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1.5KE20A 1.5KE20A SEMIKRON DANFOSS littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
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1N5388B 1N5388B SEMIKRON DANFOSS 1n5345b.pdf 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: DO201
Mounting: THT
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3EZ36 3EZ36 SEMIKRON DANFOSS 000175.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
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BOARD 2 // 3S SKYPER 42 R L5059201 SEMIKRON DANFOSS B23SSKYPER42R.pdf Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Supply voltage: 14.4...15.6V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Mounting: PCB
Case: SKYPER®
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BOARD 2S SKYPER 32 PRO R L5062501 SEMIKRON DANFOSS B2SSKYPER32PROR.pdf Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Mounting: PCB
Case: SKYPER®
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
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DBI 6-04 P 07641430 DBI 6-04 P 07641430 SEMIKRON DANFOSS DBI6-xxP_SER.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+563.99 грн
3+462.43 грн
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P1000M P1000M SEMIKRON DANFOSS p1000a.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 1kV
Body dimensions: Ø8x7.5mm
Forward voltage at If: 0.9V
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P6KE16A P6KE16A SEMIKRON DANFOSS littelfuse_tvs_diode_p6ke_datasheet.pdf?assetguid=620a3cb5-3282-4670-8b03-66f21bc75523 p6ke68.pdf P6KE SERIES_P2203.pdf p6ke%20series(600w,5.8v_513v).pdf P6KE%20SERIES%20N0157%20REV.C.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
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P6KE18A P6KE18A SEMIKRON DANFOSS littelfuse_tvs_diode_p6ke_datasheet.pdf?assetguid=620a3cb5-3282-4670-8b03-66f21bc75523 P6KE SERIES_P2203.pdf FAIRS45056-1.pdf?t.download=true&u=5oefqw p6ke%20series(600w,5.8v_513v).pdf p6ke68.pdf cd00000720.pdf p6ke68.pdf P6KE%20SERIES%20N0157%20REV.C.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
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P6SMB30CA P6SMB30CA SEMIKRON DANFOSS tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
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SB560 SB560 SEMIKRON DANFOSS SB560%20N0087%20REV.A.pdf SB520-SB560.pdf sb520.pdf sb520.pdf sb580-d.pdf Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
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SEMIX101GD12E4S 27890195 SEMIKRON DANFOSS SEMIX101GD12E4S.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
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SEMIX126DGL22P 27896300 SEMIKRON DANFOSS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
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SEMIX151GAL12VS 27890103 SEMIKRON DANFOSS SEMIX151GAL12VS.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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SEMIX151GB12VS 27890101 SEMIKRON DANFOSS SEMIX151GB12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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SEMIX151GD12E4S 27890200
+1
SEMIX151GD12E4S 27890200 SEMIKRON DANFOSS SEMIX151GD12E4S.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®13
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+18953.18 грн
2+15484.43 грн
4+13973.76 грн
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SEMIX151GD12VS 27890201 SEMIKRON DANFOSS SEMIX151GD12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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SEMIX201GD066HDS 27891220 SEMIKRON DANFOSS SEMIX201GD066HDS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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SEMIX202GB12VS 27890111 SEMIX202GB12VS 27890111 SEMIKRON DANFOSS SEMIX202GB12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
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SEMIX205GD12E4V2 27923320 SEMIKRON DANFOSS SEMiX205GD12E4V2.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 5
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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SEMIX223GB12M7P 27895102 SEMIKRON DANFOSS SEMIX223GB12M7P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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SEMIX245DH16 21920620 SEMIX245DH16 21920620 SEMIKRON DANFOSS SEMIX245DH16.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
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SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS SEMIX302GAL12E4S.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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SEMIX302GAL17E4S 27892120 SEMIKRON DANFOSS SEMIX302GAL17E4S.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: boost chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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SEMIX302GAR12E4S 27890222 SEMIKRON DANFOSS SEMIX302GAR12E4S.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: buck chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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SEMIX302GB066HDS 27891120 SEMIKRON DANFOSS SEMIX302GB066HDS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX302GB12E4S 27890120 SEMIX302GB12E4S 27890120 SEMIKRON DANFOSS SEMIX302GB12E4S.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX302GB12VS 27890121 SEMIKRON DANFOSS SEMIX302GB12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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SEMIX302GB176HDS 27890470 SEMIKRON DANFOSS SEMIX302GB176HDS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 400A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS SEMIX302GB17E4S.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX302KD16S 27890800 SEMIX302KD16S 27890800 SEMIKRON DANFOSS SEMIX302KD16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 7.5kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.6V
Semiconductor structure: double series
Type of semiconductor module: diode
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+8033.18 грн
3+6713.28 грн
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SEMIX302KH16S 27890822 SEMIKRON DANFOSS SEMIX302KH16S.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
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SEMIX302KT16S 27890820 SEMIKRON DANFOSS SEMIX302KT16S.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: thyristor
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SEMIX303GB12E4I50P 27897007 SEMIKRON DANFOSS SEMIX303GB12E4I50P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: current shunt; IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX303GB12E4P 27895007 SEMIKRON DANFOSS SEMIX303GB12E4P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX303GB12E4S 27890130 SEMIKRON DANFOSS SEMiX303GB12E4s.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX303GB12M7P 27895107 SEMIKRON DANFOSS SEMIX303GB12M7P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX303GB12VS 27890131 SEMIKRON DANFOSS SEMIX303GB12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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SEMIX303GB17E4P 27895407 SEMIKRON DANFOSS SEMIX303GB17E4P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX303GB17E4S 27892075 SEMIKRON DANFOSS SEMIX303GB17E4S.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX303GD12E4C 27890210 SEMIKRON DANFOSS SEMIX303GD12E4C.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX®33c
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX305MLI07E4 21919430 SEMIKRON DANFOSS SEMIX305MLI07E4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 300A; screw
Max. off-state voltage: 650V
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX305MLI12E4V2 27922900 SEMIKRON DANFOSS SEMIX305MLI12E4V2.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 300A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX305TMLI12E4B 21919480 SEMIKRON DANFOSS SEMIX305TMLI12E4B.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: 3-level inverter TNPC; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX341D16S 27890830 SEMIX341D16S 27890830 SEMIKRON DANFOSS SEMIX341D16S.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; If: 348A; Ifsm: 2.5kA
Max. off-state voltage: 1.7kV
Load current: 348A
Case: SEMIX®13
Max. forward voltage: 1.75V
Max. forward impulse current: 2.5kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Leads: M6 screws
Version: module
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
1+6328.57 грн
4+5279.81 грн
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SEMIX355MLI12M7 27922120 SEMIKRON DANFOSS SEMIX355MLI12M7.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 350A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 700A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX365DH16 21920700 SEMIKRON DANFOSS SEMIX365DH16.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 484A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 484A
Max. forward impulse current: 2.75kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
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SEMIX443KD16P 27897520 SEMIKRON DANFOSS Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.36V
Load current: 580A
Max. forward impulse current: 8.2kA
Features of semiconductor devices: with thermistor (NTC)
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SEMIX443KD22P 27897530 SEMIKRON DANFOSS SEMiX443KD22p.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 580A
Case: SEMiX® 3p
Max. forward voltage: 1.36V
Max. forward impulse current: 8.2kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: with thermistor (NTC)
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SEMIX453GB12VS 27890141 SEMIKRON DANFOSS SEMIX453GB12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Mechanical mounting: screw
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SEMIX526D22P 27894030 SEMIKRON DANFOSS SEMiX526D22p.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 384A; Ifsm: 5.3kA
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.1V
Load current: 384A
Max. forward impulse current: 5.3kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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SEMIX586D16P 27894020 SEMIKRON DANFOSS SEMiX586D16p.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 392A; Ifsm: 4.2kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 392A
Max. forward impulse current: 4.2kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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SEMIX603GB12E4IP 27897000 SEMIKRON DANFOSS SEMIX603GB12E4IP.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Electrical mounting: Press-Fit; screw
Topology: current shunt; IGBT half-bridge; thermistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Max. off-state voltage: 1.2kV
Pulsed collector current: 1.8kA
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SEMIX603GB12E4SICP 27895300 SEMIKRON DANFOSS SEMiX603GB12E4SiCp.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
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SEMIX603KD16P 27897500 SEMIKRON DANFOSS SEMiX603KD16p.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 732A; SEMiX® 3p; Ifsm: 9kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.38V
Load current: 732A
Max. forward impulse current: 9kA
Features of semiconductor devices: with thermistor (NTC)
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SEMIX604GB12VS 27890151 SEMIKRON DANFOSS SEMIX604GB12VS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Mechanical mounting: screw
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SEMIX636D16P 27894010 SEMIKRON DANFOSS SEMiX636D16p.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 482A; Ifsm: 5.5kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 482A
Max. forward impulse current: 5.5kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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SEMIX653GAR176HDS 27890530 SEMIKRON DANFOSS SEMIX653GAR176HDS.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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SEMIX653GB176HDS 27890450 SEMIKRON DANFOSS SEMIX653GB176HDS.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
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SEMIX71GD12E4S 27890190 SEMIX71GD12E4S 27890190 SEMIKRON DANFOSS SEMIX71GD12E4S.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; thermistor
Mechanical mounting: screw
Case: SEMIX®13
Type of semiconductor module: IGBT
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+11144.14 грн
3+9139.59 грн
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1.5KE20A littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7
1.5KE20A
Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 54.2A; unidirectional; CB429
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
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1N5388B description 1n5345b.pdf 1n5333b-d.pdf
1N5388B
Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; DO201
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: DO201
Mounting: THT
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3EZ36 000175.pdf
3EZ36
Виробник: SEMIKRON DANFOSS
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: DO15
Semiconductor structure: single diode
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BOARD 2 // 3S SKYPER 42 R L5059201 B23SSKYPER42R.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Supply voltage: 14.4...15.6V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
Mounting: PCB
Case: SKYPER®
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BOARD 2S SKYPER 32 PRO R L5062501 B2SSKYPER32PROR.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: gate driver adapter; SKYPER®; PCB; 1.7kV; 14.4÷15.6VDC
Mounting: PCB
Case: SKYPER®
Supply voltage: 14.4...15.6V DC
Output current: 15A
Voltage class: 1.7kV
Application: for medium and high power application
Type of semiconductor module: gate driver adapter
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DBI 6-04 P 07641430 DBI6-xxP_SER.pdf
DBI 6-04 P 07641430
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 9A; Ifsm: 150A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 9A
Max. forward impulse current: 150A
Electrical mounting: THT
Version: flat
Max. forward voltage: 2.65V
Leads: wire Ø 0.8mm
Case: DBI-P
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+563.99 грн
3+462.43 грн
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P1000M p1000a.pdf
P1000M
Виробник: SEMIKRON DANFOSS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 10A; Ø8x7.5mm
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 1kV
Body dimensions: Ø8x7.5mm
Forward voltage at If: 0.9V
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P6KE16A littelfuse_tvs_diode_p6ke_datasheet.pdf?assetguid=620a3cb5-3282-4670-8b03-66f21bc75523 p6ke68.pdf P6KE SERIES_P2203.pdf p6ke%20series(600w,5.8v_513v).pdf P6KE%20SERIES%20N0157%20REV.C.pdf
P6KE16A
Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
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P6KE18A littelfuse_tvs_diode_p6ke_datasheet.pdf?assetguid=620a3cb5-3282-4670-8b03-66f21bc75523 P6KE SERIES_P2203.pdf FAIRS45056-1.pdf?t.download=true&u=5oefqw p6ke%20series(600w,5.8v_513v).pdf p6ke68.pdf cd00000720.pdf p6ke68.pdf P6KE%20SERIES%20N0157%20REV.C.pdf
P6KE18A
Виробник: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
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P6SMB30CA description tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435
P6SMB30CA
Виробник: SEMIKRON DANFOSS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
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SB560 SB560%20N0087%20REV.A.pdf SB520-SB560.pdf sb520.pdf sb520.pdf sb580-d.pdf
SB560
Виробник: SEMIKRON DANFOSS
Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
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SEMIX101GD12E4S 27890195 SEMIX101GD12E4S.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
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SEMIX126DGL22P 27896300
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 2.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
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SEMIX151GAL12VS 27890103 SEMIX151GAL12VS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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SEMIX151GB12VS 27890101 SEMIX151GB12VS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX1S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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SEMIX151GD12E4S 27890200 SEMIX151GD12E4S.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMIX®13
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+18953.18 грн
2+15484.43 грн
4+13973.76 грн
В кошику  од. на суму  грн.
SEMIX151GD12VS 27890201 SEMIX151GD12VS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX201GD066HDS 27891220 SEMIX201GD066HDS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SEMIX®13
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX202GB12VS 27890111 SEMIX202GB12VS.pdf
SEMIX202GB12VS 27890111
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX205GD12E4V2 27923320 SEMiX205GD12E4V2.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 5
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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В кошику  од. на суму  грн.
SEMIX223GB12M7P 27895102 SEMIX223GB12M7P.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX245DH16 21920620 SEMIX245DH16.pdf
SEMIX245DH16 21920620
Виробник: SEMIKRON DANFOSS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
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SEMIX302GAL12E4S 27890220 SEMIX302GAL12E4S.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX302GAL17E4S 27892120 SEMIX302GAL17E4S.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: boost chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX302GAR12E4S 27890222 SEMIX302GAR12E4S.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: buck chopper; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX302GB066HDS 27891120 SEMIX302GB066HDS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX302GB12E4S 27890120 SEMIX302GB12E4S.pdf
SEMIX302GB12E4S 27890120
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX302GB12VS 27890121 SEMIX302GB12VS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX302GB176HDS 27890470 SEMIX302GB176HDS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 400A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
SEMIX302GB17E4S 27892110 SEMIX302GB17E4S.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMIX2S
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX302KD16S 27890800 SEMIX302KD16S.pdf
SEMIX302KD16S 27890800
Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 300A; SEMIX2S; Ufmax: 1.6V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 7.5kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.6V
Semiconductor structure: double series
Type of semiconductor module: diode
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+8033.18 грн
3+6713.28 грн
В кошику  од. на суму  грн.
SEMIX302KH16S 27890822 SEMIX302KH16S.pdf
Виробник: SEMIKRON DANFOSS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V; screw
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
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В кошику  од. на суму  грн.
SEMIX302KT16S 27890820 SEMIX302KT16S.pdf
Виробник: SEMIKRON DANFOSS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 300A; SEMIX2S; Ufmax: 1.7V
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 9.3kA
Electrical mounting: screw
Case: SEMIX2S
Mechanical mounting: screw
Max. forward voltage: 1.7V
Gate current: 200mA
Semiconductor structure: double series
Type of semiconductor module: thyristor
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В кошику  од. на суму  грн.
SEMIX303GB12E4I50P 27897007 SEMIX303GB12E4I50P.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: current shunt; IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX303GB12E4P 27895007 SEMIX303GB12E4P.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX303GB12E4S 27890130 SEMiX303GB12E4s.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX303GB12M7P 27895107 SEMIX303GB12M7P.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX303GB12VS 27890131 SEMIX303GB12VS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX303GB17E4P 27895407 SEMIX303GB17E4P.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX303GB17E4S 27892075 SEMIX303GB17E4S.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3s
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX303GD12E4C 27890210 SEMIX303GD12E4C.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX®33c
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX305MLI07E4 21919430 SEMIX305MLI07E4.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 300A; screw
Max. off-state voltage: 650V
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX305MLI12E4V2 27922900 SEMIX305MLI12E4V2.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 300A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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В кошику  од. на суму  грн.
SEMIX305TMLI12E4B 21919480 SEMIX305TMLI12E4B.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: 3-level inverter TNPC; thermistor
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 900A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX341D16S 27890830 SEMIX341D16S.pdf
SEMIX341D16S 27890830
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.7kV; If: 348A; Ifsm: 2.5kA
Max. off-state voltage: 1.7kV
Load current: 348A
Case: SEMIX®13
Max. forward voltage: 1.75V
Max. forward impulse current: 2.5kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Leads: M6 screws
Version: module
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+6328.57 грн
4+5279.81 грн
В кошику  од. на суму  грн.
SEMIX355MLI12M7 27922120 SEMIX355MLI12M7.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMiX® 5
Mechanical mounting: screw
Topology: thermistor; three-level inverter; single-phase
Gate-emitter voltage: ±20V
Collector current: 350A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 700A
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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SEMIX365DH16 21920700 SEMIX365DH16.pdf
Виробник: SEMIKRON DANFOSS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 484A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 484A
Max. forward impulse current: 2.75kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
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В кошику  од. на суму  грн.
SEMIX443KD16P 27897520
Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.36V
Load current: 580A
Max. forward impulse current: 8.2kA
Features of semiconductor devices: with thermistor (NTC)
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SEMIX443KD22P 27897530 SEMiX443KD22p.pdf
Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 580A; SEMiX® 3p; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 580A
Case: SEMiX® 3p
Max. forward voltage: 1.36V
Max. forward impulse current: 8.2kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: with thermistor (NTC)
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В кошику  од. на суму  грн.
SEMIX453GB12VS 27890141 SEMIX453GB12VS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Mechanical mounting: screw
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В кошику  од. на суму  грн.
SEMIX526D22P 27894030 SEMiX526D22p.pdf
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 384A; Ifsm: 5.3kA
Max. off-state voltage: 2.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.1V
Load current: 384A
Max. forward impulse current: 5.3kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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SEMIX586D16P 27894020 SEMiX586D16p.pdf
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 392A; Ifsm: 4.2kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 392A
Max. forward impulse current: 4.2kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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SEMIX603GB12E4IP 27897000 SEMIX603GB12E4IP.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Electrical mounting: Press-Fit; screw
Topology: current shunt; IGBT half-bridge; thermistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Max. off-state voltage: 1.2kV
Pulsed collector current: 1.8kA
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SEMIX603GB12E4SICP 27895300 SEMiX603GB12E4SiCp.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
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SEMIX603KD16P 27897500 SEMiX603KD16p.pdf
Виробник: SEMIKRON DANFOSS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 732A; SEMiX® 3p; Ifsm: 9kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SEMiX® 3p
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.38V
Load current: 732A
Max. forward impulse current: 9kA
Features of semiconductor devices: with thermistor (NTC)
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SEMIX604GB12VS 27890151 SEMIX604GB12VS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Mechanical mounting: screw
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SEMIX636D16P 27894010 SEMiX636D16p.pdf
Виробник: SEMIKRON DANFOSS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 482A; Ifsm: 5.5kA
Max. off-state voltage: 1.6kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Max. forward voltage: 1.2V
Load current: 482A
Max. forward impulse current: 5.5kA
Version: module
Type of bridge rectifier: three-phase
Features of semiconductor devices: with thermistor (NTC)
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SEMIX653GAR176HDS 27890530 SEMIX653GAR176HDS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
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SEMIX653GB176HDS 27890450 SEMIX653GB176HDS.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
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SEMIX71GD12E4S 27890190 SEMIX71GD12E4S.pdf
SEMIX71GD12E4S 27890190
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; thermistor
Mechanical mounting: screw
Case: SEMIX®13
Type of semiconductor module: IGBT
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+11144.14 грн
3+9139.59 грн
В кошику  од. на суму  грн.
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