Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132064) > Сторінка 2185 з 2202
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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STB12NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 10.5A; 190W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 190W Case: D2PAK On-state resistance: 0.75Ω Mounting: SMD Gate charge: 87nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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EMIF01-10005W5 | STMicroelectronics |
Category: Filters - integrated circuitsDescription: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2 Type of filter: digital Kind of integrated circuit: line terminator Kind of filter: EMI; lowpass Case: SOT323-5L Mounting: SMD Filter order: 2 Number of channels: 2 Application: USB port ESD protection |
на замовлення 2479 шт: термін постачання 14-30 дні (днів) |
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SM4T28CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Application: automotive industry Kind of package: reel; tape |
на замовлення 4662 шт: термін постачання 14-30 дні (днів) |
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STP5NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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FERD40H100SG-TR | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 40A; D2PAK; Ufmax: 0.325V; Ifsm: 440A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 40A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.325V Max. forward impulse current: 0.44kA Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STW14NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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STWA70N65DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A Case: TO247 Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±25V On-state resistance: 40mΩ Pulsed drain current: 260A Power dissipation: 450W Gate charge: 125nC Polarisation: unipolar Technology: MDmesh™ DM6 Drain current: 43A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STP310N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 315W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: DeepGATE™; STripFET™ VII |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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| STW10N105K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3.78A Pulsed drain current: 24A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STPS20H100CR | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 0.88V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.88V Max. load current: 30A Max. forward impulse current: 250A Leakage current: 6mA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP65N150M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ M9 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMA6J24A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 28.1V; 80A; unidirectional; SMA; reel,tape; SMA6J Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 80A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.2µA Kind of package: reel; tape Manufacturer series: SMA6J |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STPSC20H065CW | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2.5V Max. load current: 36A Max. forward impulse current: 470A Kind of package: tube |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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STPSC20H065CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 2.5V Max. load current: 36A Max. forward impulse current: 470A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STPSC20H065CWY | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247; Ir: 425uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 2.5V Max. load current: 22A Max. forward impulse current: 470A Leakage current: 425µA Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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L6926013TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 2...5.5V DC Case: TSSOP8 Mounting: SMD Frequency: 800kHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Output voltage: 0.6...38V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| L6924D013TR | STMicroelectronics |
Category: Battery and battery cells controllersDescription: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Case: VFQFPN16 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.5...12V DC Output current: 1A Integrated circuit features: Li-Ion/Polymer Output voltage: 4.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| L6924UTR | STMicroelectronics |
Category: Battery and battery cells controllersDescription: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Case: VFQFPN16 Mounting: SMD Operating temperature: -40...125°C Interface: USB Supply voltage: 2.5...12V DC Output current: 1A Integrated circuit features: Li-Ion/Polymer Output voltage: 4.1V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
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L6926Q1TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 2...5.5V DC Case: TSSOP8 Mounting: SMD Frequency: 800kHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Output voltage: 0.6...38V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| L6928Q1TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uin: 2÷5.5VDC; VFQFPN8; SMD; 1.4MHz; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 2...5.5V DC Case: VFQFPN8 Mounting: SMD Frequency: 1.4MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BD678A | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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STD2NK100Z | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.16A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
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STB9NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.5A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| M95640-DFDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| M95640-DFMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: MLP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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M95640-DFMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| M95640-DRDW3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; SPI; 8kx8bit; TSSOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: SPI Memory organisation: 8kx8bit Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 20ns |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
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M95640-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCTH60N120G2-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 52mΩ Power dissipation: 390W Gate charge: 94nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V Kind of package: reel; tape Case: H2PAK7 Mounting: SMD Pulsed drain current: 177A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA60N120G2-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 52mΩ Power dissipation: 389W Gate charge: 94nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V Kind of package: tube Case: HIP247-4 Mounting: THT Pulsed drain current: 177A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESDCAN01-2BLY | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; ESD; SOT23; Ch: 2 Version: ESD Semiconductor structure: bidirectional Leakage current: 0.1µA Case: SOT23 Capacitance: 30pF Type of diode: TVS array Number of channels: 2 Mounting: SMD Breakdown voltage: 25...30V Max. forward impulse current: 5.5A Application: automotive industry Max. off-state voltage: 24V |
на замовлення 1773 шт: термін постачання 14-30 дні (днів) |
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STP46N60M6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 126A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 53.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ20A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Max. off-state voltage: 20V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.4kW Leakage current: 1µA Breakdown voltage: 22.2V Manufacturer series: SMAJ Max. forward impulse current: 54A |
на замовлення 8453 шт: термін постачання 14-30 дні (днів) |
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STM32F378RCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 1.8VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; PoR; watchdog Memory: 32kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 3 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM32F378VCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 83 Case: LQFP100 Supply voltage: 1.8V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; PoR; watchdog Memory: 32kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 3 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VIPER26HD | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output current: 3A Output voltage: 800V Mounting: SMD Operating temperature: -40...150°C Frequency: 115kHz Kind of package: tube Input voltage: 11.5...23.5V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
| VIPER28HN | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||||||||
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VIPER28LD | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; SO16; 1.2A; 1.5W; 8.5÷23.5V; 60kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output current: 1.2A Mounting: SMD Operating temperature: -40...150°C Frequency: 60kHz Input voltage: 8.5...23.5V DC supply current: 2.5mA Power: 1.5W |
на замовлення 1500 шт: термін постачання 14-30 дні (днів) |
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VIPER38HD | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: driver; flyback; SO16; 800V; Uin: 8.5÷23.5V; 115kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output voltage: 800V Mounting: SMD Operating temperature: -40...150°C Input voltage: 8.5...23.5V Frequency: 115kHz |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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VIPER318LDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 800V; 60kHz; SO16; boost,buck,buck-boost,flyback Type of integrated circuit: PMIC Output voltage: 800V Frequency: 60kHz Case: SO16 Mounting: SMD Operating temperature: -40...150°C Topology: boost; buck; buck-boost; flyback Integrated circuit features: PWM |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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VIPER317HDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 15V; 132kHz; SO16; boost,buck,buck-boost,flyback Type of integrated circuit: PMIC Output voltage: 15V Frequency: 132kHz Case: SO16 Mounting: SMD Operating temperature: -40...150°C Topology: boost; buck; buck-boost; flyback Input voltage: 4.5...30V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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VIPER318XDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 800V; 30kHz; SO16; boost,buck,buck-boost,flyback Type of integrated circuit: PMIC Output voltage: 800V Frequency: 30kHz Case: SO16 Mounting: SMD Operating temperature: -40...150°C Topology: boost; buck; buck-boost; flyback Input voltage: 85...265V AC Supply voltage: 4.5...30V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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L9615D013TR | STMicroelectronics |
Category: CAN interfaces - integrated circuitsDescription: IC: CAN transceiver; 500kbps; 4.5÷5.5VDC; SO8; -40÷110°C Type of integrated circuit: CAN transceiver Data transfer rate: 500kbps Supply voltage: 4.5...5.5V DC Case: SO8 Interface: CAN bus Mounting: SMD Operating temperature: -40...110°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STGB50H65FB2 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 53A; 272W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 151nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ESDAVLC6-2BLY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; ESD Type of diode: TVS array Version: ESD Mounting: SMD |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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ESDALC12-1T2 | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 50W; 12V; 2A; unidirectional; SOD882T; reel,tape Case: SOD882T Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 2A Peak pulse power dissipation: 50W Version: ESD Max. off-state voltage: 10V Semiconductor structure: unidirectional Leakage current: 0.2µA Type of diode: TVS Breakdown voltage: 12V |
на замовлення 7958 шт: термін постачання 14-30 дні (днів) |
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ESDA25SC6Y | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 400W; 30V; 9A; unidirectional; SOT23-6; Ch: 1 Mounting: SMD Case: SOT23-6 Breakdown voltage: 30V Max. forward impulse current: 9A Peak pulse power dissipation: 0.4kW Version: ESD Max. off-state voltage: 24V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1mA Type of diode: TVS Number of channels: 1 |
на замовлення 2579 шт: термін постачання 14-30 дні (днів) |
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ESDA25W | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 30V; 9A; 400W; double,common anode; ESD; SOT323 Type of diode: TVS array Peak pulse power dissipation: 0.4kW Max. off-state voltage: 25V Breakdown voltage: 30V Max. forward impulse current: 9A Semiconductor structure: common anode; double Case: SOT323 Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Version: ESD Number of channels: 1 |
на замовлення 2072 шт: термін постачання 14-30 дні (днів) |
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ESDA17-5SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 17÷19V; 150W; common anode; ESD; SOT23-6; Ch: 5 Type of diode: TVS array Version: ESD Mounting: SMD Peak pulse power dissipation: 0.15kW Max. off-state voltage: 14V Kind of package: reel; tape Semiconductor structure: common anode Leakage current: 75nA Case: SOT23-6 Number of channels: 5 Breakdown voltage: 17...19V |
на замовлення 1162 шт: термін постачання 14-30 дні (днів) |
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| ESDALC6V1-5M6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 3A; 30W; common anode; ESD; MicroQFN; Ch: 5 Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 30W Semiconductor structure: common anode Version: ESD Mounting: SMD Case: MicroQFN Leakage current: 70nA Number of channels: 5 Kind of package: reel; tape Max. forward impulse current: 3A |
на замовлення 1887 шт: термін постачання 14-30 дні (днів) |
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ESDALC6V1P6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 30W; ESD; SOT666IP; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 30W Semiconductor structure: common anode; quadruple; unidirectional Version: ESD Mounting: SMD Case: SOT666IP Max. off-state voltage: 3V Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape |
на замовлення 2042 шт: термін постачання 14-30 дні (днів) |
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ESDALC6V1-5P6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 2.5A; 30W; unidirectional,common anode Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 30W Semiconductor structure: common anode; unidirectional Version: ESD Mounting: SMD Case: SOT666 Max. off-state voltage: 5V Leakage current: 70nA Number of channels: 5 Kind of package: reel; tape Max. forward impulse current: 2.5A |
на замовлення 2140 шт: термін постачання 14-30 дні (днів) |
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ESDA25SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; ESD Mounting: SMD Version: ESD Type of diode: TVS array |
на замовлення 1134 шт: термін постачання 14-30 дні (днів) |
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ESDA25-4BP6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 50W; bidirectional; ESD Type of diode: TVS array Version: ESD Mounting: SMD Peak pulse power dissipation: 50W Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 1µA |
на замовлення 1390 шт: термін постачання 14-30 дні (днів) |
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ESDA37W | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; ESD Type of diode: TVS array Version: ESD Mounting: SMD |
на замовлення 2636 шт: термін постачання 14-30 дні (днів) |
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STM32G483RET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of comparators: 7 Number of 12bit D/A converters: 7 Number of 16bit timers: 11 Number of 32bit timers: 2 Family: STM32G4 Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMCJ15A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 64A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STD11N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.6A Power dissipation: 85W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.48Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 17nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N1711 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 75V; 0.5A; 0.8W; TO39 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 75V Collector current: 0.5A Power dissipation: 0.8W Case: TO39 Mounting: THT Frequency: 70MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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M74HC4851YRM13TR | STMicroelectronics |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 8; IN: 8; SMD; SO16; HC; HC; -40÷125°C Type of integrated circuit: digital Number of channels: octal; 8 Case: SO16 Supply voltage: 2...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Kind of integrated circuit: multiplexer Delay time: 78ns Manufacturer series: HC Number of inputs: 8 Family: HC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| STB12NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.5A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 190W
Case: D2PAK
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 87nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.5A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 190W
Case: D2PAK
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 87nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| EMIF01-10005W5 |
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Виробник: STMicroelectronics
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT323-5L
Mounting: SMD
Filter order: 2
Number of channels: 2
Application: USB port ESD protection
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT323-5L
Mounting: SMD
Filter order: 2
Number of channels: 2
Application: USB port ESD protection
на замовлення 2479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.61 грн |
| 24+ | 18.28 грн |
| 26+ | 16.59 грн |
| 50+ | 15.32 грн |
| 100+ | 14.22 грн |
| 250+ | 13.04 грн |
| 500+ | 12.95 грн |
| SM4T28CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
на замовлення 4662 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.79 грн |
| 10+ | 42.49 грн |
| 12+ | 37.67 грн |
| 100+ | 25.06 грн |
| 250+ | 22.43 грн |
| 500+ | 21.25 грн |
| STP5NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 209.67 грн |
| 10+ | 133.75 грн |
| 25+ | 111.74 грн |
| 40+ | 102.43 грн |
| 50+ | 98.20 грн |
| 100+ | 88.04 грн |
| FERD40H100SG-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 40A; D2PAK; Ufmax: 0.325V; Ifsm: 440A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.325V
Max. forward impulse current: 0.44kA
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 40A; D2PAK; Ufmax: 0.325V; Ifsm: 440A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.325V
Max. forward impulse current: 0.44kA
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STW14NK50Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.17 грн |
| 10+ | 179.46 грн |
| 30+ | 162.53 грн |
| STWA70N65DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Case: TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Pulsed drain current: 260A
Power dissipation: 450W
Gate charge: 125nC
Polarisation: unipolar
Technology: MDmesh™ DM6
Drain current: 43A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Case: TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Pulsed drain current: 260A
Power dissipation: 450W
Gate charge: 125nC
Polarisation: unipolar
Technology: MDmesh™ DM6
Drain current: 43A
товару немає в наявності
В кошику
од. на суму грн.
| STP310N10F7 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 311.52 грн |
| 10+ | 276.81 грн |
| STW10N105K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STPS20H100CR |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.88V
Max. load current: 30A
Max. forward impulse current: 250A
Leakage current: 6mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.88V
Max. load current: 30A
Max. forward impulse current: 250A
Leakage current: 6mA
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| STP65N150M9 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ M9
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ M9
товару немає в наявності
В кошику
од. на суму грн.
| SMA6J24A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.1V; 80A; unidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 80A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.1V; 80A; unidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 80A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Manufacturer series: SMA6J
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| STPSC20H065CW |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.5V
Max. load current: 36A
Max. forward impulse current: 470A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.5V
Max. load current: 36A
Max. forward impulse current: 470A
Kind of package: tube
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 425.73 грн |
| 5+ | 370.77 грн |
| STPSC20H065CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 2.5V
Max. load current: 36A
Max. forward impulse current: 470A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 2.5V
Max. load current: 36A
Max. forward impulse current: 470A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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| STPSC20H065CWY |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247; Ir: 425uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 2.5V
Max. load current: 22A
Max. forward impulse current: 470A
Leakage current: 425µA
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247; Ir: 425uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 2.5V
Max. load current: 22A
Max. forward impulse current: 470A
Leakage current: 425µA
Kind of package: tube
Application: automotive industry
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| L6926013TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| L6924D013TR |
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Виробник: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
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| L6924UTR |
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Виробник: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Interface: USB
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Interface: USB
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| L6926Q1TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
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Мінімальне замовлення: 4000 шт
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| L6928Q1TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; VFQFPN8; SMD; 1.4MHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: VFQFPN8
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; VFQFPN8; SMD; 1.4MHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: VFQFPN8
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| BD678A |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 3 шт
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| STD2NK100Z |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 142.21 грн |
| 10+ | 89.22 грн |
| 75+ | 70.18 грн |
| 100+ | 68.14 грн |
| 250+ | 62.64 грн |
| STB9NK50ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| M95640-DFDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| M95640-DFMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: MLP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: MLP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| M95640-DFMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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| M95640-DRDW3TP/K |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; SPI; 8kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 20ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; SPI; 8kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 20ns
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| M95640-RMN6P |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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| SCTH60N120G2-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 390W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: reel; tape
Case: H2PAK7
Mounting: SMD
Pulsed drain current: 177A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 390W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: reel; tape
Case: H2PAK7
Mounting: SMD
Pulsed drain current: 177A
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| SCTWA60N120G2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 389W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: HIP247-4
Mounting: THT
Pulsed drain current: 177A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 389W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: HIP247-4
Mounting: THT
Pulsed drain current: 177A
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| ESDCAN01-2BLY |
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; ESD; SOT23; Ch: 2
Version: ESD
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: SOT23
Capacitance: 30pF
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Application: automotive industry
Max. off-state voltage: 24V
Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; ESD; SOT23; Ch: 2
Version: ESD
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: SOT23
Capacitance: 30pF
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Application: automotive industry
Max. off-state voltage: 24V
на замовлення 1773 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.85 грн |
| 49+ | 8.72 грн |
| 55+ | 7.83 грн |
| 100+ | 6.66 грн |
| 250+ | 6.38 грн |
| 500+ | 6.04 грн |
| 1000+ | 5.30 грн |
| STP46N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 126A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 126A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
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| SMAJ20A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Leakage current: 1µA
Breakdown voltage: 22.2V
Manufacturer series: SMAJ
Max. forward impulse current: 54A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Leakage current: 1µA
Breakdown voltage: 22.2V
Manufacturer series: SMAJ
Max. forward impulse current: 54A
на замовлення 8453 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 24+ | 17.95 грн |
| 27+ | 16.08 грн |
| 100+ | 11.26 грн |
| 250+ | 10.07 грн |
| 500+ | 9.40 грн |
| 1000+ | 8.80 грн |
| 2000+ | 8.21 грн |
| 5000+ | 7.70 грн |
| STM32F378RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
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| STM32F378VCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
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| VIPER26HD |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Kind of package: tube
Input voltage: 11.5...23.5V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Kind of package: tube
Input voltage: 11.5...23.5V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| VIPER28HN |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 50 шт
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| VIPER28LD |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 1.2A; 1.5W; 8.5÷23.5V; 60kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 1.2A
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 8.5...23.5V
DC supply current: 2.5mA
Power: 1.5W
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 1.2A; 1.5W; 8.5÷23.5V; 60kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 1.2A
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 8.5...23.5V
DC supply current: 2.5mA
Power: 1.5W
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 46.13 грн |
| VIPER38HD |
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 800V; Uin: 8.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 8.5...23.5V
Frequency: 115kHz
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 800V; Uin: 8.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 8.5...23.5V
Frequency: 115kHz
товару немає в наявності
Мінімальне замовлення: 50 шт
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од. на суму грн.
| VIPER318LDTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 800V; 60kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 800V
Frequency: 60kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Integrated circuit features: PWM
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 800V; 60kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 800V
Frequency: 60kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Integrated circuit features: PWM
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| VIPER317HDTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 15V; 132kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 15V
Frequency: 132kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Input voltage: 4.5...30V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 15V; 132kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 15V
Frequency: 132kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Input voltage: 4.5...30V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| VIPER318XDTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 800V; 30kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 800V
Frequency: 30kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Input voltage: 85...265V AC
Supply voltage: 4.5...30V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 800V; 30kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 800V
Frequency: 30kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Input voltage: 85...265V AC
Supply voltage: 4.5...30V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| L9615D013TR |
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Виробник: STMicroelectronics
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 500kbps; 4.5÷5.5VDC; SO8; -40÷110°C
Type of integrated circuit: CAN transceiver
Data transfer rate: 500kbps
Supply voltage: 4.5...5.5V DC
Case: SO8
Interface: CAN bus
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 500kbps; 4.5÷5.5VDC; SO8; -40÷110°C
Type of integrated circuit: CAN transceiver
Data transfer rate: 500kbps
Supply voltage: 4.5...5.5V DC
Case: SO8
Interface: CAN bus
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STGB50H65FB2 |
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Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ESDAVLC6-2BLY |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Version: ESD
Mounting: SMD
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 84.65 грн |
| ESDALC12-1T2 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 50W; 12V; 2A; unidirectional; SOD882T; reel,tape
Case: SOD882T
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 2A
Peak pulse power dissipation: 50W
Version: ESD
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Type of diode: TVS
Breakdown voltage: 12V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 50W; 12V; 2A; unidirectional; SOD882T; reel,tape
Case: SOD882T
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 2A
Peak pulse power dissipation: 50W
Version: ESD
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Type of diode: TVS
Breakdown voltage: 12V
на замовлення 7958 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 193+ | 2.37 грн |
| 200+ | 2.12 грн |
| 209+ | 2.03 грн |
| 224+ | 1.90 грн |
| 500+ | 1.84 грн |
| ESDA25SC6Y |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 400W; 30V; 9A; unidirectional; SOT23-6; Ch: 1
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 30V
Max. forward impulse current: 9A
Peak pulse power dissipation: 0.4kW
Version: ESD
Max. off-state voltage: 24V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1mA
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 400W; 30V; 9A; unidirectional; SOT23-6; Ch: 1
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 30V
Max. forward impulse current: 9A
Peak pulse power dissipation: 0.4kW
Version: ESD
Max. off-state voltage: 24V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1mA
Type of diode: TVS
Number of channels: 1
на замовлення 2579 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.73 грн |
| 21+ | 20.91 грн |
| 50+ | 16.25 грн |
| 100+ | 14.90 грн |
| 500+ | 12.36 грн |
| 1000+ | 11.17 грн |
| ESDA25W |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 30V; 9A; 400W; double,common anode; ESD; SOT323
Type of diode: TVS array
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25V
Breakdown voltage: 30V
Max. forward impulse current: 9A
Semiconductor structure: common anode; double
Case: SOT323
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Version: ESD
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS array; 30V; 9A; 400W; double,common anode; ESD; SOT323
Type of diode: TVS array
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25V
Breakdown voltage: 30V
Max. forward impulse current: 9A
Semiconductor structure: common anode; double
Case: SOT323
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Version: ESD
Number of channels: 1
на замовлення 2072 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.17 грн |
| 25+ | 17.10 грн |
| 100+ | 9.82 грн |
| 500+ | 7.28 грн |
| 1000+ | 6.52 грн |
| ESDA17-5SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 17÷19V; 150W; common anode; ESD; SOT23-6; Ch: 5
Type of diode: TVS array
Version: ESD
Mounting: SMD
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 14V
Kind of package: reel; tape
Semiconductor structure: common anode
Leakage current: 75nA
Case: SOT23-6
Number of channels: 5
Breakdown voltage: 17...19V
Category: Protection diodes - arrays
Description: Diode: TVS array; 17÷19V; 150W; common anode; ESD; SOT23-6; Ch: 5
Type of diode: TVS array
Version: ESD
Mounting: SMD
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 14V
Kind of package: reel; tape
Semiconductor structure: common anode
Leakage current: 75nA
Case: SOT23-6
Number of channels: 5
Breakdown voltage: 17...19V
на замовлення 1162 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.53 грн |
| 26+ | 16.68 грн |
| 100+ | 11.34 грн |
| 250+ | 9.57 грн |
| 500+ | 8.38 грн |
| 1000+ | 7.28 грн |
| ESDALC6V1-5M6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 30W; common anode; ESD; MicroQFN; Ch: 5
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode
Version: ESD
Mounting: SMD
Case: MicroQFN
Leakage current: 70nA
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 3A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 30W; common anode; ESD; MicroQFN; Ch: 5
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode
Version: ESD
Mounting: SMD
Case: MicroQFN
Leakage current: 70nA
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 3A
на замовлення 1887 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 30.08 грн |
| 25+ | 17.44 грн |
| 100+ | 12.61 грн |
| 250+ | 10.67 грн |
| 500+ | 9.48 грн |
| 1000+ | 8.38 грн |
| ESDALC6V1P6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; ESD; SOT666IP; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Version: ESD
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; ESD; SOT666IP; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Version: ESD
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
на замовлення 2042 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.53 грн |
| 25+ | 16.93 грн |
| 28+ | 15.66 грн |
| 100+ | 11.43 грн |
| 500+ | 9.57 грн |
| 1000+ | 8.80 грн |
| ESDALC6V1-5P6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 2.5A; 30W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; unidirectional
Version: ESD
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 70nA
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 2.5A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 2.5A; 30W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; unidirectional
Version: ESD
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 70nA
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 2.5A
на замовлення 2140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 36+ | 12.02 грн |
| 38+ | 11.17 грн |
| 100+ | 10.24 грн |
| 500+ | 9.82 грн |
| ESDA25SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Mounting: SMD
Version: ESD
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Mounting: SMD
Version: ESD
Type of diode: TVS array
на замовлення 1134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.32 грн |
| 41+ | 10.41 грн |
| 100+ | 7.96 грн |
| 250+ | 7.28 грн |
| 500+ | 6.94 грн |
| 1000+ | 6.43 грн |
| ESDA25-4BP6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 50W; bidirectional; ESD
Type of diode: TVS array
Version: ESD
Mounting: SMD
Peak pulse power dissipation: 50W
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 50W; bidirectional; ESD
Type of diode: TVS array
Version: ESD
Mounting: SMD
Peak pulse power dissipation: 50W
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 1µA
на замовлення 1390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 24+ | 17.78 грн |
| 26+ | 16.42 грн |
| 100+ | 12.27 грн |
| 500+ | 10.84 грн |
| 1000+ | 9.90 грн |
| ESDA37W |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Version: ESD
Mounting: SMD
на замовлення 2636 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.14 грн |
| 33+ | 12.87 грн |
| 42+ | 10.16 грн |
| 100+ | 5.25 грн |
| STM32G483RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Kind of core: 32-bit
товару немає в наявності
Мінімальне замовлення: 160 шт
В кошику
од. на суму грн.
| SMCJ15A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| STD11N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
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| 2N1711 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 75V; 0.5A; 0.8W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 0.5A
Power dissipation: 0.8W
Case: TO39
Mounting: THT
Frequency: 70MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 75V; 0.5A; 0.8W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 0.5A
Power dissipation: 0.8W
Case: TO39
Mounting: THT
Frequency: 70MHz
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| M74HC4851YRM13TR |
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Виробник: STMicroelectronics
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 8; IN: 8; SMD; SO16; HC; HC; -40÷125°C
Type of integrated circuit: digital
Number of channels: octal; 8
Case: SO16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of integrated circuit: multiplexer
Delay time: 78ns
Manufacturer series: HC
Number of inputs: 8
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 8; IN: 8; SMD; SO16; HC; HC; -40÷125°C
Type of integrated circuit: digital
Number of channels: octal; 8
Case: SO16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of integrated circuit: multiplexer
Delay time: 78ns
Manufacturer series: HC
Number of inputs: 8
Family: HC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.





































