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 34.8V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
товару немає в наявності
В кошику
од. на суму грн.
| 1N5383B |
|
Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Mounting: THT
Case: DO201
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Mounting: THT
Case: DO201
товару немає в наявності
В кошику
од. на суму грн.
| 1N5388B | |
|
Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: DO201
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: DO201
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ12 |
|
Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ24 |
|
Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ36 |
|
Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| BI 25/12 07639430 |
|
Виробник: SEMIKRON DANFOSS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: BI 40x20x10
Kind of package: bulk
Leads: wire Ø 0.8mm
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: BI 40x20x10
Kind of package: bulk
Leads: wire Ø 0.8mm
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1302.60 грн |
| BOARD 2 // 3S SKYPER 42 R L5059201 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Supply voltage: 14.4...15.6V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Mounting: PCB
Case: SKYPER®
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Supply voltage: 14.4...15.6V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Mounting: PCB
Case: SKYPER®
товару немає в наявності
В кошику
од. на суму грн.
| BOARD 2S SKYPER 32 PRO R L5062501 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Mounting: PCB
Case: SKYPER®
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Mounting: PCB
Case: SKYPER®
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
товару немає в наявності
В кошику
од. на суму грн.
| BOARD 3S SKYPER 32 PRO R L5062601 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Type of semiconductor module: gate driver adapter
Case: SKYPER®
Application: for medium and high power application
Mounting: PCB
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Type of semiconductor module: gate driver adapter
Case: SKYPER®
Application: for medium and high power application
Mounting: PCB
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
товару немає в наявності
В кошику
од. на суму грн.
| DBI 25-04 P 07641480 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 27A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 27A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 18 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 887.03 грн |
| 3+ | 729.92 грн |
| 10+ | 703.97 грн |
| DBI 25-08 07638960 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 25A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.2V
Leads: wire Ø 0.8mm
Case: DBI 40x20x10
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 25A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.2V
Leads: wire Ø 0.8mm
Case: DBI 40x20x10
товару немає в наявності
В кошику
од. на суму грн.
| DBI 25-08 P 07641490 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 27A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 27A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 22 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 892.44 грн |
| 3+ | 738.29 грн |
| 10+ | 662.95 грн |
| DBI 25-10 P 07641760 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 27A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 27A; Ifsm: 310A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 22 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 605.78 грн |
| 3+ | 495.54 грн |
| 10+ | 445.32 грн |
| DBI 25-12 07638970 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 25A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.2V
Leads: wire Ø 0.8mm
Case: DBI 40x20x10
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 25A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.2V
Leads: wire Ø 0.8mm
Case: DBI 40x20x10
товару немає в наявності
В кошику
од. на суму грн.
| DBI 25-12 P 07641500 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 27A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 27A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1590.16 грн |
| 3+ | 1325.91 грн |
| DBI 25-16 07638990 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 25A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.2V
Leads: wire Ø 0.8mm
Case: DBI 40x20x10
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 25A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.2V
Leads: wire Ø 0.8mm
Case: DBI 40x20x10
товару немає в наявності
В кошику
од. на суму грн.
| DBI 25-16 P 07641210 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 21 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1809.22 грн |
| 3+ | 1506.72 грн |
| 10+ | 1325.91 грн |
| DBI 25-22 P 07641300 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 27A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 27A; Ifsm: 310A
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 27A
Max. forward impulse current: 310A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.95V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 14 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1963.37 грн |
| 3+ | 1612.19 грн |
| 10+ | 1446.45 грн |
| DBI 6-04 P 07641430 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 562.51 грн |
| 3+ | 461.22 грн |
| DBI 6-08 P 07641370 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 24 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1127.72 грн |
| 3+ | 911.56 грн |
| 10+ | 828.69 грн |
| 24+ | 775.96 грн |
| DBI 6-20 P 07641450 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 15 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 919.48 грн |
| 3+ | 753.36 грн |
| 10+ | 683.04 грн |
| P1000M |
|
Виробник: SEMIKRON DANFOSS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 1kV
Body dimensions: Ø8x7.5mm
Forward voltage at If: 0.9V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 1kV
Body dimensions: Ø8x7.5mm
Forward voltage at If: 0.9V
товару немає в наявності
В кошику
од. на суму грн.
| P6KE16A |
|
Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
| P6KE16CA |
|
Виробник: SEMIKRON DANFOSS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 13.6V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 13.6V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
товару немає в наявності
В кошику
од. на суму грн.
| P6KE39CA |
|
Виробник: SEMIKRON DANFOSS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.2A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.2A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB30CA | |
|
Виробник: SEMIKRON DANFOSS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| SB560 |
|
Виробник: SEMIKRON DANFOSS
Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX101GD12E4S 27890195 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX126DGL22P 27896300 |
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX151GAL12VS 27890103 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX151GB12VS 27890101 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX151GD12E4S 27890200 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®13
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®13
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18903.48 грн |
| 2+ | 15443.83 грн |
| 4+ | 13937.11 грн |
| SEMIX151GD12VS 27890201 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX201GD066HDS 27891220 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX202GB12VS 27890111 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX205GD12E4V2 27923320 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 5
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 5
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX205MLI07E4 21919420 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 200A
Case: SEMiX® 5
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 200A
Case: SEMiX® 5
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX205TMLI12E4B 21919470 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Topology: 3-level inverter TNPC; thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Topology: 3-level inverter TNPC; thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX223GB12M7P 27895102 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX245DH16 21920620 |
|
Виробник: SEMIKRON DANFOSS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Case: SEMiX® 5
Version: module
Gate current: 100mA
Max. forward voltage: 1.28V
Gate voltage: 1.65V
Load current: 336A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1.8kA
Type of bridge rectifier: half-controlled
Leads: M6 screws
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Features of semiconductor devices: with thermistor (NTC)
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Case: SEMiX® 5
Version: module
Gate current: 100mA
Max. forward voltage: 1.28V
Gate voltage: 1.65V
Load current: 336A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1.8kA
Type of bridge rectifier: half-controlled
Leads: M6 screws
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Features of semiconductor devices: with thermistor (NTC)
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GAL12E4S 27890220 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GAL17E4S 27892120 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: boost chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: boost chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GAR12E4S 27890222 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: buck chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: buck chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GB066HDS 27891120 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GB12E4S 27890120 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GB12VS 27890121 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GB176HDS 27890470 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 400A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 400A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302GB17E4S 27892110 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302KD16S 27890800 |
|
Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 7.5kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.6V
Semiconductor structure: double series
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 7.5kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.6V
Semiconductor structure: double series
Type of semiconductor module: diode
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8012.12 грн |
| 3+ | 6695.67 грн |
| SEMIX302KH16S 27890822 |
|
Виробник: SEMIKRON DANFOSS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX302KT16S 27890820 |
|
Виробник: SEMIKRON DANFOSS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: thyristor
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX303GB12E4I50P 27897007 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: current shunt; IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: current shunt; IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX303GB12E4P 27895007 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX303GB12E4S 27890130 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX303GB12M7P 27895107 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX303GB12VS 27890131 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX303GB17E4P 27895407 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| SEMIX303GB17E4S 27892075 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику
од. на суму грн.